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Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal
Authors:
Delin Zhang,
Wei Jiang,
Hwanhui Yun,
Onri Jay Benally,
Thomas Peterson,
Zach Cresswell,
Yihong Fan,
Yang Lv,
Guichuan Yu,
Javier Garcia Barriocanal,
Przemyslaw Swatek,
K. Andre Mkhoyan,
Tony Low,
Jian-** Wang
Abstract:
Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states and topological surface states with intriguing transport properties for spintronics. Here, we fabricate highly-ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputtering technology. Systematic angular dependence (…
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Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states and topological surface states with intriguing transport properties for spintronics. Here, we fabricate highly-ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputtering technology. Systematic angular dependence (both in-plane and out-of-plane) study of magnetoresistance presents surprisingly robust quadratic and linear negative longitudinal magnetoresistance features for Pt3Sn and Pt3SnxFe1-x, respectively. We attribute the anomalous negative longitudinal magnetoresistance to the type-II Dirac semimetal phase (pristine Pt3Sn) and/or the formation of tunable Weyl semimetal phases through symmetry breaking processes, such as magnetic-atom do**, as confirmed by first-principles calculations. Furthermore, Pt3Sn and Pt3SnxFe1-x show the promising performance for facilitating the development of advanced spin-orbit torque devices. These results extend our understanding of chiral anomaly of topological semimetals and can pave the way for exploring novel topological materials for spintronic devices.
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Submitted 9 May, 2023;
originally announced May 2023.
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Mending Cracks in Rutile TiO$_{2}$ with Electron Beam
Authors:
Silu Guo,
Hwanhui Yun,
Sreejith Nair,
Bharat Jalan,
K. Andre Mkhoyan
Abstract:
Restructuring of rutile TiO$_{2}$ under electron beam irradiation driven by radiolysis was observed and analyzed using a combination of atomic-resolution imaging and electron energy loss spectroscopy (EELS) in scanning transmission electron microscopy (STEM). It was determined that a high-energy (80-300 keV) electron beam at high doses ($\gtrapprox 10^7 \ e/nm^2$) can constructively restructure ru…
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Restructuring of rutile TiO$_{2}$ under electron beam irradiation driven by radiolysis was observed and analyzed using a combination of atomic-resolution imaging and electron energy loss spectroscopy (EELS) in scanning transmission electron microscopy (STEM). It was determined that a high-energy (80-300 keV) electron beam at high doses ($\gtrapprox 10^7 \ e/nm^2$) can constructively restructure rutile TiO$_{2}$ with an efficiency of $6\times 10^{-6}$. These observations were realized using rutile TiO$_{2}$ samples with atomically sharp nanometer-wide cracks. Based on atomic-resolution STEM imaging and quantitative EELS analysis, we propose a $"$ 2-step $"$ rolling model of the octahedral building blocks of the crystal to account for observed radiolysis-driven atomic migration.
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Submitted 7 April, 2023;
originally announced April 2023.
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Strain effect on the ground-state structure of Sr2SnO4 Ruddlesden-Popper oxides
Authors:
Hwanhui Yun,
Dominique Gautreau,
K. Andre Mkhoyan,
Turan Birol
Abstract:
Ruddlesden-Popper (RP) oxides (A$_{n+1}$B$_n$O$_{3n+1}$) comprised of perovskite (ABO$_3$)$_n$ slabs can host a wider variety of structural distortions than their perovskite counterparts. This makes accurate structural determination of RP oxides more challenging. In this study, we investigate the structural phase diagram of $n=1$ RP Sr$_2$SnO$_4$, one of alkaline earth stannates that are promising…
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Ruddlesden-Popper (RP) oxides (A$_{n+1}$B$_n$O$_{3n+1}$) comprised of perovskite (ABO$_3$)$_n$ slabs can host a wider variety of structural distortions than their perovskite counterparts. This makes accurate structural determination of RP oxides more challenging. In this study, we investigate the structural phase diagram of $n=1$ RP Sr$_2$SnO$_4$, one of alkaline earth stannates that are promising for opto-electronic applications by using group theory-based symmetry analysis and first-principles calculations. We explore the symmetry breaking effects of different dynamical instabilities, predict the energies of phases they lead to, and take into account different (biaxial strain and hydrostatic pressure) boundary conditions. We also address the effect of structural changes on the electronic structure and find that compressive biaxial strain drives Sr$_2$SnO$_4$ into a regime with wider bandgap and lower electron effective mass.
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Submitted 4 October, 2022; v1 submitted 15 August, 2022;
originally announced August 2022.
