Showing 1–50 of 123 results for author: Yu, K

Direct Observation of Dendrites Nucleation in Li Metal Battery by Machine Learning Accelerated Molecular Simulations under Realistic Electrochemical Conditions

Authors: Tai** Hu, Haichao Huang, Guobing Zhou, Xinyan Wang, Zheng Cheng, Fangjia Fu, Xiaoxu Wang, Fuzhi Dai, Kuang Yu, Shenzhen Xu

Abstract: Uncontrollable dendrites growth during electrochemical cycles leads to low Coulombic efficiency and critical safety issues in Li metal batteries. Hence, a comprehensive understanding of the dendrite formation mechanism is essential for further enhancing the performance of Li metal batteries. Machine learning accelerated molecular dynamics (MD) simulations can provide atomic-scale resolution for va… ▽ More Uncontrollable dendrites growth during electrochemical cycles leads to low Coulombic efficiency and critical safety issues in Li metal batteries. Hence, a comprehensive understanding of the dendrite formation mechanism is essential for further enhancing the performance of Li metal batteries. Machine learning accelerated molecular dynamics (MD) simulations can provide atomic-scale resolution for various key processes at an ab-initio level accuracy. However, traditional MD simulation tools hardly capture Li electrochemical depositions, due to lack of an electrochemical constant potential (ConstP) condition. In this work, we propose a ConstP approach that combines a machine learning force field with the charge equilibration method to reveal the dynamic process of Li dendrites nucleation at Li metal anode surfaces. Our results show that both dead Li cluster formation and inhomogeneous Li electro-depositions can induce Li dendrites nucleation. We further reveal that the local aggregation of Li atoms in amorphous inorganic components of solid electrolyte interphase is the key factor triggering the nucleation process. Overall, our simulations provide microscopic insights for Li dendrites formations in Li metal anodes. More importantly, we present an efficient and accurate simulation method for modeling realistic ConstP conditions, which holds considerable potential for broader applications in modeling of complex electrochemical interfaces. △ Less

Submitted 3 July, 2024; v1 submitted 20 June, 2024; originally announced June 2024.

Shubnikov-de Haas oscillations of biaxial-strain-tuned superconductors in pulsed magnetic field up to 60 T

Authors: King Yau Yip, Lingfei Wang, Tsz Fung Poon, Kai Ham Yu, Siu Tung Lam, Kwing To Lai, John Singleton, Fedor F. Balakirev, Swee K. Goh

Abstract: Two-dimensional (2D) materials have gained increasing prominence not only in fundamental research but also in daily applications. However, to fully harness their potential, it is crucial to optimize their properties with an external parameter and track the electronic structure simultaneously. Magnetotransport over a wide magnetic field range is a powerful method to probe the electronic structure a… ▽ More Two-dimensional (2D) materials have gained increasing prominence not only in fundamental research but also in daily applications. However, to fully harness their potential, it is crucial to optimize their properties with an external parameter and track the electronic structure simultaneously. Magnetotransport over a wide magnetic field range is a powerful method to probe the electronic structure and, for metallic 2D materials, quantum oscillations superimposed on the transport signals encode Fermi surface parameters. In this manuscript, we utilize biaxial strain as an external tuning parameter and investigate the effects of strain on the electronic properties of two quasi-2D superconductors, MoTe$_2$ and RbV$_3$Sb$_5$, by measuring their magnetoresistance in pulsed magnetic fields up to 60 T. With a careful selection of insulating substrates, we demonstrate the possibility of both the compressive and tensile biaxial strain, imposed on MoTe$_2$ and RbV$_3$Sb$_5$, respectively. For both systems, the applied strain has led to superconducting critical temperature enhancement compared to their free-standing counterparts, proving the effectiveness of this biaxial strain method at cryogenic temperatures. Clear quantum oscillations in the magnetoresistance -- the Shubnikov-de Haas (SdH) effect -- are obtained in both samples. In strained MoTe$_2$, the magnetoresistance exhibits a nearly quadratic dependence on the magnetic field and remains non-saturating even at the highest field. Whereas in strained RbV$_3$Sb$_5$, two SdH frequencies showed a substantial enhancement in effective mass values, hinting at a possible enhancement of charge fluctuations. Our results demonstrate that combining biaxial strain and pulsed magnetic field paves the way for studying 2D materials under unprecedented conditions. △ Less

Submitted 22 February, 2024; originally announced February 2024.

Comments: 6 pages, 4 figures

Journal ref: APL Mater. 12, 021124 (2024)

Enhancing quantum utility: simulating large-scale quantum spin chains on superconducting quantum computers

Authors: Talal Ahmed Chowdhury, Kwangmin Yu, Mahmud Ashraf Shamim, M. L. Kabir, Raza Sabbir Sufian

Abstract: We present the quantum simulation of the frustrated quantum spin-$\frac{1}{2}$ antiferromagnetic Heisenberg spin chain with competing nearest-neighbor $(J_1)$ and next-nearest-neighbor $(J_2)$ exchange interactions in the real superconducting quantum computer with qubits ranging up to 100. In particular, we implement, for the first time, the Hamiltonian with the next-nearest neighbor exchange inte… ▽ More We present the quantum simulation of the frustrated quantum spin-$\frac{1}{2}$ antiferromagnetic Heisenberg spin chain with competing nearest-neighbor $(J_1)$ and next-nearest-neighbor $(J_2)$ exchange interactions in the real superconducting quantum computer with qubits ranging up to 100. In particular, we implement, for the first time, the Hamiltonian with the next-nearest neighbor exchange interaction in conjunction with the nearest neighbor interaction on IBM's superconducting quantum computer and carry out the time evolution of the spin chain by employing first-order Trotterization. Furthermore, our novel implementation of second-order Trotterization for the isotropic Heisenberg spin chain, involving only nearest-neighbor exchange interaction, enables precise measurement of the expectation values of staggered magnetization observable across a range of up to 100 qubits. Notably, in both cases, our approach results in a constant circuit depth in each Trotter step, independent of the initial number of qubits. Our demonstration of the accurate measurement of expectation values for the large-scale quantum system using superconducting quantum computers designates the quantum utility of these devices for investigating various properties of many-body quantum systems. This will be a step** stone to achieving the quantum advantage over classical ones in simulating quantum systems before the fault tolerance quantum era. △ Less

Submitted 18 March, 2024; v1 submitted 19 December, 2023; originally announced December 2023.

Comments: 26 pages + references, 11 figures, improved results for cases with 20 qubits and discussion in section 5, added Appendix A and C, and references

Design monolayer iodinenes based on halogen bond and tiling theory

Authors: Kejun Yu, Botao Fu, Runwu Zhang, Da-shuai Ma, ** Li, Zhi-Ming Yu, Cheng-Cheng Liu, Yugui Yao

Abstract: Xenes, two-dimensional (2D) monolayers composed of a single element, with graphene as a typical representative, have attracted widespread attention. Most of the previous Xenes, X from group-IIIA to group-VIA elements have bonding characteristics of covalent bonds. In this work, we for the first time unveil the pivotal role of a halogen bond, which is a distinctive type of bonding with interaction… ▽ More Xenes, two-dimensional (2D) monolayers composed of a single element, with graphene as a typical representative, have attracted widespread attention. Most of the previous Xenes, X from group-IIIA to group-VIA elements have bonding characteristics of covalent bonds. In this work, we for the first time unveil the pivotal role of a halogen bond, which is a distinctive type of bonding with interaction strength between that of a covalent bond and a van der Waals interaction, in 2D group-VIIA monolayers. Combing the ingenious non-edge-to-edge tiling theory and state-of-art ab initio method with refined local density functional M06-L, we provide a precise and effective bottom-up construction of 2D iodine monolayer sheets, iodinenes, primarily governed by halogen bonds, and successfully design a category of stable iodinenes, encompassing herringbone, Pythagorean, gyrated truncated hexagonal, i.e. diatomic-kagome, and gyrated hexagonal tiling pattern. These iodinene structures exhibit a wealth of properties, such as flat bands, nontrivial topology, and fascinating optical characteristics, offering valuable insights and guidance for future experimental investigations. Our work not only unveils the unexplored halogen bonding mechanism in 2D materials but also opens a new avenue for designing other non-covalent bonding 2D materials. △ Less

Submitted 28 October, 2023; v1 submitted 12 September, 2023; originally announced September 2023.

Comments: 6 pages, 4 figures

Ultra-high mobility semiconducting epitaxial graphene on silicon carbide

Authors: Jian Zhao, Peixun Ji, Yaqi Li, Rui Li, Kaiming Zhang, Hao Tian, Kaichen Yu, Boyue Bian, Luzhen Hao, Xue Xiao, Will Griffin, Noel Dudeck, Ramiro Moro, Lei Ma, Walt A. de Heer

Abstract: Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene la… ▽ More Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene layer forms on the surfaces [2]. The first epigraphene layer to form on the silicon terminated face, known as the buffer layer, is insulating. It is chemically bonded to the SiC and spectroscopic measurements [3] have identified semiconducting signatures on the microscopic domains. However, the bonding to the SiC is disordered and the mobilities are small. Here we demonstrate a quasi-equilibrium annealing method that produces macroscopic atomically flat terraces covered with a well ordered epigraphene buffer layer that has a 0.6 eV bandgap. Room temperature mobilities exceed 5000 cm2/Vs which is much larger than silicon and 20 times larger than the phonon scattering imposed limit of current 2D semiconductors. Critical for nanotechnology, its lattice is aligned with the SiC substrate, it is chemically, mechanically, and thermally robust, and it can be conventionally patterned and seamlessly connected to semimetallic epigraphene making semiconducting epigraphene ideally suited for nanoelectronics. △ Less

Submitted 23 August, 2023; originally announced August 2023.

