Showing 1–50 of 184 results for author: Yu, G

Strongly coupled magneto-exciton condensates in large-angle twisted double bilayer graphene

Authors: Qingxin Li, Yiwei Chen, LingNan Wei, Hong Chen, Yan Huang, Yujian Zhu, Wang Zhu, Dongdong An, Junwei Song, Qikang Gan, Qi Zhang, Kenji Watanabe, Takashi Taniguchi, Xiaoyang Shi, Kostya S. Novoselov, Rui Wang, Geliang Yu, Lei Wang

Abstract: Excitons, the bosonic quasiparticle emerging from Coulomb interaction between electrons and holes, will undergo a Bose-Einstein condensation(BEC) and transition into a superfluid state with global phase coherence at low temperatures. An important platform to study such excitonic physics is built on double-layer quantum wells or recent two-dimensional material heterostructures, where two parallel p… ▽ More Excitons, the bosonic quasiparticle emerging from Coulomb interaction between electrons and holes, will undergo a Bose-Einstein condensation(BEC) and transition into a superfluid state with global phase coherence at low temperatures. An important platform to study such excitonic physics is built on double-layer quantum wells or recent two-dimensional material heterostructures, where two parallel planes of electrons and holes are separated by a thin insulating layer. Lowering this separation distance ($d$) enhances the interlayer Coulomb interaction thereby strengthens the exciton binding energy. However, an exceedingly small $d$ will lead to the undesired interlayer tunneling, which results the annihilation of excitons. Here, we report the observation of a sequences of robust exciton condensates(ECs) in double bilayer graphenes twisted to $\sim 10^\circ$ with no insulating mid-layer. The large momentum mismatch between the two graphene layers well suppress the interlayer tunneling, allowing us to reach the separation lower limit $\sim$ 0.334 nm and investigate ECs in the extreme coupling regime. Carrying out transport measurements on the bulk and edge of the devices, we find incompressible states corresponding to ECs when both layers are half-filled in the $N=0$ and $N=1$ Landau levels (LLs). The comparison between these ECs and theoretical calculations suggest that the low-energy charged excitation of ECs can be meron-antimeron or particle-hole pair, which relies on both LL index and carrier type. Our results establish large-angle twisted bilayers as an experimental platform with extreme coupling strength for studying quantum bosonic phase and its low-energy excitations. △ Less

Submitted 19 May, 2024; originally announced May 2024.

Sign-Alternating Thermoelectric Quantum Oscillations and Insulating Landau Levels in Monolayer WTe2

Authors: Yue Tang, Tiancheng Song, Haosen Guan, Yanyu Jia, Guo Yu, Zhaoyi Joy Zheng, Ayelet J. Uzan, Michael Onyszczak, Ratnadwip Singha, Xin Gui, Kenji Watanabe, Takashi Taniguchi, Robert J. Cava, Leslie M. Schoop, N. P. Ong, Sanfeng Wu

Abstract: The detection of Landau-level-like energy structures near the chemical potential of an insulator is essential to the search for a class of correlated electronic matter hosting charge-neutral fermions and Fermi surfaces, a long-proposed concept that remains elusive experimentally. Here we introduce and demonstrate that the magneto-thermoelectric response of a quantum insulator can reveal critical i… ▽ More The detection of Landau-level-like energy structures near the chemical potential of an insulator is essential to the search for a class of correlated electronic matter hosting charge-neutral fermions and Fermi surfaces, a long-proposed concept that remains elusive experimentally. Here we introduce and demonstrate that the magneto-thermoelectric response of a quantum insulator can reveal critical information not available via other approaches. We report large quantum oscillations (QOs) in the Seebeck response of the hole-doped insulating state of monolayer tungsten ditelluride (WTe2) in magnetic fields. The QOs remarkably undergo sign-changes as the field is swept, mimicking those in metals with Landau quantization. The sign-change in the thermoelectric response directly implies the presence of a field-induced Landau-level-like structure at the chemical potential of the insulator. Our results reinforce WTe2 as a platform for investigating insulating Landau levels and mobile neutral fermions in two-dimensional insulators. △ Less

Submitted 15 May, 2024; originally announced May 2024.

Comments: 19 pages, 9 figures

Robust field-free switching using large unconventional spin-orbit torque in an all-van der Waals heterostructure

Authors: Yiyang Zhang, Xiaolin Ren, Ruizi Liu, Zehan Chen, Xuezhao Wu, Jie Pang, Wei Wang, Guibin Lan, Kenji Watanabe, Takashi Taniguchi, Youguo Shi, Guoqiang Yu, Qiming Shao

Abstract: The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in… ▽ More The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in all-vdW heterostructures, large unconventional SOT remains elusive and the robustness of the field-free switching against external magnetic field hasn't been examined, which hinder further applications. Here we demonstrate the field-free switching in an all-vdW heterostructure combining a type-II Weyl semimetal TaIrTe4 and above-room-temperature ferromagnet Fe3GaTe2. The fully field-free switching can be achieved at 2.56 x 10^10 A per m2 at 300K and a large SOT efficiency of the out-of-plane polarized spin current generated by TaIrTe4 is determined to be 0.37. Moreover, we find that the switching polarity cannot be changed until the external in-plane magnetic field reaches 252mT, indicating a robust switching against the magnetic field. The numerical simulation suggests the large unconventional SOT reduces the switching current density and enhances the robustness of the switching. Our work shows that all-vdW heterostructures are promising candidates for future highly efficient and stable SOT-based devices. △ Less

Submitted 10 May, 2024; originally announced May 2024.

Symmetry Strategy for Rapid Discovery of Abundant Fractional Quantum Ferroelectrics

Authors: Guoliang Yu, Junyi Ji, Changsong Xu, H. J. Xiang

Abstract: Traditional ferroelectrics are limited by Neumann's principle, which confines exploration of ferroelectrics within polar point groups. Our recent work [Nat. Commun. 15, 135, (2024)] proposes the concept of fractional quantum ferroelectricity (FQFE) that extend the playground of ferroelectricity to non-polar point groups. Here, we apply group theory and introduce an efficient symmetry strategy to i… ▽ More Traditional ferroelectrics are limited by Neumann's principle, which confines exploration of ferroelectrics within polar point groups. Our recent work [Nat. Commun. 15, 135, (2024)] proposes the concept of fractional quantum ferroelectricity (FQFE) that extend the playground of ferroelectricity to non-polar point groups. Here, we apply group theory and introduce an efficient symmetry strategy to identify FQFE candidates. Integrated with a high-throughput screening scheme, we go through 171,527 materials and identify 202 potential FQFE candidates, which are already experimentally synthesized. In addition, we point out that the essence of FQFE is fractional atomic displacements with respect to lattice vectors, which can actually result in both fractional (type-I) and integer (type-II) quantized polarization, respectively. Through performing first-principles calculations, we verify the symmetry-predicted switchable FQFE properties in bulk AlAgS2 and monolayer HgI2. Notably, AlAgS2 exhibits an ultra-low switching barrier of 23 meV/f.u. and interlocked in-plane/out-of-plane polarization, while HgI2 demonstrates large spontaneous polarization of 42 μC/cm2. Our findings not only advance the understanding on FQFE, but also offer guidance for experimental exploration and design of novel ferroelectric materials. △ Less

Submitted 29 April, 2024; originally announced April 2024.

Comments: 16 pages, 4 figures

Tailoring coercive fields and the Curie temperature via proximity coupling in WSe$_2$/Fe$_3$GeTe$_2$ van der Waals heterostructures

Authors: Guodong Ma, Renjun Du, Fuzhuo Lian, Song Bao, Zi**g Guo, Xiaofan Cai, **gkuan Xiao, Yaqing Han, Di Zhang, Siqi Jiang, Jiabei Huang, Xinglong Wu, Alexander S. Mayorov, **sheng Wen, Lei Wang, Geliang Yu

Abstract: Hybrid structures consisting of two-dimensional (2D) magnets and semiconductors have exhibited extensive functionalities in spintronics and opto-spintronics. In this work, we have fabricated WSe$_2$/Fe$_3$GeTe$_2$ van der Waals (vdW) heterostructures and investigated the proximity effects on 2D magnetism. Through reflective magnetic circular dichroism (RMCD), we have observed a temperature-depende… ▽ More Hybrid structures consisting of two-dimensional (2D) magnets and semiconductors have exhibited extensive functionalities in spintronics and opto-spintronics. In this work, we have fabricated WSe$_2$/Fe$_3$GeTe$_2$ van der Waals (vdW) heterostructures and investigated the proximity effects on 2D magnetism. Through reflective magnetic circular dichroism (RMCD), we have observed a temperature-dependent modulation of magnetic order in the heterostructure. For temperatures above $40$ K, WSe$_2$-covered Fe$_3$GeTe$_2$ exhibits a larger coercive field than that observed in bare Fe$_3$GeTe$_2$, accompanied by a noticeable enhancement of the Curie temperature by $21$ K. This strengthening suggests an increase in magnetic anisotropy in the interfacial Fe$_3$GeTe$_2$ layer, which can be attributed to the spin-orbit coupling (SOC) proximity effect induced by the adjacent WSe$_2$ layers. However, at much lower temperatures ($T<20$ K), a non-monotonic modification of the coercive field is observed, showing both reduction and enhancement, which depends on the thickness of the WSe$_2$ and Fe$_3$GeTe$_2$ layers. Moreover, an unconventional two-step magnetization process emerges in the heterostructure, indicating the short-range nature of SOC proximity effects. Our findings revealing proximity effects on 2D magnetism may shed light on the design of future spintronic and memory devices based on 2D magnetic heterostructures. △ Less

Submitted 28 April, 2024; originally announced April 2024.

Gate control of 2D magnetism in tri- and four-layers $\rm CrI_3$/graphene heterostructures

Authors: ** Wang, Fuzhuo Lian, Renjun Du, Xiaofan Cai, Song Bao, Yaqing Han, **gkuan Xiao, Kenji Watanabe, Takashi Taniguchi, **sheng Wen, Hongxin Yang, Alexander S. Mayorov, Lei Wang, Geliang Yu

Abstract: We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of $\rm CrI_3$. We do not observe the expected magnetic exchange coupling in the graphene but instead discover proximity effects featuring gate and magnetic field tunability. The tunability of gate voltage is manifested in the alignment of the lowest conduction band of… ▽ More We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of $\rm CrI_3$. We do not observe the expected magnetic exchange coupling in the graphene but instead discover proximity effects featuring gate and magnetic field tunability. The tunability of gate voltage is manifested in the alignment of the lowest conduction band of $\rm CrI_3$ and the Fermi level of graphene, which can be controlled by the gate voltage. The coexistence of the normal and atypical quantum Hall effects in our device also corresponds to gate-control modulation do**. The lowest conduction band depends on the magnetic states of the $\rm CrI_3$ and can be altered by the magnetic field, which corresponds to the resistance loops during back-and-forth sweeps of the magnetic field. Our results serve as a reference for exploiting the magnetic proximity effects in graphene. △ Less

Submitted 27 April, 2024; originally announced April 2024.

