On the generalizability of artificial neural networks in spin models
Authors:
Hon Man Yau,
Nan Su
Abstract:
The applicability of artificial neural networks (ANNs) is typically limited to the models they are trained with and little is known about their generalizability, which is a pressing issue in the practical application of trained ANNs to unseen problems. Here, by using the task of identifying phase transitions in spin models, we establish a systematic generalizability such that simple ANNs trained w…
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The applicability of artificial neural networks (ANNs) is typically limited to the models they are trained with and little is known about their generalizability, which is a pressing issue in the practical application of trained ANNs to unseen problems. Here, by using the task of identifying phase transitions in spin models, we establish a systematic generalizability such that simple ANNs trained with the two-dimensional ferromagnetic Ising model can be applied to the ferromagnetic $q$-state Potts model in different dimensions for $q \geq 2$. The same scheme can be applied to the highly nontrivial antiferromagnetic $q$-state Potts model. We demonstrate that similar results can be obtained by reducing the exponentially large state space spanned by the training data to one that comprises only three representative configurations artificially constructed through symmetry considerations. We expect our findings to simplify and accelerate the development of machine learning-assisted tasks in spin-model related disciplines in physics and materials science.
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Submitted 8 August, 2022; v1 submitted 26 June, 2020;
originally announced June 2020.
High-temperature Anomalous Hall Effect in Transition Metal Dichalcogenide-Ferromagnetic Insulator Heterostructure
Authors:
Sheung Mei Ng,
Hui Chao Wang,
Yu Kuai Liu,
Hon Fai Wong,
Hei Man Yau,
Chun Hung Suen,
Ze Han Wu,
Chi Wah Leung,
Ji Yan Dai
Abstract:
Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe2 thin film using heterostructure approach by depositing it on ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is demonstrated. In this hete…
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Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe2 thin film using heterostructure approach by depositing it on ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is demonstrated. In this heterostructure, significant anomalous Hall effect can be observed at temperatures up to at least 400 K, which is a record high temperature for the observation of AHE in TMDs, and the large RAHE is more than one order of magnitude larger than those previously reported value in topological insulators or TMDs based heterostructures. The magnetization of interfacial reaction-induced ZrO2 between YIG and ZrTe2 is believed to play a crucial role for the induced high-temperature anomalous Hall effect in the ZrTe2. These results reveal a promising system for the room-temperature spintronic device applications, and it may also open a new avenue toward introducing magnetism to TMDs and exploring the quantum AHE at higher temperatures considering the prediction of nontrivial topology in ZrTe2.
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Submitted 27 February, 2020;
originally announced February 2020.