Comments: Text and figures + supplemental information

Tailoring the ferromagnetic surface potential landscape by a templating two-dimensional metal-organic porous network

Authors: Lu Lyu, Martin Anstett, Ka Man Yu, Azadeh Kadkhodazadeh, Martin Aeschlimann, Benjamin Stadtmüller

Abstract: Two-dimensional metal-organic porous networks (2D-MOPNs) have been identified as versatile nanoarchitectures to tailor surface electronic and magnetic properties on noble metals. In this context, we propose a protocol to redecorate a ferromagnetic surface potential landscape using a 2D-MOPN. Ultrathin cobalt (Co) films grown on Au(111) exhibit a well-ordered surface triangular reconstruction. On t… ▽ More Two-dimensional metal-organic porous networks (2D-MOPNs) have been identified as versatile nanoarchitectures to tailor surface electronic and magnetic properties on noble metals. In this context, we propose a protocol to redecorate a ferromagnetic surface potential landscape using a 2D-MOPN. Ultrathin cobalt (Co) films grown on Au(111) exhibit a well-ordered surface triangular reconstruction. On the ferromagnetic surface, the adsorbed 2,4,6-tris(4-pyridyl)-1,3,5triazine (T4PT) molecules can coordinate with the native Co atoms to form a large-scale Co-T4PT porous network. The Co-T4PT network with periodic nanocavities serves as a templating layer to reshape the ferromagnetic surface potential. The subsequently deposited C60 molecules are steered by the network porous potential and the neighboring C60 interactions. The prototype of the ferromagnetic-supported 2D-MOPN is a promising template for the tailoring of molecular electronic and spin properties. △ Less

Submitted 13 July, 2023; originally announced July 2023.

Proton Collective Quantum Tunneling Induces Anomalous Thermal Conductivity of Ice under Pressure

Authors: Yufeng Wang, Ripeng Luo, Jian Chen, Xuefeng Zhou, Shanmin Wang, Junqiao Wu, Feiyu Kang, Kuang Yu, Bo Sun

Abstract: Proton tunneling is believed to be non-local in ice but has never been shown experimentally. Here we measured thermal conductivity of ice under pressure up to 50 GPa and found it to increase with pressure until 20 GPa but decrease at higher pressures. We attribute this anomalous drop of thermal conductivity to the collective tunneling of protons at high pressures, supported by large-scale quantum… ▽ More Proton tunneling is believed to be non-local in ice but has never been shown experimentally. Here we measured thermal conductivity of ice under pressure up to 50 GPa and found it to increase with pressure until 20 GPa but decrease at higher pressures. We attribute this anomalous drop of thermal conductivity to the collective tunneling of protons at high pressures, supported by large-scale quantum molecular dynamics simulations. The collective tunneling loops span several picoseconds in time and are as large as nanometers in space, which match the phonon periods and wavelengths, leading to strong phonon scattering at high pressures. Our results show direct evidence of collective quantum motion existing in high-pressure ice and provide a new perspective to understanding the coupling between phonon propagation and atomic tunneling. △ Less

Submitted 25 May, 2023; originally announced May 2023.

Drastic enhancement of the superconducting temperature in type-II Weyl semimetal candidate MoTe$_2$ via biaxial strain

Authors: King Yau Yip, Siu Tung Lam, Kai Ham Yu, Wing Shing Chow, Jiayu Zeng, Kwing To Lai, Swee K. Goh

Abstract: Type-II Weyl semimetal candidate MoTe$_2$, which superconducts at T_c~0.1 K, is one of the promising candidates for realizing topological superconductivity. However, the exceedingly low $T_c$ is associated with a small upper critical field ($H_{c2}$), implying a fragile superconducting phase that only exists on a small region of the $H$-$T$ phase diagram. Here, we describe a simple and versatile a… ▽ More Type-II Weyl semimetal candidate MoTe$_2$, which superconducts at T_c~0.1 K, is one of the promising candidates for realizing topological superconductivity. However, the exceedingly low $T_c$ is associated with a small upper critical field ($H_{c2}$), implying a fragile superconducting phase that only exists on a small region of the $H$-$T$ phase diagram. Here, we describe a simple and versatile approach based on the differential thermal expansion between dissimilar materials to subject a thin single crystalline MoTe$_2$ to biaxial strain. With this approach, we successfully enhance the $T_c$ of MoTe$_2$ five-fold and consequently expand the superconducting region on the $H$-$T$ phase diagram significantly. To demonstrate the relative ease of studying the superconductivity in the biaxially strained MoTe$_2$, we further present the magnetotransport data, enabling the study of the temperature-dependent $H_{c2}$ and the anisotropy of the superconducting state which would otherwise be difficult to obtain in a free-standing MoTe$_2$. Our work shows that biaxial strain is an effective knob to tune the electronic properties of MoTe$_2$. Due to the simplicity of our methodology to apply biaxial strain, we anticipate its direct applicability to a wider class of quantum materials. △ Less

Submitted 7 February, 2023; v1 submitted 6 February, 2023; originally announced February 2023.

Comments: 6 pages, 4 figures. Reference list updated. APL Materials (in press)

Journal ref: APL Materials 11, 021111 (2023)

Probing the Evolution of Electron Spin Wavefunction of NV Center in diamond via Pressure Tuning

Authors: Kin On Ho, Man Yin Leung, P. Reddy, Jianyu Xie, King Cho Wong, Yaxin Jiang, Wei Zhang, King Yau Yip, Wai Kuen Leung, Yiu Yung Pang, King Yiu Yu, Swee K. Goh, M. W. Doherty, Sen Yang

Abstract: Understanding the profile of a qubit's wavefunction is key to its quantum applications. Unlike conducting systems, where a scanning tunneling microscope can be used to probe the electron distribution, there is no direct method for solid-state-defect based qubits in wide-bandgap semiconductors. In this work, we use pressure as a tuning method and a nuclear spin as an atomic scale probe to monitor t… ▽ More Understanding the profile of a qubit's wavefunction is key to its quantum applications. Unlike conducting systems, where a scanning tunneling microscope can be used to probe the electron distribution, there is no direct method for solid-state-defect based qubits in wide-bandgap semiconductors. In this work, we use pressure as a tuning method and a nuclear spin as an atomic scale probe to monitor the hyperfine structure of negatively charged nitrogen vacancy (NV) centers in diamonds under pressure. We present a detailed study on the nearest-neighbor $^{13}C$ hyperfine splitting in the optically detected magnetic resonance (ODMR) spectrum of NV centers at different pressures. By examining the $^{13}C$ hyperfine interaction upon pressurizing, we show that the NV hyperfine parameters have prominent changes, resulting in an increase in the NV electron spin density and rehybridization from $sp^3$ to $sp^2$ bonds. The $ab$ $initio$ calculations of strain dependence of the NV center's hyperfine levels are done independently. The theoretical results qualitatively agree well with experimental data without introducing any fitting parameters. Furthermore, this method can be adopted to probe the evolution of wavefunction in other defect systems. This potential capability could play an important role in develo** magnetometry and quantum information processing using the defect centers. △ Less

Submitted 15 December, 2022; originally announced December 2022.

Journal ref: Phys. Rev. Appl. 18, 064042 (2022)

Phononic Obstructed Atomic Insulators with Robust Corner Modes

Authors: Da-Shuai Ma, Kejun Yu, Xiao-** Li, Xiaoyuan Zhou, Rui Wang

Abstract: Higher-order topological insulators (HOTIs) are described by symmetric exponentially decayed Wannier functions at some $necessary$ unoccupied Wyckoff positions and classified as obstructed atomic insulators (OAIs) in the topological quantum chemistry (TQC) theory. The boundary states in HOTIs reported so far are often fragile, manifested as strongly depending on crystalline symmetries and cleavage… ▽ More Higher-order topological insulators (HOTIs) are described by symmetric exponentially decayed Wannier functions at some $necessary$ unoccupied Wyckoff positions and classified as obstructed atomic insulators (OAIs) in the topological quantum chemistry (TQC) theory. The boundary states in HOTIs reported so far are often fragile, manifested as strongly depending on crystalline symmetries and cleavage terminations in the disk or cylinder geometry. Here, using the TQC theory, we present an intuitive argument about the connection between the obstructed Wannier charge centers of OAIs and the emergence of robust corner states in two-dimensional systems. Based on first-principles calculations and Real Space Invariant theory, we extend the concept of OAIs to phonon systems and thereby predict that the robust corner states can be realized in the phonon spectra of $MX_3$ ($M$=Bi, Sb, As, Sc, Y; $X$=I, Br, Cl) monolayers. The phonon corner modes in different shapes of nano-disks are investigated, and their robustness facilitates the detection in experiments and further applications. This work suggests a promising avenue to explore more attractive features of higher-order band topology. △ Less

Submitted 26 October, 2022; originally announced October 2022.

