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Direct visualization and control of SrOx segregation on semiconducting Nb doped SrTiO3 (100) surface
Authors:
Hyang Keun Yoo,
Daniel Schwarz,
Soren Ulstrup,
Woo** Kim,
Chris Jozwiak,
Aaron Bostwick,
Tae Won Noh,
Eli Rotenberg,
Young Jun Chang
Abstract:
We investigated how SrOx segregates on a Nb doped SrTiO3 (100) surface by in air annealing. Using atomic force and photoemission electron microscopes, we can directly visualize the morphology and the electronic phase changes with SrOx segregation. SrOx islands less than 2 micron meter in size and 1-5 unit cells thick nucleate first and grow in a labyrinth domain pattern. After prolonged annealing,…
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We investigated how SrOx segregates on a Nb doped SrTiO3 (100) surface by in air annealing. Using atomic force and photoemission electron microscopes, we can directly visualize the morphology and the electronic phase changes with SrOx segregation. SrOx islands less than 2 micron meter in size and 1-5 unit cells thick nucleate first and grow in a labyrinth domain pattern. After prolonged annealing, SrOx forms a ~10 nm thick film. We show that the domain pattern can be controlled by introducing a surface miscut angle of SrTiO3. Additionally, the segregated SrOx has a lower work function, compared to that of SrTiO3. These results suggest that the control and tunability of SrOx segregation is applicable to the design of a new functional electronic devices in the semiconducting SrTiO3 based heterostructure.
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Submitted 13 October, 2022;
originally announced October 2022.
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In situ investigation of conducting interface formation in LaAlO3/SrTiO3 heterostructure
Authors:
Hyang Keun Yoo,
Luca Moreschini,
Aaron Bostwick,
Andrew L. Walter,
Tae Won Noh,
Eli Rotenberg,
Young Jun Chang
Abstract:
The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed…
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The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed a built-in potential (V_{bi}) proportional to the polar LAO thickness starting from the first unit cell (UC) with CI formation appearing above 3 UCs. However, we found that the V bi is removed by synchrotron ultraviolet (UV)-irradiation; The built-in potential is recovered by oxygen gas (O_{2}(g))-exposure. Furthermore, after UV-irradiation, the CI appears even below 3UC of LAO. Our results demonstrate not only the V_{bi}-driven CI formation in asgrown LAO/STO, but also a new route to control of the interface state by UV lithographic patterning or other surface modification.
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Submitted 12 May, 2021;
originally announced May 2021.
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Enhanced tunability of two-dimensional electron gas on SrTiO3 through heterostructuring
Authors:
Hyang Keun Yoo,
Luca Moreschini,
Andrew L. Walter,
Aaron Bostwick,
Karsten Horn,
Eli Rotenberg,
Young Jun Chang
Abstract:
Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO3 (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the…
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Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO3 (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the 2DEG in LTO/STO is increased by a factor of ~4 times, compared to that of the bare STO. By oxygen gas exposure, it becomes 10 times smaller than that of the bare STO. This enhanced tunability is attributed to the drastic surface property change of a polar LTO layer by UV irradiation and O2 exposure. This indicates that the 2DEG controllability in LTO/STO is more reliable than that on the bare STO driven by defects, such an oxygen vacancy.
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Submitted 12 May, 2021;
originally announced May 2021.