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Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor delta-TaN
Authors:
Przemyslaw Wojciech Swatek,
Xudong Hang,
Yihong Fan,
Wei Jiang,
Hwanhui Yun,
Deyuan Lyu,
Delin Zhang,
Thomas J. Peterson,
Protyush Sahu,
Onri Jay Benally,
Zach Cresswell,
**ming Liu,
Rabindra Pahari,
Daniel Kukla,
Tony Low,
K. Andre Mkhoyan,
Jian-** Wang
Abstract:
In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered $δ-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pum** measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 la…
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In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered $δ-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pum** measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 layer attributed to the charge-to-spin conversion generated from the $δ-$TaN layer. Remarkably, the spin-torque efficiency determined from ST-FMR and spin pum** measurements is as large as $Θ =$ 0.034 and 0.031, respectively. These values are over two times larger than for $α-$Ta, but almost five times lower than for $β-$Ta, which can be attributed to the low room temperature electrical resistivity $\sim 74μΩ$ cm in $δ-$TaN. A large spin diffusion length of at least $\sim8$ nm is estimated, which is comparable to the spin diffusion length in pure Ta. Comprehensive experimental analysis, together with density functional theory calculations, indicates that the origin of the pronounced SOT effect in $δ-$TaN can be mostly related to a significant contribution from the Berry curvature associated with the presence of a topically nontrivial electronic band structure in the vicinity of the Fermi level (EF). Through additional detailed theoretical analysis, we also found that an isostructural allotrope of the superconducting $δ-$TaN phase, the simple hexagonal structure, $θ-$TaN, has larger Berry curvature, and that, together with expected reasonable charge conductivity, it can also be a promising candidate for exploring a generation of spin-orbit torque magnetic random access memory as cheap, temperature stable, and highly efficient spin current sources.
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Submitted 29 July, 2022; v1 submitted 18 July, 2022;
originally announced July 2022.
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Co-operative Influence of O2 and H2O in the Degradation of Layered Black Arsenic
Authors:
Mayank Tanwar,
Sagar Udyavara,
Hwanhui Yun,
Supriya Ghosh,
K. Andre Mkhoyan,
Matthew Neurock
Abstract:
Layered black arsenic (b-As) has recently emerged as a new anisotropic two-dimensional (2D) semiconducting material with applications in electronic devices. Understanding factors affecting the ambient stability of this material remains crucial for its applications. Herein we use first-principles density functional theory (DFT) calculations to examine the stability of the (010) and (101) surfaces o…
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Layered black arsenic (b-As) has recently emerged as a new anisotropic two-dimensional (2D) semiconducting material with applications in electronic devices. Understanding factors affecting the ambient stability of this material remains crucial for its applications. Herein we use first-principles density functional theory (DFT) calculations to examine the stability of the (010) and (101) surfaces of b-As in the presence of oxygen (O2) and water (H2O). We show that the (101) surface of b-As can easily oxidize in presence of O2. In the presence of moisture contained in air, the oxidized b-As surfaces favorably react with H2O molecules to volatilize As in the form of As(OH)3 and AsO(OH), which results in the degradation of the b-As surface, predominantly across the (101) surface. These predictions are in good agreement with experimental electron microscopy observations, thus demonstrating the co-operative reactivity of O2 and H2O in the degradation of layered b-As under ambient conditions.
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Submitted 5 July, 2022;
originally announced July 2022.
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Efficient Spin-Orbit Torques in an Antiferromagnetic Insulator with Tilted Easy Plane
Authors:
Pengxiang Zhang,
Chung-Tao Chou,
Hwanhui Yun,
Brooke C. McGoldrick,
Justin T. Hou,
K. Andre Mkhoyan,
Luqiao Liu
Abstract:
Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for develo** spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient spin-orbit-torque-induced switching is however still challenging due to the complicated interactions from different sublattices. Meanwhile, because of the diminishi…
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Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for develo** spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient spin-orbit-torque-induced switching is however still challenging due to the complicated interactions from different sublattices. Meanwhile, because of the diminishing magnetic susceptibility, the nature and the magnitude of current-induced magnetic dynamics remain poorly characterized in antiferromagnets, whereas spurious effects further complicate experimental interpretations. In this work, by growing a thin film antiferromagnetic insulator, α-Fe2O3, along its non-basal plane orientation, we realize a configuration where an injected spin current can robustly rotate the Néel vector within the tilted easy plane, with an efficiency comparable to that of classical ferromagnets. The spin-orbit torque effect stands out among other competing mechanisms and leads to clear switching dynamics. Thanks to this new mechanism, in contrast to the usually employed orthogonal switching geometry, we achieve bipolar antiferromagnetic switching by applying positive and negative currents along the same channel, a geometry that is more practical for device applications. By enabling efficient spin-orbit torque control on the antiferromagnetic ordering, the tilted easy plane geometry introduces a new platform for quantitatively understanding switching and oscillation dynamics in antiferromagnets.
