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Signature of BKT-like spin transport in a quasi-2D antiferromagnet BaNi$_2$V$_2$O$_8$
Authors:
Kurea Nakagawa,
Minoru Kanega,
Tomoyuki Yokouchi,
Masahiro Sato,
Yuki Shiomi
Abstract:
In two-dimensional (2D) spin systems, the augmentation of spin fluctuations gives rise to quasi-long-range order; however, how they manifest in spin transport remains unclear. Here we investigate the spin Seebeck effect (SSE) in a quasi-2D antiferromagnet, BaNi$_2$V$_2$O$_8$, which has been reported to exhibit the Berezinskii-Kosterlitz-Thouless (BKT) transition owing to its distinct 2D nature. We…
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In two-dimensional (2D) spin systems, the augmentation of spin fluctuations gives rise to quasi-long-range order; however, how they manifest in spin transport remains unclear. Here we investigate the spin Seebeck effect (SSE) in a quasi-2D antiferromagnet, BaNi$_2$V$_2$O$_8$, which has been reported to exhibit the Berezinskii-Kosterlitz-Thouless (BKT) transition owing to its distinct 2D nature. We found that the SSE in Pt / BaNi$_2$V$_2$O$_8$ persists well above the Néel temperature, significantly different from the behavior of 3D ordered magnets. Our numerical analysis for a 2D microscopic spin model supports the hypothesis that the observed SSE is linked to strong magnetic correlations in the BKT-like phase.
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Submitted 25 December, 2023;
originally announced December 2023.
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Emergent electric field induced by current-driven domain wall motion in a room-temperature antiferromagnet FeSn2
Authors:
Tomoyuki Yokouchi,
Yuta Yamane,
Yasufumi Araki,
Jun'ichi Ieda,
Yuki Shiomi
Abstract:
Antiferromagnets have attracted extensive interest as platforms for nanoscale spintronic devices owing to ultrafast spin dynamics and lack of a stray field. One of the crucial missing pieces in antiferromagnets is a quantum-mechanical electric field known as an emergent electric field, which has been observed for the motion of ferromagnetic spin texture. Since this phenomenon allows for the develo…
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Antiferromagnets have attracted extensive interest as platforms for nanoscale spintronic devices owing to ultrafast spin dynamics and lack of a stray field. One of the crucial missing pieces in antiferromagnets is a quantum-mechanical electric field known as an emergent electric field, which has been observed for the motion of ferromagnetic spin texture. Since this phenomenon allows for the development of novel spintronic devices such as quantum inductors, its identification in antiferromagnets is vital for develo** nanoscale spintronic devices. Here, we demonstrate that the motion of antiferromagnetic spin textures generates an emergent electric field. In a room-temperature antiferromagnet FeSn2, we observed large current-nonlinear responses in the imaginary part of the complex impedance at and well above room temperature. This signal is attributed to an emergent electric field resulting from the nonadiabatic electron spin dynamics during the current-induced motion of antiferromagnetic domain walls. Notably, the observed electric response is strongly enhanced as the sample size decreases and robust against magnetic fields. Our finding may pave the way for novel nanoscale quantum spintronic devices.
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Submitted 3 December, 2023;
originally announced December 2023.
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Giant Magnetochiral Anisotropy in Weyl-semimetal WTe2 Induced by Diverging Berry Curvature
Authors:
Tomoyuki Yokouchi,
Yuya Ikeda,
Takahiro Morimoto,
Yuki Shiomi
Abstract:
The concept of Berry curvature is essential for various transport phenomena. However, an effect of the Berry curvature on magnetochiral anisotropy, i.e. nonreciprocal magneto-transport, is still elusive. Here, we report the Berry curvature originates the large magnetochiral anisotropy. In Weyl-semimetal WTe2, we observed the strong enhancement of the magnetochiral anisotropy when the Fermi level i…
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The concept of Berry curvature is essential for various transport phenomena. However, an effect of the Berry curvature on magnetochiral anisotropy, i.e. nonreciprocal magneto-transport, is still elusive. Here, we report the Berry curvature originates the large magnetochiral anisotropy. In Weyl-semimetal WTe2, we observed the strong enhancement of the magnetochiral anisotropy when the Fermi level is located near the Weyl points. Notably, the maximal figure of merit $\barγ$ reaches $1.2\,{\times}10^{-6} \rm{m^2T^{-1}A^{-1}}$, which is the largest ever reported in bulk materials. Our semiclassical calculation shows that the diverging Berry curvature at the Weyl points strongly enhances the magnetochiral anisotropy.
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Submitted 21 November, 2022;
originally announced November 2022.
