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High-yield fabrication of bubble-free magic-angle twisted bilayer graphene devices with high twist-angle homogeneity
Authors:
J. Diez-Merida,
I. Das,
G. Di Battista,
A. Diez-Carlon,
M. Lee,
L. Zeng,
K. Watanabe,
T. Taniguchi,
E. Olsson,
D. K. Efetov
Abstract:
Magic-angle twisted bilayer graphene (MATBG) stands as one of the most versatile materials in condensed-matter physics due to its hosting of a wide variety of exotic phases while also offering convenient tunability. However, the fabrication of MATBG is still manual, and remains to be a challenging and inefficient process, with devices being highly dependent on specific fabrication methods, that of…
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Magic-angle twisted bilayer graphene (MATBG) stands as one of the most versatile materials in condensed-matter physics due to its hosting of a wide variety of exotic phases while also offering convenient tunability. However, the fabrication of MATBG is still manual, and remains to be a challenging and inefficient process, with devices being highly dependent on specific fabrication methods, that often result in inconsistency and variability. In this work, we present an optimized protocol for the fabrication of MATBG samples, for which we use deterministic graphene anchoring to stabilize the twist-angle, and a careful bubble removal techniques to ensure a high twist-angle homogeneity. We use low-temperature transport experiments to extract the average twist-angle between pairs of leads. We find that up to 38 percent of the so fabricated devices show micrometer square sized regions with a twist-angle in the range 1.1 plus/minus 0.1 degrees, and a twist-angle variation of only 0.02 degrees, where in some instances such regions were up to 36 micrometer square large. We are certain that the discussed protocols can be directly transferred to non-graphene materials, and will be useful for the growing field of moire materials.
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Submitted 18 May, 2024;
originally announced May 2024.
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Exploring the Premelting Transition through Molecular Simulations Powered by Neural Network Potentials
Authors:
Limin Zeng,
Ang Gao
Abstract:
The system has addressed the error of "Bad character(s) in field Abstract" for no reason. Please refer to manuscript for the full abstract.
The system has addressed the error of "Bad character(s) in field Abstract" for no reason. Please refer to manuscript for the full abstract.
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Submitted 18 April, 2024;
originally announced April 2024.
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Superconductivity of the New Medium-Entropy Alloy V4Ti2W with a Body-Centered Cubic Structure
Authors:
Kuan Li,
Weijie Lin,
Ruixin Guo,
Shu Guo,
Lingyong Zeng,
Longfu Li,
Peifeng Yu,
Kangwang Wang,
Chao Zhang,
Huixia Luo
Abstract:
Medium- and high-entropy alloy (MEA and HEA) superconductors have attracted considerable interest since their discovery. This paper reports the superconducting properties of ternary tungsten-containing MEA V4Ti2W for the first time. V4Ti2W is a type II superconductor with a body-centered cubic (BCC) structure. Experimental results of resistivity, magnetization, and heat capacity indicate that the…
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Medium- and high-entropy alloy (MEA and HEA) superconductors have attracted considerable interest since their discovery. This paper reports the superconducting properties of ternary tungsten-containing MEA V4Ti2W for the first time. V4Ti2W is a type II superconductor with a body-centered cubic (BCC) structure. Experimental results of resistivity, magnetization, and heat capacity indicate that the superconducting transition temperature of the MEA V4Ti2W is roughly 5.0 K. The critical magnetic fields at the upper and lower ends are 9.93(2) T and 40.7(3) mT, respectively. Interestingly, few BCC MEA superconductors with VEC greater than 4.8 have been found. The addition of tungsten leads to a VEC of 4.83 e/a for V4Ti2W, which is rarely higher than the 4.8 value. Adding tungsten element expands the variety of MEA alloys, which may improve the microstructure and mechanical properties of materials and even superconducting properties. This material could potentially offer a new platform for the investigation of innovative MEA and HEA superconductors.
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Submitted 8 March, 2024;
originally announced March 2024.
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Organic solvent boosts charge storage and charging dynamics of conductive MOF supercapacitors
Authors:
Ming Chen,
Taizheng Wu,
Liang Niu,
Ting Ye,
Wenlei Dai,
Liang Zeng,
Alexei A. Kornyshev,
Zhenxiang Wang,
Zhou Liu,
Guang Feng
Abstract:
Conductive metal-organic frameworks (c-MOFs) and ionic liquids (ILs) have emerged as auspicious combinations for high-performance supercapacitors. However, the nanoconfinement from c-MOFs and high viscosity of ILs slow down the charging process. This hindrance can, however, be resolved by adding solvent. Here, we performed constant-potential molecular simulations to scrutinize the solvent impact o…
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Conductive metal-organic frameworks (c-MOFs) and ionic liquids (ILs) have emerged as auspicious combinations for high-performance supercapacitors. However, the nanoconfinement from c-MOFs and high viscosity of ILs slow down the charging process. This hindrance can, however, be resolved by adding solvent. Here, we performed constant-potential molecular simulations to scrutinize the solvent impact on charge storage and charging dynamics of MOF-IL-based supercapacitors. We find conditions for >100% enhancement in capacity and ~6 times increase in charging speed. These improvements were confirmed by synthesizing near-ideal c-MOFs and develo** multiscale models linking molecular simulations to electrochemical measurements. Fundamentally, our findings elucidate that the solvent acts as an ionophobic agent to induce a substantial enhancement in charge storage, and as an ion traffic police to eliminate convoluted counterion and co-ion motion paths and create two distinct ion transport highways to accelerate charging dynamics. This work paves the way for the optimal design of MOF supercapacitors.
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Submitted 2 March, 2024;
originally announced March 2024.
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Characterization of process-related interfacial dielectric loss in aluminum-on-silicon by resonator microwave measurements, materials analysis, and imaging
Authors:
Lert Chayanun,
Janka Biznárová,
Lunjie Zeng,
Per Malmberg,
Andreas Nylander,
Amr Osman,
Marcus Rommel,
Pui Lam Tam,
Eva Olsson,
August Yurgens,
Jonas Bylander,
Anita Fadavi Roudsari
Abstract:
We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconduct…
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We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconducting qubits. By systematically varying several fabrication steps, we identify the relative importance of reducing loss at the substrate-metal and the substrate-air interfaces. We find that it is essential to clean the silicon substrate in hydrogen fluoride (HF) prior to aluminum deposition. A post-fabrication removal of the oxides on the surface of the silicon substrate and the aluminum film by immersion in HF further improves the $Q_i$. We observe a small, but noticeable, adverse effect on the loss by omitting either standard cleaning (SC1), pre-deposition heating of the substrate to 300$°$C, or in-situ post-deposition oxidation of the film's top surface. We find no improvement due to excessive pum** meant to reach a background pressure below $6{\times} 10^{-8}$ mbar. We correlate the measured loss with microscopic properties of the substrate-metal interface through characterization with X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectroscopy (ToF-SIMS), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM).
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Submitted 1 March, 2024;
originally announced March 2024.
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Moment-Tensor-Based Constant-Potential Modeling of Electrical Double Layers
Authors:
Zhenxiang Wang,
Ming Chen,
Jiedu Wu,
Xiangyu Ji,
Liang Zeng,
Jiaxing Peng,
Jiawei Yan,
Alexei A. Kornyshev,
Bingwei Mao,
Guang Feng
Abstract:
Constant-potential molecular dynamics (MD) simulations are indispensable for understanding the capacitance, structure, and dynamics of electrical double layers (EDLs) at the atomistic level. However, the classical constant-potential method, relying on the so-called 'floating charges' to keep electrode equipotential, overlooks quantum effects on the electrode and always underestimates EDL capacitan…
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Constant-potential molecular dynamics (MD) simulations are indispensable for understanding the capacitance, structure, and dynamics of electrical double layers (EDLs) at the atomistic level. However, the classical constant-potential method, relying on the so-called 'floating charges' to keep electrode equipotential, overlooks quantum effects on the electrode and always underestimates EDL capacitance for typical electrochemical systems featuring metal electrodes in aqueous electrolytes. Here, we propose a universal theoretical framework as moment-tensor-based constant potential method (mCPM) to capture electronic structure variations with electric moments. For EDLs at Au(111) electrodes, mCPM-based MD reveals bell-shaped capacitance curves in magnitude and shape both quantitatively consistent with experiments. It further unveils the potential-dependent local electric fields, agreeing with experimental observations of redshift vibration of interfacial water under negative polarization and predicting a blueshift under positive polarization, and identifies geometry dependence of two time scales during EDL formation.
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Submitted 30 January, 2024;
originally announced January 2024.
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Superconductivity in the high-entropy ceramics Ti0.2Zr0.2Nb0.2Mo0.2Ta0.2Cx with possible nontrivial band topology
Authors:
Lingyong Zeng,
Xunwu Hu,
Yazhou Zhou,
Mebrouka Boubeche,
Ruixin Guo,
Yang Liu,
Si-Chun Luo,
Shu Guo,
Kuan Li,
Peifeng Yu,
Chao Zhang,
Wei-Ming Guo,
Liling Sun,
Dao-Xin Yao,
Huixia Luo
Abstract:
Topological superconductors have drawn significant interest from the scientific community due to the accompanying Majorana fermions. Here, we report the discovery of electronic structure and superconductivity in high-entropy ceramics Ti0.2Zr0.2Nb0.2Mo0.2Ta0.2Cx (x = 1 and 0.8) combined with experiments and first-principles calculations. The Ti0.2Zr0.2Nb0.2Mo0.2Ta0.2Cx high-entropy ceramics show bu…
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Topological superconductors have drawn significant interest from the scientific community due to the accompanying Majorana fermions. Here, we report the discovery of electronic structure and superconductivity in high-entropy ceramics Ti0.2Zr0.2Nb0.2Mo0.2Ta0.2Cx (x = 1 and 0.8) combined with experiments and first-principles calculations. The Ti0.2Zr0.2Nb0.2Mo0.2Ta0.2Cx high-entropy ceramics show bulk type-II superconductivity with Tc about 4.00 K (x = 1) and 2.65 K (x = 0.8), respectively. The specific heat jump is equal to 1.45 (x = 1) and 1.52 (x = 0.8), close to the expected value of 1.43 for the BCS superconductor in the weak coupling limit. The high-pressure resistance measurements show that a robust superconductivity against high physical pressure in Ti0.2Zr0.2Nb0.2Mo0.2Ta0.2C, with a slight Tc variation of 0.3 K within 82.5 GPa. Furthermore, the first-principles calculations indicate that the Dirac-like point exists in the electronic band structures of Ti0.2Zr0.2Nb0.2Mo0.2Ta0.2C, which is potentially a topological superconductor. The Dirac-like point is mainly contributed by the d orbitals of transition metals M and the p orbitals of C. The high-entropy ceramics provide an excellent platform for the fabrication of novel quantum devices, and our study may spark significant future physics investigations in this intriguing material.
