Showing 1–47 of 47 results for author: Yun, J

Vortex confinement through an unquantized magnetic flux

Authors: Geunyong Kim, **young Yun, **ho Yang, Ilkyu Yang, Dirk Wulferding, Roman Movshovich, Gil Young Cho, Ki-Seok Kim, Garam Hahn, Jeehoon Kim

Abstract: Geometrically confined superconductors often experience a breakdown in the quantization of magnetic flux owing to the incomplete screening of the supercurrent against the field penetration. In this study, we report that the confinement of a magnetic field occurs regardless of the dimensionality of the system, extending even to 1D linear potential systems. By utilizing a vector-field magnetic force… ▽ More Geometrically confined superconductors often experience a breakdown in the quantization of magnetic flux owing to the incomplete screening of the supercurrent against the field penetration. In this study, we report that the confinement of a magnetic field occurs regardless of the dimensionality of the system, extending even to 1D linear potential systems. By utilizing a vector-field magnetic force microscope, we successfully create a vortex-antivortex pair connected by a 1D unquantized magnetic flux in ultra-thin superconducting films. Through an investigation of the manipulation and thermal behavior of the vortex pair, we uncover a long-range interaction mediated by the unquantized magnetic flux. These findings suggest a universal phenomenon of unquantized magnetic flux formation, independent of the geometry of the system. Our results present an experimental route for probing the impact of confinement on superconducting properties and order parameters in unconventional superconductors characterized by extremely low dimensionality. △ Less

Submitted 1 July, 2024; originally announced July 2024.

Double-sided van der Waals epitaxy of topological insulators across an atomically thin membrane

Authors: Joon Young Park, Young Jae Shin, Jeacheol Shin, Jehyun Kim, Janghyun Jo, Hyobin Yoo, Danial Haei, Chohee Hyun, Jiyoung Yun, Robert M. Huber, Arijit Gupta, Kenji Watanabe, Takashi Taniguchi, Wan Kyu Park, Hyeon Suk Shin, Miyoung Kim, Dohun Kim, Gyu-Chul Yi, Philip Kim

Abstract: Atomically thin van der Waals (vdW) films provide a novel material platform for epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional (2D) material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here, we report the double-sided epitaxy of vdW layered materi… ▽ More Atomically thin van der Waals (vdW) films provide a novel material platform for epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional (2D) material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here, we report the double-sided epitaxy of vdW layered materials through atomic membranes. We grow vdW topological insulators (TIs) Sb$_2$Te$_3$ and Bi$_2$Se$_3$ by molecular beam epitaxy on both surfaces of atomically thin graphene or hBN, which serve as suspended 2D vdW "$\textit{substrate}$" layers. Both homo- and hetero- double-sided vdW TI tunnel junctions are fabricated, with the atomically thin hBN acting as a crystal-momentum-conserving tunnelling barrier with abrupt and epitaxial interface. By performing field-angle dependent magneto-tunnelling spectroscopy on these devices, we reveal the energy-momentum-spin resonant tunnelling of massless Dirac electrons between helical Landau levels developed in the topological surface states at the interface. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Comments: 24 pages, 4 main figures, 7 extended data figures

Universal high-fidelity quantum gates for spin-qubits in diamond

Authors: H. P. Bartling, J. Yun, K. N. Schymik, M. van Riggelen, L. A. Enthoven, H. B. van Ommen, M. Babaie, F. Sebastiano, M. Markham, D. J. Twitchen, T. H. Taminiau

Abstract: Spins associated to solid-state colour centers are a promising platform for investigating quantum computation and quantum networks. Recent experiments have demonstrated multi-qubit quantum processors, optical interconnects, and basic quantum error correction protocols. One of the key open challenges towards larger-scale systems is to realize high-fidelity universal quantum gates. In this work, we… ▽ More Spins associated to solid-state colour centers are a promising platform for investigating quantum computation and quantum networks. Recent experiments have demonstrated multi-qubit quantum processors, optical interconnects, and basic quantum error correction protocols. One of the key open challenges towards larger-scale systems is to realize high-fidelity universal quantum gates. In this work, we design and demonstrate a complete high-fidelity gate set for the two-qubit system formed by the electron and nuclear spin of a nitrogen-vacancy center in diamond. We use gate set tomography (GST) to systematically optimise the gates and demonstrate single-qubit gate fidelities of up to $99.999(1)\%$ and a two-qubit gate fidelity of $99.93(5) \%$. Our gates are designed to decouple unwanted interactions and can be extended to other electron-nuclear spin systems. The high fidelities demonstrated provide new opportunities towards larger-scale quantum processing with colour-center qubits. △ Less

Submitted 15 March, 2024; originally announced March 2024.

Denoising diffusion-based synthetic generation of three-dimensional (3D) anisotropic microstructures from two-dimensional (2D) micrographs

Authors: Kang-Hyun Lee, Gun ** Yun

Abstract: Integrated computational materials engineering (ICME) has significantly enhanced the systemic analysis of the relationship between microstructure and material properties, paving the way for the development of high-performance materials. However, analyzing microstructure-sensitive material behavior remains challenging due to the scarcity of three-dimensional (3D) microstructure datasets. Moreover,… ▽ More Integrated computational materials engineering (ICME) has significantly enhanced the systemic analysis of the relationship between microstructure and material properties, paving the way for the development of high-performance materials. However, analyzing microstructure-sensitive material behavior remains challenging due to the scarcity of three-dimensional (3D) microstructure datasets. Moreover, this challenge is amplified if the microstructure is anisotropic, as this results in anisotropic material properties as well. In this paper, we present a framework for reconstruction of anisotropic microstructures solely based on two-dimensional (2D) micrographs using conditional diffusion-based generative models (DGMs). The proposed framework involves spatial connection of multiple 2D conditional DGMs, each trained to generate 2D microstructure samples for three different orthogonal planes. The connected multiple reverse diffusion processes then enable effective modeling of a Markov chain for transforming noise into a 3D microstructure sample. Furthermore, a modified harmonized sampling is employed to enhance the sample quality while preserving the spatial connection between the slices of anisotropic microstructure samples in 3D space. To validate the proposed framework, the 2D-to-3D reconstructed anisotropic microstructure samples are evaluated in terms of both the spatial correlation function and the physical material behavior. The results demonstrate that the framework is capable of reproducing not only the statistical distribution of material phases but also the material properties in 3D space. This highlights the potential application of the proposed 2D-to-3D reconstruction framework in establishing microstructure-property linkages, which could aid high-throughput material design for future studies △ Less

Submitted 12 December, 2023; originally announced December 2023.

Roadmap on Photovoltaic Absorber Materials for Sustainable Energy Conversion

Authors: James C. Blakesley, Ruy S. Bonilla, Marina Freitag, Alex M. Ganose, Nicola Gasparini, Pascal Kaienburg, George Koutsourakis, Jonathan D. Major, Jenny Nelson, Nakita K. Noel, Bart Roose, Jae Sung Yun, Simon Aliwell, Pietro P. Altermatt, Tayebeh Ameri, Virgil Andrei, Ardalan Armin, Diego Bagnis, Jenny Baker, Hamish Beath, Mathieu Bellanger, Philippe Berrouard, Jochen Blumberger, Stuart A. Boden, Hugo Bronstein , et al. (61 additional authors not shown)

Abstract: Photovoltaics (PVs) are a critical technology for curbing growing levels of anthropogenic greenhouse gas emissions, and meeting increases in future demand for low-carbon electricity. In order to fulfil ambitions for net-zero carbon dioxide equivalent (CO₂eq) emissions worldwide, the global cumulative capacity of solar PVs must increase by an order of magnitude from 0.9 TWp in 2021 to 8.… ▽ More Photovoltaics (PVs) are a critical technology for curbing growing levels of anthropogenic greenhouse gas emissions, and meeting increases in future demand for low-carbon electricity. In order to fulfil ambitions for net-zero carbon dioxide equivalent (CO₂eq) emissions worldwide, the global cumulative capacity of solar PVs must increase by an order of magnitude from 0.9 TWp in 2021 to 8.5 TWp by 2050 according to the International Renewable Energy Agency, which is considered to be a highly conservative estimate. In 2020, the Henry Royce Institute brought together the UK PV community to discuss the critical technological and infrastructure challenges that need to be overcome to address the vast challenges in accelerating PV deployment. Herein, we examine the key developments in the global community, especially the progress made in the field since this earlier roadmap, bringing together experts primarily from the UK across the breadth of the photovoltaics community. The focus is both on the challenges in improving the efficiency, stability and levelized cost of electricity of current technologies for utility-scale PVs, as well as the fundamental questions in novel technologies that can have a significant impact on emerging markets, such as indoor PVs, space PVs, and agrivoltaics. We discuss challenges in advanced metrology and computational tools, as well as the growing synergies between PVs and solar fuels, and offer a perspective on the environmental sustainability of the PV industry. Through this roadmap, we emphasize promising pathways forward in both the short- and long-term, and for communities working on technologies across a range of maturity levels to learn from each other. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Comments: 160 pages, 21 figures

Coherence of a field-gradient-driven singlet-triplet qubit coupled to many-electron spin states in 28Si/SiGe

Authors: Younguk Song, Jonginn Yun, Jehyun Kim, Won** Jang, Hyeongyu Jang, Jaemin Park, Min-Kyun Cho, Hanseo Sohn, Noritaka Usami, Satoru Miyamoto, Kohei M. Itoh, Dohun Kim

Abstract: Engineered spin-electric coupling enables spin qubits in semiconductor nanostructures to be manipulated efficiently and addressed individually. While synthetic spin-orbit coupling using a micromagnet is widely used for driving qubits based on single spins in silicon, corresponding demonstration for encoded spin qubits is so far limited to natural silicon. Here, we demonstrate fast singlet-triplet… ▽ More Engineered spin-electric coupling enables spin qubits in semiconductor nanostructures to be manipulated efficiently and addressed individually. While synthetic spin-orbit coupling using a micromagnet is widely used for driving qubits based on single spins in silicon, corresponding demonstration for encoded spin qubits is so far limited to natural silicon. Here, we demonstrate fast singlet-triplet qubit oscillation (~100 MHz) in a gate-defined double quantum dot in $^{28}$Si/SiGe with an on-chip micromagnet with which we show the oscillation quality factor of an encoded spin qubit exceeding 580. The coherence time $\textit{T}_{2}$* is analyzed as a function of potential detuning and an external magnetic field. In weak magnetic fields, the coherence is limited by fast noise compared to the data acquisition time, which limits $\textit{T}_{2}$* < 1 $μ$s in the ergodic limit. We present evidence of sizable and coherent coupling of the qubit with the spin states of a nearby quantum dot, demonstrating that appropriate spin-electric coupling may enable a charge-based two-qubit gate in a (1,1) charge configuration. △ Less

Submitted 25 October, 2023; v1 submitted 19 October, 2023; originally announced October 2023.

