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Tunable incommensurability and spontaneous symmetry breaking in the reconstructed moiré-of-moiré lattices
Authors:
Daesung Park,
Changwon Park,
Eunjung Ko,
Kunihiro Yananose,
Rebecca Engelke,
Xi Zhang,
Konstantin Davydov,
Matthew Green,
Sang Hwa Park,
Jae Heon Lee,
Kenji Watanabe,
Takashi Taniguchi,
Sang Mo Yang,
Ke Wang,
Philip Kim,
Young-Woo Son,
Hyobin Yoo
Abstract:
Imposing incommensurable periodicity on the periodic atomic lattice can lead to complex structural phases consisting of locally periodic structure bounded by topological defects. Twisted trilayer graphene (TTG) is an ideal material platform to study the interplay between different atomic periodicities, which can be tuned by twist angles between the layers, leading to moiré-of-moiré lattices. Inter…
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Imposing incommensurable periodicity on the periodic atomic lattice can lead to complex structural phases consisting of locally periodic structure bounded by topological defects. Twisted trilayer graphene (TTG) is an ideal material platform to study the interplay between different atomic periodicities, which can be tuned by twist angles between the layers, leading to moiré-of-moiré lattices. Interlayer and intralayer interactions between two interfaces in TTG transform this moiré-of-moiré lattice into an intricate network of domain structures at small twist angles, which can harbor exotic electronic behaviors. Here we report a complete structural phase diagram of TTG with atomic scale lattice reconstruction. Using transmission electron microscopy combined with a new interatomic potential simulation, we show that a cornucopia of large-scale moiré lattices, ranging from triangular, kagome, and a corner-shared hexagram-shaped domain pattern, are present. For small twist angles below 0.1°, all domains are bounded by a network of two-dimensional domain wall lattices. In particular, in the limit of small twist angles, the competition between interlayer stacking energy and the formation of discommensurate domain walls leads to unique spontaneous symmetry breaking structures with nematic orders, suggesting the pivotal role of long-range interactions across entire layers. The diverse tessellation of distinct domains, whose topological network can be tuned by the adjustment of the twist angles, establishes TTG as a platform for exploring the interplay between emerging quantum properties and controllable nontrivial lattices.
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Submitted 24 February, 2024;
originally announced February 2024.
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Reversibly controlled ternary polar states and ferroelectric bias promoted by boosting square-tensile-strain
Authors:
Jun Han Lee,
Nguyen Xuan Duong,
Min-Hyoung Jung,
Hyun-Jae Lee,
Ahyoung Kim,
Youngki Yeo,
Junhyung Kim,
Gye-Hyeon Kim,
Byeong-Gwan Cho,
Jaegyu Kim,
Furqan Ul Hassan Naqvi,
Jong-Seong Bae,
Jeehoon Kim,
Chang Won Ahn,
Young-Min Kim,
Tae Kwon Song,
Jae-Hyeon Ko,
Tae-Yeong Koo,
Changhee Sohn,
Kibog Park,
Chan-Ho Yang,
Sang Mo Yang,
Jun Hee Lee,
Hu Young Jeong,
Tae Heon Kim
, et al. (1 additional authors not shown)
Abstract:
Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroe…
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Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroelectric and the pinched states by exploiting a new substrate of cubic perovskite, BaZrO$_{3}$, which boosts square-tensile-strain to BaTiO$_{3}$ and promotes four-variants in-plane spontaneous polarization with oxygen vacancy creation. First-principles calculations propose a complex of an oxygen vacancy and two Ti$^{3+}$ ions coins a charge-neutral defect-dipole. Cooperative control of the defect-dipole and the spontaneous polarization reveals ternary in-plane polar states characterized by biased/pinched hysteresis loops. Furthermore, we experimentally demonstrate that three electrically controlled polar-ordering states lead to switchable and non-volatile dielectric states for application of non-destructive electro-dielectric memory. This discovery opens a new route to develop functional materials via manipulating defect-dipoles and offers a novel platform to advance heteroepitaxy beyond the prevalent perovskite substrates.
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Submitted 12 September, 2022;
originally announced September 2022.