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Spatially Resolved Electronic Properties of Single-Layer WS$_2$ on Transition Metal Oxides
Authors:
Søren Ulstrup,
Jyoti Katoch,
Roland J. Koch,
Daniel Schwarz,
Simranjeet Singh,
Kathleen M. McCreary,
Hyang Keun Yoo,
**song Xu,
Berend T. Jonker,
Roland K. Kawakami,
Aaron Bostwick,
Eli Rotenberg,
Chris Jozwiak
Abstract:
There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic, spintronic, and optical properties can lead to a change in device paradigms. A critical need is to understand the interface between TMDCs and insulating substrates, for e…
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There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic, spintronic, and optical properties can lead to a change in device paradigms. A critical need is to understand the interface between TMDCs and insulating substrates, for example high-$κ$ dielectrics, which can strongly impact the electronic properties such as the optical gap. Here we show that the chemical and electronic properties of the single-layer (SL) TMDC, WS$_2$, can be transferred onto high-$κ$ transition metal oxide substrates TiO$_2$ and SrTiO$_3$. The resulting samples are much more suitable for measuring their electronic and chemical structures with angle-resolved photoemission than their native-grown SiO$_2$ substrates. We probe the WS$_2$ on the micron scale across 100-micron flakes, and find that the occupied electronic structure is exactly as predicted for freestanding SL WS$_2$ with a strong spin-orbit splitting of 420~meV and a direct band gap at the valence band maximum. Our results suggest that TMDCs can be combined with arbitrary multi-functional oxides, which may introduce alternative means of controlling the optoelectronic properties of such materials.
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Submitted 26 October, 2016;
originally announced October 2016.
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Polaron transport and thermoelectric behavior in La-doped SrTiO3 thin films with elemental vacancies
Authors:
Woo Seok Choi,
Hyang Keun Yoo,
Hiromichi Ohta
Abstract:
Electrodynamic properties of La-doped SrTiO3 thin films with controlled elemental vacancies have been investigated using optical spectroscopy and thermopower measurement. In particular, we observed a correlation between the polaron formation and thermoelectric properties of the transition metal oxide (TMO) thin films. With decreasing oxygen partial pressure during the film growth (P(O2)), a system…
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Electrodynamic properties of La-doped SrTiO3 thin films with controlled elemental vacancies have been investigated using optical spectroscopy and thermopower measurement. In particular, we observed a correlation between the polaron formation and thermoelectric properties of the transition metal oxide (TMO) thin films. With decreasing oxygen partial pressure during the film growth (P(O2)), a systematic lattice expansion was observed along with the increased elemental vacancy and carrier density, experimentally determined using optical spectroscopy. Moreover, we observed an absorption in the mid-infrared photon energy range, which is attributed to the polaron formation in the doped SrTiO3 system. Thermopower of the La-doped SrTiO3 thin films could be largely modulated from -120 to -260 μV K-1, reflecting an enhanced polaronic mass of ~3 < mpolron/m < ~4. The elemental vacancies generated in the TMO films grown at various P(O2) influences the global polaronic transport, which governs the charge transport behavior, including the thermoelectric properties.
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Submitted 11 May, 2015;
originally announced May 2015.
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Latent Instabilities in Metallic LaNiO3 Films by Strain Control of Fermi-Surface Topology
Authors:
Hyang Keun Yoo,
Seung Ill Hyun,
Luca Moreschini,
Hyeong-Do Kim,
Young Jun Chang,
Chang Hee Sohn,
Da Woon Jeong,
Soobin Sinn,
Yong Su Kim,
Aaron Bostwick,
Eli Rotenberg,
Ji Hoon Shim,
Tae Won Noh
Abstract:
Strain control is one of the most promising avenues to search for new emergent phenomena in transition-metal-oxide films. Here, we investigate the strain-induced changes of electronic structures in strongly correlated LaNiO3 (LNO) films, using angle-resolved photoemission spectroscopy and the dynamical mean-field theory. The strongly renormalized eg-orbital bands are systematically rearranged by m…
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Strain control is one of the most promising avenues to search for new emergent phenomena in transition-metal-oxide films. Here, we investigate the strain-induced changes of electronic structures in strongly correlated LaNiO3 (LNO) films, using angle-resolved photoemission spectroscopy and the dynamical mean-field theory. The strongly renormalized eg-orbital bands are systematically rearranged by misfit strain to change its fermiology. As tensile strain increases, the hole pocket centered at the A point elongates along the kz-axis and seems to become open, thus changing Fermi-surface (FS) topology from three- to quasi-two-dimensional. Concomitantly, the FS shape becomes flattened to enhance FS nesting. A FS superstructure with Q1 = (1/2,1/2,1/2) appears in all LNO films, while a tensile-strained LNO film has an additional Q2 = (1/4,1/4,1/4) modulation, indicating that some instabilities are present in metallic LNO films. Charge disproportionation and spin-density-wave fluctuations observed in other nickelates might be their most probable origins.