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Submitted 22 October, 2023;
originally announced October 2023.
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Floquet-engineering the exceptional points in parity-time-symmetric magnonics
Authors:
Xi-guang Wang,
Lu-lu Zeng,
Guang-hua Guo,
Jamal Berakdar
Abstract:
Magnons serve as a testing ground for fundamental aspects of Hermitian and non-Hermitian wave mechanics and are of high relevance for information technology. This study presents setups for realizing spatio-temporally driven parity-time (PT) symmetric magnonics based on coupled magnetic waveguides and magnonic crystals. A charge current in a metal layer with strong spin-orbit coupling sandwiched be…
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Magnons serve as a testing ground for fundamental aspects of Hermitian and non-Hermitian wave mechanics and are of high relevance for information technology. This study presents setups for realizing spatio-temporally driven parity-time (PT) symmetric magnonics based on coupled magnetic waveguides and magnonic crystals. A charge current in a metal layer with strong spin-orbit coupling sandwiched between two insulating magnetic waveguides leads to gain or loss in the magnon amplitude depending on the directions of the magnetization and the charge currents. When gain in one waveguide is balanced by loss in the other waveguide a PT-symmetric system hosting non-Hermitian degeneracies (or exceptional points (EPs)) is realized. For AC current multiple EPs appear for a certain gain/loss strength and mark the boundaries between the preserved PT-symmetry and the broken PT-symmetry phases. The number of islands of broken PT-symmetry phases and their extensions is tunable by the frequency and the strength of the spacer current. At EP and beyond, the induced and amplified magnetization oscillations are strong and self-sustained. In particular, these magnetization auto-oscillations in broken PT-symmetry phase occur at low current densities and do not require further adjustments such as tilt angle between electric polarization and equilibrium magnetization direction in spin-torque oscillators, pointing to a new design of these oscillators and their utilization in computing and sensoric. It is also shown how the periodic gain/loss mechanism allows for the generation of high-frequency spin waves with low-frequency currents. For spatially-periodic gain/loss acting on a magnonic crystal, magnon modes approaching each other at the Brillouin-zone boundaries are highly susceptible to PT-symmetry, allowing for a wave-vector-resolved experimental realization at very low currents.
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Submitted 8 October, 2023;
originally announced October 2023.
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Superconductivity in the cobalt-doped V3Si A15 intermetallic compound
Authors:
Lingyong Zeng,
Huawei Zhou,
Hong Du,
Ruidan Zhong,
Ruixin Guo,
Shu Guo,
Wanzhen Su,
Kuan Li,
Chao Zhang,
Peifeng Yu,
Huixia Luo
Abstract:
The A15 structure of superconductors is a prototypical type-II superconductor that has generated considerable interest since the early history of superconducting materials. This paper discusses the superconducting properties of previously unreported V3-xCoxSi alloys. It is found that the lattice parameter decreases with increasing cobalt-doped content and leads to an increased residual resistivity…
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The A15 structure of superconductors is a prototypical type-II superconductor that has generated considerable interest since the early history of superconducting materials. This paper discusses the superconducting properties of previously unreported V3-xCoxSi alloys. It is found that the lattice parameter decreases with increasing cobalt-doped content and leads to an increased residual resistivity ratio (RRR) value of the V3-xCoxSi system. Meanwhile, the superconducting transition temperature (Tc) cobalt-doped content. Furthermore, the fitted data show that the increase of cobalt-doped content also reduces the lower/upper critical fields of the V3-xCoxSi system. Type-II superconductivity is demonstrated on all V3-xCoxSi samples. With higher Co-doped content, V3-xCoxSi alloys may have superconducting and structural phase transitions at low-temperature regions. As the electron/atom (e/a) ratio increases, the Tc variation trend of V3Si is as pronounced as in crystalline alloys and monotonically follows the trend observed for amorphous superconductors.
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Submitted 20 September, 2023;
originally announced September 2023.
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Superconductivity in the bcc-type High-entropy Alloy TiHfNbTaMo
Authors:
Lingyong Zeng,
Jie Zhan,
Mebrouka Boubeche,
Kuan Li,
Longfu Li,
Peifeng Yu,
Kangwang Wang,
Chao Zhang,
Kui **,
Yan Sun,
Huixia Luo
Abstract:
X-ray powder diffraction, electrical resistivity, magnetization, and thermodynamic measurements were conducted to investigate the structure and superconducting properties of TiHfNbTaMo, a novel high-entropy alloy possessing a valence electron count (VEC) of 4.8. The TiHfNbTaMo HEA was discovered to have a body-centered cubic structure and a microscopically homogeneous distribution of the constitue…
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X-ray powder diffraction, electrical resistivity, magnetization, and thermodynamic measurements were conducted to investigate the structure and superconducting properties of TiHfNbTaMo, a novel high-entropy alloy possessing a valence electron count (VEC) of 4.8. The TiHfNbTaMo HEA was discovered to have a body-centered cubic structure and a microscopically homogeneous distribution of the constituent elements. This material shows type-II superconductivity with Tc = 3.42 K, lower critical field with 22.8 mT, and upper critical field with 3.95 T. Low-temperature specific heat measurements show that the alloy is a conventional s-wave type with a moderately coupled superconductor. First-principles calculations show that the density of states (DOS) of the TiHfNbTaMo alloy is dominated by hybrid d orbitals of these five metal elements. Additionally, the TiHfNbTaMo HEA exhibits three van Hove singularities. Furthermore, the VEC and the composition of the elements (especially the Nb elemental content) affect the Tc of the bcc-type HEA.
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Submitted 18 September, 2023;
originally announced September 2023.
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Gate-tunable Superconductivity in Hybrid InSb-Pb Nanowires
Authors:
Yan Chen,
David van Driel,
Charalampos Lampadaris,
Sabbir A Khan,
Khalifah Alattallah,
Lunjie Zeng,
Eva Olsson,
Tom Dvir,
Peter Krogstrup,
Yu Liu
Abstract:
We present a report on hybrid InSb-Pb nanowires that combine high spin-orbit coupling with a high critical field and a large superconducting gap. Material characterization indicates the Pb layer of high crystal quality on the nanowire side facets. Hard induced superconducting gaps and gate-tunable supercurrent are observed in the hybrid nanowires. These results showcase the promising potential of…
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We present a report on hybrid InSb-Pb nanowires that combine high spin-orbit coupling with a high critical field and a large superconducting gap. Material characterization indicates the Pb layer of high crystal quality on the nanowire side facets. Hard induced superconducting gaps and gate-tunable supercurrent are observed in the hybrid nanowires. These results showcase the promising potential of this material combination for a diverse range of applications in hybrid quantum transport devices.
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Submitted 26 September, 2023; v1 submitted 15 September, 2023;
originally announced September 2023.
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Superconductivity in the medium-entropy alloy TiVNbTa with a body-centered cubic structure
Authors:
Kuan Li,
Xunwu Hu,
Ruixin Guo,
Wenrui Jiang,
Lingyong Zeng,
Longfu Li,
Peifeng Yu,
Kangwang Wang,
Chao Zhang,
Shu Guo,
Ruidan Zhong,
Tao Xie,
DaoXin Yao,
Huixia Luo
Abstract:
Here we report the TiVNbTa medium-entropy alloy (MEA) superconductor with the mixed 3d - 5d elements synthesized by an arc-melting method. The TiVNbTa material has a body-centered cubic structure. The superconducting properties of TiVNbTa were studied by resistivity, magnetic susceptibility, and specific heat measurements. The experimental results show that the bulk superconducting phase transitio…
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Here we report the TiVNbTa medium-entropy alloy (MEA) superconductor with the mixed 3d - 5d elements synthesized by an arc-melting method. The TiVNbTa material has a body-centered cubic structure. The superconducting properties of TiVNbTa were studied by resistivity, magnetic susceptibility, and specific heat measurements. The experimental results show that the bulk superconducting phase transition temperature of TiVNbTa is about 4.65 K, and the upper and lower critical fields are 49.3(4) mT and 5.9(5) T, respectively, which indicates TiVNbTa is a type-II superconductor. First-principles calculations show that the d electrons of Ti, V, Nb, and Ta atoms play a significant role near the Fermi level. The results show TiVNbTa is a traditional s-wave superconductor.
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Submitted 30 August, 2023;
originally announced August 2023.
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Extremely strong coupling s-wave superconductivity in the medium-entropy alloy TiHfNbTa
Authors:
Lingyong Zeng,
Xunwu Hu,
Mebrouka Boubeche,
Kuan Li,
Longfu Li,
Peifei Yu,
Kangwang Wang,
Chao Zhang,
Kui **,
DaoXin Yao,
Huixia Luo
Abstract:
Here we report a TiHfNbTa bulk medium-entropy alloy (MEA) superconductor crystallized in the body-centered cubic structure, which is synthesized by an arc melting method. Superconducting properties of the TiHfNbTa are studied by employing magnetic susceptibility, resistivity, and specific heat measurements. Experimental results show a bulk superconducting transition temperature (Tc) of around 6.75…
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Here we report a TiHfNbTa bulk medium-entropy alloy (MEA) superconductor crystallized in the body-centered cubic structure, which is synthesized by an arc melting method. Superconducting properties of the TiHfNbTa are studied by employing magnetic susceptibility, resistivity, and specific heat measurements. Experimental results show a bulk superconducting transition temperature (Tc) of around 6.75 K. The lower and upper crit-ical fields for TiHfNbTa are 45.8 mT and 10.46 T, respectively. First-principles calculations show that the d electron of Ti, Hf, Nb, and Ta is the main contribution near the Fermi level. Our results indicate that the superconductivity is a conven-tional s-wave type with extremely strong coupling. The extremely strong coupling behavior in the s-wave type TiHfNbTa MEA superconductor is unusual because it generally happens in cuprates, pnictides, and other unconventional superconductors.
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Submitted 28 August, 2023;
originally announced August 2023.
