Ultrastrong coupling of a single artificial atom to an electromagnetic continuum in the nonperturbative regime
Authors:
P. Forn-Díaz,
J. J. García-Ripoll,
B. Peropadre,
M. A. Yurtalan,
J. -L. Orgiazzi,
R. Belyansky,
C. M. Wilson,
A. Lupascu
Abstract:
The study of light-matter interaction has led to many fundamental discoveries as well as numerous important technologies. Over the last decades, great strides have been made in increasing the strength of this interaction at the single-photon level, leading to a continual exploration of new physics and applications. Recently, a major achievement has been the demonstration of the so-called strong co…
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The study of light-matter interaction has led to many fundamental discoveries as well as numerous important technologies. Over the last decades, great strides have been made in increasing the strength of this interaction at the single-photon level, leading to a continual exploration of new physics and applications. Recently, a major achievement has been the demonstration of the so-called strong coupling regime, a key advancement enabling great progress in quantum information science. Here, we demonstrate light-matter interaction over an order of magnitude stronger than previously reported, reaching the nonperturbative regime of ultrastrong coupling (USC). We achieve this using a superconducting artificial atom tunably coupled to the electromagnetic continuum of a one-dimensional waveguide. For the largest coupling, the spontaneous emission rate of the atom exceeds its transition frequency. In this USC regime, the description of atom and light as distinct entities breaks down, and a new description in terms of hybrid states is required. Our results open the door to a wealth of new physics and applications. Beyond light-matter interaction itself, the tunability of our system makes it a promising tool to study a number of important physical systems such as the well-known spin-boson and Kondo models.
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Submitted 13 April, 2017; v1 submitted 1 February, 2016;
originally announced February 2016.
Suspended graphene devices with local gate control on an insulating substrate
Authors:
Florian R. Ong,
Zheng Cui,
Muhammet A. Yurtalan,
Cameron Vojvodin,
Michał Papaj,
Jean-Luc F. X. Orgiazzi,
Chunqing Deng,
Mustafa Bal,
Adrian Lupascu
Abstract:
We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77~K and below, we observe the field-effect modulation of the graphene resistivi…
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We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77~K and below, we observe the field-effect modulation of the graphene resistivity by a voltage applied to the gate. This fabrication approach enables new experiments involving graphene-based superconducting qubits and nano-electromechanical resonators. The method is applicable to other two-dimensional materials.
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Submitted 18 September, 2015; v1 submitted 13 March, 2015;
originally announced March 2015.
