Showing 1–50 of 119 results for author: Yang, D

Impacts of Hot Electron Diffusion, Electron-Phonon Coupling, and Surface Atoms on Metal Surface Dynamics Revealed by Reflection Ultrafast Electron Diffraction

Authors: Xing He, Mithun Ghosh, Ding-Shyue Yang

Abstract: Metals exhibit nonequilibrium electron and lattice subsystems at transient times following femtosecond laser excitation. In the past four decades, various optical spectroscopy and time-resolved diffraction methods have been used to study electron-phonon coupling and the effects of underlying dynamical processes. Here, we take advantage of the surface specificity of reflection ultrafast electron di… ▽ More Metals exhibit nonequilibrium electron and lattice subsystems at transient times following femtosecond laser excitation. In the past four decades, various optical spectroscopy and time-resolved diffraction methods have been used to study electron-phonon coupling and the effects of underlying dynamical processes. Here, we take advantage of the surface specificity of reflection ultrafast electron diffraction (UED) to examine the structural dynamics of photoexcited metal surfaces, which are apparently slower in recovery than predicted by thermal diffusion from the profile of absorbed energy. Fast diffusion of hot electrons is found to critically reduce surface excitation and affect the temporal dependence of the increased atomic motions on not only the ultrashort but sub-nanosecond times. Whereas the two-temperature model with the accepted physical constants of platinum can reproduce the observed surface lattice dynamics, gold is found to exhibit appreciably larger-than-expected dynamic vibrational amplitudes of surface atoms while kee** the commonly used electron-phonon coupling constant. Such surface behavioral difference at transient times can be understood in the context of the different strengths of binding to surface atoms for the two metals. In addition, with the quantitative agreements between diffraction and theoretical results, we provide convincing evidence that surface structural dynamics can be reliably obtained by reflection UED even in the presence of laser-induced transient electric fields. △ Less

Submitted 15 May, 2024; originally announced May 2024.

Comments: 25 pages, 5 figures

Extremely long transverse optical needle focus for reflective metalens enabled by monolayer MoS$_2$

Authors: Zhonglin Li, Kangyu Gao, Yingying Wang, Ruitong Bie, Dongliang Yang, Tianze Yu, Renxi Gao, Wenjun Liu, Bo Zhong, Linfeng Sun

Abstract: Line-scan mode facilitates fast-speed and high-throughput imaging with develo** a suitable optical transverse needle focus. Metasurface with periodic structures such as diffractive rings, ellipses, and gratings could enable discrete focus evolving into line focus under momentum conservation, but still face the challenge of extremely low light power utilization brought by inevitably multiple high… ▽ More Line-scan mode facilitates fast-speed and high-throughput imaging with develo** a suitable optical transverse needle focus. Metasurface with periodic structures such as diffractive rings, ellipses, and gratings could enable discrete focus evolving into line focus under momentum conservation, but still face the challenge of extremely low light power utilization brought by inevitably multiple high-order diffractions. In addition, the designed focus requires the selection of particular optical functional materials. High dielectric constants in atomic transition metal dichalcogenides make significant phase modulation by bringing phase singularity at zero-reflection possible. However, no light power is available for use at zero-reflection and a balance between phase and amplitude modulation is needed. In this work, above issues are simultaneously solved by designing a monolayer MoS2 based Fresnel strip structure. An optical needle primary focus with a transverse length of 40 μm (~80 λ) is obtained, which is the longest value recorded so far, together with a sub-diffraction-limited lateral spot and a broad working wavelength range. This specially developed structure not only concentrates light power in primary diffraction by breaking restriction of momentum conservation, but also guarantees a consistent phase across different strips. The novel optical manipulation way provided here together with the longer focus length for flat optics will show promising applications in biology, oncology, nanofabrication, energy harvesting, and optical information processing. △ Less

Submitted 11 May, 2024; originally announced May 2024.

Comments: 22 pages, 5 figures

Miscibility of Binary Bose-Einstein Condensates with $p$-wave Interaction

Authors: Min Deng, Ming Xue, **ghan Pang, Hui Luo, Zhiguo Wang, **bin Li, Dayou Yang

Abstract: We investigate the ground-state phase diagram of a binary mixture of Bose-Einstein condensates (BECs) with competing interspecies $s$- and $p$-wave interactions. Exploiting a pseudopotential model for the $l=1$ partial wave, we derive an extended Gross-Pitaevskii (GP) equation for the BEC mixture that incorporates both $s$- and $p$-wave interactions. Based on it, we study the miscible-immiscible t… ▽ More We investigate the ground-state phase diagram of a binary mixture of Bose-Einstein condensates (BECs) with competing interspecies $s$- and $p$-wave interactions. Exploiting a pseudopotential model for the $l=1$ partial wave, we derive an extended Gross-Pitaevskii (GP) equation for the BEC mixture that incorporates both $s$- and $p$-wave interactions. Based on it, we study the miscible-immiscible transition of a binary BEC mixture in the presence of interspecies $p$-wave interaction, by combining numerical solution of the GP equation and Gaussian variational analysis. Our study uncovers a dual effect -- either enhance or reduce miscibility -- of positive interspecies $p$-wave interaction, which can be precisely controlled by adjusting relevant experimental parameters. By complete characterizing the miscibility phase diagram, we establish a promising avenue towards experimental control of the miscibility of binary BEC mixtures via high partial-wave interactions. △ Less

Submitted 14 April, 2024; originally announced April 2024.

Comments: 10+3 pages, 6 figures, Phys. Rev. A (2024)

Journal ref: Phys. Rev. A 109, 043324 (2024)

Optically Probing Unconventional Superconductivity in Atomically Thin Bi$_2$Sr$_2$Ca$_{0.92}$Y$_{0.08}$Cu$_2$O$_{8+δ}$

Authors: Yunhuan Xiao, **gda Wu, Jerry I Dadap, Kashif Masud Awan, Dongyang Yang, **g Liang, Kenji Watanabe, Takashi Taniguchi, Marta Zonno, Martin Bluschke, Hiroshi Eisaki, Martin Greven, Andrea Damascelli, Ziliang Ye

Abstract: Atomically thin cuprates exhibiting a superconducting phase transition temperature similar to bulk have recently been realized, although the device fabrication remains a challenge and limits the potential for many novel studies and applications. Here we use an optical pump-probe approach to noninvasively study the unconventional superconductivity in atomically thin Bi$_2$Sr$_2$Ca$_{0.92}$Y… ▽ More Atomically thin cuprates exhibiting a superconducting phase transition temperature similar to bulk have recently been realized, although the device fabrication remains a challenge and limits the potential for many novel studies and applications. Here we use an optical pump-probe approach to noninvasively study the unconventional superconductivity in atomically thin Bi$_2$Sr$_2$Ca$_{0.92}$Y$_{0.08}$Cu$_2$O$_{8+δ}$ (Y-Bi2212). Apart from finding an optical response due to the superconducting phase transition that is similar to bulk Y-Bi2212, we observe that the sign and amplitude of the pump-probe signal in the atomically thin flake vary significantly in different dielectric environments depending on the nature of the optical excitation. By exploiting the spatial resolution of the optical probe, we uncover the exceptional sensitivity of monolayer Y-Bi2212 to the environment. Our results provide the first optical evidence for the intralayer nature of the superconducting condensate in Bi2212, and highlight the role of double-sided encapsulation in preserving superconductivity in atomically thin cuprates. △ Less

Submitted 6 March, 2024; originally announced March 2024.

Comments: To be published in Nano Letters

A Bayesian Committee Machine Potential for Oxygen-containing Organic Compounds

Authors: Seungwon Kim, D. ChangMo Yang, Soohaeng Yoo Willow, Chang Woo Myung

Abstract: Understanding the pivotal role of oxygen-containing organic compounds in serving as an energy source for living organisms and contributing to protein formation is crucial in the field of biochemistry. This study addresses the challenge of comprehending protein-protein interactions (PPI) and develo** predicitive models for proteins and organic compounds, with a specific focus on quantifying their… ▽ More Understanding the pivotal role of oxygen-containing organic compounds in serving as an energy source for living organisms and contributing to protein formation is crucial in the field of biochemistry. This study addresses the challenge of comprehending protein-protein interactions (PPI) and develo** predicitive models for proteins and organic compounds, with a specific focus on quantifying their binding affinity. Here, we introduce the active Bayesian Committee Machine (BCM) potential, specifically designed to predict oxygen-containing organic compounds within eight groups of CHO. The BCM potential adopts a committee-based approach to tackle scalability issues associated with kernel regressors, particularly when dealing with large datasets. Its adaptable structure allows for efficient and cost-effective expansion, maintaing both transferability and scalability. Through systematic benchmarking, we position the sparse BCM potential as a promising contender in the pursuit of a universal machine learning potential. △ Less

Submitted 2 March, 2024; originally announced March 2024.

A Bayesian Committee Machine Potential for Organic Nitrogen Compounds

Authors: Hyun Gyu Park, Soohaeng Yoo Willow, D. ChangMo Yang, Chang Woo Myung

Abstract: Large-scale computer simulations of chemical atoms are used in a wide range of applications, including batteries, drugs, and more. However, there is a problem with efficiency as it takes a long time due to the large amount of calculation. To solve these problems, machine learning interatomic potential (ML-IAP) technology is attracting attention as an alternative. ML-IAP not only has high accuracy… ▽ More Large-scale computer simulations of chemical atoms are used in a wide range of applications, including batteries, drugs, and more. However, there is a problem with efficiency as it takes a long time due to the large amount of calculation. To solve these problems, machine learning interatomic potential (ML-IAP) technology is attracting attention as an alternative. ML-IAP not only has high accuracy by faithfully expressing the density functional theory (DFT), but also has the advantage of low computational cost. However, there is a problem that the potential energy changes significantly depending on the environment of each atom, and expansion to a wide range of compounds within a single model is still difficult to build in the case of a kernel-based model. To solve this problem, we would like to develop a universal ML-IAP using this active Bayesian Committee Machine (BCM) potential methodology for carbon-nitrogen-hydrogen (CNH) with various compositions. ML models are trained and generated through first-principles calculations and molecular dynamics simulations for molecules with only CNH. Using long amine structures to test an ML model trained only with short chains, the results show excellent consistency with DFT calculations. Consequently, machine learning-based models for organic molecules not only demonstrate the ability to accurately describe various physical properties but also hold promise for investigating a broad spectrum of diverse materials systems. △ Less

Submitted 26 February, 2024; originally announced February 2024.

