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Termination of Graphene Edges Created by Hydrogen and Deuterium Plasmas
Authors:
Taisuke Ochi,
Masahiro Kamada,
Takamoto Yokosawa,
Kozo Mukai,
Jun Yoshinobu,
Tomohiro Matsui
Abstract:
Edge engineering is important for both fundamental research and applications as the device size decreases to nanometer scale. This is especially the case for graphene because a graphene edge shows totally different electronic properties depending on the atomic structure and the termination. It has recently been shown that an atomically precise zigzag edge can be obtained by etching graphene and gr…
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Edge engineering is important for both fundamental research and applications as the device size decreases to nanometer scale. This is especially the case for graphene because a graphene edge shows totally different electronic properties depending on the atomic structure and the termination. It has recently been shown that an atomically precise zigzag edge can be obtained by etching graphene and graphite using hydrogen (H) plasma. However, edge termination had not been studied directly. In this study, termination of edges created by H-plasma is studied by high-resolution electron energy loss spectroscopy (HREELS) to show that the edge is $\mathrm{sp}^{2}$ bonded and the edge carbon atom is terminated by only one H atom. This suggests that an ideal zigzag edge, which is not only atomically precise but also $\mathrm{sp}^{2}$ bonding, can be obtained by H-plasma etching. Etching of the graphite surface with plasma of a different isotope, deuterium (D), is also studied by scanning tunneling microscopy (STM) to show that D-plasma anisotropically etches graphite less efficiently, although it can make defects more efficiently, than H-plasma.
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Submitted 12 December, 2022; v1 submitted 31 October, 2022;
originally announced October 2022.
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Introducing Corrections to the Reflectance of Graphene by Light Emission
Authors:
Ken-ichi Sasaki,
Kenichi Hitachi,
Masahiro Kamada,
Takamoto Yokosawa,
Taisuke Ochi,
Tomohiro Matsui
Abstract:
Monolayer graphene absorbs 2.3 percent of the incident visible light. This 'small' absorption has been used to emphasize the visual transparency of graphene, but it in fact means that multilayer graphene absorbs a sizable fraction of incident light, which causes non-negligible fluorescence. In this paper, we formulate the light emission properties of multilayer graphene composed of tens to hundred…
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Monolayer graphene absorbs 2.3 percent of the incident visible light. This 'small' absorption has been used to emphasize the visual transparency of graphene, but it in fact means that multilayer graphene absorbs a sizable fraction of incident light, which causes non-negligible fluorescence. In this paper, we formulate the light emission properties of multilayer graphene composed of tens to hundreds of layers using a transfer matrix method and confirm the method's validity experimentally. We could quantitatively explain the measured contrasts of multilayer graphene on SiO$_2$/Si substrates and found sizable corrections, which cannot be classified as incoherent light emissions, to the reflectance of visible light. The new component originates from coherent emission caused by absorption at each graphene layer. Multilayer graphene thus functions as a partial coherent light source of various wavelengths, and it may have surface-emitting laser applications.
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Submitted 28 May, 2024; v1 submitted 2 August, 2022;
originally announced August 2022.
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Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages
Authors:
Thomas Paul Weiss,
Ignacio Minguez-Bacho,
Elena Zuccalà,
Michele Melchiorre,
Nathalie Valle,
Brahime El Adib,
Tadahiro Yokosawa,
Erdmann Spiecker,
Julien Bachmann,
Phillip J. Dale,
Susanne Siebentritt
Abstract:
Currently, Sb$_2$Se$_3$ thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open circuit voltage, which is the focus of the work presented here. Polycrystalline thin film Sb$_2$Se$_3$ absorbers and solar cells are prepared in substrate configuration and the dominant recom…
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Currently, Sb$_2$Se$_3$ thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open circuit voltage, which is the focus of the work presented here. Polycrystalline thin film Sb$_2$Se$_3$ absorbers and solar cells are prepared in substrate configuration and the dominant recombination path is studied using photoluminescence spectroscopy and temperature dependent current-voltage characteristics. It is found that a post-deposition annealing after the CdS buffer layer deposition can effectively remove interface recombination since the activation energy of the dominant recombination path becomes equal to the bandgap of the Sb$_2$Se$_3$ absorber. The increased activation energy is accompanied by an increased photoluminescence yield, i.e. reduced non-radiative recombination. Finished Sb$_2$Se$_3$ solar cell devices reach open circuit voltages as high as 485 mV. Contrarily, the short-circuit current density of these devices is limiting the efficiency after the post-deposition annealing. It is shown that atomic layer deposited intermediate buffer layers such as TiO$_2$ or Sb$_2$Se$_3$ can pave the way for overcoming this limitation.
