Showing 1–50 of 52 results for author: Yakobson, B

Ubiquitous Flat Bands in a Cr-based Kagome Superconductor

Authors: Yucheng Guo, Zehao Wang, Fang Xie, Yuefei Huang, Bin Gao, Ji Seop Oh, Han Wu, Zhaoyu Liu, Zheng Ren, Yuan Fang, Ananya Biswas, Yichen Zhang, Ziqin Yue, Cheng Hu, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Makoto Hashimoto, Donghui Lu, Junichiro Kono, Jiun-Haw Chu, Boris I Yakobson, Robert J Birgeneau, Qimiao Si, Pengcheng Dai , et al. (1 additional authors not shown)

Abstract: In the quest for novel quantum states driven by topology and correlation, kagome lattice materials have garnered significant interest due to their distinctive electronic band structures, featuring flat bands (FBs) arising from the quantum destructive interference of the electronic wave function. The tuning of the FBs to the chemical potential would lead to the possibility of liberating electronic… ▽ More In the quest for novel quantum states driven by topology and correlation, kagome lattice materials have garnered significant interest due to their distinctive electronic band structures, featuring flat bands (FBs) arising from the quantum destructive interference of the electronic wave function. The tuning of the FBs to the chemical potential would lead to the possibility of liberating electronic instabilities that lead to emergent electronic orders. Despite extensive studies, direct evidence of FBs tuned to the chemical potential and their participation in emergent electronic orders have been lacking in bulk quantum materials. Here using a combination of Angle-Resolved Photoemission Spectroscopy (ARPES) and Density Functional Theory (DFT), we reveal that the low-energy electronic structure of the recently discovered Cr-based kagome metal superconductor CsCr3Sb5 is dominated by a pervasive FB in close proximity to, and below the Fermi level. A comparative analysis with orbital-projected DFT and polarization dependence measurement uncovers that an orbital-selective renormalization mechanism is needed to reconcile the discrepancy with the DFT calculations, which predict the FB to appear 200 meV above the Fermi level. Furthermore, we observe the FB to shift away from the Fermi level by 20 meV in the low-temperature density wave-ordered phase, highlighting the role of the FB in the emergent electronic order. Our results reveal CsCr3Sb5 to stand out as a promising platform for further exploration into the effects of FBs near the Fermi level on kagome lattices, and their role in emergent orders in bulk quantum materials. △ Less

Submitted 12 June, 2024; v1 submitted 7 June, 2024; originally announced June 2024.

Electron correlations in the kagome flat band metal $\rm CsCr_3Sb_5$

Authors: Fang Xie, Yuan Fang, Ying Li, Yuefei Huang, Lei Chen, Chandan Setty, Shouvik Sur, Boris Yakobson, Roser Valentí, Qimiao Si

Abstract: Kagome metals offer a unique platform for investigating robust electron-correlation effects because of their lattice geometry, flat bands and multi-orbital nature. In the cases with active flat bands, recent theoretical studies have pointed to a rich phase diagram that contains not only electronic orders but also quantum criticality. $\rm CsCr_3Sb_5$ has emerged as a strong candidate for exploring… ▽ More Kagome metals offer a unique platform for investigating robust electron-correlation effects because of their lattice geometry, flat bands and multi-orbital nature. In the cases with active flat bands, recent theoretical studies have pointed to a rich phase diagram that contains not only electronic orders but also quantum criticality. $\rm CsCr_3Sb_5$ has emerged as a strong candidate for exploring such new physics. Here, using effective tight-binding models obtained from ab initio calculations, we study the effects of electronic correlations and symmetries on the electronic structure of $\rm CsCr_3 Sb_5$. The effective tight-binding model and Fermi surface comprise multiple Cr-$d$ orbitals and Sb-$p$ orbitals. The introduction of Hubbard-Kanamori interactions leads to orbital-selective band renormalization dominated by the $d_{xz}$ band, concurrently producing emergent flat bands very close to the Fermi level. Our analysis sets the stage for further investigations into the electronic properties of $\rm CsCr_3Sb_5$, including electronic orders, quantum criticality and unconventional superconductivity, which promise to shed much new light into the electronic materials with frustrated lattices and bring about new connections with the correlation physics of a variety of strongly correlated systems. △ Less

Submitted 6 March, 2024; originally announced March 2024.

Comments: 6 + 6 pages, 4 + 5 figures

Non-Fermi liquid behavior in a correlated flatband pyrochlore lattice

Authors: Jianwei Huang, Lei Chen, Yuefei Huang, Chandan Setty, Bin Gao, Yue Shi, Zhaoyu Liu, Yichen Zhang, Turgut Yilmaz, Elio Vescovo, Makoto Hashimoto, Donghui Lu, Boris I. Yakobson, Pengcheng Dai, Jiun-Haw Chu, Qimiao Si, Ming Yi

Abstract: Electronic correlation effects are manifested in quantum materials when either the onsite Coulomb repulsion is large or the electron kinetic energy is small. The former is the dominant effect in the cuprate superconductors or heavy fermion systems while the latter in twisted bilayer graphene or geometrically frustrated metals. However, the simultaneous cooperation of both effects in the same quant… ▽ More Electronic correlation effects are manifested in quantum materials when either the onsite Coulomb repulsion is large or the electron kinetic energy is small. The former is the dominant effect in the cuprate superconductors or heavy fermion systems while the latter in twisted bilayer graphene or geometrically frustrated metals. However, the simultaneous cooperation of both effects in the same quantum material--the design principle to produce a correlated topological flat bands pinned at the Fermi level--remains rare. Here, using angle-resolved photoemission spectroscopy, we report the observation of a flat band at the Fermi level in a 3$d$ pyrochlore metal CuV$_2$S$_4$. From a combination of first-principles calculations and slave-spin calculations, we understand the origin of this band to be a destructive quantum-interference effect associated with the V pyrochlore sublattice and further renormalization to the Fermi level by electron interactions in the partially filled V $t_{2g}$ orbitals. As a result, we find transport behavior that indicates a deviation from Fermi-liquid behavior as well as a large Sommerfeld coefficient. Our work demonstrates the pathway into correlated topology by constructing and pinning correlated flat bands near the Fermi level out of a pure $d$-electron system by the combined cooperation of local Coulomb interactions and geometric frustration in a pyrochlore lattice system. △ Less

Submitted 2 November, 2023; originally announced November 2023.

Comments: 23 pages, 4 figures, to appear in Nature Physics

Journal ref: Nature Physics 20, 603-609 (2024)

Large effective magnetic fields from chiral phonons in rare-earth halides

Authors: Jiaming Luo, Tong Lin, Junjie Zhang, Xiaotong Chen, Elizabeth R. Blackert, Rui Xu, Boris I. Yakobson, Hanyu Zhu

Abstract: Time-reversal symmetry (TRS) is pivotal for materials optical, magnetic, topological, and transport properties. Chiral phonons, characterized by atoms rotating unidirectionally around their equilibrium positions, generate dynamic lattice structures that break TRS. Here we report that coherent chiral phonons, driven by circularly polarized terahertz light pulses, can polarize the paramagnetic spins… ▽ More Time-reversal symmetry (TRS) is pivotal for materials optical, magnetic, topological, and transport properties. Chiral phonons, characterized by atoms rotating unidirectionally around their equilibrium positions, generate dynamic lattice structures that break TRS. Here we report that coherent chiral phonons, driven by circularly polarized terahertz light pulses, can polarize the paramagnetic spins in CeF3 like a quasi-static magnetic field on the order of 1 Tesla. Through time-resolved Faraday rotation and Kerr ellipticity, we found the transient magnetization is only excited by pulses resonant with phonons, proportional to the angular momentum of the phonons, and growing with magnetic susceptibility at cryogenic temperatures, as expected from the spin-phonon coupling model. The time-dependent effective magnetic field quantitatively agrees with that calculated from phonon dynamics. Our results may open a new route to directly investigate mode-specific spin-phonon interaction in ultrafast magnetism, energy-efficient spintronics, and non-equilibrium phases of matter with broken TRS. △ Less

Submitted 6 June, 2023; originally announced June 2023.

Journal ref: Science 382(6671), 698-702 (2023)

Bottom-up Integration of TMDCs with Pre-Patterned Device Architectures via Transfer-free Chemical Vapor Deposition

Authors: Lucas M. Sassi, Sathvik Ajay Iyengar, Anand B. Puthirath, Yuefei Huang, Xingfu Li, Tanguy Terlier, Ali Mojibpour, Ana Paula C. Teixeira, Palash Bharadwaj, Chandra Sekhar Tiwary, Robert Vajtai, Saikat Talapatra, Boris Yakobson, Pulickel M. Ajayan

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise of continued miniaturization. However, challenges lie in Back End of Line (BEOL) integration temperature and time compliance regarding current requirements for c… ▽ More Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise of continued miniaturization. However, challenges lie in Back End of Line (BEOL) integration temperature and time compliance regarding current requirements for crystal growth. Additionally, deleterious and time-consuming transfer processes and multiple steps involved in channel/contact engineering can cripple device performance. This work demonstrates kinetics-governed in-situ growth regimes (surface or edge growth from gold) of WSe2 and provides a mechanistic understanding of these regimes via energetics across various material interfaces. As a proof-of-concept, field effect transistors (FET) with an in-situ grown WSe2 channel across Au contacts are fabricated, demonstrating a 2D semiconductor transistor via a transfer-free method within the 450-600 C 2h-time window requirement BEOL integration. We leverage directional edge growth to fabricate contacts with robust thickness-dependent Schottky-to-Ohmic behavior. By transitioning between Au and SiO2 growth substrates in situ, this work achieves strain-induced subthreshold swing of 140 mV/decade, relatively high mobility of 107 +- 19 cm2V-1s-1, and robust ON/OFF ratios 10^6 in the fabricated FETs. △ Less

Submitted 23 May, 2023; originally announced May 2023.