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Nonlinear domain wall velocity in ferroelectric Si-doped HfO$_{2}$ thin film capacitors
Authors:
So Yeon Lim,
Min Sun Park,
Ahyoung Kim,
Sang Mo Yang
Abstract:
We investigate the nonlinear response of the domain wall velocity ($v$) to an external electric field ($E_{ext}$) in ferroelectric Si-doped HfO$_{2}$ thin film capacitors using piezoresponse force microscopy (PFM) and switching current measurements. We verified the reliability of the PFM images of ferroelectric domain switching by comparing the switched volume fraction in the PFM images with the t…
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We investigate the nonlinear response of the domain wall velocity ($v$) to an external electric field ($E_{ext}$) in ferroelectric Si-doped HfO$_{2}$ thin film capacitors using piezoresponse force microscopy (PFM) and switching current measurements. We verified the reliability of the PFM images of ferroelectric domain switching by comparing the switched volume fraction in the PFM images with the time-dependent normalized switched polarization from the switching current data. Using consecutive time-dependent PFM images, we measured the velocity of the pure lateral domain wall motion at various $E_{ext}$. The $E_{ext}$-dependent $v$ values closely follow the nonlinear dynamic response of elastic objects in a disordered medium. The thermally activated creep and flow regimes were observed based on the magnitude of $E_{ext}$. With a dynamic exponent of $μ$ = 1, our thin film was found to have random-field defects, which is consistent with the Lorentzian distribution of characteristic switching time that was indicated in the switching current data.
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Submitted 12 March, 2021;
originally announced March 2021.
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Electronic Reconstruction Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films
Authors:
Lingfei Wang,
Rokyeon Kim,
Yoonkoo Kim,
Choong H. Kim,
Sangwoon Hwang,
Myung Rae Cho,
Yeong Jae Shin,
Saikat Das,
Jeong Rae Kim,
Sergei V. Kalinin,
Miyoung Kim,
Sang Mo Yang,
Tae Won Noh
Abstract:
Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic device applications. In the few-nanometer-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and de…
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Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic device applications. In the few-nanometer-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO3 films as a model system, we report an intrinsic tunneling conductance enhancement near the terrace edges. Scanning probe microscopy results demonstrate the existence of highly-conductive regions (tens of nanometers-wide) near the terrace edges. First-principles calculations suggest that the terrace edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling conductance enhancement can be discovered in other transition-metal-oxides and controlled by surface termination engineering. The controllable electronic reconstruction could facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases.
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Submitted 13 November, 2017;
originally announced November 2017.
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Controlled manipulation of oxygen vacancies using nanoscale flexoelectricity
Authors:
Saikat Das,
Bo Wang,
Ye Cao,
Myung Rae Cho,
Yeong Jae Shin,
Sang Mo Yang,
Lingfei Wang,
Minu Kim,
Sergei V. Kalinin,
Long-Qing Chen,
Tae Won Noh
Abstract:
Oxygen vacancies, especially their distribution, are directly coupled to the electromagnetic properties of oxides and related emergent functionalities that have implication in device applications. Here using a homoepitaxial strontium titanate thin film, we demonstrate a controlled manipulation of the oxygen vacancy distribution using the mechanical force from a scanning probe microscope tip. By co…
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Oxygen vacancies, especially their distribution, are directly coupled to the electromagnetic properties of oxides and related emergent functionalities that have implication in device applications. Here using a homoepitaxial strontium titanate thin film, we demonstrate a controlled manipulation of the oxygen vacancy distribution using the mechanical force from a scanning probe microscope tip. By combining Kelvin probe force microscopy imaging and phase-field simulations, we show that oxygen vacancies can move under a stress-gradient-induced depolarisation field. When tailored, this nanoscale flexoelectric effect enables a controlled spatial modulation. In motion, the scanning probe tip thereby deterministically reconfigures the spatial distribution of vacancies. The ability to locally manipulate oxygen vacancies on-demand provides a tool for the exploration of mesoscale quantum phenomena, and engineering multifunctional oxide devices.
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Submitted 21 September, 2017;
originally announced September 2017.
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Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface
Authors:
Yeong Jae Shin,
Lingfei Wang,
Yoonkoo Kim,
Ho-Hyun Nahm Daesu Lee,
Jeong Rae Kim,
Sang Mo Yang,
Jong-Gul Yoon,
**-Seok Chung,
Miyoung Kim,
Seo Hyoung Chang,
Tae Won Noh
Abstract:
With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface at…
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With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO-RuO2 or TiO2-SrO) with oxygen partial pressure (PO2) during PLD. We found that a uniform SrO-TiO2 termination sequence at the SRO/BTO interface can be achieved by lowering the PO2 to 5 mTorr, regardless of the total background gas pressure (Ptotal), growth mode, or growth rate. Our results indicate that the thermodynamic stability of the BTO surface at the low-energy kinetics stage of PLD can play an important role in surface/interface termination formation. This work paves the way for realizing termination engineering in functional oxide heterostructures.
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Submitted 10 August, 2017;
originally announced August 2017.