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Pattern recognition with neuromorphic computing using magnetic-field induced dynamics of skyrmions
Authors:
Tomoyuki Yokouchi,
Satoshi Sugimoto,
Bivas Rana,
Shinichiro Seki,
Naoki Ogawa,
Yuki Shiomi,
Shinya Kasai,
Yoshichika Otani
Abstract:
Nonlinear phenomena in physical systems can be used for brain-inspired computing with low energy consumption. Response from the dynamics of a topological spin structure called skyrmion is one of the candidates for such a neuromorphic computing. However, its ability has not been well explored experimentally. Here, we experimentally demonstrate neuromorphic computing using nonlinear response origina…
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Nonlinear phenomena in physical systems can be used for brain-inspired computing with low energy consumption. Response from the dynamics of a topological spin structure called skyrmion is one of the candidates for such a neuromorphic computing. However, its ability has not been well explored experimentally. Here, we experimentally demonstrate neuromorphic computing using nonlinear response originating from magnetic-field induced dynamics of skyrmions. We designed a simple-structured skyrmion-based neuromorphic device and succeeded in handwritten digit recognition with the accuracy as large as 94.7 % and waveform recognition. Notably, there exists a positive correlation between the recognition accuracy and the number of skyrmions in the devices. The large degree of freedoms of skyrmion systems, such as the position and the size, originate the more complex nonlinear map** and the larger output dimension, and thus high accuracy. Our results provide a guideline for develo** energy-saving and high-performance skyrmion neuromorphic computing devices.
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Submitted 27 April, 2022;
originally announced April 2022.
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Enhanced Electrical Magnetochiral Effect by Spin-hedgehog Lattice Structural Transition
Authors:
Aki Kitaori,
Naoya Kanazawa,
Hiroaki Ishizuka,
Tomoyuki Yokouchi,
Naoto Nagaosa,
Yoshinori Tokura
Abstract:
Nonreciprocal resistance, depending on both directions of current ($j$) and magnetic-field ($H$) or magnetization ($M$), is generally expected to emerge in a chiral conductor, and be maximized for $j$ $\parallel$ $H$($M$). This phenomenon, electrical magnetochiral effect (eMChE), is empirically known to increase with $H$ in a paramagnetic or fully ferromagnetic state on chiral lattice or to depend…
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Nonreciprocal resistance, depending on both directions of current ($j$) and magnetic-field ($H$) or magnetization ($M$), is generally expected to emerge in a chiral conductor, and be maximized for $j$ $\parallel$ $H$($M$). This phenomenon, electrical magnetochiral effect (eMChE), is empirically known to increase with $H$ in a paramagnetic or fully ferromagnetic state on chiral lattice or to depend on fluctuation properties of a helimagnetic state. We report here the eMChE over a wide temperature range in the chiral-lattice magnet MnGe in which the spin hedgehog lattice (HL) forms with the triple spin-helix modulation vectors. The magnitude of nonreciprocal resistivity is sharply enhanced in the course of the field-induced structural transition of HL from cubic to rhombohedral form. This is attributed to the enhanced asymmetric electron scatterings by vector spin chirality in association with the large thermal fluctuations of spin hedgehogs.
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Submitted 25 April, 2021;
originally announced April 2021.
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Emergent electromagnetic induction beyond room temperature
Authors:
Aki Kitaori,
Naoya Kanazawa,
Tomoyuki Yokouchi,
Fumitaka Kagawa,
Naoto Nagaosa,
Yoshinori Tokura
Abstract:
Emergent electromagnetic induction based on electrodynamics of noncollinear spin states may enable dramatic miniaturization of inductor elements widely used in electric circuits, yet many issues are to be solved toward application. One such problem is how to increase working temperature. We report the large emergent electromagnetic induction achieved around and above room temperature based on shor…
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Emergent electromagnetic induction based on electrodynamics of noncollinear spin states may enable dramatic miniaturization of inductor elements widely used in electric circuits, yet many issues are to be solved toward application. One such problem is how to increase working temperature. We report the large emergent electromagnetic induction achieved around and above room temperature based on short-period ($\leq$ 3 nm) spin-spiral states of a metallic helimagnet ${\rm YMn}_{6}{\rm Sn}_{6}$. The observed inductance value $L$ and its sign are observed to vary to a large extent, depending not only on the spin helix structure controlled by temperature and magnetic field but also on the current density. The present finding on room-temperature operation and possible sign control of $L$ may provide a new step toward realizing microscale quantum inductors.
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Submitted 3 March, 2021;
originally announced March 2021.