Atomic and mesoscopic structure of Dy-based surface alloys on noble metals

Authors: Sina Mousavion, Ka Man Yu, Mahalingam Maniraj, Lu Lyu, Johannes Knippertz, Benjamin Stadtmüller, Martin Aeschlimann

Abstract: Surface alloys are a highly tunable class of low dimensional materials with the opportunity to tune and control the spin and charge carrier functionalities on the nanoscale. Here, we focus on the atomic and mesoscopic structural details of three distinctive binary rare-earth-noble metals (RE/NM) surface alloys by employing scanning tunneling microscopy (STM) and low energy electron diffraction (LE… ▽ More Surface alloys are a highly tunable class of low dimensional materials with the opportunity to tune and control the spin and charge carrier functionalities on the nanoscale. Here, we focus on the atomic and mesoscopic structural details of three distinctive binary rare-earth-noble metals (RE/NM) surface alloys by employing scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Using Dysprosium as the guest element on fcc(111) noble metal substrates, we identify the formation of non-commensurate surface alloy superstructures which exhibit homogeneous moiré patterns for DyCu2/Cu (111) and DyAu2/Au(111), while an inhomogeneous one is found for DyAg2/Ag(111). The variations in the local structure are analyzed for all three surface alloys and the observed differences are discussed in the light of the lattice mismatches of the alloy layer with respect to the underlying substrate. For the particularly intriguing case of a Dy-Ag surface alloy, the surface alloy layer does not show a uniform long-range periodic structure, but consists of local hexagonal tiles separated by extended domain walls. These domain walls exist to relief the in-plane strain within the DyAg2 surface alloy layer. Our findings clearly demonstrate that surface alloying is an intriguing tool to tailor both the local atomic, but also the mesoscopic moiré structures of metallic heterostructures. △ Less

Submitted 3 March, 2022; v1 submitted 23 November, 2021; originally announced November 2021.

Nonadiabatic geometric quantum computation with shortened path on superconducting circuits

Authors: Cheng-Yun Ding, Yan Liang, Kai-Zhi Yu, Zheng-Yuan Xue

Abstract: Recently, nonadiabatic geometric quantum computation has been received much attention, due to its fast manipulation and intrinsic error-resilience characteristics. However, to obtain universal geometric quantum control, only limited and special evolution paths have been proposed, which usually requires longer gate-time and more operational steps, and thus leads to lower quality of the implemented… ▽ More Recently, nonadiabatic geometric quantum computation has been received much attention, due to its fast manipulation and intrinsic error-resilience characteristics. However, to obtain universal geometric quantum control, only limited and special evolution paths have been proposed, which usually requires longer gate-time and more operational steps, and thus leads to lower quality of the implemented quantum gates. Here, we present an effective scheme to find the shortest geometric path under the conventional conditions of geometric quantum computation, where high-fidelity and robust geometric gates can be realized by only single-loop evolution, and the gate performances are better than the corresponding dynamical ones. Furthermore, we can optimize the pulse shapes in our scheme to further shorten the gate-time, determined by how fast the path is travelled. In addition, we also present its physical implementation on superconducting circuits, consisting of capacitively coupled transmon qubits, where the fidelities of geometric single- and two-qubit gates can be higher than $99.95\%$ and $99.80\%$ within the current state-of-the-art experimental technologies, respectively. These results indicate that our scheme is promising for large-scale fault-tolerant quantum computation. △ Less

Submitted 2 November, 2021; originally announced November 2021.

Comments: Accepted version

Journal ref: Appl. Phys. Lett. 119, 184001 (2021)

Soft-Elasticity Optimises Dissipation in 3D-Printed Liquid Crystal Elastomers

Authors: Devesh Mistry, Nicholas A. Traugutt, Brett Sanborn, Ross H. Volpe, Lillian Chatham, Risheng Zhou, Bo Song, Kai Yu, Kevin Long, Christopher M. Yakacki

Abstract: Soft-elasticity in monodomain liquid crystal elastomers (LCEs) is promising for impact-absorbing applications where strain energy is ideally absorbed at constant stress. Conventionally, compressive and impact studies on LCEs have not been performed given the notorious difficulty synthesizing sufficiently large monodomain devices. Here we demonstrate 3D printing bulk ($>cm^3$) monodomain LCE device… ▽ More Soft-elasticity in monodomain liquid crystal elastomers (LCEs) is promising for impact-absorbing applications where strain energy is ideally absorbed at constant stress. Conventionally, compressive and impact studies on LCEs have not been performed given the notorious difficulty synthesizing sufficiently large monodomain devices. Here we demonstrate 3D printing bulk ($>cm^3$) monodomain LCE devices using direct ink writing and study their compressive soft-elasticity over 8 decades of strain rate. At quasi-static rates, the monodomain soft-elastic LCE dissipated 45% of strain energy while comparator materials dissipated less than 20%. At strain rates up to $3000~s^{-1}$, our soft-elastic monodomain LCE consistently performed closest to an ideal-impact absorber. Drop testing reveals soft-elasticity as a likely mechanism for effectively reducing the severity of impacts -- with soft elastic LCEs offering a Gadd Severity Index 40% lower than a comparable isotropic elastomer. Lastly, we demonstrate tailoring deformation and buckling behavior in monodomain LCEs via the printed director orientation. △ Less

Submitted 3 June, 2021; originally announced June 2021.

Comments: 22 pages in. SI, 5 main figs, 3 supplementary figs and 1 supplementary table

An Extendible, Graph-Neural-Network-Based Approach for Accurate Force Field Development of Large Flexible Organic Molecules

Authors: Xufei Wang, Yuanda Xu, Han Zheng, Kuang Yu

Abstract: An accurate force field is the key to the success of all molecular mechanics simulations on organic polymers and biomolecules. Accuracy beyond density functional theory is often needed to describe the intermolecular interactions, while most correlated wavefunction (CW) methods are prohibitively expensive for large molecules. Therefore, it posts a great challenge to develop an extendible ab initio… ▽ More An accurate force field is the key to the success of all molecular mechanics simulations on organic polymers and biomolecules. Accuracy beyond density functional theory is often needed to describe the intermolecular interactions, while most correlated wavefunction (CW) methods are prohibitively expensive for large molecules. Therefore, it posts a great challenge to develop an extendible ab initio force field for large flexible organic molecules at CW level of accuracy. In this work, we face this challenge by combining the physics-driven nonbonding potential with a data-driven subgraph neural network bonding model (named sGNN). Tests on polyethylene glycol polymer chains show that our strategy is highly accurate and robust for molecules of different sizes. Therefore, we can develop the force field from small molecular fragments (with sizes easily accessible to CW methods) and safely transfer it to large polymers, thus opening a new path to the next-generation organic force fields. △ Less

Submitted 2 June, 2021; originally announced June 2021.

Accelerated impurity solver for DMFT and its diagrammatic extensions

Authors: Corey Melnick, Patrick Sémon, Kwangmin Yu, Nicholas D'Imperio, André-Marie Tremblay, Gabriel Kotliar

Abstract: We present ComCTQMC, a GPU accelerated quantum impurity solver. It uses the continuous-time quantum Monte Carlo (CTQMC) algorithm wherein the partition function is expanded in terms of the hybridisation function (CT-HYB). ComCTQMC supports both partition and worm-space measurements, and it uses improved estimators and the reduced density matrix to improve observable measurements whenever possible.… ▽ More We present ComCTQMC, a GPU accelerated quantum impurity solver. It uses the continuous-time quantum Monte Carlo (CTQMC) algorithm wherein the partition function is expanded in terms of the hybridisation function (CT-HYB). ComCTQMC supports both partition and worm-space measurements, and it uses improved estimators and the reduced density matrix to improve observable measurements whenever possible. ComCTQMC efficiently measures all one and two-particle Green's functions, all static observables which commute with the local Hamiltonian, and the occupation of each impurity orbital. ComCTQMC can solve complex-valued impurities with crystal fields that are hybridized to both fermionic and bosonic baths. Most importantly, ComCTQMC utilizes graphical processing units (GPUs), if available, to dramatically accelerate the CTQMC algorithm when the Hilbert space is sufficiently large. We demonstrate acceleration by a factor of over 600 (100) in a simulation of $δ$-Pu at 600 K with (without) crystal fields. In easier problems, the GPU offers less impressive acceleration or even decelerates the CTQMC. Here we describe the theory, algorithms, and structure used by ComCTQMC in order to achieve this set of features and level of acceleration. △ Less

Submitted 16 October, 2020; originally announced October 2020.

Comments: 49 pages, 19 figures, submitted to Computer Physics Communications

Vacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations

Authors: Kingsley O. Egbo, Chao ** Liu, Chinedu E. Ekuma, Kin Man Yu

Abstract: Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy acceptors. Herein, we present a systematic study comparing the optoelectronic properties of stoichiometric NiO, oxygen-rich NiO with Ni vacancies (NiO:VNi), and… ▽ More Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy acceptors. Herein, we present a systematic study comparing the optoelectronic properties of stoichiometric NiO, oxygen-rich NiO with Ni vacancies (NiO:VNi), and Ni-rich NiO with O vacancies (NiO:VO). The optical properties were obtained by spectroscopic ellipsometry, while valence band spectra were probed by high-resolution x-ray photoelectron spectroscopy. The experimental results are directly compared to first-principles density functional theory + U calculations. Computational results confirm that gap states are present in both NiO systems with vacancies. Gap states in NiO:Vo are predominantly Ni 3d states, while those in NiO:VNi are composed of both Ni 3d and O 2p states. The absorption spectra of the NiO:VNi sample show significant defect-induced features below 3.0 eV compared to NiO and NiO:VO samples. The increase in sub-gap absorptions in NiO:VNi can be attributed to gap states observed in the electronic density of states. The relation between native vacancy defects and electronic and optical properties of NiO are demonstrated, showing that at similar vacancy concentration, the optical constants of NiO:VNi deviate significantly from those of NiO:VO. Our experimental and computational results reveal that although VNi are effective acceptors in NiO, they also degrade the visible transparency of the material. Hence, for transparent optoelectronic device applications, an optimization of native VNi defects with extrinsic do** is required to simultaneously enhance p-type conductivity and transparency. △ Less

Submitted 7 October, 2020; originally announced October 2020.