Ferroelectricity in twisted double bilayer graphene

Authors: Renjun Du, **gkuan Xiao, Di Zhang, Xiaofan Cai, Siqi Jiang, Fuzhuo Lian, Kenji Watanabe, Takashi Taniguchi, Lei Wang, Geliang Yu

Abstract: Two-dimensional ferroelectrics can maintain vertical polarization up to room temperature, and are, therefore, promising for next-generation nonvolatile memories. Although natural two-dimensional ferroelectrics are few, moiré superlattices provide us with a generalized method to construct ferroelectrics from non-ferroelectric parent materials. We report a realization of ferroelectric hysteresis in… ▽ More Two-dimensional ferroelectrics can maintain vertical polarization up to room temperature, and are, therefore, promising for next-generation nonvolatile memories. Although natural two-dimensional ferroelectrics are few, moiré superlattices provide us with a generalized method to construct ferroelectrics from non-ferroelectric parent materials. We report a realization of ferroelectric hysteresis in a AB-BA stacked twisted double bilayer graphene (TDBG) system. The ferroelectric polarization is prominent at zero external displacement field and reduces upon increasing displacement fields. TDBG in the AB-BA configuration possesses a superlattice of non-centrosymmetric domains, exhibiting alternatively switchable polarities even without the assistance of any boron nitride layers; however, in the AB-AB stacking case, the development of polarized domains necessitates the presence of a second superlattice induced by the adjacent boron nitride layer. Therefore, twisted multilayer graphene systems offer us a fascinating field to explore two-dimensional ferroelectricity. △ Less

Submitted 27 April, 2024; originally announced April 2024.

Blood Works for Graphene Production

Authors: Xiaofan Cai, Ming Li, Chao Chen, Renjun Du, Zi**g Guo, ** Wang, Guodong Ma, Xinglong Wu, Zhiyuan Wang, Yaqing Han, Fuzhuo Lian, **gkuan Xiao, Siqi Jiang, Lei Wang, Alexander S. Mayorov, Libo Gao, Kostya S. Novoselov, Geliang Yu

Abstract: Blood, a ubiquitous and fundamental carbohydrate material composed of plasma, red blood cells, white blood cells, and platelets, has been playing an important role in biology, life science, history, and religious study, while graphene has garnered significant attention due to its exceptional properties and extensive range of potential applications. Achieving environmentally friendly, cost-effectiv… ▽ More Blood, a ubiquitous and fundamental carbohydrate material composed of plasma, red blood cells, white blood cells, and platelets, has been playing an important role in biology, life science, history, and religious study, while graphene has garnered significant attention due to its exceptional properties and extensive range of potential applications. Achieving environmentally friendly, cost-effective growth using hybrid precursors and obtaining high-quality graphene through a straightforward CVD process has been traditionally considered mutually exclusive. This study demonstrates that we can produce high-quality graphene domains with controlled thickness through a one-step growth process at atmospheric pressure using blood as a precursor. Raman spectroscopy confirms the uniformity of the blood-grown graphene films, and observing the half-integer quantum Hall effect in the measured devices highlights its outstanding electronic properties. This unprecedented approach opens possibilities for blood application, facilitating an unconventional route in graphene growth applications. △ Less

Submitted 27 April, 2024; originally announced April 2024.

Electrical-controllable antiferromagnet-based tunnel junction

Authors: Lei Han, Xuming Luo, Yingqian Xu, Hua Bai, Wenxuan Zhu, Yuxiang Zhu, Guoqiang Yu, Cheng Song, Feng Pan

Abstract: Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we have advanced towards this goal by achieving an electrical-controllable antiferromagnet-based tunnel junction of Pt/Co/Pt/Co/IrMn/MgO/Pt. The exchange coupling b… ▽ More Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we have advanced towards this goal by achieving an electrical-controllable antiferromagnet-based tunnel junction of Pt/Co/Pt/Co/IrMn/MgO/Pt. The exchange coupling between antiferromagnetic IrMn and Co/Pt perpendicular magnetic multilayers results in the formation of interfacial exchange bias and exchange spring in IrMn. Encoding information states 0 and 1 is realized through the exchange spring in IrMn, which can be electrically written by spin-orbit torque switching with high cyclability and electrically read by antiferromagnetic tunneling anisotropic magnetoresistance. Combining spin-orbit torque switching of both exchange spring andexchange bias, 16 Boolean logic operation is successfully demonstrated. With both memory and logic functionalities integrated into our electrical-controllable antiferromagnetic-based tunnel junction, we chart the course toward high-performance antiferromagnetic logic-in-memory. △ Less

Submitted 1 April, 2024; originally announced April 2024.

Comments: 20 pages, 4 figures

Superconductivity from On-Chip Metallization on 2D Topological Chalcogenides

Authors: Yanyu Jia, Guo Yu, Tiancheng Song, Fang Yuan, Ayelet J Uzan, Yue Tang, Pengjie Wang, Ratnadwip Singha, Michael Onyszczak, Zhaoyi Joy Zheng, Kenji Watanabe, Takashi Taniguchi, Leslie M Schoop, Sanfeng Wu

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) is a versatile class of quantum materials of interest to various fields including, e.g., nanoelectronics, optical devices, and topological and correlated quantum matter. Tailoring the electronic properties of TMDs is essential to their applications in many directions. Here, we report that a highly controllable and uniform on-chip 2D meta… ▽ More Two-dimensional (2D) transition metal dichalcogenides (TMDs) is a versatile class of quantum materials of interest to various fields including, e.g., nanoelectronics, optical devices, and topological and correlated quantum matter. Tailoring the electronic properties of TMDs is essential to their applications in many directions. Here, we report that a highly controllable and uniform on-chip 2D metallization process converts a class of atomically thin TMDs into robust superconductors, a property belonging to none of the starting materials. As examples, we demonstrate the introduction of superconductivity into a class of 2D air-sensitive topological TMDs, including monolayers of Td-WTe2, 1T'-MoTe2 and 2H-MoTe2, as well as their natural and twisted bilayers, metalized with an ultrathin layer of Palladium. This class of TMDs are known to exhibit intriguing topological phases ranging from topological insulator, Weyl semimetal to fractional Chern insulator. The unique, high-quality two-dimensional metallization process is based on our recent findings of the long-distance, non-Fickian in-plane mass transport and chemistry in 2D that occur at relatively low temperatures and in devices fully encapsulated with inert insulating layers. Highly compatible with existing nanofabrication techniques for van der Waals (vdW) stacks, our results offer a route to designing and engineering superconductivity and topological phases in a class of correlated 2D materials. △ Less

Submitted 30 April, 2024; v1 submitted 28 March, 2024; originally announced March 2024.

Comments: 22 pages, 12 figures. Accepted to Physical Review X

Polarization multistates in antiferroelectric van der Waals materials

Authors: Guoliang Yu, Shengxian Li, Anlian Pan, Mingxing Chen, Zhenyu Zhang

Abstract: The bistability of charge polarization in ferroelectric materials has long been the basis of ferroelectric devices. However, the ferroelectricity tends to be vanishing as the thickness of materials is reduced to a few nanometers or thinner due to the depolarization field. Instead, they show a paraelectric or an antiferroelectric ordering in the ultra-thin limit, which is unfavorable for their appl… ▽ More The bistability of charge polarization in ferroelectric materials has long been the basis of ferroelectric devices. However, the ferroelectricity tends to be vanishing as the thickness of materials is reduced to a few nanometers or thinner due to the depolarization field. Instead, they show a paraelectric or an antiferroelectric ordering in the ultra-thin limit, which is unfavorable for their applications in devices. Here we uncover polarization multistates in thin films of van der Waals materials, in which the individual monolayers have an antiferroelectric ordering with out-of-plane polarizations. This property results from a unique combination of the polarization and layer degrees of freedom. Using first-principles calculations, we demonstrate that bilayers and trilayers of the CuInP$_2$S$_6$ family possess quintuple and septuple polarization states., respectively. Our climbing image nudged elastic band calculations for the bilayers and trilayers of CuInP$_2$S$_6$ and CuCrP$_2$S$_6$ further show that the states can be transformed into each other under appropriate external electric fields, for which a unique layer-selective half-layer-by-half-layer flip** mechanism governs the transformings. Our study opens up a door to design unusual polarization states using intrinsic degrees of freedom of layered antiferroelectrics for the next-generation ferroelectric devices that go beyond the bistability paradigm. △ Less

Submitted 21 December, 2023; originally announced December 2023.

Comments: Submitted in June 2023

Visualization of skyrmion-superconducting vortex pairs in a chiral magnet-superconductor heterostructure

Authors: Yongjie Xie, Ang Qian, Bin He, Yubiao Wu, Sheng Wang, Bing Xu, Guoqiang Yu, Xiufeng Han, Xianggang Qiu

Abstract: Magnetic skyrmions, the topological states possessing chiral magnetic structure with non-trivial topology, have been widely investigated as a promising candidate for spintronic devices. They can also couple with superconducting vortices to form skyrmion-vortex pairs, hosting Majorana zero mode which is a potential candidate for topological quantum computering. A lot of theoretical proposals have b… ▽ More Magnetic skyrmions, the topological states possessing chiral magnetic structure with non-trivial topology, have been widely investigated as a promising candidate for spintronic devices. They can also couple with superconducting vortices to form skyrmion-vortex pairs, hosting Majorana zero mode which is a potential candidate for topological quantum computering. A lot of theoretical proposals have been put forward on constructing skyrmion-vortex pairs in heterostructures of chiral magnet and superconductor. Nevertheless, how to generate skyrmion-vortex pairs in a controllable way experimentally remains a significant challenge. We have designed a heterostructure of chiral magnet and superconductor [CoFeB/Ir/Ta]7/Nb in which zero field Néel-type skyrmions can be stabilized and the superconducting vortices can couple with the skyrmions when Nb is in the superconducting state. We have directly observed the formation of skyrmion-superconducting vortex pairs which is dependent on the direction of the applied magnetic field. Our results provide an effective method to manipulate the quantum states of skyrmions with the help of superconducting vortices, which can be used to explore the possible existence of Majorana zero mode for future quantum computation. △ Less

Submitted 20 October, 2023; originally announced October 2023.

Comments: 17 pages, 3 figures

Crystal facet orientated Altermagnets for detecting ferromagnetic and antiferromagnetic states by giant tunneling magnetoresistance effect

Authors: Boyuan Chi, Leina Jiang, Yu Zhu, Guoqiang Yu, Caihua Wan, Jia Zhang, Xiufeng Han

Abstract: Emerging altermagnetic materials with vanishing net magnetizations and unique band structures have been envisioned as an ideal electrode to design antiferromagnetic tunnel junctions. Their momentum-resolved spin splitting in band structures defines a spin-polarized Fermi surface, which allows altermagnetic materials to polarize current as a ferromagnet, when the current flows along specific direct… ▽ More Emerging altermagnetic materials with vanishing net magnetizations and unique band structures have been envisioned as an ideal electrode to design antiferromagnetic tunnel junctions. Their momentum-resolved spin splitting in band structures defines a spin-polarized Fermi surface, which allows altermagnetic materials to polarize current as a ferromagnet, when the current flows along specific directions relevant to their altermagnetism. Here, we design an Altermagnet/Insulator barrier/Ferromagnet junction, renamed as altermagnetic tunnel junction (ATMTJ), using RuO$_2$/TiO$_2$/CrO$_2$ as a prototype. Through first-principles calculations, we investigate the tunneling properties of the ATMTJ along the [001] and [110] directions, which shows that the tunneling magnetoresistance (TMR) is almost zero when the current flows along the [001] direction, while it can reach as high as 6100\% with current flows along the [110] direction. The spin-resolved conduction channels of the altermagnetic RuO$_2$ electrode are found responsible for this momentum-dependent (or transport-direction-dependent) TMR effect. Furthermore, this ATMTJ can also be used to readout the Néel vector of the altermagnetic electrode RuO$_2$. Our work promotes the understanding toward the altermagnetic materials and provides an alternative way to design magnetic tunnel junctions with ultrahigh TMR ratios and robustness of the altermagnetic electrode against external disturbance, which broadens the application avenue for antiferromagnetic spintronic devices. △ Less

Submitted 20 November, 2023; v1 submitted 18 September, 2023; originally announced September 2023.