Multi-plane denoising diffusion-based dimensionality expansion for 2D-to-3D reconstruction of microstructures with harmonized sampling

Authors: Kang-Hyun Lee, Gun ** Yun

Abstract: Acquiring reliable microstructure datasets is a pivotal step toward the systematic design of materials with the aid of integrated computational materials engineering (ICME) approaches. However, obtaining three-dimensional (3D) microstructure datasets is often challenging due to high experimental costs or technical limitations, while acquiring two-dimensional (2D) micrographs is comparatively easie… ▽ More Acquiring reliable microstructure datasets is a pivotal step toward the systematic design of materials with the aid of integrated computational materials engineering (ICME) approaches. However, obtaining three-dimensional (3D) microstructure datasets is often challenging due to high experimental costs or technical limitations, while acquiring two-dimensional (2D) micrographs is comparatively easier. To deal with this issue, this study proposes a novel framework for 2D-to-3D reconstruction of microstructures called Micro3Diff using diffusion-based generative models (DGMs). Specifically, this approach solely requires pre-trained DGMs for the generation of 2D samples, and dimensionality expansion (2D-to-3D) takes place only during the generation process (i.e., reverse diffusion process). The proposed framework incorporates a new concept referred to as multi-plane denoising diffusion, which transforms noisy samples (i.e., latent variables) from different planes into the data structure while maintaining spatial connectivity in 3D space. Furthermore, a harmonized sampling process is developed to address possible deviations from the reverse Markov chain of DGMs during the dimensionality expansion. Combined, we demonstrate the feasibility of Micro3Diff in reconstructing 3D samples with connected slices that maintain morphologically equivalence to the original 2D images. To validate the performance of Micro3Diff, various types of microstructures (synthetic and experimentally observed) are reconstructed, and the quality of the generated samples is assessed both qualitatively and quantitatively. The successful reconstruction outcomes inspire the potential utilization of Micro3Diff in upcoming ICME applications while achieving a breakthrough in comprehending and manipulating the latent space of DGMs. △ Less

Submitted 23 September, 2023; v1 submitted 27 August, 2023; originally announced August 2023.

Autonomous synthesis of thin film materials with pulsed laser deposition enabled by in situ spectroscopy and automation

Authors: Sumner B. Harris, Arpan Biswas, Seok Joon Yun, Christopher M. Rouleau, Alexander A. Puretzky, Rama K. Vasudevan, David B. Geohegan, Kai Xiao

Abstract: Synthesis of thin films has traditionally relied upon slow, sequential processes carried out with substantial human intervention, frequently utilizing a mix of experience and serendipity to optimize material structure and properties. With recent advances in autonomous systems which combine synthesis, characterization, and decision making with artificial intelligence (AI), large parameter spaces ca… ▽ More Synthesis of thin films has traditionally relied upon slow, sequential processes carried out with substantial human intervention, frequently utilizing a mix of experience and serendipity to optimize material structure and properties. With recent advances in autonomous systems which combine synthesis, characterization, and decision making with artificial intelligence (AI), large parameter spaces can be explored autonomously at rates beyond what is possible by human experimentalists, greatly accelerating discovery, optimization, and understanding in materials synthesis which directly address the grand challenges in synthesis science. Here, we demonstrate autonomous synthesis of a contemporary 2D material by combining the highly versatile pulsed laser deposition (PLD) technique with automation and machine learning (ML). We incorporated in situ and real-time spectroscopy, a high-throughput methodology, and cloud connectivity to enable autonomous synthesis workflows with PLD. Ultrathin WSe2 films were grown using co-ablation of two targets and showed a 10x increase in throughput over traditional PLD workflows. Gaussian process regression and Bayesian optimization were used with in situ Raman spectroscopy to autonomously discover two distinct growth windows and the process-property relationship after sampling only 0.25% of a large 4D parameter space. Any material that can be grown with PLD could be autonomously synthesized with our platform and workflows, enabling accelerated discovery and optimization of a vast number of materials. △ Less

Submitted 16 August, 2023; originally announced August 2023.

A Data-Driven Framework for Designing Microstructure of Multifunctional Composites with Deep-Learned Diffusion-Based Generative Models

Authors: Kang-Hyun Lee, Hyoung Jun Lim, Gun ** Yun

Abstract: This paper puts forward an integrated microstructure design methodology that replaces the common existing design approaches: 1) reconstruction of microstructures, 2) analyzing and quantifying material properties, and 3) inverse design of materials using deep-learned generative and surrogate models. The long-standing issue of microstructure reconstruction is well addressed in this study using a new… ▽ More This paper puts forward an integrated microstructure design methodology that replaces the common existing design approaches: 1) reconstruction of microstructures, 2) analyzing and quantifying material properties, and 3) inverse design of materials using deep-learned generative and surrogate models. The long-standing issue of microstructure reconstruction is well addressed in this study using a new class of state-of-the-art generative model, the diffusion-based generative model (DGM). Moreover, the conditional formulation of DGM for guidance to the embedded desired material properties with a transformer-based attention mechanism enables the inverse design of multifunctional composites. A convolutional neural network (CNN)-based surrogate model is utilized to analyze the nonlinear material behavior to facilitate the prediction of material properties for building microstructure-property linkages. Combined, these generative and surrogate models enable large data processing and database construction that is often not affordable with resource-intensive finite element method (FEM)-based direct numerical simulation (DNS) and iterative reconstruction methods. An example case is presented to demonstrate the effectiveness of the proposed approach, which is designing mechanoluminescence (ML) particulate composites made of europium and dysprosium ions. The results show that the inversely-designed multiple ML microstructure candidates with the proposed generative and surrogate models meet the multiple design requirements (e.g., volume fraction, elastic constant, and light sensitivity). The evaluation of the generated samples' quality and the surrogate models' performance using appropriate metrics are also included. This assessment demonstrates that the proposed integrated methodology offers an end-to-end solution for practical material design applications. △ Less

Submitted 14 July, 2023; v1 submitted 21 January, 2023; originally announced January 2023.

Superfluid-like spin transport in the dynamic states of easy-axis magnets

Authors: Jongpil Yun, Se Kwon Kim

Abstract: The existing proposals for superfluid-like spin transport have been based on easy-plane magnets where the U(1) spin-rotational symmetry is spontaneously broken in equilibrium, and this has been limiting material choices for realizing superfluid-like spin transport to restricted class of magnets. In this work, we lift this limitation by showing that superfluid-like spin transport can also be realiz… ▽ More The existing proposals for superfluid-like spin transport have been based on easy-plane magnets where the U(1) spin-rotational symmetry is spontaneously broken in equilibrium, and this has been limiting material choices for realizing superfluid-like spin transport to restricted class of magnets. In this work, we lift this limitation by showing that superfluid-like spin transport can also be realized based on easy-axis magnets, where the U(1) spin-rotational symmetry is intact in equilibrium but can be broken in non-equilibrium. Specifically, we find the condition to engender a non-equilibrium easy-cone state by applying a spin torque to easy-axis magnets, which dynamically induces the spontaneous breaking of the U(1) spin-rotational symmetry and thereby can support superfluid-like spin transport. By exploiting this dynamic easy-cone state, we show theoretically that superfluid-like spin transport can be achieved in easy-axis magnets under suitable conditions and confirmed the prediction by micromagnetic simulations. We envision that our work broadens material library for realizing superfluid-like spin transport, showing the potential utility of dynamic states of magnets as venue to look for spin-transport phenomena that do not occur in static magnetic backgrounds. △ Less

Submitted 28 November, 2022; originally announced November 2022.

