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Crystal structure, properties and pressure-induced insulator-metal transition in layered kagome chalcogenides
Authors:
Hong Du,
Yu Zheng,
Cuiying Pei,
Chi-Ming Yim,
Yanpeng Qi,
Ruidan Zhong
Abstract:
Layered materials with kagome lattice have attracted a lot of attention due to the presence of nontrivial topological bands and correlated electronic states with tunability. In this work, we investigate a unique van der Waals (vdW) material system, $A_{2}M_{3}X_{4}$ ($A$ = K, Rb, Cs; $M$ = Ni, Pd; $X$ = S, Se), where transition metal kagome lattices, chalcogen honeycomb lattices and alkali metal t…
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Layered materials with kagome lattice have attracted a lot of attention due to the presence of nontrivial topological bands and correlated electronic states with tunability. In this work, we investigate a unique van der Waals (vdW) material system, $A_{2}M_{3}X_{4}$ ($A$ = K, Rb, Cs; $M$ = Ni, Pd; $X$ = S, Se), where transition metal kagome lattices, chalcogen honeycomb lattices and alkali metal triangular lattices coexist simultaneously. A notable feature of this material is that each Ni/Pd atom is positioned in the center of four chalcogen atoms, forming a local square-planar environment. This crystal field environment results in a low spin state $S$ = 0 of Ni$^{2+}$/Pd$^{2+}$. A systematic study of the crystal growth, crystal structure, magnetic and transport properties of two representative compounds, Rb$_{2}$Ni$_{3}$S$_{4}$ and Cs$_{2}$Ni$_{3}$Se$_{4}$, has been carried out on powder and single crystal samples. Both compounds exhibit nonmagnetic $p$-type semiconducting behavior, closely related to the particular chemical environment of Ni$^{2+}$ ions and the alkali metal intercalated vdW structure. Additionally, Cs$_{2}$Ni$_{3}$Se$_{4}$ undergoes an insulator-metal transition (IMT) in transport measurements under pressure up to 87.10 GPa without any structural phase transition, while Rb$_{2}$Ni$_{3}$S$_{4}$ persists in its semiconducting behavior.
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Submitted 10 June, 2024; v1 submitted 7 March, 2024;
originally announced March 2024.
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Avoided metallicity in a hole-doped Mott insulator on a triangular lattice
Authors:
Chi Ming Yim,
Gesa-R. Siemann,
Srdjan Stavrić,
Seunghyun Khim,
Izidor Benedičič,
Philip A. E. Murgatroyd,
Tommaso Antonelli,
Matthew D. Watson,
Andrew P. Mackenzie,
Silvia Picozzi,
Phil D. C. King,
Peter Wahl
Abstract:
Charge carrier do** of a Mott insulator is known to give rise to a wide variety of exotic emergent states, from high-temperature superconductivity to various charge, spin, and orbital orders. The physics underpinning their evolution is, however, poorly understood. A major challenge is the chemical complexity associated with traditional routes to the addition or removal of carriers. Here, we stud…
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Charge carrier do** of a Mott insulator is known to give rise to a wide variety of exotic emergent states, from high-temperature superconductivity to various charge, spin, and orbital orders. The physics underpinning their evolution is, however, poorly understood. A major challenge is the chemical complexity associated with traditional routes to the addition or removal of carriers. Here, we study the Mott insulating CrO$_2$ layer of the delafossite oxide PdCrO$_2$, where an intrinsic polar catastrophe provides a clean route to induce substantial do** of the surface layer. Despite this, from scanning tunneling microscopy and angle-resolved photoemission, we find that the surface retains an insulating character, but with a modified electronic structure and the development of a short-range ordered state with a distinct $(\sqrt{7}\times\sqrt{7})\mathrm{R}\pm 19.1^\circ$ periodicity. From density functional theory, we demonstrate how this reflects the formation of an intricate charge disproportionation that results in an insulating ground state of the surface layer that is disparate from the hidden Mott insulator found in the bulk. By applying voltage pulses to the surface layer, we induce substantial local modifications to this state, which we find relax on a time scale of tens of minutes, pointing to a glassy nature of the charge-disproportionated insulator realised here.
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Submitted 28 November, 2023;
originally announced November 2023.