A Platform for Far-Infrared Spectroscopy of Quantum Materials at Millikelvin Temperatures

Authors: Michael Onyszczak, Ayelet J. Uzan, Yue Tang, Pengjie Wang, Yanyu Jia, Guo Yu, Tiancheng Song, Ratnadwip Singha, Jason F. Khoury, Leslie M. Schoop, Sanfeng Wu

Abstract: Optical spectroscopy of quantum materials at ultralow temperatures is rarely explored, yet it may provide critical characterizations of quantum phases not possible using other approaches. We describe the development of a novel experimental platform that enables optical spectroscopic studies, together with standard electronic transport, of materials at millikelvin temperatures inside a dilution ref… ▽ More Optical spectroscopy of quantum materials at ultralow temperatures is rarely explored, yet it may provide critical characterizations of quantum phases not possible using other approaches. We describe the development of a novel experimental platform that enables optical spectroscopic studies, together with standard electronic transport, of materials at millikelvin temperatures inside a dilution refrigerator. The instrument is capable of measuring both bulk crystals and micron-sized two-dimensional van der Waals materials and devices. We demonstrate the performance by implementing photocurrent-based Fourier transform infrared spectroscopy on a monolayer WTe$_2$ device and a multilayer 1T-TaS$_2$ crystal, with a spectral range available from the near-infrared to the terahertz regime and in magnetic fields up to 5 T. In the far-infrared regime, we achieve spectroscopic measurements at a base temperature as low as ~ 43 mK and a sample electron temperature of ~ 450 mK. Possible experiments and potential future upgrades of this versatile instrumental platform are envisioned. △ Less

Submitted 25 August, 2023; v1 submitted 1 August, 2023; originally announced August 2023.

Comments: 14 pages, 6 figures, typos corrected

Evidence for Two Dimensional Anisotropic Luttinger Liquids at Millikelvin Temperatures

Authors: Guo Yu, Pengjie Wang, Ayelet J. Uzan, Yanyu Jia, Michael Onyszczak, Ratnadwip Singha, Xin Gui, Tiancheng Song, Yue Tang, Kenji Watanabe, Takashi Taniguchi, Robert J. Cava, Leslie M. Schoop, Sanfeng Wu

Abstract: While Landau's Fermi liquid theory provides the standard description for two- and three-dimensional (2D/3D) conductors, the physics of interacting one-dimensional (1D) conductors is governed by the distinct Luttinger liquid (LL) theory. Can a LL-like state, in which electronic excitations are fractionalized modes, emerge in a 2D system as a stable zero-temperature phase? This long-standing questio… ▽ More While Landau's Fermi liquid theory provides the standard description for two- and three-dimensional (2D/3D) conductors, the physics of interacting one-dimensional (1D) conductors is governed by the distinct Luttinger liquid (LL) theory. Can a LL-like state, in which electronic excitations are fractionalized modes, emerge in a 2D system as a stable zero-temperature phase? This long-standing question, first brought up by Anderson decades ago, is crucial in the study of non-Fermi liquids but remains unsettled. A recent experiment identified a moiré superlattice of twisted bilayer tungsten ditelluride (tWTe_2) with a small interlayer twist angle as a 2D host of the LL physics at temperatures of a few kelvins. Here we report experimental evidence for a 2D anisotropic LL state in a substantially reduced temperature regime, down to at least 50 mK, spontaneously formed in a tWTe_2 system with a twist angle of ~ 3 degree. While the system is metallic-like and nearly isotropic above 2 K, a dramatically enhanced electronic anisotropy develops in the millikelvin regime, featuring distinct transport behaviors along two orthogonal in-plane directions. In the strongly anisotropic phase, we observe transport characteristics of a 2D LL phase, i.e., the universal power law scaling behaviors in across-wire conductance and a zero-bias dip in the differential resistance along the wire direction. Our results represent a step forward in the search for stable LL physics beyond 1D and related unconventional quantum matter. △ Less

Submitted 28 July, 2023; originally announced July 2023.

Comments: 24 pages, 4 main figures and 10 extended data figures

Journal ref: Nature Communications 14, 7025 (2023)

Surface-Confined Two-Dimensional Crystal Growth on a Monolayer

Authors: Yanyu Jia, Fang Yuan, Guangming Cheng, Yue Tang, Guo Yu, Tiancheng Song, Pengjie Wang, Ratnadwip Singha, Ayelet July Uzan, Michael Onyszczak, Kenji Watanabe, Takashi Taniguchi, Nan Yao, Leslie M Schoop, Sanfeng Wu

Abstract: Conventional vapor deposition or epitaxial growth of two-dimensional (2D) materials and heterostructures is conducted in a large chamber in which masses transport from the source to the substrate. Here we report a chamber-free, on-chip approach for growing a 2D crystalline structures directly in a nanoscale surface-confined 2D space. The method is based on a surprising discovery of a rapid, long-d… ▽ More Conventional vapor deposition or epitaxial growth of two-dimensional (2D) materials and heterostructures is conducted in a large chamber in which masses transport from the source to the substrate. Here we report a chamber-free, on-chip approach for growing a 2D crystalline structures directly in a nanoscale surface-confined 2D space. The method is based on a surprising discovery of a rapid, long-distance, non-Fickian transport of a uniform layer of atomically thin palladium (Pd) on a monolayer crystal of tungsten ditelluride (WTe2), at temperatures well below the known melting points of all materials involved. The resulting nanoconfined growth realizes a controlled formation of a stable new 2D crystalline material, Pd7WTe2 , when the monolayer seed is either free-standing or fully encapsulated in a van der Waals stack. The approach is generalizable and highly compatible with nanodevice fabrication, promising to expand the library of 2D materials and their functionalities. △ Less

Submitted 12 July, 2023; originally announced July 2023.

Journal ref: Nat. Synth (2023)

Nonsteady dynamics at the dynamic depinning transition in the two-dimensional Gaussian random-field Ising model

Authors: Xiaohui Qian, Gaotian Yu, Nengji Zhou

Abstract: With large-scale Monte Carlo simulations, we investigate the nonsteady relaxation at the dynamic depinning transition in the two-dimensional Gaussian random-field Ising model. The dynamic scaling behavior is carefully analyzed, and the transition fields as well as static and dynamic exponents are accurately determined based on the short-time dynamic scaling form. Different from the usual assumptio… ▽ More With large-scale Monte Carlo simulations, we investigate the nonsteady relaxation at the dynamic depinning transition in the two-dimensional Gaussian random-field Ising model. The dynamic scaling behavior is carefully analyzed, and the transition fields as well as static and dynamic exponents are accurately determined based on the short-time dynamic scaling form. Different from the usual assumption, two distinguished growth processes of spatial correlation lengths for the velocity and height of the domain wall are found. Thus, the universality class of the depinning transition is established, which significantly differs from that of the quenched disorder equation but agrees with that of the recent experiment as well as other simulations works. Under the influence of the mesoscopic time regime, the crossover from the second-order phase transition to the first-order one is confirmed in the weak-disorder regime, yielding an abnormal disorder-dependent nature of the criticality. △ Less

Submitted 19 June, 2023; originally announced June 2023.

Comments: 10 pages, 12 figures

Journal ref: Phys. Rev. E 107(6): 064108, 2023

Stochastic p-Bits Based on Spin-Orbit Torque Magnetic Tunnel Junctions

Authors: X. H. Li, M. K. Zhao, R. Zhang, C. H. Wan, Y. Z. Wang, X. M. Luo, S. Q. Liu, J. H. Xia, G. Q. Yu, X. F. Han

Abstract: Stochastic p-Bit devices play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms such as the simulated annealing. In this work, we focus on Stochastic p-Bits based on high-barrier magnetic tunnel junctions (HB-MTJs) with identical stack structure and cell geometry, but employing different spin-orbit torque (SOT) switching schemes. We cond… ▽ More Stochastic p-Bit devices play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms such as the simulated annealing. In this work, we focus on Stochastic p-Bits based on high-barrier magnetic tunnel junctions (HB-MTJs) with identical stack structure and cell geometry, but employing different spin-orbit torque (SOT) switching schemes. We conducted a comparative study of their switching probability as a function of pulse amplitude and width of the applied voltage. Through experimental and theoretical investigations, we have observed that the Y-type SOT-MTJs exhibit the gentlest dependence of the switching probability on the external voltage. This characteristic indicates superior tunability in randomness and enhanced robustness against external disturbances when Y-type SOT-MTJs are employed as stochastic p-Bits. Furthermore, the random numbers generated by these Y-type SOT-MTJs, following XOR pretreatment, have successfully passed the National Institute of Standards and Technology (NIST) SP800-22 test. This comprehensive study demonstrates the high performance and immense potential of Y-type SOT-MTJs for the implementation of stochastic p-Bits. △ Less

Submitted 5 June, 2023; originally announced June 2023.

Competing Uniaxial Anisotropies in Epitaxial Fe Thin Films Grown on InAs(001)

Authors: James M. Etheridge, Joseph Dill, Connor P. Dempsey, Mihir Pendharkar, Javier Garcia-Barriocanal, Guichuan Yu, Vlad S. Pribiag, Paul A. Crowell, Chris J. Palmstrøm

Abstract: We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane… ▽ More We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane lattice constants of the Fe films, confirming the correlation between the onset of film relaxation and the corresponding shear strain inferred from ferromagnetic resonance data. These results are relevant for ongoing efforts to develop spintronic and quantum devices utilizing large spin-orbit coupling in III-V semiconductors. △ Less

Submitted 23 May, 2023; originally announced May 2023.

Comments: 5 figures

Inverse orbital Hall effect and orbitronic terahertz emission observed in the materials with weak spin-orbit coupling

Authors: ** Wang, Zheng Feng, Yuhe Yang, Delin Zhang, Quancheng Liu, Zedong Xu, Zhiyan Jia, Yong Wu, Guoqiang Yu, Xiaoguang Xu, Yong Jiang

Abstract: The Orbital Hall effect, which originates from materials with weak spin-orbit coupling, has attracted considerable interest for spin-orbitronic applications. Here, we demonstrate the inverse effect of the orbital Hall effect and observe orbitronic terahertz emission in the Ti and Mn materials. Through spin-orbit transition in the ferromagnetic layer, the generated orbital current can be converted… ▽ More The Orbital Hall effect, which originates from materials with weak spin-orbit coupling, has attracted considerable interest for spin-orbitronic applications. Here, we demonstrate the inverse effect of the orbital Hall effect and observe orbitronic terahertz emission in the Ti and Mn materials. Through spin-orbit transition in the ferromagnetic layer, the generated orbital current can be converted to charge current in the Ti and Mn layers via the inverse orbital Hall effect. Furthermore, the inserted W layer provides an additional conversion of the orbital-charge current in the Ti and Mn layers, significantly enhancing the orbitronic terahertz emission. Moreover, the orbitronic terahertz emission can be manipulated by cooperating with the inverse orbital Hall effect and the inverse spin Hall effect in the different sample configurations. Our results not only discover the physical mechanism of condensed matter physics but also pave the way for designing promising spin-orbitronic devices and terahertz emitters. △ Less

Submitted 9 May, 2023; originally announced May 2023.