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Slow steady flow of a skyrmion lattice in a confined geometry probed by resistance narrow-band noise
Authors:
Takuro Sato,
Wataru Koshibae,
Akiko Kikkawa,
Tomoyuki Yokouchi,
Hiroshi Oike,
Yasujiro Taguchi,
Naoto Nagaosa,
Yoshinori Tokura,
Fumitaka Kagawa
Abstract:
Using resistance fluctuation spectroscopy, we observe current-induced narrow-band noise (NBN) in the magnetic skyrmion-lattice phase of micrometer-sized MnSi. The NBN appears only when electric-current density exceeds a threshold value, indicating that the current-driven motion of the skyrmion lattice triggers the NBN. The observed NBN frequency is 10-10$^4$ Hz at $\sim$10$^{9}$ A/m$^{2}$, implyin…
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Using resistance fluctuation spectroscopy, we observe current-induced narrow-band noise (NBN) in the magnetic skyrmion-lattice phase of micrometer-sized MnSi. The NBN appears only when electric-current density exceeds a threshold value, indicating that the current-driven motion of the skyrmion lattice triggers the NBN. The observed NBN frequency is 10-10$^4$ Hz at $\sim$10$^{9}$ A/m$^{2}$, implying a skyrmion steady flow velocity of 1-100 $μ$m/s, 3-5 orders of magnitude slower than previously reported. The temperature evolution of the NBN frequency suggests that the steady flow entails thermally activated processes, which are most likely due to skyrmion creation and annihilation at the sample edges. This scenario is qualitatively supported by our numerical simulations considering boundary effects, which reveals that the edges limit the steady flow of skyrmions, especially at low temperatures. We discuss a mechanism that dramatically slows the skyrmion steady flow in a microfabricated specimen.
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Submitted 15 April, 2020;
originally announced April 2020.
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Electrical magnetochiral effect induced by chiral spin fluctuations
Authors:
T. Yokouchi,
N. Kanazawa,
A. Kikkawa,
D. Morikawa,
K. Shibata,
T. Arima,
Y. Taguchi,
F. Kagawa,
Y. Tokura
Abstract:
Chirality of matter can produce unique responses in optics, electricity and magnetism. In particular, magnetic crystals transmit their handedness to the magnetism via antisymmetric exchange interaction of relativistic origin, producing helical spin orders as well as their fluctuations. Here we report for a chiral magnet MnSi that chiral spin fluctuations manifest themselves in the electrical magne…
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Chirality of matter can produce unique responses in optics, electricity and magnetism. In particular, magnetic crystals transmit their handedness to the magnetism via antisymmetric exchange interaction of relativistic origin, producing helical spin orders as well as their fluctuations. Here we report for a chiral magnet MnSi that chiral spin fluctuations manifest themselves in the electrical magnetochiral effect (eMChE), i.e. the nonreciprocal and nonlinear response characterized by the electrical conductance depending on inner product of electric and magnetic fields $\boldsymbol{E} \cdot \boldsymbol{B}$. Prominent eMChE signals emerge at specific temperature-magnetic field-pressure regions: in the paramagnetic phase just above the helical ordering temperature and in the partially-ordered topological spin state at low temperatures and high pressures, where thermal and quantum spin fluctuations are conspicuous in proximity of classical and quantum phase transitions, respectively. The finding of the asymmetric electron scattering by chiral spin fluctuations may explore new electromagnetic functionality in chiral magnets.
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Submitted 14 March, 2017;
originally announced March 2017.
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Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect
Authors:
T. Yokouchi,
N. Kanazawa,
A. Tsukazaki,
Y. Kozuka,
A. Kikkawa,
Y. Taguchi,
M. Kawasaki,
M. Ichikawa,
F. Kagawa,
Y. Tokura
Abstract:
We investigate skyrmion formation in both a single crystalline bulk and epitaxial thin films of MnSi by measurements of planar Hall effect. A prominent stepwise field profile of planar Hall effect is observed in the well-established skyrmion phase region in the bulk sample, which is assigned to anisotropic magnetoresistance effect with respect to the magnetic modulation direction. We also detect t…
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We investigate skyrmion formation in both a single crystalline bulk and epitaxial thin films of MnSi by measurements of planar Hall effect. A prominent stepwise field profile of planar Hall effect is observed in the well-established skyrmion phase region in the bulk sample, which is assigned to anisotropic magnetoresistance effect with respect to the magnetic modulation direction. We also detect the characteristic planar Hall anomalies in the thin films under the in-plane magnetic field at low temperatures, which indicates the formation of skyrmion strings lying in the film plane. Uniaxial magnetic anisotropy plays an important role in stabilizing the in-plane skyrmions in the MnSi thin film.
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Submitted 15 June, 2015;
originally announced June 2015.