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Microscopic Origin of Chiral Charge Density Wave in TiSe2
Authors:
Hyeonjung Kim,
Kyung-Hwan **,
Han Woong Yeom
Abstract:
Chiral charge density wave (CDW) is widely observed in low dimensional systems to be entangled with various emerging phases but its microscopic origin has been elusive. We reinvestigate the representative but debated chiral CDW of TiSe$_{2}$ using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. Our STM data reveal unambiguously the chiral distortion of the top…
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Chiral charge density wave (CDW) is widely observed in low dimensional systems to be entangled with various emerging phases but its microscopic origin has been elusive. We reinvestigate the representative but debated chiral CDW of TiSe$_{2}$ using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. Our STM data reveal unambiguously the chiral distortion of the topmost Se layer in domains of opposite chirality, which are interfaced with a novel domain wall. DFT calculations find the atomic structure of the chiral CDW, which has a $C2$ symmetry with the inversion and reflection symmetry broken. The chirality is determined by the helicity of Se-Ti bond distortions and their translation between neighboring layers. The present structure reproduces well the STM images with lower energy than the prevailing non-chiral $P\bar{3}c1$ structure model. Our result provides the atomistic understanding of the CDW chirality in TiSe$_{2}$, which can be referred to in a wide class of monolayer and layered materials with CDW.
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Submitted 3 January, 2024;
originally announced January 2024.
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Emergent Quantum Phenomena of Noncentrosymmetric Charge-Density Wave in 1T-Transition Metal Dichalcogenides
Authors:
Cheong-Eung Ahn,
Kyung-Hwan **,
Young-Jae Choi,
Jae Whan Park,
Han Woong Yeom,
Ara Go,
Yong Baek Kim,
Gil Young Cho
Abstract:
1T-transition metal dichalcogenides (TMD) have been an exciting platform for exploring the intertwinement of charge density waves and strong correlation phenomena. While the David star structure has been conventionally considered as the underlying charge order in the literature, recent scanning tunneling probe experiments on several monolayer 1T-TMD materials have motivated a new, alternative stru…
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1T-transition metal dichalcogenides (TMD) have been an exciting platform for exploring the intertwinement of charge density waves and strong correlation phenomena. While the David star structure has been conventionally considered as the underlying charge order in the literature, recent scanning tunneling probe experiments on several monolayer 1T-TMD materials have motivated a new, alternative structure, namely the anion-centered David star structure. In this Letter, we show that this novel anion-centered David star structure manifestly breaks inversion symmetry, resulting in flat bands with pronounced Rashba spin-orbit couplings. These distinctive features unlock novel possibilities and functionalities for 1T-TMDs, including the giant spin Hall effect, the emergence of Chern bands, and spin liquid that spontaneously breaks crystalline rotational symmetry. Our findings establish promising avenues for exploring emerging quantum phenomena of monolayer 1T-TMDs with this novel noncentrosymmetric structure.
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Submitted 14 June, 2024; v1 submitted 27 September, 2023;
originally announced September 2023.
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Kinkless electronic junction along one dimensional electronic channel
Authors:
Qirong Yao,
Jae Whan Park,
Choongjae Won,
Sang-Wook Cheong,
Han Woong Yeom
Abstract:
Here we report the formation of type-A and type-B electronic junctions without any structural discontinuity along a well-defined 1-nm-wide one-dimensional electronic channel within a van der Waals layer. We employ scanning tunneling microscopy and spectroscopy techniques to investigate the atomic and electronic structure along peculiar domain walls formed on the charge-density-wave phase of 1T-TaS…
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Here we report the formation of type-A and type-B electronic junctions without any structural discontinuity along a well-defined 1-nm-wide one-dimensional electronic channel within a van der Waals layer. We employ scanning tunneling microscopy and spectroscopy techniques to investigate the atomic and electronic structure along peculiar domain walls formed on the charge-density-wave phase of 1T-TaS2. We find distinct kinds of abrupt electronic junctions with discontinuities of the band gap along the domain walls, which do not have any structural kinks and defects. Our density-functional calculations reveal a novel mechanism of the electronic junction formation; they are formed by a kinked domain wall in the layer underneath through substantial electronic interlayer coupling. This work demonstrates that the interlayer electronic coupling can be an effective control knob over several-nanometer-scale electronic property of two-dimensional atomic monolayers.
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Submitted 4 September, 2023;
originally announced September 2023.
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Robust Luttinger liquid state of 1D Dirac fermions in a van der Waals system Nb$_9$Si$_4$Te$_{18}$
Authors:
Qirong Yao,
Hyun** Jung,
Kijeong Kong,
Chandan De,
Jaeyoung Kim,
Jonathan D. Denlinger,
Han Woong Yeom
Abstract:
We report on the Tomonaga-Luttinger liquid (TLL) behavior in fully degenerate 1D Dirac fermions. A ternary van der Waals material Nb$_9$Si$_4$Te$_{18}$ incorporates in-plane NbTe$_2$ chains, which produce a 1D Dirac band crossing Fermi energy. Tunneling conductance of electrons confined within NbTe2 chains is found to be substantially suppressed at Fermi energy, which follows a power law with a un…
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We report on the Tomonaga-Luttinger liquid (TLL) behavior in fully degenerate 1D Dirac fermions. A ternary van der Waals material Nb$_9$Si$_4$Te$_{18}$ incorporates in-plane NbTe$_2$ chains, which produce a 1D Dirac band crossing Fermi energy. Tunneling conductance of electrons confined within NbTe2 chains is found to be substantially suppressed at Fermi energy, which follows a power law with a universal temperature scaling, hallmarking a TLL state. The obtained Luttinger parameter of ~0.15 indicates strong electron-electron interaction. The TLL behavior is found to be robust against atomic-scale defects, which might be related to the Dirac electron nature. These findings, as combined with the tunability of the compound and the merit of a van der Waals material, offer a robust, tunable, and integrable platform to exploit non-Fermi liquid physics.
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Submitted 25 August, 2023;
originally announced August 2023.
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Topological soliton molecule in quasi 1D charge density wave
Authors:
Taehwan Im,
Sun Kyu Song,
Jae Whan Park,
Han Woong Yeom
Abstract:
Soliton molecules, bound states of two solitons, can be important for the informatics using solitons and the quest for exotic particles in a wide range of physical systems from unconventional superconductors to nuclear matter and Higgs field, but have been observed only in temporal dimension for classical wave optical systems. Here, we identify a topological soliton molecule formed spatially in an…
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Soliton molecules, bound states of two solitons, can be important for the informatics using solitons and the quest for exotic particles in a wide range of physical systems from unconventional superconductors to nuclear matter and Higgs field, but have been observed only in temporal dimension for classical wave optical systems. Here, we identify a topological soliton molecule formed spatially in an electronic system, a quasi 1D charge density wave of indium atomic wires. This system is composed of two coupled Peierls chains, which are endowed with a Z$_4$ topology and three distinct, right-chiral, left-chiral, and non-chiral, solitons. Our scanning tunneling microscopy measurements identify a bound state of right- and left-chiral solitons with distinct in-gap states and net zero phase shift. Our density functional theory calculations reveal the attractive interaction of these solitons and the hybridization of their electronic states. This result initiates the study of the interaction between solitons in electronic systems, which can provide novel manybody electronic states and extra data-handling capacity beyond the given soliton topology.
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Submitted 10 August, 2023;
originally announced August 2023.
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Atomic-Scale Tailoring of Chemisorbed Atomic Oxygen on Epitaxial Graphene for Graphene-Based Electronic Devices
Authors:
Tae Soo Kim,
Taemin Ahn,
Tae-Hwan Kim,
Hee Cheul Choi,
Han Woong Yeom
Abstract:
Graphene, with its unique band structure, mechanical stability, and high charge mobility, holds great promise for next-generation electronics. Nevertheless, its zero band gap challenges the control of current flow through electrical gating, consequently limiting its practical applications. Recent research indicates that atomic oxygen can oxidize epitaxial graphene in a vacuum without causing unwan…
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Graphene, with its unique band structure, mechanical stability, and high charge mobility, holds great promise for next-generation electronics. Nevertheless, its zero band gap challenges the control of current flow through electrical gating, consequently limiting its practical applications. Recent research indicates that atomic oxygen can oxidize epitaxial graphene in a vacuum without causing unwanted damage. In this study, we have investigated the effects of chemisorbed atomic oxygen on the electronic properties of epitaxial graphene, using scanning tunneling microscopy (STM). Our findings reveal that oxygen atoms effectively modify the electronic states of graphene, resulting in a band gap at its Dirac point. Furthermore, we demonstrate that it is possible to selectively induce desorption or hop** of oxygen atoms with atomic precision by applying appropriate bias sweeps with an STM tip. These results suggest the potential for atomic-scale tailoring of graphene oxide, enabling the development of graphene-based atomic-scale electronic devices.