Non-volatile electrical polarization switching via domain wall release in 3R-MoS$_2$ bilayer

Authors: Dongyang Yang, **g Liang, **gda Wu, Yunhuan Xiao, Jerry I. Dadap, Kenji Watanabe, Takashi Taniguchi, Ziliang Ye

Abstract: Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a bilayer MoS$_2$ with a natural rhombohedral stacking, where the spontaneous polarization is coupled with excitonic effects through an asymmetric interlayer coupling… ▽ More Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a bilayer MoS$_2$ with a natural rhombohedral stacking, where the spontaneous polarization is coupled with excitonic effects through an asymmetric interlayer coupling. Using optical spectroscopy and imaging techniques, we observe how a released domain wall switches the polarization of a large single domain. Our results highlight the importance of domain walls in the polarization switching of non-twisted rhombohedral transition metal dichalcogenides and open new opportunities for the non-volatile control of their optical response. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Comments: 4 Figures

Sketched Nanoscale KTaO3-Based Superconducting Quantum Interference Device

Authors: Muqing Yu, Nicholas Hougland, Qianheng Du, Junyi Yang, Sayanwita Biswas, Ranjani Ramachandran, Dengyu Yang, Anand Bhattacharya, David Pekker, Patrick Irvin, Jeremy Levy

Abstract: The discovery of two-dimensional superconductivity in LaAlO3/KTaO3 (111) and (110) interfaces has raised significant interest in this system. In this manuscript we report the first successful fabrication of a superconducting quantum interference device (DC-SQUID) in the KTO system. The key device elements, superconducting weak links, are created by conductive atomic force microscope (c-AFM) lithog… ▽ More The discovery of two-dimensional superconductivity in LaAlO3/KTaO3 (111) and (110) interfaces has raised significant interest in this system. In this manuscript we report the first successful fabrication of a superconducting quantum interference device (DC-SQUID) in the KTO system. The key device elements, superconducting weak links, are created by conductive atomic force microscope (c-AFM) lithography which can reversibly control the conductivity at the LAO/KTO(110) interface with nanoscale resolution. The periodic modulation of the SQUID critical current, Ic(B), with magnetic field corresponds well with our theoretical modeling, which reveals a large kinetic inductance of the superconducting two-dimensional electron gas in KTO. The kinetic inductance of the SQUID is tunable by electrical gating from the back, due to the large dielectric constant of KTO. The demonstration of weak links and SQUIDs in KTO broadens the scope for exploring the underlying physics of KTO superconductivity, including the role of spin-orbit-coupling, pairing symmetry, and inhomogeneity. It also promotes KTO as a versatile platform for a growing family of quantum devices, which could be applicable in the realm of quantum computing and information. △ Less

Submitted 5 February, 2024; v1 submitted 24 October, 2023; originally announced October 2023.

Comments: 40 pages, 16 figures

Duality of switching mechanisms and transient negative capacitance in improper ferroelectrics

Authors: Xin Li, Yu Yun, Pratyush Buragohain, Arashdeep Singh Thind, Donald A. Walko, Detian Yang, Rohan Mishra, Alexei Gruverman, Xiaoshan Xu

Abstract: The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this work, we report observation of transient negative capacitance in improper ferroelectric h-YbFeO3 films in a resistor-capacitor circuit, and a concaved shape of anomaly in the voltage wave form, in the early and late stage o… ▽ More The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this work, we report observation of transient negative capacitance in improper ferroelectric h-YbFeO3 films in a resistor-capacitor circuit, and a concaved shape of anomaly in the voltage wave form, in the early and late stage of the polarizations switching respectively. Using a phenomenological model, we show that the early-stage negative capacitance is likely due to the inhomogeneous switching involving nucleation and domain wall motion, while the anomaly at the late stage, which appears to be a reminiscent negative capacitance is the manifestation of the thermodynamically unstable part of the free-energy landscape in the homogeneous switching. The complex free-energy landscape in hexagonal ferrites may be the key to cause the abrupt change in polarization switching speed and the corresponding anomaly. These results reconcile the two seemingly conflicting mechanisms in the polarization switching and highlight their different roles at different stages. The unique energy-landscape in hexagonal ferrites that reveals the dual switching mechanism suggests the promising application potential in terms of negative capacitance. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Comments: 14 pages,5 figures

Microstructural and material property changes in severely deformed Eurofer-97

Authors: Kay Song, Guanze He, Abdallah Reza, Tamas Ungár, Phani Karamched, David Yang, Ivan Tolkachev, Kenichiro Mizohata, David E J Armstrong, Felix Hofmann

Abstract: Severe plastic deformation changes the microstructure and properties of steels, which may be favourable for their use in structural components of nuclear reactors. In this study, high-pressure torsion (HPT) was used to refine the grain structure of Eurofer-97, a ferritic/ martensitic steel. Electron microscopy and X-ray diffraction were used to characterise the microstructural changes. Following H… ▽ More Severe plastic deformation changes the microstructure and properties of steels, which may be favourable for their use in structural components of nuclear reactors. In this study, high-pressure torsion (HPT) was used to refine the grain structure of Eurofer-97, a ferritic/ martensitic steel. Electron microscopy and X-ray diffraction were used to characterise the microstructural changes. Following HPT, the average grain size reduced by a factor of $\sim$ 30, with a marked increase in high-angle grain boundaries. Dislocation density also increased by more than one order of magnitude. The thermal stability of the deformed material was investigated via in-situ annealing during synchrotron X-ray diffraction. This revealed substantial recovery between 450 K - 800 K. Irradiation with 20 MeV Fe-ions to $\sim$ 0.1 dpa caused a 20% reduction in dislocation density compared to the as-deformed material. However, HPT deformation prior to irradiation did not have a significant effect in mitigating the irradiation-induced reductions in thermal diffusivity and surface acoustic wave velocity of the material. These results provide a multi-faceted understanding of the changes in ferritic/martensitic steels due to severe plastic deformation, and how these changes can be used to alter material properties. △ Less

Submitted 15 August, 2023; originally announced August 2023.

Comments: 59 pages, 19 figures

Dose and compositional dependence of irradiation-induced property change in FeCr

Authors: Kay Song, Dina Sheyfer, Kenichiro Mizohata, Minyi Zhang, Wenjun Liu, Doğa Gürsoy, David Yang, Ivan Tolkachev, Hongbing Yu, David E J Armstrong, Felix Hofmann

Abstract: Ferritic/martensitic steels will be used as structural components in next generation nuclear reactors. Their successful operation relies on an understanding of irradiation-induced defect behaviour in the material. In this study, Fe and FeCr alloys (3-12%Cr) were irradiated with 20 MeV Fe-ions at 313 K to doses ranging between 0.00008 dpa to 6.0 dpa. This dose range covers six orders of magnitude,… ▽ More Ferritic/martensitic steels will be used as structural components in next generation nuclear reactors. Their successful operation relies on an understanding of irradiation-induced defect behaviour in the material. In this study, Fe and FeCr alloys (3-12%Cr) were irradiated with 20 MeV Fe-ions at 313 K to doses ranging between 0.00008 dpa to 6.0 dpa. This dose range covers six orders of magnitude, spanning low, transition and high dose regimes. Lattice strain and hardness in the irradiated material were characterised with micro-beam Laue X-ray diffraction and nanoindentation, respectively. Irradiation hardening was observed even at very low doses (0.00008 dpa) and showed a monotonic increase with dose up to 6.0 dpa. Lattice strain measurements of samples at 0.0008 dpa allow the calculation of equivalent Frenkel pair densities and corrections to the Norgett-Robinson-Torrens (NRT) model for Fe and FeCr alloys at low dose. NRT efficiency for FeCr is 0.2, which agrees with literature values for high irradiation energy. Lattice strain increases up to 0.8 dpa and then decreases when the damage dose is further increased. The strains measured in this study are lower and peak at a larger dose than predicted by atomistic simulations. This difference can be explained by taking temperature and impurities into account. △ Less

Submitted 4 March, 2024; v1 submitted 1 August, 2023; originally announced August 2023.

Comments: 49 pages, 9 figures, 3 tables

Ultra-fast Vacancy Migration: A Novel Approach for Synthesizing Sub-10 nm Crystalline Transition Metal Dichalcogenide Nanocrystals

Authors: Pawan Kumar, Jiazheng Chen, Andrew C. Meng, Wei-Chang D. Yang, Surendra B. Anantharaman, James P. Horwath, Juan C. Idrobo, Himani Mishra, Yuanyue Liu, Albert V. Davydov, Eric A. Stach, Deep Jariwala

Abstract: Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), have the potential to revolutionize the field of electronics and photonics due to their unique physical and structural properties. This research presents a novel method for synthesizing crystalline TMDCs crystals with < 10 nm size using ultra-fast migration of vacancies at elevated temperatures. Through in-situ and ex-sit… ▽ More Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), have the potential to revolutionize the field of electronics and photonics due to their unique physical and structural properties. This research presents a novel method for synthesizing crystalline TMDCs crystals with < 10 nm size using ultra-fast migration of vacancies at elevated temperatures. Through in-situ and ex-situ processing and using atomic-level characterization techniques, we analyze the shape, size, crystallinity, composition, and strain distribution of these nanocrystals. These nanocrystals exhibit electronic structure signatures that differ from the 2D bulk i.e., uniform mono and multilayers. Further, our in-situ, vacuum-based synthesis technique allows observation and comparison of defect and phase evolution in these crystals formed under van der Waals heterostructure confinement versus unconfined conditions. Overall, this research demonstrates a solid-state route to synthesizing uniform nanocrystals of TMDCs and lays the foundation for materials science in confined 2D spaces under extreme conditions. △ Less

Submitted 10 July, 2023; originally announced July 2023.