Comments: 32 pages, 5 Figures

Hardness Descriptor Derived from Symbolic Regression

Authors: Christian Tantardini, Hayk A. Zakaryan, Zhong-Kang Han, Tariq Altalhi, Sergey V. Levchenko, Alexander G. Kvashnin, Boris I. Yakobson

Abstract: Hardness is a materials' property with implications in the different industrial fields, including oil and gas, manufacturing, and others. However, the relationship between this macroscale property and atomic (i.e., microscale) properties is unknown and in the last decade several models have tried to give an answer. The understanding of such relationship is of fundamental importance for discovery o… ▽ More Hardness is a materials' property with implications in the different industrial fields, including oil and gas, manufacturing, and others. However, the relationship between this macroscale property and atomic (i.e., microscale) properties is unknown and in the last decade several models have tried to give an answer. The understanding of such relationship is of fundamental importance for discovery of harder materials with specific characteristics to be employed in different fields. In this work, we have found a physical descriptor for Vickers hardness using a symbolic-regression artificial-intelligence approach based on compressed sensing. The approach (SISSO - sure independence screening plus sparsifying operator) combines materials' features (properties), obtained from atomistic simulations, with experimental values of the target property (Vikers hardness) for 635 compounds to develop the descriptor. The experimental values of hardness for binary, ternary, and quaternary transition-metal borides, carbides, nitrides, carbonitrides, carboborides, and boronitrides were included in the dataset. The found descriptor is a non-linear function of the microscopic properties, with the most significant contribution being from a combination of Voigt-averaged bulk modulus, Poisson's ratio, and Reuss-averaged shear modulus. Results of high-throughput screening of 635 candidate materials using the found descriptor suggest the enhancement of material's hardness through mixing with harder yet metastable structures (e.g., metastable VN, TaN, ReN$_2$, Cr$_3$N$_4$, and ZrB$_6$ all exhibit high hardness). △ Less

Submitted 16 January, 2024; v1 submitted 25 April, 2023; originally announced April 2023.

Unidirectional domain growth of hexagonal boron nitride thin films

Authors: Abhijit Biswas, Qiyuan Ruan, Frank Lee, Chenxi Li, Sathvik Ajay Iyengar, Anand B. Puthirath, Xiang Zhang, Harikishan Kannan, Tia Gray, A. Glen Birdwell, Mahesh R. Neupane, Pankaj B. Shah, Dmitry A. Ruzmetov, Tony G. Ivanov, Robert Vajtai, Manoj Tripathi, Alan Dalton, Boris I. Yakobson, Pulickel M. Ajayan

Abstract: Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates rem… ▽ More Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates remains significantly challenging because of high-bonding anisotropicity and complex growth kinetics than the conventional thin films growth, thus resulting in the formation of randomly oriented domains morphology, and hindering its usefulness in integrated nano-devices. Here, ultra-wide bandgap h-BN thin films are grown directly on low-miscut atomically smooth highly insulating c-plane sapphire substrates (without using any metal catalytic layer) by pulsed laser deposition, showing remarkable unidirectional triangular-shape domains morphology. This unidirectional domain growth is attributed to the step-edge guided nucleation caused by reducing the film-substrate interfacial symmetry and energy, thereby breaking the degeneracy of nucleation sites of random domains, as revealed by the density functional theory (DFT) calculations. Through extensive characterizations, we further demonstrate the excellent single crystal-like functional properties of films. Our findings might pave the way for feasible large-area direct growth of electronic-quality h-BN thin films on insulating substrates for high-performance 2D-electronics, and in addition would be beneficial for hetero engineering of 2D-vdW materials with emergent phenomena. △ Less

Submitted 26 January, 2023; v1 submitted 19 August, 2022; originally announced August 2022.

Comments: 39 pages, 7 figures, Revised accepted version of the article

Journal ref: Applied Materials Today, Volume 30, February 2023, 101734

Designing 1D correlated-electron states by non-Euclidean topography of 2D monolayers

Authors: Sunny Gupta, Henry Yu, Boris I. Yakobson

Abstract: Two-dimensional (2D) bilayers, twisted to particular angles to display electronic flat bands, are being extensively explored for physics of strongly correlated 2D systems. However, the similar rich physics of one-dimensional (1D) strongly correlated systems remains elusive as it is largely inaccessible by twists. Here, a distinctive way to create 1D flat bands is proposed, by either stam** or gr… ▽ More Two-dimensional (2D) bilayers, twisted to particular angles to display electronic flat bands, are being extensively explored for physics of strongly correlated 2D systems. However, the similar rich physics of one-dimensional (1D) strongly correlated systems remains elusive as it is largely inaccessible by twists. Here, a distinctive way to create 1D flat bands is proposed, by either stam** or growing a 2D monolayer on a non-Euclidean topography-patterned surface. Using boron nitride (hBN) as an example, our analysis employing elastic plate theory, density-functional and coarse-grained tight-binding method reveals that hBN's bi-periodic sinusoidal deformation creates pseudo-electric and magnetic fields with unexpected spatial dependence. A combination of these fields leads to anisotropic confinement and 1D flat bands. Moreover, changing the periodic undulations can tune the bandwidth, to drive the system to different strongly correlated regimes such as density waves, Luttinger liquid, and Mott insulator. The 1D nature of these states differs from those obtained in twisted materials and can be exploited to study the exciting physics of 1D quantum systems. △ Less

Submitted 17 November, 2021; originally announced November 2021.

Comments: 4 figures

Journal ref: Nat Commun 13, 3103 (2022)

Step-edge epitaxy for borophene growth on insulators

Authors: Qiyuan Ruan, Luqing Wang, Ksenia V. Bets, Boris I. Yakobson

Abstract: Borophene, a monoatomic layer of boron atoms, stands out among two-dimensional (2D) materials, with its versatile properties of polymorphism, metallicity, plasmonics, superconductivity, tantalizing for physics exploration and next-generation devices. Yet its phases are all synthesized on and stay bound to metal substrates, hampering both characterization and use. The growth on the inert insulator… ▽ More Borophene, a monoatomic layer of boron atoms, stands out among two-dimensional (2D) materials, with its versatile properties of polymorphism, metallicity, plasmonics, superconductivity, tantalizing for physics exploration and next-generation devices. Yet its phases are all synthesized on and stay bound to metal substrates, hampering both characterization and use. The growth on the inert insulator would allow post-synthesis exfoliation of borophene, but its weak adhesion to such substrate results in a very high 2D-nucleation barrier preventing clean borophene growth. This challenge can be circumvented in a devised and demonstrated here, with ab initio calculations, strategy. Naturally present 1D-defects, the step-edges on h-BN substrate surface, enable boron epitaxial assembly, reduce the nucleation dimensionality and lower the barrier by an order of magnitude (to 1.1 eV or less), yielding v1/9 phase. Weak borophene adhesion to the insulator makes it readily accessible for comprehensive property tests or transfer into the device setting. △ Less

Submitted 21 August, 2021; originally announced August 2021.

Journal ref: ACS Nano 2021 15 (11), 18347-18353

Stability and electronic properties of two-dimensional gallium

Authors: Alex Kutana, Qiyuan Ruan, Jun-Jie Zhang, Evgeni S. Penev, Boris I. Yakobson

Abstract: Two-dimensional metals offer intriguing possibilities to explore metallicity and other related properties in systems with reduced dimensionality. Here, following recent experimental reports of synthesis of two-dimensional metallic gallium (gallenene) on insulating substrates, we conduct a computational search of gallenene structures using the Particle Swarm Optimization algorithm, and identify sta… ▽ More Two-dimensional metals offer intriguing possibilities to explore metallicity and other related properties in systems with reduced dimensionality. Here, following recent experimental reports of synthesis of two-dimensional metallic gallium (gallenene) on insulating substrates, we conduct a computational search of gallenene structures using the Particle Swarm Optimization algorithm, and identify stable low energy structures. Our calculations of the critical temperature for conventional superconductivity yield values $\sim 7$ K for gallenene. We also emulate the presence of the substrate by introducing the external confining potential and test its effect on the structures with unstable phonons. △ Less

Submitted 8 July, 2021; originally announced July 2021.