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Submitted 26 June, 2023;
originally announced June 2023.
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Mobile Kink Solitons in a Van der Waals Charge-Density-Wave Layer
Authors:
**won Lee,
Jae Whan Park,
Gil-Young Cho,
Han Woong Yeom
Abstract:
Kinks, point-like geometrical defects along dislocations, domain walls, and DNA, are stable and mobile, as solutions of a sine-Gordon wave equation. While they are widely investigated for crystal deformations and domain wall motions, electronic properties of individual kinks have received little attention. In this work, electronically and topologically distinct kinks are discovered along electroni…
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Kinks, point-like geometrical defects along dislocations, domain walls, and DNA, are stable and mobile, as solutions of a sine-Gordon wave equation. While they are widely investigated for crystal deformations and domain wall motions, electronic properties of individual kinks have received little attention. In this work, electronically and topologically distinct kinks are discovered along electronic domain walls in a correlated van der Waals insulator of 1$T$-TaS$_2$. Mobile kinks and antikinks are identified as trapped by pinning defects and imaged in scanning tunneling microscopy. Their atomic structures and in-gap electronic states are unveiled, which are mapped approximately into Su-Schrieffer-Heeger solitons. The twelve-fold degeneracy of the domain walls in the present system guarantees an extraordinarily large number of distinct kinks and antikinks to emerge. Such large degeneracy together with the robust geometrical nature may be useful for handling multilevel information in van der Waals materials architectures.
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Submitted 6 April, 2023;
originally announced April 2023.
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Realizing a Superconducting Square-Lattice Bismuth Monolayer
Authors:
Eunseok Oh,
Kyung-Hwan **,
Han Woong Yeom
Abstract:
Interplay of crystal symmetry, strong spin$-$orbit coupling (SOC), and many-body interactions in low dimensional materials provides a fertile ground for the discovery of unconventional electronic and magnetic properties and versatile functionalities. Two-dimensional (2D) allotropes of group 15 elements are appealing due to their structures and controllability over symmetries and topology under str…
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Interplay of crystal symmetry, strong spin$-$orbit coupling (SOC), and many-body interactions in low dimensional materials provides a fertile ground for the discovery of unconventional electronic and magnetic properties and versatile functionalities. Two-dimensional (2D) allotropes of group 15 elements are appealing due to their structures and controllability over symmetries and topology under strong SOC. Here, we report the heteroepitaxial growth of a proximity-induced superconducting 2D square-lattice bismuth monolayer on superconducting Pb films. The square lattice of monolayer bismuth films in a $C_4$ symmetry together with a stripey moiré structure is clearly resolved by our scanning tunneling microscopy and its atomic structure is revealed by density functional theory (DFT) calculations. A Rashba-type spin-split Dirac band is predicted by DFT calculations to exist at the Fermi level and becomes superconducting through the proximity effect from the Pb substrate. We suggest the possibility of a topological superconducting state in this system with magnetic dopants/field. This work introduces an intriguing material platform with 2D Dirac bands, strong SOC, topological superconductivity, and the moiré superstructure.
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Submitted 5 April, 2023;
originally announced April 2023.
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Z3 Charge Density Wave of Silicon Atomic Chains on a Vicinal Silicon Surface
Authors:
Euihwan Do,
Jae Whan Park,
Oleksandr Stetsovych,
Pavel Jelinek,
Han Woong Yeom
Abstract:
An ideal one-dimensional electronic system is formed along atomic chains on Au-decorated vicinal silicon surfaces but the nature of its low temperature phases has been puzzled for last two decades. Here, we unambiguously identify the low temperature structural distortion of this surface using high resolution atomic force microscopy and scanning tunneling microscopy. The most important structural i…
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An ideal one-dimensional electronic system is formed along atomic chains on Au-decorated vicinal silicon surfaces but the nature of its low temperature phases has been puzzled for last two decades. Here, we unambiguously identify the low temperature structural distortion of this surface using high resolution atomic force microscopy and scanning tunneling microscopy. The most important structural ingredient of this surface, the step-edge Si chains are found to be strongly buckled, every third atoms down, forming trimer unitcells. This observation is consistent with the recent model of rehybridized dangling bonds and rules out the antiferromagnetic spin ordering proposed earlier. The spectroscopy and electronic structure calculation indicate a charge density wave insulator with a Z3 topology making it possible to exploit topological phases and excitations. Tunneling current was found to substantially lower the energy barrier between three degenerate CDW states, which induces a dynamically fluctuating CDW at very low temperature.
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Submitted 13 April, 2022;
originally announced April 2022.
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Creation and annihilation of mobile fractional solitons in atomic chains
Authors:
Jae Whan Park,
Eui Hwan Do,
** Sung Shin,
Sun Kyu Song,
Oleksandr Stetsovych,
Pavel Jelinek,
Han Woong Yeom
Abstract:
Localized modes in one dimensional topological systems, such as Majonara modes in topological superconductors, are promising platforms for robust information processing. In one dimensional topological insulators, mobile topological solitons are expected but have not been fully realized yet. We discover fractionalized phase defects moving along trimer silicon atomic chains formed along step edges o…
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Localized modes in one dimensional topological systems, such as Majonara modes in topological superconductors, are promising platforms for robust information processing. In one dimensional topological insulators, mobile topological solitons are expected but have not been fully realized yet. We discover fractionalized phase defects moving along trimer silicon atomic chains formed along step edges of a vicinal silicon surface. Tunneling microscopy identifies local defects with phase shifts of 2π/3 and 4π/3 with their electronic states within the band gap and with their motions activated above 100 K. Theoretical calculations reveal the topological soliton origin of the phase defects with fractional charges of {\pm}2e/3 and {\pm}4e/3. An individual soliton can be created and annihilated at a desired location by current pulse from the probe tip. Mobile and manipulatable topological solitons discovered here provide a new platform of robustly-protected informatics with extraordinary functionalities.
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Submitted 21 October, 2021;
originally announced October 2021.
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Atomistic origin of metal versus charge-density-wave phase separation in indium atomic wires on Si(111)
Authors:
Sun kyu Song,
Han Woong Yeom
Abstract:
We investigate in atomic scale the electronic phase separation occurring in the well known quasi 1D charge-density wave (CDW) phase of the In atomic wire array on a Si(111) surface. The characteristic atomic scale defects, originated from excess In atoms, are found to be actively involved in the formation of the phase boundary between the metallic and the CDW phases by extensive analysis of scanni…
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We investigate in atomic scale the electronic phase separation occurring in the well known quasi 1D charge-density wave (CDW) phase of the In atomic wire array on a Si(111) surface. The characteristic atomic scale defects, originated from excess In atoms, are found to be actively involved in the formation of the phase boundary between the metallic and the CDW phases by extensive analysis of scanning tunneling microscopy images at various temperatures. These particular defects flip the phase of the quasi 1D CDW to impose strong local constraints in the CDW correlation. We show that such local constraints and the substantial interwire CDW interaction induce local condensates of CDW and the phase separation between the metallic and the CDW phases. This work unveils the atomistic origin of the electronic phase separation, highlighting the importance of atomic scale structures of defects and their collective interaction in electronically inhomogeneous materials.
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Submitted 7 June, 2021;
originally announced June 2021.