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A solvable model for symmetry-breaking phase transitions
Authors:
Shatrughna Kumar,
Pengfei Li,
Liangwei Zeng,
**gsong He,
Boris A. Malomed
Abstract:
Analytically solvable models are benchmarks in studies of phase transitions and pattern-forming bifurcations. Such models are known for phase transitions of the second kind in uniform media, but not for localized states (solitons), as integrable equations which produce solitons do not admit intrinsic transitions in them. We introduce a solvable model for symmetry-breaking phase transitions of both…
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Analytically solvable models are benchmarks in studies of phase transitions and pattern-forming bifurcations. Such models are known for phase transitions of the second kind in uniform media, but not for localized states (solitons), as integrable equations which produce solitons do not admit intrinsic transitions in them. We introduce a solvable model for symmetry-breaking phase transitions of both the first and second kinds (alias sub- and supercritical bifurcations) for solitons pinned to a combined linear-nonlinear double-well potential, represented by a symmetric pair of delta-functions. Both self-focusing and defocusing signs of the nonlinearity are considered. In the former case, exact solutions are produced for symmetric and asymmetric solitons. The solutions explicitly demonstrate a switch between the symmetry-breaking transitions of the first and second kinds (i.e., sub- and supercritical bifurcations, respectively). In the self-defocusing model, the solution demonstrates the transition of the second kind which breaks antisymmetry of the first excited state.
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Submitted 16 August, 2023;
originally announced August 2023.
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The interface states in gate-all-around transistors (GAAFETs)
Authors:
Yue-Yang Liu,
Haoran Lu,
Zirui Wang,
Hui-Xiong Deng,
Lang Zeng,
Zhongming Wei,
Jun-Wei Luo,
Runsheng Wang
Abstract:
The atomic-level structural detail and the quantum effects are becoming crucial to device performance as the emerging advanced transistors, representatively GAAFETs, are scaling down towards sub-3nm nodes. However, a multiscale simulation framework based on atomistic models and ab initio quantum simulation is still absent. Here, we propose such a simulation framework by fulfilling three challengin…
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The atomic-level structural detail and the quantum effects are becoming crucial to device performance as the emerging advanced transistors, representatively GAAFETs, are scaling down towards sub-3nm nodes. However, a multiscale simulation framework based on atomistic models and ab initio quantum simulation is still absent. Here, we propose such a simulation framework by fulfilling three challenging tasks, i.e., building atomistic all-around interfaces between semiconductor and amorphous gate-oxide, conducting large-scale first-principles calculations on the interface models containing up to 2796 atoms, and finally bridging the state-of-the-art atomic level calculation to commercial TCAD. With this framework, two unnoticed origins of interface states are demonstrated, and their tunability by changing channel size, orientation and geometry is confirmed. The quantitative study of interface states and their effects on device performance explains why the nanosheet channel is preferred in industry. We believe such a bottom-up framework is necessary and promising for the accurate simulation of emerging advanced transistors.
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Submitted 15 August, 2023;
originally announced August 2023.
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Discovery of the high-entropy carbide ceramic topological superconductor candidate (Ti0.2Zr0.2Nb0.2Hf0.2Ta0.2)C
Authors:
Lingyong Zeng,
Zequan Wang,
**g Song,
Gaoting Lin,
Ruixin Guo,
Si-Chun Luo,
Shu Guo,
Kuan Li,
Peifei Yu,
Chao Zhang,
Wei-Ming Guo,
Jie Ma,
Yusheng Hou,
Huixia Luo
Abstract:
High-entropy ceramics (HECs) are solid solutions of inorganic compounds with one or more Wyckoff sites shared by equal or near-equal atomic ratios of multi-principal elements. Material design and property tailoring possibilities emerge from this new class of materials. Here, we report the discovery of superconductivity around 2.35 K and topological properties in the (Ti0.2Zr0.2Nb0.2Hf0.2Ta0.2)C hi…
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High-entropy ceramics (HECs) are solid solutions of inorganic compounds with one or more Wyckoff sites shared by equal or near-equal atomic ratios of multi-principal elements. Material design and property tailoring possibilities emerge from this new class of materials. Here, we report the discovery of superconductivity around 2.35 K and topological properties in the (Ti0.2Zr0.2Nb0.2Hf0.2Ta0.2)C high-entropy carbide ceramic (HECC), which has not been observed before in any of the investigated HECC. Density functional theory calculations showed that six type-II Dirac points exist in (Ti0.2Zr0.2Nb0.2Hf0.2Ta0.2)C, which mainly contributed from the t2g orbitals of transition metals and the p orbitals of C. Due to the stability of the structure, we also observed robust superconductivity under pressure in this HEC superconductor. This study expands the physical properties of HECs, which may become a new material platform for superconductivity research, especially for studying the coupling between superconductivity and topological physics.
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Submitted 5 July, 2023;
originally announced July 2023.
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Closed-loop Error Correction Learning Accelerates Experimental Discovery of Thermoelectric Materials
Authors:
Hitarth Choubisa,
Md Azimul Haque,
Tong Zhu,
Lewei Zeng,
Maral Vafaie,
Derya Baran,
Edward H Sargent
Abstract:
The exploration of thermoelectric materials is challenging considering the large materials space, combined with added exponential degrees of freedom coming from do** and the diversity of synthetic pathways. Here we seek to incorporate historical data and update and refine it using experimental feedback by employing error-correction learning (ECL). We thus learn from prior datasets and then adapt…
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The exploration of thermoelectric materials is challenging considering the large materials space, combined with added exponential degrees of freedom coming from do** and the diversity of synthetic pathways. Here we seek to incorporate historical data and update and refine it using experimental feedback by employing error-correction learning (ECL). We thus learn from prior datasets and then adapt the model to differences in synthesis and characterization that are otherwise difficult to parameterize. We then apply this strategy to discovering thermoelectric materials where we prioritize synthesis at temperatures < 300°C. We document a previously unreported chemical family of thermoelectric materials, PbSe:SnSb, finding that the best candidate in this chemical family, 2 wt% SnSb doped PbSe, exhibits a power factor more than 2x that of PbSe. Our investigations show that our closed-loop experimentation strategy reduces the required number of experiments to find an optimized material by as much as 3x compared to high-throughput searches powered by state-of-the-art machine learning models. We also observe that this improvement is dependent on the accuracy of prior in a manner that exhibits diminishing returns, and after a certain accuracy is reached, it is factors associated with experimental pathways that dictate the trends.
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Submitted 26 February, 2023;
originally announced February 2023.
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Ta4CoSi: a Tantalum-rich superconductor with a honeycomb network structure
Authors:
Lingyong Zeng,
Xunwu Hu,
Shu Guo,
Gaoting Lin,
**g Song,
Kuan Li,
Yiyi He,
Yanhao Huang,
Chao Zhang,
Peifeng Yu,
Jie Ma,
Dao-Xin Yao,
Huixia Luo
Abstract:
The crystal structure of solid-state materials with unique lattices is considered one of the main factors determining physical properties, including superconductivity. Materials with honeycomb lattices have inspired intense research interest for their novel properties. A previously unknown compound, Ta4CoSi, are discussed herein and its crystal structure and superconducting properties. It crystall…
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The crystal structure of solid-state materials with unique lattices is considered one of the main factors determining physical properties, including superconductivity. Materials with honeycomb lattices have inspired intense research interest for their novel properties. A previously unknown compound, Ta4CoSi, are discussed herein and its crystal structure and superconducting properties. It crystallizes in a CuAl2-type structure (space group P4/mcm, No. 124) with the lattice parameters a = b = 6.17755(7)Å and c = 4.98443(8) Å, featuring honeycomb networks of Ta-Ta in (110) plane. Superconductivity is observed below the critical temperature of 2.45 K, while lower and upper critical magnetic fields are 9.86 mT and 0.84 T, respectively. Experiments and theoretical calculations show that the honeycomb lattices significantly influence the superconducting properties. This material may thus provide a new platform for investigating the exotic superconductivity of honeycomb networks.
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Submitted 28 September, 2022;
originally announced September 2022.
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Scalable fabrication of edge contacts to 2D materials
Authors:
Naveen Shetty,
Hans He,
Richa Mitra,
Johanna Huhtasaari,
Konstantina Iordanau,
Julia Wiktor,
Sergey Kubatkin,
Saroj Dash,
Rositsa Yakimova,
Lunjie Zeng,
Eva Olsson,
Samuel Lara-Avila
Abstract:
We present a fabrication method for reliably and reproducibly forming electrical contacts to 2D materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal dichalcogenides (TMDCs) molybdenum disulfide ($MoS_2$). For epigraphene, the specific contact resistances are of the order of…
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We present a fabrication method for reliably and reproducibly forming electrical contacts to 2D materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal dichalcogenides (TMDCs) molybdenum disulfide ($MoS_2$). For epigraphene, the specific contact resistances are of the order of $ρ_c$ ~ $50$ $Ωμm$, and follow the Landauer quantum limit, $ρ_c \propto n^{-1/2}$, with $n$ being the carrier density of graphene. For $MoS_2$ flakes, our edge contacts enable field effect transistors (FET) with ON/OFF ratio of $> 10^6$ at room temperature ( $> 10^9$ at cryogenic temperatures). The fabrication route here demonstrated allows for contact metallization using thermal evaporation and also by sputtering, giving an additional flexibility when designing electrical interfaces, which is key in practical devices and when exploring the electrical properties of emerging materials.
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Submitted 6 March, 2023; v1 submitted 8 June, 2022;
originally announced June 2022.
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Superconducting dome associated with the suppression and re-emergence of charge density wave states upon sulfur substitution in CuIr2Te4 chalcogenides
Authors:
Mebrouka Boubeche,
Ningning Wang,
Jian** Sun,
Pengtao Yang,
Lingyong Zeng,
Shaojuan Luo,
Yiyi He,
Jia Yu,
Meng Wang,
**guang Cheng,
Huixia Luo
Abstract:
We report the path from the charge density wave (CDW)-bearing superconductor CuIr2Te4 to the metal insulator transition (MIT)-bearing compound CuIr2S4 by chemical alloying with the gradual substitution of S for Te. The evolution of structural and physical properties of the CuIr2Te4-xSx polycrystalline system with the do** range from 0 to 4 is systemically examined. The X-ray diffraction (XRD) re…
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We report the path from the charge density wave (CDW)-bearing superconductor CuIr2Te4 to the metal insulator transition (MIT)-bearing compound CuIr2S4 by chemical alloying with the gradual substitution of S for Te. The evolution of structural and physical properties of the CuIr2Te4-xSx polycrystalline system with the do** range from 0 to 4 is systemically examined. The X-ray diffraction (XRD) results imply CuIr2Te4-xSx in the range between 0 and 0.5 crystallizes in a NiAs defected trigonal structure, whereas it adapts to the cubic spinel structure in the do** range from 3.6 to 4 and it is a mixed phase in the do** range from 0.5 to 3.6. Unexpectedly, the resistivity and magnetization measurements reveal that small-concentration S substitution for Te can suppress the CDW transition, but it reappears around x = 0.2, and the CDW transition temperature enhances clearly as x augments in the range from 0.2 to 0.5. Besides, the superconducting critical temperature (Tc) first increases with S do** content and then decreases after reaching a maximum Tc = 2.82 K for CuIr2Te3.85S0.15. MIT order has been observed in the spinel region from 3.6 to 4 associated with TMI increasing with x increasing. Finally, the rich electronic phase diagram of temperature versus x for this CuIr2Te4-xSx system is assembled, where the superconducting dome is associated with the suppression and re-emergence of CDW as well as MIT states at the end upon sulfur substitution in the CuIr2Te4-xSx chalcogenides.