Comments: 25 Pages, 5 Figures

Journal ref: J. Appl. Phys. 128, 135705 (2020)

Atomic structure of CdS magic-size clusters by X-ray absorption spectroscopy

Authors: Ying Liu, Lei Tan, Giannantonio Cibin, Diego Gianolio, Shuo Han, Kui Yu, Martin T. Dove, Andrei V. Sapelkin

Abstract: Magic-size clusters are ultra-small colloidal semiconductor systems that are intensively studied due to their monodisperse nature and sharp UV-vis absorption peak compared with regular quantum dots. However, the small size of such clusters (<2 nm), and the large surface-to-bulk ratio significantly limit characterisation techniques that can be utilised. Here we demonstrate how a combination of EXAF… ▽ More Magic-size clusters are ultra-small colloidal semiconductor systems that are intensively studied due to their monodisperse nature and sharp UV-vis absorption peak compared with regular quantum dots. However, the small size of such clusters (<2 nm), and the large surface-to-bulk ratio significantly limit characterisation techniques that can be utilised. Here we demonstrate how a combination of EXAFS and XANES can be used to obtain information about sample stoichiometry and cluster symmetry. Investigating two types of clusters that show sharp UV-vis absorption peaks at 311 nm and 322 nm, we found that both samples possess approximately 2:1 Cd:S ratio and have similar nearest-neighbour structural arrangements. However, both samples demonstrate a significant departure from the tetrahedral structural arrangement, with an average bond angle determined to be around 106.1 degree showing a bi-fold bond angle distribution. Our results suggest that both samples are quazi-isomers. Their core structure has identical chemical composition but a different atomic arrangement with distinct bond angle distributions. △ Less

Submitted 22 July, 2020; originally announced July 2020.

Comments: 7 pages, 5 figures

Experimental evidence of monolayer AlB$_2$ with symmetry-protected Dirac cones

Authors: Daiyu Geng, Kejun Yu, Shaosheng Yue, ** Cao, Wenbin Li, Dashuai Ma, Chaoxi Cui, Masashi Arita, Shiv Kumar, Eike F. Schwier, Kenya Shimada, Peng Cheng, Lan Chen, Kehui Wu, Yugui Yao, Baojie Feng

Abstract: Monolayer AlB$_2$ is composed of two atomic layers: honeycomb borophene and triangular aluminum. In contrast with the bulk phase, monolayer AlB$_2$ is predicted to be a superconductor with a high critical temperature. Here, we demonstrate that monolayer AlB$_2$ can be synthesized on Al(111) via molecular beam epitaxy. Our theoretical calculations revealed that the monolayer AlB$_2$ hosts several D… ▽ More Monolayer AlB$_2$ is composed of two atomic layers: honeycomb borophene and triangular aluminum. In contrast with the bulk phase, monolayer AlB$_2$ is predicted to be a superconductor with a high critical temperature. Here, we demonstrate that monolayer AlB$_2$ can be synthesized on Al(111) via molecular beam epitaxy. Our theoretical calculations revealed that the monolayer AlB$_2$ hosts several Dirac cones along the $Γ$--M and $Γ$--K directions; these Dirac cones are protected by crystal symmetries and are thus resistant to external perturbations. The extraordinary electronic structure of the monolayer AlB$_2$ was confirmed via angle-resolved photoemission spectroscopy measurements. These results are likely to stimulate further research interest to explore the exotic properties arising from the interplay of Dirac fermions and superconductivity in two-dimensional materials. △ Less

Submitted 22 April, 2020; originally announced April 2020.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 101, 161407(R) (2020)

The Casimir force, causality and the Gurzhi model

Authors: G. L. Klimchitskaya, V. M. Mostepanenko, Kailiang Yu, L. M. Woods

Abstract: An extended Drude model, termed as the Gurzhi model, which takes into account the electron-phonon and electron-electron interactions, is applied to calculate the Casimir force between two metallic plates. It is shown that although the dielectric permittivity of the Gurzhi model has a first order pole in the upper half-plane of complex frequencies and, thus, violates the causality principle, it can… ▽ More An extended Drude model, termed as the Gurzhi model, which takes into account the electron-phonon and electron-electron interactions, is applied to calculate the Casimir force between two metallic plates. It is shown that although the dielectric permittivity of the Gurzhi model has a first order pole in the upper half-plane of complex frequencies and, thus, violates the causality principle, it can be used in a restricted frequency interval in combination with the experimental permittivity determined by the optical data for the complex index of refraction. The imaginary part of the Gurzhi dielectric permittivity of Au at low frequencies demonstrates better agreement with the permittivity given by the optical data than the simple Drude model. The Casimir pressure between two Au plates is computed using the Gurzhi, Drude and plasma model approaches, taking into account the optical data, as well as with the simple Drude and plasma models. The contribution of the electron-electron scattering to the Casimir pressure is estimated. Although a comparison with the measurement data of two precise experiments show that the Gurzhi model does not resolve the Casimir puzzle, the obtained results suggest further clarification of this fundamental problem. △ Less

Submitted 5 February, 2020; originally announced February 2020.

Comments: 20 pages, 1 Table, 5 figures; accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B, v. 101, 075418 (2020)

Observation of optical absorption correlated with surface state of topological insulator

Authors: Jiwon Jeon, Kwangnam Yu, Jiho Kim, Jisoo Moon, Seongshik Oh, E. J. Choi

Abstract: We performed broadband optical transmission measurements of Bi2Se3 and In-doped Bi(1-x)In(x)2Se3 thin films, where in the latter the spin-orbit coupling (SOC) strength can be tuned by introducing In. Drude and interband transitions exhibit In-dependent changes that are consistent with evolution from metallic (x=0) to insulating (x=1) nature of the end compounds. Most notably, an optical absorption… ▽ More We performed broadband optical transmission measurements of Bi2Se3 and In-doped Bi(1-x)In(x)2Se3 thin films, where in the latter the spin-orbit coupling (SOC) strength can be tuned by introducing In. Drude and interband transitions exhibit In-dependent changes that are consistent with evolution from metallic (x=0) to insulating (x=1) nature of the end compounds. Most notably, an optical absorption peak located at hw=1eV in Bi2Se3 is completely quenched at x=0.06, the critical concentration where the phase transition from TI into non-TI takes place. For this x, the surface state (SS) is vanished from the band structure as well. The correlation between the 1eV optical peak and the SS in the x-dependences suggests that the peak is associated with the SS. We further show that when Bi2Se3 is electrically gated, the 1eV-peak becomes stronger(weaker) when electron is depleted from (accumulated into) the SS. These observations combined together demonstrate that under the hw=1eV illumination electron is excited from a bulk band into the topological surface band of Bi2Se3. The optical population of surface band is of significant importance not only for fundamental study but also for TI-based optoelectronic device application. △ Less

Submitted 7 November, 2019; originally announced November 2019.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 100, 195110 (2019)

Gate tunable optical absorption and band structure of twisted bilayer graphene

Authors: Kwangnam Yu, Van Luan Nguyen, Tae Soo Kim, Jiwon Jeon, Jiho Kim, Pilkyung Moon, Young Hee Lee, E. J. Choi

Abstract: We report the infrared transmission measurement on electrically gated twisted bilayer graphene. The optical absorption spectrum clearly manifests the dramatic changes such as the splitting of inter-linear-band absorption step, the shift of inter-van Hove singularity transition peak, and the emergence of very strong intra-valence (intra-conduction) band transition. These anomalous optical behaviors… ▽ More We report the infrared transmission measurement on electrically gated twisted bilayer graphene. The optical absorption spectrum clearly manifests the dramatic changes such as the splitting of inter-linear-band absorption step, the shift of inter-van Hove singularity transition peak, and the emergence of very strong intra-valence (intra-conduction) band transition. These anomalous optical behaviors demonstrate consistently the non-rigid band structure modification created by the ion-gel gating through the layer-dependent Coulomb screening. We propose that this screening-driven band modification is an universal phenomenon that persists to other bilayer crystals in general, establishing the electrical gating as a versatile technique to engineer the band structures and to create new types of optical absorptions that can be exploited in electro-optical device application. △ Less

Submitted 7 November, 2019; originally announced November 2019.

Comments: 13 pages, 4 figures

Journal ref: Phys. Rev. B 99, 241405(R) (2019)

Infrared study of carrier scattering mechanism in ion-gated graphene

Authors: Kwangnam Yu, Jiwon Jeon, Jiho Kim, Chang Won Oh, Yongseok Yoon, Beom Joon Kim, Jeong Ho Cho, E. J. Choi

Abstract: We performed infrared transmission experiment on ion-gel gated graphene and measured carrier scattering rate g as function of carrier density n over wide range up to n=2E13 cm-2. The g exhibits a rapid decreases along with the gating followed by persistent increases on further carrier do**. This behavior of g(n) demonstrates that carrier is scattered dominantly by the two scattering mechanisms,… ▽ More We performed infrared transmission experiment on ion-gel gated graphene and measured carrier scattering rate g as function of carrier density n over wide range up to n=2E13 cm-2. The g exhibits a rapid decreases along with the gating followed by persistent increases on further carrier do**. This behavior of g(n) demonstrates that carrier is scattered dominantly by the two scattering mechanisms, namely, charged impurity (CI) scattering and short-range disorder (SR) scattering, with additional minor scattering from substrate phonon (SPP). We can determine the absolute strengths of all the scattering channels by fitting the g(n) data and unveils the complete n-dependent map of the scattering mechanisms g(n)=gCI(n)+gSR(n)+gSPP(n). The gCI(n) and gSR(n) are larger than those of SiO2$-gated graphene by 1.8 times, which elucidates the dual role of the ion-gel layer as a CI-scatterer and simultaneously a SR-scatterer to graphene. Additionally we show that freezing of IG at low-T (~200 K) does not cause any change to the carrier scattering. △ Less

Submitted 7 November, 2019; originally announced November 2019.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 114, 083503 (2019)