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Tuneable electron-magnon coupling of ferromagnetic surface states in PdCoO$_2$
Authors:
Federico Mazzola,
Chi-Ming Yim,
Veronika Sunko,
Seunghyun Khim,
Pallavi Kushwaha,
Oliver J. Clark,
Lewis Bawden,
Igor Marković,
Dibyashree Chakraborti,
Timur K. Kim,
Moritz Hoesch,
Andrew P. Mackenzie,
Peter Wahl,
Philip D. C. King
Abstract:
Controlling spin wave excitations in magnetic materials underpins the burgeoning field of magnonics. Yet, little is known about how magnons interact with the conduction electrons of itinerant magnets, or how this interplay can be controlled. Via a surface-sensitive spectroscopic approach, we demonstrate a strong and highly-tuneable electron-magnon coupling at the Pd-terminated surface of the delaf…
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Controlling spin wave excitations in magnetic materials underpins the burgeoning field of magnonics. Yet, little is known about how magnons interact with the conduction electrons of itinerant magnets, or how this interplay can be controlled. Via a surface-sensitive spectroscopic approach, we demonstrate a strong and highly-tuneable electron-magnon coupling at the Pd-terminated surface of the delafossite oxide PdCoO$_2$, where a polar surface charge mediates a Stoner transition to itinerant surface ferromagnetism. We show how the coupling can be enhanced 7-fold with increasing surface disorder, and concomitant charge carrier do**, becoming sufficiently strong to drive the system into a polaronic regime, accompanied by a significant quasiparticle mass enhancement. Our study thus sheds new light on electron-magnon interactions in solid-state materials, and the ways in which these can be controlled.
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Submitted 9 December, 2021;
originally announced December 2021.
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Quasiparticle interference and quantum confinement in a correlated Rashba spin-split 2D electron liquid
Authors:
Chi Ming Yim,
Dibyashree Chakraborti,
Luke C. Rhodes,
Seunghyun Khim,
Andrew P. Mackenzie,
Peter Wahl
Abstract:
Exploiting inversion symmetry breaking (ISB) in systems with strong spin-orbit coupling promises control of spin through electric fields - crucial to achieve miniaturization in spintronic devices. Delivering on this promise requires a two-dimensional electron gas with a spin precession length shorter than the spin coherence length and a large spin splitting so that spin manipulation can be achieve…
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Exploiting inversion symmetry breaking (ISB) in systems with strong spin-orbit coupling promises control of spin through electric fields - crucial to achieve miniaturization in spintronic devices. Delivering on this promise requires a two-dimensional electron gas with a spin precession length shorter than the spin coherence length and a large spin splitting so that spin manipulation can be achieved over length scales of nanometers. Recently, the transition metal oxide terminations of delafossite oxides were found to exhibit a large Rashba spin splitting dominated by ISB. In this limit, the Fermi surface exhibits the same spin texture as for weak ISB, but the orbital texture is completely different, raising questions about the effect on quasiparticle scattering. We demonstrate that the spin-orbital selection rules relevant for conventional Rashba system are obeyed as true spin selection rules in this correlated electron liquid and determine its spin coherence length from quasiparticle interference imaging.
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Submitted 12 April, 2021;
originally announced April 2021.
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Magnetic surface reconstruction in the van-der-Waals antiferromagnet Fe$_{1+x}$Te
Authors:
C. Trainer,
M. Songvilay,
N. Qureshi,
A. Stunault,
C. M. Yim,
E. E. Rodriguez,
C. Heil,
V. Tsurkan,
M. A. Green,
A. Loidl,
P. Wahl,
C. Stock
Abstract:
Fe$_{1+x}$Te is a two dimensional van der Waals antiferromagnet that becomes superconducting on anion substitution on the Te site. The parent phase of Fe$_{1+x}$Te is sensitive to the amount of interstitial iron situated between the iron-tellurium layers displaying collinear magnetic order coexisting with low temperature metallic resistivity for small concentrations of interstitial iron $x$ and he…
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Fe$_{1+x}$Te is a two dimensional van der Waals antiferromagnet that becomes superconducting on anion substitution on the Te site. The parent phase of Fe$_{1+x}$Te is sensitive to the amount of interstitial iron situated between the iron-tellurium layers displaying collinear magnetic order coexisting with low temperature metallic resistivity for small concentrations of interstitial iron $x$ and helical magnetic order for large values of $x$. While this phase diagram has been established through scattering [see for example E. E. Rodriguez $\textit{et al.}$ Phys. Rev. B ${\bf{84}}$, 064403 (2011) and S. Rössler $\textit{et al.}$ Phys. Rev. B ${\bf{84}}$, 174506 (2011)], recent scanning tunnelling microscopy measurements [C. Trainer $\textit{et al.}$ Sci. Adv. ${\bf{5}}$, eaav3478 (2019)] have observed a different magnetic structure for small interstitial iron concentrations $x$ with a significant canting of the magnetic moments along the crystallographic $c$ axis of $θ$=28 $\pm$ 3$^{\circ}$. In this paper, we revisit the magnetic structure of Fe$_{1.09}$Te using spherical neutron polarimetry and scanning tunnelling microscopy to search for this canting in the bulk phase and compare surface and bulk magnetism. The results show that the bulk magnetic structure of Fe$_{1.09}$Te is consistent with collinear in-plane order ($θ=0$ with an error of $\sim$ 5$^{\circ}$). Comparison with scanning tunnelling microscopy on a series of Fe$_{1+x}$Te samples reveals that the surface exhibits a magnetic surface reconstruction with a canting angle of the spins of $θ=29.8^{\circ}$. We suggest that this is a consequence of structural relaxation of the surface layer resulting in an out-of-plane magnetocrystalline anisotropy. The magnetism in Fe$_{1+x}$Te displays different properties at the surface when the symmetry constraints of the bulk are removed.