Comments: 15 pages, 4 figures, accepted for publication in npj Quantum Materials

Journal ref: npj Quantum Materials 8, 28 (2023)

Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal

Authors: Delin Zhang, Wei Jiang, Hwanhui Yun, Onri Jay Benally, Thomas Peterson, Zach Cresswell, Yihong Fan, Yang Lv, Guichuan Yu, Javier Garcia Barriocanal, Przemyslaw Swatek, K. Andre Mkhoyan, Tony Low, Jian-** Wang

Abstract: Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states and topological surface states with intriguing transport properties for spintronics. Here, we fabricate highly-ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputtering technology. Systematic angular dependence (… ▽ More Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states and topological surface states with intriguing transport properties for spintronics. Here, we fabricate highly-ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputtering technology. Systematic angular dependence (both in-plane and out-of-plane) study of magnetoresistance presents surprisingly robust quadratic and linear negative longitudinal magnetoresistance features for Pt3Sn and Pt3SnxFe1-x, respectively. We attribute the anomalous negative longitudinal magnetoresistance to the type-II Dirac semimetal phase (pristine Pt3Sn) and/or the formation of tunable Weyl semimetal phases through symmetry breaking processes, such as magnetic-atom do**, as confirmed by first-principles calculations. Furthermore, Pt3Sn and Pt3SnxFe1-x show the promising performance for facilitating the development of advanced spin-orbit torque devices. These results extend our understanding of chiral anomaly of topological semimetals and can pave the way for exploring novel topological materials for spintronic devices. △ Less

Submitted 9 May, 2023; originally announced May 2023.

Comments: 13 pages, 4 figures

Journal ref: Nature Communications volume 14, Article number: 4151 (2023)

Observation of Fluctuation Spin Hall Effect in Antiferromagnet

Authors: Chi Fang, Caihua Wan, Xiaoyue Zhang, Satoshi Okamoto, Tianyi Ma, Jianying Qin, Xiao Wang, Chenyang Guo, **g Dong, Guoqiang Yu, Zhenchao Wen, Ning Tang, Stuart S. P. Parkin, Naoto Nagaosa, Yuan Lu, Xiufeng Han

Abstract: The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase-transition is proved as an e… ▽ More The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase-transition is proved as an effective mechanism to create an additional part of SHE, named as fluctuation spin Hall effect (FSHE). This FSHE enhances the SHA due to the AFM spin fluctuation between conduction electrons and local spins. We detect the FSHE with the inverse and direct spin Hall effect (ISHE and DSHE) set-up and their temperature (T) dependences in the Cr/MgO/Fe magnetic tunnel junctions (MTJs). The SHA is significantly enhanced when temperature is approached to the Néel temperature (T_N) and has a peak value of -0.34 at 200 K near T_N. This value is higher than the room-temperature value by 240% and comparable to that of heavy metals Ta and W. Furthermore, the spin Hall resistivity of Cr well fits the modeled T-dependence when T approaches T_N from low temperatures, implying the AFM spin fluctuation nature of strong SHA enhancement. Thus, this study demonstrates the critical spin fluctuation as a prospective way of increasing SHA and enriches the AFM material candidates for spin-orbitronic devices. △ Less

Submitted 26 April, 2023; originally announced April 2023.

Comments: 27 pages, 9 figures

Bilayer Stacking Ferrovalley without Breaking Time-Reversal Symmetry

Authors: Guoliang Yu, Junyi Ji, Changsong Xu, H. J. Xiang

Abstract: Non-volatile manipulation of valley polarization in solids has long been desired for valleytronics applications but remains challenging. Here, we propose a novel strategy for non-volatile manipulating valleys through bilayer stacking, which enables spontaneous valley polarization without breaking time-reversal symmetry. We call this noval physics as bilayer stacking ferrovalley (BSFV). The group t… ▽ More Non-volatile manipulation of valley polarization in solids has long been desired for valleytronics applications but remains challenging. Here, we propose a novel strategy for non-volatile manipulating valleys through bilayer stacking, which enables spontaneous valley polarization without breaking time-reversal symmetry. We call this noval physics as bilayer stacking ferrovalley (BSFV). The group theory analysis reveals that the two-dimensional (2D) valley materials with hexagonal and square lattices can host BSFV. By searching the 2D material database, we discovered 14 monolayer 2D materials with direct gaps that are candidates for realizing BSFV. Further first-principles calculations demonstrate that BSFV exists in RhCl3 and InI bilayers. The bilayer stacking breaks their three- and four-fold rotation symmetry, resulting in 39 and 326 meV valley polarization, respectively. More interestingly, the valley polarization in our systems can be switched by interlayer sliding. Our study opens up a new direction for designing ferrovalley materials and thus greatly enriches the platform for the research of valleytronics. △ Less

Submitted 24 April, 2023; originally announced April 2023.

Comments: 13 pages, 3 figures

Unconventional Ferroelectricity in Violation with Neumann's Principle

Authors: Junyi Ji, Guoliang Yu, Changsong Xu, H. J. Xiang

Abstract: The physical properties of crystals are governed by their symmetry according to Neumann's principle. However, we present a case that contradicts this principle wherein the polarization is not invariant under its symmetry. We term this phenomenon as unconventional ferroelectricity in violation of Neumann's principle (UFVNP). Our group theory analysis reveals that 33 symmorphic space groups have the… ▽ More The physical properties of crystals are governed by their symmetry according to Neumann's principle. However, we present a case that contradicts this principle wherein the polarization is not invariant under its symmetry. We term this phenomenon as unconventional ferroelectricity in violation of Neumann's principle (UFVNP). Our group theory analysis reveals that 33 symmorphic space groups have the potential for UFVNP, with 26 of these symmorphic space groups belonging to non-polar groups. Notably, the polarization component in UFVNP materials is quantized. Our theory can explain the experimentally proven in-plane polarization of the monolayer α-In2Se3, which has C3v symmetry. Additionally, we employ first-principles calculations to demonstrate the existence of UFVNP in Td phase AgBr, which was not initially anticipated to exhibit polarization. Thus, UFVNP plays an integral role in characterizing and exploring the possible applications of ferroelectrics, significantly expanding the range of available materials for study. △ Less

Submitted 24 April, 2023; originally announced April 2023.

Comments: 14 pages, 3 figures, 1 tables

Observation of spin-wave moiré edge and cavity modes in twisted magnetic lattices

Authors: Hanchen Wang, Marco Madami, Jilei Chen, Hao Jia, Yu Zhang, Rundong Yuan, Yizhan Wang, Wenqing He, Lutong Sheng, Yuelin Zhang, **long Wang, Song Liu, Ka Shen, Guoqiang Yu, Xiufeng Han, Dapeng Yu, Jean-Philippe Ansermet, Gianluca Gubbiotti, Haiming Yu

Abstract: We report the experimental observation of the spin-wave moiré edge and cavity modes using Brillouin light scattering spectro-microscopy in a nanostructured magnetic moiré lattice consisting of two twisted triangle antidot lattices based on an yttrium iron garnet thin film. Spin-wave moiré edge modes are detected at an optimal twist angle and with a selective excitation frequency. At a given twist… ▽ More We report the experimental observation of the spin-wave moiré edge and cavity modes using Brillouin light scattering spectro-microscopy in a nanostructured magnetic moiré lattice consisting of two twisted triangle antidot lattices based on an yttrium iron garnet thin film. Spin-wave moiré edge modes are detected at an optimal twist angle and with a selective excitation frequency. At a given twist angle, the magnetic field acts as an additional degree of freedom for tuning the chiral behavior of the magnon edge modes. Micromagnetic simulations indicate that the edge modes emerge within the original magnonic band gap and at the intersection between a mini-flatband and a propagation magnon branch. Our theoretical estimate for the Berry curvature of the magnon-magnon coupling suggests a non-trivial topology for the chiral edge modes and confirms the key role played by the dipolar interaction. Our findings shed light on the topological nature of the magnon edge mode for emergent moiré magnonics. △ Less

Submitted 3 April, 2023; originally announced April 2023.

Unconventional Superconducting Quantum Criticality in Monolayer WTe2

Authors: Tiancheng Song, Yanyu Jia, Guo Yu, Yue Tang, Pengjie Wang, Ratnadwip Singha, Xin Gui, Ayelet J. Uzan, Michael Onyszczak, Kenji Watanabe, Takashi Taniguchi, Robert J. Cava, Leslie M. Schoop, N. P. Ong, Sanfeng Wu

Abstract: The superconductor to insulator or metal transition in two dimensions (2D) provides a valuable platform for studying continuous quantum phase transitions (QPTs) and critical phenomena. Distinct theoretical models, including both fermionic and bosonic localization scenarios, have been developed, but many questions remain unsettled despite decades of research. Extending Nernst experiments down to mi… ▽ More The superconductor to insulator or metal transition in two dimensions (2D) provides a valuable platform for studying continuous quantum phase transitions (QPTs) and critical phenomena. Distinct theoretical models, including both fermionic and bosonic localization scenarios, have been developed, but many questions remain unsettled despite decades of research. Extending Nernst experiments down to millikelvin temperatures, we uncover anomalous quantum fluctuations and identify an unconventional superconducting quantum critical point (QCP) in a gate-tuned excitonic quantum spin Hall insulator (QSHI), the monolayer tungsten ditelluride (WTe2). The observed vortex Nernst effect reveals singular superconducting fluctuations in the resistive normal state induced by magnetic fields or temperature, even well above the transition. Near the do**-induced QCP, the Nernst signal driven by quantum fluctuations is exceptionally large in the millikelvin regime, with a coefficient of ~ 4,100 uV/KT at zero magnetic field, an indication of the proliferation of vortices. Surprisingly, the Nernst signal abruptly disappears when the do** falls below the critical value, in striking conflict with conventional expectations. This series of phenomena, which have no prior analogue, call for careful examinations of the mechanism of the QCP, including the possibility of a continuous QPT between two distinct ordered phases in the monolayer. Our experiments open a new avenue for studying unconventional QPTs and quantum critical matter. △ Less

Submitted 1 June, 2023; v1 submitted 11 March, 2023; originally announced March 2023.

