Surface passivation of FAPbI3-rich perovskite with caesium iodide outperforms bulk incorporation
Authors:
Thomas P. Baumeler,
Essa A. Alharbi,
George Kakavelakis,
George C. Fish,
Mubarak T. Aldosari,
Miqad S. Albishi,
Lukas Pfeifer,
Brian I. Carlsen,
Jun-Ho Yum,
Abdullah S. Alharbi,
Mounir D. Mensi,
**g Gao,
Felix T. Eickemeyer,
Kevin Sivula,
Jacques-Edouard Moser,
Shaik M. Zakeeruddin,
Michael Graetzel
Abstract:
Metal halide perovskites (MHPs) have shown an incredible rise in efficiency, reaching as high as 25.7%, which now competes with traditional photovoltaic technologies. Herein, we excluded CsX and RbX, the most commonly used cations to stabilize FAPbI3, from the bulk of perovskite thin films and applied them on the surface, as passivation agents. Extensive device optimization led to a power conversi…
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Metal halide perovskites (MHPs) have shown an incredible rise in efficiency, reaching as high as 25.7%, which now competes with traditional photovoltaic technologies. Herein, we excluded CsX and RbX, the most commonly used cations to stabilize FAPbI3, from the bulk of perovskite thin films and applied them on the surface, as passivation agents. Extensive device optimization led to a power conversion efficiency (PCE) of 24.1% with a high fill factor (FF) of 82.2% upon passivation with CsI. We investigated in-depth the effect of CsI passivation on structural and optoelectronic properties using X-ray diffraction (XRD), angle resolved X-ray photoelectron spectroscopy (ARXPS), Kelvin Probe Force (KPFM) microscopy, time-resolved photoluminescence (TRPL), photoluminescence quantum yield (PLQY) and electroabsorption spectroscopy (TREAS). Furthermore, passivated devices exhibit enhanced operational stability, with optimized passivation with CsI leading to a retention of ~90% of initial PCE under 1 Sun illumination with maximum power point tracking for 600 h.
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Submitted 25 April, 2023;
originally announced April 2023.
Evidence for hydrogen two-level systems in atomic layer deposition oxides
Authors:
M. S. Khalil,
M. J. A. Stoutimore,
S. Gladchenko,
A. M. Holder,
C. B. Musgrave,
A. C. Kozen,
G. Rubloff,
Y. Q. Liu,
R. G. Gordon,
J. H. Yum,
S. K. Banerjee,
C. J. Lobb,
K. D. Osborn
Abstract:
Two-level system (TLS) defects in dielectrics are known to limit the performance of electronic devices. We study TLS using millikelvin microwave loss measurements of three atomic layer deposited (ALD) oxide films--crystalline BeO ($\rm{c-BeO}$), amorphous $\rm{Al_2O_3}$ ($\rm{a-Al_2O_3}$), and amorphous $\rm{LaAlO_3}$ ($\rm{a-LaAlO_3}$)--and interpret them with room temperature characterization me…
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Two-level system (TLS) defects in dielectrics are known to limit the performance of electronic devices. We study TLS using millikelvin microwave loss measurements of three atomic layer deposited (ALD) oxide films--crystalline BeO ($\rm{c-BeO}$), amorphous $\rm{Al_2O_3}$ ($\rm{a-Al_2O_3}$), and amorphous $\rm{LaAlO_3}$ ($\rm{a-LaAlO_3}$)--and interpret them with room temperature characterization measurements. We find that the bulk loss tangent in the crystalline film is 6 times higher than in the amorphous films. In addition, its power saturation agrees with an amorphous distribution of TLS. Through a comparison of loss tangent data to secondary ion mass spectrometry (SIMS) impurity analysis we find that the dominant loss in all film types is consistent with hydrogen-based TLS. In the amorphous films excess hydrogen is found at the ambient-exposed surface, and we extract the associated hydrogen-based surface loss tangent. Data from films with a factor of 40 difference in carbon impurities revealed that carbon is currently a negligible contributor to TLS loss.
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Submitted 29 July, 2013;
originally announced July 2013.