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Submitted 11 March, 2022;
originally announced March 2022.
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Interplay between Charge-Density-Wave, Superconductivity, and Ferromagnetism in CuIr2-xCrxTe4 Chalcogenides
Authors:
Lingyong Zeng,
Xunwu Hu,
Ningning Wang,
Jian** Sun,
Pengtao Yang,
Mebrouka Boubeche,
Shaojuan Luo,
Yiyi He,
**guang Cheng,
Dao-Xin Yao,
Huixia Luo
Abstract:
We report the crystal structure, charge-density-wave (CDW), superconductivity (SC), and ferromagnetism (FM) in CuIr2-xCrxTe4 chalcogenides. Powder x-ray diffraction (PXRD) results reveal that CuIr2-xCrxTe4 series are distinguished between two structural types and three different regions: (i) layered trigonal structure region, (ii) mixed phase regions, (iii) spinel structure region. Besides, Cr sub…
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We report the crystal structure, charge-density-wave (CDW), superconductivity (SC), and ferromagnetism (FM) in CuIr2-xCrxTe4 chalcogenides. Powder x-ray diffraction (PXRD) results reveal that CuIr2-xCrxTe4 series are distinguished between two structural types and three different regions: (i) layered trigonal structure region, (ii) mixed phase regions, (iii) spinel structure region. Besides, Cr substitution for Ir site results in rich physical properties including the collapse of CDW, the formation of dome-shaped like SC, and the emergence of magnetism. Cr do** slightly elevates the superconducting critical temperature (Tsc) to its highest Tsc = 2.9 K around x = 0.06. As x increases from 0.3 to 0.4, the ferromagnetic Curie temperature (Tc) increases from 175 to 260 K. However, the Tc remains unchanged in the spinel range from 1.9 to 2. This finding provides a comprehensive material platform for investigating the interplay between CDW, SC, and FM multipartite quantum states.
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Submitted 9 March, 2022;
originally announced March 2022.
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Time Division Multiplexing Ising Computer Using Single Tunable True Random Number Generator Based on Spin Torque Nano-Oscillator
Authors:
Bolin Zhang,
Yu Liu,
Tianqi Gao,
Deming Zhang,
Weisheng Zhao,
Lang Zeng
Abstract:
Ising computer is a powerful computation scheme to deal with NP-hard optimization problems that cannot be efficiently addressed by conventional computers. A robust probabilistic bit (P-Bit) which is realized by a hardware entity fluctuating in time between -1 and 1 plays a key role in the success of Ising computer. Spintronics technology, such as stochastic nanomagnet, is recently proposed as a go…
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Ising computer is a powerful computation scheme to deal with NP-hard optimization problems that cannot be efficiently addressed by conventional computers. A robust probabilistic bit (P-Bit) which is realized by a hardware entity fluctuating in time between -1 and 1 plays a key role in the success of Ising computer. Spintronics technology, such as stochastic nanomagnet, is recently proposed as a good platform for the hardware emulation of P-Bit. Here, we report, for the first time, a Time Division Multiplexing (TDM) Ising computer using single tunable true random number generator which is comprised of a Spin Torque Nano-Oscillator (STNO). First, the intrinsic frequency fluctuation of the STNO is utilized to design a simple digital true random number generator (TRNG). The true random number generator is further evolved into a tunable random number generator to act as a P-Bit. Second, in order to accomplish combinational optimization with our proposed P-Bit under Ising model, a novel incremental coupling rule is proposed. With such coupling rule between P-Bit array, high fidelity NOT and XOR logic gate is demonstrated. Third, it is proposed that our digital TRNG can be simply reused acting as a P-Bit array by time division multiplexing. The whole Ising computer can be implemented by one single STNO, and integer factorization of as high as 87% accuracy rate is achieved.
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Submitted 21 February, 2022;
originally announced February 2022.
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Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor
Authors:
Chushan Li,
Mebrouka Boubeche,
Lingyong Zeng,
Yi Ji,
Qixuan Li,
Donghui Guo,
Qizhong Zhu,
Dingyong Zhong,
Huixia Luo,
Huichao Wang
Abstract:
In disordered transition-metal dichalcogenide (TMD) superconductor, both the strong spin-orbit coupling (SOC) and disorder show remarkable effects on superconductivity. However, the features of SOC and disorder were rarely detected directly. Here we report the quantum transport behaviors arising from the interplay of SOC and disorder in the TMD superconductor 1T-NbSeTe. Before entering the superco…
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In disordered transition-metal dichalcogenide (TMD) superconductor, both the strong spin-orbit coupling (SOC) and disorder show remarkable effects on superconductivity. However, the features of SOC and disorder were rarely detected directly. Here we report the quantum transport behaviors arising from the interplay of SOC and disorder in the TMD superconductor 1T-NbSeTe. Before entering the superconducting state, the single crystal at low temperature shows a resistivity upturn, which is T1/2 dependent and insensitive to the applied magnetic fields. The magnetoresistance (MR) at low temperatures shows a H1/2 dependence at high magnetic fields. The characteristics are in good agreement with the electron-electron interaction (EEI) in a disordered conductor. In addition, the upturn changes and MR at low magnetic fields suggest the contribution of weak antilocalization (WAL) effect arising from the strong SOC in the material. Moreover, the quantitative analyses of the transport features in different samples imply anomalous disorder-enhanced superconductivity that needs to be further understood. The results reveal the disorder enhanced EEI and the strong SOC induced WAL effect in 1T-NbSeTe, which illustrate the resistivity minimum in the widely studied doped superconductors. The work also provides insights into the disorder effect on the superconductivity.
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Submitted 9 February, 2022;
originally announced February 2022.
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Negative Chemical Pressure Effect on Superconductivity and Charge Density Wave of Cu0.5Ir1-xZrxTe2
Authors:
Lingyong Zeng,
Yi Ji,
Dongpeng Yu,
Shu Guo,
Yiyi He,
Kuan Li,
Yanhao Huang,
Chao Zhang,
Peifeng Yu,
Shaojuan Luo,
Huichao Wang,
Huixia Luo
Abstract:
This study demonstrates the design and synthesis of Cu0.5Ir1-xZrxTe2 system by partial substitution of Ir with Zr acting as a negative chemical pressure. With the do** of Zr, the cell parameters significantly expand, signifying an effective negative chemical pressure. The experimental results found evidence that the charge density wave (CDW)-like order is immediately quenched by subtle Zr substi…
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This study demonstrates the design and synthesis of Cu0.5Ir1-xZrxTe2 system by partial substitution of Ir with Zr acting as a negative chemical pressure. With the do** of Zr, the cell parameters significantly expand, signifying an effective negative chemical pressure. The experimental results found evidence that the charge density wave (CDW)-like order is immediately quenched by subtle Zr substitution for Ir and a classical dome-shape Tc(x) that peaked at 2.80 K can be observed. The optimal Cu0.5Ir0.95Zr0.05Te2 compound is a BCS-type superconductor and exhibits type-II SC. However, high Zr concentration can provoke disorder, inducing the reappearance of CDW order. The present study shows that the Cu0.5Ir1-xZrxTe2 system may provide a new platform for further understanding of multiple electronic orders in transition metal dichalcogenides.
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Submitted 9 March, 2022; v1 submitted 8 February, 2022;
originally announced February 2022.
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Superconductivity with the enhanced upper critical field in the Pt-Do** CuRh2Se4 spinel
Authors:
Yiyi He,
Yi-Xin You,
Lingyong Zeng,
Shu Guo,
Huawei Zhou,
Kuan Li,
Yanhao Huang,
Peifeng Yu,
Chao Zhang,
Chao Cao,
Huixia Luo
Abstract:
We report the effect of Pt do** on the superconductivity in CuRh2Se4 spinel using a combined experimental and theoretical study. Our XRD results reveal that the Cu(Rh1-xPtx)2Se4 crystallizes in the structure with a space group of Fd3-m (No. 227), and the lattice parameter a increases with Pt do**. The resistivity and magnetic susceptibility measurement results verify that the superconducting t…
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We report the effect of Pt do** on the superconductivity in CuRh2Se4 spinel using a combined experimental and theoretical study. Our XRD results reveal that the Cu(Rh1-xPtx)2Se4 crystallizes in the structure with a space group of Fd3-m (No. 227), and the lattice parameter a increases with Pt do**. The resistivity and magnetic susceptibility measurement results verify that the superconducting transition temperature (Tc) forms a dome-like shape with a maximum value of 3.84 K at x = 0.06. It is also observed that the Pt-do** slightly reduces the lower critical magnetic field from 220 Oe in CuRh2Se4 to 168 Oe in Cu(Rh0.94Pt0.06)2Se4, while it significantly enhances the upper critical magnetic field, reaching the maximum of 4.93 T in the Cu(Rh0.94Pt0.06)2Se4 sample. The heat capacity result indicates that the sample Cu(Rh0.91Pt0.09)2Se4 is a bulk superconductor. First-principles calculations suggest that the Pt-do** leads to a red-shift of a density of state peak near the Fermi level, consistent with the dome-like Tc observed experimentally.
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Submitted 8 February, 2022;
originally announced February 2022.