Comments: 7 pages and 2 figures

Microstructure reconstruction using diffusion-based generative models

Authors: Kang-Hyun Lee, Gun ** Yun

Abstract: Microstructure reconstruction has been an essential part of computational material engineering to reveal the relationship between microstructures and material properties. However, finding a general solution for microstructure characterization and reconstruction (MCR) tasks is still challenging, although there have been many attempts such as the descriptor-based MCR methods. To address this general… ▽ More Microstructure reconstruction has been an essential part of computational material engineering to reveal the relationship between microstructures and material properties. However, finding a general solution for microstructure characterization and reconstruction (MCR) tasks is still challenging, although there have been many attempts such as the descriptor-based MCR methods. To address this generality problem, the denoising diffusion models are first employed for the microstructure reconstruction task in this study. The applicability of the diffusion-based models is validated with several types of microstructures (e.g., polycrystalline alloy, carbonate, ceramics, copolymer, fiber composite, etc.) that have different morphological characteristics. The quality of the generated images is assessed with the quantitative evaluation metrics (FID score, precision, and recall) and the conventional statistical microstructure descriptors. Furthermore, the formulation of implicit probabilistic models (which yields non-Markovian diffusion processes) is adopted to accelerate the sampling process, thereby controlling the computational cost considering the practicability and reliability. The results show that the denoising diffusion models are well applicable to the reconstruction of various types of microstructures with different spatial distributions and morphological features. The diffusion-based approach provides a stable training process with simple implementation for generating visually similar and statistically equivalent microstructures. In these regards, the diffusion model has great potential to be used as a universal microstructure reconstruction method for handling complex microstructures for materials science. △ Less

Submitted 22 January, 2023; v1 submitted 20 November, 2022; originally announced November 2022.

Probing two-qubit capacitive interactions beyond bilinear regime using dual Hamiltonian parameter estimations

Authors: Jonginn Yun, Jaemin Park, Hyeongyu Jang, Jehyun Kim, Won** Jang, Youngwook Song, Min-Kyun Cho, Hanseo Sohn, Hwanchul Jung, Vladimir Umansky, Dohun Kim

Abstract: We report the simultaneous operation and two-qubit coupling measurement of a pair of two-electron spin qubits that are actively decoupled from quasistatic nuclear noise in a GaAs quadruple quantum dot array. Coherent Rabi oscillations of both qubits (decay time $\approx$2 μs; frequency few MHz) are achieved by continuously tuning the drive frequency using rapidly converging real-time Hamiltonian e… ▽ More We report the simultaneous operation and two-qubit coupling measurement of a pair of two-electron spin qubits that are actively decoupled from quasistatic nuclear noise in a GaAs quadruple quantum dot array. Coherent Rabi oscillations of both qubits (decay time $\approx$2 μs; frequency few MHz) are achieved by continuously tuning the drive frequency using rapidly converging real-time Hamiltonian estimators. By state conditional exchange oscillation measurements, we also observe strong two-qubit capacitive interaction (> 190 MHz). We show that the scaling of the capacitive interaction with respect to intra-qubit exchange energies is stronger than the bilinear form, consistent with recent theoretical predictions. We observe a high ratio (>16) between coherence and conditional phase-flip time, which supports the possibility of generating high-fidelity and fast quantum entanglement between encoded spin qubits using a simple capacitive interaction. △ Less

Submitted 30 March, 2023; v1 submitted 9 June, 2022; originally announced June 2022.

Comments: 30 pages, 7 figures

Journal ref: npj Quantum Inf 9, 30 (2023)

Approaching ideal visibility in singlet-triplet qubit operations using energy-selective tunneling-based Hamiltonian estimation

Authors: Jehyun Kim, Jonginn Yun, Won** Jang, Hyeongyu Jang, Jaemin Park, Youngwook Song, Min-Kyun Cho, Sangwoo Shim, Hanseo Sohn, Hwanchul Jung, Vladimir Umansky, Dohun Kim

Abstract: We report energy selective tunneling readout-based Hamiltonian parameter estimation of a two-electron spin qubit in a GaAs quantum dot array. Optimization of readout fidelity enables a single-shot measurement time of 16 on average, with adaptive initialization and efficient qubit frequency estimation based on real-time Bayesian inference. For qubit operation in a frequency heralded mode, we observ… ▽ More We report energy selective tunneling readout-based Hamiltonian parameter estimation of a two-electron spin qubit in a GaAs quantum dot array. Optimization of readout fidelity enables a single-shot measurement time of 16 on average, with adaptive initialization and efficient qubit frequency estimation based on real-time Bayesian inference. For qubit operation in a frequency heralded mode, we observe a 40-fold increase in coherence time without resorting to dynamic nuclear polarization. We also demonstrate active frequency feedback with quantum oscillation visibility, single-shot measurement fidelity, and state initialization fidelity up to 97.7%, 99%, and over 99.7%, respectively. By pushing the sensitivity of the energy selective tunneling-based spin to charge conversion to the limit, the technique is useful for advanced quantum control protocols such as error mitigation schemes, where fast qubit parameter calibration with a large signal-to-noise ratio is crucial. △ Less

Submitted 10 June, 2022; v1 submitted 2 March, 2022; originally announced March 2022.

Comments: 24 pages, 7 figures, 1 table

Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure

Authors: Jonginn Yun, Suhan Son, Jeacheol Shin, Giung Park, Kaixuan Zhang, Young Jae Shin, Je-Geun Park, Dohun Kim

Abstract: We report unidirectional charge transport in a $\mathrm{NbSe_2}$ noncentrosymmetric superconductor, which is exchange-coupled with a $\mathrm{CrPS_4}$ van der Waals layered antiferromagnetic insulator. The $\mathrm{NbSe_2/CrPS_4}$ bilayer device exhibits bias-dependent superconducting critical-current variations of up to $16\%$, with the magnetochiral anisotropy reaching… ▽ More We report unidirectional charge transport in a $\mathrm{NbSe_2}$ noncentrosymmetric superconductor, which is exchange-coupled with a $\mathrm{CrPS_4}$ van der Waals layered antiferromagnetic insulator. The $\mathrm{NbSe_2/CrPS_4}$ bilayer device exhibits bias-dependent superconducting critical-current variations of up to $16\%$, with the magnetochiral anisotropy reaching $\sim 10^5\mathrm{\ T^{-1}A^{-1}}$. Furthermore, the $\mathrm{CrPS_4/NbSe_2/CrPS_4}$ spin-valve structure exhibits the superconducting diode effect with critical-current variations of up to $40\%$. We also utilize the magnetic proximity effect to induce switching in the superconducting state of the spin-valve structure. It exhibits an infinite magnetoresistance ratio depending on the field sweep direction and magnetization configuration. Our result demonstrates a novel route for enhancing the nonreciprocal response in the weak external field regime ($<50\mathrm{\ mT}$) by exploiting the magnetic proximity effect. △ Less

Submitted 27 June, 2023; v1 submitted 10 November, 2021; originally announced November 2021.

Comments: 25 pages, 3 figures, 2 supplemental figures

Journal ref: Phys. Rev. Research 5, L022064 (2023)

Predicting spin orbit coupling effect in the electronic and magnetic properties of cobalt (Co) doped WSe2 monolayer

Authors: Dinesh Thapa, Dinh Loc Duong, Seok Joon Yun, Santosh KC, Young Hee Lee, Seong-Gon Kim

Abstract: The electronic and magnetic properties of cobalt (Co) doped monolayer (ML) tungsten diselenide (WSe2) are investigated using the density functional theory with the on-site Hubbard potential correction (DFT+U) for the localized d orbitals of Co atom taking into account the spin orbit coupling (SOC) interaction. The results show that the substitution of Co at the W sites of ML WSe2 is energetically… ▽ More The electronic and magnetic properties of cobalt (Co) doped monolayer (ML) tungsten diselenide (WSe2) are investigated using the density functional theory with the on-site Hubbard potential correction (DFT+U) for the localized d orbitals of Co atom taking into account the spin orbit coupling (SOC) interaction. The results show that the substitution of Co at the W sites of ML WSe2 is energetically favorable under Se rich environment. We noticed that the Hund's exchange splitting (ΔH_{ex}) is dominant over the crystal field splitting (Δ_{cf}). The induced magnetic moment due to the Co-doped defect is ~3.00 μ_B per Co atom. The magnetic interaction between two Co atoms at the nearest neighbor separation depends mainly on the concentration of the impurity atoms. The calculated value of curie temperature (TC) is increasing with increasing impurity concentration satisfying the Zener model. Based on the results, it can be proposed that the Co-doped WSe2 monolayer is potential candidate to apply in spintronics, optoelectronics, and magnetic storage devices. △ Less

Submitted 3 November, 2021; v1 submitted 27 October, 2021; originally announced October 2021.

Temperature selective thermometry with sub-microsecond time resolution using dressed-spin states in diamond

Authors: Jiwon Yun, Kiho Kim, Sungjoon Park, Dohun Kim

Abstract: Versatile nanoscale sensors that are susceptible to changes in a variety of physical quantities often exhibit limited selectivity. This paper reports a novel scheme based on microwave-dressed spin states for optically probed nanoscale temperature detection using diamond quantum sensors, which provides selective sensitivity to temperature changes. By combining this scheme with a continuous pump-pro… ▽ More Versatile nanoscale sensors that are susceptible to changes in a variety of physical quantities often exhibit limited selectivity. This paper reports a novel scheme based on microwave-dressed spin states for optically probed nanoscale temperature detection using diamond quantum sensors, which provides selective sensitivity to temperature changes. By combining this scheme with a continuous pump-probe scheme using ensemble nitrogen-vacancy centers in nanodiamonds, a sub-microsecond temporal resolution with thermal sensitivity of 3.7 K$\cdot$Hz$^{-1/2}$ that is insensitive to variations in external magnetic fields on the order of 2 G is demonstrated. The presented results are favorable for the practical application of time-resolved nanoscale quantum sensing, where temperature imaging is required under fluctuating magnetic fields. △ Less

Submitted 18 November, 2021; v1 submitted 8 May, 2021; originally announced May 2021.