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Submitted 4 March, 2015; v1 submitted 10 June, 2014;
originally announced June 2014.
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Dimensional crossover of the electronic structure in LaNiO3 ultrathin films: Orbital reconstruction, Fermi surface nesting, and the origin of the metal-insulator transition
Authors:
Hyang Keun Yoo,
Seung Ill Hyun,
Luca Moreschini,
Young Jun Chang,
Da Woon Jeong,
Chang Hee Sohn,
Yong Su Kim,
Hyeong-Do Kim,
Aaron Bostwick,
Eli Rotenberg,
Ji Hoon Shim,
Tae Won Noh
Abstract:
Dimensionality control in the LaNiO3 (LNO) heterostructure has attracted attention due to its two-dimensional (2D) electronic structure was predicted to have an orbital ordered insulating ground state, analogous to that of the parent compound of high-Tc cuprate superconductors [P. Hansmann et al., Phys. Rev. Lett. 103, 016401 (2009)]. Here, we directly measured the electronic structure of LNO ultr…
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Dimensionality control in the LaNiO3 (LNO) heterostructure has attracted attention due to its two-dimensional (2D) electronic structure was predicted to have an orbital ordered insulating ground state, analogous to that of the parent compound of high-Tc cuprate superconductors [P. Hansmann et al., Phys. Rev. Lett. 103, 016401 (2009)]. Here, we directly measured the electronic structure of LNO ultrathin films using in situ angle-resolved photoemission spectroscopy (ARPES). We recognized the dimensional crossover of the electronic structure around 3-unit cells (UC)-thick LNO film and observed the orbital reconstruction. However, complete orbital ordering was not achieved. Instead, we observed that the Fermi surface nesting effect became strong in the 2D LNO ultrathin film. These results indicated that the orbital reconstruction should be described by taking into account the strong nesting effect to search for the novel phenomena, such as superconductivity in 2D LNO heterostructure. In addition, the APRES spectra showed that the Fermi surface existed down to a 1-UC-thick film, which showed insulating behavior in transport measurements. We suggested that the metal-insulator transition in the transport properties may originate from Anderson localization.
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Submitted 3 September, 2013; v1 submitted 3 September, 2013;
originally announced September 2013.
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Stabilizing the forming process in unipolar resistance switching using an improved compliance current limiter
Authors:
S. B. Lee,
S. H. Chang,
H. K. Yoo,
B. S. Kang
Abstract:
The high reset current IR in unipolar resistance switching now poses major obstacles to practical applications in memory devices. In particular, the first IR-value after the forming process is so high that the capacitors sometimes do not exhibit reliable unipolar resistance switching. We found that the compliance current Icomp is a critical parameter for reducing IR-values. We therefore introduced…
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The high reset current IR in unipolar resistance switching now poses major obstacles to practical applications in memory devices. In particular, the first IR-value after the forming process is so high that the capacitors sometimes do not exhibit reliable unipolar resistance switching. We found that the compliance current Icomp is a critical parameter for reducing IR-values. We therefore introduced an improved, simple, easy to use Icomp-limiter that stabilizes the forming process by drastically decreasing current overflow, in order to precisely control the Icomp- and subsequent IR-values.
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Submitted 26 June, 2010;
originally announced June 2010.
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Reduction of high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor do**
Authors:
S. B. Lee,
A. Kim,
J. S. Lee,
S. H. Chang,
H. K. Yoo,
T. W. Noh,
B. Kahng,
M. -J. Lee,
C. J. Kim,
B. S. Kang
Abstract:
The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that,during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce IR. Do** with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, openin…
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The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that,during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce IR. Do** with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for Icomp. By decreasing Icomp with acceptor do**, we could reduce IR in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease of Icomp by carrier do** could be a viable alternative for reducing IR in unipolar resistance switching.
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Submitted 6 March, 2010;
originally announced March 2010.