Voltage-Controlled Magnon Transistor via Tunning Interfacial Exchange Coupling

Authors: Yizhan Wang, Tianyi Zhang, **g Dong, Peng Chen, Caihua Wan, Guoqiang Yu, Xiufeng Han

Abstract: Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of magnons (the key carriers of spin-angular momenta in the magnonics). However, also due to their electric neutrality, magnons have no access to directly interact wit… ▽ More Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of magnons (the key carriers of spin-angular momenta in the magnonics). However, also due to their electric neutrality, magnons have no access to directly interact with an electric field and it is thus difficult to manipulate magnon transport by voltages straightforwardly. Here, we demonstrated a gate voltage ($V_{\rm g}$) applied on a nonmagnetic metal/magnetic insulator (NM/MI) interface that bended the energy band of the MI and then modulated the possibility for conduction electrons in the NM to tunnel into the MI can consequently enhance or weaken the spin-magnon conversion efficiency at the interface. A voltage-controlled magnon transistor based on the magnon-mediated electric current drag (MECD) effect in a Pt/Y$_{\rm 3}$Fe$_{\rm 5}$O$_{\rm 12}$ (YIG)/Pt sandwich was then experimentally realized with $V_{\rm g}$ modulating the magnitude of the MECD signal. The obtained efficiency (the change ratio between the MECD voltage at $\pm V_{\rm g}$) reached 10%/(MV/cm) at 300 K. This prototype of magnon transistor offers an effective scheme to control magnon transport by a gate voltage. △ Less

Submitted 13 January, 2023; originally announced January 2023.

Comments: 12 pages, 4 figures

Ferroelectrically switchable magnetic multistates in MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and MnSb$_2$Te$_4$(Sb$_2$Te$_3$)$_n$ (n = 0, 1) thin films

Authors: Guoliang Yu, Chuhan Tang, Zhiqiang Tian, Ziming Zhu, Anlian Pan, Mingxing Chen, Xing-Qiu Chen

Abstract: Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and their Sb counterparts exhibit A-type antiferromagnetism with intriguing topological properties. Here, we propose to obtain tunable magnetic multistates in their thin films by ferroelectrically… ▽ More Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and their Sb counterparts exhibit A-type antiferromagnetism with intriguing topological properties. Here, we propose to obtain tunable magnetic multistates in their thin films by ferroelectrically manipulating the interlayer magnetic couplings (IMCs) based on the Heisenberg model and first-principles calculations. Our strategy relies on that interfacing the thin films with appropriate ferroelectric materials can switch on/off an interlayer hop** channel between Mn-$e_g$ orbitals as the polarizations reversed, thus resulting in a switchable interlayer antiferromagnetism-to-ferromagnetism transition. On the other hand, the interface effect leads to asymmetric energy barrier heights for the two polarization states. These properties allow us to build ferroelectrically switchable triple and quadruple magnetic states with multiple Chern numbers in thin films. Our study reveals that ferroelectrically switchable magnetic and topological multistates in MnBi$_2$Te$_4$ family can be obtained by rational design for multifunctional electronic devices, which can also be applied to other two-dimensional magnetic materials. △ Less

Submitted 27 September, 2023; v1 submitted 1 January, 2023; originally announced January 2023.

Comments: 8.2 pages and 3 figures

Journal ref: Phys. Rev. B 108, 014106 (2023)

Fabrication and Characterization of Magnetic-Field-Resilient MoRe Superconducting Coplanar Waveguide Resonators

Authors: Chang Geun Yu, Bongkeon Kim, Yong-Joo Doh

Abstract: Magnetic-field-resilient superconducting coplanar waveguide (SCPW) resonators are essential for develo** integrated quantum circuits of various qubits and quantum memory devices. Molybdenum-Rhenium (MoRe), which is a disordered superconducting alloy forming a highly transparent contact to the graphene and carbon nanotubes (CNTs), would be a promising platform for realizing the field-resilient SC… ▽ More Magnetic-field-resilient superconducting coplanar waveguide (SCPW) resonators are essential for develo** integrated quantum circuits of various qubits and quantum memory devices. Molybdenum-Rhenium (MoRe), which is a disordered superconducting alloy forming a highly transparent contact to the graphene and carbon nanotubes (CNTs), would be a promising platform for realizing the field-resilient SCPW resonators combined with graphene- and CNT-based nano-hybrid qubits. We fabricated MoRe SCPW resonators and investigated their microwave transmission characteristics with varying temperature and external magnetic field. Our observations show that the thickness of MoRe film is a critical parameter determining the lower critical field, kinetic inductance, and characteristic impedance of the SCPW resonator, resulting in drastic changes in the quality factor and the resonance frequency. As a result, we obtained a maximum value of $Q_{i} > 10^{4}$ in parallel magnetic fields up to $B_{||} = 0.15$ T for the 27-nm-thick MoRe resonator. Our experimental results suggest that MoRe SCPW resonator would be useful for integrating nano-hybrid spin or gatemon qubits and for develo** spin-ensemble quantum memory devices. △ Less

Submitted 30 November, 2022; originally announced November 2022.

Comments: 19 pages, 5 figures

Anomalous anisotropy of spin current in a cubic spin source with noncollinear antiferromagnetism

Authors: Cuimei Cao, Shiwei Chen, Rui-Chun Xiao, Zengtai Zhu, Guoqiang Yu, Yang** Wang, Xuepeng Qiu, Liang Liu, Tieyang Zhao, Ding-Fu Shao, Yang Xu, **gsheng Chen, Qingfeng Zhan

Abstract: Cubic materials host high crystal symmetry and hence are not expected to support anisotropy in transport phenomena. In contrast to this common expectation, here we report an anomalous anisotropy of spin current can emerge in the (001) film of Mn${_3}$Pt, a noncollinear antiferromagnetic spin source with face-centered cubic structure. Such spin current anisotropy originates from the intertwined tim… ▽ More Cubic materials host high crystal symmetry and hence are not expected to support anisotropy in transport phenomena. In contrast to this common expectation, here we report an anomalous anisotropy of spin current can emerge in the (001) film of Mn${_3}$Pt, a noncollinear antiferromagnetic spin source with face-centered cubic structure. Such spin current anisotropy originates from the intertwined time reversal-odd ($T$-odd) and time reversal-even ($T$-even) spin Hall effects. Based on symmetry analyses and experimental characterizations of the current-induced spin torques in Mn${_3}$Pt-based heterostructures, we find that the spin current generated by Mn${_3}$Pt (001) exhibits exotic dependences on the current direction for all the spin components, deviating from that in conventional cubic systems. We also demonstrate that such an anisotropic spin current can be used to realize low-power spintronic applications such as the efficient field-free switching of the perpendicular magnetizations. △ Less

Submitted 9 November, 2022; originally announced November 2022.

Comments: 17 pages, 4 figures

Cryogenic in-memory computing using tunable chiral edge states

Authors: Yuting Liu, Albert Lee, Kun Qian, Peng Zhang, Haoran He, Zheyu Ren, Shun Kong Cheung, Yaoyin Li, Xu Zhang, Zichao Ma, Zhihua Xiao, Guoqiang Yu, Xin Wang, Junwei Liu, Zhongrui Wang, Kang L. Wang, Qiming Shao

Abstract: Energy-efficient hardware implementation of machine learning algorithms for quantum computation requires nonvolatile and electrically-programmable devices, memristors, working at cryogenic temperatures that enable in-memory computing. Magnetic topological insulators are promising candidates due to their tunable magnetic order by electrical currents with high energy efficiency. Here, we utilize mag… ▽ More Energy-efficient hardware implementation of machine learning algorithms for quantum computation requires nonvolatile and electrically-programmable devices, memristors, working at cryogenic temperatures that enable in-memory computing. Magnetic topological insulators are promising candidates due to their tunable magnetic order by electrical currents with high energy efficiency. Here, we utilize magnetic topological insulators as memristors (termed magnetic topological memristors) and introduce a chiral edge state-based cryogenic in-memory computing scheme. On the one hand, the chiral edge state can be tuned from left-handed to right-handed chirality through spin-momentum locked topological surface current injection. On the other hand, the chiral edge state exhibits giant and bipolar anomalous Hall resistance, which facilitates the electrical readout. The memristive switching and reading of the chiral edge state exhibit high energy efficiency, high stability, and low stochasticity. We achieve high accuracy in a proof-of-concept classification task using four magnetic topological memristors. Furthermore, our algorithm-level and circuit-level simulations of large-scale neural networks based on magnetic topological memristors demonstrate a software-level accuracy and lower energy consumption for image recognition and quantum state preparation compared with existing memristor technologies. Our results may inspire further topological quantum physics-based novel computing schemes. △ Less

Submitted 19 September, 2022; originally announced September 2022.

Comments: 33 pages, 12 figures

Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-based Spin-Orbit Torque Devices

Authors: Puyang Huang, Xinqi Liu, Yue Xin, Yu Gu, Albert Lee, Zhuo Xu, Peng Chen, Yu Zhang, Weijie Deng, Guoqiang Yu, Zhongkai Liu, Qi Yao, Yumeng Yang, Zhifeng Zhu, Xufeng Kou

Abstract: Non-volatile memristors offer a salient platform for artificial neural network (ANN), but the integration of different function blocks into one hardware system remains challenging. Here we demonstrate the implementation of brain-like synaptic (SOT-S) and neuronal (SOT-N) functions in the Bi2Te3/CrTe2 heterostructure-based spin-orbit torque (SOT) device. The SOT-S unit exhibits highly linear (linea… ▽ More Non-volatile memristors offer a salient platform for artificial neural network (ANN), but the integration of different function blocks into one hardware system remains challenging. Here we demonstrate the implementation of brain-like synaptic (SOT-S) and neuronal (SOT-N) functions in the Bi2Te3/CrTe2 heterostructure-based spin-orbit torque (SOT) device. The SOT-S unit exhibits highly linear (linearity error < 4.19%) and symmetrical long-term potentiation/depression process, resulting in better performance compared to other memristor synapses. Meanwhile, the Sigmoid-shape transition curve inherited in the SOT-N cell replaces the software-based activation function block, hence reducing the system complexity. On this basis, we employ a serial-connected, voltage-mode sensing ANN architecture to enhance the vector-matrix multiplication signal strength with low reading error of 0.61%. Furthermore, the trainable activation function of SOT-N enables the integrated SOT-ANN to execute the Batch Normalization algorithm and activation operation within one clock cycle, which bring about improved on/off-chip training performance close to the ideal baseline. △ Less

Submitted 18 May, 2023; v1 submitted 13 September, 2022; originally announced September 2022.

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 hetero-junction: A first-principles study

Authors: Viacheslav Sorkin, Hangbo Zhou, Zhi Gen Yu, Kah-Wee Ang, Yong-Wei Zhang

Abstract: Using DFT calculations, we investigate the effects of the type, location, and density of point defects in monolayer MoS2 on electronic structures and Schottky barrier heights (SBH) of Au/MoS2 heterojunction. Three types of point defects in monolayer MoS2, that is, S monovacancy, S divacancy and MoS (Mo substitution at S site) antisite defects, are considered. The following findings are revealed: (… ▽ More Using DFT calculations, we investigate the effects of the type, location, and density of point defects in monolayer MoS2 on electronic structures and Schottky barrier heights (SBH) of Au/MoS2 heterojunction. Three types of point defects in monolayer MoS2, that is, S monovacancy, S divacancy and MoS (Mo substitution at S site) antisite defects, are considered. The following findings are revealed: (1) The SBH for the monolayer MoS2 with defects is universally higher than that for its defect-free counterpart. (2) S divacancy and MoS antisite defects increase the SBH to a larger extent than S monovacancy. (3) A defect located in the inner sublayer of MoS2, which is adjacent to Au substrate, increases the SBH to a larger extent than that in the outer sublayer of MoS2. (4) An increase in defect density increases the SBH. These findings indicate a large variation of SBH with the defect type, location, and concentration. We also compare our results with previously experimentally measured SBH for Au/MoS2 contact and postulate possible reasons for the large differences among existing experimental measurements and between experimental measurements and theoretical predictions. The findings and insights revealed here may provide practice guidelines for modulation and optimization of SBH in Au/MoS2 and similar heterojunctions via defect engineering. △ Less

Submitted 2 August, 2022; originally announced August 2022.