Journal ref: Advanced Quantum Technologies, Volume 4, Issue 11 2100084(2021)

Sub-bandgap activated charges transfer in a graphene-MoS2-graphene heterostructure

Authors: Sunil Kumar, Arvind Singh, Anand Nivedan, Sandeep Kumar, Seok Joon Yun, Young Hee Lee, Marc Tondusson, Jérôme Degert, Jean Oberle, Eric Freysz

Abstract: Monolayers of transition metal dichalcogenides are semiconducting materials which offer many prospects in optoelectronics. A monolayer of molybdenum disulfide (MoS2) has a direct bandgap of 1.88 eV. Hence, when excited with optical photon energies below its bandgap, no photocarriers are generated and a monolayer of MoS2 is not of much use in either photovoltaics or photodetection. Here, we demonst… ▽ More Monolayers of transition metal dichalcogenides are semiconducting materials which offer many prospects in optoelectronics. A monolayer of molybdenum disulfide (MoS2) has a direct bandgap of 1.88 eV. Hence, when excited with optical photon energies below its bandgap, no photocarriers are generated and a monolayer of MoS2 is not of much use in either photovoltaics or photodetection. Here, we demonstrate that large size MoS2 monolayer sandwiched between two graphene layers makes this heterostructure optically active well below the band gap of MoS2. An ultrafast optical pump-THz probe experiment reveals in real-time, transfer of carriers between graphene and MoS2 monolayer upon photoexcitation with photon energies down to 0.5 eV. It also helps to unravel an unprecedented enhancement in the broadband transient THz response of this tri-layer material system. We propose possible mechanism which can account for this phenomenon. Such specially designed heterostructures, which can be easily built around different transition metal dichalcogenide monolayers, will considerably broaden the scope for modern optoelectronic applications at THz bandwidth. △ Less

Submitted 20 March, 2021; originally announced March 2021.

Comments: Manuscript with supplementary information

Journal ref: Nano Select (2021)

Bandgap renormalization in monolayer MoS_2 on CsPbBr_3 quantum dot via charge transfer at room temperature

Authors: Subash Adhikari, Ji-Hee Kim, Bumsub Song, Manh-Ha Doan, Minh Dao Tran, Leyre Gomez, Hyun Kim, Hamza Zad Gul, Ganesh Ghimire, Seok Joon Yun, Tom Gregorkiewicz, Young Hee Lee

Abstract: Many-body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to shrink the intrinsic bandgap, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin-orbit splitting. This renormalization phenomenon has been commonly observed at low temperature and requires high photon excitation density. Here, we present the augmen… ▽ More Many-body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to shrink the intrinsic bandgap, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin-orbit splitting. This renormalization phenomenon has been commonly observed at low temperature and requires high photon excitation density. Here, we present the augmented bandgap renormalization in monolayer MoS_2 anchored on CsPbBr_3 perovskite quantum dots at room temperature via charge transfer. The amount of electrons significantly transferred from perovskite gives rise to the large plasma screening in MoS_2. The bandgap in heterostructure is red-shifted by 84 meV with minimal pump fluence, the highest bandgap renormalization in monolayer MoS_2 at room temperature, which saturates with further increase of pump fluence. We further find that the magnitude of bandgap renormalization inversely relates to Thomas-Fermi screening length. This provides plenty of room to explore the bandgap renormalization within existing vast libraries of large bandgap van der Waals heterostructure towards practical devices such as solar cells, photodetectors and light-emitting-diodes. △ Less

Submitted 26 October, 2020; originally announced October 2020.

Substitutional VSn nanodispersed in MoS$_2$ film for Pt-scalable catalyst

Authors: Frederick Osei-Tutu Agyapong-Fordjour, Seok Joon Yun, Hyung-** Kim, Wooseon Choi, Soo Ho Choi, Laud Anim Adofo, Stephen Boandoh, Yong In Kim, Soo Min Kim, Young-Min Kim, Young Hee Lee, Young-Kyu Han, Ki Kang Kim

Abstract: Among transition metal dichalcogenides (TMdCs) as alternatives for Pt-based catalysts, metallic-TMdCs catalysts have highly reactive basal-plane but are unstable. Meanwhile, chemically stable semiconducting-TMdCs show limiting catalytic activity due to their inactive basal-plane. Here, we propose metallic vanadium sulfide (VSn) nanodispersed in a semiconducting MoS2 film (V-MoS2) as an efficient c… ▽ More Among transition metal dichalcogenides (TMdCs) as alternatives for Pt-based catalysts, metallic-TMdCs catalysts have highly reactive basal-plane but are unstable. Meanwhile, chemically stable semiconducting-TMdCs show limiting catalytic activity due to their inactive basal-plane. Here, we propose metallic vanadium sulfide (VSn) nanodispersed in a semiconducting MoS2 film (V-MoS2) as an efficient catalyst. During synthesis, vanadium atoms are substituted into hexagonal monolayer MoS2 to form randomly distributed VSn units. The V-MoS2 film on a Cu electrode exhibits Pt-scalable catalytic performance; current density of 1000 mA cm-2 at 0.6 V, overpotential of -0.06 V at a current density of 10 mA cm-2 and exchange current density of 0.65 mA cm-2 at 0 V with excellent cycle stability for hydrogen-evolution-reaction (HER). The high intrinsic HER performance of V-MoS2 is explained by the efficient electron transfer from the Cu electrode to chalcogen vacancies near vanadium sites with optimal Gibbs free energy (-0.02 eV). This study adds insight into ways to engineer TMdCs at the atomic-level to boost intrinsic catalytic activity for hydrogen evolution. △ Less

Submitted 21 October, 2020; originally announced October 2020.

Comments: 17 pages, 3 figures and a table

Epitaxial single-crystal growth of transition metal dichalcogenide monolayers via atomic sawtooth Au surface

Authors: Soo Ho Choi, Hyung-** Kim, Bumsub Song, Yong In Kim, Gyeongtak Han, Hayoung Ko, Stephen Boandoh, Ji Hoon Choi, Chang Seok Oh, Jeong Won **, Seok Joon Yun, Bong Gyu Shin, Hu Young Jeong, Young-Min Kim, Young-Kyu Han, Young Hee Lee, Soo Min Kim, Ki Kang Kim

Abstract: Growth of two-dimensional van der Waals layered single-crystal (SC) films is highly desired to manifest intrinsic material sciences and unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform for diatomic transition metal dichalcogenide (TMdC) film has not been established to date. Here, we report th… ▽ More Growth of two-dimensional van der Waals layered single-crystal (SC) films is highly desired to manifest intrinsic material sciences and unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform for diatomic transition metal dichalcogenide (TMdC) film has not been established to date. Here, we report the SC growth of TMdC monolayers in a centimeter scale via atomic sawtooth gold surface as a universal growth template. Atomic tooth-gullet surface is constructed by the one-step solidification of liquid gold, evidenced by transmission-electron-microscopy. Anisotropic adsorption energy of TMdC cluster, confirmed by density-functional calculations, prevails at the periodic atomic-step edge to yield unidirectional epitaxial growth of triangular TMdC grains, eventually forming the SC film, regardless of Miller indices. Growth using atomic sawtooth gold surface as a universal growth template is demonstrated for several TMdC monolayer films, including WS2, WSe2, MoS2, MoSe2/WSe2 heterostructure, and W1-xMoxS2 alloy. Our strategy provides a general avenue for the SC growth of diatomic van der Waals heterostructures in a wafer scale, to further facilitate the applications of TMdCs in post silicon technology. △ Less

Submitted 20 October, 2020; originally announced October 2020.

Comments: The supporting information is included in the manuscript file

Modulation Do** via a 2d Atomic Crystalline Acceptor

Authors: Yi** Wang, Jesse Balgley, Eli Gerber, Mason Gray, Narendra Kumar, Xiaobo Lu, Jia-Qiang Yan, Arash Fereidouni, Rabindra Basnet, Seok Joon Yun, Dhavala Suri, Hikari Kitadai, Takashi Taniguchi, Kenji Watanabe, Xi Ling, Jagadeesh Moodera, Young Hee Lee, Hugh O. H. Churchill, ** Hu, Li Yang, Eun-Ah Kim, David G. Mandrus, Erik A. Henriksen, Kenneth S. Burch

Abstract: Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation do** of exfoliated, chemical vapor de… ▽ More Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation do** of exfoliated, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE) materials. Short-ranged lateral do** (${\leq}65\ \text{nm}$) and high homogeneity are achieved in proximate materials with a single layer of \arucl. This leads to the highest monolayer graphene (mlg) mobilities ($4,900\ \text{cm}^2/ \text{Vs}$) at these high hole densities ($3\times10^{13}\ \text{cm}^{-2}$); and yields larger charge transfer to bilayer graphene (blg) ($6\times10^{13}\ \text{cm}^{-2}$). We further demonstrate proof of principle optical sensing, control via twist angle, and charge transfer through hexagonal boron nitride (hBN). △ Less

Submitted 15 July, 2020; v1 submitted 13 July, 2020; originally announced July 2020.