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Submitted 12 January, 2022;
originally announced January 2022.
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Solid Source Metal-Organic Molecular Beam Epitaxy of Epitaxial RuO2
Authors:
William Nunn,
Sreejith Nair,
Hwanhui Yun,
Anusha Kamath Manjeshwar,
Anil Rajapitamahuni,
Dooyong Lee,
K. Andre Mkhoyan,
Bharat Jalan
Abstract:
A seemingly simple oxide with a rutile structure, RuO2 has been shown to possess several intriguing properties ranging from strain-stabilized superconductivity to a strong catalytic activity. Much interest has arisen surrounding the controlled synthesis of RuO2 films but, unfortunately, utilizing atomically-controlled deposition techniques like molecular beam epitaxy (MBE) has been difficult due t…
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A seemingly simple oxide with a rutile structure, RuO2 has been shown to possess several intriguing properties ranging from strain-stabilized superconductivity to a strong catalytic activity. Much interest has arisen surrounding the controlled synthesis of RuO2 films but, unfortunately, utilizing atomically-controlled deposition techniques like molecular beam epitaxy (MBE) has been difficult due to the ultra-low vapor pressure and low oxidation potential of Ru. Here, we demonstrate the growth of epitaxial, single-crystalline RuO2 films on different substrate orientations using the novel solid-source metal-organic (MO) MBE. This approach circumvents these issues by supplying Ru using a pre-oxidized solid metal-organic precursor containing Ru. High-quality epitaxial RuO2 films with bulk-like room-temperature resistivity of 55 micro-ohm-cm were obtained at a substrate temperature as low as 300 C. By combining X-ray diffraction, transmission electron microscopy, and electrical measurements, we discuss the effect of substrate temperature, orientation, film thickness, and strain on the structure and electrical properties of these films. Our results illustrating the use of novel solid-source MOMBE approach paves the way to the atomic-layer controlled synthesis of complex oxides of stubborn metals, which are not only difficult to evaporate but also hard to oxidize.
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Submitted 30 June, 2021;
originally announced July 2021.
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Direct observation and consequences of dopant segregation inside and outside dislocation cores in perovskite BaSnO3
Authors:
Hwanhui Yun,
Abhinav Prakash,
Turan Birol,
Bharat Jalan,
K. Andre Mkhoyan
Abstract:
Distinct dopant behaviors inside and outside dislocation cores are identified by atomic-resolution electron microscopy in perovskite BaSnO3 with considerable consequences on local atomic and electronic structures. Driven by elastic strain, when A-site designated La dopants segregate near a dislocation core, the dopant atoms accumulate at the Ba sites in compressively strained regions. This trigger…
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Distinct dopant behaviors inside and outside dislocation cores are identified by atomic-resolution electron microscopy in perovskite BaSnO3 with considerable consequences on local atomic and electronic structures. Driven by elastic strain, when A-site designated La dopants segregate near a dislocation core, the dopant atoms accumulate at the Ba sites in compressively strained regions. This triggers formation of Ba-vacancies adjacent to the core atomic sites resulting in reconstruction of the core. Notwithstanding the presence of extremely large tensile strain fields, when La atoms segregate inside the dislocation core, they become B-site dopants, replacing Sn atoms and compensating the positive charge of the core oxygen vacancies. Electron energy-loss spectroscopy shows that the local electronic structure of these dislocations changes dramatically due to the segregation of the dopants inside and around the core ranging from formation of strong La-O hybridized electronic states near the conduction band minimum to insulator-to-metal transition.
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Submitted 5 March, 2021;
originally announced March 2021.