Comments: 20 pages, 8 figures

Wafer-scale epitaxial growth of the thickness-controllable van der Waals ferromagnet CrTe2 for reliable magnetic memory applications

Authors: Xinqi Liu, Yunyouyou Xia, Lei Gao, Puyang Huang, Liyang Liao, Baoshan Cui, Dirk Backes, Gerrit van der Laan, Thorsten Hesjedal, Yuchen Ji, Peng Chen, Fan Wu, Meixiao Wang, Junwei Zhang, Guoqiang Yu, Cheng Song, Yulin Chen, Zhongkai Liu, Yumeng Yang, Yong Peng, Gang Li, Qi Yao, Xufeng Kou

Abstract: To harness the intriguing properties of two-dimensional van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, we demonstrate the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates. Benefiting from the uniform surface energy of the dangling bond-free Al2… ▽ More To harness the intriguing properties of two-dimensional van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, we demonstrate the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates. Benefiting from the uniform surface energy of the dangling bond-free Al2O3(0001) surface, the layer-by-layer vdW growth mode is observed right from the initial growth stage, which warrants precise control of the sample thickness and atomically smooth surface morphology across the entire wafer. Moreover, the presence of the Coulomb interaction at the CrTe2/Al2O3 interface serves as an effective tuning parameter to tailor the anomalous Hall response, and the structural optimization of the CrTe2-based spin-orbit torque device leads to a substantial switching power reduction by 54%. Our results may lay out a general framework for the design of energy-efficient spintronics based on configurable vdW FMs. △ Less

Submitted 12 July, 2022; originally announced July 2022.

Comments: 20 pages, 4 figures

Electrochemically-driven insulator-metal transition in ionic-liquid-gated antiferromagnetic Mott-insulating NiS$_2$ single crystals

Authors: Sajna Hameed, Bryan Voigt, John Dewey, William Moore, Damjan Pelc, Bhaskar Das, Sami El-Khatib, Javier Garcia-Barriocanal, Bing Luo, Nick Seaton, Guichuan Yu, Chris Leighton, Martin Greven

Abstract: Motivated by the existence of superconductivity in pyrite-structure CuS$_2$, we explore the possibility of ionic-liquid-gating-induced superconductivity in the proximal antiferromagnetic Mott insulator NiS$_2$. A clear gating-induced transition from a two-dimensional insulating state to a three-dimensional metallic state is observed at positive gate bias on single crystal surfaces. No evidence for… ▽ More Motivated by the existence of superconductivity in pyrite-structure CuS$_2$, we explore the possibility of ionic-liquid-gating-induced superconductivity in the proximal antiferromagnetic Mott insulator NiS$_2$. A clear gating-induced transition from a two-dimensional insulating state to a three-dimensional metallic state is observed at positive gate bias on single crystal surfaces. No evidence for superconductivity is observed down to the lowest measured temperature of 0.45 K, however. Based on transport, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and other techniques, we deduce an electrochemical gating mechanism involving a substantial decrease in the S:Ni ratio (over hundreds of nm), which is both non-volatile and irreversible. This is in striking contrast to the reversible, volatile, surface-limited, electrostatic gate effect in pyrite FeS$_2$. We attribute this stark difference in electrochemical vs. electrostatic gating response in NiS$_2$ and FeS$_2$ to the much larger S diffusion coefficient in NiS$_2$, analogous to the different behaviors observed among electrolyte-gated oxides with differing O-vacancy diffusivities. The gating irreversibility, on the other hand, is associated with the lack of atmospheric S; this is in contrast to the better understood oxide case, where electrolysis of atmospheric H$_2$O provides an O reservoir. This study of NiS$_2$ thus provides new insight into electrolyte gating mechanisms in functional materials, in a previously unexplored limit. △ Less

Submitted 2 January, 2022; originally announced January 2022.

Comments: 4 figures, included supplement

Tailoring Magnetic Exchange Interactions in Ferromagnet-Intercalated MnBi2Te4 Superlattices

Authors: Peng Chen, Qi Yao, Qiang Sun, Alexander J. Grutter, P. Quarterman, Purnima P. Balakrishnan, Christy J. Kinane, Andrew J. Caruana, Sean Langridge, Baoshan Cui, Lun Li, Yuchen Ji, Yong Zhang, Zhongkai Liu, ** Zou, Guoqiang Yu, Yumeng Yang, Xufeng Kou

Abstract: The intrinsic magnetic topological insulator MnBi2Te4 (MBT) has provided a platform for the successful realization of exotic quantum phenomena. To broaden the horizons of MBT-based material systems, we intercalate ferromagnetic MnTe layers to construct the [(MBT)(MnTe)m]N superlattices by molecular beam epitaxy. The effective incorporation of ferromagnetic spacers mediates the anti-ferromagnetic i… ▽ More The intrinsic magnetic topological insulator MnBi2Te4 (MBT) has provided a platform for the successful realization of exotic quantum phenomena. To broaden the horizons of MBT-based material systems, we intercalate ferromagnetic MnTe layers to construct the [(MBT)(MnTe)m]N superlattices by molecular beam epitaxy. The effective incorporation of ferromagnetic spacers mediates the anti-ferromagnetic interlayer coupling among the MBT layers through the exchange spring effect at the MBT/MnTe hetero-interfaces. Moreover, the precise control of the MnTe thickness enables the modulation of relative strengths among the constituent magnetic orders, leading to tunable magnetoelectric responses, while the superlattice periodicity serves as an additional tuning parameter to tailor the spin configurations of the synthesized multi-layers. Our results demonstrate the advantages of superlattice engineering for optimizing the magnetic interactions in MBT-family systems, and the ferromagnet-intercalated strategy opens up new avenues in magnetic topological insulator structural design and spintronic applications. △ Less

Submitted 8 December, 2021; originally announced December 2021.

Comments: 20 pages, 5 figures

Interface engineering of ferroelectricity in thin films of thiophosphate ABP 2 X 6 (A = Cu, Ag; B = In, Bi, Cr, V; and X = S, Se)

Authors: Guoliang Yu, Anlian Pan, Mingxing Chen

Abstract: Two-dimensional ferroelectrics (FEs) are promising in the miniaturization of memory devices with ultra-high-density data storage and low power consumption. However, many thiophosphate monolayers, i.e., analogs of CuInP$_2$S$_6$ and referred to as ABP$_2$X$_6$, lose ferroelectricity and instead exhibit an antiferroelectric (AFE) or paraelectric ordering. We propose to tune the AFE ABP$_2$X$_6$ mono… ▽ More Two-dimensional ferroelectrics (FEs) are promising in the miniaturization of memory devices with ultra-high-density data storage and low power consumption. However, many thiophosphate monolayers, i.e., analogs of CuInP$_2$S$_6$ and referred to as ABP$_2$X$_6$, lose ferroelectricity and instead exhibit an antiferroelectric (AFE) or paraelectric ordering. We propose to tune the AFE ABP$_2$X$_6$ monolayers into the FE ordering through interface engineering. The mechanism is that there are couplings between the charge polarizations of the ABP$_2$X$_6$ monolayers and the local dipoles as well as the induced electronic polarizations in the substrate which have a tendency to stabilize the FE ordering. We further perform first-principles calculations for CuInP$_2$Se$_6$ and CuCrP$_2$S$_6$ monolayers and their van der Waals heterostructures. We find that an AFE CuInP$_2$Se$_6$ monolayer becomes FE as interfaced with graphene, MoS$_2$, and h-BN monolayers. In contrast, the CuCrP$_2$S$_6$ monolayer remains AFE since there is a large energy difference between the AFE and FE phases. Interfacing it with a MoTe$_2$ monolayer induces a metal-insulator transition for the heterostructure, whereas interfacing with a polar surface MgO(111) can drive it into FE. The interfacing effect can also be used to manipulate the FE properties of ABP$_2$X$_6$ multilayers. We further find that the AFE-to-FE transition is electrically switchable in these systems. In particular, it is accompanied by an indirect-direct band-gap transition for the CuInP$_2$Se$_6$ monolayer. Our study offers an effective approach to tune the FE and electronic properties of ABP$_2$X$_6$ thin films for applications in electronics and optoelectronics. △ Less

Submitted 7 December, 2021; originally announced December 2021.

Comments: 10 pages, 16 figures

Journal ref: Phys. Rev. B 104, 224102 (2021)

Giant and robust topological Hall effect in Chiral Magnet Co7Zn8Mn5

Authors: Hai Zeng, Xuanwei Zhao, Guang Yu, Xiaohua Luo, Shengcan Ma, Changcai Chen, Zhaojun Mo, Yugang Zhang, Yisheng Chai, Jun Shen, Zhenchen Zhong

Abstract: Recently, \b{eta}-Mn-type Co-Zn-Mn alloys have gained particular attentions as a new class of chiral magnets hosting skyrmion phase. In this work, a giant topological Hall effect(THE)is observed during the wide temperature range below 220 K in the chiral magnet Co7Zn8Mn5. The maximum topological Hall resistivity, -2.1 μΩ cm, is obtained at 10 K. Moreover, the observed THE effect persists up to Tc,… ▽ More Recently, \b{eta}-Mn-type Co-Zn-Mn alloys have gained particular attentions as a new class of chiral magnets hosting skyrmion phase. In this work, a giant topological Hall effect(THE)is observed during the wide temperature range below 220 K in the chiral magnet Co7Zn8Mn5. The maximum topological Hall resistivity, -2.1 μΩ cm, is obtained at 10 K. Moreover, the observed THE effect persists up to Tc, which is mainly derived from the noncoplanar spin structure with scalar spin chirality. In contrast, the formation of skyrmion phase is substantiated at the temperature interval slightly below Tc by adopting the magnetization and ac-susceptibility. Further, the possible signal of skyrmion-conical coexisting phase is found based on the out-of-phase component in magnetoelastic measurements. These results strongly suggest the chiral magnet Co7Zn8Mn5 compound should be an excellent candidate to study the topological magnetic properties and high temperature skyrmions. △ Less

Submitted 29 October, 2021; originally announced October 2021.