Single-crystal hexagonal boron nitride monolayer epitaxially grown on Cu (111) thin film across a wafer

Authors: Tse-An Chen, Chih-Piao Chuu, Chien-Chih Tseng, Chao-Kai Wen, H. -S. Philip Wong, Shuangyuan Pan, Rongtan Li, Yanfeng Zhang, Qiang Fu, Boris I. Yakobson, Wen-Hao Chang, Lain-Jong Li

Abstract: We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu(111). The unidirectional epitaxial growth is guaranteed by large binding energy difference, ~0.23 eV, between A- and B-steps edges on Cu(111) docking with B6N7 clusters, confirmed by density functional theory calculations. We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu(111). The unidirectional epitaxial growth is guaranteed by large binding energy difference, ~0.23 eV, between A- and B-steps edges on Cu(111) docking with B6N7 clusters, confirmed by density functional theory calculations. △ Less

Submitted 1 June, 2021; v1 submitted 31 May, 2021; originally announced May 2021.

Journal ref: Nature 579, 219-223 (2020)

Nanoscale probing of image-potential states and electron transfer do** in borophene polymorphs

Authors: Xiaolong Liu, Luqing Wang, Boris I. Yakobson, Mark C. Hersam

Abstract: Using field-emission resonance spectroscopy with an ultrahigh vacuum scanning tunneling microscope, we reveal Stark-shifted image-potential states of the v_1/6 and v_1/5 borophene polymorphs on Ag(111) with long lifetimes, suggesting high borophene lattice and interface quality. These image-potential states allow the local work function and interfacial charge transfer of borophene to be probed at… ▽ More Using field-emission resonance spectroscopy with an ultrahigh vacuum scanning tunneling microscope, we reveal Stark-shifted image-potential states of the v_1/6 and v_1/5 borophene polymorphs on Ag(111) with long lifetimes, suggesting high borophene lattice and interface quality. These image-potential states allow the local work function and interfacial charge transfer of borophene to be probed at the nanoscale and test the widely employed self-do** model of borophene. Supported by apparent barrier height measurements and density functional theory calculations, electron transfer do** occurs for both borophene phases from the Ag(111) substrate. In contradiction with the self-do** model, a higher electron transfer do** level occurs for denser v_1/6 borophene compared to v_1/5 borophene, thus revealing the importance of substrate effects on borophene electron transfer. △ Less

Submitted 18 November, 2020; originally announced November 2020.

Journal ref: Nano Letters 2021, 21, 1169-1174

Nano-thermodynamics of chemically induced graphene-diamond transformation

Authors: Sergey V. Erohin, Qiyuan Ruan, Pavel B. Sorokin, Boris I. Yakobson

Abstract: Nearly two-dimensional diamond, or diamane, is coveted as ultrathin $sp^3$-carbon film with unique mechanics and electro-optics. The very thinness ($~h$) makes it possible for the surface chemistry, e.g. adsorbed atoms, to shift the bulk phase thermodynamics in favor of diamond, from multilayer graphene. Thermodynamic theory coupled with atomistic first principles computations predicts not only th… ▽ More Nearly two-dimensional diamond, or diamane, is coveted as ultrathin $sp^3$-carbon film with unique mechanics and electro-optics. The very thinness ($~h$) makes it possible for the surface chemistry, e.g. adsorbed atoms, to shift the bulk phase thermodynamics in favor of diamond, from multilayer graphene. Thermodynamic theory coupled with atomistic first principles computations predicts not only the reduction of required pressure ($p/p_{\infty}>1-h_0/h$), but also the nucleation barriers, definitive for the kinetic feasibility of diamane formation. Moreover, the optimal adsorbent chair-pattern on a bilayer graphene results in a cubic diamond lattice, while for thicker precursors the adsorbent boat-structure tends to produce hexagonal diamond (lonsdaleite), if graphene was in AA` stacking to start with. As adsorbents, H and F are conducive to diamond formation, while Cl appears sterically hindered. △ Less

Submitted 25 October, 2020; originally announced October 2020.

Comments: to appear in Small

Defining shapes of 2D-crystals with undefinable edge-energies

Authors: Luqing Wang, Sharmila N. Shirodkar, Zhuhua Zhang, Boris I. Yakobson

Abstract: The equilibrium shape of crystals is a fundamental property of both aesthetic appeal and practical import. It is also a visible macro-manifestation of the underlying atomic-scale forces and chemical makeup, most conspicuous in two-dimensional (2D) materials of keen current interest. If the crystal surface/edge energy is known for different directions, its shape can be obtained by geometric Wulff c… ▽ More The equilibrium shape of crystals is a fundamental property of both aesthetic appeal and practical import. It is also a visible macro-manifestation of the underlying atomic-scale forces and chemical makeup, most conspicuous in two-dimensional (2D) materials of keen current interest. If the crystal surface/edge energy is known for different directions, its shape can be obtained by geometric Wulff construction, a tenet of crystal physics. However, if symmetry is lacking, the crystal edge energy cannot be defined or calculated, so its shape becomes elusive, presenting an insurmountable problem for theory. Here we show how, in fact, one can proceed with "latent edge energies" towards constructive prediction of a unique crystal shape, and demonstrate it for challenging material-examples, like ${\rm SnS}$ of ${\rm C_{2v}}$ symmetry and even ${\rm AgNO_2}$ of ${\rm C_1}$-no symmetry at all. △ Less

Submitted 19 September, 2019; originally announced September 2019.

Heterobilayers of 2D materials as a platform for excitonic superfluidity

Authors: Sunny Gupta, Alex Kutana, Boris I. Yakobson

Abstract: Excitonic condensate has been long-sought within bulk indirect-gap semiconductors, quantum wells, and 2D material layers, all tried as carrying media. Here we propose intrinsically stable 2D semiconductor heterostructures with doubly-indirect overlap** bands as optimal platforms for excitonic condensation. After screening hundreds of 2D materials, we identify candidates where spontaneous exciton… ▽ More Excitonic condensate has been long-sought within bulk indirect-gap semiconductors, quantum wells, and 2D material layers, all tried as carrying media. Here we propose intrinsically stable 2D semiconductor heterostructures with doubly-indirect overlap** bands as optimal platforms for excitonic condensation. After screening hundreds of 2D materials, we identify candidates where spontaneous excitonic condensation mediated by purely electronic interaction should occur, and hetero-pairs Sb2Te2Se/BiTeCl, Hf2N2I2/Zr2N2Cl2, and LiAlTe2/BiTeI emerge promising. Unlike monolayers, where excitonic condensation is hampered by Peierls instability, or other bilayers, where do** by applied voltage is required, rendering them essentially non-equilibrium systems, the chemically-specific heterostructures predicted here are lattice-matched, show no detrimental electronic instability, and display broken type-III gap, thus offering optimal carrier density without any gate voltages, in true-equilibrium. Predicted materials can be used to access different parts of electron-hole phase diagram, including BEC-BCS crossover, enabling tantalizing applications in superfluid transport, Josephson-like tunneling, and dissipationless charge counterflow. △ Less

Submitted 18 May, 2020; v1 submitted 16 August, 2019; originally announced August 2019.

Comments: 4 figure

Journal ref: Nat Commun 11, 2989 (2020)

Type-II multiferroic Hf$_{2}$VC$_{2}$F$_{2}$ MXene monolayer with high transition temperature

Authors: Jun-Jie Zhang, Linfang Lin, Yang Zhang, Menghao Wu, Boris I. Yakobson, Shuai Dong

Abstract: Achieving multiferroic two-dimensional (2D) materials should enable numerous functionalities in nanoscale devices. Until now, however, predicted 2D multiferroics are very few and with coexisting yet only loosely coupled (type-I) ferroelectricity and magnetism. Here, a type-II multiferroic MXene Hf$_{2}$VC$_{2}$F$_{2}$ monolayer is identified, where ferroelectricity originates directly from its mag… ▽ More Achieving multiferroic two-dimensional (2D) materials should enable numerous functionalities in nanoscale devices. Until now, however, predicted 2D multiferroics are very few and with coexisting yet only loosely coupled (type-I) ferroelectricity and magnetism. Here, a type-II multiferroic MXene Hf$_{2}$VC$_{2}$F$_{2}$ monolayer is identified, where ferroelectricity originates directly from its magnetism. The noncollinear Y-type spin order generates a polarization perpendicular to the spin helical plane. Remarkably, the multiferroic transition is estimated to occur above room temperature. Our investigation should open the door to a new branch of 2D materials for pursuit of intrinsically strong magnetoelectricity. △ Less

Submitted 10 July, 2019; originally announced July 2019.

Comments: 4 figures

Journal ref: Journal of the American Chemical Society 140, 9768-9773 (2018)

In Pursuit of 2D Materials for Maximum Optical Response

Authors: Sunny Gupta, Sharmila N. Shirodkar, Alex Kutana, Boris I. Yakobson

Abstract: Despite being only a few atoms thick, single-layer two-dimensional (2D) materials display strong electron-photon interactions that could be utilized in efficient light modulators on extreme subwavelength scales. In various applications involving light modulation and manipulation, materials with strong optical response at different wavelengths are required. Using qualitative analytical modeling and… ▽ More Despite being only a few atoms thick, single-layer two-dimensional (2D) materials display strong electron-photon interactions that could be utilized in efficient light modulators on extreme subwavelength scales. In various applications involving light modulation and manipulation, materials with strong optical response at different wavelengths are required. Using qualitative analytical modeling and first-principles calculations, we determine the theoretical limit of the maximum optical response such as absorbance (A) and reflectance (R) in 2D materials and also conduct a computational survey to seek out those with best A and R in various frequency ranges, from mid-infrared (IR) to deep ultraviolet (UV). We find that 2D boron has broadband reflectance R >99% for >100 layers, surpassing conventional thin films of bulk metals such as silver. Moreover, we identify 2D monolayer semiconductors with maximum response, for which we obtain quantitative estimates by calculating quasiparticle energies and accounting for excitonic effects by solving the Bethe-Salpeter equation (BSE). We found several monolayer semiconductors with absorbances >30% in different optical ranges which are more than half of the maximum possible value for a 2D material. Our study predicts 2D materials which can potentially be used in ultra-thin reflectors and absorbers for optoelectronic application in various frequency ranges. △ Less

Submitted 17 September, 2018; originally announced September 2018.