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Self-Assembled Periodic Nanostructures Using Martensitic Phase Transformations
Authors:
Abhinav Prakash,
Tianqi Wang,
Ashley Bucsek,
Tristan K. Truttmann,
Alireza Fali,
Michele Cotrufo,
Hwanhui Yun,
Jong-Woo Kim,
Philip J. Ryan,
K. Andre Mkhoyan,
Andrea Alu,
Yohannes Abate,
Richard D. James,
Bharat Jalan
Abstract:
We describe a novel approach for the rational design and synthesis of self-assembled periodic nanostructures using martensitic phase transformations. We demonstrate this approach in a thin film of perovskite SrSnO3 with reconfigurable periodic nanostructures consisting of regularly spaced regions of sharply contrasted dielectric properties. The films can be designed to have different periodicities…
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We describe a novel approach for the rational design and synthesis of self-assembled periodic nanostructures using martensitic phase transformations. We demonstrate this approach in a thin film of perovskite SrSnO3 with reconfigurable periodic nanostructures consisting of regularly spaced regions of sharply contrasted dielectric properties. The films can be designed to have different periodicities and relative phase fractions via chemical do** or strain engineering. The dielectric contrast within a single film can be tuned using temperature and laser wavelength, effectively creating a variable photonic crystal. Our results show the realistic possibility of designing large-area self-assembled periodic structures using martensitic phase transformations with the potential of implementing "built-to-order" nanostructures for tailored optoelectronic functionalities.
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Submitted 13 September, 2020;
originally announced September 2020.
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Sub-micron single-particle perovskite plasmonic nanolasers at room temperature
Authors:
Sangyeon Cho,
Yi Yang,
Marin Soljačić,
Seok Hyun Yun
Abstract:
Plasmonic nanolasers have received a substantial interest for their promising applications in integrated photonics, optical sensing, and biomedical imaging. To date, a room-temperature plasmonic nanolaser, submicron in all dimensions, remains elusive in the visible regime due to high metallic losses. Here, we demonstrate single-particle lasing around 2.3 eV with full-submicron, cesium lead bromide…
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Plasmonic nanolasers have received a substantial interest for their promising applications in integrated photonics, optical sensing, and biomedical imaging. To date, a room-temperature plasmonic nanolaser, submicron in all dimensions, remains elusive in the visible regime due to high metallic losses. Here, we demonstrate single-particle lasing around 2.3 eV with full-submicron, cesium lead bromide perovskite (CsPbBr3) crystals atop polymer-coated gold substrates at room temperature. With a large number (~100) of devices in total, we systematically study the lasing action of plasmonic test and photonic control groups. The achieved smallest plasmonic laser was 0.56 micrometer x 0.58 micrometer x 0.32 micrometer in size, ten-fold smaller than that of our smallest photonic laser. Key elements to efficient plasmonic lasing are identified as enhanced optical gain by the Purcell effect, long carrier diffusivity, a large spontaneous emission factor, and a high group index. Our results shed light on three-dimensional miniaturization of plasmonic lasers.
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Submitted 17 July, 2020;
originally announced July 2020.
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Layer-dependence of dielectric response and water-enhanced ambient degradation of highly-anisotropic black As
Authors:
Hwanhui Yun,
Supriya Ghosh,
Prafful Golani,
Steven J. Koester,
K. Andre Mkhoyan
Abstract:
Black arsenic (BAs) is a van der Waals layered material with a puckered honeycomb structure and has received increased interest due to its anisotropic properties and promising performance in devices. Here, crystalline structure, thickness-dependent dielectric responses, and ambient stability of BAs nanosheets are investigated using STEM imaging and spectroscopy. Atomic-resolution HAADF-STEM images…
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Black arsenic (BAs) is a van der Waals layered material with a puckered honeycomb structure and has received increased interest due to its anisotropic properties and promising performance in devices. Here, crystalline structure, thickness-dependent dielectric responses, and ambient stability of BAs nanosheets are investigated using STEM imaging and spectroscopy. Atomic-resolution HAADF-STEM images directly visualize the three-dimensional structure and evaluate the degree of anisotropy. STEM-EELS is used to measure the dielectric response of BAs as a function of the number of layers. Finally, BAs degradation under different ambient environments is studied highlighting high sensitivity to moisture in the air.
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Submitted 21 February, 2020;
originally announced February 2020.
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Simultaneous multi-region background subtraction for core-level EEL spectra
Authors:
Jacob Held,
Hwanhui Yun,
K. Andre Mkhoyan
Abstract:
We present a multi-region extension of standard power-law background subtraction for core-level EEL spectra to improve the robustness of background removal. This method takes advantage of the post-edge shape of core-loss EEL edges to enable simultaneous and co-dependent fitting of pre- and post-edge background regions. This method also produces simultaneous and consistent background removal from m…
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We present a multi-region extension of standard power-law background subtraction for core-level EEL spectra to improve the robustness of background removal. This method takes advantage of the post-edge shape of core-loss EEL edges to enable simultaneous and co-dependent fitting of pre- and post-edge background regions. This method also produces simultaneous and consistent background removal from multiple edges in a single EEL spectrum. The stability of this method with respect to the fitting energy window is also discussed.
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Submitted 14 June, 2019;
originally announced June 2019.