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Submitted 3 January, 2021;
originally announced January 2021.
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Magnetic-Field Tunable Intertwined Checkerboard Charge Order and Nematicity in the Surface Layer of Sr$_2$RuO$_4$
Authors:
Carolina A. Marques,
Luke C. Rhodes,
Rosalba Fittipaldi,
Veronica Granata,
Chi Ming Yim,
Renato Buzio,
Andrea Gerbi,
Antonio Vecchione,
Andreas W. Rost,
Peter Wahl
Abstract:
In strongly correlated electron materials, the electronic, spin, and charge degrees of freedom are closely intertwined. This often leads to the stabilization of emergent orders that are highly sensitive to external physical stimuli promising opportunities for technological applications. In perovskite ruthenates, this sensitivity manifests in dramatic changes of the physical properties with subtle…
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In strongly correlated electron materials, the electronic, spin, and charge degrees of freedom are closely intertwined. This often leads to the stabilization of emergent orders that are highly sensitive to external physical stimuli promising opportunities for technological applications. In perovskite ruthenates, this sensitivity manifests in dramatic changes of the physical properties with subtle structural details of the RuO$_6$ octahedra, stabilizing enigmatic correlated ground states, from a hotly debated superconducting state via electronic nematicity and metamagnetic quantum criticality to ferromagnetism. Here, it is demonstrated that the rotation of the RuO$_6$ octahedra in the surface layer of Sr$_2$RuO$_4$ generates new emergent orders not observed in the bulk material. Through atomic-scale spectroscopic characterization of the low-energy electronic states, four van Hove singularities are identified in the vicinity of the Fermi energy. The singularities can be directly linked to intertwined nematic and checkerboard charge order. Tuning of one of these van Hove singularities by magnetic field is demonstrated, suggesting that the surface layer undergoes a Lifshitz transition at a magnetic field of ~32T. The results establish the surface layer of Sr$_2$RuO$_4$ as an exciting 2D correlated electron system and highlight the opportunities for engineering the low-energy electronic states in these systems.
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Submitted 24 May, 2023; v1 submitted 30 April, 2020;
originally announced May 2020.
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Electronic structure and superconductivity of the non-centrosymmetric Sn$_4$As$_3$
Authors:
C. A. Marques,
M. J. Neat,
C. M. Yim,
M. D. Watson,
L. C. Rhodes,
C. Heil,
K. S. Pervakov,
V. A. Vlasenko,
V. M. Pudalov,
A. V. Muratov,
T. K. Kim,
P. Wahl
Abstract:
In a superconductor that lacks inversion symmetry, the spatial part of the Cooper pair wave function has a reduced symmetry, allowing for the mixing of spin-singlet and spin-triplet Cooper pairing channels and thus providing a pathway to a non-trivial superconducting state. Materials with a non-centrosymmetric crystal structure and with strong spin-orbit coupling are a platform to realize these po…
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In a superconductor that lacks inversion symmetry, the spatial part of the Cooper pair wave function has a reduced symmetry, allowing for the mixing of spin-singlet and spin-triplet Cooper pairing channels and thus providing a pathway to a non-trivial superconducting state. Materials with a non-centrosymmetric crystal structure and with strong spin-orbit coupling are a platform to realize these possibilities. Here, we report the synthesis and characterisation of high quality crystals of Sn$_4$As$_3$, with non-centrosymmetric unit cell ($R3m$). We have characterised the normal and superconducting state using a range of methods. Angle-resolved photoemission spectroscopy shows a multiband Fermi surface and the presence of two surface states, confirmed by Density-functional theory calculations. Specific heat measurements reveal a superconducting critical temperature of $T_c\sim 1.14$ K and an upper critical magnetic field of $H_c\gtrsim 7$ mT, which are both confirmed by ultra-low temperature scanning tunneling microscopy and spectroscopy. Scanning tunneling spectroscopy shows a fully formed superconducting gap, consistent with conventional $s$-wave superconductivity.
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Submitted 29 June, 2020; v1 submitted 13 December, 2019;
originally announced December 2019.
