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A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange
Authors:
Kevin Ye,
Ida Sadeghi,
Michael Xu,
Jack Van Sambeek,
Tao Cai,
Jessica Dong,
Rishabh Kothari,
James M. LeBeau,
R. Jaramillo
Abstract:
We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photocondu…
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We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photoconductive response and a lower density of extended defects, compared to alloy films made by direct growth. The perovskite structure is stable in high-selenium-content thin films with and without epitaxy. The manufacturing-compatible process of selenization in H2Se gas may spur the development of chalcogenide perovskite solar cell technology.
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Submitted 13 March, 2024;
originally announced March 2024.
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Vibrational properties differ between halide and chalcogenide perovskite semiconductors, and it matters for optoelectronic performance
Authors:
K. Ye,
M. Menahem,
T. Salzillo,
F. Knoop,
B. Zhao,
S. Niu,
O. Hellman,
J. Ravichandran,
R. Jaramillo,
O. Yaffe
Abstract:
We report a comparative study of temperature-dependent photoluminescence and structural dynamics of two perovskite semiconductors, the chalcogenide BaZrS$_3$ (BZS) and the halide CsPbBr$_3$ (CPB). These materials have similar crystal structures and direct band gaps, but we find that they have quite distinct optoelectronic and vibrational properties. Both materials exhibit thermally-activated non-r…
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We report a comparative study of temperature-dependent photoluminescence and structural dynamics of two perovskite semiconductors, the chalcogenide BaZrS$_3$ (BZS) and the halide CsPbBr$_3$ (CPB). These materials have similar crystal structures and direct band gaps, but we find that they have quite distinct optoelectronic and vibrational properties. Both materials exhibit thermally-activated non-radiative recombination, but the non-radiative recombination rate in BZS is between two and four orders of magnitude faster than in CPB. Raman spectroscopy reveals that the effects of phonon anharmonicity are far more pronounced in CPB than in BZS. Further, although both materials feature a large dielectric response due to low-energy polar optical phonons, the phonons in CPB are substantially lower in energy than in BZS. Our results suggest that electron-phonon coupling in BZS is more effective at non-radiative recombination than in CPB, and that BZS may also have a substantially higher concentration of non-radiative recombination centers than CPB. The low defect concentration in CPB may be related to the ease of lattice reconfiguration, typified by anharmonic bonding. It remains to be seen to what extent these differences are inherent to the chalcogenide and halide perovskites and to what extent they can be affected by materials processing; comparing BZS single-crystals and thin films provides reason for optimism.
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Submitted 14 April, 2024; v1 submitted 29 February, 2024;
originally announced February 2024.
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High-temperature superconductivity with zero-resistance and strange metal behavior in La$_{3}$Ni$_{2}$O$_{7-δ}$
Authors:
Yanan Zhang,
Dajun Su,
Yanen Huang,
Zhaoyang Shan,
Hualei Sun,
Mengwu Huo,
Kaixin Ye,
Jiawen Zhang,
Zihan Yang,
Yongkang Xu,
Yi Su,
Rui Li,
Michael Smidman,
Meng Wang,
Lin Jiao,
Huiqiu Yuan
Abstract:
Recently signatures of superconductivity were observed close to 80 K in \LN\ under pressure. This discovery positions \LN\ as the first bulk nickelate with high-temperature superconductivity, but the lack of zero resistance presents a significant drawback for validating the findings. Here we report pressure measurements up to over 30 GPa using a liquid pressure medium and show that single crystals…
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Recently signatures of superconductivity were observed close to 80 K in \LN\ under pressure. This discovery positions \LN\ as the first bulk nickelate with high-temperature superconductivity, but the lack of zero resistance presents a significant drawback for validating the findings. Here we report pressure measurements up to over 30 GPa using a liquid pressure medium and show that single crystals of \LNO\ do exhibit zero resistance. We find that \LNO\ remains metallic under applied pressures, suggesting the absence of a metal-insulator transition proximate to the superconductivity. Analysis of the normal state $T$-linear resistance suggests an intricate link between this strange metal behaviour and superconductivity, whereby at high pressures both the linear resistance coefficient and superconducting transition are slowly suppressed by pressure, while at intermediate pressures both the superconductivity and strange metal behaviour appear disrupted, possibly due to a nearby structural instability. The association between strange metal behaviour and high-temperature superconductivity is very much in line with diverse classes of unconventional superconductors, including the cuprates and Fe-based superconductors. Understanding the superconductivity of \LNO\ evidently requires further revealing the interplay of strange metal behaviour, superconductivity, as well as possible competing electronic or structural phases.
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Submitted 18 April, 2024; v1 submitted 27 July, 2023;
originally announced July 2023.