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Detecting photoelectrons from spontaneously formed excitons
Authors:
Keisuke Fukutani,
Roland Stania,
Chang Il Kwon,
Jun Sung Kim,
Ki Jeong Kong,
Jaeyoung Kim,
Han Woong Yeom
Abstract:
Excitons, quasiparticles of electrons and holes bound by Coulombic attraction, are created transiently by light and play an important role in optoelectronics, photovoltaics and photosynthesis. While they are also predicted to form spontaneously in a small gap semiconductor or a semimetal, leading to a Bose-Einstein condensate at low temperature, their material realization has been elusive without…
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Excitons, quasiparticles of electrons and holes bound by Coulombic attraction, are created transiently by light and play an important role in optoelectronics, photovoltaics and photosynthesis. While they are also predicted to form spontaneously in a small gap semiconductor or a semimetal, leading to a Bose-Einstein condensate at low temperature, their material realization has been elusive without any direct evidence. Here we detect the direct photoemission signal from spontaneously formed excitons in a debated excitonic insulator candidate Ta2NiSe5. Our symmetry-selective angle-resolved photoemission spectroscopy reveals a characteristic excitonic feature above the transition temperature, which provides detailed properties of excitons such as anisotropic Bohr radius. The present result evidences so called preformed excitons and guarantees the excitonic insulator nature of Ta2NiSe5 at low temperature. Direct photoemission can be an important tool to characterize steady-state excitons.
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Submitted 24 May, 2021;
originally announced May 2021.
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Distinguishing a Mott Insulator from a Trivial Insulator with Atomic Adsorbates
Authors:
**won Lee,
Kyung-Hwan **,
Han Woong Yeom
Abstract:
In an electronic system with various interactions intertwined, revealing the origin of its many-body ground state is challenging and a direct experimental way to verify the correlated nature of an insulator has been lacking. Here we demonstrate a way to unambiguously distinguish a paradigmatic correlated insulator, a Mott insulator, from a trivial band insulator based on their distinct chemical be…
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In an electronic system with various interactions intertwined, revealing the origin of its many-body ground state is challenging and a direct experimental way to verify the correlated nature of an insulator has been lacking. Here we demonstrate a way to unambiguously distinguish a paradigmatic correlated insulator, a Mott insulator, from a trivial band insulator based on their distinct chemical behavior for a surface adsorbate using 1T-TaS2, which has been debated between a spin-frustrated Mott insulator or a spin-singlet trivial insulator. We start from the observation of different sizes of spectral gaps on different surface terminations and show that potassium adatoms on these two surface layers behave in totally different ways. This can be straightforwardly understood from distinct properties of a Mott and a band insulators due to the fundamental difference of a half and a full-filled orbital involved respectively. This work not only solves an outstanding problem in this particularly interesting material but also provides a simple touchstone to identify the correlated ground state of electrons experimentally.
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Submitted 10 March, 2021;
originally announced March 2021.
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Dual nature of localized phase defects in the In/Si(111) atomic wire array: impurities and short topological solitons
Authors:
Abdus Samad Razzaq,
Sun Kyu Song,
Tae-Hwan Kim,
Han Woong Yeom,
Stefan Wippermann
Abstract:
We demonstrate the existence of atomically-sized topological solitons in a quasi one-dimensional charge density wave system: indium atomic wires on Si(111). Performing joint scanning tunneling microscopy and density-functional calculations, we show that the Si(111)-(8x2)In surface features two conceptually different types of abrupt phase flip structures. One is caused by In adatoms and is, hence,…
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We demonstrate the existence of atomically-sized topological solitons in a quasi one-dimensional charge density wave system: indium atomic wires on Si(111). Performing joint scanning tunneling microscopy and density-functional calculations, we show that the Si(111)-(8x2)In surface features two conceptually different types of abrupt phase flip structures. One is caused by In adatoms and is, hence, non-solitonic in nature. The other one is an abrupt left-chiral soliton.
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Submitted 1 December, 2020;
originally announced December 2020.
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Superconductivity emerging from a stripe charge order in IrTe2 nanoflakes
Authors:
Sungyu Park,
So Young Kim,
Hyoung Kug Kim,
Min Jeong Kim,
Hoon Kim,
Gyu Seung Choi,
C. J. Won,
Sooran Kim,
Kyoo Kim,
Evgeny F. Talantsev,
Kenji Watanabe,
Takashi Taniguchi,
Sang-Wook Cheong,
B. J. Kim,
H. W. Yeom,
Jonghwan Kim,
Tae-Hwan Kim,
Jun Sung Kim
Abstract:
Superconductivity in the vicinity of a competing electronic order often manifests itself with a superconducting dome, centred at a presumed quantum critical point in the phase diagram. This common feature, found in many unconventional superconductors, has supported a prevalent scenario that fluctuations or partial melting of a parent order are essential for inducing or enhancing superconductivity.…
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Superconductivity in the vicinity of a competing electronic order often manifests itself with a superconducting dome, centred at a presumed quantum critical point in the phase diagram. This common feature, found in many unconventional superconductors, has supported a prevalent scenario that fluctuations or partial melting of a parent order are essential for inducing or enhancing superconductivity. Here we present a contrary example, found in IrTe2 nanoflakes of which the superconducting dome is identified well inside the parent stripe charge ordering phase in the thickness-dependent phase diagram. The coexisting stripe charge order in IrTe2 nanoflakes significantly increases the out-of-plane coherence length and the coupling strength of superconductivity, in contrast to the doped bulk IrTe2. These findings clarify that the inherent instabilities of the parent stripe phaseare sufficient to induce superconductivity in IrTe2 without its complete or partial melting. Our study highlights the thickness control as an effective means to unveil intrinsic phase diagrams of correlated vdW materials.
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Submitted 26 September, 2020;
originally announced September 2020.
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Atomic structures and electronic correlation of monolayer 1T-TaSe2
Authors:
Jae Whan Park,
Han Woong Yeom
Abstract:
We investigate atomic and electronic structures of monolayer 1T-TaSe2 using density functional theory calculations. Monolayers of 1T-TaSe2 were recently grown on graphene substrates and suggested as an intriguing Mott insulator [Nat. Phys. 16, 218 (2020)]. However, the prevailing structural model for the model system of 1T-TaS2, the cation-centered cluster of a David-star shape with strong electro…
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We investigate atomic and electronic structures of monolayer 1T-TaSe2 using density functional theory calculations. Monolayers of 1T-TaSe2 were recently grown on graphene substrates and suggested as an intriguing Mott insulator [Nat. Phys. 16, 218 (2020)]. However, the prevailing structural model for the model system of 1T-TaS2, the cation-centered cluster of a David-star shape with strong electron correlation, could not explain the characteristic and unusual orbital splitting observed in scanning tunneling spectroscopy experiments. We suggest an alternative structure model, an anion-centered cluster structure, which can reproduce most of the unusual spectroscopic characteristics with electron do** from the substrate without electron correlation. The unusual spectroscopic features observed, thus, seems to indicate a simple and usual band insulating state. This work indicates the importance of a large structural degree of freedom given for a cluster Mott insulator.
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Submitted 13 August, 2020;
originally announced August 2020.
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Honeycomb-Lattice Mott insulator on Tantalum Disulphide
Authors:
**won Lee,
Kyung-Hwan **,
Andrei Catuneanu,
Ara Go,
Jiwon Jung,
Choongjae Won,
Sang-Wook Cheong,
Jaeyoung Kim,
Feng Liu,
Hae-Young Kee,
Han Woong Yeom
Abstract:
Effects of electron many-body interactions amplify in an electronic system with a narrow bandwidth opening a way to exotic physics. A narrow band in a two-dimensional (2D) honeycomb lattice is particularly intriguing as combined with Dirac bands and topological properties but the material realization of a strongly interacting honeycomb lattice described by the Kane-Mele-Hubbard model has not been…
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Effects of electron many-body interactions amplify in an electronic system with a narrow bandwidth opening a way to exotic physics. A narrow band in a two-dimensional (2D) honeycomb lattice is particularly intriguing as combined with Dirac bands and topological properties but the material realization of a strongly interacting honeycomb lattice described by the Kane-Mele-Hubbard model has not been identified. Here we report a novel approach to realize a 2D honeycomb-lattice narrow-band system with strongly interacting 5$d$ electrons. We engineer a well-known triangular lattice 2D Mott insulator 1T-TaS$_2$ into a honeycomb lattice utilizing an adsorbate superstructure. Potassium (K) adatoms at an optimum coverage deplete one-third of the unpaired $d$ electrons and the remaining electrons form a honeycomb lattice with a very small hop**. Ab initio calculations show extremely narrow Z$_2$ topological bands mimicking the Kane-Mele model. Electron spectroscopy detects an order of magnitude bigger charge gap confirming the substantial electron correlation as confirmed by dynamical mean field theory. It could be the first artificial Mott insulator with a finite spin Chern number.