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Few-Layer MoS$_2$/a-Si:H Heterojunction pin-Photodiodes for extended Infrared Detection
Authors:
Andreas Bablich,
Daniel S. Schneider,
Paul Kienitz,
Satender Kataria,
Stefan Wagner,
Chanyoung Yim,
Niall McEvoy,
Olof Engstrom,
Julian Müller,
Yilmaz Sakalli,
Benjamin Butz,
Georg S. Duesberg,
Peter Haring Bolívar,
Max C. Lemme
Abstract:
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top of large-scale synthesized and transferred homogeneous FL-MoS$_2$. This novel detector array exhibits long-term stability (more than six month) and outperforms…
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Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top of large-scale synthesized and transferred homogeneous FL-MoS$_2$. This novel detector array exhibits long-term stability (more than six month) and outperforms conventional silicon-based pin photodetectors in the infrared range (IR, $λ$ = 2120 nm) in terms of sensitivities by up to 50 mAW$^{-1}$. Photodetectivities of up to 2 x 10$^{10}$ Jones and external quantum efficiencies of 3 % are achieved. The detectors further feature the additional functionality of bias-dependent responsivity switching between the different spectral ranges. The realization of such scalable detector arrays is an essential step towards pixelated and wavelength-selective sensors operating in the IR spectral range.
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Submitted 22 July, 2019;
originally announced July 2019.
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Kinetic stabilization of 1D surface states near twin boundaries in noncentrosymmetric BiPd
Authors:
Chi Ming Yim,
Christopher Trainer,
Ana Maldonado,
Bernd Braunecker,
Alexander Yaresko,
Darren C. Peets,
Peter Wahl
Abstract:
The search for one-dimensional (1D) topologically-protected electronic states has become an important research goal for condensed matter physics owing to their potential use in spintronic devices or as a building block for topologically non-trivial electronic states. Using low temperature scanning tunneling microscopy, we demonstrate the formation of 1D electronic states at twin boundaries at the…
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The search for one-dimensional (1D) topologically-protected electronic states has become an important research goal for condensed matter physics owing to their potential use in spintronic devices or as a building block for topologically non-trivial electronic states. Using low temperature scanning tunneling microscopy, we demonstrate the formation of 1D electronic states at twin boundaries at the surface of the noncentrosymmetric material BiPd. These twin boundaries are topological defects which separate regions with antiparallel orientations of the crystallographic \textit{b} axis. We demonstrate that the formation of the 1D electronic states can be rationalized by a change in effective mass of two-dimensional surface states across the twin boundary. Our work therefore reveals a novel route towards designing 1D electronic states with strong spin-orbit coupling.
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Submitted 7 November, 2018;
originally announced November 2018.
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Highly sensitive electromechanical piezoresistive pressure sensors based on large-area layered PtSe$_{2}$ films
Authors:
Stefan Wagner,
Chanyoung Yim,
Niall McEvoy,
Satender Kataria,
Volkan Yokaribas,
Agnieszka Kuc,
Stephan Pindl,
Claus-Peter Fritzen,
Thomas Heine,
Georg S. Duesberg,
Max C. Lemme
Abstract:
Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe$_{2}$), an exciting and unexplored 2D transition metal dichalcogenides (TMD) material, is particularly interesting because its scalable and low temperature growth process is compatible with silicon technology. Here, we explore the poten…
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Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe$_{2}$), an exciting and unexplored 2D transition metal dichalcogenides (TMD) material, is particularly interesting because its scalable and low temperature growth process is compatible with silicon technology. Here, we explore the potential of thin PtSe$_{2}$ films as electromechanical piezoresistive sensors. All experiments have been conducted with semimetallic PtSe$_{2}$ films grown by thermally assisted conversion of Pt at a CMOS-compatible temperature of 400°C. We report high negative gauge factors of up to -84.8 obtained experimentally from PtSe$_{2}$ strain gauges in a bending cantilever beam setup. Integrated NEMS piezoresistive pressure sensors with freestanding PMMA/PtSe$_{2}$ membranes confirm the negative gauge factor and exhibit very high sensitivity, outperforming previously reported values by orders of magnitude. We employ density functional theory (DFT) calculations to understand the origin of the measured negative gauge factor. Our results suggest PtSe$_{2}$ as a very promising candidate for future NEMS applications, including integration into CMOS production lines.
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Submitted 19 March, 2018;
originally announced March 2018.
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Manipulating surface magnetic order in iron telluride
Authors:
Christopher Trainer,
Chi Ming Yim,
Christoph Heil,
Feliciano Giustino,
Dorina Croitori,
Vladimir Tsurkan,
Alois Loidl,
Efrain Rodriguez,
Chris Stock,
Peter Wahl
Abstract:
Control of emergent magnetic orders in correlated electron materials promises new opportunities for applications in spintronics. For their technological exploitation, it is important to understand the role of surfaces and interfaces to other materials and their impact on the emergent magnetic orders. Here, we demonstrate for iron telluride, the nonsuperconducting parent compound of the iron chalco…
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Control of emergent magnetic orders in correlated electron materials promises new opportunities for applications in spintronics. For their technological exploitation, it is important to understand the role of surfaces and interfaces to other materials and their impact on the emergent magnetic orders. Here, we demonstrate for iron telluride, the nonsuperconducting parent compound of the iron chalcogenide superconductors, determination and manipulation of the surface magnetic structure by low-temperature spin-polarized scanning tunneling microscopy. Iron telluride exhibits a complex structural and magnetic phase diagram as a function of interstitial iron concentration. Several theories have been put forward to explain the different magnetic orders observed in the phase diagram, which ascribe a dominant role either to interactions mediated by itinerant electrons or to local moment interactions. Through the controlled removal of surface excess iron, we can separate the influence of the excess iron from that of the change in the lattice structure.