Higher-order Oscillatory Planar Hall Effect in Topological Kagome Metal

Authors: Leyi Li, Enkui Yi, Bin Wang, Guoqiang Yu, Bing Shen, Zhongbo Yan, Meng Wang

Abstract: Exploration of exotic transport behavior for quantum materials is of great interest and importance for revealing exotic orders to bring new physics. In this Letter, we report the observation of exotic prominent planar Hall effect (PHE) and planar anisotropic magnetoresistivity (PAMR) in strange kagome metal KV$_3$Sb$_5$. The PHE and PAMR, which are driven by an in-plane magnetic field and display… ▽ More Exploration of exotic transport behavior for quantum materials is of great interest and importance for revealing exotic orders to bring new physics. In this Letter, we report the observation of exotic prominent planar Hall effect (PHE) and planar anisotropic magnetoresistivity (PAMR) in strange kagome metal KV$_3$Sb$_5$. The PHE and PAMR, which are driven by an in-plane magnetic field and display sharp difference from other Hall effects driven by an out-of-plane magnetic field or magnetization, exhibit exotic higher-order oscillations in sharp contrast to those following empirical rule only allowing twofold symmetrical oscillations. These higher-order oscillations exhibit strong field and temperature dependence and vanish around charge density wave (CDW) transition. The unique transport properties suggest a significant interplay of the lattice, magnetic and electronic structure in KV$_3$Sb$_5$. This interplay can couple the hidden anisotropy and transport electrons leading to the novel PHE and PAMR in contrast to other materials. △ Less

Submitted 23 January, 2023; v1 submitted 14 October, 2021; originally announced October 2021.

Journal ref: npj Quantum Mater. 8, 2 (2023)

Polarization-dependent selection rules and optical spectrum atlas of twisted bilayer graphene quantum dots

Authors: Yunhua Wang, Guodong Yu, Malte Rösner, Mikhail I. Katsnelson, Hai-Qing Lin, Shengjun Yuan

Abstract: Finding out how symmetry encodes optical polarization information into the selection rule in molecules and materials is important for their optoelectronic applications including spectroscopic analysis, display technology and quantum computation. Here, we extend the polarization-dependent selection rules from atoms to solid systems with point group descriptions via rotational operator for circular… ▽ More Finding out how symmetry encodes optical polarization information into the selection rule in molecules and materials is important for their optoelectronic applications including spectroscopic analysis, display technology and quantum computation. Here, we extend the polarization-dependent selection rules from atoms to solid systems with point group descriptions via rotational operator for circular polarization and $2$-fold rotational operator (or reflection operator) for linear polarization. As a variant of graphene quantum dot (GQD), twisted bilayer graphene quantum dot (TBGQD) certainly inherits GQD's advantages including ultrathin thickness, excellent biocompatibility and shape- and size-tunable optical absorption/emission. We then naturally ask how the electronic structures and optical properties of TBGQDs rely on size, shape, twist angle and correlation effects. We build plentiful types of TBGQDs with $10$ point groups and obtain the optical selection rule database for all types, where the current operator matrix elements identify the generalized polarization-dependent selection rules. Our results show that both of the electronic and optical band gaps follow power-law scalings and the twist angle has the dominant role in modifying the size scaling. We map an atlas of optical conductivity spectra for both size and twist angle in TBGQDs. As a result of quantum confinement effect of finite size, in the atlas a new type of optical conductivity peaks absent in twisted bilayer graphene bulk is predicted theoretically with multiple discrete absorption frequencies from infrared to ultraviolet light, enabling applications on photovoltaic devices and photodetectors. The atlas and size scaling provide a full structure/symmetry-function interrelation and hence offers an excellent geometrical manipulation of optical properties of TBGQD as a building block in integrated carbon optoelectronics. △ Less

Submitted 4 October, 2021; originally announced October 2021.

One-Dimensional Luttinger Liquids in a Two-Dimensional Moiré Lattice

Authors: Pengjie Wang, Guo Yu, Yves H. Kwan, Yanyu Jia, Shiming Lei, Sebastian Klemenz, F. Alexandre Cevallos, Ratnadwip Singha, Trithep Devakul, Kenji Watanabe, Takashi Taniguchi, Shivaji L. Sondhi, Robert J. Cava, Leslie M. Schoop, Siddharth A. Parameswaran, Sanfeng Wu

Abstract: The Luttinger liquid (LL) model of one-dimensional (1D) electronic systems provides a powerful tool for understanding strongly correlated physics including phenomena such as spin-charge separation. Substantial theoretical efforts have attempted to extend the LL phenomenology to two dimensions (2D), especially in models of closely packed arrays of 1D quantum wires, each being described as a LL. Suc… ▽ More The Luttinger liquid (LL) model of one-dimensional (1D) electronic systems provides a powerful tool for understanding strongly correlated physics including phenomena such as spin-charge separation. Substantial theoretical efforts have attempted to extend the LL phenomenology to two dimensions (2D), especially in models of closely packed arrays of 1D quantum wires, each being described as a LL. Such coupled-wire models have been successfully used to construct 2D anisotropic non-Fermi liquids, quantum Hall states, topological phases, and quantum spin liquids. However, an experimental demonstration of high-quality arrays of 1D LLs suitable for realizing these models remains absent. Here we report the experimental realization of 2D arrays of 1D LLs with crystalline quality in a moiré superlattice made of twisted bilayer tungsten ditelluride (tWTe$_{2}$). Originating from the anisotropic lattice of the monolayer, the moiré pattern of tWTe$_{2}$ hosts identical, parallel 1D electronic channels, separated by a fixed nanoscale distance, which is tunable by the interlayer twist angle. At a twist angle of ~ 5 degrees, we find that hole-doped tWTe$_{2}$ exhibits exceptionally large transport anisotropy with a resistance ratio of ~ 1000 between two orthogonal in-plane directions. The across-wire conductance exhibits power-law scaling behaviors, consistent with the formation of a 2D anisotropic phase that resembles an array of LLs. Our results open the door for realizing a variety of correlated and topological quantum phases based on coupled-wire models and LL physics. △ Less

Submitted 13 December, 2021; v1 submitted 9 September, 2021; originally announced September 2021.

Comments: 29 pages, 4 Main Figures + 13 Extended Data Figures

Journal ref: Nature 605, 57-62 (2022)

Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism

Authors: Zhengxian Li, Kui Huang, De** Guo, Guodong Ma, Xiaolei Liu, Yueshen Wu, Jian Yuan, Zicheng Tao, Binbin Wang, Xia Wang, Zhiqiang Zou, Na Yu, Geliang Yu, Jiamin Xue, Jun Li, Zhongkai Liu, Wei Ji, Yanfeng Guo

Abstract: The weak antilocalization (WAL) effect is known as a quantum correction to the classical conductivity, which never appeared in two-dimensional magnets. In this work, we reported the observation of a WAL effect in the van der Waals ferromagnet Fe5-xGeTe2 with a Curie temperature Tc ~ 270 K, which can even reach as high as ~ 120 K. The WAL effect could be well described by the Hikami-Larkin-Nagaoka… ▽ More The weak antilocalization (WAL) effect is known as a quantum correction to the classical conductivity, which never appeared in two-dimensional magnets. In this work, we reported the observation of a WAL effect in the van der Waals ferromagnet Fe5-xGeTe2 with a Curie temperature Tc ~ 270 K, which can even reach as high as ~ 120 K. The WAL effect could be well described by the Hikami-Larkin-Nagaoka and Maekawa-Fukuyama theories in the presence of strong spin-orbit coupling (SOC). Moreover, A crossover from a peak to dip behavior around 60 K in both the magnetoresistance and magnetoconductance was observed, which could be ascribed to a rare example of temperature driven Lifshitz transition as indicated by the angle-resolved photoemission spectroscopy measurements and first principles calculations. The reflective magnetic circular dichroism measurements indicate a possible spin reorientation that kills the WAL effect above 120 K. Our findings present a rare example of WAL effect in two-dimensional ferromagnet and also a magnetotransport fingerprint of the strong SOC in Fe5-xGeTe2. The results would be instructive for understanding the interaction Hamiltonian for such high Tc itinerant ferromagnetism as well as be helpful for the design of next-generation room temperature spintronic or twistronic devices. △ Less

Submitted 5 September, 2021; originally announced September 2021.

Comments: main text 32 pages + SI 7 pages;main text 8 figures + SI 5 figures and 3 tables

Room-Temperature Anisotropic Plasma Mirror and Polarization-Controlled Optical Switch Based on Type-II Weyl Semimetal WP2

Authors: Kaixuan Zhang, Yong** Du, Zeming Qi, Bin Cheng, Xiaodong Fan, Laiming Wei, Lin Li, Dongli Wang, Guolin Yu, Shuhong Hu, Changhong Sun, Zhiming Huang, Junhao Chu, Xiangang Wan, Changgan Zeng

Abstract: Anisotropy in electronic structures may ignite intriguing anisotropic optical responses, as has been well demonstrated in various systems including superconductors, semiconductors, and even topological Weyl semimetals. Meanwhile, it is well established in metal optics that the metal reflectance declines from one to zero when the photon frequency is above the plasma frequency ωp , behaving as a pla… ▽ More Anisotropy in electronic structures may ignite intriguing anisotropic optical responses, as has been well demonstrated in various systems including superconductors, semiconductors, and even topological Weyl semimetals. Meanwhile, it is well established in metal optics that the metal reflectance declines from one to zero when the photon frequency is above the plasma frequency ωp , behaving as a plasma mirror. However, the exploration of anisotropic plasma mirrors and corresponding applications remains elusive, especially at room temperature. Here, we discover a pronounced anisotropic plasma reflectance edge in the type-II Weyl semimetal WP2, with an anisotropy ratio of ωp up to 1.5. Such anisotropic plasma mirror behavior and its robustness against temperature promise optical device applications over a wide temperature range. For example, the high sensitivity of polarization-resolved plasma reflectance edge renders WP2 an inherent polarization detector. We further achieve a room-temperature WP2-based optical switch, effectively controlled by simply tuning the light polarization. These findings extend the frontiers of metal optics as a discipline and promise the design of multifunctional devices combining both topological and optical features. △ Less

Submitted 10 August, 2021; v1 submitted 7 August, 2021; originally announced August 2021.

Journal ref: Physical Review Applied 13, 014058 (2020)

Growth and characterization of large (Y,La)TiO$_3$ and (Y,Ca)TiO$_3$ single crystals

Authors: S. Hameed, J. Joe, L. R. Thoutam, J. Garcia-Barriocanal, B. Yu, G. Yu, S. Chi, T. Hong, T. J. Williams, J. W. Freeland, P. M. Gehring, Z. Xu, M. Matsuda, B. Jalan, M. Greven

Abstract: The Mott-insulating rare-earth titanates (RTiO$_3$, R being a rare-earth ion) are an important class of materials that encompasses interesting spin-orbital phases as well as ferromagnet-antiferromagnet and insulator-metal transitions. The growth of these materials has been plagued by difficulties related to overoxidation, which arises from a strong tendency of Ti$^{3+}$ to oxidize to Ti$^{4+}$. We… ▽ More The Mott-insulating rare-earth titanates (RTiO$_3$, R being a rare-earth ion) are an important class of materials that encompasses interesting spin-orbital phases as well as ferromagnet-antiferromagnet and insulator-metal transitions. The growth of these materials has been plagued by difficulties related to overoxidation, which arises from a strong tendency of Ti$^{3+}$ to oxidize to Ti$^{4+}$. We describe our efforts to grow sizable single crystals of YTiO$_3$ and its La-substituted and Ca-doped variants with the optical travelling-solvent floating-zone technique. We present sample characterization $via$ chemical composition analysis, magnetometry, charge transport, neutron scattering, x-ray absorption spectroscopy and x-ray magnetic circular dichroism to understand macroscopic physical property variations associated with overoxidation. Furthermore, we demonstrate a good signal-to-noise ratio in inelastic magnetic neutron scattering measurements of spin-wave excitations. A superconducting impurity phase, found to appear in Ca-doped samples at high do** levels, is identified as TiO. △ Less

Submitted 18 June, 2021; originally announced June 2021.