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Submitted 13 July, 2020;
originally announced July 2020.
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Tailoring high-TN interlayer antiferromagnetism in a van der Waals itinerant magnet
Authors:
Junho Seo,
Eun Su An,
Taesu Park,
Soo-Yoon Hwang,
Gi-Yeop Kim,
Kyung Song,
Eunseok Oh,
Minhyuk Choi,
Kenji Watanabe,
Takashi Taniguchi,
Youn Jung Jo,
Han Woong Yeom,
Si-Young Choi,
Ji Hoon Shim,
Jun Sung Kim
Abstract:
Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW antiferromagnets are expected to have several advantages over the widely-studied insulating counterparts in switching and detecting the spin states through electrica…
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Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW antiferromagnets are expected to have several advantages over the widely-studied insulating counterparts in switching and detecting the spin states through electrical currents but have been much less explored due to the lack of suitable materials. Here, utilizing the extreme sensitivity of the vdW interlayer magnetism to material composition, we report the itinerant antiferromagnetism in Co-doped Fe4GeTe2 with TN ~ 210 K, an order of magnitude increased as compared to other known AFM vdW metals. The resulting spin configurations and orientations are sensitively controlled by do**, magnetic field, temperature, and thickness, which are effectively read out by electrical conduction. These findings manifest strong merits of metallic vdW magnets with tunable interlayer exchange interaction and magnetic anisotropy, suitable for AFM spintronic applications.
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Submitted 27 April, 2020;
originally announced April 2020.
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Artificial Relativistic Molecules
Authors:
Jae Whan Park,
Hyo Sung Kim,
Thomas Brumme,
Thomas Heine,
Han Woong Yeom
Abstract:
We fabricate artificial molecules composed of heavy atom lead on a van der Waals crystal. Pb atoms templated on a honeycomb charge-order superstructure of IrTe2 form clusters ranging from dimers to heptamers including benzene-shaped ring hexamers. Tunneling spectroscopy and electronic structure calculations reveal the formation of unusual relativistic molecular orbitals within the clusters. The sp…
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We fabricate artificial molecules composed of heavy atom lead on a van der Waals crystal. Pb atoms templated on a honeycomb charge-order superstructure of IrTe2 form clusters ranging from dimers to heptamers including benzene-shaped ring hexamers. Tunneling spectroscopy and electronic structure calculations reveal the formation of unusual relativistic molecular orbitals within the clusters. The spin-orbit coupling is essential both in forming such Dirac electronic states and stabilizing the artificial molecules by reducing the adatom-substrate interaction. Lead atoms are found to be ideally suited for a maximized relativistic effect. This work initiates the use of novel two dimensional orderings to guide the fabrication of artificial molecules of unprecedented properties.
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Submitted 3 February, 2020;
originally announced February 2020.
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Emergent Honeycomb Network of Topological Excitations in Correlated Charge Density Wave
Authors:
Jae Whan Park,
Gil Young Cho,
**won Lee,
Han Woong Yeom
Abstract:
When two periodic potentials compete in materials, one may adopt the other, which straightforwardly generates topological defects. Of particular interest are domain walls in charge-, dipole-, and spin-ordered systems, which govern macroscopic properties and important functionality. However, detailed atomic and electronic structures of domain walls have often been uncertain and the microscopic mech…
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When two periodic potentials compete in materials, one may adopt the other, which straightforwardly generates topological defects. Of particular interest are domain walls in charge-, dipole-, and spin-ordered systems, which govern macroscopic properties and important functionality. However, detailed atomic and electronic structures of domain walls have often been uncertain and the microscopic mechanism of their functionality has been elusive. Here, we clarify the complete atomic and electronic structures of the domain wall network, a honeycomb network connected by Z$_{3}$ vortices, in the nearly commensurate Mott charge-density wave (CDW) phase of 1T-TaS$_{2}$. Scanning tunneling microscopy resolves characteristic charge orders within domain walls and their vortices. Density functional theory calculations disclose their unique atomic relaxations and the metallic in-gap states confined tightly therein. A generic theory is constructed, which connects this emergent honeycomb network of conducting electrons to the enhanced superconductivity.
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Submitted 21 July, 2019;
originally announced July 2019.
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Stable Flatbands, Topology, and Superconductivity of Magic Honeycomb Networks
Authors:
Jongjun M. Lee,
Chenhua Geng,
Jae Whan Park,
Masaki Oshikawa,
Sung-Sik Lee,
Han Woong Yeom,
Gil Young Cho
Abstract:
We propose a new principle to realize flatbands which are robust in real materials, based on a network superstructure of one-dimensional segments. This mechanism is naturally realized in the nearly commensurate charge-density wave of 1T-TaS${}_2$ with the honeycomb network of conducting domain walls, and the resulting flatband can naturally explain the enhanced superconductivity. We also show that…
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We propose a new principle to realize flatbands which are robust in real materials, based on a network superstructure of one-dimensional segments. This mechanism is naturally realized in the nearly commensurate charge-density wave of 1T-TaS${}_2$ with the honeycomb network of conducting domain walls, and the resulting flatband can naturally explain the enhanced superconductivity. We also show that corner states, which are a hallmark of the higher-order topological insulators, appear in the network superstructure.
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Submitted 27 March, 2020; v1 submitted 28 June, 2019;
originally announced July 2019.
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Pseudogap and weak multifractality in disordered Mott charge-density-wave insulator
Authors:
Jianhua Gao,
Jae Whan Park,
Kiseok Kim,
Sun Kyu Song,
Fangchu Chen,
Xuan Luo,
Yu** Sun,
Han Woong Yeom
Abstract:
The competition, coexistence and cooperation of various orders in low-dimensional materials like spin, charge, topological orders and charge-density-wave has been one of the most intriguing issues in condensed matter physics. In particular, layered transition metal dichalcogenides provide an ideal platform for studying such an interplay with a notable case of 1${T}$-TaS$_{2}$ featuring Mott-insula…
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The competition, coexistence and cooperation of various orders in low-dimensional materials like spin, charge, topological orders and charge-density-wave has been one of the most intriguing issues in condensed matter physics. In particular, layered transition metal dichalcogenides provide an ideal platform for studying such an interplay with a notable case of 1${T}$-TaS$_{2}$ featuring Mott-insulating ground state, charge-density-wave, spin frustration and emerging superconductivity together. We investigated local electronic states of Se-substituted 1${T}$-TaS$_{2}$ by scanning tunneling microscopy/spectroscopy (STM/STS), where superconductivity emerges from the unique Mott-CDW state. Spatially resolved STS measurements reveal that an apparent V-shape pseudogap forms at the Fermi Level (E$_{F}$), with the origin of the electronic states splitting and transformation from the Mott states, and the CDW gaps are largely preserved. The formation of the pseudogap has little correlation to the variation of local Se concentration, but appears to be a global characteristics. Furthermore, the correlation length of local density of states (LDOS) diverges at the Fermi energy and decays rapidly at high energies. The spatial correlation shows a power-law decay close to the Fermi energy. Our statistics analysis of the LDOS indicates that our system exhibits weak multifractal behavior of the wave functions. These findings strongly support a correlated metallic state induced by disorder in our system, which provides an new insight into the novel mechanism of emerging superconductivity in the two-dimensional correlated electronic systems.
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Submitted 9 April, 2019;
originally announced April 2019.