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STEM beam channeling in BaSnO3/LaAlO3 perovskite bilayers and visualization of 2D misfit dislocation network
Authors:
Hwanhui Yun,
Abhinav Prakash,
Bharat Jalan,
Jong Seok Jeong,
K. Andre Mkhoyan
Abstract:
A study of the STEM probe channeling in a heterostructures crystalline specimen is presented here with a goal to guide appropriate STEM-based characterization for complex structures. STEM analysis of perovskite BaSnO3/LaAlO3 bilayers is performed and the dominating effects of beam channeling on HAADF- and LAADF-STEM are illustrated. To study the electron beam propagating through BaSnO3/LaAlO3 bila…
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A study of the STEM probe channeling in a heterostructures crystalline specimen is presented here with a goal to guide appropriate STEM-based characterization for complex structures. STEM analysis of perovskite BaSnO3/LaAlO3 bilayers is performed and the dominating effects of beam channeling on HAADF- and LAADF-STEM are illustrated. To study the electron beam propagating through BaSnO3/LaAlO3 bilayers, probe intensity depth profiles are calculated, and the effects of probe defocus and atomic column alignment are discussed. Characteristics of the beam channeling are correlated to resulting ADF-STEM images, which is then tested by comparing focal series of plan-view HAADF-STEM images to those recorded experimentally. Additionally, discussions on how to visualize the misfit dislocation network at the BaSnO3/LaAlO3 interface using HAADF- and LAADF-STEM images are provided.
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Submitted 13 June, 2019;
originally announced June 2019.
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Separating Electrons and Donors in BaSnO3 via Band Engineering
Authors:
Abhinav Prakash,
Nicholas F. Quackenbush,
Hwanhui Yun,
Jacob Held,
Tianqi Wang,
Tristan Truttmann,
James M. Ablett,
Conan Weiland,
Tien-Lin Lee,
Joseph C. Woicik,
K. Andre Mkhoyan,
Bharat Jalan
Abstract:
Through a combination of thin film growth, hard X-ray photoelectron spectroscopy (HAXPES), scanning transmission electron microscopy/electron energy loss spectroscopy (STEM/EELS), magneto-transport measurements, and transport modeling, we report on the demonstration of modulation-do** of BaSnO3 (BSO) using a wider bandgap La-doped SrSnO3 (LSSO) layer. Hard X-ray photoelectron spectroscopy (HAXPE…
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Through a combination of thin film growth, hard X-ray photoelectron spectroscopy (HAXPES), scanning transmission electron microscopy/electron energy loss spectroscopy (STEM/EELS), magneto-transport measurements, and transport modeling, we report on the demonstration of modulation-do** of BaSnO3 (BSO) using a wider bandgap La-doped SrSnO3 (LSSO) layer. Hard X-ray photoelectron spectroscopy (HAXPES) revealed a valence band offset of 0.71 +/- 0.02 eV between LSSO and BSO resulting in a favorable conduction band offset for remote do** of BSO using LSSO. Nonlinear Hall effect of LSSO/BSO heterostructure confirmed two-channel conduction owing to electron transfer from LSSO to BSO and remained in good agreement with the results of self-consistent solution to one-dimensional Poisson and Schrödinger equations. Angle-dependent HAXPES measurements revealed a spatial distribution of electrons over 2-3 unit cells in BSO. These results bring perovskite oxides a step closer to room-temperature oxide electronics by establishing modulation-do** approaches in non-SrTiO3-based oxide heterostructure.
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Submitted 11 May, 2019;
originally announced May 2019.
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Electronic structure of BaSnO3 investigated by high-energy-resolution electron energy-loss spectroscopy and ab initio calculations
Authors:
Hwanhui Yun,
Mehmet Topsakal,
Abhinav Prakash,
Koustav Ganguly,
Chris Leighton,
Bharat Jalan,
Renata M. Wentzcovitch,
K. Andre Mkhoyan,
Jong Seok Jeong
Abstract:
There has been growing interest in perovskite BaSnO3 due to its desirable properties for oxide electronic devices including high electron mobility at room temperature and optical transparency. As these electronic and optical properties originate largely from the electronic structure of the material, here the basic electronic structure of epitaxially-grown BaSnO3 films is studied using high-energy-…
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There has been growing interest in perovskite BaSnO3 due to its desirable properties for oxide electronic devices including high electron mobility at room temperature and optical transparency. As these electronic and optical properties originate largely from the electronic structure of the material, here the basic electronic structure of epitaxially-grown BaSnO3 films is studied using high-energy-resolution electron energy-loss spectroscopy in a transmission electron microscope and ab initio calculations. This study provides a detailed description of the dielectric function of BaSnO3, including the energies of bulk plasmon excitations and critical interband electronic transitions, the band structure and partial densities of states, the measured band gap, and more. To make the study representative of a variety of deposition methods, results from BaSnO3 films grown by both hybrid molecular beam epitaxy and high pressure oxygen sputter deposition are reported.
