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Macroscopic uniform 2D moiré superlattices with controllable angles
Authors:
Gregory Zaborski Jr.,
Paulina E. Majchrzak,
Samuel Lai,
Amalya C. Johnson,
Ashley P. Saunders,
Ziyan Zhu,
Yujun Deng,
Donghui Lu,
Makoto Hashimoto,
Z-X Shen,
Fang Liu
Abstract:
Moiré superlattices, engineered through precise stacking of van der Waals (vdW) layers, hold immense promise for exploring strongly correlated and topological phenomena. However, these applications have been held back by the common preparation method: tear-and-stack of Scotch tape exfoliated monolayers. It has low efficiency and reproducibility, along with challenges of twist angle inhomogeneity,…
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Moiré superlattices, engineered through precise stacking of van der Waals (vdW) layers, hold immense promise for exploring strongly correlated and topological phenomena. However, these applications have been held back by the common preparation method: tear-and-stack of Scotch tape exfoliated monolayers. It has low efficiency and reproducibility, along with challenges of twist angle inhomogeneity, interfacial contamination, micrometer sizes, and a tendency to untwist at elevated temperatures. Here we report an effective strategy to construct highly consistent vdW moiré structures with high production throughput, near-unity yield, pristine interfaces, precisely controlled twist angles, and macroscopic scale (up to centimeters) with enhanced thermal stability. We further demonstrate the versatility across various vdW materials including transition metal dichalcogenides, graphene, and hBN. The expansive size and high quality of moiré structures enables high-resolution map** of the reciprocal space back-folded lattices and moiré mini band structures with low energy electron diffraction (LEED) and angle-resolved photoemission spectroscopy (ARPES). This technique will have broad applications in both fundamental studies and mass production of twistronic devices.
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Submitted 2 July, 2024;
originally announced July 2024.
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Deterministic fabrication of graphene hexagonal boron nitride moiré superlattices
Authors:
Rupini V. Kamat,
Aaron L. Sharpe,
Mihir Pendharkar,
Jenny Hu,
Steven J. Tran,
Gregory Zaborski Jr.,
Marisa Hocking,
Joe Finney,
Kenji Watanabe,
Takashi Taniguchi,
Marc A. Kastner,
Andrew J. Mannix,
Tony Heinz,
David Goldhaber-Gordon
Abstract:
The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided the first experimental observation of orbital fe…
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The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided the first experimental observation of orbital ferromagnetism. To create samples with aligned graphene/hBN, researchers often align edges of exfoliated flakes that appear straight in optical micrographs. However, graphene or hBN can cleave along either zig-zag or armchair lattice directions, introducing a 30 degree ambiguity in the relative orientation of two flakes. By characterizing the crystal lattice orientation of exfoliated flakes prior to stacking using Raman and second-harmonic generation for graphene and hBN, respectively, we unambiguously align monolayer graphene to hBN at a near-0 degree, not 30 degree, relative twist angle. We confirm this alignment by torsional force microscopy (TFM) of the graphene/hBN moiré on an open-face stack, and then by cryogenic transport measurements, after full encapsulation with a second, non-aligned hBN layer. This work demonstrates a key step toward systematically exploring the effects of the relative twist angle between dissimilar materials within moiré heterostructures.
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Submitted 28 May, 2024;
originally announced May 2024.
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Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition
Authors:
Zhepeng Zhang,
Lauren Hoang,
Marisa Hocking,
Jenny Hu,
Gregory Zaborski Jr.,
Pooja Reddy,
Johnny Dollard,
David Goldhaber-Gordon,
Tony F. Heinz,
Eric Pop,
Andrew J. Mannix
Abstract:
Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, do**, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly cry…
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Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, do**, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled do**. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS$_2$ growth with tunable morphologies - from separated single-crystal domains to continuous monolayer films - on a variety of substrates, including sapphire, SiO$_2$, and Au. These WS$_2$ films exhibit narrow neutral exciton photoluminescence linewidths down to 33 meV and room-temperature mobility up to 34 - 36 cm$^2$V$^-$$^1$s$^-$$^1$). Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS$_2$, MoxW$_1$$_-$$_x$S$_2$ alloys, and in-plane WS$_2$-MoS$_2$ heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale.
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Submitted 6 March, 2024;
originally announced March 2024.
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Torsional Force Microscopy of Van der Waals Moirés and Atomic Lattices
Authors:
Mihir Pendharkar,
Steven J. Tran,
Gregory Zaborski Jr.,
Joe Finney,
Aaron L. Sharpe,
Rupini V. Kamat,
Sandesh S. Kalantre,
Marisa Hocking,
Nathan J. Bittner,
Kenji Watanabe,
Takashi Taniguchi,
Bede Pittenger,
Christina J. Newcomb,
Marc A. Kastner,
Andrew J. Mannix,
David Goldhaber-Gordon
Abstract:
In a stack of atomically-thin Van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle of even hundredths of a degree can dramatically transform the system's electronic properties. Setting a precise and uniform twist angle for a stack remains difficult, hence determining that twist angle and map** its s…
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In a stack of atomically-thin Van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle of even hundredths of a degree can dramatically transform the system's electronic properties. Setting a precise and uniform twist angle for a stack remains difficult, hence determining that twist angle and map** its spatial variation is very important. Techniques have emerged to do this by imaging the moiré, but most of these require sophisticated infrastructure, time-consuming sample preparation beyond stack synthesis, or both. In this work, we show that Torsional Force Microscopy (TFM), a scanning probe technique sensitive to dynamic friction, can reveal surface and shallow subsurface structure of Van der Waals stacks on multiple length scales: the moirés formed between bi-layers of graphene and between graphene and hexagonal boron nitride (hBN), and also the atomic crystal lattices of graphene and hBN. In TFM, torsional motion of an AFM cantilever is monitored as it is actively driven at a torsional resonance while a feedback loop maintains contact at a set force with the sample surface. TFM works at room temperature in air, with no need for an electrical bias between the tip and the sample, making it applicable to a wide array of samples. It should enable determination of precise structural information including twist angles and strain in moiré superlattices and crystallographic orientation of VdW flakes to support predictable moiré heterostructure fabrication.
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Submitted 20 December, 2023; v1 submitted 17 August, 2023;
originally announced August 2023.