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Topological Landscape of Competing Charge Density Waves in 2H-NbSe2
Authors:
Gyeongcheol Gye,
Eunseok Oh,
Han Woong Yeom
Abstract:
Despite decades of studies on charge density wave (CDW) of 2H-NbSe2, the origin of its incommensurate CDW ground state has not been understood. We discover that CDW of 2H-NbSe2 is composed of two different, energetically competing, structures. The lateral heterostructures of two CDWs are entangled as topological excitations, which give rise to a CDW phase shift and the incommensuration without a c…
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Despite decades of studies on charge density wave (CDW) of 2H-NbSe2, the origin of its incommensurate CDW ground state has not been understood. We discover that CDW of 2H-NbSe2 is composed of two different, energetically competing, structures. The lateral heterostructures of two CDWs are entangled as topological excitations, which give rise to a CDW phase shift and the incommensuration without a conventional domain wall. A partially melt network of the topological excitations and their vertices explain an unusual landscape of domains. The unconventional topological role of competing phases disclosed here can be widely applied to various incommensuration or phase coexistence phenomena in materials.
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Submitted 29 December, 2018;
originally announced December 2018.
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Strong interband interaction in the excitonic insulator phase of Ta$_2$NiSe$_5$
Authors:
**won Lee,
Chang-Jong Kang,
Man ** Eom,
Jun Sung Kim,
Byung Il Min,
Han Woong Yeom
Abstract:
Excitonic insulator (EI) was proposed in 60's as a distinct insulating state originating from pure electronic interaction, but its material realization has been elusive with extremely few material candidates and with only limited evidence such as anomalies in transport properties, band dispersions, or optical transitions. We investigate the real-space electronic states of the low temperature phase…
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Excitonic insulator (EI) was proposed in 60's as a distinct insulating state originating from pure electronic interaction, but its material realization has been elusive with extremely few material candidates and with only limited evidence such as anomalies in transport properties, band dispersions, or optical transitions. We investigate the real-space electronic states of the low temperature phase in Ta$_2$NiSe$_5$ with an atomic resolution to clearly identify the quasiparticle energy gap together with the strong electron-hole band renormalization using scanning tunneling microscopy (STM) and spectroscopy (STS). These results are in good agreement with the EI transition scenario in Ta$_2$NiSe$_5$. Our spatially-resolved STS data and theoretical calculations reveal further the orbital inversion at band edges, which indicates the exciton condensation close to the Bardeen-Cooper-Schrieffer regime.
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Submitted 5 November, 2018;
originally announced November 2018.
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Atomically Abrupt Topological p-n Junction
Authors:
Sung Hwan Kim,
Kyung-Hwan **,
Byung Woo Kho,
Byeong-Gyu Park,
Feng Liu,
Jun Sung Kim,
Han Woong Yeom
Abstract:
Topological insulators (TI's) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p-n junctions. Unique electronic properties of a 'topological' p-n junction were prop…
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Topological insulators (TI's) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p-n junctions. Unique electronic properties of a 'topological' p-n junction were proposed theoretically such as the junction electronic state and the spin rectification. However, the fabrication of a lateral topological p-n junction has been challenging because of materials, process, and fundamental reasons. Here, we demonstrate an innovative approach to realize a p-n junction of topological surface states (TSS's) of a three-dimensional (3D) topological insulator (TI) with an atomically abrupt interface. When a ultrathin Sb film is grown on a 3D TI of Bi2Se3 with a typical n-type TSS, the surface develops a strongly p-type TSS through the substantial hybridization between the 2D Sb film and the Bi2Se3 surface. Thus, the Bi2Se3 surface covered partially with Sb films bifurcates into areas of n- and p-type TSS's as separated by atomic step edges with a lateral electronic junction of as short as 2 nm. This approach opens a different avenue toward various electronic and spintronic devices based on well defined topological p-n junctions with the scalability down to atomic dimensions
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Submitted 23 August, 2017;
originally announced August 2017.
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Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2
Authors:
Doohee Cho,
Gyeongcheol Gye,
**won Lee,
Sung-Hoon Lee,
Lihai Wang,
Sang-Wook Cheong,
Han Woong Yeom
Abstract:
Domain walls in interacting electronic systems can have distinct localized states, which often govern physical properties and may lead to unprecedented functionalities and novel devices. However, electronic states within domain walls themselves have not been clearly identified and understood for strongly correlated electron systems. Here, we resolve the electronic states localized on domain walls…
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Domain walls in interacting electronic systems can have distinct localized states, which often govern physical properties and may lead to unprecedented functionalities and novel devices. However, electronic states within domain walls themselves have not been clearly identified and understood for strongly correlated electron systems. Here, we resolve the electronic states localized on domain walls in a Mott-charge-density-wave(CDW) insulator 1T-TaS2 using scanning tunneling spectroscopy. We establish that the domain wall state decomposes into two nonconducting states located at the center of domain walls and edges of domains. Theoretical calculations reveal their atomistic origin as the local reconstruction of domain walls under the strong influence of electron correlation. Our results introduce a concept for the domain wall electronic property, the wall's own internal degrees of freedom, which is potentially related to the controllability of domain wall electronic properties.
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Submitted 26 June, 2017;
originally announced June 2017.
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Switching Chiral Solitons for Algebraic Operation of Topological Quaternary Digits
Authors:
Tae-Hwan Kim,
Sangmo Cheon,
Han Woong Yeom
Abstract:
Chirality is ubiquitous in nature and chiral objects in condensed matter are often excited states protected by system's topology. The use of chiral topological excitations to carry information has been demonstrated, where the information is robust against external perturbations. For instance, reading, writing, and transfer of binary information are demonstrated with chiral topological excitations…
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Chirality is ubiquitous in nature and chiral objects in condensed matter are often excited states protected by system's topology. The use of chiral topological excitations to carry information has been demonstrated, where the information is robust against external perturbations. For instance, reading, writing, and transfer of binary information are demonstrated with chiral topological excitations in magnetic systems, skyrmions, for spintronic devices. However, the next step, the logic or algebraic operation of such topological bits has not been realized yet. Here, we show experimentally the switching between solitons of different chirality in a one-dimensional electronic system with $Z_4$ topological symmetry. We found that a fast-moving achiral soliton merges with chiral solitons to switch their handedness. This corresponds to the realization of algebraic operation of $Z_4$ topological numbers. Chiral solitons could be exploited for storage and operation of robust topological multi-digit information.
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Submitted 6 February, 2017;
originally announced February 2017.
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Nanoscale Superconducting Honeycomb Charge Order in IrTe2
Authors:
Hyo Sung Kim,
Sooran Kim,
Kyoo Kim,
Byung Il Min,
Yong-Heum Cho,
Lihai Wang,
Sang-Wook Cheong,
Han Woong Yeom
Abstract:
Entanglement of charge orderings and other electronic orders such as superconductivity is in the core of challenging physics issues of complex materials including high temperature superconductivity. Here, we report on the observation of a unique nanometer scale honeycomb charge ordering of the cleaved IrTe2 surface, which hosts a superconducting state. IrTe2 was recently established to exhibit an…
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Entanglement of charge orderings and other electronic orders such as superconductivity is in the core of challenging physics issues of complex materials including high temperature superconductivity. Here, we report on the observation of a unique nanometer scale honeycomb charge ordering of the cleaved IrTe2 surface, which hosts a superconducting state. IrTe2 was recently established to exhibit an intriguing cascade of stripe charge orders. The stripe phases coexist with a hexagonal phase, which is formed locally and falls into a superconducting state below 3 K. The atomic and electronic structures of the honeycomb and hexagon pattern of this phase are consistent with the charge order nature but the superconductivity does not survive on neighboring stripe charge order domains. The present work provides an intriguing physics issue and a new direction of functionalization for two dimensional materials.
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Submitted 23 May, 2016;
originally announced May 2016.
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Topological phase transition and quantum spin Hall edge states of antimony few layers
Authors:
Sung Hwan Kim,
Kyung-Hwan **,
Joonbum Park,
Jun Sung Kim,
Seung-Hoon Jhi,
Han Woong Yeom
Abstract:
While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to material issues. Here, we introduce a new 2D TI material, Sb few layer films. Electronic structures of ultrathin Sb islands grown on Bi2Te2Se are investigated by sc…
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While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to material issues. Here, we introduce a new 2D TI material, Sb few layer films. Electronic structures of ultrathin Sb islands grown on Bi2Te2Se are investigated by scanning tunneling microscopy. The maps of local density of states clearly identify robust edge electronic states over the thickness of three bilayers in clear contrast to thinner islands. This indicates the topological edge states emerged through a 2D topological phase transition predicted between three and four bilayer films in recent theory. The non-trivial phase transition and edge states are confirmed for epitaxial films by extensive density-functional-theory calculations. This work provides an important material platform to exploit miscroscopic aspects of the quantum spin Hall phase and its quantum phase transition.