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A new semiconducting perovskite alloy system made possible by gas-source molecular beam epitaxy
Authors:
Ida Sadeghi,
Jack Van Sambeek,
Tigran Simonian,
Michael Xu,
Kevin Ye,
Valeria Nicolosi,
James M. LeBeau,
R. Jaramillo
Abstract:
Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once per decade. Here we demonstrate epitaxial thin film growth of semiconducting chalcogenide perovskite alloys in the Ba-Zr-S-Se system by gas-source molecular bea…
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Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once per decade. Here we demonstrate epitaxial thin film growth of semiconducting chalcogenide perovskite alloys in the Ba-Zr-S-Se system by gas-source molecular beam epitaxy (MBE). We stabilize the full range y = 0 ... 3 of compositions BaZrS$_{(3-y)}$Se$_y$ in the perovskite structure, up to and including BaZrSe$_3$, by growing on BaZrS$_3$ epitaxial templates. The resulting films are environmentally stable and the direct band gap ($E_g$) varies strongly with Se content, as predicted by theory, covering the range $E_g$ = 1.9 ... 1.4 eV for $y$ = 0 ... 3. This creates possibilities for visible and near-infrared (VIS-NIR) optoelectronics, solid state lighting, and solar cells using chalcogenide perovskites.
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Submitted 29 December, 2022; v1 submitted 19 November, 2022;
originally announced November 2022.
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Making BaZrS3 chalcogenide perovskite thin films by molecular beam epitaxy
Authors:
Ida Sadeghi,
Kevin Ye,
Michael Xu,
James M. LeBeau,
R. Jaramillo
Abstract:
We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via two, competing g…
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We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via two, competing growth modes: buffered epitaxy, with a self-assembled interface layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites. This work sets the stage for develo** chalcogenide perovskites as a family of semiconductor alloys with properties that can be tuned with strain and composition in high-quality epitaxial thin films, as has been long-established for other systems including Si-Ge, III-Vs, and II-Vs. The methods demonstrated here also represent a revival of gas-source chalcogenide MBE.
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Submitted 21 May, 2021;
originally announced May 2021.
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InterPhon: Ab initio Interface Phonon Calculations within a 3D Electronic Structure Framework
Authors:
In Won Yeu,
Gyuseung Han,
Kun Hee Ye,
Cheol Seong Hwang,
Jung-Hae Choi
Abstract:
This work provides the community with an easily executable open-source Python package designed to automize the evaluation of Interfacial Phonons (InterPhon). Its strategy of arbitrarily defining the interfacial region and periodicity alleviates the excessive computational cost in applying ab initio phonon calculations to interfaces and enables efficient extraction of interfacial phonons. InterPhon…
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This work provides the community with an easily executable open-source Python package designed to automize the evaluation of Interfacial Phonons (InterPhon). Its strategy of arbitrarily defining the interfacial region and periodicity alleviates the excessive computational cost in applying ab initio phonon calculations to interfaces and enables efficient extraction of interfacial phonons. InterPhon makes it possible to apply all of the phonon-based predictions that have been available for bulk systems, to interfacial systems. The first example, in which this package was applied to InAs surfaces, demonstrates a systematic structure search for unexplored surface reconstructions, navigated by the imaginary mode of surface phonons. It eventually explains the anisotropic surface vibrations of the polar crystal. The second example, involving oxygen adsorption on Cu, reveals adsorption-induced vibrational change and its contribution to energetic stability. The third example, on a Si/GaAs interface, shows distinct vibrational patterns depending on interfacial structures. It leads to a prediction regarding the structural transition of interfaces and unveils the processing conditions for spontaneous growth of GaAs nanowires on Si. High-level automation in InterPhon will be of great help in elucidating interfacial atomic dynamics and in implementing an automated computational workflow for diverse interfacial systems.
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Submitted 21 April, 2021; v1 submitted 7 December, 2020;
originally announced December 2020.
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Topological Photonic Crystal of Large Valley Chern Numbers
Authors:
Xiang Xi,
Kang-** Ye,
Rui-Xin Wu
Abstract:
The recent realizations of topological valley phase in photonic crystal, an analog of gapped valleytronic materials in electronic system, are limited to the valley Chern number of one. In this letter, we present a new type of valley phase that can have large valley Chern number of two or three. The valley phase transitions between the different valley Chern numbers (from one to three) are realized…
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The recent realizations of topological valley phase in photonic crystal, an analog of gapped valleytronic materials in electronic system, are limited to the valley Chern number of one. In this letter, we present a new type of valley phase that can have large valley Chern number of two or three. The valley phase transitions between the different valley Chern numbers (from one to three) are realized by changing the configuration of the unit cell. We demonstrate that these new topological phases can guide the wave propagation robustly along the domain wall of sharp bent. Our results are promising for the exploration of new topological phenomena in photonic systems.
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Submitted 1 April, 2020;
originally announced April 2020.