Comments: MS+SI

Dzyaloshinskii-Moriya torque-driven resonance in antiferromagnetic α-Fe2O3

Authors: Qiyao Liu, Taeheon Kim, Kyusup Lee, Dongsheng Yang, Dushyant Kumar, Fanrui Hu, Hyunsoo Yang

Abstract: We examine the high-frequency optical mode of α-Fe2O3 and report that Dzyaloshinskii-Moriya (DM) interaction generates a new type of torque on the magnetic resonance. Using a continuous-wave terahertz interferometer, we measure the optical mode spectra, where the asymmetric absorption with a large amplitude and broad linewidth is observed near the magnetic transition point, Morin temperature (TM ~… ▽ More We examine the high-frequency optical mode of α-Fe2O3 and report that Dzyaloshinskii-Moriya (DM) interaction generates a new type of torque on the magnetic resonance. Using a continuous-wave terahertz interferometer, we measure the optical mode spectra, where the asymmetric absorption with a large amplitude and broad linewidth is observed near the magnetic transition point, Morin temperature (TM ~ 254.3 K). Based on the spin wave model, the spectral anomaly is attributed to the DM interaction-induced torque, enabling to extract the strength of DM interaction field of 4 T. Our work opens a new avenue to characterize the spin resonance behaviors at an antiferromagnetic singular point for next-generation and high-frequency spin-based information technologies. △ Less

Submitted 9 July, 2023; originally announced July 2023.

Comments: 4 figures

Shear-strain-induced two-dimensional slip avalanches in rhombohedral MoS2

Authors: **g Liang, Dongyang Yang, Yunhuan Xiao, Sean Chen, Jerry I. Dadap, Joerg Rottler, Ziliang Ye

Abstract: Slip avalanches are ubiquitous phenomena occurring in 3D materials under shear strain and their study contributes immensely to our understanding of plastic deformation, fragmentation, and earthquakes. So far, little is known about the role of shear strain in 2D materials. Here we show some evidence of two-dimensional slip avalanches in exfoliated rhombohedral MoS2, triggered by shear strain near t… ▽ More Slip avalanches are ubiquitous phenomena occurring in 3D materials under shear strain and their study contributes immensely to our understanding of plastic deformation, fragmentation, and earthquakes. So far, little is known about the role of shear strain in 2D materials. Here we show some evidence of two-dimensional slip avalanches in exfoliated rhombohedral MoS2, triggered by shear strain near the threshold level. Utilizing interfacial polarization in 3R-MoS2, we directly probe the stacking order in multilayer flakes and discover a wide variety of polarization domains with sizes following a power-law distribution. These findings suggest slip avalanches can occur during the exfoliation of 2D materials, and the stacking orders can be changed via shear strain. Our observation has far-reaching implications for develo** new materials and technologies, where precise control over the atomic structure of these materials is essential for optimizing their properties as well as for our understanding of fundamental physical phenomena. △ Less

Submitted 21 June, 2023; originally announced June 2023.

Comments: To be published in Nano Letters

Cross-Examination of Photoinitiated Carrier and Structural Dynamics of Black Phosphorus at Elevated Fluences

Authors: Mazhar Chebl, Xing He, Ding-Shyue Yang

Abstract: Revived attention in black phosphorus (bP) has been tremendous in the past decade. While many photoinitiated experiments have been conducted, a cross-examination of bP's photocarrier and structural dynamics is still lacking. In this report, we provide such analysis by examining time-resolved data acquired using optical transient reflectivity and reflection ultrafast electron diffraction, two compl… ▽ More Revived attention in black phosphorus (bP) has been tremendous in the past decade. While many photoinitiated experiments have been conducted, a cross-examination of bP's photocarrier and structural dynamics is still lacking. In this report, we provide such analysis by examining time-resolved data acquired using optical transient reflectivity and reflection ultrafast electron diffraction, two complementary methods under the same experimental conditions. At elevated excitation fluences, we find that more than 90% of the photoinjected carriers are annihilated within the first picosecond (ps) and transfer their energy to phonons in a nonthermal, anisotropic fashion. Electronically, the remaining carrier density around the band edges induces a significant interaction that leads to an interlayer lattice contraction in a few ps but soon diminishes as a result of the continuing loss of carriers. Structurally, phonon-phonon scattering redistributes the energy in the lattice and results in the generation of out-of-plane coherent acoustic phonons and thermal lattice expansion. Their onset times at ~6 ps are found to be in good agreement. Later, a thermalized quasi-equilibrium state is reached following a period of about 40-50 ps. Hence, we propose a picture with five temporal regimes for bP's photodynamics. △ Less

Submitted 22 May, 2023; v1 submitted 26 April, 2023; originally announced April 2023.

Comments: 16 pages, 4 figures for the main text

Highly Tunable Intrinsic Exchange Bias from Interfacial Reconstruction in Epitaxial NixCoyFe3-x-yO4(111)/α-Al2O3(0001) Thin Films

Authors: Detian Yang, Arjun Subedi, Chao Liu, Haile Ambaye, Valeria Lauter, Yaohua Liu, Peter A. Dowben, Xiaoshan Xu

Abstract: Intrinsic exchange bias up to 12.6 kOe is observed in NixCoyFe3-x-yO4(111)/α-Al2O3(0001) (0<=x+y<=3) epitaxial thin films where 0.15<=y<=2. An interfacial layer of rock-salt structure emerges between NixCoyFe3-x-yO4 thin films and α-Al2O3 substrates and is proposed as the antiferromagnetic layer unidirectionally coupled with ferrimagnetic NixCoyFe3-x-yO4. In NiCo2O4(111)/α-Al2O3(0001) films, resul… ▽ More Intrinsic exchange bias up to 12.6 kOe is observed in NixCoyFe3-x-yO4(111)/α-Al2O3(0001) (0<=x+y<=3) epitaxial thin films where 0.15<=y<=2. An interfacial layer of rock-salt structure emerges between NixCoyFe3-x-yO4 thin films and α-Al2O3 substrates and is proposed as the antiferromagnetic layer unidirectionally coupled with ferrimagnetic NixCoyFe3-x-yO4. In NiCo2O4(111)/α-Al2O3(0001) films, results of reflection high energy electron diffraction, X-ray photoelectron spectroscopy, X-ray reflectometry, and polarized neutron reflectometry support that the interfacial layer is antiferromagnetic NixCo1-xO (0.32<=x<=0.49) of rock-salt structure; the interfacial layer and exchange bias can be controlled by growth oxygen pressure revealing the key role of oxygen in the mechanism of the interfacial reconstruction. This work establishes a family of intrinsic exchange bias materials with great tunability by stoichiometry and growth parameters and emphasizes the strategy of interface engineering in controlling material functionalities. △ Less

Submitted 29 March, 2023; v1 submitted 25 February, 2023; originally announced February 2023.

Comments: Main Text: 14 pages, 5 figures; Supplemental Materials: 12 pages, 11 figures

Surface acoustic wave generation and detection in quantum paraelectric regime of SrTiO$_3$-based heterostructure

Authors: Dengyu Yang, Muqing Yu, Yun-Yi Pai, Patrick Irvin, Hyungwoo Lee, Kitae Eom, Chang-Beom Eom, Jeremy Levy

Abstract: Strontium titanate (STO), apart from being a ubiquitous substrate for complex-oxide heterostructures, possesses a multitude of strongly-coupled electronic and mechanical properties. Surface acoustic wave (SAW) generation and detection offers insight into electromechanical couplings that are sensitive to quantum paraelectricity and other structural phase transitions. Propagating SAWs can interact w… ▽ More Strontium titanate (STO), apart from being a ubiquitous substrate for complex-oxide heterostructures, possesses a multitude of strongly-coupled electronic and mechanical properties. Surface acoustic wave (SAW) generation and detection offers insight into electromechanical couplings that are sensitive to quantum paraelectricity and other structural phase transitions. Propagating SAWs can interact with STO-based electronic nanostructures, in particular LaAlO$_3$/SrTiO$_3$ (LAO/STO). Here we report generation and detection of SAW within LAO/STO heterointerfaces at cryogenic temperatures ($T\ge$~2 K) using superconducting interdigitated transducers (IDTs). The temperature dependence shows an increase in the SAWs quality factor that saturates at $T\approx 8 $ K. The effect of backgate tuning on the SAW resonance frequency shows the possible acoustic coupling with the ferroelastic domain wall evolution. This method of generating SAWs provides a pathway towards dynamic tuning of ferroelastic domain structures, which are expected to influence electronic properties of complex-oxide nanostructures. Devices which incorporate SAWs may in turn help to elucidate the role of ferroelastic domain structures in mediating electronic behavior. △ Less

Submitted 12 January, 2023; originally announced January 2023.

Superconductivity in an Orbital-reoriented SnAs Square Lattice: a Case Study of Li0.6Sn2As2 and NaSnAs

Authors: Junjie Wang, Tian** Ying, Jun Deng, Cuiying Pei, Tongxu Yu, Xu Chen, Yimin Wan, Mingzhang Yang, Weiyi Dai, Dongliang Yang, Yanchun Li, Shiyan Li, Soshi Iimura, Shixuan Du, Hideo Hosono, Yanpeng Qi, Jian-gang Guo

Abstract: Searching for functional square lattices in layered superconductor systems offers an explicit clue to modify the electron behavior and find exotic properties. The trigonal SnAs3 structural units in SnAs-based systems are relatively conformable to distortion, which provides the possibility to achieve structurally topological transformation and higher superconducting transition temperatures. In the… ▽ More Searching for functional square lattices in layered superconductor systems offers an explicit clue to modify the electron behavior and find exotic properties. The trigonal SnAs3 structural units in SnAs-based systems are relatively conformable to distortion, which provides the possibility to achieve structurally topological transformation and higher superconducting transition temperatures. In the present work, the functional As square lattice was realized and activated in Li0.6Sn2As2 and NaSnAs through a topotactic structural transformation of trigonal SnAs3 to square SnAs4 under pressure, resulting in a record-high Tc among all synthesized SnAs-based compounds. Meanwhile, the conductive channel transfers from the out-of-plane pz orbital to the in-plane px+py orbitals, facilitating electron hop** within the square 2D lattice and boosting the superconductivity. The reorientation of p-orbital following a directed local structure transformation provides an effective strategy to modify layered superconductors. △ Less

Submitted 9 January, 2023; originally announced January 2023.