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Interface control of ferroelectricity in a SrRuO3/BaTiO3/SrRuO3 capacitor and its critical thickness
Authors:
Yeong Jae Shin,
Yoonkoo Kim,
Sung-** Kang,
Ho-Hyun Nahm,
Pattukkannu Murugavel,
Jeong Rae Kim,
Myung Rae Cho,
Lingfei Wang,
Sang Mo Yang,
Jong-Gul Yoon,
**-Seok Chung,
Miyoung Kim,
Hua Zhou,
Seo Hyoung Chang,
Tae Won Noh
Abstract:
The atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. Here, we demonstrate that the oxygen pressure (PO2) during growth plays an important role in controlling the interfacial…
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The atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. Here, we demonstrate that the oxygen pressure (PO2) during growth plays an important role in controlling the interfacial terminations of SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) ferroelectric capacitors. The SRO/BTO/SRO heterostructures were grown by the pulsed laser deposition (PLD) method. The top SRO/BTO interface grown at high PO2 (around 150 mTorr) usually exhibited a mixture of RuO2-BaO and SrO-TiO2 terminations. By reducing PO2, we obtained atomically sharp SRO/BTO top interfaces with uniform SrO-TiO2 termination. Using capacitor devices with symmetric and uniform interfacial termination, we were able to demonstrate for the first time that the ferroelectric (FE) critical thickness can reach the theoretical limit of 3.5 unit cells (u.c.).
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Submitted 6 February, 2017;
originally announced February 2017.
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Step bunching-induced vertical lattice mismatch and crystallographic tilt in vicinal BiFeO3(001) films
Authors:
T. H. Kim,
S. H. Baek,
S. Y. Jang,
S. M. Yang,
S. H. Chang,
T. K. Song,
J. -G. Yoon,
C. B. Eom,
J. -S. Chung,
T. W. Noh
Abstract:
Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along the film thickness were analyzed quantitatively using the X-ray diffraction technique. By generalizing the Nagai model, we estimated how step bunching resulted…
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Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along the film thickness were analyzed quantitatively using the X-ray diffraction technique. By generalizing the Nagai model, we estimated how step bunching resulted in the vertical lattice mismatch between adjacent BiFeO3 layers, which induced the strain relaxation and crystallographic tilt. The step bunching was confirmed by the increased terrace width on the BiFeO3 surface.
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Submitted 3 January, 2011;
originally announced January 2011.
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Unveiling the ac Dynamics of Ferroelectric Domains by Investigating the Frequency Dependence of Hysteresis Loops
Authors:
S. M. Yang,
J. Y. Jo,
T. H. Kim,
J. -G. Yoon,
T. K. Song,
H. N. Lee,
Z. Marton,
S. Park,
Y. Jo,
T. W. Noh
Abstract:
We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally activated creep motion at lower frequencies, and by viscous flow motion at higher frequencies. The dynamic crossover between the creep and flow regimes unveils t…
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We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally activated creep motion at lower frequencies, and by viscous flow motion at higher frequencies. The dynamic crossover between the creep and flow regimes unveils two frequency-dependent scaling regions of hysteresis loops. Based on these findings, we constructed a dynamic phase diagram for hysteretic ferroelectric domain dynamics in the presence of ac fields.
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Submitted 28 January, 2010;
originally announced January 2010.
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Epitaxial growth of multiferroic Pb(Zr0.57Ti0.43)O3-Pb(Fe2/3W1/3)O3 solid-solution thin films and their magnetoelectric effects
Authors:
D. Lee,
Y. -A. Park,
S. M. Yang,
T. K. Song,
Y. Jo,
N. Hur,
J. H. Jung,
T. W. Noh
Abstract:
We report on epitaxial growth of single-phase [Pb(Zr0.57Ti0.43)O3]0.8[Pb(Fe2/3W1/3)O3]0.2 (PZT-PFW) solid-solution thin films using pulsed laser deposition. X-ray diffraction measurements reveal that the films have a tetragonal structure. The films exhibit ferroelectric properties and weak ferromagnetic responses at room temperature. Magnetoelectric effects were investigated; the nonlinear magne…
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We report on epitaxial growth of single-phase [Pb(Zr0.57Ti0.43)O3]0.8[Pb(Fe2/3W1/3)O3]0.2 (PZT-PFW) solid-solution thin films using pulsed laser deposition. X-ray diffraction measurements reveal that the films have a tetragonal structure. The films exhibit ferroelectric properties and weak ferromagnetic responses at room temperature. Magnetoelectric effects were investigated; the nonlinear magnetoelectric coefficient was measured and found to be comparable to those of multiferroic hexagonal manganites, but at least two orders of magnitude smaller than that for polycrystalline PZT-PFW films.
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Submitted 27 January, 2010;
originally announced January 2010.
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Electric-field-controlled directional growth of ferroelectric domains in multiferroic BiFeO3 films
Authors:
T. H. Kim,
S. -H. Baek,
S. M. Yang,
S. Y. Jang,
D. Ortiz,
T. K. Song,
J. -S. Chung,
C. -B. Eom,
T. W. Noh,
J. -G. Yoon
Abstract:
We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which can create a symmetry breaking in a ferroelectric double well potential, causes ferroelectric domains to grow with preferred directionality under the influenc…
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We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which can create a symmetry breaking in a ferroelectric double well potential, causes ferroelectric domains to grow with preferred directionality under the influence of an electric field. Our results suggest the possibility of controlling the direction of domain growth with an electric field by imposing constraints on ferroelectric films, such as a strain gradient.