Comments: 18 pages, 6 figures

Dimensionality-suppressed chemical do** in 2D semiconductors: the cases of phosphorene, MoS2, and ReS2 from first-principles

Authors: Ji-Hui Yang, Boris. I. Yakobson

Abstract: In spite of great appeal of two-dimensional (2D) semiconductors for electronics and optoelectronics, to achieve required charge carrier concentrations by means of chemical do** remains a challenge, due to large defect ionization energies (IEs). Here by decomposing the defect IEs into the neutral single-electron defect level, the structural relaxation energy gain, and the electronic relaxation en… ▽ More In spite of great appeal of two-dimensional (2D) semiconductors for electronics and optoelectronics, to achieve required charge carrier concentrations by means of chemical do** remains a challenge, due to large defect ionization energies (IEs). Here by decomposing the defect IEs into the neutral single-electron defect level, the structural relaxation energy gain, and the electronic relaxation energy cost, we propose a conceptual picture that the large defect IEs are caused by two effects of reduced dimensionality. While the quantum confinement effect (QCE) makes the neutral single-electron point defect levels deep, the reduced screening effect (RE) leads to high energy cost for the electronic relaxation. The first-principles calculations for monolayer, few-layer, and bulk black phosphorus (BP), MoS2, and ReS2 with strong, medium, and weak interlayer interactions, respectively, as examples, do demonstrate the general trend. Based on the gained insight into defect behaviors, strategies can be envisaged for reducing defect IEs and improving charge carrier do**. Using BP monolayer either embedded into dielectric continuum or encapsulated between two h-BN layers, as practical examples, we demonstrate the feasibility of increasing the screening to reduce the defect IEs and boost carrier concentration. Our analysis is expected to help achieving effective carrier do** and thus to open ways towards more extensive applications of 2D semiconductors. △ Less

Submitted 14 November, 2017; originally announced November 2017.

Comments: 29 pages, 7 figures

Unusual negative formation enthalpies and atomic ordering in isovalent alloys of transition metal dichalcogenide monolayers

Authors: Ji-Hui Yang, Boris I. Yakobson

Abstract: Common substitutional isovalent semiconductor alloys usually form disordered metastable phases with positive excess formation enthalpies (ΔH). In contrast, monolayer alloys of transition metal dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se) always have negative ΔH, suggesting atomic ordering, which is, however, not yet experimentally observed. Using first-principles calculations, we find that th… ▽ More Common substitutional isovalent semiconductor alloys usually form disordered metastable phases with positive excess formation enthalpies (ΔH). In contrast, monolayer alloys of transition metal dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se) always have negative ΔH, suggesting atomic ordering, which is, however, not yet experimentally observed. Using first-principles calculations, we find that the negative ΔH of cation-mixed TMD alloys results from the charge transfer from weak Mo-X to nearest strong W-X bonds and the negative ΔH of anion-mixed TMD alloys comes from the larger energy gain due to the charge transfer from Se to nearest S atoms than the energy cost due to the lattice mismatch. Consequently, cation-mixed and anion-mixed alloys should energetically prefer to have Mo-X-W and S-M-Se ordering, respectively. The atomic ordering, however, is only locally ordered but disordered in the long range due to the symmetry of TMD monolayers, as demonstrated by many energetically degenerate structures for given alloy compositions. Besides, the local ordering and disordering effects on the macroscopic properties such as bandgaps and optical absorptions are negligible, making the experimental observation of locally ordered TMD alloys challenging. We propose to take the advantage of microscopic properties such as defects which strongly depend on local atomic configurations for experiments to identify the disordering and local ordering in TMD alloys. Finally, quaternary TMD alloys by mixing both cations and anions are studied to have a wide range of bandgaps for optoelectronic applications. Our work is expected to help the formation and utilization of TMD alloys. △ Less

Submitted 13 October, 2017; originally announced October 2017.

Comments: 25 pages, 6 figures

Quaternary two-dimensional (2D) transition metal dichalcogenides (TMDs) with tunable bandgap

Authors: Sandhya Susarla, Alex Kutana, Jordan A. Hachtel, Vidya Kochat, Amey Apte, Robert Vajtai, Juan Carlos Idrobo, Boris I. Yakobson, Chandra Sekhar Tiwary, Pulickel M Ajayan

Abstract: Alloying/do** in two-dimensional material has been important due to wide range band gap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the band gap and also reduced the growth temperature. Here, we report synthesis of quaternary alloys MoxW1-xS2ySe2(1-y) using chemical vapour deposition. The composition of alloys… ▽ More Alloying/do** in two-dimensional material has been important due to wide range band gap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the band gap and also reduced the growth temperature. Here, we report synthesis of quaternary alloys MoxW1-xS2ySe2(1-y) using chemical vapour deposition. The composition of alloys has been tuned by changing the growth temperatures. As a result, we can tune the bandgap which varies from 1.73 eV to 1.84 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap. △ Less

Submitted 2 May, 2017; originally announced May 2017.

Electrostatic properties and current transport of two-dimensional Schottky barrier diode

Authors: Fangbo Xu, Alex Kutana, Yang Yang, Boris I. Yakobson

Abstract: Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these low-dimensional systems. Here, we propose a new model that yields carrier distribution and potential profile across the 2D metal-semiconductor heterojunction unde… ▽ More Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these low-dimensional systems. Here, we propose a new model that yields carrier distribution and potential profile across the 2D metal-semiconductor heterojunction under the equilibrium condition, based on the input from first-principle calculations. Our calculation also suggests that, at the same forward bias, the current density of a stack of 2D graphene-phosphorene Schottky diodes may be ten thousand times higher than that of a traditional 3D Schottky diode and offer less energy dissipation. △ Less

Submitted 23 April, 2017; originally announced April 2017.

Predicting Stable Phase Monolayer Mo$_2$C (MXene), a Superconductor with Chemically-Tunable Critical Temperature

Authors: **cheng Lei, Alex Kutana, Boris I. Yakobson

Abstract: Two-dimensional (2D) superconductors have attracted great attention in recent years due to the possibility of new phenomena in lower dimensions. With many bulk transition metal carbides being well-known conventional superconductors, here we perform first-principles calculations to evaluate the possible superconductivity in a 2D monolayer Mo$_2$C. Three candidate structures (monolayer alpha-Mo$_2$C… ▽ More Two-dimensional (2D) superconductors have attracted great attention in recent years due to the possibility of new phenomena in lower dimensions. With many bulk transition metal carbides being well-known conventional superconductors, here we perform first-principles calculations to evaluate the possible superconductivity in a 2D monolayer Mo$_2$C. Three candidate structures (monolayer alpha-Mo$_2$C, 1T MXene-Mo$_2$C, and 2H MXene-Mo$_2$C) are considered and the most stable form is found to be the 2H MXene-Mo$_2$C. Electronic structure calculations indicate that both unpassivated and passivated 2H forms exhibit metallic properties. We obtain the phonon frequencies and electron-phonon couplings using density-functional perturbation theory, and based on the BCS theory and McMillan equation, estimate the critical temperatures to be in the ~0-13 K range, depending on the species of the surface termination (O, H and OH). The most interesting termination group is H, which can increase the electron-phonon coupling and bring the critical temperature to 13 K. This shows a rather high critical temperature, tunable by surface termination, making this 2D carbide an interesting test bed for low-dimensional superconductivity. △ Less

Submitted 10 February, 2017; originally announced February 2017.

A Review on Mechanics and Mechanical Properties of 2D Materials - Graphene and Beyond

Authors: Deji Akinwande, Christopher J. Brennan, J. Scott Bunch, Philip Egberts, Jonathan R. Felts, Huajian Gao, Rui Huang, Joon-Seok Kim, Teng Li, Yao Li, Kenneth M. Liechti, Nanshu Lu, Harold S. Park, Evan J. Reed, Peng Wang, Boris I. Yakobson, Teng Zhang, Yong-Wei Zhang, Yao Zhou, Yong Zhu

Abstract: Since the first successful synthesis of graphene just over a decade ago, a variety of two-dimensional (2D) materials (e.g., transition metal-dichalcogenides, hexagonal boron-nitride, etc.) have been discovered. Among the many unique and attractive properties of 2D materials, mechanical properties play important roles in manufacturing, integration and performance for their potential applications. M… ▽ More Since the first successful synthesis of graphene just over a decade ago, a variety of two-dimensional (2D) materials (e.g., transition metal-dichalcogenides, hexagonal boron-nitride, etc.) have been discovered. Among the many unique and attractive properties of 2D materials, mechanical properties play important roles in manufacturing, integration and performance for their potential applications. Mechanics is indispensable in the study of mechanical properties, both experimentally and theoretically. The coupling between the mechanical and other physical properties (thermal, electronic, optical) is also of great interest in exploring novel applications, where mechanics has to be combined with condensed matter physics to establish a scalable theoretical framework. Moreover, mechanical interactions between 2D materials and various substrate materials are essential for integrated device applications of 2D materials, for which the mechanics of interfaces (adhesion and friction) has to be developed for the 2D materials. Here we review recent theoretical and experimental works related to mechanics and mechanical properties of 2D materials. While graphene is the most studied 2D material to date, we expect continual growth of interest in the mechanics of other 2D materials beyond graphene. △ Less

Submitted 4 November, 2016; originally announced November 2016.