Comments: 6 pages,4 figures, Accepted by Angew. Chem. Int. Ed

Metastable and Unstable Dynamics in multi-phase lattice Boltzmann

Authors: Matteo Lulli, Luca Biferale, Giacomo Falcucci, Mauro Sbragaglia, Dong Yang, Xiaowen Shan

Abstract: We quantitatively characterize the metastability in a multi-phase lattice Boltzmann model. The structure factor of density fluctuations is theoretically obtained and numerically verified to a high precision, for all simulated wave-vectors and reduced temperatures. The static structure factor is found to consistently diverge as the temperature approaches the critical-point or the density approaches… ▽ More We quantitatively characterize the metastability in a multi-phase lattice Boltzmann model. The structure factor of density fluctuations is theoretically obtained and numerically verified to a high precision, for all simulated wave-vectors and reduced temperatures. The static structure factor is found to consistently diverge as the temperature approaches the critical-point or the density approaches the spinodal line at a sub-critical temperature. Theoretically predicted critical exponents are observed in both cases. Finally, the phase separation in the unstable branch follows the same pattern, i.e. the generation of interfaces with different topology, as observed in molecular dynamics simulations. All results can be independently reproduced through the ``idea.deploy" framework https://github.com/lullimat/idea.deploy △ Less

Submitted 18 December, 2022; v1 submitted 15 December, 2022; originally announced December 2022.

Comments: 5 pages, 3 figures, added Supplemental Material in ancillary files

Ultrafast response of spontaneous photovoltaic effect in 3R-MoS2-based heterostructures

Authors: **gda Wu, Dongyang Yang, **g Liang, Max Werner, Evgeny Ostroumov, Yunhuan Xiao, Kenji Watanabe, Takashi Taniguchi, Jerry I. Dadap, David Jones, Ziliang Ye

Abstract: Rhombohedrally stacked MoS2 has been shown to exhibit spontaneous polarization down to the bilayer limit and can sustain a strong depolarization field when sandwiched between graphene. Such a field gives rise to a spontaneous photovoltaic effect without needing any p-n junction. In this work, we show the photovoltaic effect has an external quantum efficiency of 10\% for devices with only two atomi… ▽ More Rhombohedrally stacked MoS2 has been shown to exhibit spontaneous polarization down to the bilayer limit and can sustain a strong depolarization field when sandwiched between graphene. Such a field gives rise to a spontaneous photovoltaic effect without needing any p-n junction. In this work, we show the photovoltaic effect has an external quantum efficiency of 10\% for devices with only two atomic layers of MoS2 at low temperatures, and identify a picosecond-fast photocurrent response, which translates to an intrinsic device bandwidth at ~ 100-GHz level. To this end, we have developed a non-degenerate pump-probe photocurrent spectroscopy technique to deconvolute the thermal and charge-transfer processes, thus successfully revealing the multi-component nature of the photocurrent dynamics. The fast component approaches the limit of the charge-transfer speed at the graphene-MoS2 interface. The remarkable efficiency and ultrafast photoresponse in the graphene-3R-MoS2 devices support the use of ferroelectric van der Waals materials for future high-performance optoelectronic applications. △ Less

Submitted 12 November, 2022; originally announced November 2022.

Comments: To be published in Science Advances

Strong Coupling of Self-Trapped Excitons to Acoustic Phonons in Bismuth Perovskite $\textrm{Cs}_{3}\textrm{Bi}_{2}\textrm{I}_{9}$

Authors: Xing He, Naveen Kumar Tailor, Soumitra Satapathi, Jakoah Brgoch, Ding-Shyue Yang

Abstract: To assess the potential optoelectronic applications of metal-halide perovskites, it is critical to have a detailed understanding of the nature, strength, and dynamics of the interactions between carriers and the polar lattices. Here, we report the electronic and structural dynamics of bismuth-based perovskite $\textrm{Cs}_{3}\textrm{Bi}_{2}\textrm{I}_{9}$ revealed by transient reflectivity and ult… ▽ More To assess the potential optoelectronic applications of metal-halide perovskites, it is critical to have a detailed understanding of the nature, strength, and dynamics of the interactions between carriers and the polar lattices. Here, we report the electronic and structural dynamics of bismuth-based perovskite $\textrm{Cs}_{3}\textrm{Bi}_{2}\textrm{I}_{9}$ revealed by transient reflectivity and ultrafast electron diffraction. A cross-examination of these experimental results combined with theoretical analyses allows the identification of the major carrier-phonon coupling mechanism and the associated time scales. It is found that carriers photoinjected into $\textrm{Cs}_{3}\textrm{Bi}_{2}\textrm{I}_{9}$ form self-trapped excitons on an ultrafast time scale. However, they retain most of their energy and their coupling to Fröhlich-type optical phonons is limited at early times. Instead, the long-lived excitons exert an electronic stress via deformation potential and develop a prominent, sustaining strain field as coherent acoustic phonons in 10 ps. From sub-ps to ns and beyond, a similar extent of the atomic displacements is found throughout the different stages of structural distortions, from limited local modulations to a coherent strain field to the Debye-Waller random atomic motions on longer times. The current results suggest the potential use of bismuth-based perovskites for applications other than photovoltaics to take advantage of carriers' stronger self-trap** and long lifetime. △ Less

Submitted 27 October, 2022; originally announced October 2022.

Comments: 21 pages, 4 figures for the main text

Phonon-limited carrier mobilities and Hall factors in 4H-SiC from first principles

Authors: Tianqi Deng, Deren Yang, Xiaodong Pi

Abstract: Charge carrier mobility is at the core of semiconductor materials and devices optimization, and Hall measurement is one of the most important techniques for its characterization. The Hall factor, defined as the ratio between Hall and drift mobilities, is of particular importance. Here we study the effect of anisotropy by computing the drift and Hall mobility tensors of a technologically important… ▽ More Charge carrier mobility is at the core of semiconductor materials and devices optimization, and Hall measurement is one of the most important techniques for its characterization. The Hall factor, defined as the ratio between Hall and drift mobilities, is of particular importance. Here we study the effect of anisotropy by computing the drift and Hall mobility tensors of a technologically important wide-band-gap semiconductor, 4H-silicon carbide (4H-SiC) from first principles. With $GW$ electronic structure and \textit{ab initio} electron-phonon interactions, we solve the Boltzmann transport equation without fitting parameters. The calculated electron and hole mobilities agree with experimental data. The electron Hall factor strongly depends on the direction of external magnetic field $\mathbf{B}$, and the hole Hall factor exhibits different temperature dependency for $\mathbf{B}\parallel c$ and $\mathbf{B}\perp c$. We explain this by the different equienergy surface shape arising from the anisotropic and non-parabolic band structure, together with the energy-dependent electron-phonon scattering. △ Less

Submitted 6 October, 2022; originally announced October 2022.

Comments: 24 pages, 8 figures

Optically probing the asymmetric interlayer coupling in rhombohedral-stacked MoS2 bilayer

Authors: **g Liang, Dongyang Yang, **gda Wu, Jerry I Dadap, Kenji Watanabe, Takashi Taniguchi, Ziliang Ye

Abstract: The interlayer coupling is emerging as a new parameter for tuning the physical properties of two-dimensional (2D) van der Waals materials. When two identical semiconductor monolayers are stacked with a twist angle, the periodic interlayer coupling modulation due to the moiré superlattice may endow exotic physical phenomena, such as moiré excitons and correlated electronic phases. To gain insight i… ▽ More The interlayer coupling is emerging as a new parameter for tuning the physical properties of two-dimensional (2D) van der Waals materials. When two identical semiconductor monolayers are stacked with a twist angle, the periodic interlayer coupling modulation due to the moiré superlattice may endow exotic physical phenomena, such as moiré excitons and correlated electronic phases. To gain insight into these new phenomena, it is crucial to unveil the underlying coupling between atomic layers. Recently, the rhombohedral-stacked transition metal dichalcogenide (TMD) bilayer has attracted significant interest because of the emergence of an out-of-plane polarization from non-ferroelectric monolayer constituents. However, as a key parameter responsible for the physical properties, the interlayer coupling and its relationship with ferroelectricity in them remain elusive. Here we probe the asymmetric interlayer coupling between the conduction band of one layer and the valence band from the other layer in a 3R-MoS2 bilayer, which can be understood as a result of a layer-dependent Berry phase winding. By performing optical spectroscopy in a dual-gated device, we show a type-II band alignment exists at K points in the 3R-MoS2 bilayer. Furthermore, by unraveling various contributions to the band offset, we quantitatively determine the asymmetric interlayer coupling and spontaneous polarization in 3R-MoS2. △ Less

Submitted 14 September, 2022; originally announced September 2022.

Comments: To be published in Physical Review X

A graph model for the clustering of dark matter halos

Authors: Daneng Yang, Hai-Bo Yu

Abstract: We use network theory to study topological features in the hierarchical clustering of dark matter halos. We use public halo catalogs from cosmological N-body simulations and construct tree graphs that connect halos within main halo systems. Our analysis shows these graphs exhibit a power-law degree distribution with an exponent of $-2$, and possess scale-free and self-similar properties according… ▽ More We use network theory to study topological features in the hierarchical clustering of dark matter halos. We use public halo catalogs from cosmological N-body simulations and construct tree graphs that connect halos within main halo systems. Our analysis shows these graphs exhibit a power-law degree distribution with an exponent of $-2$, and possess scale-free and self-similar properties according to the criteria of graph metrics. We propose a random graph model with preferential attachment kernels, which effectively incorporate the effects of minor mergers, major mergers, and tidal strip**. The model reproduces the structural, topological properties of simulated halo systems, providing a new way of modeling complex gravitational dynamics of structure formation. △ Less

Submitted 9 November, 2023; v1 submitted 11 June, 2022; originally announced June 2022.

Comments: 12 pages, 10 figures; significantly expanded for clarification; results are strengthened and conclusions unchanged; accepted for publication in Physical Review Research

Journal ref: Phys.Rev.Res. 5 (2023) 4, 043187

Topological Interface-State Lasing in a Polymer-Cholesteric Liquid Crystal Superlattice

Authors: Yu Wang, Donghao Yang, Shaohua Gao, Xinzheng Zhang, Irena Drevensek-Olenik, Qiang Wu, Marouen Chemingui, Zhigang Chen, **gjun Xu

Abstract: The advance of topological photonics has heralded a revolution for manipulating light as well as for the development of novel photonic devices such as topological insulator lasers. Here, we demonstrate topological lasing of circular polarization in a polymer-cholesteric liquid crystal (P-CLC) superlattice, tunable in the visible wavelength regime. By use of the femtosecond-laser direct-writing and… ▽ More The advance of topological photonics has heralded a revolution for manipulating light as well as for the development of novel photonic devices such as topological insulator lasers. Here, we demonstrate topological lasing of circular polarization in a polymer-cholesteric liquid crystal (P-CLC) superlattice, tunable in the visible wavelength regime. By use of the femtosecond-laser direct-writing and self-assembling techniques, we establish the P-CLC superlattice with a controlled mini-band structure and a topological interface defect, thereby achieving a low threshold for robust topological lasing at about 0.4 uJ. Thanks to the chiral liquid crystal, not only the emission wavelength is thermally tuned, but the circularly polarized lasing is readily achieved. Our results bring about the possibility to realize compact and integrated topological photonic devices at low cost, as well as to engineer an ideal platform for exploring topological physics that involves light-matter interaction in soft-matter environments. △ Less

Submitted 13 May, 2022; originally announced May 2022.