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Submitted 4 March, 2019; v1 submitted 16 February, 2018;
originally announced February 2018.
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Discovery of a strain-stabilised smectic electronic order in LiFeAs
Authors:
Chi Ming Yim,
Christopher Trainer,
Ramakrishna Aluru,
Shun Chi,
Walter N. Hardy,
Ruixing Liang,
Doug Bonn,
Peter Wahl
Abstract:
In many high temperature superconductors, small orthorhombic distortions of the lattice structure result in surprisingly large symmetry breaking of the electronic states and macroscopic properties, an effect often referred to as nematicity. To directly study the impact of symmetry-breaking lattice distortions on the electronic states, using low-temperature scanning tunnelling microscopy we image a…
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In many high temperature superconductors, small orthorhombic distortions of the lattice structure result in surprisingly large symmetry breaking of the electronic states and macroscopic properties, an effect often referred to as nematicity. To directly study the impact of symmetry-breaking lattice distortions on the electronic states, using low-temperature scanning tunnelling microscopy we image at the atomic scale the influence of strain-tuned lattice distortions on the correlated electronic states in the iron-based superconductor LiFeAs, a material which in its ground state is tetragonal, with four-fold ($C_4$) symmetry. Our experiments uncover a new strain-stabilised modulated phase which exhibits a smectic order in LiFeAs, an electronic state which not only breaks rotational symmetry but also reduces translational symmetry. We follow the evolution of the superconducting gap from the unstrained material with $C_4$ symmetry through the new nematic phase with two-fold ($C_2$) symmetry and charge-density-wave order to a state where superconductivity is completely suppressed.
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Submitted 5 July, 2018; v1 submitted 14 February, 2018;
originally announced February 2018.
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Electrical characterization of structured platinum diselenide devices
Authors:
Chanyoung Yim,
Vikram Passi,
Max C. Lemme,
Georg S. Duesberg,
Cormac Ó Coileáin Emiliano Pallechi,
Dalal Fadil,
Niall McEvoy
Abstract:
Platinum diselenide (PtSe2) is an exciting new member of the two-dimensional (2D) transition metal dichalcogenide (TMD) family. it has a semimetal to semiconductor transition when approaching monolayer thickness and has already shown significant potential for use in device applications. Notably, PtSe2 can be grown at low temperature making it potentially suitable for industrial usage. Here, we add…
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Platinum diselenide (PtSe2) is an exciting new member of the two-dimensional (2D) transition metal dichalcogenide (TMD) family. it has a semimetal to semiconductor transition when approaching monolayer thickness and has already shown significant potential for use in device applications. Notably, PtSe2 can be grown at low temperature making it potentially suitable for industrial usage. Here, we address thickness dependent transport properties and investigate electrical contacts to PtSe2, a crucial and universal element of TMD-based electronic devices. PtSe2 films have been synthesized at various thicknesses and structured to allow contact engineering and the accurate extraction of electrical properties. Contact resistivity and sheet resistance extracted from transmission line method (TLM) measurements are compared for different contact metals and different PtSe2 film thicknesses. Furthermore, the transition from semimetal to semiconductor in PtSe2 has been indirectly verified by electrical characterization of field-effect devices. Finally, the influence of edge contacts at the metal - PtSe2 interface has been studied by nanostructuring the contact area using electron beam lithography. By increasing the edge contact length, the contact resistivity was improved by up to 70% compared to devices with conventional top contacts. The results presented here represent crucial steps towards realizing high-performance nanoelectronic devices based on group-10 TMDs.
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Submitted 21 July, 2017;
originally announced July 2017.
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Correct Brillouin zone and electronic structure of BiPd
Authors:
Alexander Yaresko,
Andreas P. Schnyder,
Hadj M. Benia,
Chi-Ming Yim,
Giorgio Levy,
Andrea Damascelli,
Christian R. Ast,
Darren C. Peets,
Peter Wahl
Abstract:
A promising route to the realization of Majorana fermions is in non-centrosymmetric superconductors, in which spin-orbit-coupling lifts the spin degeneracy of both bulk and surface bands. A detailed assessment of the electronic structure is critical to evaluate their suitability for this through establishing the topological properties of the electronic structure. This requires correct identificati…
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A promising route to the realization of Majorana fermions is in non-centrosymmetric superconductors, in which spin-orbit-coupling lifts the spin degeneracy of both bulk and surface bands. A detailed assessment of the electronic structure is critical to evaluate their suitability for this through establishing the topological properties of the electronic structure. This requires correct identification of the time-reversal-invariant momenta. One such material is BiPd, a recently rediscovered non-centrosymmetric superconductor which can be grown in large, high-quality single crystals and has been studied by several groups using angular resolved photoemission to establish its surface electronic structure. Many of the published electronic structure studies on this material are based on a reciprocal unit cell which is not the actual Brillouin zone of the material. We show here the consequences of this for the electronic structures and show how the inferred topological nature of the material is affected.