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Submitted 11 April, 2016;
originally announced April 2016.
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Construction of a $^3$He magnetic force microscope with a vector magnet
Authors:
**ho Yang,
Ilkyu Yang,
Yun Won Kim,
Dongwoo Shin,
Juyoung Jeong,
Dirk Wulferding,
Han Woong Yeom,
Jeehoon Kim
Abstract:
We constructed a $^3$He magnetic force microscope operating at the base temperature of 300 mK under a vector magnetic field of 2-2-9 T in the $x-y-z$ direction. Fiber optic interferometry as a detection scheme is employed in which two home-built fiber walkers are used for the alignment between the cantilever and the optical fiber. The noise level of the laser interferometer is close to its thermod…
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We constructed a $^3$He magnetic force microscope operating at the base temperature of 300 mK under a vector magnetic field of 2-2-9 T in the $x-y-z$ direction. Fiber optic interferometry as a detection scheme is employed in which two home-built fiber walkers are used for the alignment between the cantilever and the optical fiber. The noise level of the laser interferometer is close to its thermodynamic limit. The capabilities of the sub-Kelvin and vector field are demonstrated by imaging the coexistence of magnetism and superconductivity in a ferromagnetic superconductor (ErNi$_2$B$_2$C) at $T$=500 mK and by probing a dipole shape of a single Abrikosov vortex with an in-plane tip magnetization.
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Submitted 18 January, 2016;
originally announced January 2016.
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Topological fate of edge states of Bi single bilayer on Bi(111)
Authors:
Han Woong Yeom,
Kyung-Hwan **,
Seung-Hoon Jhi
Abstract:
We address the topological nature of electronic states of step edges of Bi(111) films by first principles band structure calculations. We confirm that the dispersion of step edge states reflects the topological nature of underlying films. This result unambiguously denies recent claims that the step edge state on the surface of a bulk Bi(111) crystal or a sufficiently thick Bi(111) films represents…
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We address the topological nature of electronic states of step edges of Bi(111) films by first principles band structure calculations. We confirm that the dispersion of step edge states reflects the topological nature of underlying films. This result unambiguously denies recent claims that the step edge state on the surface of a bulk Bi(111) crystal or a sufficiently thick Bi(111) films represents non-trivial edge states of the two dimensional topologcial insulator phase expected for a very thin Bi(111) film. The trivial step edge states have a gigantic spin splitting of one dimensional Rashba bands and the substantial intermixing with electronic states of the bulk, which might be exploited further.
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Submitted 7 November, 2015;
originally announced November 2015.
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Spatially resolved penetration depth measurements and vortex manipulation in the ferromagnetic superconductor ErNi2B2C
Authors:
Dirk Wulferding,
Ilkyu Yang,
**ho Yang,
Minkyung Lee,
Hee Cheul Choi,
Sergey L. Bud'ko,
Paul C. Canfield,
Han Woong Yeom,
Jeehoon Kim
Abstract:
We present a local probe study of the magnetic superconductor, ErNi$_2$B$_2$C, using magnetic force microscopy at sub-Kelvin temperatures. ErNi$_2$B$_2$C is an ideal system to explore the effects of concomitant superconductivity and ferromagnetism. At 500 mK, far below the transition to a weakly ferromagnetic state, we directly observe a structured magnetic background on the micrometer scale. We d…
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We present a local probe study of the magnetic superconductor, ErNi$_2$B$_2$C, using magnetic force microscopy at sub-Kelvin temperatures. ErNi$_2$B$_2$C is an ideal system to explore the effects of concomitant superconductivity and ferromagnetism. At 500 mK, far below the transition to a weakly ferromagnetic state, we directly observe a structured magnetic background on the micrometer scale. We determine spatially resolved absolute values of the magnetic penetration depth $λ$ and study its temperature dependence as the system undergoes magnetic phase transitions from paramagnetic to antiferromagnetic, and to weak ferromagnetic, all within the superconducting regime. In addition, we estimate the absolute pinning force of Abrikosov vortices, which shows a position- and temperature dependence as well, and discuss the possibility of the purported spontaneous vortex formation.
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Submitted 14 August, 2015;
originally announced August 2015.
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Magnetic domain tuning and the emergence of bubble domains in the bilayer manganite La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ (x=0.32)
Authors:
Juyoung Jeong,
Ilkyu Yang,
**ho Yang,
Oscar E. Ayala-Valenzuela,
Dirk Wulferding,
J. -S. Zhou,
John B. Goodenough,
Alex de Lozanne,
John F. Mitchell,
Neliza Leon,
Roman Movshovich,
Yoon Hee Jeong,
Han Woong Yeom,
Jeehoon Kim
Abstract:
We report a magnetic force microscopy study of the magnetic domain evolution in the layered manganite La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ (with $x=0.32$). This strongly correlated electron compound is known to exhibit a wide range of magnetic phases, including a recently uncovered biskyrmion phase. We observe a continuous transition from dendritic to stripe-like domains, followed by the formation of…
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We report a magnetic force microscopy study of the magnetic domain evolution in the layered manganite La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ (with $x=0.32$). This strongly correlated electron compound is known to exhibit a wide range of magnetic phases, including a recently uncovered biskyrmion phase. We observe a continuous transition from dendritic to stripe-like domains, followed by the formation of magnetic bubbles due to a field- and temperature dependent competition between in-plane and out-of-plane spin alignments. The magnetic bubble phase appears at comparable field- and temperature ranges as the biskyrmion phase, suggesting a close relation between both phases. Based on our real-space images we construct a temperature-field phase diagram for this composition.
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Submitted 14 August, 2015;
originally announced August 2015.
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Interplay of electron-electron and electron-phonon interactions in the low temperature phase of 1T-TaS2
Authors:
Doohee Cho,
Yong-Heum Cho,
Sang-Wook Cheong,
Ki-Seok Kim,
Han Woong Yeom
Abstract:
We investigate the interplay of the electron-electron and electron-phonon interactions in the electronic structure of an exotic insulating state in the layered dichalcogenide 1T-TaS2, where the charge-density-wave (CDW) order coexists with a Mott correlation gap. Scanning tunneling microscopy and spectroscopy measurements with high spatial and energy resolution determine unambiguously the CDW and…
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We investigate the interplay of the electron-electron and electron-phonon interactions in the electronic structure of an exotic insulating state in the layered dichalcogenide 1T-TaS2, where the charge-density-wave (CDW) order coexists with a Mott correlation gap. Scanning tunneling microscopy and spectroscopy measurements with high spatial and energy resolution determine unambiguously the CDW and the Mott gap as 0.20-0.24 eV and 0.32 eV, respectively, through the real space electron phases measured across the multiply formed energy gaps. An unusual local reduction of the Mott gap is observed on the defect site, which indicates the renormalization of the on-site Coulomb interaction by the electron-phonon coupling as predicted by the Hubbard-Holstein model. The Mott-gap renormalization provides new insight into the disorder-induced quasi-metallic phases of 1T-TaS2.
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Submitted 4 May, 2015;
originally announced May 2015.