Comments: 14 pages, 4 figures

Refinements for Bragg coherent X-ray diffraction imaging: Electron backscatter diffraction alignment and strain field computation

Authors: David Yang, Mark T. La**ton, Guanze He, Kay Song, Minyi Zhang, Clara Barker, Ross J. Harder, Wonsuk Cha, Wenjun Liu, Nicholas W. Phillips, Felix Hofmann

Abstract: Bragg coherent X-ray diffraction imaging (BCDI) allows the three-dimensional (3D) measurement of lattice strain along the scattering vector for specific microcrystals. If at least three linearly independent reflections are measured, the 3D variation of the full lattice strain tensor within the microcrystal can be recovered. However, this requires knowledge of the crystal orientation, which is typi… ▽ More Bragg coherent X-ray diffraction imaging (BCDI) allows the three-dimensional (3D) measurement of lattice strain along the scattering vector for specific microcrystals. If at least three linearly independent reflections are measured, the 3D variation of the full lattice strain tensor within the microcrystal can be recovered. However, this requires knowledge of the crystal orientation, which is typically attained via estimates based on crystal geometry or synchrotron micro-beam Laue diffraction measurements. Here, we present an alternative method to determine the crystal orientation for BCDI measurements, by using electron backscatter diffraction (EBSD) to align Fe-Ni and Co-Fe alloy microcrystals on three different substrates. The orientation matrix is calculated from EBSD Euler angles and compared to the orientation determined using micro-beam Laue diffraction. The average angular mismatch between the orientation matrices is less than ~6 degrees, which is reasonable for the search for Bragg reflections. We demonstrate the use of an orientation matrix derived from EBSD to align and measure five reflections for a single Fe-Ni microcrystal using multi-reflection BCDI. Using this dataset, a refined strain field computation based on the gradient of the complex exponential of the phase is developed. This approach is shown to increase accuracy, especially in the presence of dislocations. Our results demonstrate the feasibility of using EBSD to pre-align BCDI samples and the application of more efficient approaches to determine the lattice strain tensor with greater accuracy. △ Less

Submitted 2 October, 2022; v1 submitted 31 March, 2022; originally announced March 2022.

Comments: 39 pages, 12 figures

Journal ref: J. Appl. Cryst. (2022). 55, 1184-119

Photonic spin Hall effect from quantum kinetic theory in curved spacetime

Authors: Kazuya Mameda, Naoki Yamamoto, Di-Lun Yang

Abstract: Based on quantum field theory, we formulate the Wigner function and quantum kinetic theory for polarized photons in curved spacetimes which admit a covariantly constant timelike vector. From this framework, the photonic chiral/zilch vortical effects are reproduced in a rigidly rotating coordinate. In a spatially inhomogeneous coordinate, we derive the spin Hall effect for the photon helicity curre… ▽ More Based on quantum field theory, we formulate the Wigner function and quantum kinetic theory for polarized photons in curved spacetimes which admit a covariantly constant timelike vector. From this framework, the photonic chiral/zilch vortical effects are reproduced in a rigidly rotating coordinate. In a spatially inhomogeneous coordinate, we derive the spin Hall effect for the photon helicity current and energy current in equilibrium. Our derivation reveals that such photonic Hall effect are related to the photonic vortical effect via the Lorentz invariance and their transport coefficients match each other. △ Less

Submitted 18 May, 2022; v1 submitted 16 March, 2022; originally announced March 2022.

Comments: 18 pages

Report number: RIKEN-QHP-494

Journal ref: Phys. Rev. D 105, 096019 (2022)

Ultrafast carrier-coupled interlayer contraction, coherent intralayer motions, and phonon thermalization dynamics of black phosphorus

Authors: Mazhar Chebl, Xing He, Ding-Shyue Yang

Abstract: Black phosphorus (BP) exhibits highly anisotropic properties and dynamical behavior that are unique even among two-dimensional and van der Waals (vdW) layered materials. Here, we show that an interlayer lattice contraction and concerted, symmetric intralayer vibrations take place concurrently within few picoseconds following the photoinjection and relaxation of carriers, using ultrafast electron d… ▽ More Black phosphorus (BP) exhibits highly anisotropic properties and dynamical behavior that are unique even among two-dimensional and van der Waals (vdW) layered materials. Here, we show that an interlayer lattice contraction and concerted, symmetric intralayer vibrations take place concurrently within few picoseconds following the photoinjection and relaxation of carriers, using ultrafast electron diffraction in the reflection geometry to probe the out-of-plane motions. A strong coupling between the photocarriers and BP's puckered structure, with the alignment of the electronic band structure, is at work for such directional atomic motions without a photoinduced phase transition. Three temporal regimes can be identified for the phonon thermalization dynamics where a quasi-equilibrium without anisotropy is reached in about 50 ps, followed by propagation of coherent acoustic phonons and heat diffusion into the bulk. The early-time out-of-plane dynamics reported here have important implications for single- and few-layer BP and other vdW materials with strong electronic-lattice correlations. △ Less

Submitted 9 March, 2022; originally announced March 2022.

Comments: 16 pages, 5 figures

Recent Progress of Heterostructures Based on Two Dimensional Materials and Wide Bandgap Semiconductors

Authors: Ying Liu, Yanjun Fang, Deren Yang, Xiaodong Pi, Peijian Wang

Abstract: Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid the foundation for various applications of atomically thin layer films. These 2D materials possess rich and diverse properties such as layer-dependent band gaps, interesting spin degrees of freedom, and variable crystal structures. They exhibit broad application prospects in micro-nano devices. In the meantime… ▽ More Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid the foundation for various applications of atomically thin layer films. These 2D materials possess rich and diverse properties such as layer-dependent band gaps, interesting spin degrees of freedom, and variable crystal structures. They exhibit broad application prospects in micro-nano devices. In the meantime, the wide bandgap semiconductors (WBS) with an elevated breakdown voltage, high mobility, and high thermal conductivity have shown important applications in high-frequency microwave devices, high-temperature and high-power electronic devices. Beyond the study on single 2D materials or WBS materials, the multi-functional 2D/WBS heterostructures can promote the carrier transport at the interface, potentially providing novel physical phenomena and applications, and improving the performance of electronic and optoelectronic devices. In this review, we overview the advantages of the heterostructures of 2D materials and WBS materials, and introduce the construction methods of 2D/WBS heterostructures. Then, we present the diversity and recent progress in the applications of 2D/WBS heterostructures, including photodetectors, photocatalysis, sensors, and energy related devices. Finally, we put forward the current challenges of 2D/WBS heterostructures and propose the promising research directions in the future. △ Less

Submitted 8 March, 2022; originally announced March 2022.

Towards Wafer-Scale Production of TwoDimensional Transition Metal Chalcogenides

Authors: Peijian Wang, Deren Yang, Xiaodong Pi

Abstract: Two-dimensional (2D) Transition Metal Chalcogenides (TMCs) have attracted tremendous interest from both the scientific and technological communities due to their variety of properties and superior tunability through layer number, composition, and interface engineering. Wafer-scale production of 2D TMCs is critical to the industrial applications of these materials. Extensive efforts have been besto… ▽ More Two-dimensional (2D) Transition Metal Chalcogenides (TMCs) have attracted tremendous interest from both the scientific and technological communities due to their variety of properties and superior tunability through layer number, composition, and interface engineering. Wafer-scale production of 2D TMCs is critical to the industrial applications of these materials. Extensive efforts have been bestowed to the large-area growth of 2D TMCs through various approaches. In this review, recent advances in obtaining large-area 2D TMCs by different methods such as chemical vapor deposition (CVD), metal-organic CVD, physical vapor deposition are firstly highlighted and their advantages and disadvantages are also evaluated. Then strategies for the control of the grains, morphology, layer number and phase to achieve controllable and uniform thicknesses and large crystal domains for 2D TMCs are discussed. Applications of large-area 2D TMCs in electronics, optoelectronics, spintronics etc. are also introduced. Finally, ideas and prospects for the future developments of wafer-scale 2D TMCs are provided. △ Less

Submitted 8 March, 2022; originally announced March 2022.

Spontaneous Polarization Induced Photovoltaic Effect In Rhombohedrally Stacked MoS$_2$

Authors: Dongyang Yang, **gda Wu, Benjamin T. Zhou, **g Liang, Toshiya Ideue, Teri Siu, Kashif Masud Awan, Kenji Watanabe, Takashi Taniguchi, Yoshihiro Iwasa, Marcel Franz, Ziliang Ye

Abstract: Stacking order in van der Waals materials determines the coupling between atomic layers and is therefore key to the materials' properties. By exploring different stacking orders, many novel physical phenomena have been realized in artificial vdW stacks. Recently, 2D ferroelectricity has been observed in zero-degree aligned hBN and graphene-hBN heterostructures, holding promise in a range of electr… ▽ More Stacking order in van der Waals materials determines the coupling between atomic layers and is therefore key to the materials' properties. By exploring different stacking orders, many novel physical phenomena have been realized in artificial vdW stacks. Recently, 2D ferroelectricity has been observed in zero-degree aligned hBN and graphene-hBN heterostructures, holding promise in a range of electronic applications. In those artificial stacks, however, the single domain size is limited by the stacking-angle misalignment to about 0.1 to 1 $μ$m, which is incompatible with most optical or optoelectronic applications. Here we show MoS$_2$ in the rhombohedral phase can host a homogeneous spontaneous polarization throughout few-$μ$m-sized exfoliated flakes, as it is a natural crystal requiring no stacking and is, therefore free of misalignment. Utilizing this homogeneous polarization and its induced depolarization field (DEP), we build a graphene-MoS$_2$ based photovoltaic device with high efficiency. The few-layer MoS$_2$ is thinner than most oxide-based ferroelectric films, which allows us to maximize the DEP and study its impact at the atomically thin limit, while the highly uniform polarization achievable in the commensurate crystal enables a tangible path for up-scaling. The external quantum efficiency of our device is up to 16% at room temperature, over one order larger than the highest efficiency observed in bulk photovoltaic devices, owing to the reduced screening in graphene, the exciton-enhanced light-matter interaction, and the ultrafast interlayer relaxation in MoS$_2$. In view of the wide range of bandgap energy in other TMDs, our findings make rhombohedral TMDs a promising and versatile candidate for applications such as energy-efficient photo-detection with high speed and programmable polarity. △ Less

Submitted 4 March, 2022; originally announced March 2022.