Elasticity, Flexibility and Ideal Strength of Borophenes

Authors: Zhuhua Zhang, Yang Yang, Evgeni S. Penev, Boris I. Yakobson

Abstract: We study the mechanical properties of two-dimensional (2D) boron, borophenes, by first-principles calculations. The recently synthesized borophene with 1/6 concentration of hollow hexagons (HH) is shown to have in-plane modulus C up to 210 N/m and bending stiffness as low as D = 0.39 eV. Thus, its Foppl-von Karman number per unit area, defined as C/D, reaches 568 nm-2, over twofold higher than gra… ▽ More We study the mechanical properties of two-dimensional (2D) boron, borophenes, by first-principles calculations. The recently synthesized borophene with 1/6 concentration of hollow hexagons (HH) is shown to have in-plane modulus C up to 210 N/m and bending stiffness as low as D = 0.39 eV. Thus, its Foppl-von Karman number per unit area, defined as C/D, reaches 568 nm-2, over twofold higher than graphene's value, establishing the borophene as one of the most flexible materials. Yet, the borophene has a specific modulus of 346 m2/s2 and ideal strengths of 16 N/m, rivaling those (453 m2/s2 and 34 N/m) of graphene. In particular, its structural fluxionality enabled by delocalized multi-center chemical bonding favors structural phase transitions under tension, which result in exceptionally small breaking strains yet highly ductile breaking behavior. These mechanical properties can be further tailored by varying the HH concentration, and the boron sheet without HHs can even be stiffer than graphene against tension. The record high flexibility combined with excellent elasticity in boron sheets can be utilized for designing composites and flexible systems. △ Less

Submitted 11 January, 2017; v1 submitted 23 September, 2016; originally announced September 2016.

Comments: 13 pages, 5 figures

Journal ref: Advanced Functional Materials, 2017

Earth-abundant and Non-toxic SiX (X=S, Se) Monolayers as Highly Efficient Thermoelectric Materials

Authors: Ji-Hui Yang, Qinghong Yuan, Huixiong Deng, Su-Huai Wei, Boris I. Yakobson

Abstract: Current thermoelectric (TE) materials often have low performance or contain less abundant and/or toxic elements, thus limiting their large-scale applications. Therefore, new TE materials with high efficiency and low cost are strongly desirable. Here we demonstrate that, SiS and SiSe monolayers made from non-toxic and earth-abundant elements intrinsically have low thermal conductivities arising fro… ▽ More Current thermoelectric (TE) materials often have low performance or contain less abundant and/or toxic elements, thus limiting their large-scale applications. Therefore, new TE materials with high efficiency and low cost are strongly desirable. Here we demonstrate that, SiS and SiSe monolayers made from non-toxic and earth-abundant elements intrinsically have low thermal conductivities arising from their low-frequency optical phonon branches with large overlaps with acoustic phonon modes, which is similar to the state-of-the-art experimentally demonstrated material SnSe with a layered structure. Together with high thermal power factors due to their two-dimensional nature, they show promising TE performances with large figure of merit (ZT) values exceeding 1 or 2 over a wide range of temperatures. We establish some basic understanding of identifying layered materials with low thermal conductivities, which can guide and stimulate the search and study of other layered materials for TE applications. △ Less

Submitted 9 September, 2016; originally announced September 2016.

Comments: 18 pages, 3 figures

Journal ref: J. Phys. Chem. C, 2016, 120, 24682

Self-optimizing layered hydrogen evolution catalyst with high basal-plane activity

Authors: Yuanyue Liu, **gjie Wu, Ken P. Hackenberg, **g Zhang, Y. Morris Wang, Yingchao Yang, Kunttal Keyshar, **g Gu, Tadashi Ogitsu, Robert Vajtai, Jun Lou, Pulickel M. Ajayan, Brandon C. Wood, Boris I. Yakobson

Abstract: Hydrogen is a promising energy carrier and key agent for many industrial chemical processes1. One method for generating hydrogen sustainably is via the hydrogen evolution reaction (HER), in which electrochemical reduction of protons is mediated by an appropriate catalyst-traditionally, an expensive platinum-group metal. Scalable production requires catalyst alternatives that can lower materials or… ▽ More Hydrogen is a promising energy carrier and key agent for many industrial chemical processes1. One method for generating hydrogen sustainably is via the hydrogen evolution reaction (HER), in which electrochemical reduction of protons is mediated by an appropriate catalyst-traditionally, an expensive platinum-group metal. Scalable production requires catalyst alternatives that can lower materials or processing costs while retaining the highest possible activity. Strategies have included dilute alloying of Pt2 or employing less expensive transition metal alloys, compounds or heterostructures (e.g., NiMo, metal phosphides, pyrite sulfides, encapsulated metal nanoparticles)3-5. Recently, low-cost, layered transition-metal dichalcogenides (MX2)6 based on molybdenum and tungsten have attracted substantial interest as alternative HER catalysts7-11. These materials have high intrinsic per-site HER activity; however, a significant challenge is the limited density of active sites, which are concentrated at the layer edges.8,10,11. Here we use theory to unravel electronic factors underlying catalytic activity on MX2 surfaces, and leverage the understanding to report group-5 MX2 (H-TaS2 and H-NbS2) electrocatalysts whose performance instead derives from highly active basal-plane sites. Beyond excellent catalytic activity, they are found to exhibit an unusual ability to optimize their morphology for enhanced charge transfer and accessibility of active sites as the HER proceeds. This leads to long cycle life and practical advantages for scalable processing. The resulting performance is comparable to Pt and exceeds all reported MX2 candidates. △ Less

Submitted 19 August, 2016; originally announced August 2016.

Highly Itinerant Atomic Vacancies in Phosphorene

Authors: Yongqing Cai, Qingqing Ke, Gang Zhang, Boris I. Yakobson, Yong-Wei Zhang

Abstract: Using detailed first-principles calculations, we investigate the hop** rate of vacancies in phosphorene, an emerging elemental 2D material besides graphene. Our work predicts that a direct observation of these mono-vacancies (MVs), showing a highly mobile and anisotropic motion, is possible only at low temperatures around 70 K or below where the thermal activity is greatly suppressed. At room te… ▽ More Using detailed first-principles calculations, we investigate the hop** rate of vacancies in phosphorene, an emerging elemental 2D material besides graphene. Our work predicts that a direct observation of these mono-vacancies (MVs), showing a highly mobile and anisotropic motion, is possible only at low temperatures around 70 K or below where the thermal activity is greatly suppressed. At room temperature, the motion of a MV is sixteen orders faster than that in graphene, because of the low diffusion barrier of 0.3 eV. Built-in strain associated with the vacancies extends far along the zigzag direction while attenuating rapidly along the armchair direction. We reveal new features of the motion of di-vacancies (DVs) in phosphorene via multiple dissociation-recombination processes of vacancies owing to a small energy cost of ~ 1.05 eV for the splitting of a DV into two MVs. Furthermore, we find that uniaxial tensile strain along the zigzag direction can promote the motion of MVs, while the tensile strain along the armchair direction has the opposite effect. These itinerant features of vacancies, rooted in the unique puckering structure facilitating bond reorganization, enable phosphorene to be a bright new opportunity to broaden the knowledge of the evolution of vacancies, and a proper control of the exceedingly active and anisotropic movement of the vacancies should be critical for applications based on phosphorene. △ Less

Submitted 27 July, 2016; v1 submitted 15 July, 2016; originally announced July 2016.

Comments: accepted by JACS

Journal ref: J. Am. Chem. Soc., 2016, 138 (32), pp 10199-10206

A MoS2-based capacitive displacement sensor for DNA sequencing

Authors: A. Smolyanitsky, B. I. Yakobson, T. A. Wassenaar, E. Paulechka, K. Kroenlein

Abstract: We propose an aqueous functionalized molybdenum disulfide nanoribbon suspended over a solid electrode as the first capacitive displacement sensor aimed at determining the DNA sequence. The detectable sequencing events arise from the combination of Watson-Crick base-pairing, one of nature's most basic lock-and-key-binding mechanisms, with the ability of appropriately sized atomically thin membranes… ▽ More We propose an aqueous functionalized molybdenum disulfide nanoribbon suspended over a solid electrode as the first capacitive displacement sensor aimed at determining the DNA sequence. The detectable sequencing events arise from the combination of Watson-Crick base-pairing, one of nature's most basic lock-and-key-binding mechanisms, with the ability of appropriately sized atomically thin membranes to flex substantially in response to sub-nanonewton forces. We employ carefully designed numerical simulations and theoretical estimates to demonstrate excellent (79 % to 86 %) raw target detection accuracy at ~70 million bases per second and electrical measurability of the detected events. In addition, we demonstrate reliable detection of repeated DNA motifs. Finally, we argue that the use of a nanoscale opening (nanopore) is not requisite for the operation of the proposed sensor and present a simplified sensor geometry without the nanopore as part of the sensing element. Our results therefore potentially suggest a realistic, inherently base-specific, high-throughput electronic DNA sequencing device as a cost-effective de-novo alternative to the existing methods. △ Less

Submitted 13 September, 2016; v1 submitted 22 June, 2016; originally announced June 2016.