Infrared study of Large scale h-BN film and Graphene/h-BN heterostructure

Authors: Kwangnam Yu, Jiho Kim, Chul Lee, A-Rang Jang, Hyeon Suk Shin, Keun Soo Kim, Young-Jun Yu, E. J. Choi

Abstract: We synthesize a series of CVD h-BN films and perform critical infrared spectroscopic characterization. For high-temperature (HT, Temp = 1400 degrees) grown h-BN thin film only E1u-mode infrared phonon is activated demonstrating highly aligned 2D h-BN planes over large area, whereas low-temperature (LT, Temp = 1000 degrees) grown film shows two phonon peaks, E1u and A2u, due to stacking of h-BN pla… ▽ More We synthesize a series of CVD h-BN films and perform critical infrared spectroscopic characterization. For high-temperature (HT, Temp = 1400 degrees) grown h-BN thin film only E1u-mode infrared phonon is activated demonstrating highly aligned 2D h-BN planes over large area, whereas low-temperature (LT, Temp = 1000 degrees) grown film shows two phonon peaks, E1u and A2u, due to stacking of h-BN plane at tilted angle. For CVD graphene transferred on HT h-BN/SiO2/Si substrate, interband transition spectrum s1 shifts strongly to lower energy compared with that on LT h-BN/SiO2/Si and on bare SiO2/Si substrate, revealing that residual carrier density n in graphene is suppressed by use of HT h-BN layer. Also the interband transition width of s1 defined by effective temperature is reduced from 400 K for G/SiO2/Si to 300 K for HT h-BN/SiO2/Si. The behaviors of n and effective temperature show that HT h-BN film can decouple CVD graphene from the impurity and defect of SiO2 leading to large scale free-standing like graphene. △ Less

Submitted 7 November, 2019; originally announced November 2019.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 108, 241910 (2016)

Infrared spectroscopic study of carrier scattering in gated CVD graphene

Authors: Kwangnam Yu, Jiho Kim, Joo Youn Kim, Wonki Lee, Jun Yeon Hwang, E. H. Hwang, E. J. Choi

Abstract: We measured Drude absorption of gated CVD graphene using far-infrared transmission spectroscopy, and determined carrier scattering rate (g) as function of the varied carrier density (n). The n-dependent g(n) was obtained for a series of conditions systematically changed as (10 K, vacuum) -> (300 K, vacuum) -> (300 K, ambient pressure), which reveals that (1) at low-T, charged impurity (=A/sqrt(n))… ▽ More We measured Drude absorption of gated CVD graphene using far-infrared transmission spectroscopy, and determined carrier scattering rate (g) as function of the varied carrier density (n). The n-dependent g(n) was obtained for a series of conditions systematically changed as (10 K, vacuum) -> (300 K, vacuum) -> (300 K, ambient pressure), which reveals that (1) at low-T, charged impurity (=A/sqrt(n)) and short-range defect (=B*sqrt(n)) are the major scattering sources which constitute the total scattering g=A/sqrt(n)+B*sqrt(n), (2) among various kinds of phonons populated at room-T, surface polar phonon of the SiO2 substrate is the dominantly scattering source, (3) in air, the gas molecules adsorbed on graphene play a dual role in carrier scattering as charged impurity center and resonant scattering center. We present the absolute scattering strengths of those individual scattering sources, which provides the complete map of scattering mechanism of CVD graphene for the first time. This scattering map allows us find out practical measures to suppress the individual scatterings, the mobility gains accompanied by them, and finally the ultimate attainable carrier mobility for CVD graphene. △ Less

Submitted 6 November, 2019; originally announced November 2019.

Comments: 14 pages, 6 figures

Journal ref: Phys. Rev. B, 94, 235404 (2016)

Torsional refrigeration by twisted, coiled, and supercoiled fibers

Authors: Run Wang, Shaoli Fang, Yicheng Xiao, Enlai Gao, Nan Jiang, Yaowang Li, Linlin Mou, Yanan Shen, Wubin Zhao, Sitong Li, Alexandre F. Fonseca, Douglas S. Galvão, Mengmeng Chen, Wenqian He, Kaiqing Yu, Hongbing Lu, Xuemin Wang, Dong Qian, Ali E. Aliev, Na Li, Carter S. Haines, Zhongsheng Liu, Jiuke Mu, Zhong Wang, Shougen Yin , et al. (5 additional authors not shown)

Abstract: Higher efficiency, lower cost refrigeration is needed for both large and small scale cooling. Refrigerators using entropy changes during cycles of stretching or hydrostatically compression of a solid are possible alternatives to the vapor-compression fridges found in homes. We show that high cooling results from twist changes for twisted, coiled, or supercoiled fibers, including those of natural r… ▽ More Higher efficiency, lower cost refrigeration is needed for both large and small scale cooling. Refrigerators using entropy changes during cycles of stretching or hydrostatically compression of a solid are possible alternatives to the vapor-compression fridges found in homes. We show that high cooling results from twist changes for twisted, coiled, or supercoiled fibers, including those of natural rubber, NiTi, and polyethylene fishing line. By using opposite chiralities of twist and coiling, supercoiled natural rubber fibers and coiled fishing line fibers result that cool when stretched. A demonstrated twist-based device for cooling flowing water provides a high cooling energy and device efficiency. Theory describes the axial and spring index dependencies of twist-enhanced cooling and its origin in a phase transformation for polyethylene fibers. △ Less

Submitted 24 October, 2019; originally announced October 2019.

Quantum sensing of local magnetic field texture in strongly correlated electron systems under extreme conditions

Authors: King Yau Yip, Kin On Ho, King Yiu Yu, Yang Chen, Wei Zhang, S. Kasahara, Y. Mizukami, T. Shibauchi, Y. Matsuda, Swee K. Goh, Sen Yang

Abstract: An important feature of strong correlated electron systems is the tunability between interesting ground states such as unconventional superconductivity and exotic magnetism. Pressure is a clean, continuous and systematic tuning parameter. However, due to the restricted accessibility introduced by high-pressure devices, compatible magnetic field sensors with sufficient sensitivity are rare. This gr… ▽ More An important feature of strong correlated electron systems is the tunability between interesting ground states such as unconventional superconductivity and exotic magnetism. Pressure is a clean, continuous and systematic tuning parameter. However, due to the restricted accessibility introduced by high-pressure devices, compatible magnetic field sensors with sufficient sensitivity are rare. This greatly limits the detections and detailed studies of pressure-induced phenomena. Here, we utilize nitrogen vacancy (NV) centers in diamond as a powerful, spatially-resolved vector field sensor for material research under pressure at cryogenic temperatures. Using a single crystal of BaFe2(As0:59P0:41)2 as an example, we extract the superconducting transition temperature (Tc), the local magnetic field profile in the Meissner state and the critical fields (Hc1 and Hc2). The method developed in this work will become a unique tool for tuning, probing and understanding quantum many body systems. △ Less

Submitted 25 December, 2018; originally announced December 2018.

Journal ref: Science 366, 1355 (2019)

X-ray total scattering study of regular and magic-size nanoclusters of cadmium sulphide

Authors: Lei Tan, Alston J Misquitta, Andrei Sapelkin, Le Fang, Rory M Wilson, Baowei Zhang, Tingting Zhu, Frank S Riehle, Shuo Han, Kui Yu, Martin T Dove

Abstract: Four kinds of magic-size CdS clusters and two different regular CdS quantum dots have been studied by x-ray total scattering technique and pair distribution function method. Results for the regular CdS quantum dots could be modelled as a mixed phase of atomic structures based on the two bulk crystalline phases, which is interpreted as representing the effects of stacking disorder. However, the res… ▽ More Four kinds of magic-size CdS clusters and two different regular CdS quantum dots have been studied by x-ray total scattering technique and pair distribution function method. Results for the regular CdS quantum dots could be modelled as a mixed phase of atomic structures based on the two bulk crystalline phases, which is interpreted as representing the effects of stacking disorder. However, the results for the magic-size clusters were significantly different. On one hand, the short-range features in the pair distribution function reflect the bulk, indicating that these structures are based on the same tetrahedral coordination found in the bulk phases (and therefore excluding new types of structures such as cage-like arrangements of atoms). But on the other hand, the longer- range atomic structure clearly does not reflect the layer structures found in the bulk and the regular quantum dots. We compare the effects of two ligands, phenylacetic acid and oleic acid, showing that in two cases the ligand has little effect on the atomic structure of the magic-size nanocluster and in another it has a significant effect. △ Less

Submitted 8 June, 2018; originally announced June 2018.

Comments: 8 pages in the main paper, 6 figures in the main paper, 7 pages in the electronic supporting information, 4 figures in the electronic supporting information

THz Transient Photoconductivity of the III-V Dilute Nitride GaPAsN

Authors: J. N. Heyman, E. M. Weiss, J. R. Rollag, K. M. Yu, O. D. Dubon, Y. J. Kuang, C. W. Tu, W. Walukiewicz

Abstract: THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bim… ▽ More THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bimolecular electron-hole recombination with recombination constant r = 3.2E-8 +/-0.8E-8 cm3/s. We discuss the implications for applications in solar energy. △ Less

Submitted 10 May, 2018; originally announced May 2018.

Comments: 12 pages, 4 figures

Photonic Spin Hall Effect in Waveguides Composed of Two Types of Single-Negative Metamaterials

Authors: Zhiwei Guo, Haitao Jiang, Yang Long, Kun Yu, Jie Ren, Chunhua Xue, Hong Chen

Abstract: The polarization controlled optical signal routing has many important applications in photonics such as polarization beam splitter. By using two-dimensional transmission lines with lumped elements, we experimentally demonstrate the selective excitation of guided modes in waveguides composed of two kinds of single-negative metamaterials. A localized, circularly polarized emitter placed near the int… ▽ More The polarization controlled optical signal routing has many important applications in photonics such as polarization beam splitter. By using two-dimensional transmission lines with lumped elements, we experimentally demonstrate the selective excitation of guided modes in waveguides composed of two kinds of single-negative metamaterials. A localized, circularly polarized emitter placed near the interface of the two kinds of single-negative metamaterials only couples with one guided mode with a specific propagating direction determined by the polarization handedness of the source. Moreover, this optical spin-orbit locking phenomenon, also called the photonic spin Hall effect, is robust against interface fluctuations, which may be very useful in the manipulation of electromagnetic signals. △ Less

Submitted 11 November, 2017; originally announced November 2017.