Comments: 20 pages, 6 figures

Suppression of ferromagnetism and influence of disorder in silicon-substituted CeRh6Ge4

Authors: Y. J. Zhang, Z. Y. Nie, R. Li, Y. C. Li, D. L. Yang, B. Shen, C. Ye, H. Su, R. Shi, S. Y. Wang, F. Steglich, M. Smidman, H. Q. Yuan

Abstract: We report a study of isoelectronic chemical substitution in the recently discovered quantum critical ferromagnet CeRh$_6$Ge$_4$. Upon silicon-do**, the ferromagnetic ordering temperature of CeRh$_6$(Ge$_{1-x}$Si$_x$)$_4$ is continuously suppressed, and no transition is observed beyond $x_c$$\approx$0.125. Non-Fermi liquid behavior with $C/T \propto$log($T^*/T$) is observed close to $x_c$, indica… ▽ More We report a study of isoelectronic chemical substitution in the recently discovered quantum critical ferromagnet CeRh$_6$Ge$_4$. Upon silicon-do**, the ferromagnetic ordering temperature of CeRh$_6$(Ge$_{1-x}$Si$_x$)$_4$ is continuously suppressed, and no transition is observed beyond $x_c$$\approx$0.125. Non-Fermi liquid behavior with $C/T \propto$log($T^*/T$) is observed close to $x_c$, indicating the existence of strong quantum fluctuations, while the $T$-linear behavior observed upon pressurizing the parent compound is absent in the resistivity, which appears to be a consequence of the disorder induced by silicon do**. Our findings provide evidence for the role played by disorder on the unusual ferromagnetic quantum criticality in CeRh$_6$Ge$_4$, and provides further evidence for understanding the origin of this behavior. △ Less

Submitted 28 February, 2022; originally announced February 2022.

Nitrogen decoration of basal plane dislocations in 4H-SiC

Authors: Jiajun Li, Hao Luo, Guang Yang, Yiqiang Zhang, Xiaodong Pi, Deren Yang, Rong Wang

Abstract: Basal-plane dislocations (BPDs) pose a great challenge to the reliability of bipolar power devices based on the 4H silicon carbide (4H-SiC). It is well established that heavy nitrogen (N) do** promotes the conversion of BPDs to threading edge dislocations (TEDs) and improves the reliability of 4H-SiC-based bipolar power devices. However, the interaction between N and BPDs, and the effect of N on… ▽ More Basal-plane dislocations (BPDs) pose a great challenge to the reliability of bipolar power devices based on the 4H silicon carbide (4H-SiC). It is well established that heavy nitrogen (N) do** promotes the conversion of BPDs to threading edge dislocations (TEDs) and improves the reliability of 4H-SiC-based bipolar power devices. However, the interaction between N and BPDs, and the effect of N on the electronic properties of BPDs are still ambiguous, which significantly hinder the understanding on the electron-transport mechanism of 4H-SiC-based bipolar power devices. Combining molten-alkali etching and the Kelvin probe force microscopy (KPFM) analysis, we demonstrate that BPDs create acceptor-like states in undoped 4H-SiC, while acting as donors in N-doped 4H-SiC. First-principles calculations verify that BPDs create occupied defect states above the valence band maximum (VBM) and unoccupied defect states under the conduction-band minimum (CBM) of undoped 4H-SiC. The electron transfer from the defect states of intrinsic defects and native impurities to the unoccupied defect states of BPDs gives rise to the acceptor-like behavior of BPDs in undoped 4H-SiC. Defect formation energies indicate that N atoms can spontaneously decorate BPDs during the N do** of 4H-SiC. The binding between N and BPD is strong against decomposition. The accumulation of N dopants at the core of BPDs results in the accumulation of donor-like states at the core of BPDs in N-doped 4H-SiC. This work not only enriches the understanding on the electronic behavior of BPDs in N-doped 4H-SiC, but also helps understand the electron transport mechanism of 4H-SiC-based bipolar power devices. △ Less

Submitted 12 May, 2022; v1 submitted 27 February, 2022; originally announced February 2022.

Comments: 20 pages, 5 figures

Journal ref: Phys. Rev. Applied 17, 054011(2022)

Nanoscale control of the metal-insulator transition at LAO/KTO (110) and LAO/KTO (111) interfaces

Authors: Muqing Yu, Changjiang Liu, Dengyu Yang, Xi Yan, Qianheng Du, Dillon D. Fong, Anand Bhattacharya, Patrick Irvin, Jeremy Levy

Abstract: Recent reports of superconductivity at KTaO3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO3 (STO)-based heterostructures. Here we report nanoscale control of the metal-to-insulator transition at the LaAlO3/KTO (110) and (111) interfaces.… ▽ More Recent reports of superconductivity at KTaO3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO3 (STO)-based heterostructures. Here we report nanoscale control of the metal-to-insulator transition at the LaAlO3/KTO (110) and (111) interfaces. Devices are created using two distinct methods previously developed for STO-based heterostructures: (1) conductive atomic-force microscopy lithography and (2) ultra-low-voltage electron-beam lithography. At low temperatures, KTO-based devices show superconductivity that is tunable by an applied back gate. A nanowire device shows single-electron-transistor (SET) behavior. These reconfigurable methods of creating nanoscale devices in KTO-based heterostructures offer new avenues for investigating mechanisms of superconductivity as well as development of quantum devices that incorporate strong spin-orbit interactions, superconducting behavior, and nanoscale dimensions. △ Less

Submitted 7 January, 2022; originally announced January 2022.

Comments: 19 pages, 9 figures

Journal ref: Nano Letters 22, 15, 6062-6068 (2022)

In situ Bragg coherent X-ray diffraction imaging of corrosion in a Co-Fe alloy microcrystal

Authors: David Yang, Nicholas W. Phillips, Kay Song, Clara Barker, Ross J. Harder, Wonsuk Cha, Wenjun Liu, Felix Hofmann

Abstract: Corrosion is a major concern for many industries, as corrosive environments can induce structural and morphological changes that lead to material dissolution and accelerate material failure. The progression of corrosion depends on nanoscale morphology, stress, and defects present. Experimentally monitoring this complex interplay is challenging. Here we implement in situ Bragg coherent X-ray diffra… ▽ More Corrosion is a major concern for many industries, as corrosive environments can induce structural and morphological changes that lead to material dissolution and accelerate material failure. The progression of corrosion depends on nanoscale morphology, stress, and defects present. Experimentally monitoring this complex interplay is challenging. Here we implement in situ Bragg coherent X-ray diffraction imaging (BCDI) to probe the dissolution of a Co-Fe alloy microcrystal exposed to hydrochloric acid (HCl). By measuring five Bragg reflections from a single isolated microcrystal at ambient conditions, we compare the full three-dimensional (3D) strain state before corrosion and the strain along the [111] direction throughout the corrosion process. We find that the strained surface layer of the crystal dissolves to leave a progressively less strained surface. Interestingly, the average strain closer to the centre of the crystal increases during the corrosion process. We determine the localised corrosion rate from BCDI data, revealing the preferential dissolution of facets more exposed to the acid stream, highlighting an experimental geometry effect. These results bring new perspectives to understanding the interplay between crystal strain, morphology, and corrosion; a prerequisite for the design of more corrosion-resistant materials. △ Less

Submitted 27 January, 2022; v1 submitted 15 November, 2021; originally announced November 2021.

Comments: 10 pages, 11 figures

Thickness dependent dark exciton emission in (PEA)2PbI4 nanoflake and its brightening by in-plane magnetic field

Authors: Wei Tang, Liting Tao, Tian Zhang, Yanjun Fang, Deren Yang, Linjun Li

Abstract: Halide perovskite materials raised tremendous interest in recent years since their cheap fabrication, superior performance in both solar cell and light emitting diode (LED). Due to the existence of layered quantum well structure, quasi two-dimensional(2D) halide perovskite has more intriguing spin related physics than its 3D counterpart. For instance, the detection and brightening of dark exciton… ▽ More Halide perovskite materials raised tremendous interest in recent years since their cheap fabrication, superior performance in both solar cell and light emitting diode (LED). Due to the existence of layered quantum well structure, quasi two-dimensional(2D) halide perovskite has more intriguing spin related physics than its 3D counterpart. For instance, the detection and brightening of dark exciton (DX) in 2D halide perovskite attracts much attention since these species can be used in opto-spintronic and quantum computing devices. Here, we report the gradually brightened emission of the DX at 2.33 eV with the thickness decreases in (PEA)2PbI4 single crystalline nanoflake, which hitherto has not been reported. By coupling with in-plane (IP) magnetic field in Voigt configuration, the DX emission can be sharply enhanced, while for the out-of-plane (OP) magnetic field in Faraday configuration, the DX emission has no noticeable change, which can be reconciled with the theory interpretation of magnetic field dependent wave function mixing between the four exciton states fi1, fi2, fi3- , fi3+. The emission of DX fi2 at 2.335 eV and the fine splitting of all the four states are observed in static PL spectroscopy for the first time. Our work thus clarifies the debating questions regarding to previous research on DX behavior in 2D halide perovskite material and sheds light on the road of realizing opto-spintronic or quantum computing devices with these materials. △ Less

Submitted 22 November, 2021; v1 submitted 15 November, 2021; originally announced November 2021.