Comments: 28 pages, 8 figures

High-throughput screening of metal-porphyrin-like graphenes for selective capture of carbon dioxide

Authors: Hyeonhu Bae, Minwoo Park, Byungryul Jang, Yura Kang, **woo Park, Hosik Lee, Haegeun Chung, ChiHye Chung, Suklyun Hong, Yongkyung Kwon, Boris I. Yakobson, Hoonkyung Lee

Abstract: Nano-materials, such as metal-organic frameworks, have been considered to capture CO$_2$. However, their application has been limited largely because they exhibit poor selectivity for flue gases and low capture capacity under low pressures. We perform a high-throughput screening for selective CO$_2$ capture from flue gases by using first principles thermodynamics. We find that elements with empty… ▽ More Nano-materials, such as metal-organic frameworks, have been considered to capture CO$_2$. However, their application has been limited largely because they exhibit poor selectivity for flue gases and low capture capacity under low pressures. We perform a high-throughput screening for selective CO$_2$ capture from flue gases by using first principles thermodynamics. We find that elements with empty d orbitals selectively attract CO$_2$ from gaseous mixtures under low CO$_2$ pressures at 300 K and release it at ~450 K. CO$_2$ binding to elements involves hybridization of the metal d orbitals with the CO$_2$ $π$ orbitals and CO$_2$-transition metal complexes were observed in experiments. This result allows us to perform high-throughput screening to discover novel promising CO$_2$ capture materials with empty d orbitals and predict their capture performance under various conditions. Moreover, these findings provide physical insights into selective CO$_2$ capture and open a new path to explore CO$_2$ capture materials. △ Less

Submitted 2 June, 2016; v1 submitted 4 January, 2016; originally announced January 2016.

Comments: 17 pages, 6 figures

Journal ref: Scientific Reports 6, 21788 (2016)

Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light-matter Interactions

Authors: Lin Niu, Xinfeng Liu, Chunxiao Cong, Chunyang Wu, Di Wu, Tay Rong Chang, Hong Wang, Qingsheng Zeng, Jiadong Zhou, Xingli Wang, Wei Fu, Peng Yu, Qundong Fu, Sina Najmaei, Zhuhua Zhang, Boris I. Yakobson, Beng Kang Tay, Wu Zhou, Horng Tay Jeng, Hsin Lin, Tze Chien Sum, Chuanhong **, Haiyong He, Ting Yu, Zheng Liu

Abstract: Van der Waals (vdW) solids, as a new type of artificial materials that consist of alternating layers bonded by weak interactions, have shed light on fascinating optoelectronic device concepts. As a result, a large variety of vdW devices have been engineered via layer-by-layer stacking of two-dimensional materials, although shadowed by the difficulties of fabrication. Alternatively, direct growth o… ▽ More Van der Waals (vdW) solids, as a new type of artificial materials that consist of alternating layers bonded by weak interactions, have shed light on fascinating optoelectronic device concepts. As a result, a large variety of vdW devices have been engineered via layer-by-layer stacking of two-dimensional materials, although shadowed by the difficulties of fabrication. Alternatively, direct growth of vdW solids has proven as a scalable and swift way, highlighted by the successful synthesis of graphene/h-BN and transition metal dichalcogenides (TMDs) vertical heterostructures from controlled vapor deposition. Here, we realize high-quality organic and inorganic vdW solids, using methylammonium lead halide (CH3NH3PbI3) as the organic part (organic perovskite) and 2D inorganic monolayers as counterparts. By stacking on various 2D monolayers, the vdW solids behave dramatically different in light emission. Our studies demonstrate that h-BN monolayer is a great complement to organic perovskite for preserving its original optical properties. As a result, organic/h-BN vdW solid arrays are patterned for red light emitting. This work paves the way for designing unprecedented vdW solids with great potential for a wide spectrum of applications in optoelectronics. △ Less

Submitted 18 June, 2015; v1 submitted 10 June, 2015; originally announced June 2015.

Kinetically determined shapes of grain boundaries in CVD graphene

Authors: Ksenia V. Bets, Vasilii I. Artyukhov, Boris I. Yakobson

Abstract: Predicting the shape of grain boundaries is essential to control results of the growth of large graphene crystals. A global energy minimum search predicting the most stable final structure contradicts experimental observations. Here we present Monte Carlo simulation of kinetic formation of grain boundaries (GB) in graphene during collision of two growing graphene flakes. Analysis of the resulting… ▽ More Predicting the shape of grain boundaries is essential to control results of the growth of large graphene crystals. A global energy minimum search predicting the most stable final structure contradicts experimental observations. Here we present Monte Carlo simulation of kinetic formation of grain boundaries (GB) in graphene during collision of two growing graphene flakes. Analysis of the resulting GBs for the full range of misorientation angles $α$ allowed us to identify a hidden (from post facto analysis such as microscopy) degree of freedom - the edge misorientation angle $β$. Edge misorientation characterizes initial structure rather than final structure and therefore provides more information about growth conditions. Use of $β$ enabled us to explain disagreements between the experimental observations and theoretical work. Finally, we report an analysis of an interesting special case of zero-tilt GBs for which structure is determined by two variables describing the relative shift of initial islands. We thereby present analysis of the full range of tilt GB ( $β\neq$ 0) and translational GB ( $β$ = 0). Based on our findings we propose strategies of controlling the GB morphology in experiments, which paves the way to a better control over graphene structure and properties for advanced applications. △ Less

Submitted 14 December, 2014; originally announced December 2014.

Why do nanotubes grow chiral?

Authors: Vasilii I. Artyukhov, Evgeni S. Penev, Boris I. Yakobson

Abstract: Carbon nanotubes (CNT) hold enormous technological promise. It can only be harnessed if one controls in a practical way the CNT chirality, the feature of the tubular carbon topology that governs all the CNT properties---electronic, optical, mechanical. Experiments in catalytic growth over the last decade have repeatedly revealed a puzzling strong preference towards minimally-chiral (near-armchair)… ▽ More Carbon nanotubes (CNT) hold enormous technological promise. It can only be harnessed if one controls in a practical way the CNT chirality, the feature of the tubular carbon topology that governs all the CNT properties---electronic, optical, mechanical. Experiments in catalytic growth over the last decade have repeatedly revealed a puzzling strong preference towards minimally-chiral (near-armchair) CNT, challenging any existing hypotheses and turning chirality control ever more tantalizing yet leaving its understanding elusive. Here we combine the CNT/catalyst interface thermodynamics with the kinetic growth theory to show that the unusual near-armchair peaks emerge from the two antagonistic trends: energetic preference towards achiral CNT/catalyst interfaces vs. faster growth of chiral CNT. This narrow distribution is profoundly related with the peaked behavior of a simple function, x*exp(-x). △ Less

Submitted 29 May, 2014; originally announced May 2014.

Journal ref: Nature Communications 5, 4892 (2014)

Breaking of symmetry in graphene growth on metal substrates

Authors: Vasilii I. Artyukhov, Yufeng Hao, Rodney S. Ruoff, Boris I. Yakobson

Abstract: In graphene growth, island symmetry can become lower than the intrinsic symmetries of both graphene and the substrate. First-principles calculations and Monte Carlo modeling explain the shapes observed in our experiments and earlier studies for various metal surface symmetries. For equilibrium shape, edge energy variations $δE$ manifest in distorted hexagons with different ground-state edge struct… ▽ More In graphene growth, island symmetry can become lower than the intrinsic symmetries of both graphene and the substrate. First-principles calculations and Monte Carlo modeling explain the shapes observed in our experiments and earlier studies for various metal surface symmetries. For equilibrium shape, edge energy variations $δE$ manifest in distorted hexagons with different ground-state edge structures. In growth or nucleation, energy variation enters exponentially as $\sim e^{δE / k_{B} T}$, strongly amplifying the symmetry breaking, up to completely changing the shapes to triangular, ribbon-like, or rhombic. △ Less

Submitted 12 March, 2015; v1 submitted 22 May, 2014; originally announced May 2014.