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Superconductivity in CuIr2-xAlxTe4 telluride chalcogenides
Authors:
Dong Yan,
Lingyong Zeng,
Yijie Zeng,
Yishi Lin,
Junjie Yin,
Meng Wang,
Yihua Wang,
Dao-Xin Yao,
Huixia Luo
Abstract:
The relationship between charge-density-wave (CDW) and superconductivity (SC), two vital physical phases in condensed matter physics, has always been the focus of scientists' research over the past decades. Motivated by this research hotspot, we systematically studied the physical properties of the layered telluride chalcogenide superconductors CuIr2-xAlxTe4. Through the resistance and magnetizati…
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The relationship between charge-density-wave (CDW) and superconductivity (SC), two vital physical phases in condensed matter physics, has always been the focus of scientists' research over the past decades. Motivated by this research hotspot, we systematically studied the physical properties of the layered telluride chalcogenide superconductors CuIr2-xAlxTe4. Through the resistance and magnetization measurements, we found that the CDW order was destroyed by a small amount of Al do**. Meanwhile, the superconducting transition temperature (Tc) kept changing with the change of do** amount and rose towards the maximum value of 2.75 K when x = 0.075. The value of normalized specific heat jump for the highest Tc sample CuIr1.925Al0.075Te4 was 1.53, which was larger than the BCS value of 1.43 and showed that bulk superconducting nature. In order to clearly show the relationship between SC and CDW states, we propose a phase diagram of Tc vs. do** content.
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Submitted 21 December, 2021;
originally announced December 2021.
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Enhanced superconductivity with possible re-appearance of charge density wave states in polycrystalline Cu$_{1-x}$Ag$_x$Ir$_2$Te$_4$ alloys
Authors:
Mebrouka Boubeche,
Lingyong Zeng,
Xunwu Hu,
Shu Guo,
Yiyi He,
Peifeng Yu,
Yanhao Huang,
Chao Zhang,
Shaojuan Luo,
Dao-Xin Yao,
Huixia Luo
Abstract:
In this study, we determined the effect of do** with the noble metal Ag on Ir$_2$Te$_4$ superconductors. Based on the resistivity, magnetization, and heat capacity, we explored the changes in the superconductivity and charge density wave for Cu$_{1-x}$Ag$_x$Ir$_2$Te$_4$ as a function of isoelectric substitution. We assessed a complete set of competing states from suppressed charge density wave i…
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In this study, we determined the effect of do** with the noble metal Ag on Ir$_2$Te$_4$ superconductors. Based on the resistivity, magnetization, and heat capacity, we explored the changes in the superconductivity and charge density wave for Cu$_{1-x}$Ag$_x$Ir$_2$Te$_4$ as a function of isoelectric substitution. We assessed a complete set of competing states from suppressed charge density wave in the low do** region to superconductor in the middle do** region and re-entrant charge density wave in the high do** region, thereby obtaining an electronic phase diagram, where the superconducting dome was near bipartite charge density wave regions with a maximum superconducting temperature Tc of about 2.93 K at an Ag do** level of 12%. The lower H$_{c1}$ and upper H$_{c2}$ critical magnetic fields were determined for some representative samples in the Cu$_{1-x}$Ag$_x$Ir$_2$Te$_4$ series based on magnetization and resistivity measurements, respectively. We showed that H$_{c1}$ decreased whereas H$_{c2}$ increased as the do** content increased. The specific heat anomalies at the superconducting transitions $ΔC_{el}/γT_c$ for representative samples comprising Cu$_{0.92}$Ag$_{0.08}$Ir$_2$Te$_4$, Cu$_{0.88}$Ag$_{0.12}$Ir$_2$Te$_4$, and Cu$_{0.85}$Ag$_{0.15}$Ir$_2$Te$_4$ were approximately 1.40, 1.44, and 1.42, respectively, which are all near the Bardeen-Cooper-Schrieffer value of 1.43 and they indicate bulk superconductivity in these compounds.
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Submitted 8 December, 2021;
originally announced December 2021.
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A modified divide-and-conquer based machine learning method for predicting creep life of superalloys
Authors:
Ronghai Wu,
Lei Zeng,
Xing Ai,
Yunsong Zhao
Abstract:
Recently Liu et al. (Acta Mater., 2020) proposed a new divide-and-conquer based machine learning method for predicting creep life of superalloys. The idea is enlightening though, the prediction accuracy and intelligence remain to be improved. In the present work, we modify the method by adding a dimensionality reduction algorithm before the clustering step and introducing a grid search algorithm t…
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Recently Liu et al. (Acta Mater., 2020) proposed a new divide-and-conquer based machine learning method for predicting creep life of superalloys. The idea is enlightening though, the prediction accuracy and intelligence remain to be improved. In the present work, we modify the method by adding a dimensionality reduction algorithm before the clustering step and introducing a grid search algorithm to the regression model selection step. As a consequence, the clustering result becomes much more desirable and the accuracy of predicted creep life is dramatically improved. The root-mean-square error, mean-absolute-percentage error and relevant coefficient of the original method are 0.2341, 0.0595 and 0.9121, while those of the modified method are 0.0285, 0.0196, and 0.9806, respectively. Moreover, the ad-hoc determination of hyperparameters in the original method is replaced by automated determination of hyperparameters in the modified method, which considerably improves the intelligence of the method.
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Submitted 24 November, 2021;
originally announced November 2021.
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Quadratic fractional solitons
Authors:
Liangwei Zeng,
Yongle Zhu,
Boris A. Malomed,
Dumitru Mihalache,
Qing Wang,
Hu Long,
Yi Cai,
Xiaowei Lu,
**gzhen Li
Abstract:
We introduce a system combining the quadratic self-attractive or composite quadratic-cubic nonlinearity, acting in the combination with the fractional diffraction, which is characterized by its Lévy index $α$. The model applies to a gas of quantum particles moving by Lévy flights, with the quadratic term representing the Lee-Huang-Yang correction to the mean-field interactions. A family of fundame…
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We introduce a system combining the quadratic self-attractive or composite quadratic-cubic nonlinearity, acting in the combination with the fractional diffraction, which is characterized by its Lévy index $α$. The model applies to a gas of quantum particles moving by Lévy flights, with the quadratic term representing the Lee-Huang-Yang correction to the mean-field interactions. A family of fundamental solitons is constructed in a numerical form, while the dependence of its norm on the chemical potential characteristic is obtained in an exact analytical form. The family of \textit{quasi-Townes solitons}, appearing in the limit case of $α=1/2$, is investigated by means of a variational approximation. A nonlinear lattice, represented by spatially periodical modulation of the quadratic term, is briefly addressed too. The consideration of the interplay of competing quadratic (attractive) and cubic (repulsive) terms with a lattice potential reveals families of single-, double-, and triple-peak gap solitons (GSs) in two finite bandgaps. The competing nonlinearity gives rise to alternating regions of stability and instability of the GS, the stability intervals shrinking with the increase of the number of peaks in the GS.
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Submitted 3 November, 2021; v1 submitted 31 October, 2021;
originally announced November 2021.
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Anomalous Charge Density Wave State Evolution and Dome-like Superconductivity in CuIr2Te4-xSex Chalcogenides
Authors:
Mebrouka Boubeche,
Ningning Wang,
Jian** Sun,
Pengtao Yang,
Lingyong Zeng,
Qizhi Li,
Yiyi He,
Shaojuan Luo,
**guang Cheng,
Yingying Peng,
Huixia Luo
Abstract:
We report the anomalous charge density wave (CDW) state evolution and dome-like superconductivity (SC) in CuIr2Te4-xSex series. Room temperature powder X ray-diffraction (PXRD) results indicate that CuIr2Te4-xSex compounds retain the same structure as the host CuIr2Te4 and the unit cell constants a and c manifest a linear decline with increasing Se content. Magnetization, resistivity and heat capa…
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We report the anomalous charge density wave (CDW) state evolution and dome-like superconductivity (SC) in CuIr2Te4-xSex series. Room temperature powder X ray-diffraction (PXRD) results indicate that CuIr2Te4-xSex compounds retain the same structure as the host CuIr2Te4 and the unit cell constants a and c manifest a linear decline with increasing Se content. Magnetization, resistivity and heat capacity results suggest that superconducting transition temperature (Tc) exhibits a weak dome-like variation as substituting Te by Se with the maximum Tc = 2.83 K for x = 0.1 followed by suppression in Tc and simultaneous decrease of the superconducting volume fraction. Unexpectedly, the CDW-like transition (TCDW) is suppressed with lower Se do** but re-emerges at higher do**. Meanwhile, the temperature-dependent XRD measurements show that the trigonal structure is stable at 20 K, 100 K and 300 K for the host sample and the do** composition with x = 0.5, thus we propose that the behaviour CDW-like transition arises from the disorder effect created by chemical do** and is not related to structural transition. The lower and the upper critical fields of these compounds are also addressed.
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Submitted 6 September, 2021;
originally announced September 2021.
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Tuning hole mobility of individual p-doped GaAs nanowires by uniaxial tensile stress
Authors:
Lunjie Zeng,
Jonatan Holmer,
Rohan Dhall,
Christoph Gammer,
Andrew M. Minor,
Eva Olsson
Abstract:
Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobility in individual GaAs nanowires, using in situ transmission electron microscopy (TEM). The conductivity of the nanowire…
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Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobility in individual GaAs nanowires, using in situ transmission electron microscopy (TEM). The conductivity of the nanowires varied with applied uniaxial tensile stress, showing an initial decrease of ~5-20% up to a stress of 1~ 2 GPa, subsequently increasing up to the elastic limit of the nanowires. This is attributed to a hole mobility variation due to changes in the valence band structure caused by stress and strain. The corresponding lattice strain in the nanowires was quantified by in situ 4D-scanning TEM (STEM) and showed a complex spatial distribution at all stress levels. Meanwhile, a significant red shift of the band gap induced by the stress and strain was unveiled by monochromated electron energy loss spectroscopy.
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Submitted 13 April, 2021;
originally announced April 2021.
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Superconductivity and Charge Density Wave of CuIr2Te4 by Iodine Do**
Authors:
Mebrouka Boubeche,
Jia Yu,
Chushan Li,
Huichao Wang,
Lingyong Zeng,
Yiyi He,
Xiaopeng Wang,
Wanzhen Su,
Meng Wang,
Dao-Xin Yao,
Zhijun Wang,
Huixia Luo
Abstract:
Here we report a systematic investigation on the evolution of the structural and physical properties, including the charge density wave and superconductivity of the polycrystalline CuIr2Te4-xIx. X-ray diffraction results indicate that both of a and c lattice parameters increase linearly. The resistivity measurements indicate that the charge density wave is destabilized with slight x but reappears…
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Here we report a systematic investigation on the evolution of the structural and physical properties, including the charge density wave and superconductivity of the polycrystalline CuIr2Te4-xIx. X-ray diffraction results indicate that both of a and c lattice parameters increase linearly. The resistivity measurements indicate that the charge density wave is destabilized with slight x but reappears when x is large than 0.9. Meanwhile, the superconducting transition temperature enhances as x raises and reaches a maximum value of around 2.95 K for the optimal composition CuIr2Te3.9I0.1 followed by a slight decrease with higher iodine do** content. The specific heat jump for the optimal composition CuIr2Te3.9I0.1 is approximately 1.46, which is close to the Bardeen Cooper Schrieffer value which is 1.43, indicating it is a bulk superconductor. The results of thermodynamic heat capacity measurements under different magnetic fields, magnetization and magneto-transport measurements further suggest that CuIr2Te4-xIx bulks are type II superconductors. Finally, an electronic phase diagram for this CuIr2Te4-xIx system has been constructed. The present study provides a suitable material platform for further investigation of the interplay of the CDW and superconductivity.