Comments: 6 figures, published in Scientific Reports, See https://www.nature.com/articles/s41598-017-08171-y

Journal ref: Scientific Reports 7, 7742 (2017)

Dial-in Topological Metamaterials Based on Bistable Stewart Platform

Authors: Ying Wu, Rajesh Chaunsali, Hiromi Yasuda, Kai** Yu, **kyu Yang

Abstract: Recently, there have been significant efforts to guide mechanical energy in structures by relying on a novel topological framework popularized by the discovery of topological insulators. Here, we propose a topological metamaterial system based on the design of the Stewart Platform, which can not only guide mechanical waves robustly in a desired path, but also can be tuned in situ to change this wa… ▽ More Recently, there have been significant efforts to guide mechanical energy in structures by relying on a novel topological framework popularized by the discovery of topological insulators. Here, we propose a topological metamaterial system based on the design of the Stewart Platform, which can not only guide mechanical waves robustly in a desired path, but also can be tuned in situ to change this wave path at will. Without resorting to any active materials, the current system harnesses bistablilty in its unit cells, such that tuning can be performed simply by a dial-in action. Consequently, a topological transition mechanism inspired by the quantum valley Hall effect can be achieved. We show the possibility of tuning in a variety of topological and traditional waveguides in the same system, and numerically investigate key qualitative and quantitative differences between them. We observe that even though both types of waveguides can lead to significant wave transmission for a certain frequency range, topological waveguides are distinctive as they support robust, back scattering immune, one-way wave propagation. △ Less

Submitted 22 September, 2017; originally announced October 2017.

Report number: s41598

Journal ref: Sci. Rep. 8, 41598 (2018)

Generalized thermoelastic band structures of Rayleigh wave in one-dimensional phononic crystals

Authors: Ying Wu, Kai** Yu, Linyun Yang, Haotian Zhou, Rui Zhao

Abstract: We investigate generalized band structures of Rayleigh wave in 1-D phononic crystals in the context of Green-Nagdhi thermoelastic (TE) theory. Solutions of the coupled equations included thermal field are obtained firstly. Then according to boundary conditions, phase velocity is derived. The transfer matrix methodology is adopted in order to formulate the band structures of generalized TE Rayleigh… ▽ More We investigate generalized band structures of Rayleigh wave in 1-D phononic crystals in the context of Green-Nagdhi thermoelastic (TE) theory. Solutions of the coupled equations included thermal field are obtained firstly. Then according to boundary conditions, phase velocity is derived. The transfer matrix methodology is adopted in order to formulate the band structures of generalized TE Rayleigh wave. It is demonstrated that the band structure of TE Rayleigh wave is comprised of elastic and thermal bands. For Aluminum-Epoxy phononic crystal, the thermoelasticity can influence the transmission ability of band gaps as well as narrow down the band gap width. △ Less

Submitted 23 January, 2017; originally announced January 2017.

Comments: 7 pages, 6 figures

Journal ref: Meccanica. Online first (2017)

Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor

Authors: J. N. Heyman, A. M. Schwartzberg, K. M. Yu, A. V. Luce, O. D. Dubon, Y. J. Kuang, C. W. Tu, W. Walukiewicz

Abstract: We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a function of time after an excitation pulse. Following photoexcitation of GaP0.32As0.67N0.01 we find that the electron population in the conduction band decays exponen… ▽ More We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a function of time after an excitation pulse. Following photoexcitation of GaP0.32As0.67N0.01 we find that the electron population in the conduction band decays exponentially with a time constant 23ps. The electron population in the intermediate band exhibits bimolecular recombination with recombination constant r = 2 10^-8 cm-3/s. In our experiment an optical pump pulse excited electrons from the valance band to the intermediate and conduction bands, and the change in interband absorption due to absorption saturation and induced absorption was probed with a delayed white light pulse. We modeled the optical properties of our samples using the band anti-crossing model to extract carrier densities as a function of time. These results indicate that the minority carrier lifetimes are too short for efficient solar power conversion and that improvements in material quality will be required for practical applications of GaPAsN based intermediate band solar cells. △ Less

Submitted 18 August, 2016; originally announced August 2016.

Comments: 15 pages, 7 figures

Journal ref: Phys. Rev. Applied 7, 014016 (2017)

Shear-Exfoliated Phosphorene for Rechargeable Nanoscale Battery

Authors: Feng Xu, Binghui Ge, **g Chen, Lin Huo, Hongyu Ma, Chongyang Zhu, Weiwei Xia, Huihua Min, Zhengrui Li, Shengli Li, Kaihao Yu, Feng Wang, Yimei Zhu, Lijun Wu, Yi** Cui, Litao Sun

Abstract: Discovery of atomically thin black phosphorus (called phosphorene) holds promise to be used as an alternative two-dimensional material to graphene and transition metal dichalcogenides especially as an anode material for lithium-ion batteries (LIBs). However, at present bulk black phosphorus (BP) still suffers from rapid capacity fading that results in poor rechargeable performance. Here, for the f… ▽ More Discovery of atomically thin black phosphorus (called phosphorene) holds promise to be used as an alternative two-dimensional material to graphene and transition metal dichalcogenides especially as an anode material for lithium-ion batteries (LIBs). However, at present bulk black phosphorus (BP) still suffers from rapid capacity fading that results in poor rechargeable performance. Here, for the first time, we use in situ transmission electron microscopy (TEM) to construct nanoscale phosphorene LIBs and visualize the capacity fading mechanism in thick multilayer phosphorene by real time capturing delithiation-induced structural decomposition that reduces electrical conductivity and thus causes irreversibility of lithiated Li3P phase. We further demonstrate that few-layer phosphorene successfully circumvents the structural decomposition and holds superior structural restorability, even subjected to multi-cycle lithiation/delithiation processes and concomitant huge volume expansion. This finding affords new experimental insights into thickness-dependent lithium diffusion kinetics in phosphorene. Additionally, a scalable liquid-phase shear exfoliation route has been developed to produce high-quality ultrathin (monolayer or few-layer) phosphorene, only by a high-speed shear mixer or even a household kitchen blender with the shear rate threshold, which will pave the way for potential large-scale applications in LIBs once the rechargeable phosphorene nanoscale batteries can be transferred to industrialized enlargement in the future. △ Less

Submitted 29 August, 2015; originally announced August 2015.

Experimental and ab initio studies of the novel piperidine-containing acetylene glycols

Authors: Amina Mirsakiyeva, Darya Botkina, Karim Elgammal, Assel Ten, Håkan W. Hugosson, Anna Delin, Valentina K. Yu

Abstract: Synthesis routes of novel piperidine-containing diacetylene are presented. The new molecules are expected to exhibit plant growth stimulation properties. In particular, the yield in a situation of drought is expected to increase. The synthesis makes use of the Favorskii reaction between cycloketones/piperidone and triple-bond containing glycols. The geometries of the obtained molecules were determ… ▽ More Synthesis routes of novel piperidine-containing diacetylene are presented. The new molecules are expected to exhibit plant growth stimulation properties. In particular, the yield in a situation of drought is expected to increase. The synthesis makes use of the Favorskii reaction between cycloketones/piperidone and triple-bond containing glycols. The geometries of the obtained molecules were determined using nuclear magnetic resonance (NMR). The electronic structure and geometries of the molecules were studied theoretically using first-principles calculations based on density functional theory. The calculated geometries agree very well with the experimentally measured ones, and also allow us to determine bond lengths, angles and charge distributions inside the molecules. The stability of the OH-radicals located close to the triple bond and the piperidine/cyclohexane rings was proven by both experimental and theoretical analyses. The HOMO/LUMO analysis was done in order to characterize the electron density of the molecule. The calculations show that triple bond does not participate in intermolecular reactions which excludes the instability of novel materials as a reason for low production rate. △ Less

Submitted 27 March, 2015; originally announced March 2015.

Comments: 10 pages, 9 figures, 3 tables, method of synthesis, NMR analysis, DFT calculations

Composition determination of quaternary GaAsPN layers from single XRD measurement of quasi-forbidden (002) reflection

Authors: J. -M. Tilli, H. Jussila, K. M. Yu, T. Huhtio, M. Sopanen

Abstract: GaAsPN layers with a thickness of 30nm were grown on GaP substrates with metalorganic vapor phase epitaxy to study the feasibility of a single X-ray diffraction (XRD) measurement for full composition determination of quaternary layer material. The method is based on the peak intensity of a quasi-forbidden (002) reflection which is shown to vary with changing arsenic content for GaAsPN. The method… ▽ More GaAsPN layers with a thickness of 30nm were grown on GaP substrates with metalorganic vapor phase epitaxy to study the feasibility of a single X-ray diffraction (XRD) measurement for full composition determination of quaternary layer material. The method is based on the peak intensity of a quasi-forbidden (002) reflection which is shown to vary with changing arsenic content for GaAsPN. The method works for thin films with a wide range of arsenic contents and shows a clear variation in the reflection intensity as a function of changing layer composition. The obtained thicknesses and compositions of the grown layers are compared with accurate reference values obtained by Rutherford backscattering spectroscopy combined with nuclear reaction analysis measurements. Based on the comparison, the error in the XRD defined material composition becomes larger with increasing nitrogen content and layer thickness. This suggests that the dominating error source is the deteriorated crystal quality due to the nonsubstitutional incorporation of nitrogen into the crystal lattice and strain relaxation. The results reveal that the method overestimates the arsenic and nitrogen content within error margins of about 0.12 and about 0.025, respectively. △ Less

Submitted 22 May, 2014; originally announced May 2014.