Journal ref: Phys. Rev. Lett. 114, 115502 (2015)

Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS$_2$ and WS$_2$

Authors: Luqing Wang, Alex Kutana, Boris I. Yakobson

Abstract: Monolayer transition metal dichalcogenides are promising materials for photoelectronic devices. Among them, molybdenum disulphide (MoS$_2$) and tungsten disulphide (WS$_2$) are some of the best candidates due to their favorable band gap values and band edge alignments. Here we consider various perturbative corrections to the DFT electronic structure, e.g. GW, spin-orbit coupling, as well as many-b… ▽ More Monolayer transition metal dichalcogenides are promising materials for photoelectronic devices. Among them, molybdenum disulphide (MoS$_2$) and tungsten disulphide (WS$_2$) are some of the best candidates due to their favorable band gap values and band edge alignments. Here we consider various perturbative corrections to the DFT electronic structure, e.g. GW, spin-orbit coupling, as well as many-body excitonic and trionic effects, and calculate accurate band gaps as a function of homogeneous strain in these materials. We show that all of these corrections are of comparable magnitudes and need to be included in order to obtain an accurate electronic structure. We calculate the strain at which the direct-to-indirect gap transition occurs. After considering all contributions, the direct to indirect gap transition strain is found to be at 2.7% in MoS$_2$ and 3.9% in WS$_2$. These values are generally higher than the previously reported theoretical values. △ Less

Submitted 15 July, 2014; v1 submitted 7 May, 2014; originally announced May 2014.

Comments: 9 pages, 4 figures, 1 table

Assessing carbon-based anodes for lithium-ion batteries: A universal description of charge-transfer binding

Authors: Yuanyue Liu, Y. Morris Wang, Boris I. Yakobson, Brandon C. Wood

Abstract: Many key performance characteristics of carbon-based lithium-ion battery anodes are largely determined by the strength of binding between lithium (Li) and sp2 carbon (C), which can vary significantly with subtle changes in substrate structure, chemistry, and morphology. Here, we use density functional theory calculations to investigate the interactions of Li with a wide variety of sp2 C substrates… ▽ More Many key performance characteristics of carbon-based lithium-ion battery anodes are largely determined by the strength of binding between lithium (Li) and sp2 carbon (C), which can vary significantly with subtle changes in substrate structure, chemistry, and morphology. Here, we use density functional theory calculations to investigate the interactions of Li with a wide variety of sp2 C substrates, including pristine, defective, and strained graphene; planar C clusters; nanotubes; C edges; and multilayer stacks. In almost all cases, we find a universal linear relation between the Li-C binding energy and the work required to fill previously unoccupied electronic states within the substrate. This suggests that Li capacity is predominantly determined by two key factors -- namely, intrinsic quantum capacitance limitations and the absolute placement of the Fermi level. This simple descriptor allows for straightforward prediction of the Li-C binding energy and related battery characteristics in candidate C materials based solely on the substrate electronic structure. It further suggests specific guidelines for designing more effective C-based anodes. The method should be broadly applicable to charge-transfer adsorption on planar substrates, and provides a phenomenological connection to established principles in supercapacitor and catalyst design. △ Less

Submitted 26 June, 2014; v1 submitted 26 January, 2014; originally announced January 2014.

Comments: accepted by Physical Review Letters

Site-Percolation Threshold of Carbon Nanotube Fibers: Fast Inspection of Percolation with Markov Stochastic Theory

Authors: Fangbo Xu, Zhi** Xu, Boris I. Yakobson

Abstract: We present a site-percolation model based on a modified FCC lattice, as well as an efficient algorithm of inspecting percolation which takes advantage of the Markov stochastic theory, in order to study the percolation threshold of carbon nanotube (CNT) fibers. Our Markov-chain based algorithm carries out the inspection of percolation by performing repeated sparse matrix-vector multiplications, whi… ▽ More We present a site-percolation model based on a modified FCC lattice, as well as an efficient algorithm of inspecting percolation which takes advantage of the Markov stochastic theory, in order to study the percolation threshold of carbon nanotube (CNT) fibers. Our Markov-chain based algorithm carries out the inspection of percolation by performing repeated sparse matrix-vector multiplications, which allows parallelized computation to accelerate the inspection for a given configuration. With this approach, we determine that the site-percolation transition of CNT fibers occurs at p_c =0.1533+-0.0013, and analyze the dependence of the effective percolation threshold (corresponding to 0.5 percolation probability) on the length and the aspect ratio of a CNT fiber on a finite-size-scaling basis. We also discuss the aspect ratio dependence of percolation probability with various values of p (not restricted to p_c). △ Less

Submitted 8 January, 2014; originally announced January 2014.

Comments: 21 pages, 6 figures

Probing the Synthesis of Two-Dimensional Boron by First-Principles Computations

Authors: Yuanyue Liu, Evgeni S. Penev, Boris I. Yakobson

Abstract: Boron synthesis, in theory: Although two-dimensional boron sheets have attracted considerable interest because of their theoretically predicted properties, synthesis of such sheets remains a challenge. The feasibility of different synthetic methods for two-dimensional boron sheets was assessed using first-principles calculations, possibly paving the way towards its application in nanoelectronics. Boron synthesis, in theory: Although two-dimensional boron sheets have attracted considerable interest because of their theoretically predicted properties, synthesis of such sheets remains a challenge. The feasibility of different synthetic methods for two-dimensional boron sheets was assessed using first-principles calculations, possibly paving the way towards its application in nanoelectronics. △ Less

Submitted 2 December, 2013; originally announced December 2013.

Journal ref: Angewandte Chemie International Edition, 2013, 52, 3156

Feasibility of Lithium Storage on Graphene and Its Derivatives

Authors: Yuanyue Liu, Vasilii I. Artyukhov, Mingjie Liu, Avetik R. Harutyunyan, Boris I. Yakobson

Abstract: Nanomaterials are anticipated to be promising storage media, owing to their high surface-to-mass ratio. The high hydrogen capacity achieved by using graphene has reinforced this opinion and motivated investigations of the possibility to use it to store another important energy carrier - lithium (Li). While the first-principles computations show that the Li capacity of pristine graphene, limited by… ▽ More Nanomaterials are anticipated to be promising storage media, owing to their high surface-to-mass ratio. The high hydrogen capacity achieved by using graphene has reinforced this opinion and motivated investigations of the possibility to use it to store another important energy carrier - lithium (Li). While the first-principles computations show that the Li capacity of pristine graphene, limited by Li clustering and phase separation, is lower than that offered by Li intercalation in graphite, we explore the feasibility of modifying graphene for better Li storage. It is found that certain structural defects in graphene can bind Li stably, yet more efficacious approach is through substitution do** with boron (B). In particular, the layered C3B compound stands out as a promising Li storage medium. The monolayer C3B has a capacity of 714 mAh/g (as Li1.25C3B), and the capacity of stacked C3B is 857 mAh/g (as Li1.5C3B), which is about twice as large as graphite's 372 mAh/g (as LiC6). Our results help clarify the mechanism of Li storage in low-dimensional materials, and shed light on the rational design of nano-architectures for energy storage. △ Less

Submitted 22 November, 2013; originally announced November 2013.

Journal ref: J. Phys. Chem. Lett, 2013, 4, 1737

Constructing Metallic Nanoroad on MoS2 Monolayer via Hydrogenation

Authors: Yongqing Cai, Zhaoqiang Bai, Hui Pan, Yuan ** Feng, Boris I. Yakobson, Yong-Wei Zhang

Abstract: Monolayer transition metal dichalcogenides recently emerge as a new family of two-dimensional material potentially suitable for numerous applications in electronic and optoelectronic devices due to the presence of finite band gap. Many proposed applications require efficient transport of charge carriers within these semiconducting monolayers. However, how to construct a stable conducting nanoroad… ▽ More Monolayer transition metal dichalcogenides recently emerge as a new family of two-dimensional material potentially suitable for numerous applications in electronic and optoelectronic devices due to the presence of finite band gap. Many proposed applications require efficient transport of charge carriers within these semiconducting monolayers. However, how to construct a stable conducting nanoroad on these atomically thin semiconductors is still a challenge. Here we demonstrate that hydrogenation on the surface of MoS2 monolayer induces a semiconductor-metal transition, and strip-patterned hydrogenation is able to generate a conducting nanoroad. The band-gap closing arises from the formation of in-gap hybridized states mainly consisting of Mo 4d orbitals, as well as the electron donation from hydrogen to the lattice host. Ballistic conductance calculations reveal that such a nanoroad on the MoS2 surface exhibits an integer conductance, indicating small carrier scattering, and thus is ideal for serving as a conducting channel or interconnect without compromising the mechanical and structural integrity of the monolayer. △ Less

Submitted 1 October, 2013; originally announced October 2013.

Journal ref: Nanoscale, 2014, 6, 1691-1697

Intrinsic Magnetism of Grain Boundaries in Two-dimensional Metal Dichalcogenides

Authors: Zhuhua Zhang, Xiaolong Zou, Vincent H. Crespi, Boris I. Yakobson

Abstract: Grain boundaries (GBs) are structural imperfections that typically degrade the performance of materials. Here we show that dislocations and GBs in two-dimensional (2D) metal dichalcogenides MX2 (M = Mo, W; X = S, Se) can actually improve the material by giving it a qualitatively new physical property: magnetism. The dislocations studied all have a substantial magnetic moment of ~1 Bohr magneton. I… ▽ More Grain boundaries (GBs) are structural imperfections that typically degrade the performance of materials. Here we show that dislocations and GBs in two-dimensional (2D) metal dichalcogenides MX2 (M = Mo, W; X = S, Se) can actually improve the material by giving it a qualitatively new physical property: magnetism. The dislocations studied all have a substantial magnetic moment of ~1 Bohr magneton. In contrast, dislocations in other well-studied 2D materials are typically non-magnetic. GBs composed of pentagon-heptagon pairs interact ferromagnetically and transition from semiconductor to half-metal or metal as a function of tilt angle and/or do** level. When the tilt angle exceeds 47° the structural energetics favor square-octagon pairs and the GB becomes an antiferromagnetic semiconductor. These exceptional magnetic properties arise from an interplay of dislocation-induced localized states, do**, and locally unbalanced stoichiometry. Purposeful engineering of topological GBs may be able to convert MX2 into a promising 2D magnetic semiconductor. △ Less

Submitted 20 August, 2013; originally announced August 2013.