Comments: 2nd version

Improving the do** efficiency of Al in 4H-SiC by co-do** group-IVB elements

Authors: Yuanchao Huang, Rong Wang, Yixiao Qian, Yiqiang Zhang, Deren Yang, Xiaodong Pi

Abstract: The p-type do** efficiency of 4H silicon carbide (4H-SiC) is rather low due to the large ionization energies of p-type dopants. Such an issue impedes the exploration of the full advantage of 4H-SiC for semiconductor devices. In this letter, we show that co-do** group-IVB elements effectively decreases the ionization energy of the most widely used p-type dopant, i. e., aluminum (Al), through th… ▽ More The p-type do** efficiency of 4H silicon carbide (4H-SiC) is rather low due to the large ionization energies of p-type dopants. Such an issue impedes the exploration of the full advantage of 4H-SiC for semiconductor devices. In this letter, we show that co-do** group-IVB elements effectively decreases the ionization energy of the most widely used p-type dopant, i. e., aluminum (Al), through the Coulomb repulsion between the energy levels of group-IVB elements and that of Al in 4H-SiC. Among group-IVB elements Ti has the most prominent effectiveness. Ti decreases the ionization energy of Al by nearly 50%, leading to a value as low as ~ 0.13 eV. As a result, the ionization rate of Al with Ti co-do** is up to ~ 5 times larger than that without co-do** at room temperature when the do** concentration is up to 1018 cm-3. This work may encourage the experimental co-do** of group-IB elements such as Ti and Al to significantly improve the p-type do** efficiency of 4H-SiC. △ Less

Submitted 21 April, 2021; originally announced April 2021.

Revisiting the third-order elastic constants of diamond: the higher-order effect

Authors: Mingqing Liao, Yong Liu, Yi Wang, Fei Zhou, Nan Qu, Tianyi Han, Danni Yang, Zhonghong Lai, Zi-Kui Liu, **gchuan Zhu

Abstract: In this letter, we study the higher-order effect on the third-order elastic constants (TOECs) of diamond using longitudinal stress-uniaxial strain (LSUS) approach based on density functional theory. The result shows that the higher-order effect on TOECs is not negligible in the shock wave experiments and similar calculations. By taking the higher-order elastic response (up to fifth order) into con… ▽ More In this letter, we study the higher-order effect on the third-order elastic constants (TOECs) of diamond using longitudinal stress-uniaxial strain (LSUS) approach based on density functional theory. The result shows that the higher-order effect on TOECs is not negligible in the shock wave experiments and similar calculations. By taking the higher-order elastic response (up to fifth order) into consideration, the convergence of TOECs against maximum stain gets improved significantly and resolves the discrepancy of several different theoretical methods and experiments. △ Less

Submitted 7 April, 2021; originally announced April 2021.

Comments: 9 pages, 3 figures, 2 tables

Helical magnetic effect and the chiral anomaly

Authors: Naoki Yamamoto, Di-Lun Yang

Abstract: In the presence of the fluid helicity $\boldsymbol{v} \cdot \boldsymbolω$, the magnetic field induces an electric current of the form $\boldsymbol{j} = C_{\rm HME} (\boldsymbol{v} \cdot \boldsymbolω) \boldsymbol{B}$. This is the helical magnetic effect (HME). We show that for massless Dirac fermions with charge $e=1$, the transport coefficient $C_{\rm HME}$ is fixed by the chiral anomaly coefficie… ▽ More In the presence of the fluid helicity $\boldsymbol{v} \cdot \boldsymbolω$, the magnetic field induces an electric current of the form $\boldsymbol{j} = C_{\rm HME} (\boldsymbol{v} \cdot \boldsymbolω) \boldsymbol{B}$. This is the helical magnetic effect (HME). We show that for massless Dirac fermions with charge $e=1$, the transport coefficient $C_{\rm HME}$ is fixed by the chiral anomaly coefficient $C=1/(2π^2)$ as $C_{\rm HME} = C/2$ independently of interactions. We show the conjecture that the coefficient of the magnetovorticity coupling for the local vector charge, $n = C_{B ω} \boldsymbol{B} \cdot \boldsymbolω$, is related to the chiral anomaly coefficient as $C_{B ω} = C/2$. We also discuss the condition for the emergence of the helical plasma instability that originates from the HME. △ Less

Submitted 4 June, 2021; v1 submitted 24 March, 2021; originally announced March 2021.

Comments: 13 pages; v2: published version

Journal ref: Phys. Rev. D 103, 125003 (2021)

Spin-orbit Torque Switching in an All-Van der Waals Heterostructure

Authors: Inseob Shin, Won Joon Cho, Eun-Su An, Sungyu Park, Hyeon-Woo Jeong, Seong Jang, Woon Joong Baek, Seong Yong Park, Dong-Hwan Yang, Jun Ho Seo, Gi-Yeop Kim, Mazhar N. Ali, Si-Young Choi, Hyun-Woo Lee, Jun Sung Kim, Sungdug Kim, Gil-Ho Lee

Abstract: Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency ($ξ$) and electrical conductivity ($σ$), and an efficient spin injection across a transparent interface. Herein, we use singl… ▽ More Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency ($ξ$) and electrical conductivity ($σ$), and an efficient spin injection across a transparent interface. Herein, we use single crystals of the van der Waals (vdW) topological semimetal WTe$_2$ and vdW ferromagnet Fe$_3$GeTe$_2$ to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of $ξ{\approx}4.6$ and $σ{\approx}2.25{\times}10^5 Ω^{-1} m^{-1}$ for WTe$_2$. Moreover, we obtain the significantly reduced switching current density of $3.90{\times}10^6 A/cm^2$ at 150 K, which is an order of magnitude smaller than those of conventional heavy-metal/ ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics. △ Less

Submitted 18 February, 2021; originally announced February 2021.

Comments: 19 pages, 4 figures

Colossal intrinsic exchange bias in epitaxial CoFe2O4/Al2O3 thin films

Authors: Detian Yang, Yu Yun, Arjun Subedi, Nicholas E. Rogers, David M. Cornelison, Peter A. Dowben, Xiaoshan Xu

Abstract: In this work, we demonstrate a massive intrinsic exchange bias (3 kOe) in epitaxial CoFe2O4(111) thin films deposited on Al2O3(0001) substrates. This exchange bias is indicative of intrinsic exchange or a ferromagnetic material combined with an antiferromagnet. The analysis of structure, magnetism and electronic states corroborate that there is an interfacial layer CoO between the CoFe2O4(111) thi… ▽ More In this work, we demonstrate a massive intrinsic exchange bias (3 kOe) in epitaxial CoFe2O4(111) thin films deposited on Al2O3(0001) substrates. This exchange bias is indicative of intrinsic exchange or a ferromagnetic material combined with an antiferromagnet. The analysis of structure, magnetism and electronic states corroborate that there is an interfacial layer CoO between the CoFe2O4(111) thin film and the Al2O3(0001) substrate. The power-law thickness dependence of the intrinsic exchange bias verifies its interfacial origin. This work suggests interfacial engineering can be an effective route for achieving large exchange bias. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Comments: 15 pages, 5 figures

Journal ref: Phys. Rev. B 103, 224405 (2021)

Wigner functions and quantum kinetic theory of polarized photons

Authors: Koichi Hattori, Yoshimasa Hidaka, Naoki Yamamoto, Di-Lun Yang

Abstract: We derive the Wigner functions of polarized photons in the Coulomb gauge with the $\hbar$ expansion applied to quantum field theory, and identify side-jump effects for massless photons. We also discuss the photonic chiral vortical effect for the Chern-Simons current and zilch vortical effect for the zilch current in local thermal equilibrium as a consistency check for our formalism. The results ar… ▽ More We derive the Wigner functions of polarized photons in the Coulomb gauge with the $\hbar$ expansion applied to quantum field theory, and identify side-jump effects for massless photons. We also discuss the photonic chiral vortical effect for the Chern-Simons current and zilch vortical effect for the zilch current in local thermal equilibrium as a consistency check for our formalism. The results are found to be in agreement with those obtained from different approaches. Moreover, using the real-time formalism, we construct the quantum kinetic theory (QKT) for polarized photons. By further adopting a specific power counting scheme for the distribution functions, we provide a more succinct form of an effective QKT. This photonic QKT involves quantum corrections associated with self-energy gradients in the collision term, which are analogous to the side-jump corrections pertinent to spin-orbit interactions in the chiral kinetic theory for massless fermions. The same theoretical framework can also be directly applied to weakly coupled gluons in the absence of background color fields. △ Less

Submitted 1 February, 2021; v1 submitted 26 October, 2020; originally announced October 2020.

Comments: 25 pages, no figures, minor revisions, journal version in JHEP

Report number: YITP-20-129, KEK-TH-2262, J-PARC-TH-0228, RIKEN-iTHEMS-Report-20

Selection of strain and fitting schemes for calculating higher-order elastic constants

Authors: Mingqing Liao, Yong Liu, Fei Zhou, Tianyi Han, Danni Yang, Nan Qu, Zhonghong Lai, Zi-Kui Liu, **gchuan Zhu

Abstract: Criteria of selecting strain and fitting schemes are proposed for the calculation of higher-order elastic constants more efficiently, robustly and accurately. As demonstrated by the third-order elastic constants (TOECs) of diamond, the proposed method is 3-5 times faster than existing methods, and the range of strain for getting correct TOECs is expanded. In addition, our result provides an eviden… ▽ More Criteria of selecting strain and fitting schemes are proposed for the calculation of higher-order elastic constants more efficiently, robustly and accurately. As demonstrated by the third-order elastic constants (TOECs) of diamond, the proposed method is 3-5 times faster than existing methods, and the range of strain for getting correct TOECs is expanded. In addition, our result provides an evidence for the inaccuracy of some previous experiments caused by higher-order effect, and the difference among experiments and several different theoretical methods is resolved. Finally, we give the recommend TOECs values for diamond. △ Less

Submitted 21 September, 2020; originally announced September 2020.

Nanoscale control of LaAlO3/SrTiO3 metal-insulator transition using ultra-low-voltage electron-beam lithography

Authors: Dengyu Yang, Shan Hao, Jun Chen, Qing Guo, Muqing Yu, Yang Hu, KiTae Eom, Jung-Woo Lee, Chang-Beom Eom, Patrick Irvin, Jeremy Levy

Abstract: We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography (ULV-EBL). Compared with previous reports that utilize conductive atomic-force-microscope lithography (c-AFM), this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x faster than c-AFM. The writing techniqu… ▽ More We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography (ULV-EBL). Compared with previous reports that utilize conductive atomic-force-microscope lithography (c-AFM), this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x faster than c-AFM. The writing technique is non-destructive and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods. △ Less

Submitted 29 August, 2020; originally announced August 2020.