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Submitted 28 November, 2016;
originally announced November 2016.
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Breakdown of the interlayer coherence in twisted bilayer graphene
Authors:
Youngwook Kim,
Hoyeol Yun,
Seung-Geol Nam,
Minhyeok Son,
Dong Su Lee,
Dong Chul Kim,
S. Seo,
Hee Cheul Choi,
Hu-Jong Lee,
Sang Wook Lee,
Jun Sung Kim
Abstract:
Coherent motion of the electrons in the Bloch states is one of the fundamental concepts of the charge conduction in solid state physics. In layered materials, however, such a condition often breaks down for the interlayer conduction, when the interlayer coupling is significantly reduced by e.g. large interlayer separation. We report that complete suppression of coherent conduction is realized even…
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Coherent motion of the electrons in the Bloch states is one of the fundamental concepts of the charge conduction in solid state physics. In layered materials, however, such a condition often breaks down for the interlayer conduction, when the interlayer coupling is significantly reduced by e.g. large interlayer separation. We report that complete suppression of coherent conduction is realized even in an atomic length scale of layer separation in twisted bilayer graphene. The interlayer resistivity of twisted bilayer graphene is much higher than the c-axis resistivity of Bernal-stacked graphite, and exhibits strong dependence on temperature as well as on external electric fields. These results suggest that the graphene layers are significantly decoupled by rotation and incoherent conduction is a main transport channel between the layers of twisted bilayer graphene.
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Submitted 15 June, 2012;
originally announced June 2012.
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Analysis of Laser ARPES from Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ in superconductive state: angle resolved self-energy and fluctuation spectrum
Authors:
Jae Hyun Yun,
** Mo Bok,
Han-Yong Choi,
Wentao Zhang,
X. J. Zhou,
Chandra M. Varma
Abstract:
We analyze the ultra high resolution laser angle resolved photo-emission spectroscopy (ARPES) intensity from the slightly underdoped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ in the superconductive (SC) state. The momentum distribution curves (MDC) were fitted at each energy $\w$ employing the SC Green's function along several cuts perpendicular to the Fermi surface with the tilt angle $θ$ with respect to the…
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We analyze the ultra high resolution laser angle resolved photo-emission spectroscopy (ARPES) intensity from the slightly underdoped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ in the superconductive (SC) state. The momentum distribution curves (MDC) were fitted at each energy $\w$ employing the SC Green's function along several cuts perpendicular to the Fermi surface with the tilt angle $θ$ with respect to the nodal cut. The clear observation of particle-hole mixing was utilized such that the complex self-energy as a function of $ω$ is directly obtained from the fitting. The obtained angle resolved self-energy is then used to deduce the Eliashberg function $α^2 F^{(+)}(þ,\w)$ in the diagonal channel by inverting the d-wave Eliashberg equation using the maximum entropy method. Besides a broad featureless spectrum up to the cutoff energy $ω_c$, the deduced $α^2 F$ exhibits two peaks around 0.05 eV and 0.015 eV. The former and the broad feature are already present in the normal state, while the latter emerges only below $T_c$. Both peaks become enhanced as $T$ is lowered or the angle $þ$ moves away from the nodal direction. The implication of these findings are discussed.
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Submitted 28 September, 2011; v1 submitted 8 August, 2011;
originally announced August 2011.