Evidence of itinerant holes for long-range magnetic order in tungsten diselenide semiconductor with vanadium dopants

Authors: Bumsub Song, Seok Joon Yun, **bao Jiang, Kory Beach, Wooseon Choi, Young-Min Kim, Humberto Terrones, Young Jae Song, Dinh Loc Duong, Young Hee Lee

Abstract: One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with a low magnetic do** concentration to maintain the gate tunability of the host semiconductor, as well as to increase Curie temperature. Two-dimensional van der Waals semiconductors have been recently investigated to demonstrate the magnetic order in DMSs; however, a comprehensive und… ▽ More One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with a low magnetic do** concentration to maintain the gate tunability of the host semiconductor, as well as to increase Curie temperature. Two-dimensional van der Waals semiconductors have been recently investigated to demonstrate the magnetic order in DMSs; however, a comprehensive understanding of the mechanism responsible for the gate-tunable long-range magnetic order in DMSs has not been achieved yet. Here, we introduce a monolayer tungsten diselenide (WSe2) semiconductor with V dopants to demonstrate the long-range magnetic order through itinerant spin-polarized holes. The V atoms are sparsely located in the host lattice by substituting W atoms, which is confirmed by scanning tunneling microscopy and high-resolution transmission electron microscopy. The V impurity states and the valence band edge states are overlapped, which is congruent with density functional theory calculations. The field-effect transistor characteristics reveal the itinerant holes within the hybridized band; this clearly resembles the Zener model. Our study gives an insight into the mechanism of the long-range magnetic order in V-doped WSe2, which can also be used for other magnetically doped semiconducting transition metal dichalcogenides. △ Less

Submitted 17 February, 2020; originally announced February 2020.

Comments: 19 pages, 4 figures

Journal ref: Phys. Rev. B 103, 094432 (2021)

Strong polarization of individual nuclear spins weakly coupled to nitrogen-vacancy color centers in diamond

Authors: Jiwon Yun, Kiho Kim, Dohun Kim

Abstract: We experimentally demonstrate high degree of polarization of 13C nuclear spins weakly interacting with nitrogen-vacancy (NV) centers in diamond. We combine coherent microwave excitation pulses with optical illumination to provide controlled relaxation and achieve a polarity-tunable, fast nuclear polarization of degree higher than 85% at room temperature for remote 13C nuclear spins exhibiting hype… ▽ More We experimentally demonstrate high degree of polarization of 13C nuclear spins weakly interacting with nitrogen-vacancy (NV) centers in diamond. We combine coherent microwave excitation pulses with optical illumination to provide controlled relaxation and achieve a polarity-tunable, fast nuclear polarization of degree higher than 85% at room temperature for remote 13C nuclear spins exhibiting hyperfine interaction strength with NV centers of the order of 600 kHz. We show with the aid of numerical simulation that the anisotropic hyperfine tensor components naturally provide a route to control spin mixing parameter so that highly efficient nuclear polarization is enabled through careful tuning of nuclear quantization axis by external magnetic field. We further discuss spin dynamics and wide applicability of this method to various target 13C nuclear spins around the NV center electron spin. The proposed control method demonstrates an efficient and versatile route to realize, for example, high-fidelity spin register initialization and quantum metrology using nuclear spin resources in solids. △ Less

Submitted 8 September, 2019; originally announced September 2019.

Journal ref: New J. Phys. 21 093065(2019)

Role of Acoustic Phonon Transport in Near- to Asperity-Contact Heat Transfer

Authors: Amun Jarzembski, Takuro Tokunaga, Jacob Crossley, Jeonghoon Yun, Cedric Shaskey, Ryan A. Murdick, Inkyu Park, Mathieu Francoeur, Keunhan Park

Abstract: Acoustic phonon transport is revealed as a potential radiation-to-conduction transition mechanism for single-digit nanometer vacuum gaps. To show this, we measure heat transfer from a feedback-controlled platinum nanoheater to a laterally oscillating silicon tip as the tip-nanoheater vacuum gap distance is precisely controlled from a single-digit nanometer down to bulk contact in a high-vacuum she… ▽ More Acoustic phonon transport is revealed as a potential radiation-to-conduction transition mechanism for single-digit nanometer vacuum gaps. To show this, we measure heat transfer from a feedback-controlled platinum nanoheater to a laterally oscillating silicon tip as the tip-nanoheater vacuum gap distance is precisely controlled from a single-digit nanometer down to bulk contact in a high-vacuum shear force microscope. The measured thermal conductance shows a gap dependence of $d^{-5.7\pm1.1}$ in the near-contact regime, which is in good agreement with acoustic phonon transport modeling based on the atomistic Green's function framework. The obtained experimental and theoretical results suggest that acoustic phonon transport across a nanoscale vacuum gap can be the dominant heat transfer mechanism in the near- and asperity-contact regimes and can potentially be controlled by an external force stimuli. △ Less

Submitted 28 September, 2022; v1 submitted 19 April, 2019; originally announced April 2019.

Comments: 49 pages, 17 figures (including the main text, appendix, and supplemental material)

Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant

Authors: Seok Joon Yun, Dinh Loc Duong, Manh-Ha Doan, Kirandeep Singh, Thanh Luan Phan, Wooseon Choi, Young-Min Kim, Young Hee Lee

Abstract: Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manif… ▽ More Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manifested using magnetic force microscopy up to 360K, while retaining high on/off current ratio of ~105 at 0.1% V-do** concentration. The V-substitution to W sites keep a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission-electron microscopy, which implies the possibility of the Ruderman-Kittel-Kasuya-Yoshida interaction (or Zener model) by establishing the long-range ferromagnetic order in V-doped WSe2 monolayer through free hole carriers. More importantly, the ferromagnetic order is clearly modulated by applying a back gate. Our findings open new opportunities for using two-dimensional transition metal dichalcogenides for future spintronics. △ Less

Submitted 19 January, 2020; v1 submitted 17 June, 2018; originally announced June 2018.

Comments: 16 pages, 4 figures

Journal ref: Adv. Sci. 2020, 7, 1903076

An efficient fluorescent single-particle position tracking system for long-term pulsed measurements of nitrogen-vacancy centers in diamond

Authors: Kiho Kim, Jiwon Yun, Donghyuck Lee, Dohun Kim

Abstract: A simple and convenient design enables real-time three-dimensional position tracking of nitrogen-vacancy (NV) centers in diamond. The system consists entirely of commercially available components (a single photon counter, a high-speed digital-to-analog converter, a phase-sensitive detector-based feedback device, and a piezo stage), eliminating the need for custom programming or rigorous optimizati… ▽ More A simple and convenient design enables real-time three-dimensional position tracking of nitrogen-vacancy (NV) centers in diamond. The system consists entirely of commercially available components (a single photon counter, a high-speed digital-to-analog converter, a phase-sensitive detector-based feedback device, and a piezo stage), eliminating the need for custom programming or rigorous optimization processes. With a large input range of counters and trackers combined with the high sensitivity of single-photon counting, high-speed position tracking (upper bound recovery time of 0.9 s upon 250 nm of step-like positional shift) not only of bright ensembles but also of low-photon-collection-efficiency single to few NV centers is possible. The tracking requires position modulation of only 10 nm, which allows simultaneous position tracking and pulsed measurements in the long term. Therefore, this tracking system enables measuring a single spin magnetic resonance and Rabi oscillations at a very high resolution even without photon collection optimization. The system is widely applicable to various fields related to NV centers quantum manipulation research such as NV optical trap**, NV tracking in fluid dynamics, and biological sensing using NV centers inside a biological cell. △ Less

Submitted 6 January, 2018; originally announced January 2018.

Comments: 17 pages, 3 figures

Accurate analysis for harmonic Hall voltage measurement for spin-orbit torques

Authors: Seok ** Yun, Eun-Sang Park, Kyung-** Lee, Sang Ho Lim

Abstract: An accurate method is developed to extract the spin-orbit effective fields through analysis of the results of harmonic Hall voltage measurements by deriving detailed analytical equations, in which both the z-component of the applied magnetic field and the second-order perpendicular magnetic anisotropy are taken into account. The method is tested by analyzing the results of a macrospin simulation.… ▽ More An accurate method is developed to extract the spin-orbit effective fields through analysis of the results of harmonic Hall voltage measurements by deriving detailed analytical equations, in which both the z-component of the applied magnetic field and the second-order perpendicular magnetic anisotropy are taken into account. The method is tested by analyzing the results of a macrospin simulation. The spin-orbit effective fields extracted from the analysis are found to be in excellent agreement with the input spin-orbit effective fields used for the macrospin simulation over the entire range of the polar magnetization angle and a wide range (0-2) of the ratio of the planar to the anomalous Hall voltage considered in this study. The accuracy of the proposed method is demonstrated more clearly via a systematic study involving a comparison of its results with those of the conventional analytical method. △ Less

Submitted 3 December, 2017; originally announced December 2017.

Comments: Supplementary Information accompanies the paper on the NPG Asia Materials website (https://www.nature.com/articles/am2017200)

Journal ref: NPG Asia Materials 9 (2017) e449

A New Perspective on the Role of A-site Cation in Perovskite Solar Cells

Authors: Chang Woo Myung, Jeonghun Yun, Geunsik Lee, Kwang S. Kim

Abstract: As the race towards higher efficiency for inorganic/organic hybrid perovskite solar cells (PSCs) is becoming highly competitive, a design scheme to maximize carrier transport towards higher power efficiency has been urgently demanded. Here, we unravel a hidden role of A-site cation of PSCs in carrier transport which has been largely neglected, i.e., tuning the Frohlich electron-phonon (e-ph) coupl… ▽ More As the race towards higher efficiency for inorganic/organic hybrid perovskite solar cells (PSCs) is becoming highly competitive, a design scheme to maximize carrier transport towards higher power efficiency has been urgently demanded. Here, we unravel a hidden role of A-site cation of PSCs in carrier transport which has been largely neglected, i.e., tuning the Frohlich electron-phonon (e-ph) coupling of longitudinal optical (LO) phonon by A-site cations. The key for steering Frohlich polaron is to control the interaction strength and the number of proton (or lithium) coordination to halide ion. The coordination to I alleviates electron-phonon scattering by either decreasing the Born effective charge or absorbing the LO motion of I. This novel principle discloses lower electron-phonon coupling by several promising organic cations including hydroxyl-ammonium cation (NH$_3$OH$^+$) and possibly Li$^+$ solvating methylamine (Li$^+$NH$_2$CH$_3$) than methyl-ammonium cation. A new perspective on the role of A-site cation could help in improving power efficiency and accelerating the application of PSCs. △ Less

Submitted 24 November, 2017; originally announced November 2017.