Comments: 4 figures

Observation of transient and asymptotic driven structural states of tungsten exposed to irradiation

Authors: Daniel R. Mason, Suchandrima Das, Peter M. Derlet, Sergei L. Dudarev, Andrew London, Hongbing Yu, Nicholas W. Phillips, David Yang, Kenichiro Mizohata, Ruqing Xu, Felix Hofmann

Abstract: Combining spatially resolved X-ray Laue diffraction with atomic-scale simulations, we observe how ion-irradiated tungsten undergoes a series of non-linear structural transformations with increasing irradiation exposure. Nanoscale defect-induced deformations accumulating above 0.02 displacements per atom (dpa) lead to highly fluctuating strains at ~0.1 dpa, collapsing into a driven quasi-steady str… ▽ More Combining spatially resolved X-ray Laue diffraction with atomic-scale simulations, we observe how ion-irradiated tungsten undergoes a series of non-linear structural transformations with increasing irradiation exposure. Nanoscale defect-induced deformations accumulating above 0.02 displacements per atom (dpa) lead to highly fluctuating strains at ~0.1 dpa, collapsing into a driven quasi-steady structural state above ~1 dpa. The driven asymptotic state is characterized by finely dispersed vacancy defects coexisting with an extended dislocation network, and exhibits positive volumetric swelling due to the creation of new crystallographic planes through self-interstitial coalescence, but negative lattice strain. △ Less

Submitted 5 October, 2020; v1 submitted 30 July, 2020; originally announced July 2020.

Comments: 9 pages, 9 figures, in print with PRL

Annealing of focused ion beam damage in gold microcrystals: An in situ Bragg coherent X-ray diffraction imaging study

Authors: David Yang, Nicholas W. Phillips, Kay Song, Ross J. Harder, Wonsuk Cha, Felix Hofmann

Abstract: Focused ion beam (FIB) techniques are commonly used to machine, analyse and image materials at the micro- and nanoscale. However, FIB modifies the integrity of the sample by creating defects that cause lattice distortions. Methods have been developed to reduce FIB-induced strain, however these protocols need to be evaluated for their effectiveness. Here we use non-destructive Bragg coherent X-ray… ▽ More Focused ion beam (FIB) techniques are commonly used to machine, analyse and image materials at the micro- and nanoscale. However, FIB modifies the integrity of the sample by creating defects that cause lattice distortions. Methods have been developed to reduce FIB-induced strain, however these protocols need to be evaluated for their effectiveness. Here we use non-destructive Bragg coherent X-ray diffraction imaging to study the in situ annealing of FIB-milled gold microcrystals. We simultaneously measure two non-collinear reflections for two different crystals during a single annealing cycle, demonstrating the ability to reliably track the location of multiple Bragg peaks during thermal annealing. The thermal lattice expansion of each crystal is used to calculate the local temperature. This is compared to thermocouple readings, which are shown to be substantially affected by thermal resistance. To evaluate the annealing process, we analyse each reflection by considering facet area evolution, cross-correlation maps of displacement field and binarised morphology, and average strain plots. The crystal's strain and morphology evolve with increasing temperature, which is likely to be caused by the diffusion of gallium in gold below ~280°C and the self-diffusion of gold above ~280°C. The majority of FIB-induced strains are removed by 380-410\degree C, depending on which reflection is being considered. Our observations highlight the importance of measuring multiple reflections to unambiguously interpret material behaviour. △ Less

Submitted 4 March, 2021; v1 submitted 23 July, 2020; originally announced July 2020.

Comments: 51 pages, 16 figures

Journal ref: J. Synchrotron Rad. 28, 550-565 (2021)

Nanoscale lattice strains in self-ion implanted tungsten

Authors: N. W. Phillips, H. Yu, S. Das, D. Yang, K. Mizohata, W. Liu, R. Xu, R. J. Harder, F. Hofmann

Abstract: Develo** a comprehensive understanding of the modification of material properties by neutron irradiation is important for the design of future fission and fusion power reactors. Self-ion implantation is commonly used to mimic neutron irradiation damage, however an interesting question concerns the effect of ion energy on the resulting damage structures. The reduction in the thickness of the impl… ▽ More Develo** a comprehensive understanding of the modification of material properties by neutron irradiation is important for the design of future fission and fusion power reactors. Self-ion implantation is commonly used to mimic neutron irradiation damage, however an interesting question concerns the effect of ion energy on the resulting damage structures. The reduction in the thickness of the implanted layer as the implantation energy is reduced results in the significant quandary: Does one attempt to match the primary knock-on atom energy produced during neutron irradiation or implant at a much higher energy, such that a thicker damage layer is produced? Here we address this question by measuring the full strain tensor for two ion implantation energies, 2 MeV and 20 MeV in self-ion implanted tungsten, a critical material for the first wall and divertor of fusion reactors. A comparison of 2 MeV and 20 MeV implanted samples is shown to result in similar lattice swelling. Multi-reflection Bragg coherent diffractive imaging (MBCDI) shows that implantation induced strain is in fact heterogeneous at the nanoscale, suggesting that there is a non-uniform distribution of defects, an observation that is not fully captured by micro-beam Laue diffraction. At the surface, MBCDI and high-resolution electron back-scattered diffraction (HR-EBSD) strain measurements agree quite well in terms of this clustering/non-uniformity of the strain distribution. However, MBCDI reveals that the heterogeneity at greater depths in the sample is much larger than at the surface. This combination of techniques provides a powerful method for detailed investigation of the microstructural damage caused by ion bombardment, and more generally of strain related phenomena in microvolumes that are inaccessible via any other technique. △ Less

Submitted 4 June, 2020; originally announced June 2020.

Comments: Please refer to the supplementary information and movies SM1-3 for data visualisation

Gapless and Massive 1D Singlet Dispersion Channel in Infinite Spin-1/2 Ladders ---Infinite Quasi-1D Entanglement Perturbation Theory for Excitation

Authors: Lihua Wang, Aslam Parvej, D. ChangMo Yang, Kwang S. Kim

Abstract: We solve for the elementary excitation in infinite quasi-1D quantum lattices by extending the recently developed infinite quasi-1D entanglement perturbation theory. The wave function of an excited state is variationally determined by optimizing superposition of cluster operation, each of which is composed of simultaneous on-site operation inside a block of lattice sites, on the ground state in a f… ▽ More We solve for the elementary excitation in infinite quasi-1D quantum lattices by extending the recently developed infinite quasi-1D entanglement perturbation theory. The wave function of an excited state is variationally determined by optimizing superposition of cluster operation, each of which is composed of simultaneous on-site operation inside a block of lattice sites, on the ground state in a form of plane wave. The excitation energy with respect to the wave number gives the spectra for an elementary excitation. Our method is artificial broadening free and is adaptive for various quasi-particle pictures. Using the triplet spectrum, the application to $\infty$-by-$N$ antiferromagnetic spin-$\frac{1}{2}$ ladders for $N=2, 4, 6, 8$, and $10$ confirms a previous report that there is a quantum dimensional transition, namely, the lattice transits from quasi-1D to 2D at a finite critical value $N_c=10$. The massless triplet dispersion at $\left( π, π\right)$ sees a vanishing gap. Our results detect the anomaly at $\left(π,0\right)$ in the triplet spectrum, agreeing well with the inelastic neutron scattering measurement of a macroscopic sample. Surprisingly, our results also reveal a gapless and massive 1D singlet dispersion channel that is much lower than the triplet excitation. We note, however, the dimensional transition is determined by the massless triplet dispersion. △ Less

Submitted 5 March, 2020; originally announced March 2020.

Comments: 5 pages, 4 figures, Supplemental Information

Imaging the breakdown of ohmic transport in graphene

Authors: A. Jenkins, S. Baumann, H. Zhou, S. A. Meynell, D. Yang, K. Watanabe, T. Taniguchi, A. Lucas, A. F. Young, A. C. Bleszynski Jayich

Abstract: Ohm's law describes the proportionality of current density and electric field. In solid-state conductors, Ohm's law emerges due to electron scattering processes that relax the electrical current. Here, we use nitrogen-vacancy center magnetometry to directly image the local breakdown of Ohm's law in a narrow constriction fabricated in a high mobility graphene monolayer. Ohmic flow is visible at roo… ▽ More Ohm's law describes the proportionality of current density and electric field. In solid-state conductors, Ohm's law emerges due to electron scattering processes that relax the electrical current. Here, we use nitrogen-vacancy center magnetometry to directly image the local breakdown of Ohm's law in a narrow constriction fabricated in a high mobility graphene monolayer. Ohmic flow is visible at room temperature as current concentration on the constriction edges, with flow profiles entirely determined by sample geometry. However, as the temperature is lowered below 200 K, the current concentrates near the constriction center. The change in the flow pattern is consistent with a crossover from diffusive to viscous electron transport dominated by electron-electron scattering processes that do not relax current. △ Less

Submitted 12 March, 2020; v1 submitted 12 February, 2020; originally announced February 2020.

Comments: Fixed colorscale label Fig. 3b

Supra-Binary Ferroelectricity in a Nanowire

Authors: Wentao Xu, Lihua Wang, Yeongjun Lee, D. ChangMo Yang, Amir Hajibabaei, Cheolmin Park, Tae-Woo Lee, Kwang S. Kim

Abstract: We report the prediction and observation of supra-binary ferroelectricity in a ferroelectric nanowire (FNW) covered with a semi-cylindrical gate that provides an anisotropic electric field in the FNW. There are gate-voltage-driven transitions between four polarization phases in FNW's cross section, dubbed axial-up, axial-down, radial-in and radial-out. They are determined by the interplay between… ▽ More We report the prediction and observation of supra-binary ferroelectricity in a ferroelectric nanowire (FNW) covered with a semi-cylindrical gate that provides an anisotropic electric field in the FNW. There are gate-voltage-driven transitions between four polarization phases in FNW's cross section, dubbed axial-up, axial-down, radial-in and radial-out. They are determined by the interplay between the topological depolarization energy and the free energy induced by an anisotropic external electric field, in clear distinction from the conventional film-based binary ferroelectricity. When the FNW is mounted on a biased graphene nanoribbon (GNR), these transitions induce exotic current-voltage hysteresis in the FNW-GNR transistor. Our discovery suggests new operating mechanisms of ferroelectric devices. In particular, it enables intrinsic multi-bit information manipulation in parallel to the binary manipulation employed in data storage devices. △ Less

Submitted 30 December, 2019; originally announced December 2019.

Comments: 4 figures, 7 supporting figures, 2 animations