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Submitted 23 January, 2018; v1 submitted 10 April, 2017;
originally announced April 2017.
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Structure of a model TiO2 photocatalytic interface
Authors:
H. Hussain,
G. Tocci,
T. Woolcot,
X. Torrelles,
C. L. Pang,
D. S. Humphrey,
C. M. Yim,
D. C. Grinter,
G. Cabailh,
O. Bikondoa,
R. Lindsay,
J. Zegenhagen,
A. Michaelides,
G. Thornton
Abstract:
The interaction of water with TiO2 is crucial to many of its practical applications, including photocatalytic water splitting. Following the first demonstration of this phenomenon 40 years ago there have been numerous studies of the rutile single-crystal TiO2(110) interface with water. This has provided an atomic-level understanding of the water-TiO2 interaction. However, nearly all of the previou…
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The interaction of water with TiO2 is crucial to many of its practical applications, including photocatalytic water splitting. Following the first demonstration of this phenomenon 40 years ago there have been numerous studies of the rutile single-crystal TiO2(110) interface with water. This has provided an atomic-level understanding of the water-TiO2 interaction. However, nearly all of the previous studies of water/TiO2 interfaces involve water in the vapour phase. Here, we explore the interfacial structure between liquid water and a rutile TiO2(110) surface pre-characterized at the atomic level. Scanning tunnelling microscopy and surface X-ray diffraction are used to determine the structure, which is comprised of an ordered array of hydroxyl molecules with molecular water in the second layer. Static and dynamic density functional theory calculations suggest that a possible mechanism for formation of the hydroxyl overlayer involves the mixed adsorption of O2 and H2O on a partially defected surface. The quantitative structural properties derived here provide a basis with which to explore the atomistic properties and hence mechanisms involved in TiO2 photocatalysis.
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Submitted 18 November, 2016;
originally announced November 2016.
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Observation of Dirac surface states in the noncentrosymmetric superconductor BiPd
Authors:
H. M. Benia,
E. Rampi,
C. Trainer,
C. M. Yim,
A. Maldonado,
D. C. Peets,
A. Stoehr,
U. Starke,
K. Kern,
A. Yaresko,
G. Levy,
A. Damascelli,
C. R. Ast,
A. P. Schnyder,
P. Wahl
Abstract:
Materials with strong spin-orbit coupling (SOC) have in recent years become a subject of intense research due to their potential applications in spintronics and quantum information technology. In particular, in systems which break inversion symmetry, SOC facilitates the Rashba-Dresselhaus effect, leading to a lifting of spin degeneracy in the bulk and intricate spin textures of the Bloch wave func…
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Materials with strong spin-orbit coupling (SOC) have in recent years become a subject of intense research due to their potential applications in spintronics and quantum information technology. In particular, in systems which break inversion symmetry, SOC facilitates the Rashba-Dresselhaus effect, leading to a lifting of spin degeneracy in the bulk and intricate spin textures of the Bloch wave functions. Here, by combining angular resolved photoemission (ARPES) and low temperature scanning tunneling microscopy (STM) measurements with relativistic first-principles band structure calculations, we examine the role of SOC in single crystals of noncentrosymmetric BiPd. We report the detection of several Dirac surface states, one of which exhibits an extremely large spin splitting. Unlike the surface states in inversion-symmetric systems, the Dirac surface states of BiPd have completely different properties at opposite faces of the crystal and are not trivially linked by symmetry. The spin-splitting of the surface states exhibits a strong anisotropy by itself, which can be linked to the low in-plane symmetry of the surface termination.
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Submitted 3 August, 2016;
originally announced August 2016.
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High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature
Authors:
Chanyoung Yim,
Kangho Lee,
Niall McEvoy,
Maria O Brien,
Sarah Riazimehr,
Nina C. Berner,
Conor P. Cullen,
Jani Kotakoski,
Jannik C. Meyer,
Max C. Lemme,
Georg S. Duesberg
Abstract:
Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe2), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermal assisted conversion is performed at 400 °C, representing a breakthrough for the direct integr…
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Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe2), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermal assisted conversion is performed at 400 °C, representing a breakthrough for the direct integration of this novel material with silicon (Si) technology. Besides the thorough characterization of this new 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically-stacked heterostructures of PtSe2 on Si which act as both photodiodes and photovoltaic cells. Thus this study establishes PtSe2 as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies.