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Submitted 9 January, 2021;
originally announced January 2021.
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Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in Co$_x$Fe$_{1-x}$ single-crystal films
Authors:
F. L. Zeng,
Z. Y. Ren,
Y. Li,
J. Y. Zeng,
M. W. Jia,
J. Miao,
A. Hoffmann,
W. Zhang,
Y. Z. Wu,
Z. Yuan
Abstract:
Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co$_x$Fe$_{1-x}$ alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special $k$-points can be shifted towards or away f…
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Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co$_x$Fe$_{1-x}$ alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special $k$-points can be shifted towards or away from the Fermi energy by varying the alloy composition and hence the exchange splitting, thus allowing AMR tunability. The prediction is confirmed by delicate transport measurements, which further reveal a reciprocal relationship of the longitudinal and transverse resistivities along different crystal axes.
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Submitted 3 August, 2020;
originally announced August 2020.
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Influence of Ln elements (Ln = La, Pr, Nd, Sm) on the structure and oxygen permeability of Ca-containing dual-phase membranes
Authors:
Shu Wang,
Lei Shi,
Mebrouka Boubeche,
Xiaopeng Wang,
Lingyong Zeng,
Haoqi Wang,
Zhiang Xie,
Wen Tan,
Huixia Luo
Abstract:
Develo** good performance and low-cost oxygen permeable membranes for CO2 capture based on the oxy-fuel concept is greatly desirable but challenging. Despite tremendous efforts in exploring new CO2-stable dual-phase membranes, its presence is however still far from meeting the industrial requirements. Here we report a series of new Ca-containing CO2-resistant oxygen transporting membranes with c…
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Develo** good performance and low-cost oxygen permeable membranes for CO2 capture based on the oxy-fuel concept is greatly desirable but challenging. Despite tremendous efforts in exploring new CO2-stable dual-phase membranes, its presence is however still far from meeting the industrial requirements. Here we report a series of new Ca-containing CO2-resistant oxygen transporting membranes with composition 60wt.%Ce0.9Ln0.1O2-40wt.%Ln0.6Ca0.4FeO3(CLnO-LnCFO; Ln = La, Pr, Nd, Sm) synthesized via a Pechini one-pot method. Our results indicate all investigated compounds are composed of perovskite and fluorite phases, while the perovskite phases in the CNO-NCFO and CSO-SCFO membranes after sintering generates Ca-rich and Ca-less two kinds of grains with different morphologies, where the Ca-less small perovskite grains block the transport of oxygen ions and eventually result in poor oxygen permeability. Among our investigated CLnO-LnCFO membranes, CPO-PCFO exhibits the highest oxygen permeability and excellent CO2 stability, which were mainly associated with the improvement in crystal symmetry, non-negligible electronic conductivity of fluorite phase and the enhancement in electronic conductivity of perovskite. Our results establish Ca-containing oxides as candidate material platforms for membrane engineering devices that combine CO2 capture and oxygen separation.
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Submitted 7 July, 2020;
originally announced July 2020.
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Charge density wave and superconductivity in the family of telluride chalcogenides Zn1-xCuxIr2-yN(N = Al, Ti, Rh)yTe4
Authors:
Dong Yan,
Yijie Zeng,
Yishi Lin,
Lingyong Zeng,
Junjie Yin,
Yuan He,
Mebrouka Boubeche,
Meng Wang,
Yihua Wang,
Dao-Xin Yao,
Huixia Luo
Abstract:
The interplay between superconductivity and charge density wave (CDW)/metal-to-insulator transition (MIT) has long been interested and studied in condensed matter physics. Here we study systematically the charge density wave and superconductivity properties in the solid solutions Zn1-xCuxIr2-yN(N = Al, Ti, Rh)yTe4. Resistivity, magnetic susceptibility and specific heat measurements indicate that t…
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The interplay between superconductivity and charge density wave (CDW)/metal-to-insulator transition (MIT) has long been interested and studied in condensed matter physics. Here we study systematically the charge density wave and superconductivity properties in the solid solutions Zn1-xCuxIr2-yN(N = Al, Ti, Rh)yTe4. Resistivity, magnetic susceptibility and specific heat measurements indicate that the CDW state was suppressed immediately while the superconducting critical temperature (Tc) differs from each system. In the Al- and Ti-substitution cases, Tc increase as y increases and reaches a maximum around 2.75 K and 2.84 K respectively at y = 0.075, followed by a decrease of Tc before the chemical phase boundary is reached at y = 0.2. Nevertheless, Tc decreases monotonously with Rh-do** content y increases and disappears above 0.3 with measuring temperature down to 2 K. Surprisingly, in the Zn1-xCuxIr2Te4 solid solution, Tc enhances as x increases and reaches a maximum value of 2.82 K for x = 0.5 but subsequently survives over the whole do** range of 0.00 - 0.9 despite Tc changes slightly with higher do** content, which differs from the observation of zinc do** suppressing the superconductivity quickly in the high Tc cuprate superconductors. The specific heat anomaly at the superconducting transitions for the representative optimal do** samples are all slightly higher than the BCS value of 1.43 and indicate bulk superconductivity in these compounds. Finally, the CDW transition temperature (TCDW) and superconducting transition temperature (Tc) vs. x/y content phase diagrams of Zn1-xCuxIr2-yN(N = Al, Ti, Rh)yTe4 have been established and compared, which offers good opportunity to study the competition between CDW and superconductivity in the telluride chalcogenides.
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Submitted 23 March, 2020;
originally announced March 2020.
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Hysteretic Mutual Synchronization of PERP-STNO Pairs Analyzed by a Generalized Pendulum-like Model
Authors:
Hao-Hsuan Chen,
Ching-Ming Lee,
Lang Zeng,
Wei-sheng Zhao,
Ching-Ray Chang
Abstract:
At present, the Kuramoto model is the standard and widely accepted theoretical approach for analyzing the synchronization of spin-torque nano-oscillators (STNOs) coupled by an interaction. Nevertheless, the oscillatory decaying regime as well as the initial condition (IC)-dependence (hysteretic) that exist in the synchronization of many types of STNOs cannot be explained by this model. In order to…
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At present, the Kuramoto model is the standard and widely accepted theoretical approach for analyzing the synchronization of spin-torque nano-oscillators (STNOs) coupled by an interaction. Nevertheless, the oscillatory decaying regime as well as the initial condition (IC)-dependence (hysteretic) that exist in the synchronization of many types of STNOs cannot be explained by this model. In order to more precisely elucidate the physical mechanisms behind the two phenomena, in this paper we develop a generalized pendulum-like model based on the two common features of non-linear auto-oscillators: one is the stability of the amplitude/energy of dynamic states; the other is the non-linear dynamic state energy of oscillators. In this new model, we find that the Newtonian-like particle with sufficient kinetic energy can overcome the barrier of phase-locking potential to evolve into a stable asynchronization (AS) state, leading to the (IC)-dependent synchronization. Furthermore, due to the presence of the kinetic energy, this particle can also oscillate around the minima of the phase-locking potential, leading to the oscillatory decaying regime. Thereby, in this work, we adopt this new model to analyze the IC-dependent mutual synchronization of perpendicularto-plane (PERP)-STNO pairs, and then we suggest that the initial conditions can be controlled to avoid such a phenomenon by using magnetic dipolar coupling.
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Submitted 6 May, 2021; v1 submitted 24 March, 2020;
originally announced March 2020.
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Epitaxial Pb on InAs nanowires
Authors:
Thomas Kanne,
Mikelis Marnauza,
Dags Olsteins,
Damon J. Carrad,
Joachim E. Sestoft,
Joeri de Bruijckere,
Lunjie Zeng,
Erik Johnson,
Eva Olsson,
Kasper Grove-Rasmussen,
Jesper Nygård
Abstract:
Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. The challenge is to generate favourable condi…
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Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. The challenge is to generate favourable conditions for heterostructure formation between materials with the desired inherent properties. Here, we harness increased knowledge of metal-on-semiconductor growth to develop InAs nanowires with epitaxially matched, single crystal, atomically flat Pb films along the entire nanowire. These highly ordered heterostructures have a critical temperature of 7 K and a superconducting gap of 1.25 meV, which remains hard at 8.5 T, thereby more than doubling the available parameter space. Additionally, InAs/Pb island devics exhibit magnetic field-driven transitions from Cooper pair to single electron charging; a pre-requisite for use in topological quantum computation. Introducing semiconductor-Pb hybrids potentially enables access to entirely new regimes for an array of quantum systems.
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Submitted 26 February, 2020;
originally announced February 2020.
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One-dimensional gap solitons in quintic and cubic-quintic Fractional nonlinear Schrödinger equations with a periodically modulated linear potential
Authors:
Liangwei Zeng,
Jianhua Zeng
Abstract:
Competing nonlinearities, such as the cubic (Kerr) and quintic nonlinear terms whose strengths are of opposite signs (the coefficients in front of the nonlinearities), exist in various physical media (in particular, in optical and matter-wave media). A benign competition between self-focusing cubic and self-defocusing quintic nonlinear nonlinearities (known as cubic-quintic model) plays an importa…
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Competing nonlinearities, such as the cubic (Kerr) and quintic nonlinear terms whose strengths are of opposite signs (the coefficients in front of the nonlinearities), exist in various physical media (in particular, in optical and matter-wave media). A benign competition between self-focusing cubic and self-defocusing quintic nonlinear nonlinearities (known as cubic-quintic model) plays an important role in creating and stabilizing the self-trap** of D-dimensional localized structures, in the contexts of standard nonlinear Schrödinger equation. We incorporate an external periodic potential (linear lattice) into this model and extend it to the space-fractional scenario that begins to surface in very recent years---the nonlinear fractional Schrödinger equation (NLFSE), therefore obtaining the cubic-quintic or the purely quintic NLFSE, and investigate the propagation and stability properties of self-trapped modes therein. Two types of one-dimensional localized gap modes are found, including the fundamental and dipole-mode gap solitons. Employing the techniques based on the linear-stability analysis and direct numerical simulations, we get the stability regions of all the localized modes; and particularly, the anti-Vakhitov-Kolokolov criterion applies for the stable portions of soliton families generated in the frameworks of quintic-only nonlinearity and competing cubic-quintic nonlinear terms.