Comments: 7 pages, 4 figures

The edge delamination of monolayer transition metal dichalcogenides

Authors: Thuc Hue Ly, Seok Joon Yun, Quoc Huy Thi, Jiong Zhao

Abstract: Delamination of thin films from the supportive substrates is critical issues in thin film industry and technology. The emergent two-dimensional materials, atomic layered materials, such as transition metal dichalcogenides are highly flexible thus the buckles and wrinkles can be easily generated and play vital effects on the physical properties. Here we introduce one kind of patterned buckling beha… ▽ More Delamination of thin films from the supportive substrates is critical issues in thin film industry and technology. The emergent two-dimensional materials, atomic layered materials, such as transition metal dichalcogenides are highly flexible thus the buckles and wrinkles can be easily generated and play vital effects on the physical properties. Here we introduce one kind of patterned buckling behavior caused by the delamination from substrate initiated at the edges of the chemical vapor deposition synthesized monolayer transition metal dichalcogenides, mainly due to the thermal expansion mismatch. The atomic force microscopy and optical characterizations clearly showed the puckered structures associated with strains, whereas the transmission electron microscopy revealed the special sawtooth shaped edge structures which break the geometrical symmetry of the buckling behavior of hexagonal samples. The condition of this edge delamination is in accordance with the fracture theory. This edge delamination process and buckling upon synthesis is universal for most of the ultrathin two dimensional materials, and it is definitely noteworthy in their future applications. △ Less

Submitted 15 June, 2017; originally announced June 2017.

Comments: 18 pages, 6 figures

Perovskites for Solar and Thermal Energy Harvesting: State of the Art Technologies, Current Scenario and Future Directions

Authors: Richa Pandey, Gaurav Vats, Jae Yun, Chris R Bowen, Anita W. Y. Ho-Baillie, Jan Seidel

Abstract: Solar energy is anticipated to be the most viable source of sustainable green energy. Perovskites have gained significant research attention in recent years as a solar energy harvesting material due to their desirable photovoltaic enabling properties. The potential strategies for a more effective use of these materials can involve multiple energy conversion mechanisms through a single device or em… ▽ More Solar energy is anticipated to be the most viable source of sustainable green energy. Perovskites have gained significant research attention in recent years as a solar energy harvesting material due to their desirable photovoltaic enabling properties. The potential strategies for a more effective use of these materials can involve multiple energy conversion mechanisms through a single device or employing materials where a solar or thermal input provides multiple electrical outputs to enhance the overall energy harvesting capability. In this context, the present review focuses on perovskites, including both organic halide perovskites and inorganic oxide perovskites, due to their proven properties as photovoltaic materials and their intriguing potential for additional functionality, such as ferroelectricity. Ferroelectrics are a special class of perovskites that have been studied in detail for photoferroic, pyroelectric and thermoelectric effects and energy storage, which we briefly review here. Furthermore, the possibilities of simultaneously tuning these mechanisms in perovskite materials for multiple energy conversion mechanisms and storage for ultra-high density capacitor and battery applications is also examined in order to attain a better understanding and to present novel opportunities. An understanding of all these mechanisms and device prospects will inspire and inform the selection of appropriate materials and potential novel designs so that the available solar and thermal resource could be utilized in a more effective manner. This review will not only help in selecting an appropriate material from the existing pool of perovskite materials, but will also provide an outlook and assistance to researchers in develo** new material systems. △ Less

Submitted 16 May, 2017; originally announced May 2017.

Comments: 56 Pages, 10 Figures, 2 Tables

Journal ref: Adv.Mater.2019, 1807376

Ultrafast Electron-Lattice Coupling Dynamics in VO2 and V2O3 Thin Films

Authors: Elsa Abreu, Stephanie N. Gilbert Corder, Sun ** Yun, Siming Wang, Juan Gabriel Ramirez, Kevin West, **gdi Zhang, Salinporn Kittiwatanakul, Ivan K. Schuller, Jiwei Lu, Stuart A. Wolf, Hyun-Tak Kim, Mengkun Liu, Richard D. Averitt

Abstract: Ultrafast optical pump - optical probe and optical pump - terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the electronic oscillations generated by the photoinduced l… ▽ More Ultrafast optical pump - optical probe and optical pump - terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the electronic oscillations generated by the photoinduced longitudinal acoustic modulation, reveals the strong electron-phonon coupling that exists in the metallic state of both materials. The low energy Drude response of V2O3 appears more susceptible than VO2 to ultrafast strain control. Additionally, our results provide a measurement of the temperature dependence of the sound velocity in both systems, revealing a four- to fivefold increase in VO2 and a three- to fivefold increase in V2O3 across the phase transition. Our data also confirm observations of strong dam** and phonon anharmonicity in the metallic phase of VO2, and suggest that a similar phenomenon might be at play in the metallic phase of V2O3. More generally, our simple table-top approach provides relevant and detailed information about dynamical lattice properties of vanadium oxides, opening the way to similar studies in other complex materials. △ Less

Submitted 19 January, 2017; originally announced January 2017.

Comments: 21 pages, 5 figures, supplemental material included

Journal ref: Phys. Rev. B 96, 094309 (2017)

Resistive Switching Phenomena of HfO2 Films Grown by MOCVD for Resistive Switching Memory Devices

Authors: Min Ju Yun, Sungho Kim, Hee-Dong Kim

Abstract: The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 uA and 4 uA, respectively, at VREAD = 1 V. Regarding the resistive switching performan… ▽ More The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 uA and 4 uA, respectively, at VREAD = 1 V. Regarding the resistive switching performance, the stable RS performance was observed under 40 repetitive dc cycling test with the small variations of set/reset voltages and currents, and good retention characteristics over 105 s in both LRS and HRS. These results show the possibility of MOCVD grown HfO2 films as a promising resistive switching materials for ReRAM applications. △ Less

Submitted 19 May, 2016; originally announced May 2016.

Resistive Switching Characteristics of Al/Si3N4/p-Si MIS-Based Resistive Switching Memory Devices

Authors: Min Ju Yun, Sungho Kim, Hee-Dong Kim

Abstract: In this study, we proposed and demonstrated a self-rectifying property of silicon nitride (Si3N4)-based resistive random access memory device by employing p-type silicon (p-Si) as bottom electrode. The RRAM devices consisted of Al/Si3N4/p-Si are fabricated by a low presure chemical vapor deposition and exhibited an intrinsic diode property with non-linear current-voltage (I-V) behavior. In additio… ▽ More In this study, we proposed and demonstrated a self-rectifying property of silicon nitride (Si3N4)-based resistive random access memory device by employing p-type silicon (p-Si) as bottom electrode. The RRAM devices consisted of Al/Si3N4/p-Si are fabricated by a low presure chemical vapor deposition and exhibited an intrinsic diode property with non-linear current-voltage (I-V) behavior. In addition, compared to conventional metal/insulator/metal (MIM) structure of Al/Si3N4/Ti RRAM cells, operating current in whole bias regions for proposed metal/insulator/semiconductor (MIS) cells has been dramatically lowered because introduced p-Si bottom electrode efficiently suppresses the current in both low and high resistive states. As a result, the results mean that by employing p-Si as bottom electrode the Si3N4-based RRAM cells can be applied to selector-free RRAM cells. △ Less

Submitted 19 May, 2016; originally announced May 2016.

Analysis of Laser ARPES from Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ in superconductive state: angle resolved self-energy and fluctuation spectrum

Authors: Jae Hyun Yun, ** Mo Bok, Han-Yong Choi, Wentao Zhang, X. J. Zhou, Chandra M. Varma

Abstract: We analyze the ultra high resolution laser angle resolved photo-emission spectroscopy (ARPES) intensity from the slightly underdoped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ in the superconductive (SC) state. The momentum distribution curves (MDC) were fitted at each energy $\w$ employing the SC Green's function along several cuts perpendicular to the Fermi surface with the tilt angle $θ$ with respect to the… ▽ More We analyze the ultra high resolution laser angle resolved photo-emission spectroscopy (ARPES) intensity from the slightly underdoped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ in the superconductive (SC) state. The momentum distribution curves (MDC) were fitted at each energy $\w$ employing the SC Green's function along several cuts perpendicular to the Fermi surface with the tilt angle $θ$ with respect to the nodal cut. The clear observation of particle-hole mixing was utilized such that the complex self-energy as a function of $ω$ is directly obtained from the fitting. The obtained angle resolved self-energy is then used to deduce the Eliashberg function $α^2 F^{(+)}(þ,\w)$ in the diagonal channel by inverting the d-wave Eliashberg equation using the maximum entropy method. Besides a broad featureless spectrum up to the cutoff energy $ω_c$, the deduced $α^2 F$ exhibits two peaks around 0.05 eV and 0.015 eV. The former and the broad feature are already present in the normal state, while the latter emerges only below $T_c$. Both peaks become enhanced as $T$ is lowered or the angle $þ$ moves away from the nodal direction. The implication of these findings are discussed. △ Less

Submitted 28 September, 2011; v1 submitted 8 August, 2011; originally announced August 2011.