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Submitted 28 September, 2016; v1 submitted 28 June, 2016;
originally announced June 2016.
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Raman Characterization of Platinum Diselenide Thin Films
Authors:
Maria O'Brien,
Niall McEvoy,
Carlo Motta,
Jian-Yao Zheng,
Nina C. Berner,
Jani Kotakoski,
Kenan Elibol,
Timothy J. Pennycook,
Jannik C. Meyer,
Chanyoung Yim,
Mohamed Abid,
Toby Hallam,
John F. Donegan,
Stefano Sanvito,
Georg S. Duesberg
Abstract:
Platinum diselenide (PtSe2) is a newly discovered 2D material which is of great interest for applications in electronics and catalysis. PtSe2 films were synthesized by thermally-assisted selenization of predeposited platinum films and scanning transmission electron microscopy revealed the crystal structure of these films to be 1T. Raman scattering of these films was studied as a function of film t…
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Platinum diselenide (PtSe2) is a newly discovered 2D material which is of great interest for applications in electronics and catalysis. PtSe2 films were synthesized by thermally-assisted selenization of predeposited platinum films and scanning transmission electron microscopy revealed the crystal structure of these films to be 1T. Raman scattering of these films was studied as a function of film thickness, laser wavelength and laser polarization. Eg and A1g Raman active modes were identified using polarization measurements in the Raman setup. These modes were found to display a clear position and intensity dependence with film thickness, for multiple excitation wavelengths, and their peak positions agree with simulated phonon dispersion curves for PtSe2. These results highlight the practicality of using Raman spectroscopy as a prime characterization technique for newly-synthesized 2D materials.
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Submitted 31 December, 2015;
originally announced December 2015.
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Spectral Sensitivity of Graphene/Silicon Heterojunction Photodetectors
Authors:
Sarah Riazimehr,
Andreas Bablich,
Daniel Schneider,
Satender Kataria,
Vikram Passi,
Chanyoung Yim,
Georg S. Duesberg,
Max C. Lemme
Abstract:
We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from the diodes fabricated on n- Si substrates in comparison with the devices on p-Si substrates in dark condition. Also, graphene/n-Si photodiodes show a considera…
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We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from the diodes fabricated on n- Si substrates in comparison with the devices on p-Si substrates in dark condition. Also, graphene/n-Si photodiodes show a considerable responsivity of 270 mA/W within the silicon spectral range in DC reverse bias condition. The present results are furthermore compared with that of a molybdenum disulfide (MoS2)/p-type silicon photodiodes.
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Submitted 3 September, 2015;
originally announced September 2015.
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Understanding and optimising the packing density of perylene bisimide layers on CVD-grown graphene
Authors:
Nina C. Berner,
Sinéad Winters,
Claudia Backes,
Chanyoung Yim,
Kim C. Dümbgen,
Izabela Kaminska,
Sebastian Mackowski,
Attilio A. Cafolla,
Andreas Hirsch,
Georg S. Duesberg
Abstract:
The non-covalent functionalisation of graphene is an attractive strategy to alter the surface chemistry of graphene without damaging its superior electrical and mechanical properties. Using the facile method of aqueous-phase functionalisation on large-scale CVD-grown graphene, we investigated the formation of different packing densities in self-assembled monolayers (SAMs) of perylene bisimide deri…
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The non-covalent functionalisation of graphene is an attractive strategy to alter the surface chemistry of graphene without damaging its superior electrical and mechanical properties. Using the facile method of aqueous-phase functionalisation on large-scale CVD-grown graphene, we investigated the formation of different packing densities in self-assembled monolayers (SAMs) of perylene bisimide derivatives and related this to the amount of substrate contamination. We were able to directly observe wet-chemically deposited SAMs in scanning tunnelling microscopy (STM) on transferred CVD graphene and revealed that the densely packed perylene ad-layers adsorb with the conjugated π-system of the core perpendicular to the graphene substrate. This elucidation of the non-covalent functionalisation of graphene has major implications on controlling its surface chemistry and opens new pathways for adaptable functionalisation in ambient conditions and on the large scale.
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Submitted 16 July, 2015;
originally announced July 2015.