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Crystal growth and structural analysis of perovskite chalcogenide BaZrS$_3$ and Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$
Authors:
Shanyuan Niu,
Boyang Zhao,
Kevin Ye,
Elisabeth Bianco,
Jieyang Zhou,
Michael E. McConney,
Charles Settens,
Ralf Haiges,
R. Jaramillo,
Jayakanth Ravichandran
Abstract:
Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS$_3$ and its Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$ by flux method. X-ray diffraction analyses showed space g…
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Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS$_3$ and its Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$ by flux method. X-ray diffraction analyses showed space group of $Pnma$ with lattice constants of $a$ = 7.056(3) Å\/, $b$ = 9.962(4) Å\/, $c$ = 6.996(3) Å\/ for BaZrS$_3$ and $P4_2/mnm$ with $a$ = 7.071(2) Å\/, $b$ = 7.071(2) Å\/, $c$ = 25.418(5) Å\/ for Ba$_3$Zr$_2$S$_7$. Rocking curves with full-width-at-half-maximum of 0.011$^\circ$ for BaZrS$_3$ and 0.027$^\circ$ for Ba$_3$Zr$_2$S$_7$ were observed. Pole figure analysis, scanning transmission electron microscopy images and electron diffraction patterns also establish high quality of grown crystals. The octahedra tilting in the corner-sharing octahedra network are analyzed by extracting the torsion angles.
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Submitted 12 September, 2019; v1 submitted 25 April, 2019;
originally announced April 2019.
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Thermal Stability Study of Transition Metal Perovskite Sulfides
Authors:
Shanyuan Niu,
JoAnna Milam-Guerrero,
Yucheng Zhou,
Kevin Ye,
Boyang Zhao,
Brent C. Melot,
Jayakanth Ravichandran
Abstract:
Transition metal perovskite chalcogenides, a class of materials with rich tunability in functionalities, are gaining increased attention as candidate materials for renewable energy applications. Perovskite oxides are considered excellent n-type thermoelectric materials. Compared to oxide counterparts, we expect the chalcogenides to possess more favorable thermoelectric properties such as lower lat…
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Transition metal perovskite chalcogenides, a class of materials with rich tunability in functionalities, are gaining increased attention as candidate materials for renewable energy applications. Perovskite oxides are considered excellent n-type thermoelectric materials. Compared to oxide counterparts, we expect the chalcogenides to possess more favorable thermoelectric properties such as lower lattice thermal conductivity and smaller band gap, making them promising material candidates for high temperature thermoelectrics. Thus, it is necessary to study the thermal properties of these materials in detail, especially thermal stability, to evaluate their potential. In this work, we report the synthesis and thermal stability study of five compounds, α-SrZrS$_3$, β-SrZrS$_3$, BaZrS$_3$, Ba$_2$ZrS$_4$, and Ba$_3$Zr$_2$S$_7$. These materials cover several structural types including distorted perovskite, needle-like, and Ruddlesden-Popper phases. Differential scanning calorimeter and thermo-gravimetric analysis measurements were performed up to 1200°C in air. Structural and chemical characterizations such as X-ray diffraction, Raman spectroscopy, and energy dispersive analytical X-ray spectroscopy were performed on all the samples before and after the heat treatment to understand the oxidation process. Our studies show that perovskite chalcogenides possess excellent thermal stability in air at least up to 600°C.
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Submitted 9 July, 2018;
originally announced July 2018.
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Band-Gap Control via Structural and Chemical Tuning of Transition Metal Perovskite Chalcogenides
Authors:
Shanyuan Niu,
Huaixun Huyan,
Yang Liu,
Matthew Yeung,
Kevin Ye,
Louis Blankemeier,
Thomas Orvis,
Debarghya Sarkar,
David J. Singh,
Rehan Kapadia,
Jayakanth Ravichandran
Abstract:
Transition metal perovskite chalcogenides (TMPC) are a new class of semiconductor materials with broad tunability of physical properties due to their chemical and structural flexibility. Theoretical calculations show that band gaps of TMPCs are tunable from Far IR to UV spectrum. Amongst these materials, more than a handful of materials have energy gap and very high absorption coefficients, which…
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Transition metal perovskite chalcogenides (TMPC) are a new class of semiconductor materials with broad tunability of physical properties due to their chemical and structural flexibility. Theoretical calculations show that band gaps of TMPCs are tunable from Far IR to UV spectrum. Amongst these materials, more than a handful of materials have energy gap and very high absorption coefficients, which are appropriate for optoelectronic applications, especially solar energy conversion. Despite several promising theoretical predictions, very little experimental studies on their physical properties are currently available, especially optical properties. We report a new synthetic route towards high quality bulk ceramic TMPCs and systematic study of three phases, SrZrS3 in two different room temperature stabilized phases and one of BaZrS3. All three materials were synthesized with a catalyzed solid-state reaction process in sealed ampoules. Structural and chemical characterizations establish high quality of the samples, which is confirmed by the intense room temperature photoluminescence (PL) spectra showing direct band gaps around 1.53eV, 2.13eV and 1.81eV respectively. The potential of these materials for solar energy conversion was evaluated by measurement of PL quantum efficiency and estimate of quasi Fermi level splitting.
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Submitted 25 April, 2018;
originally announced April 2018.