Comments: 7 pages, 5 figures, summited to PRB

Journal ref: Physical Review B 84, 104521 (2011)

Extraction of Electron Self-Energy and Gap Function in the Superconducting State of Bi_2Sr_2CaCu_2O_8 Superconductor via Laser-Based Angle-Resolved Photoemission

Authors: Wentao Zhang, ** Mo Bok, Jae Hyun Yun, Junfeng He, Guodong Liu, Lin Zhao, Haiyun Liu, Jianqiao Meng, Xiaowen Jia, Yingying Peng, Daixiang Mou, Shanyu Liu, Li Yu, Shaolong He, Xiaoli Dong, Jun Zhang, J. S. Wen, Z. J. Xu, G. D. Gu, Guiling Wang, Yong Zhu, Xiaoyang Wang, Qinjun Peng, Zhimin Wang, Shen** Zhang , et al. (6 additional authors not shown)

Abstract: Super-high resolution laser-based angle-resolved photoemission measurements have been performed on a high temperature superconductor Bi_2Sr_2CaCu_2O_8. The band back-bending characteristic of the Bogoliubov-like quasiparticle dispersion is clearly revealed at low temperature in the superconducting state. This makes it possible for the first time to experimentally extract the complex electron self-… ▽ More Super-high resolution laser-based angle-resolved photoemission measurements have been performed on a high temperature superconductor Bi_2Sr_2CaCu_2O_8. The band back-bending characteristic of the Bogoliubov-like quasiparticle dispersion is clearly revealed at low temperature in the superconducting state. This makes it possible for the first time to experimentally extract the complex electron self-energy and the complex gap function in the superconducting state. The resultant electron self-energy and gap function exhibit features at ~54 meV and ~40 meV, in addition to the superconducting gap-induced structure at lower binding energy and a broad featureless structure at higher binding energy. These information will provide key insight and constraints on the origin of electron pairing in high temperature superconductors. △ Less

Submitted 18 March, 2011; originally announced March 2011.

Comments: 4 pages, 4 figures

Journal ref: Physical Review B 85 (2012) 064514

Momentum Dependence of the Single-Particle Self-Energy and Fluctuation Spectrum of Slightly Underdoped Bi_2 Sr_2 CaCu_2 O_{8+δ} from High Resolution Laser ARPES

Authors: ** Mo Bok, Jae Hyun Yun, Han-Yong Choi, Wentao Zhang, X. J. Zhou, Chandra M. Varma

Abstract: We deduce the normal state angle-resolved single-particle self-energy $Σ(θ, ω)$ and the Eliashberg function (i.e., the product of the fluctuation spectrum and its coupling to fermions) $α^2 F(θ,ω)$ for the high temperature superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ from the ultra high resolution laser angle-resolved photoemission spectroscopy (ARPES). The self-energy $Σ(θ, ω)$ at energy $ω$ alon… ▽ More We deduce the normal state angle-resolved single-particle self-energy $Σ(θ, ω)$ and the Eliashberg function (i.e., the product of the fluctuation spectrum and its coupling to fermions) $α^2 F(θ,ω)$ for the high temperature superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ from the ultra high resolution laser angle-resolved photoemission spectroscopy (ARPES). The self-energy $Σ(θ, ω)$ at energy $ω$ along several cuts normal to the Fermi surface at the tilt angles $θ$ with respect to the nodal direction in a slightly underdoped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ were extracted by fitting the ARPES momentum distribution curves. Then, using the extracted self-energy as the experimental input, the $α^2 F(θ,ω)$ is deduced by inverting the Eliashberg equation employing the adaptive maximum entropy method. Our principal new result is that the Eliashberg function $α^2F(θ,ω)$ collapse for all $θ$ onto a single function of $ω$ up to the upper cut-off energy despite the $θ$ dependence of the self-energy. The in-plane momentum anisotropy is therefore predominantly due to the anisotropic band dispersion effects. The obtained Eliashberg function has a small peak at $ω\approx0.05$ eV and flattens out above 0.1 eV up to the angle-dependent cut-off. It takes the intrinsic cut-off of about 0.4 eV or the energy of the bottom of the band with respect to the Fermi energy in the direction $θ$, whichever is lower. The angle independence of the $α^2 F(θ,ω)$ is consistent only with the fluctuation spectra which have the short correlation length on the scale the lattice constant. This implies among others that the antiferromagnetic fluctuations may not be underlying physics of the deduced fluctuation spectrum. △ Less

Submitted 30 April, 2010; v1 submitted 1 December, 2009; originally announced December 2009.

Comments: 10 pages, 10 figures. Accepted at PRB

Model for the inverse isotope effect of FeAs-based superconductors in the $π$-phase-shifted pairing state

Authors: Han-Yong Choi, Jae Hyun Yun, Yunkyu Bang, Hyun C. Lee

Abstract: The isotope effects for Fe based superconductors are considered by including the phonon and magnetic fluctuations within the two band Eliashberg theory. We show that the recently observed inverse isotope effects of Fe, $α_{Fe} \approx -0.18 \pm 0.03 $,\cite{Shirage0903.3515} as well as the large positive isotope exponent ($α\approx 0.35$) can naturally arise for the magnetically induced sign rev… ▽ More The isotope effects for Fe based superconductors are considered by including the phonon and magnetic fluctuations within the two band Eliashberg theory. We show that the recently observed inverse isotope effects of Fe, $α_{Fe} \approx -0.18 \pm 0.03 $,\cite{Shirage0903.3515} as well as the large positive isotope exponent ($α\approx 0.35$) can naturally arise for the magnetically induced sign revered s-wave pairing state within reasonable parameter range. Either experimental report can not be discarded from the present analysis based on the parameter values they require. The inverse and positive isotope effects mean, respectively, the interband and intraband dominant eletron-phonon interaction. We first make our points based on the analytic result from the square well potential model and present explicit numerical calculations of the two band Eliashberg theory. △ Less

Submitted 18 August, 2009; v1 submitted 12 April, 2009; originally announced April 2009.

Comments: 4 pages and 2 figures

Journal ref: Published in the PRB 80, 052505 (2009)

Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide

Authors: M. M. Qazilbash, M. Brehm, G. O. Andreev, A. Frenzel, P. -C. Ho, Byung-Gyu Chae, Bong-Jun Kim, Sun ** Yun, Hyun-Tak Kim, A. V. Balatsky, O. G. Shpyrko, M. B. Maple, F. Keilmann, D. N. Basov

Abstract: We present a detailed infrared study of the insulator-to-metal transition (IMT) in vanadium dioxide (VO2) thin films. Conventional infrared spectroscopy was employed to investigate the IMT in the far-field. Scanning near-field infrared microscopy directly revealed the percolative IMT with increasing temperature. We confirmed that the phase transition is also percolative with cooling across the I… ▽ More We present a detailed infrared study of the insulator-to-metal transition (IMT) in vanadium dioxide (VO2) thin films. Conventional infrared spectroscopy was employed to investigate the IMT in the far-field. Scanning near-field infrared microscopy directly revealed the percolative IMT with increasing temperature. We confirmed that the phase transition is also percolative with cooling across the IMT. We present extensive near-field infrared images of phase coexistence in the IMT regime in VO2. We find that the coexisting insulating and metallic regions at a fixed temperature are static on the time scale of our measurements. A novel approach for analyzing the far-field and near-field infrared data within the Bruggeman effective medium theory was employed to extract the optical constants of the incipient metallic puddles at the onset of the IMT. We found divergent effective carrier mass in the metallic puddles that demonstrates the importance of electronic correlations to the IMT in VO2. We employ the extended dipole model for a quantitative analysis of the observed near-field infrared amplitude contrast and compare the results with those obtained with the basic dipole model. △ Less

Submitted 2 April, 2009; originally announced April 2009.

Comments: 18 pages including 8 figures

Journal ref: Phys. Rev. B 79, 075107 (2009)

Switching of the Mott transition based on the hole-driven MIT theory

Authors: Hyun-Tak Kim, Bong-Jun Kim, Yong Wook Lee, Byung-Gyu Chae, Sun ** Yun

Abstract: Switching voltage of first-order metal-insulator transition (MIT) in VO_2, an inhomogeneous strongly correlated system, is changed by irradiating an infrared light with wavelength, 1.5 micrometer, and applying the electric field (photo-induced switching). This was predicted in the hole-driven MIT theory in which hole do** of a low concentration below 0.01% into conduction band (Fermi surface)… ▽ More Switching voltage of first-order metal-insulator transition (MIT) in VO_2, an inhomogeneous strongly correlated system, is changed by irradiating an infrared light with wavelength, 1.5 micrometer, and applying the electric field (photo-induced switching). This was predicted in the hole-driven MIT theory in which hole do** of a low concentration below 0.01% into conduction band (Fermi surface) induces the abrupt MIT as correlation effect. The switching is explained by the Mott transition not the Peierls transition. △ Less

Submitted 15 April, 2008; originally announced April 2008.