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Direct Observationof DegenerateTwo-Photon Absorption and Its Saturation in WS2 and MoS2 Monolayer and Few-Layer Films
Authors:
Saifeng Zhang,
Ningning Dong,
Niall McEvoy,
Maria O'Brien,
Sinéad Winters,
Nina C. Berner,
Chanyoung Yim,
Yuanxin Li,
Xiaoyan Zhang,
Zhanghai Chen,
Long Zhang,
Georg S. Duesberg,
Jun Wang
Abstract:
The optical nonlinearity of WS2, MoS2 monolayer and few-layer films was investigated using the Z-scan technique with femtosecond pulses from the visible to the near infrared. The dependence of nonlinear absorption of the WS2 and MoS2 films on layer number and excitation wavelength was studied systematically. WS2 with 1~3 layers exhibits a giant two-photon absorption (TPA) coefficient. Saturation o…
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The optical nonlinearity of WS2, MoS2 monolayer and few-layer films was investigated using the Z-scan technique with femtosecond pulses from the visible to the near infrared. The dependence of nonlinear absorption of the WS2 and MoS2 films on layer number and excitation wavelength was studied systematically. WS2 with 1~3 layers exhibits a giant two-photon absorption (TPA) coefficient. Saturation of TPA for WS2 with 1~3 layers and MoS2 with 25~27 layers was observed. The giant nonlinearity of WS2 and MoS2 is attributed to two dimensional confinement, a giant exciton effect and the band edge resonance of TPA.
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Submitted 9 October, 2015; v1 submitted 8 March, 2015;
originally announced March 2015.
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Heterojunction Hybrid Devices from Vapor Phase Grown MoS$_{2}$
Authors:
Chanyoung Yim,
Maria O`Brien,
Niall McEvoy,
Sarah Riazimehr,
Heiko Schäfer-Eberwein,
Andreas Bablich,
Ravinder Pawar,
Giuseppe Iannaccone,
Clive Downing,
Gianluca Fiori,
Max C. Lemme,
Georg S. Duesberg
Abstract:
We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS$_{2}$) layer transferred onto p-type silicon. The fabrication is scalable as the MoS$_{2}$ is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thicknes…
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We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS$_{2}$) layer transferred onto p-type silicon. The fabrication is scalable as the MoS$_{2}$ is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS$_{2}$ layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS$_{2}$. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering.
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Submitted 1 July, 2014;
originally announced July 2014.
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Structure and Properties of α-NaFeO2-type Ternary Sodium Iridates
Authors:
Kristen Baroudi,
Cindi Yim,
Hui Wu,
Qingzhen Huang,
John H. Roudebush,
Eugenia Vavilova,
Hans-Joachim Grafe,
Vladislav Kataev,
Bernd Buechner,
Huiwen Ji,
Changyang Kuo,
Zhiwei Hu,
Tun-Wen Pi,
Chiwen Pao,
Jyhfu Lee,
Daria Mikhailova,
Liu Hao Tjeng,
R. J. Cava
Abstract:
The synthesis, structure, and elementary magnetic and electronic properties are reported for layered compounds of the type Na3-xMIr2O6 and Na3-xM2IrO6, where M is a transition metal from the 3d series (M=Zn, Cu, Ni, Co, Fe and Mn). The rhombohedral structures, in space group R-3m, were determined by refinement of neutron and synchrotron powder diffraction data. No clear evidence for long range 2:1…
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The synthesis, structure, and elementary magnetic and electronic properties are reported for layered compounds of the type Na3-xMIr2O6 and Na3-xM2IrO6, where M is a transition metal from the 3d series (M=Zn, Cu, Ni, Co, Fe and Mn). The rhombohedral structures, in space group R-3m, were determined by refinement of neutron and synchrotron powder diffraction data. No clear evidence for long range 2:1 or 1:2 honeycomb-like M/Ir ordering was found in the neutron powder diffraction patterns except in the case of M = Zn, thus in general the compounds are best designated as sodium deficient α-NaFeO2-type phases with formulas Na1-xM1/3Ir2/3O2 or Na1-xM2/3Ir1/3O2. Synchrotron powder diffraction patterns indicate that several of the compounds likely have honeycomb in-plane metal-iridium ordering with disordered stacking of the layers. All the compounds are sodium deficient under our synthetic conditions and are black and insulating. Weiss constants derived from magnetic susceptibility measurements indicate that Na0.62Mn0.61Ir0.39O2, Na0.80Fe2/3Ir1/3O2, Na0.92Ni1/3Ir2/3O2, Na0.86Cu1/3Ir2/3O2, and Na0.89Zn1/3Ir2/3O2 display dominant antiferromagnetic interactions. For Na0.90Co1/3Ir2/3O2 the dominant magnetic interactions at low temperature are ferromagnetic while at high temperatures they are antiferromagnetic; there is also a change in the effective moment. Low temperature specific heat measurements (to 2 K) on Na0.92Ni1/3Ir2/3O2 indicate the presence of a broad magnetic ordering transition. X-ray absorption spectroscopy shows that iridium is at or close to the 4+ oxidation state in all compounds. 23Na nuclear magnetic resonance measurements comparing Na2IrO3 to Na0.92Ni1/3Ir2/3O2 and Na0.89Zn1/3Ir2/3O2 provide strong indications that the electron spins are short-range ordered in the latter two materials. All of the compounds are spin glasses.
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Submitted 3 December, 2013;
originally announced December 2013.