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Submitted 26 April, 2022;
originally announced April 2022.
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Nanoscale Fabrication of Graphene by Hydrogen-Plasma Etching
Authors:
Takamoto Yokosawa,
Masahiro Kamada,
Taisuke Ochi,
Yuki Koga,
Rin Takehara,
Masahiro Hara,
Tomohiro Matsui
Abstract:
Graphene is attracting vast interest due to its superior electronic and mechanical properties. However, structure and electronic properties of its edge are often neglected, although they are important for nanoscale devices because the edge ratio becomes larger by decreasing the device size. In this study, we suggest a way to fabricate a graphene with atomically aligned zigzag edges by applying hyd…
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Graphene is attracting vast interest due to its superior electronic and mechanical properties. However, structure and electronic properties of its edge are often neglected, although they are important for nanoscale devices because the edge ratio becomes larger by decreasing the device size. In this study, we suggest a way to fabricate a graphene with atomically aligned zigzag edges by applying hydrogen-plasma etching (HPE) technique. By patterning a graphene prior to HPE, it is succeeded to shape a graphene in desired structure. Both atomic force microscopy and Raman spectroscopy confirm that the graphene shaped by this technique preserves its honeycomb structure even on the edge, which is aligned with zigzag structure. Although the mechanism of the anisotropic etching by hydrogen-plasma have not been clarified yet, the sample position dependence of the etching rate suggests that the hydrogen-radicals are responsible for the anisotropic etching.
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Submitted 23 August, 2022; v1 submitted 9 March, 2022;
originally announced March 2022.
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Structural reorientation and compaction of porous MoS2 coatings during wear testing
Authors:
Sebastian Krauß,
Armin Seynstahl,
Stephan Tremmel,
Bernd Meyer,
Erik Bitzek,
Mathias Göken,
Tadahiro Yokosawa,
Benjamin Apeleo Zubiri,
Erdmann Spiecker,
Benoit Merle
Abstract:
Industrial upscaling frequently results in a different coating microstructure than the laboratory prototypes presented in the literature. Here, we investigate the wear behavior of physical vapor deposited (PVD) MoS2 coatings: A dense, nanocrystalline MoS2 coating, and a porous, prismatic-textured MoS2 coating. Transmission electron microscopy (TEM) investigations before and after wear testing evid…
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Industrial upscaling frequently results in a different coating microstructure than the laboratory prototypes presented in the literature. Here, we investigate the wear behavior of physical vapor deposited (PVD) MoS2 coatings: A dense, nanocrystalline MoS2 coating, and a porous, prismatic-textured MoS2 coating. Transmission electron microscopy (TEM) investigations before and after wear testing evidence a crystallographic reorientation towards a basal texture in both samples. A basal texture is usually desirable due to its low-friction properties. This favorable reorientation is associated to a tribological compaction of the porous specimens. Following running-in, sliding under high contact pressure ultimately leads to a wear rate as small as for an ideal grown bulk MoS2 single crystal grown by chemical vapor deposition (CVD). This suggests that the imperfections of industrial grade MoS2 coatings can be remediated by a suitable pretreatment.
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Submitted 21 August, 2022; v1 submitted 21 February, 2022;
originally announced February 2022.