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Submitted 21 September, 2019;
originally announced September 2019.
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Gaussian-like and flat-top solitons of atoms with spatially modulated repulsive interactions
Authors:
Liangwei Zeng,
Jianhua Zeng
Abstract:
Solitons, nonlinear particle-like excitations with inalterable properties (amplitude, shape, and velocity) as they propagate, are omnipresent in many branches of science---and in physics in particular. Flat-top solitons are a novel type of bright solitons that have not been well explored in pure nonlinear media. Here, a model of nonlinear Kerr (cubic) media of ultracold atoms with spatially modula…
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Solitons, nonlinear particle-like excitations with inalterable properties (amplitude, shape, and velocity) as they propagate, are omnipresent in many branches of science---and in physics in particular. Flat-top solitons are a novel type of bright solitons that have not been well explored in pure nonlinear media. Here, a model of nonlinear Kerr (cubic) media of ultracold atoms with spatially modulated repulsive interactions is proposed and shown to support a vast variety of stable flat-top matter-wave solitons, including one-dimensional (1D) flat-top fundamental and multipole solitons, two-dimensional (2D) flat-top fundamental and vortex solitons. We demonstrate that by varying the relevant physical parameters (nonlinearity coefficient and chemical potential) the ordinary bright (gaussian) solitons can transform into the novel flat-top solitons. The (in-)stability domains of the flat-top soliton families are checked by means of linear stability analysis and reconfirmed by direct numerical simulations. This model is generic in the contexts of nonlinear optics and Bose-Einstein condensates, which provide direct experimental access to observe the predicted solutions.
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Submitted 21 September, 2019;
originally announced September 2019.
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Gap-type dark localized modes in a Bose-Einstein condensate with optical lattices
Authors:
Liangwei Zeng,
Jianhua Zeng
Abstract:
Bose-Einstein condensate (BEC) exhibits a variety of fascinating and unexpected macroscopic phenomena, and has attracted sustained attention in recent years--particularly in the field of solitons and associated nonlinear phenomena. Meanwhile, optical lattices have emerged as a versatile toolbox for understanding the properties and controlling the dynamics of BEC, among which the realization of bri…
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Bose-Einstein condensate (BEC) exhibits a variety of fascinating and unexpected macroscopic phenomena, and has attracted sustained attention in recent years--particularly in the field of solitons and associated nonlinear phenomena. Meanwhile, optical lattices have emerged as a versatile toolbox for understanding the properties and controlling the dynamics of BEC, among which the realization of bright gap solitons is an iconic result. However, the dark gap solitons are still experimentally unproven, and their properties in more than one dimension remain unknown. In light of this, we describe, numerically and theoretically, the formation and stability properties of gap-type dark localized modes in the context of ultracold atoms trapped in optical lattices. Two kinds of stable dark localized modes--gap solitons and soliton clusters--are predicted in both the one- and two-dimensional geometries. The vortical counterparts of both modes are also constructed in two dimensions. A unique feature is the existence of a nonlinear Bloch-wave background on which all above gap modes are situated. By employing linear-stability analysis and direct simulations, stability regions of the predicted modes are obtained. Our results offer the possibility of observing dark gap localized structures with cutting-edge techniques in ultracold atoms experiments and beyond, including in optics with photonic crystals and lattices.
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Submitted 21 September, 2019;
originally announced September 2019.
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Superconductivity in the Ru-Doped CuIr2Te4 Telluride Chalcogenide
Authors:
Dong Yan,
Lingyong Zeng,
Yishi Lin,
Junjie Yin,
Yuan He,
Xing Zhang,
Meiling Huang,
Meng Wang,
Yihua Wang,
Daoin Yao,
Huixia Luo
Abstract:
Here we report the effect of structural and superconductivity properties on Ru doped CuIr2Te4 telluride chalcogenide. XRD results suggest that the CuIr2-xRuxTe4 maintain the disordered trigonal structure with space group P3m1 (No. 164) for x less than 0.3. The lattice constants, a and c, both decrease with increasing Ru content. Temperature-dependent resistivity, magnetic susceptibility and specif…
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Here we report the effect of structural and superconductivity properties on Ru doped CuIr2Te4 telluride chalcogenide. XRD results suggest that the CuIr2-xRuxTe4 maintain the disordered trigonal structure with space group P3m1 (No. 164) for x less than 0.3. The lattice constants, a and c, both decrease with increasing Ru content. Temperature-dependent resistivity, magnetic susceptibility and specific-heat measurements are performed to characterize the superconducting properties systematically. Our results suggest that the optimal do** level for superconductivity in CuIr2-xRuxTe4 is x = 0.05, where Tc is 2.79 K with the Sommerfeld constant gamma of 11.52 mJ mol-1 K-2 and the specific-heat anomaly at the superconducting transition, is approximately 1.51, which is higher than the BCS value of 1.43, indicating CuIr1.95Ru0.05Te4 is a strongly electron-phonon coupled superconductor. The values of lower critical filed and upper critical field calculated from isothermal magnetization and magneto-transport measurements are 0.98 KOe and 2.47 KOe respectively, signifying that the compound is clearly a type-II superconductor. Finally, a dome-like shape superconducting Tcs vs. x content phase diagram is established, where the charge density wave disappears at x = 0.03 while superconducting transition temperature (Tc) rises until it reaches its peak at x = 0.05, then, with decreasing when x reaches 0.3. This feature of the competition between CDW and the superconductivity could be caused by tuning the Fermi surface and density of states with Ru chemical do**.
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Submitted 25 August, 2019;
originally announced August 2019.
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Frequency Modulation and Voltage Locking of the Voltage Controlled Spin Oscillators (VCSOs)
Authors:
Lang Zeng,
Hao-Hsuan Chen,
Deming Zhang,
Tianqi Gao,
Mingzhi Long,
Youguang Zhang,
Weisheng Zhao
Abstract:
The oscillating frequency of typical Spin Torque Nano Oscillators (STNOs) can be modulated by injected DC current or bias magnetic field. And phase locking of STNOs to an external Radio Frequency (RF) signal can be imposed by AC current or RF bias magnetic field. However, in this study, we have proposed a Voltage Controlled Spin Oscillators (VCSOs) by introducing Voltage Controlled Magnetic Anisot…
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The oscillating frequency of typical Spin Torque Nano Oscillators (STNOs) can be modulated by injected DC current or bias magnetic field. And phase locking of STNOs to an external Radio Frequency (RF) signal can be imposed by AC current or RF bias magnetic field. However, in this study, we have proposed a Voltage Controlled Spin Oscillators (VCSOs) by introducing Voltage Controlled Magnetic Anisotropy (VCMA) effect. The oscillating frequency of VCSOs can be modulated by VCMA voltage as well as injected DC current. Furthermore, we have shown a novel locking mechanism caused by AC VCMA voltage. Both the frequency modulation and voltage locking mechanism are analyzed theoretically by Nonlinear Auto-oscillator theory and verified by numerical simulation. At last, we proposed that by utilizing negative capacitance material to enhance VCMA effect, the locking range for voltage locking can be expanded thus may lead to easy mutual synchronization of multiple VCSOs.
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Submitted 26 July, 2019;
originally announced July 2019.
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Optimizing the $U_{eff}$ value for DFT+U calculation of paramagnetic solid-state NMR shifts by double Fermi-contact-shift verification
Authors:
Y. Liu,
L. Zeng,
C. Xu,
F. Geng,
M. Shen,
Q. Yuan,
B. Hu
Abstract:
The isotropic chemical shifts can be calculated either by full-electron configuration, or by hybrid functionals, which costs a large amount of computational resources. To save the time, DFT+U could be employed to calculate the isotropic chemical shifts. However, the calculated properties are very sensitive to the Hubbard correction value $U_{eff}$. Here the double Fermi-contact-shift verification…
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The isotropic chemical shifts can be calculated either by full-electron configuration, or by hybrid functionals, which costs a large amount of computational resources. To save the time, DFT+U could be employed to calculate the isotropic chemical shifts. However, the calculated properties are very sensitive to the Hubbard correction value $U_{eff}$. Here the double Fermi-contact-shift verification approach with DFT+U method is proposed with much higher computational efficiency, that is, simultaneously calculate the Fermi-contact shifts on two nuclei ($^{6}Li$ and $^{17}O$) to predict the optimal $U_{eff}$. The optimal $U_{eff}$ is also helpful to the calculations of quadrupolar coupling constant $C_{Q}$, $g$-factor, band structure and density of states.
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Submitted 24 July, 2019;
originally announced July 2019.
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A setup for extreme-ultraviolet ultrafast angle-resolved photoelectron spectroscopy at 50-kHz repetition rate
Authors:
Jan Heye Buss,
He Wang,
Yiming Xu,
Julian Maklar,
Frederic Joucken,
Lingkun Zeng,
Sebastian Stoll,
Chris Jozwiak,
John Pepper,
Yi-De Chuang,
Jonathan D. Denlinger,
Zahid Hussain,
Alessandra Lanzara,
Robert A. Kaindl
Abstract:
Time- and angle-resolved photoelectron spectroscopy (trARPES) is a powerful method to track the ultrafast dynamics of quasiparticles and electronic bands in energy and momentum space. We present a setup for trARPES with 22.3 eV extreme-ultraviolet (XUV) femtosecond pulses at 50-kHz repetition rate, which enables fast data acquisition and access to dynamics across momentum space with high sensitivi…
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Time- and angle-resolved photoelectron spectroscopy (trARPES) is a powerful method to track the ultrafast dynamics of quasiparticles and electronic bands in energy and momentum space. We present a setup for trARPES with 22.3 eV extreme-ultraviolet (XUV) femtosecond pulses at 50-kHz repetition rate, which enables fast data acquisition and access to dynamics across momentum space with high sensitivity. The design and operation of the XUV beamline, pump-probe setup, and UHV endstation are described in detail. By characterizing the effect of space-charge broadening, we determine an ultimate source-limited energy resolution of 60 meV, with typically 80-100 meV obtained at 1-2e10 photons/s probe flux on the sample. The instrument capabilities are demonstrated via both equilibrium and time-resolved ARPES studies of transition-metal dichalcogenides. The 50-kHz repetition rate enables sensitive measurements of quasiparticles at low excitation fluences in semiconducting MoSe$_2$, with an instrumental time resolution of 65 fs. Moreover, photo-induced phase transitions can be driven with the available pump fluence, as shown by charge density wave melting in 1T-TiSe$_2$. The high repetition-rate setup thus provides a versatile platform for sensitive XUV trARPES, from quenching of electronic phases down to the perturbative limit.