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Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
Authors:
Doohee Cho,
Sangmo Cheon,
Ki-Seok Kim,
Sung-Hoon Lee,
Yong-Heum Cho,
Sang-Wook Cheong,
Han Woong Yeom
Abstract:
Quantum states of strongly correlated electrons are of prime importance to understand exotic properties of condensed matter systems and the controllability over those states promises unique electronic devices such as a Mott memory. As a recent example, a ultrafast switching device was demonstrated using the transition between the correlated Mott insulating state and a hidden-order metallic state o…
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Quantum states of strongly correlated electrons are of prime importance to understand exotic properties of condensed matter systems and the controllability over those states promises unique electronic devices such as a Mott memory. As a recent example, a ultrafast switching device was demonstrated using the transition between the correlated Mott insulating state and a hidden-order metallic state of a layered transition metal dichalcogenides 1T-TaS2. However, the origin of the hidden metallic state was not clear and only the macroscopic switching by laser pulse and carrier injection was reported. Here, we demonstrate the nanoscale manipulation of the Mott insulating state of 1T-TaS2. The electron pulse from a scanning tunneling microscope switches the insulating phase locally into a metallic phase which is textured with irregular domain walls in the charge density wave (CDW) order inherent to this Mott state. The metallic state is a novel correlated phase near the Mott criticality with a coherent feature at the Fermi energy, which is induced by the moderate reduction of electron correlation due to the decoherence in CDW. This work paves the avenue toward novel nanoscale electronic devices based on correlated electrons.
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Submitted 4 May, 2015; v1 submitted 4 May, 2015;
originally announced May 2015.
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Honeycomb Charge Ordering in IrTe$_2$
Authors:
Hyo Sung Kim,
Soo-Ran Kim,
Kyoo Kim,
Byung Il Min,
Yong-Heum Cho,
Sang-Wook Cheong,
Han Woong Yeom
Abstract:
We report on the observation of a unique honeycomb charge ordering of the cleaved IrTe$_2$ surface by high-resolution scanning tunneling microscopy (STM) and spectroscopy (STS). IrTe$_2$ was recently established to exhibit intriguing stripe charge orderings. Here, we show that the stripe charge order coexists with a metastable honeycomb phase formed locally. The atomic and electronic structures of…
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We report on the observation of a unique honeycomb charge ordering of the cleaved IrTe$_2$ surface by high-resolution scanning tunneling microscopy (STM) and spectroscopy (STS). IrTe$_2$ was recently established to exhibit intriguing stripe charge orderings. Here, we show that the stripe charge order coexists with a metastable honeycomb phase formed locally. The atomic and electronic structures of the honeycomb phase are consistent with the stripe phase indicating unambiguously its charge order nature. A simple model of the honeycomb structure is suggested based on the overlap of three degenerate stripe orders, which is analogous to the 3$q$ state description of a skyrmion. We suggest that the honeycomb charge order can be a route to an exotic Dirac electron system.
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Submitted 2 January, 2019; v1 submitted 4 May, 2015;
originally announced May 2015.
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Electron Quantization in Broken Atomic Wires
Authors:
Eui Hwan Do,
Han Woong Yeom
Abstract:
We demonstrate using scanning tunneling microscopy and spectroscopy the electron quantization within metallic Au atomic wires self-assembled on a Si(111) surface and segmented by adatom impurities. The local electronic states of wire segments with a length up to 10 nm are investigated as terminated by two neighboring Si adatoms. One dimensional (1D) quantum well states are well resolved by their s…
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We demonstrate using scanning tunneling microscopy and spectroscopy the electron quantization within metallic Au atomic wires self-assembled on a Si(111) surface and segmented by adatom impurities. The local electronic states of wire segments with a length up to 10 nm are investigated as terminated by two neighboring Si adatoms. One dimensional (1D) quantum well states are well resolved by their spatial distributions and the inverse-length-square dependence in their energies. The quantization also results in the quantum oscillation of the conductance at the Fermi level. These results deny the dopant role of the adatoms assumed for a long time but indicate their strong scattering nature. The present approach provides a new and convenient platform to investigate 1D quantum phenomena with atomic precision.
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Submitted 1 May, 2015;
originally announced May 2015.
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Transforming a Surface State of Topological Insulator by a Bi Cap** Layer
Authors:
Han Woong Yeom,
Sung Hwan Kim,
Woo Jong Shin,
Kyung-Hwan **,
Joonbum Park,
Tae-Hwan Kim,
Jun Sung Kim,
Hirotaka Ishikawa,
Kazuyuki Sakamoto,
Seung-Hoon Jhi
Abstract:
We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong elec…
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We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states kee** the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.
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Submitted 17 November, 2014;
originally announced November 2014.
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Impurity-mediated early condensation of an atomic layer electronic crystal
Authors:
Han Woong Yeom,
Deok Mahn Oh,
S. Wippermann,
W. G. Schmidt
Abstract:
While impurity has been known widely to affect phase transitions, the atomistic mechanisms have rarely been disclosed. We directly show in atomic scale how impurity atoms induces the condensation of a representative electronic phase, charge density wave (CDW), with scanning tunneling microscopy. Oxygen impurity atoms on the self-assembled metallic atomic wire array on a silicon crystal condense CD…
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While impurity has been known widely to affect phase transitions, the atomistic mechanisms have rarely been disclosed. We directly show in atomic scale how impurity atoms induces the condensation of a representative electronic phase, charge density wave (CDW), with scanning tunneling microscopy. Oxygen impurity atoms on the self-assembled metallic atomic wire array on a silicon crystal condense CDW locally even above the transition temperature, More interestingly, the CDW along the wires is induced not by a single atomic impurity but by the cooperation of multiple impurities. First principles calculations disclose the mechanism of the cooperation as the coherent superposition of the local lattice strain induced by impurities, stressing the coupled electronic and lattice degrees of freedom for CDW. This newly discovered mechanism can widely be applied to various important electronic orders coupled to lattice, opening the possibility of the atomic scale strain engineering.
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Submitted 2 November, 2014;
originally announced November 2014.
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Structural versus electronic distortions of symmetry-broken IrTe$_2$
Authors:
Hyo Sung Kim,
Tae-Hwan Kim,
Junjie Yang,
Sang-Wook Cheong,
Han Woong Yeom
Abstract:
We investigate atomic and electronic structures of the intriguing low temperature phase of IrTe2 using high-resolution scanning tunneling microscopy and spectroscopy. We confirm various stripe superstructures such as $\times$3, $\times$5, and $\times$8. The strong vertical and lateral distortions of the lattice for the stripe structures are observed in agreement with recent calculations. The spati…
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We investigate atomic and electronic structures of the intriguing low temperature phase of IrTe2 using high-resolution scanning tunneling microscopy and spectroscopy. We confirm various stripe superstructures such as $\times$3, $\times$5, and $\times$8. The strong vertical and lateral distortions of the lattice for the stripe structures are observed in agreement with recent calculations. The spatial modulations of electronic density of states are clearly identified as separated from the structural distortions. These structural and spectroscopic characteristics are not consistent with the charge-density wave and soliton lattice model proposed recently. Instead, we show that the Ir (Te) dimerization together with the Ir 5d charge ordering can explain these superstructures, supporting the Ir dimerization mechanism of the phase transition.
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Submitted 21 October, 2014;
originally announced October 2014.
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Atomic scale variation of electron tunneling into a Luttinger liquid ? : High resolution scanning tunneling spectroscopy study on Au/Ge(001)
Authors:
Jewook Park,
Kan Nakatsuji,
Tae-Hwan Kim,
Sun Kyu Song,
Fumio Komori,
Han Woong Yeom
Abstract:
Au-induced atomic wires on the Ge(001) surface were recently claimed to be an ideal 1D metal and their tunneling spectra were analyzed as the manifestation of a Tomonaga-Luttinger liquid (TLL) state. We reinvestigate this system for atomically well-ordered areas of the surface with high resolution scanning tunneling microscopy and spectroscopy (STS). The local density-of-states maps do not provide…
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Au-induced atomic wires on the Ge(001) surface were recently claimed to be an ideal 1D metal and their tunneling spectra were analyzed as the manifestation of a Tomonaga-Luttinger liquid (TLL) state. We reinvestigate this system for atomically well-ordered areas of the surface with high resolution scanning tunneling microscopy and spectroscopy (STS). The local density-of-states maps do not provide any evidence of a metallic 1D electron channel along the wires. Moreover, the atomically resolved tunneling spectra near the Fermi energy are dominated by local density-of-states features, deviating qualitatively from the power-law behavior. On the other hand, the defects strongly affect the tunneling spectra near the Fermi level. These results do not support the possibility of a TLL state for this system. An 1D metallic system with well-defined 1D bands and without defects are required for the STS study of a TLL state.