Journal ref: Phys. Rev. Materials 5, 125003 (2021)

Interlayer hybridization in graphene quasicrystal and other bilayer graphene systems

Authors: Guodong Yu, Yunhua Wang, Mikhail I. Katsnelson, Hai-Qing Lin, Shengjun Yuan

Abstract: The incommensurate 30$^{\circ}$ twisted bilayer graphene (BG) possesses both relativistic Dirac fermions and quasiperiodicity with 12-fold rotational symmetry arising from the interlayer interaction [\href{https://science.sciencemag.org/content/361/6404/782}{Ahn et al., Science \textbf{361}, 782 (2018)} and \href{https://www.pnas.org/content/115/27/6928}{Yao et al., Proc. Natl. Acad. Sci. \textbf{… ▽ More The incommensurate 30$^{\circ}$ twisted bilayer graphene (BG) possesses both relativistic Dirac fermions and quasiperiodicity with 12-fold rotational symmetry arising from the interlayer interaction [\href{https://science.sciencemag.org/content/361/6404/782}{Ahn et al., Science \textbf{361}, 782 (2018)} and \href{https://www.pnas.org/content/115/27/6928}{Yao et al., Proc. Natl. Acad. Sci. \textbf{115}, 6928 (2018)}]. Understanding how the interlayer states interact with each other is of vital importance for identifying and subsequently engineering the quasicrystalline order in the layered structures. Herein, via symmetry and group representation theory we unravel the interlayer hybridization selection rules governing the interlayer coupling in both untwisted and twisted BG systems. Compared with the only allowed equivalent hybridization in $D_{6h}$ untwisted BG, $D_6$ twisted BG permits equivalent and mixed hybridizations, and $D_{6d}$ graphene quasicrystal allows both equivalent and non-equivalent hybridizations. The energy-dependent hybridization strengths in graphene quasicrystal and $D_6$ twisted BG show two remarkable characteristics: (i) near the Fermi level the weak hybridization owing to the relatively large energy difference between Dirac bands from top and bottom layers, and (ii) in high-energy regions the electron-hole asymmetry of hybridization strength with stronger interlayer coupling for holes, which arises from the non-nearest-neighbor interlayer hop**s and the wave-function phase difference between paring states. These hybridization-generated band structures and their hybridization strength characteristics are verified by the calculated optical conductivity spectra. Our theoretical study paves a way for revealing the interlayer hybridization in van der Waals layered systems. △ Less

Submitted 17 November, 2021; v1 submitted 13 May, 2021; originally announced May 2021.

Electronic properties and quasi-particle model of monolayer MoSi$_2$N$_4$

Authors: Zhenwei Wang, Xueheng Kuang, Guodong Yu, Peiliang Zhao, Hongxia Zhong, Shengjun Yuan

Abstract: By a combined study with first-principles calculations and symmetry analysis, we theoretically investigate the electronic properties of monolayer MoSi$_2$N$_4$. While the spin-orbital coupling results in bands splitting, the horizontal mirror symmetry locks the spin polarization along z-direction. In addition, a three-band tight-binding model is constructed to describe the low-energy quasi-particl… ▽ More By a combined study with first-principles calculations and symmetry analysis, we theoretically investigate the electronic properties of monolayer MoSi$_2$N$_4$. While the spin-orbital coupling results in bands splitting, the horizontal mirror symmetry locks the spin polarization along z-direction. In addition, a three-band tight-binding model is constructed to describe the low-energy quasi-particle states of monolayer MoSi$_2$N$_4$, which can be generalized to strained MoSi$_2$N$_4$ and its derivatives. The calculations using the tight-binding model show an undamped $\sqrt{q}$-dependent plasmon mode that agrees well with the results of first-principles calculations. Our model can be extended to be suitable for future theoretical and numerical studies of low-energy properties in MoSi$_2$N$_4$ family materials. Furthermore, the study of electronic properties of monolayer MoSi$_2$N$_4$ paves a way for its applications in spintronics and plasmonics. △ Less

Submitted 16 October, 2021; v1 submitted 29 March, 2021; originally announced March 2021.

Comments: 8 pages, 8 figures

Structure-Composition-Property Relationships in Antiperovskite Nitrides: Guiding a Rational Alloy Design

Authors: Hongxia Zhong, Chunbao Feng, Hai Wang, Dan Han, Guodong Yu, Wenqi Xiong, Yunhai Li, Mao Yang, Gang Tang, Shengjun Yuan

Abstract: The alloy strategy through A- or X-site is a common method for experimental preparation of high-performance and stable lead-based perovskite solar cells. As one of the important candidates for lead-free and stable photovoltaic absorber, the inorganic antiperovskite family has recently been reported to exhibit excellent optoelectronic properties. However, the current reports on the design of antipe… ▽ More The alloy strategy through A- or X-site is a common method for experimental preparation of high-performance and stable lead-based perovskite solar cells. As one of the important candidates for lead-free and stable photovoltaic absorber, the inorganic antiperovskite family has recently been reported to exhibit excellent optoelectronic properties. However, the current reports on the design of antiperovskite alloys are rare. In this work, we investigated the previously overlooked electronic property (e.g., conduction band convergence), static dielectric constant, and exciton binding energy in inorganic antiperovskite nitrides by first-principles calculations. Then, we reveal a linear relationship between tolerance factor and various physical quantities. Guided by the established structure-composition-property relationship in six antiperovskite nitrides X3NA (X2+ = Mg2+, Ca2+, Sr2+; A3- = P3-, As3-, Sb3-, Bi3-), for the first time, we design a promising antiperovskite alloy Mg3NAs0.5Bi0.5 with the quasi-direct band gap of 1.402 eV. Finally, we make a comprehensive comparison between antiperovskite nitrides and conventional halide perovskites for pointing out the future direction for device applications. △ Less

Submitted 7 October, 2021; v1 submitted 27 March, 2021; originally announced March 2021.

Journal ref: ACS Appl. Mater. Interfaces 2021

Tunable ferroelectricity in hBN intercalated twisted double-layer graphene

Authors: Yibo Wang, Siqi Jiang, **gkuan Xiao, Xiaofan Cai, Di Zhang, ** Wang, Guodong Ma, Yaqing Han, Jiabei Huang, Kenji Watanabe, Takashi Taniguchi, Alexander S. Mayorov, Geliang Yu

Abstract: Van der Waals (vdW) assembly of two-dimensional materials has been long recognized as a powerful tool to create unique systems with properties that cannot be found in natural compounds. However, among the variety of vdW heterostructures and their various properties, only a few have revealed metallic and ferroelectric behaviour signatures. Here we show ferroelectric semimetal made of double-gated d… ▽ More Van der Waals (vdW) assembly of two-dimensional materials has been long recognized as a powerful tool to create unique systems with properties that cannot be found in natural compounds. However, among the variety of vdW heterostructures and their various properties, only a few have revealed metallic and ferroelectric behaviour signatures. Here we show ferroelectric semimetal made of double-gated double-layer graphene separated by an atomically thin crystal of hexagonal boron nitride, which demonstrating high room temperature mobility of the order of 10 m$^2$V$^{-1}$s$^{-1}$ and exhibits robust ambipolar switching in response to the external electric field. The observed hysteresis is tunable, reversible and persists above room temperature. Our fabrication method expands the family of ferroelectric vdW compounds and offers a route for develo** novel phase-changing devices. △ Less

Submitted 24 February, 2021; originally announced February 2021.

Creation of a Chiral Bobber Lattice in Helimagnet-Multilayer Heterostructures

Authors: Ke**g Ran, Yizhou Liu, Yao Guang, David M. Burn, Gerrit van der Laan, Thorsten Hesjedal, Haifeng Du, Guoqiang Yu, Shilei Zhang

Abstract: A chiral bobber is a localized three-dimensional magnetization configuration, terminated by a singularity. Chiral bobbers coexist with magnetic skyrmions in chiral magnets, lending themselves to new types of skyrmion-complementary bits of information. However, the on-demand creation of bobbers, as well as their direct observation remained elusive. Here, we introduce a new mechanism for creating a… ▽ More A chiral bobber is a localized three-dimensional magnetization configuration, terminated by a singularity. Chiral bobbers coexist with magnetic skyrmions in chiral magnets, lending themselves to new types of skyrmion-complementary bits of information. However, the on-demand creation of bobbers, as well as their direct observation remained elusive. Here, we introduce a new mechanism for creating a stable chiral bobber lattice state via the proximity of two skyrmion species with comparable size. This effect is experimentally demonstrated in a Cu$_2$OSeO$_3$/[Ta/CoFeB/MgO]$_4$ heterostructure in which an exotic bobber lattice state emerges in the phase diagram of Cu$_2$OSeO$_3$. To unambiguously reveal the existence of the chiral bobber lattice state, we have developed a novel characterization technique, magnetic truncation rod analysis, which is based on resonant elastic x-ray scattering. △ Less

Submitted 20 December, 2020; originally announced December 2020.

Evidence for a Monolayer Excitonic Insulator

Authors: Yanyu Jia, Pengjie Wang, Cheng-Li Chiu, Zhida Song, Guo Yu, Berthold Jäck, Shiming Lei, Sebastian Klemenz, F. Alexandre Cevallos, Michael Onyszczak, Nadezhda Fishchenko, Xiaomeng Liu, Gelareh Farahi, Fang Xie, Yuanfeng Xu, Kenji Watanabe, Takashi Taniguchi, B. Andrei Bernevig, Robert J. Cava, Leslie M. Schoop, Ali Yazdani, Sanfeng Wu

Abstract: The interplay between topology and correlations can generate a variety of quantum phases, many of which remain to be explored. Recent advances have identified monolayer WTe2 as a promising material for doing so in a highly tunable fashion. The ground state of this two-dimensional (2D) crystal can be electrostatically tuned from a quantum spin Hall insulator (QSHI) to a superconductor. However, muc… ▽ More The interplay between topology and correlations can generate a variety of quantum phases, many of which remain to be explored. Recent advances have identified monolayer WTe2 as a promising material for doing so in a highly tunable fashion. The ground state of this two-dimensional (2D) crystal can be electrostatically tuned from a quantum spin Hall insulator (QSHI) to a superconductor. However, much remains unknown about the gap-opening mechanism of the insulating state. Here we report evidence that the QSHI is also an excitonic insulator (EI), arising from the spontaneous formation of electron-hole bound states (excitons). We reveal the presence of an intrinsic insulating state at the charge neutrality point (CNP) in clean samples and confirm the correlated nature of this charge-neutral insulator by tunneling spectroscopy. We provide evidence against alternative scenarios of a band insulator or a localized insulator and support the existence of an EI phase in the clean limit. These observations lay the foundation for understanding a new class of correlated insulators with nontrivial topology and identify monolayer WTe2 as a promising candidate for exploring quantum phases of ground-state excitons. △ Less

Submitted 3 January, 2022; v1 submitted 11 October, 2020; originally announced October 2020.

Comments: 39 pages; Nat. Phys. (2021)