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Extraction of Electron Self-Energy and Gap Function in the Superconducting State of Bi_2Sr_2CaCu_2O_8 Superconductor via Laser-Based Angle-Resolved Photoemission
Authors:
Wentao Zhang,
** Mo Bok,
Jae Hyun Yun,
Junfeng He,
Guodong Liu,
Lin Zhao,
Haiyun Liu,
Jianqiao Meng,
Xiaowen Jia,
Yingying Peng,
Daixiang Mou,
Shanyu Liu,
Li Yu,
Shaolong He,
Xiaoli Dong,
Jun Zhang,
J. S. Wen,
Z. J. Xu,
G. D. Gu,
Guiling Wang,
Yong Zhu,
Xiaoyang Wang,
Qinjun Peng,
Zhimin Wang,
Shen** Zhang
, et al. (6 additional authors not shown)
Abstract:
Super-high resolution laser-based angle-resolved photoemission measurements have been performed on a high temperature superconductor Bi_2Sr_2CaCu_2O_8. The band back-bending characteristic of the Bogoliubov-like quasiparticle dispersion is clearly revealed at low temperature in the superconducting state. This makes it possible for the first time to experimentally extract the complex electron self-…
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Super-high resolution laser-based angle-resolved photoemission measurements have been performed on a high temperature superconductor Bi_2Sr_2CaCu_2O_8. The band back-bending characteristic of the Bogoliubov-like quasiparticle dispersion is clearly revealed at low temperature in the superconducting state. This makes it possible for the first time to experimentally extract the complex electron self-energy and the complex gap function in the superconducting state. The resultant electron self-energy and gap function exhibit features at ~54 meV and ~40 meV, in addition to the superconducting gap-induced structure at lower binding energy and a broad featureless structure at higher binding energy. These information will provide key insight and constraints on the origin of electron pairing in high temperature superconductors.
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Submitted 18 March, 2011;
originally announced March 2011.
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Momentum Dependence of the Single-Particle Self-Energy and Fluctuation Spectrum of Slightly Underdoped Bi_2 Sr_2 CaCu_2 O_{8+δ} from High Resolution Laser ARPES
Authors:
** Mo Bok,
Jae Hyun Yun,
Han-Yong Choi,
Wentao Zhang,
X. J. Zhou,
Chandra M. Varma
Abstract:
We deduce the normal state angle-resolved single-particle self-energy $Σ(θ, ω)$ and the Eliashberg function (i.e., the product of the fluctuation spectrum and its coupling to fermions) $α^2 F(θ,ω)$ for the high temperature superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ from the ultra high resolution laser angle-resolved photoemission spectroscopy (ARPES). The self-energy $Σ(θ, ω)$ at energy $ω$ alon…
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We deduce the normal state angle-resolved single-particle self-energy $Σ(θ, ω)$ and the Eliashberg function (i.e., the product of the fluctuation spectrum and its coupling to fermions) $α^2 F(θ,ω)$ for the high temperature superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ from the ultra high resolution laser angle-resolved photoemission spectroscopy (ARPES). The self-energy $Σ(θ, ω)$ at energy $ω$ along several cuts normal to the Fermi surface at the tilt angles $θ$ with respect to the nodal direction in a slightly underdoped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ were extracted by fitting the ARPES momentum distribution curves. Then, using the extracted self-energy as the experimental input, the $α^2 F(θ,ω)$ is deduced by inverting the Eliashberg equation employing the adaptive maximum entropy method. Our principal new result is that the Eliashberg function $α^2F(θ,ω)$ collapse for all $θ$ onto a single function of $ω$ up to the upper cut-off energy despite the $θ$ dependence of the self-energy. The in-plane momentum anisotropy is therefore predominantly due to the anisotropic band dispersion effects. The obtained Eliashberg function has a small peak at $ω\approx0.05$ eV and flattens out above 0.1 eV up to the angle-dependent cut-off. It takes the intrinsic cut-off of about 0.4 eV or the energy of the bottom of the band with respect to the Fermi energy in the direction $θ$, whichever is lower. The angle independence of the $α^2 F(θ,ω)$ is consistent only with the fluctuation spectra which have the short correlation length on the scale the lattice constant. This implies among others that the antiferromagnetic fluctuations may not be underlying physics of the deduced fluctuation spectrum.
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Submitted 30 April, 2010; v1 submitted 1 December, 2009;
originally announced December 2009.
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Model for the inverse isotope effect of FeAs-based superconductors in the $π$-phase-shifted pairing state
Authors:
Han-Yong Choi,
Jae Hyun Yun,
Yunkyu Bang,
Hyun C. Lee
Abstract:
The isotope effects for Fe based superconductors are considered by including the phonon and magnetic fluctuations within the two band Eliashberg theory. We show that the recently observed inverse isotope effects of Fe, $α_{Fe} \approx -0.18 \pm 0.03 $,\cite{Shirage0903.3515} as well as the large positive isotope exponent ($α\approx 0.35$) can naturally arise for the magnetically induced sign rev…
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The isotope effects for Fe based superconductors are considered by including the phonon and magnetic fluctuations within the two band Eliashberg theory. We show that the recently observed inverse isotope effects of Fe, $α_{Fe} \approx -0.18 \pm 0.03 $,\cite{Shirage0903.3515} as well as the large positive isotope exponent ($α\approx 0.35$) can naturally arise for the magnetically induced sign revered s-wave pairing state within reasonable parameter range. Either experimental report can not be discarded from the present analysis based on the parameter values they require. The inverse and positive isotope effects mean, respectively, the interband and intraband dominant eletron-phonon interaction. We first make our points based on the analytic result from the square well potential model and present explicit numerical calculations of the two band Eliashberg theory.