Journal ref: J. Appl. Phys. 115 203102 (2014)

Response to the comment of K.W. Edmonds et al. on the article 'Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band'

Authors: M. Dobrowolska, X. Liu, J. K. Furdyna, M. Berciu, K. M. Yu, W. Walukiewicz

Abstract: Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the ferromagnetic semiconductor (Ga,Mn)As in thin film form. Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the ferromagnetic semiconductor (Ga,Mn)As in thin film form. △ Less

Submitted 16 November, 2012; originally announced November 2012.

Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions

Authors: Yu-Ren Lai, Kai-Fu Yu, Yong-Han Lin, Jong-Ching Wu, Juhn-Jong Lin

Abstract: Micrometer-sized Al/AlO$_{x}$/Y tunnel junctions were fabricated by the electron-beam lithography technique. The thin ($\approx$ 1.5--2 nm thickness) insulating AlO$_{x}$ layer was grown on top of the Al base electrode by O$_{2}$ glow discharge. The zero-bias conductances $G(T)$ and the current-voltage characteristics of the junctions were measured in a wide temperature range 1.5--300 K\@. In addi… ▽ More Micrometer-sized Al/AlO$_{x}$/Y tunnel junctions were fabricated by the electron-beam lithography technique. The thin ($\approx$ 1.5--2 nm thickness) insulating AlO$_{x}$ layer was grown on top of the Al base electrode by O$_{2}$ glow discharge. The zero-bias conductances $G(T)$ and the current-voltage characteristics of the junctions were measured in a wide temperature range 1.5--300 K\@. In addition to the direct tunneling conduction mechanism observed in low-$G$ junctions, high-$G$ junctions reveal a distinct charge transport process which manifests the thermally fluctuation-induced tunneling conduction (FITC) through short nanoconstrictions. We ascribe the experimental realization of the FITC mechanism to originating from the formations of "hot spots" (incomplete pinholes) in the AlO$_{x}$ layer owing to large junction-barrier interfacial roughness. △ Less

Submitted 15 August, 2012; originally announced August 2012.

Comments: 6 pages, 4 figures

Journal ref: AIP Advances 2, 032155 (2012)

Strategy for designing broadband epsilon-near-zero metamaterial with loss compensation by gain media

Authors: Lei Sun, Kin Wah Yu

Abstract: A strategy is proposed to design the broadband gain-doped epsilon-near-zero (GENZ) metamaterial. Based on the Milton representation of effective permittivity, the strategy starts in a dimensionless spectral space, where the effective permittivity of GENZ metamaterial is simply determined by a pole-zero structure corresponding to the operating frequency range. The physical structure of GENZ metamat… ▽ More A strategy is proposed to design the broadband gain-doped epsilon-near-zero (GENZ) metamaterial. Based on the Milton representation of effective permittivity, the strategy starts in a dimensionless spectral space, where the effective permittivity of GENZ metamaterial is simply determined by a pole-zero structure corresponding to the operating frequency range. The physical structure of GENZ metamaterial is retrieved from the pole-zero structure via a tractable inverse problem. The strategy is of great advantage in practical applications and also theoretically reveals the cancellation mechanism dominating the broadband near-zero permittivity phenomenon in the spectral space. △ Less

Submitted 8 June, 2012; originally announced June 2012.

Journal ref: Appl. Phys. Lett. 100, 261903 (2012)

Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band

Authors: M. Dobrowolska, K. Tivakornsasithorn, X. Liu, J. K. Furdyna, M. Berciu, K. M. Yu, W. Walukiewicz

Abstract: The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature TC. It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. In… ▽ More The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature TC. It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. In this paper we combine results of channeling experiments, which measure the concentrations both of Mn ions and of holes relevant to the ferromagnetic order, with magnetization, transport, and magneto-optical data to address this issue. Taken together, these measurements provide strong evidence that it is the location of the Fermi level within the impurity band that determines TC through determining the degree of hole localization. This finding differs drastically from the often accepted view that TC is controlled by valence band holes, thus opening new avenues for achieving higher values of TC. △ Less

Submitted 8 March, 2012; originally announced March 2012.

Comments: 5 figures, supplementary material included

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

Authors: C. D. Weis, C. C. Lo, V. Lang, A. M. Tyryshkin, R. E. George, K. M. Yu, J. Bokor, S. A. Lyon, J. J. L. Morton, T. Schenkel

Abstract: We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms… ▽ More We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon. △ Less

Submitted 26 February, 2012; v1 submitted 7 February, 2012; originally announced February 2012.

Comments: 4 pages, 4 figures

Rectification of Vortex Motion in a Circular Ratchet Channel

Authors: N. S. Lin, T. W. Heitmann, K. Yu, B. L. T. Plourde, V. R. Misko

Abstract: We study the dynamics of vortices in an asymmetric ring channel driven by an external current I in a Corbino setup. The asymmetric potential can rectify the motion of vortices and cause a net flow without any unbiased external drive, which is called ratchet effect. With an applied ac current, the potential can rectify the motion of vortices in the channel and induce a dc net flow. We show that the… ▽ More We study the dynamics of vortices in an asymmetric ring channel driven by an external current I in a Corbino setup. The asymmetric potential can rectify the motion of vortices and cause a net flow without any unbiased external drive, which is called ratchet effect. With an applied ac current, the potential can rectify the motion of vortices in the channel and induce a dc net flow. We show that the net flow of vortices strongly depends on vortex density and frequency of the driving current. Depending on the density, we distinguish a "single-vortex" rectification regime (low density) determined by the potential-energy landscape inside each cell of the channel (i.e., "hard" and "easy" directions of motion) and "multi-vortex", or "collective", rectification (high density) when the interaction between vortices becomes important. The frequency of the driving ac current determines a possible distance that a vortex could move during one period. For high frequency current, vortices only oscillate in the triangular cell. For low frequency, the vortex angular velocity $ω$ increases nearly linearly until the driving force reaches the maximum friction force in the hard direction. Furthermore, the commensurability between the number of vortices and the number of cells results in a stepwise $ω-I$ curve. Besides the integer steps, i.e., the large steps found in the single vortex case, we also found fractional steps corresponding to fractional ratio between the numbers of vortices and triangular cells. The principal and fractional frequencies for different currents are found, when the net flow of vortices reaches the maximum that is proportional to the frequency when the density of vortices is low. We have performed preliminary measurements on a device containing a single weak-pinning circular ratchet channel in a Corbino geometry and observed a substantial asymmetric vortex response. △ Less

Submitted 27 July, 2011; originally announced July 2011.

Comments: 12 pages, 12 figures

Journal ref: Phys. Rev. B 84,144511 (2011)

Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP

Authors: T. E. Winkler, P. R. Stone, Tian Li, K. M. Yu, A. Bonanni, O. D. Dubon

Abstract: We demonstrate the control of the hole concentration in Ga1-xMnxP over a wide range by introducing compensating vacancies. The resulting evolution of the Curie temperature from 51 K to 7.5 K is remarkably similar to that observed in Ga1-xMnxAs despite the dramatically different character of hole transport between the two material systems. The highly localized nature of holes in Ga1-xMnxP is reflec… ▽ More We demonstrate the control of the hole concentration in Ga1-xMnxP over a wide range by introducing compensating vacancies. The resulting evolution of the Curie temperature from 51 K to 7.5 K is remarkably similar to that observed in Ga1-xMnxAs despite the dramatically different character of hole transport between the two material systems. The highly localized nature of holes in Ga1-xMnxP is reflected in the accompanying increase in resistivity by many orders of magnitude. Based on variable-temperature resistivity data we present a general picture for hole conduction in which variable-range hop** is the dominant transport mechanism in the presence of compensation. △ Less

Submitted 14 December, 2010; v1 submitted 7 October, 2010; originally announced October 2010.

Comments: 3 pages, 3 figures; accepted for publication in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 98, 012103 (2011)

Microstrip superconducting quantum interference device amplifiers with submicron Josephson junctions: enhanced gain at gigahertz frequencies

Authors: M. P. DeFeo, P. Bhupathi, K. Yu, T. W. Heitmann, C. Song, R. McDermott, B. L. T. Plourde

Abstract: We present measurements of an amplifier based on a dc superconducting quantum interference device (SQUID) with submicron Al-AlOx-Al Josephson junctions. The small junction size reduces their self-capacitance and allows for the use of relatively large resistive shunts while maintaining nonhysteretic operation. This leads to an enhancement of the SQUID transfer function compared to SQUIDs with micro… ▽ More We present measurements of an amplifier based on a dc superconducting quantum interference device (SQUID) with submicron Al-AlOx-Al Josephson junctions. The small junction size reduces their self-capacitance and allows for the use of relatively large resistive shunts while maintaining nonhysteretic operation. This leads to an enhancement of the SQUID transfer function compared to SQUIDs with micron-scale junctions. The device layout is modified from that of a conventional SQUID to allow for coupling signals into the amplifier with a substantial mutual inductance for a relatively short microstrip coil. Measurements at 310 mK exhibit gain of 32 dB at 1.55 GHz. △ Less

Submitted 5 August, 2010; originally announced August 2010.