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Topological Kagome magnet Co3Sn2S2 thin flakes with high electron mobility and large anomalous Hall effect
Authors:
M. Tanaka,
Y. Fujishiro,
M. Mogi,
Y. Kaneko,
T. Yokosawa,
N. Kanazawa,
S. Minami,
T. Koretsune,
R. Arita,
S. Tarucha,
M. Yamamoto,
Y. Tokura
Abstract:
Magnetic Weyl semimetals attract considerable interest not only for their topological quantum phenomena but also as an emerging materials class for realizing quantum anomalous Hall effect in the two-dimensional limit. A shandite compound Co3Sn2S2 with layered Kagome-lattices is one such material, where vigorous efforts have been devoted to synthesize the two-dimensional crystal. Here we report a s…
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Magnetic Weyl semimetals attract considerable interest not only for their topological quantum phenomena but also as an emerging materials class for realizing quantum anomalous Hall effect in the two-dimensional limit. A shandite compound Co3Sn2S2 with layered Kagome-lattices is one such material, where vigorous efforts have been devoted to synthesize the two-dimensional crystal. Here we report a synthesis of Co3Sn2S2 thin flakes with a thickness of 250 nm by chemical vapor transport method. We find that this facile bottom-up approach allows the formation of large-sized Co3Sn2S2 thin flakes of high-quality, where we identify the largest electron mobility (~2,600 cm2V-1s-1) among magnetic topological semimetals, as well as the large anomalous Hall conductivity (~1,400 Ω-1cm-1) and anomalous Hall angle (~32 %) arising from the Berry curvature. Our study provides a viable platform for studying high-quality thin flakes of magnetic Weyl semimetal and stimulate further research on unexplored topological phenomena in the two-dimensional limit.
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Submitted 15 September, 2020;
originally announced September 2020.
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Intrinsically Activated SrTiO3: Photocatalytic H2 Evolution from Neutral Aqueous Methanol Solution in the Absence of Any Noble Metal Cocatalyst
Authors:
Xuemei Zhou,
Ning Liu,
Tadahiro Yokosawa,
Andres Osvet,
Matthias E. Miehlich,
Karsten Meyer,
Erdmann Spiecker,
Patrik Schmuki
Abstract:
Noble metal cocatalysts are conventionally a crucial factor in oxide-semiconductor-based photocatalytic hydrogen generation. In the present work, we show that optimized high-temperature hydrogenation of commercially available strontium titanate (SrTiO3) powder can be used to engineer an intrinsic cocatalytic shell around nanoparticles that can create a photocatalyst that is highly effective withou…
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Noble metal cocatalysts are conventionally a crucial factor in oxide-semiconductor-based photocatalytic hydrogen generation. In the present work, we show that optimized high-temperature hydrogenation of commercially available strontium titanate (SrTiO3) powder can be used to engineer an intrinsic cocatalytic shell around nanoparticles that can create a photocatalyst that is highly effective without the use of any additional cocatalyst for hydrogen generation from neutral aqueous methanol solutions. This intrinsic activation effect can also be observed for SrTiO3[100] single crystal as well as Nb-doped SrTiO3 (100) single crystal. For all types of SrTiO3 samples (nanopowders and either of the single crystals), hydrogenation under optimum conditions leads to a surface-hydroxylated layer together with lattice defects visible by transmission electron microscopy, electron paramagnetic resonance (EPR), and photoluminescence (PL). Active samples provide states in a defective matrix -- this is in contrast to the inactive defects formed in other reductive atmospheres. In aqueous media, active SrTiO3 samples show a significant negative shift of the flatband potential (in photoelectrochemical as well as in capacitance data) and a lower charge-transfer resistance for photoexcited electrons. We therefore ascribe the remarkable cocatalyst-free activation of the material to a synergy between thermodynamics (altered interface energetics induced by hydroxylation) and kinetics (charge transfer mediation by suitable Ti3+ states).
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Submitted 14 April, 2020;
originally announced April 2020.