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Submitted 21 February, 2019; v1 submitted 1 November, 2018;
originally announced November 2018.
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arXiv:1802.01469
[pdf]
physics.optics
cond-mat.mes-hall
cond-mat.mtrl-sci
physics.app-ph
physics.plasm-ph
Losses in plasmonics: from mitigating energy dissipation to embracing loss-enabled functionalities
Authors:
Svetlana V. Boriskina,
Thomas Alan Cooper,
Ling** Zeng,
George Ni,
Jonathan K. Tong,
Yoichiro Tsurimaki,
Yi Huang,
Laureen Meroueh,
Gerald Mahan,
Gang Chen
Abstract:
Unlike conventional optics, plasmonics enables unrivalled concentration of optical energy well beyond the diffraction limit of light. However, a significant part of this energy is dissipated as heat. Plasmonic losses present a major hurdle in the development of plasmonic devices and circuits that can compete with other mature technologies. Until recently, they have largely kept the use of plasmoni…
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Unlike conventional optics, plasmonics enables unrivalled concentration of optical energy well beyond the diffraction limit of light. However, a significant part of this energy is dissipated as heat. Plasmonic losses present a major hurdle in the development of plasmonic devices and circuits that can compete with other mature technologies. Until recently, they have largely kept the use of plasmonics to a few niche areas where loss is not a key factor, such as surface enhanced Raman scattering and biochemical sensing. Here, we discuss the origin of plasmonic losses and various approaches to either minimize or mitigate them based on understanding of fundamental processes underlying surface plasmon modes excitation and decay. Along with the ongoing effort to find and synthesize better plasmonic materials, optical designs that modify the optical powerflow through plasmonic nanostructures can help in reducing both radiative dam** and dissipative losses of surface plasmons. Another strategy relies on the development of hybrid photonic-plasmonic devices by coupling plasmonic nanostructures to resonant optical elements. Hybrid integration not only helps to reduce dissipative losses and radiative dam** of surface plasmons, but also makes possible passive radiative cooling of nano-devices. Finally, we review emerging applications of thermoplasmonics that leverage Ohmic losses to achieve new enhanced functionalities. The most successful commercialized example of a loss-enabled novel application of plasmonics is heat-assisted magnetic recording. Other promising technological directions include thermal emission manipulation, cancer therapy, nanofabrication, nano-manipulation, plasmon-enabled material spectroscopy and thermo-catalysis, and solar water treatment.
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Submitted 5 February, 2018;
originally announced February 2018.
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Unifying first principle theoretical predictions and experimental measurements of size effects on thermal transport in SiGe alloys
Authors:
Samuel Huberman,
Vazrik Chiloyan,
Ryan A. Duncan,
Ling** Zeng,
Roger Jia,
Alexei A. Maznev,
Eugene A. Fitzgerald,
Keith A. Nelson,
Gang Chen
Abstract:
In this work, we demonstrate the correspondence between first principle calculations and experimental measurements of size effects on thermal transport in SiGe alloys. Transient thermal grating (TTG) is used to measure the effective thermal conductivity. The virtual crystal approximation under the density functional theory (DFT) framework combined with impurity scattering is used to determine the…
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In this work, we demonstrate the correspondence between first principle calculations and experimental measurements of size effects on thermal transport in SiGe alloys. Transient thermal grating (TTG) is used to measure the effective thermal conductivity. The virtual crystal approximation under the density functional theory (DFT) framework combined with impurity scattering is used to determine the phonon properties for the exact alloy composition of the measured samples. With these properties, classical size effects are calculated for the experimental geometry of reflection mode TTG using the recently-developed variational solution to the phonon Boltzmann transport equation (BTE), which is verified against established Monte Carlo simulations. We find agreement between theoretical predictions and experimental measurements in the reduction of thermal conductivity (as much as $\sim$ 25\% of the bulk value) across grating periods spanning one order of magnitude. This work provides a framework for the tabletop study of size effects on thermal transport.
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Submitted 4 July, 2017; v1 submitted 5 April, 2017;
originally announced April 2017.
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Evidence of topological insulator state in the semimetal LaBi
Authors:
R. Lou,
B. -B. Fu,
Q. N. Xu,
P. -J. Guo,
L. -Y. Kong,
L. -K. Zeng,
J. -Z. Ma,
P. Richard,
C. Fang,
Y. -B. Huang,
S. -S. Sun,
Q. Wang,
L. Wang,
Y. -G. Shi,
H. C. Lei,
K. Liu,
H. M. Weng,
T. Qian,
H. Ding,
S. -C. Wang
Abstract:
By employing angle-resolved photoemission spectroscopy combined with first-principles calculations, we performed a systematic investigation on the electronic structure of LaBi, which exhibits extremely large magnetoresistance (XMR), and is theoretically predicted to possess band anticrossing with nontrivial topological properties. Here, the observations of the Fermi-surface topology and band dispe…
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By employing angle-resolved photoemission spectroscopy combined with first-principles calculations, we performed a systematic investigation on the electronic structure of LaBi, which exhibits extremely large magnetoresistance (XMR), and is theoretically predicted to possess band anticrossing with nontrivial topological properties. Here, the observations of the Fermi-surface topology and band dispersions are similar to previous studies on LaSb [Phys. Rev. Lett. 117, 127204 (2016)], a topologically trivial XMR semimetal, except the existence of a band inversion along the $Γ$-$X$ direction, with one massless and one gapped Dirac-like surface state at the $X$ and $Γ$ points, respectively. The odd number of massless Dirac cones suggests that LaBi is analogous to the time-reversal $Z_2$ nontrivial topological insulator. These findings open up a new series for exploring novel topological states and investigating their evolution from the perspective of topological phase transition within the family of rare-earth monopnictides.
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Submitted 23 March, 2017; v1 submitted 12 December, 2016;
originally announced December 2016.
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Amplicification of Voltage Controlled Magnetic Anisotropy Effect with Negative Capacitance
Authors:
Lang Zeng,
Tianqi Gao,
Deming Zhang,
Shouzhong Peng,
Fanghui Gong,
Xiaowan Qin,
Mingzhi Long,
Youguang Zhang,
Weisheng Zhao
Abstract:
The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic Random Access Memory (STT-MRAM) to mass market. By utilizing Voltage Controlled Magnetic Anisotropy (VCMA) effect, the MTJ can be switched by voltage effect and is…
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The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic Random Access Memory (STT-MRAM) to mass market. By utilizing Voltage Controlled Magnetic Anisotropy (VCMA) effect, the MTJ can be switched by voltage effect and is postulated to achieve ultra-low power (fJ). However, the VCMA coefficient measured in experiments is far too small for MTJ dimension below 100 nm. Here in this work, a novel approach for the amplification of VCMA effect which borrow ideas from negative capacitance is proposed. The feasibility of the proposal is proved by physical simulation and in-depth analysis.
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Submitted 31 October, 2016;
originally announced October 2016.
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Thermal Conductivity of GaAs/Ge Nanostructures
Authors:
Roger Jia,
Ling** Zeng,
Gang Chen,
Eugene A. Fitzgerald
Abstract:
Superlattices are promising low-dimensional nanomaterials for thermoelectric technology that is capable of directly converting low-grade heat energy to useful electrical power. In this work, the thermal conductivities of GaAs/Ge superlattice nanostructures were investigated systematically in relation to their morphologies and interfaces. Thermal conductivities were measured using ultrafast time-do…
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Superlattices are promising low-dimensional nanomaterials for thermoelectric technology that is capable of directly converting low-grade heat energy to useful electrical power. In this work, the thermal conductivities of GaAs/Ge superlattice nanostructures were investigated systematically in relation to their morphologies and interfaces. Thermal conductivities were measured using ultrafast time-domain thermoreflectance and were found to decrease with increasing interface densities, consistent with our understanding of microscopic phonon transport in the particle regime. Lower thermal conductivities were observed in (GaAs)0.77(Ge2)0.23 alloys; transmission electron microscopy study reveals phase separation in the alloys. These alloys can be interpreted as fine nanostructures, with length scales comparable to the periods of very thin superlattices. Our experimental findings help gain fundamental insight into nanoscale thermal transport in superlattices and are also useful for future improvement of thermoelectric performance using superlattice nanostructures.
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Submitted 6 October, 2016;
originally announced October 2016.
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Thermal transport in suspended silicon membranes measured by laser-induced transient gratings
Authors:
Alejandro Vega-Flick,
Ryan A. Duncan,
Jeffrey K. Eliason,
John Cuffe,
Jeremy A. Johnson,
Jean-Philippe M. Peraud,
Ling** Zeng,
Zhengmao Lu,
Alexei A. Maznev,
Evelyn N. Wang,
Juan Jose Alvarado-Gil,
Marianna Sledzinska,
Clivia Sotomayor-Torres,
Gang Chen,
Keith A. Nelson
Abstract:
Studying thermal transport at the nanoscale poses formidable experimental challenges due both to the physics of the measurement process and to the issues of accuracy and reproducibility. The laser-induced transient thermal grating (TTG) technique permits non-contact measurements on nanostructured samples without a need for metal heaters or any other extraneous structures, offering the advantage of…
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Studying thermal transport at the nanoscale poses formidable experimental challenges due both to the physics of the measurement process and to the issues of accuracy and reproducibility. The laser-induced transient thermal grating (TTG) technique permits non-contact measurements on nanostructured samples without a need for metal heaters or any other extraneous structures, offering the advantage of inherently high absolute accuracy. We present a review of recent studies of thermal transport in nanoscale silicon membranes using the TTG technique. An overview of the methodology, including an analysis of measurements errors, is followed by a discussion of new findings obtained from measurements on both solid and nanopatterned membranes. The most important results have been a direct observation of non-diffusive phonon-mediated transport at room temperature and measurements of thickness-dependent thermal conductivity of suspended membranes across a wide thickness range, showing good agreement with first-principles-based theory assuming diffuse scattering at the boundaries. Measurements on a membrane with a periodic pattern of nanosized holes indicated fully diffusive transport and yielded thermal diffusivity values in agreement with Monte Carlo simulations. Based on the results obtained to-date, we conclude that room-temperature thermal transport in membranebased silicon nanostructures is now reasonably well understood.
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Submitted 29 October, 2016; v1 submitted 5 October, 2016;
originally announced October 2016.