Comments: Version with high resolution figures at: http://physics.syr.edu/~bplourde/bltp-publications.htm

Vortex dynamics in superconducting channels with periodic constrictions

Authors: K. Yu, M. B. S. Hesselberth, P. H. Kes, B. L. T. Plourde

Abstract: Vortices confined to superconducting easy flow channels with periodic constrictions exhibit reversible oscillations in the critical current at which vortices begin moving as the external magnetic field is varied. This commensurability scales with the channel shape and arrangement, although screening effects play an important role. For large magnetic fields, some of the vortices become pinned outsi… ▽ More Vortices confined to superconducting easy flow channels with periodic constrictions exhibit reversible oscillations in the critical current at which vortices begin moving as the external magnetic field is varied. This commensurability scales with the channel shape and arrangement, although screening effects play an important role. For large magnetic fields, some of the vortices become pinned outside of the channels, leading to magnetic hysteresis in the critical current. Some channel configurations also exhibit a dynamical hysteresis in the flux-flow regime near the matching fields. △ Less

Submitted 19 May, 2010; v1 submitted 1 March, 2010; originally announced March 2010.

Journal ref: Phys. Rev. B 81, 184503 (2010)

Reducing microwave loss in superconducting resonators due to trapped vortices

Authors: C. Song, M. P. Defeo, K. Yu, B. L. T. Plourde

Abstract: Microwave resonators with high quality factors have enabled many recent breakthroughs with superconducting qubits and photon detectors, typically operated in shielded environments to reduce the ambient magnetic field. Insufficient shielding or pulsed control fields can introduce vortices, leading to reduced quality factors, although increased pinning can mitigate this effect. A narrow slot etche… ▽ More Microwave resonators with high quality factors have enabled many recent breakthroughs with superconducting qubits and photon detectors, typically operated in shielded environments to reduce the ambient magnetic field. Insufficient shielding or pulsed control fields can introduce vortices, leading to reduced quality factors, although increased pinning can mitigate this effect. A narrow slot etched into the resonator surface provides a straightforward method for pinning enhancement without otherwise affecting the resonator. Resonators patterned with such a slot exhibited over an order of magnitude reduction in the excess loss due to vortices compared with identical resonators from the same film with no slot. △ Less

Submitted 16 November, 2009; originally announced November 2009.

Journal ref: Appl. Phys. Lett. 95, 232501 (2009)

Tunable Localization and Oscillation of Coupled Plasmon Waves in Graded Plasmonic Chains

Authors: M. J. Zheng, J. J. Xiao, K. W. Yu

Abstract: The localization (confinement) of coupled plasmon modes, named as gradons, has been studied in metal nanoparticle chains immersed in a graded dielectric host. We exploited the time evolution of various initial wavepackets formed by the linear combination of the coupled modes. We found an important interplay between the localization of plasmonic gradons and the oscillation in such graded plasmoni… ▽ More The localization (confinement) of coupled plasmon modes, named as gradons, has been studied in metal nanoparticle chains immersed in a graded dielectric host. We exploited the time evolution of various initial wavepackets formed by the linear combination of the coupled modes. We found an important interplay between the localization of plasmonic gradons and the oscillation in such graded plasmonic chains. Unlike in optical superlattices, gradient cannot always lead to Bloch oscillations, which can only occur for wavepackets consisting of particular types of gradons. Moreover, the wavepackets will undergo different forms of oscillations. The correspondence can be applied to design a variety of optical devices by steering among various oscillations. △ Less

Submitted 7 November, 2009; originally announced November 2009.

Comments: Sumitted to Journal of Applied Physics

Journal ref: J. Appl. Phys. 106, 113307 (2009)

Localization of electric field distribution in graded core-shell metamaterials

Authors: En-Bo Wei, K. W. Yu

Abstract: The local electric field distribution has been investigated in a core-shell cylindrical metamaterial structure under the illumination of a uniform incident optical field. The structure consists of a homogeneous dielectric core, a shell of graded metal-dielectric metamaterial, embedded in a uniform matrix. In the quasi-static limit, the permittivity of the metamaterial is given by the graded Drud… ▽ More The local electric field distribution has been investigated in a core-shell cylindrical metamaterial structure under the illumination of a uniform incident optical field. The structure consists of a homogeneous dielectric core, a shell of graded metal-dielectric metamaterial, embedded in a uniform matrix. In the quasi-static limit, the permittivity of the metamaterial is given by the graded Drude model. The local electric potentials and hence the electric fields have been derived exactly and analytically in terms of hyper-geometric functions. Our results showed that the peak of the electric field inside the cylindrical shell can be confined in a desired position by varying the frequency of the optical field and the parameters of the graded profiles. Thus, by fabricating graded metamaterials, it is possible to control electric field distribution spatially. We offer an intuitive explanation for the gradation-controlled electric field distribution. △ Less

Submitted 7 November, 2009; originally announced November 2009.

Journal ref: Phys. Rev. E 80, 046607 (2009)

Microwave response of vortices in superconducting thin films of Re and Al

Authors: C. Song, T. W. Heitmann, M. P. DeFeo, K. Yu, R. McDermott, M. Neeley, John M. Martinis, B. L. T. Plourde

Abstract: Vortices in superconductors driven at microwave frequencies exhibit a response related to the interplay between the vortex viscosity, pinning strength, and flux creep effects. At the same time, the trap** of vortices in superconducting microwave resonant circuits contributes excess loss and can result in substantial reductions in the quality factor. Thus, understanding the microwave vortex res… ▽ More Vortices in superconductors driven at microwave frequencies exhibit a response related to the interplay between the vortex viscosity, pinning strength, and flux creep effects. At the same time, the trap** of vortices in superconducting microwave resonant circuits contributes excess loss and can result in substantial reductions in the quality factor. Thus, understanding the microwave vortex response in superconducting thin films is important for the design of such circuits, including superconducting qubits and photon detectors, which are typically operated in small, but non-zero, magnetic fields. By cooling in fields of the order of 100 $μ$T and below, we have characterized the magnetic field and frequency dependence of the microwave response of a small density of vortices in resonators fabricated from thin films of Re and Al, which are common materials used in superconducting microwave circuits. Above a certain threshold cooling field, which is different for the Re and Al films, vortices become trapped in the resonators. Vortices in the Al resonators contribute greater loss and are influenced more strongly by flux creep effects than in the Re resonators. This different behavior can be described in the framework of a general vortex dynamics model. △ Less

Submitted 29 May, 2009; v1 submitted 18 December, 2008; originally announced December 2008.

Comments: Published in Physical Review B 79,174512(2009); preprint version with higher resolution figures available at http://physics.syr.edu/~bplourde/bltp-publications.htm

Journal ref: Phys. Rev. B 79,174512(2009)

Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy

Authors: P. R. Stone, C. Bihler, M. Kraus, M. A. Scarpulla, J. W. Beeman, K. M. Yu, M. S. Brandt, O. D. Dubon

Abstract: We report the effect of dilute alloying of the anion sublattice with S on the in-plane uniaxial magnetic anisotropy and magnetization reversal process in Ga1-xMnxP as measured by both ferromagnetic resonance (FMR) and superconducting quantum interference device (SQUID) magnetometry. At T=5K, raising the S concentration increases the uniaxial magnetic anisotropy between in-plane <011> directions… ▽ More We report the effect of dilute alloying of the anion sublattice with S on the in-plane uniaxial magnetic anisotropy and magnetization reversal process in Ga1-xMnxP as measured by both ferromagnetic resonance (FMR) and superconducting quantum interference device (SQUID) magnetometry. At T=5K, raising the S concentration increases the uniaxial magnetic anisotropy between in-plane <011> directions while decreasing the magnitude of the (negative) cubic anisotropy field. Simulation of the SQUID magnetometry indicates that the energy required for the nucleation and growth of domain walls decreases with increasing y. These combined effects have a marked influence on the shape of the field-dependent magnetization curves; while the direction remains the easy axis in the plane of the film, the field dependence of the magnetization develops double hysteresis loops in the [011] direction as the S concentration increases similar to those observed for perpendicular magnetization reversal in lightly doped Ga1-xMnxAs. The incidence of double hysteresis loops is explained with a simple model whereby magnetization reversal occurs by a combination of coherent spin rotation and noncoherent spin switching, which is consistent with both FMR and magnetometry experiments. The evolution of magnetic properties with S concentration is attributed to compensation of Mn acceptors by S donors, which results in a lowering of the concentration of holes that mediate ferromagnetism. △ Less

Submitted 3 November, 2008; originally announced November 2008.

Comments: 37 pages, 9 figures, 3 tables

Journal ref: Phys. Rev. B 78, 214421 (2008)

Tunable photonic Bloch oscillations in electrically modulated photonic crystals

Authors: Gang Wang, Ji ** Huang, Kin Wah Yu

Abstract: We exploit theoretically the occurrence and tunability of photonic Bloch oscillations (PBOs) in one-dimensional photonic crystals (PCs) containing nonlinear composites. Because of the enhanced third-order nonlinearity (Kerr type nonlinearity) of composites, photons undergo oscillations inside tilted photonic bands, which are achieved by the application of graded external pump electric fields on… ▽ More We exploit theoretically the occurrence and tunability of photonic Bloch oscillations (PBOs) in one-dimensional photonic crystals (PCs) containing nonlinear composites. Because of the enhanced third-order nonlinearity (Kerr type nonlinearity) of composites, photons undergo oscillations inside tilted photonic bands, which are achieved by the application of graded external pump electric fields on such PCs, varying along the direction perpendicular to the surface of layers. The tunability of PBOs (including amplitude and period) is readily achieved by changing the field gradient. With an appropriate graded pump AC or DC electric field, terahertz PBOs can appear and cover a terahertz band in electromagnetic spectrum. △ Less

Submitted 16 October, 2008; originally announced October 2008.

Journal ref: Optics Letters, Vol. 33, 2200 (2008)