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Submitted 17 September, 2014;
originally announced September 2014.
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Edge and Interfacial States in a 2D Topological Insulator:Bi(111) Bilayer on Bi$_{2}$Te$_{2}$Se
Authors:
Sung Hwan Kim,
Kyung-Hwan **,
Joonbum Park,
Jun Sung Kim,
Seung-Hoon Jhi,
Tae-Hwan Kim,
Han Woong Yeom
Abstract:
The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi$_{2}$Te$_{2}$Se crystal. The calculation shows that the band gap of the Bi bilayer closes wit…
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The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi$_{2}$Te$_{2}$Se crystal. The calculation shows that the band gap of the Bi bilayer closes with a formation of a new but small hybridization gap due to the strong interaction between Bi and Bi$_{2}$Te$_{2}$Se. Nevertheless, the topological nature of the Bi bilayer and the topological edge state are preserved only with an energy shift. The edge-enhanced local density of states are identified and visualized clearly by STS in good agreement with the calculation. This can be the sign of the topological edge state, which corresponds to the quantum spin Hall state. The interfacial state between Bi and Bi$_{2}$Te$_{2}$Se is also identified inside the band gap region. This state also exhibits the edge modulation, which was previously interpreted as the evidence of the topological edge state [F. Yang et al., Phys. Rev. Lett. 109, 016801 (2012)].
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Submitted 9 April, 2014; v1 submitted 8 April, 2014;
originally announced April 2014.
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Self-Assembled Nanowires with Giant Rashba-Type Band Splitting
Authors:
Jewook Park,
Sung Won Jung,
Min-Cherl Jung,
Hiroyuki Yamane,
Nobuhiro Kosugi,
Han Woong Yeom
Abstract:
We investigated Pt-induced nanowires on the Si(110) surface using scanning tunneling microscopy (STM) and angle-resolved photoemission (ARP). High resolution STM images show a well-ordered nanowire array of 1.6 nm width and 2.7 nm separation. ARP reveals fully occupied one dimensional (1D) bands with a Rashba-type split dispersion. Local dI/dV spectra further indicate well confined 1D electron cha…
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We investigated Pt-induced nanowires on the Si(110) surface using scanning tunneling microscopy (STM) and angle-resolved photoemission (ARP). High resolution STM images show a well-ordered nanowire array of 1.6 nm width and 2.7 nm separation. ARP reveals fully occupied one dimensional (1D) bands with a Rashba-type split dispersion. Local dI/dV spectra further indicate well confined 1D electron channels on the nanowires, whose density of states characteristics are consistent with the Rashba-type band splitting. The observed energy and momentum splitting of the bands are among the largest ever reported for Rashba systems, suggesting the Pt-Si nanowire as a unique 1D giant Rashba system. This self-assembled nanowire can be exploited for silicon-based spintronics devices as well as the quest for Majorana Fermions.
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Submitted 10 January, 2013;
originally announced January 2013.
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Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene
Authors:
Keun Su Kim,
Tae-Hwan Kim,
Andrew L. Walter,
Thomas Seyller,
Han Woong Yeom,
Eli Rotenberg,
Aaron Bostwick
Abstract:
We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singulari…
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We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunneling contact are found to strongly impact on NDR through the electron interference. Our result provides an atomic-level understanding of quantum tunneling in bilayer graphene, and constitutes a useful step towards graphene-based tunneling devices.
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Submitted 2 January, 2013;
originally announced January 2013.
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Topological Solitons versus Non-Solitonic Phase Defects in Quasi-One-Dimensional Charge Density Wave
Authors:
Tae-Hwan Kim,
Han Woong Yeom
Abstract:
We investigated phase defects in a quasi-one-dimensional commensurate charge density wave (CDW) system, an In atomic wire array on Si(111), using low temperature scanning tunneling microscopy. The unique four-fold degeneracy of the CDW state leads to various phase defects, among which intrinsic solitons are clearly distinguished. The solitons exhibit a characteristic variation of the CDW amplitude…
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We investigated phase defects in a quasi-one-dimensional commensurate charge density wave (CDW) system, an In atomic wire array on Si(111), using low temperature scanning tunneling microscopy. The unique four-fold degeneracy of the CDW state leads to various phase defects, among which intrinsic solitons are clearly distinguished. The solitons exhibit a characteristic variation of the CDW amplitude with a coherence length of about 4 nm, as expected from the electronic structure, and a localized electronic state within the CDW gap. While most of the observed solitons are trapped by extrinsic defects, moving solitons are also identified and their novel interaction with extrinsic defects is disclosed.
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Submitted 23 November, 2012;
originally announced November 2012.
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Radial Band Structure of Electrons in Liquid Metals
Authors:
Keun Su Kim,
Han Woong Yeom
Abstract:
The electronic band structure of a liquid metal was investigated by measuring precisely the evolution of angle-resolved photoelectron spectra during the melting of a Pb monolayer on a Si(111) surface. We found that the liquid monolayer exhibits a free-electron-like band and it undergoes a coherent radial scattering, imposed by the radial correlation of constituent atoms, to form a characteristic s…
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The electronic band structure of a liquid metal was investigated by measuring precisely the evolution of angle-resolved photoelectron spectra during the melting of a Pb monolayer on a Si(111) surface. We found that the liquid monolayer exhibits a free-electron-like band and it undergoes a coherent radial scattering, imposed by the radial correlation of constituent atoms, to form a characteristic secondary hole band. This unique double radial bands and their gradual evolution during melting can be quantitatively reproduced, including detailed spectral intensity profiles, with our radial scattering model based on a theoretical prediction of 1962. Our result establishes the radial band structure as a key concept for describing the nature of electrons in strongly disordered states of matter.
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Submitted 19 August, 2011;
originally announced August 2011.
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Nearly Massless Electrons in the Silicon Interface with a Metal Film
Authors:
Keun Su Kim,
Sung Chul Jung,
Myung Ho Kang,
Han Woong Yeom
Abstract:
We demonstrate the realization of nearly massless electrons in the most widely used device material, silicon, at the interface with a metal film. Using angle-resolved photoemission, we found that the surface band of a monolayer lead film drives a hole band of the Si inversion layer formed at the interface with the film to have nearly linear dispersion with an effective mass about 20 times lighter…
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We demonstrate the realization of nearly massless electrons in the most widely used device material, silicon, at the interface with a metal film. Using angle-resolved photoemission, we found that the surface band of a monolayer lead film drives a hole band of the Si inversion layer formed at the interface with the film to have nearly linear dispersion with an effective mass about 20 times lighter than bulk Si and comparable to graphene. The reduction of mass can be accounted for by repulsive interaction between neighboring bands of the metal film and Si substrate. Our result suggests a promising way to take advantage of massless carriers in silicon-based thin-film devices, which can also be applied for various other semiconductor devices.
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Submitted 24 May, 2010;
originally announced May 2010.
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Stress relief as the driving force for self-assembled Bi nanolines
Authors:
J. H. G. Owen,
K. Miki,
H. Koh,
H. W. Yeom,
D. R. Bowler
Abstract:
Stress resulting from mismatch between a substrate and an adsorbed material has often been thought to be the driving force for the self-assembly of nanoscale structures. Bi nanolines self-assemble on Si(001), and are remarkable for their straightness and length -- they are often more than 400 nm long, and a kink in a nanoline has never been observed. Through electronic structure calculations, we…
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Stress resulting from mismatch between a substrate and an adsorbed material has often been thought to be the driving force for the self-assembly of nanoscale structures. Bi nanolines self-assemble on Si(001), and are remarkable for their straightness and length -- they are often more than 400 nm long, and a kink in a nanoline has never been observed. Through electronic structure calculations, we have found an energetically favourable structure for these nanolines that agrees with our scanning tunneling microscopy and photoemission experiments; the structure has an extremely unusual subsurface structure, comprising a double core of 7-membered rings of silicon. Our proposed structure explains all the observed features of the nanolines, and shows that surface stress resulting from the mismatch between the Bi and the Si substrate are responsible for their self-assembly. This has wider implications for the controlled growth of nanostructures on semiconductor surfaces.
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Submitted 28 February, 2002;
originally announced February 2002.