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Submitted 30 September, 2009;
originally announced September 2009.
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Nonlinear Dynamics of Domain Wall Propagation in Epitaxial Ferroelectric Thin Films
Authors:
J. Y. Jo,
S. M. Yang,
T. H. Kim,
H. N. Lee,
J. -G. Yoon,
S. Park,
Y. Jo,
M. H. Jung,
T. W. Noh
Abstract:
We investigated the ferroelectric domain wall propagation in epitaxial Pb(Zr,Ti)O3 thin films over a wide temperature range (3 - 300 K). We measured the domain wall velocity under various electric fields and found that the velocity data is strongly nonlinear with electric fields, especially at low temperature. We found that, as one of surface growth problems, our domain wall velocity data from f…
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We investigated the ferroelectric domain wall propagation in epitaxial Pb(Zr,Ti)O3 thin films over a wide temperature range (3 - 300 K). We measured the domain wall velocity under various electric fields and found that the velocity data is strongly nonlinear with electric fields, especially at low temperature. We found that, as one of surface growth problems, our domain wall velocity data from ferroelectric epitaxial film could be classified into the creep, depinning, and flow regimes due to competition between disorder and elasticity. The measured values of velocity and dynamical exponents indicate that the ferroelectric domain walls in the epitaxial films are fractal and pinned by a disorder-induced local field.
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Submitted 28 January, 2009;
originally announced January 2009.
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Domain wall motion in epitaxial Pb(Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy
Authors:
S. M. Yang,
J. Y. Jo,
D. J. Kim,
H. Sung,
T. W. Noh,
H. N. Lee,
J. -G. Yoon,
T. K. Song
Abstract:
We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with switching current measurements. We observed that domain wall speed (v) decreases with increases in domain size. We also observed that the average value of v,…
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We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with switching current measurements. We observed that domain wall speed (v) decreases with increases in domain size. We also observed that the average value of v, obtained under applied electric field (Eapp),showed creep behavior: i.e. <v> ~ exp(-E0/Eapp)^$μ$ with an exponent $μ$ of 0.9 $\pm$ 0.1 and an activation field E0 of about 700 kV/cm.
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Submitted 21 May, 2008;
originally announced May 2008.
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Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr_{x}Ti_{1-x})O_{3} thin films
Authors:
J. Y. Jo,
S. M. Yang,
H. S. Han,
D. J. Kim,
W. S. Choi,
T. W. Noh,
T. K. Song,
J. -G. Yoon,
C. -Y. Koo,
J. -H. Cheon,
S. -H. Kim
Abstract:
We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1-x)O3 thin films with various Zr concentrations. We could explain all the polarization switching behaviors well by assuming Lorentzian distributions in the logarithmic polarization switching time [Refer to J. Y. Jo et al., Phys. Rev. Lett. (in press)]. Based on this analysis, we found…
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We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1-x)O3 thin films with various Zr concentrations. We could explain all the polarization switching behaviors well by assuming Lorentzian distributions in the logarithmic polarization switching time [Refer to J. Y. Jo et al., Phys. Rev. Lett. (in press)]. Based on this analysis, we found that the Zr ion-substitution for Ti ions would induce broad distributions in the local field due to defect dipoles, which makes the ferroelectric domain switching occur more easily.
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Submitted 20 November, 2007; v1 submitted 22 October, 2007;
originally announced October 2007.
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Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors
Authors:
D. J. Kim,
J. Y. Jo,
T. H. Kim,
S. M. Yang,
B. Chen,
Y. S. Kim,
T. W. Noh
Abstract:
We investigated domain nucleation process in epitaxial Pb(Zr,Ti)O3 capacitors under a modified piezoresponse force microscope. We obtained domain evolution images during polarization switching process and observed that domain nucleation occurs at particular sites. This inhomogeneous nucleation process should play an important role in an early stage of switching and under a high electric field. W…
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We investigated domain nucleation process in epitaxial Pb(Zr,Ti)O3 capacitors under a modified piezoresponse force microscope. We obtained domain evolution images during polarization switching process and observed that domain nucleation occurs at particular sites. This inhomogeneous nucleation process should play an important role in an early stage of switching and under a high electric field. We found that the number of nuclei is linearly proportional to log(switching time), suggesting a broad distribution of activation energies for nucleation. The nucleation sites for a positive bias differ from those for a negative bias, indicating that most nucleation sites are located at ferroelectric/electrode interfaces.
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Submitted 15 September, 2007; v1 submitted 25 July, 2007;
originally announced July 2007.