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Submitted 18 August, 2009; v1 submitted 12 April, 2009;
originally announced April 2009.
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Point contact spectroscopy of Pr$_{2-x}$Ce$_x$CuO$_4$ in high magnetic fields
Authors:
Sung Hee Yun,
Neesha Anderson,
Bing Liang,
R. L. Greene,
Amlan Biswas
Abstract:
We have studied the density of states of the normal state of the electron-doped superconductor Pr$_{2-x}$Ce$_x$CuO$_4$ at low temperatures and in magnetic fields up to 31 Tesla using point contact spectroscopy on single crystals. Our data clearly reveal an anomalous gap in the normal state density of states. This normal state gap survives even in the highest applied field of 31 T. Our results ca…
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We have studied the density of states of the normal state of the electron-doped superconductor Pr$_{2-x}$Ce$_x$CuO$_4$ at low temperatures and in magnetic fields up to 31 Tesla using point contact spectroscopy on single crystals. Our data clearly reveal an anomalous gap in the normal state density of states. This normal state gap survives even in the highest applied field of 31 T. Our results cast doubt over whether this gap found in electron-doped cuprates is the analog of the pseudogap in hole-doped cuprates. We have suggested an alternate origin of the normal state gap, which involves the effect of disorder and electron correlations at the surface of cuprates.
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Submitted 10 December, 2007;
originally announced December 2007.
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Phonon-assisted tunneling in an isolated double dot system
Authors:
J. Martorell,
D. W. L. Sprung,
Guo Hong Yun
Abstract:
Phonon-assisted tunneling rates are evaluated for a well isolated double dot system defined in a GaAs semiconductor heterostructure of finite thickness. A separable model for the confining potential allows accurate determinations of doublet electron wavefunctions and energies. It is found that at small doublet energies the piezoelectric rates due to flexural modes give the dominant contribution.…
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Phonon-assisted tunneling rates are evaluated for a well isolated double dot system defined in a GaAs semiconductor heterostructure of finite thickness. A separable model for the confining potential allows accurate determinations of doublet electron wavefunctions and energies. It is found that at small doublet energies the piezoelectric rates due to flexural modes give the dominant contribution. For small slab thicknesses the predicted rates are up to two orders of magnitude higher than for very thick slabs.
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Submitted 14 May, 2005; v1 submitted 22 March, 2005;
originally announced March 2005.
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Josephson effects in MgB2 meta masked ion damage junctions
Authors:
D. -J. Kang,
N. H. Peng,
R. Webb,
C. Jeynes,
J. H. Yun,
S. H. Moon,
D. Oh,
G. Burnell,
E. J. Tarte,
D. F. Moore,
M. G. Blamire
Abstract:
Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB$_{2}$ with T$_{C}$ of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB$_{2}$ metal masked ion damage junctions are presented. This…
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Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB$_{2}$ with T$_{C}$ of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB$_{2}$ metal masked ion damage junctions are presented. This technique is particularly useful for prototy** devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration.
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Submitted 12 June, 2002;
originally announced June 2002.
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High critical current densities in superconducting MgB2 thin films
Authors:
S. H. Moon,
J. H. Yun,
H. N. Lee,
J. I. Kye,
H. G. Kim,
W. Chung,
B. Oh
Abstract:
Superconducting MgB2 thin films were prepared on Al2O3(0001) and MgO(100) substrates. Boron thin films were deposited by the electron-beam evaporation followed by post-annealing process with magnesium. Proper post annealing conditions were investigated to grow good superconducting MgB2 thin films. The X-ray diffraction patterns showed randomly orientated growth of MgB2 phase in our thin films. T…
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Superconducting MgB2 thin films were prepared on Al2O3(0001) and MgO(100) substrates. Boron thin films were deposited by the electron-beam evaporation followed by post-annealing process with magnesium. Proper post annealing conditions were investigated to grow good superconducting MgB2 thin films. The X-ray diffraction patterns showed randomly orientated growth of MgB2 phase in our thin films. The surface morphology was examined by scanning electron microscope (SEM) and atomic force microscope (AFM). Critical current density (Jc) measured by transport method was about 10^7 A/cm^2 at 15 K, and superconducting transition temperature (Tc) was ~ 39 K in the MgB2 thin films on Al2O3.
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Submitted 12 April, 2001;
originally announced April 2001.