Comments: 2 pages, 1 figure

Journal ref: Physica B 403 (2008) 1434-1436

Electrodynamics of the vanadium oxides VO2 and V2O3

Authors: M. M. Qazilbash, A. A. Schafgans, K. S. Burch, S. J. Yun, B. G. Chae, B. J. Kim, H. T. Kim, D. N. Basov

Abstract: The optical/infrared properties of films of vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) have been investigated via ellipsometry and near-normal incidence reflectance measurements from far infrared to ultraviolet frequencies. Significant changes occur in the optical conductivity of both VO2 and V2O3 across the metal-insulator transitions at least up to (and possibly beyond) 6 eV. We ar… ▽ More The optical/infrared properties of films of vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) have been investigated via ellipsometry and near-normal incidence reflectance measurements from far infrared to ultraviolet frequencies. Significant changes occur in the optical conductivity of both VO2 and V2O3 across the metal-insulator transitions at least up to (and possibly beyond) 6 eV. We argue that such changes in optical conductivity and electronic spectral weight over a broad frequency range is evidence of the important role of electronic correlations to the metal-insulator transitions in both of these vanadium oxides. We observe a sharp optical transition with possible final state (exciton) effects in the insulating phase of VO2. This sharp optical transition occurs between narrow a1g bands that arise from the quasi-one-dimensional chains of vanadium dimers. Electronic correlations in the metallic phases of both VO2 and V2O3 lead to reduction of the kinetic energy of the charge carriers compared to band theory values, with paramagnetic metallic V2O3 showing evidence of stronger correlations compared to rutile metallic VO2. △ Less

Submitted 18 March, 2008; originally announced March 2008.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. B 77, 115121 (2008)

Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging

Authors: M. M. Qazilbash, M. Brehm, Byung-Gyu Chae, P. -C. Ho, G. O. Andreev, Bong-Jun Kim, Sun ** Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, Hyun-Tak Kim, D. N. Basov

Abstract: Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by do** or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator… ▽ More Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by do** or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator vanadium dioxide (VO2) in which the metallic state can be induced by increasing temperature. Scanning near-field infrared microscopy allows us to directly image nano-scale metallic puddles that appear at the onset of the insulator-to-metal transition. In combination with far-field infrared spectroscopy, the data reveal the Mott transition with divergent quasiparticle mass in the metallic puddles. The experimental approach employed here sets the stage for investigations of charge dynamics on the nanoscale in other inhomogeneous correlated electron systems. △ Less

Submitted 8 January, 2008; originally announced January 2008.

Comments: 22 pages (including 3 figures)

Journal ref: Science 318, 1750 (2007)

Temperature dependence of Mott transition in VO_2 and programmable critical temperature sensor

Authors: Bong-Jun Kim, Yong Wook Lee, Byung-Gyu Chae, Sun ** Yun, Soo-Young Oh, Young-Sik Lim, Hyun-Tak Kim

Abstract: The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing applied voltages, the transition temperature of the MIT current jump decreases. We find a monoclinic and electronically correlated metal (MCM) phase between… ▽ More The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing applied voltages, the transition temperature of the MIT current jump decreases. We find a monoclinic and electronically correlated metal (MCM) phase between the abrupt current jump and the structural phase transition (SPT). After the transition from insulator to metal, a linear increase in current (or conductivity) is shown with temperature until the current becomes a constant maximum value above T_{SPT}=68^oC. The SPT is confirmed by micro-Raman spectroscopy measurements. Optical microscopy analysis reveals the absence of the local current path in micro scale in the VO_2 device. The current uniformly flows throughout the surface of the VO_2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor. △ Less

Submitted 2 September, 2006; originally announced September 2006.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letter 90, 023515 (2007)

Monoclinic and Correlated Metal Phase in VO_2 as Evidence of the Mott Transition: Coherent Phonon Analysis

Authors: Hyun-Tak Kim, Yong-Wook Lee, Bong-Jun Kim, Byung-Gyu Chae, Sun ** Yun, Kwang-Yong Kang, Kang-Jeon Han, Ki-Ju Yee, Yong-Sik Lim

Abstract: In femtosecond pump-probe measurements, the appearance of coherent phonon oscillations at 4.5 THz and 6.0 THz indicating the rutile metal phase of VO_2 does not occur simultaneously with the first-order metal-insulator transition (MIT) near 68^oC. The monoclinic and correlated metal(MCM) phase between the MIT and the structural phase transition (SPT) is generated by a photo-assisted hole excitat… ▽ More In femtosecond pump-probe measurements, the appearance of coherent phonon oscillations at 4.5 THz and 6.0 THz indicating the rutile metal phase of VO_2 does not occur simultaneously with the first-order metal-insulator transition (MIT) near 68^oC. The monoclinic and correlated metal(MCM) phase between the MIT and the structural phase transition (SPT) is generated by a photo-assisted hole excitation which is evidence of the Mott transition. The SPT between the MCM phase and the rutile metal phase occurs due to subsequent Joule heating. The MCM phase can be regarded as an intermediate non-equilibrium state. △ Less

Submitted 3 August, 2006; originally announced August 2006.

Comments: 4 pages, 2 figures

Journal ref: Phys. Rev. Lett. 97, 266401 (2006)

Hole-driven MIT theory, Mott transition in VO_2, MoBRiK

Authors: Hyun-Tak Kim, Bong-Jun Kim, Yong Wook Lee, Byung-Gyu Chae, Sun ** Yun, Kwang-Yong Kang

Abstract: For inhomogeneous high-T_c superconductors, hole-driven metal-insulator transition (MIT) theory explains that the gradual increase of conductivity with increasing hole do** is due to inhomogeneity with the local Mott system undergoing the first-order MIT and the local non-Mott system. For VO_2, a monoclinic and correlated metal (MCM) phase showing the linear characteristic as evidence of the M… ▽ More For inhomogeneous high-T_c superconductors, hole-driven metal-insulator transition (MIT) theory explains that the gradual increase of conductivity with increasing hole do** is due to inhomogeneity with the local Mott system undergoing the first-order MIT and the local non-Mott system. For VO_2, a monoclinic and correlated metal (MCM) phase showing the linear characteristic as evidence of the Mott MIT is newly observed by applying electric field and temperature. The structural phase transition occurs between MCM and Rutile metal phases. Devices using the MIT are named MoBRiK. △ Less

Submitted 22 July, 2006; originally announced July 2006.

Comments: 2 pages, 1 figures, This was presented in the 8th International Conference on Materials and Mechanisms of Superconductivity and High Temperature Superconductors (M2S-HTSC-VIII) held in Dresden Germany from July 9 to July 14, 2006

Journal ref: Physica C 460-462 (2007) 1076~1078

Synthesis of VO_2 Nanowire and Observation of the Metal-Insulator Transition

Authors: Sungyoul Choi, Bong-Jun Kim, Yong-Wook Lee, Sun ** Yun, Hyun-Tak Kim

Abstract: We have fabricated crystalline nanowires of VO_2 using a new synthetic method. A nanowire synthesized at 650^oC shows the semiconducting behavior and a nanowire at 670^oC exhibits the first-order metal-insulator transition which is not the one-dimensional property. The temperature coefficient of resistance in the semiconducting nanowire is 7.06 %/K at 300 K, which is higher than that of commerci… ▽ More We have fabricated crystalline nanowires of VO_2 using a new synthetic method. A nanowire synthesized at 650^oC shows the semiconducting behavior and a nanowire at 670^oC exhibits the first-order metal-insulator transition which is not the one-dimensional property. The temperature coefficient of resistance in the semiconducting nanowire is 7.06 %/K at 300 K, which is higher than that of commercial bolometer. △ Less

Submitted 30 June, 2006; originally announced June 2006.

Comments: 3 pages, 4 figures, This was presented in NANOMAT 2006 "International workshop on nanostructed materials" on June 21-23th of 2006 in Antalya/TURKEY

Journal ref: Japanese Journal of Applied Physics 47 (2008) 3296

Josephson effects in MgB2 meta masked ion damage junctions

Authors: D. -J. Kang, N. H. Peng, R. Webb, C. Jeynes, J. H. Yun, S. H. Moon, D. Oh, G. Burnell, E. J. Tarte, D. F. Moore, M. G. Blamire

Abstract: Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB$_{2}$ with T$_{C}$ of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB$_{2}$ metal masked ion damage junctions are presented. This… ▽ More Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB$_{2}$ with T$_{C}$ of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB$_{2}$ metal masked ion damage junctions are presented. This technique is particularly useful for prototy** devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration. △ Less

Submitted 12 June, 2002; originally announced June 2002.

Comments: 12 pages, 4 figures, RevTeX4, submitted to APL

High critical current densities in superconducting MgB2 thin films

Authors: S. H. Moon, J. H. Yun, H. N. Lee, J. I. Kye, H. G. Kim, W. Chung, B. Oh

Abstract: Superconducting MgB2 thin films were prepared on Al2O3(0001) and MgO(100) substrates. Boron thin films were deposited by the electron-beam evaporation followed by post-annealing process with magnesium. Proper post annealing conditions were investigated to grow good superconducting MgB2 thin films. The X-ray diffraction patterns showed randomly orientated growth of MgB2 phase in our thin films. T… ▽ More Superconducting MgB2 thin films were prepared on Al2O3(0001) and MgO(100) substrates. Boron thin films were deposited by the electron-beam evaporation followed by post-annealing process with magnesium. Proper post annealing conditions were investigated to grow good superconducting MgB2 thin films. The X-ray diffraction patterns showed randomly orientated growth of MgB2 phase in our thin films. The surface morphology was examined by scanning electron microscope (SEM) and atomic force microscope (AFM). Critical current density (Jc) measured by transport method was about 10^7 A/cm^2 at 15 K, and superconducting transition temperature (Tc) was ~ 39 K in the MgB2 thin films on Al2O3. △ Less

Submitted 12 April, 2001; originally announced April 2001.

Comments: 13 pages, 4 figures, submitted on Apr. 4, 2001, only one pdf file