Comments: 11 pages, 4 figures

Carbyne from first principles: Chain of C atoms, a nanorod or a nanorope?

Authors: Mingjie Liu, Vasilii I. Artyukhov, Hoonkyung Lee, Fangbo Xu, Boris I. Yakobson

Abstract: We report an extensive study of the properties of carbyne using first-principles calculations. We investigate carbyne's mechanical response to tension, bending, and torsion deformations. Under tension, carbyne is about twice as stiff as the stiffest known materials and has an unrivaled specific strength of up to 7.5*10^7 Nm/kg, requiring a force of ~10 nN to break a single atomic chain. Carbyne ha… ▽ More We report an extensive study of the properties of carbyne using first-principles calculations. We investigate carbyne's mechanical response to tension, bending, and torsion deformations. Under tension, carbyne is about twice as stiff as the stiffest known materials and has an unrivaled specific strength of up to 7.5*10^7 Nm/kg, requiring a force of ~10 nN to break a single atomic chain. Carbyne has a fairly large room-temperature persistence length of about 14 nm. Surprisingly, the torsional stiffness of carbyne can be zero but can be 'switched on' by appropriate functional groups at the ends. Further, under appropriate termination, carbyne can be switched into a magnetic-semiconductor state by mechanical twisting. We reconstruct the equivalent continuum-elasticity representation, providing the full set of elastic moduli for carbyne, showing its extreme mechanical performance (e.g. a nominal Young's modulus of 32.7 TPa with an effective mechanical thickness of 0.772 A). We also find an interesting coupling between strain and band gap of carbyne, which is strongly increased under tension, from 3.2 to 4.4 eV under a 10% strain. Finally, we study the performance of carbyne as a nanoscale electrical cable, and estimate its chemical stability against self-aggregation, finding an activation barrier of 0.6 eV for the carbyne-carbyne cross-linking reaction and an equilibrium cross-link density for two parallel carbyne chains of 1 cross-link per 17 C atoms (2.2 nm). △ Less

Submitted 2 December, 2013; v1 submitted 9 August, 2013; originally announced August 2013.

Journal ref: ACS Nano, 2013, 7 (11), pp 10075-10082

Mechanically induced metal-insulator transition in carbyne

Authors: Vasilii I. Artyukhov, Mingjie Liu, Boris I. Yakobson

Abstract: First-principles calculations for carbyne under strain predict that the Peierls transition from symmetric cumulene to broken-symmetry polyyne structure is enhanced as the material is stretched. Interpretation within a simple and instructive analytical model suggests that this behavior is valid for arbitrary 1D metals. Further, numerical calculations of the anharmonic quantum vibrational structure… ▽ More First-principles calculations for carbyne under strain predict that the Peierls transition from symmetric cumulene to broken-symmetry polyyne structure is enhanced as the material is stretched. Interpretation within a simple and instructive analytical model suggests that this behavior is valid for arbitrary 1D metals. Further, numerical calculations of the anharmonic quantum vibrational structure of carbyne show that zero-point atomic vibrations alone eliminate the Peierls distortion in a mechanically free chain, preserving the cumulene symmetry. The emergence and increase of Peierls dimerization under tension then implies a qualitative transition between the two forms, which our computations place around 3% strain. Thus, zero-point vibrations and mechanical strain jointly produce a change in symmetry resulting in the transition from metallic to insulating state. In any practical realization, it is important that the effect is also chemically modulated by the choice of terminating groups. Our findings are promising for applications such as electromechanical switching and band gap tuning via strain, and besides carbyne itself, they directly extend to numerous other systems that show Peierls distortion. △ Less

Submitted 1 June, 2013; v1 submitted 28 February, 2013; originally announced February 2013.

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Authors: Sina Najmaei, Zheng Liu, Wu Zhou, Xiaolong Zou, Gang Shi, Sidong Lei, Boris I. Yakobson, Juan-Carlos Idrobo, Pulickel M. Ajayan, Jun Lou

Abstract: Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleat… ▽ More Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area single- and few-layered films. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined and first-principles calculations are applied to investigate their energy landscape. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. The uniformity in thickness, large grain sizes, and excellent electrical performance of these materials signify the high quality and scalable synthesis of the molybdenum disulfide atomic layers. △ Less

Submitted 13 January, 2013; originally announced January 2013.

Comments: Submitted on Jan 6th 2013

Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2

Authors: Hongliang Shi, Hui Pan, Yong-Wei Zhang, Boris I. Yakobson

Abstract: The quasiparticle (QP) band structures of both strainless and strained monolayer MoS$_{2}$ are investigated using more accurate many body perturbation \emph{GW} theory and maximally localized Wannier functions (MLWFs) approach. By solving the Bethe-Salpeter equation (BSE) including excitonic effects on top of the partially self-consistent \emph{GW$_{0}$} (sc\emph{GW$_{0}$}) calculation, the predic… ▽ More The quasiparticle (QP) band structures of both strainless and strained monolayer MoS$_{2}$ are investigated using more accurate many body perturbation \emph{GW} theory and maximally localized Wannier functions (MLWFs) approach. By solving the Bethe-Salpeter equation (BSE) including excitonic effects on top of the partially self-consistent \emph{GW$_{0}$} (sc\emph{GW$_{0}$}) calculation, the predicted optical gap magnitude is in a good agreement with available experimental data. With increasing strain, the exciton binding energy is nearly unchanged, while optical gap is reduced significantly. The sc\emph{GW$_{0}$} and BSE calculations are also performed on monolayer WS$_{2}$, similar characteristics are predicted and WS$_{2}$ possesses the lightest effective mass at the same strain among monolayers Mo(S,Se) and W(S,Se). Our results also show that the electron effective mass decreases as the tensile strain increases, resulting in an enhanced carrier mobility. The present calculation results suggest a viable route to tune the electronic properties of monolayer transition-metal dichalcogenides (TMDs) using strain engineering for potential applications in high performance electronic devices. △ Less

Submitted 2 March, 2013; v1 submitted 24 November, 2012; originally announced November 2012.

Comments: 8 pages, 7 figures (submitted to PRB)

Journal ref: Phys. Rev. B 87, 155304 (2013)

Dislocations and Grain Boundaries in Two-Dimensional Boron Nitride

Authors: Yuanyue Liu, Xiaolong Zou, Boris I. Yakobson

Abstract: A new dislocation structure-square-octagon pair (4|8) is discovered in two-dimensional boron nitride (h-BN), via first-principles calculations. It has lower energy than corresponding pentagon-heptagon pairs (5|7), which contain unfavorable homo-elemental bonds. Based on the structures of dislocations, grain boundaries (GB) in BN are investigated. Depending on the tilt angle of grains, GB can be ei… ▽ More A new dislocation structure-square-octagon pair (4|8) is discovered in two-dimensional boron nitride (h-BN), via first-principles calculations. It has lower energy than corresponding pentagon-heptagon pairs (5|7), which contain unfavorable homo-elemental bonds. Based on the structures of dislocations, grain boundaries (GB) in BN are investigated. Depending on the tilt angle of grains, GB can be either polar (B-rich or N-rich), constituted by 5|7s, or un-polar, composed of 4|8s. The polar GBs carry net charges, positive at B-rich and negative at N-rich ones. In contrast to GBs in graphene which generally impede the electronic transport, polar GBs have smaller bandgap compared to perfect BN, which may suggest interesting electronic and optic applications. △ Less

Submitted 31 July, 2012; originally announced August 2012.

Journal ref: ACS Nano, ASAP, 2012

Graphene Nucleation on Transition Metal Surface: Structure Transformation and Role of the Metal Step Edge

Authors: Junfeng Gao, Joanne Yip, Jijun Zhao, Boris I. Yakobson, Feng Ding

Abstract: The nucleation of graphene on a transition metal (TM) surface, either on a terrace or near a step edge, is systematically explored using density functional theory (DFT) calculations and applying the two-dimensional (2D) crystal nucleation theory. Careful optimization of the supported carbon clusters, CN (with size N ranging from 1 to 24), on the Ni(111) surface indicates a ground state structure t… ▽ More The nucleation of graphene on a transition metal (TM) surface, either on a terrace or near a step edge, is systematically explored using density functional theory (DFT) calculations and applying the two-dimensional (2D) crystal nucleation theory. Careful optimization of the supported carbon clusters, CN (with size N ranging from 1 to 24), on the Ni(111) surface indicates a ground state structure transformation from a one-dimensional (1D) C chain to a two-dimensional (2D) sp2 C network at N ~ 10-12. Furthermore, the crucial parameters controlling graphene growth on the metal surface, nucleation barrier, nucleus size, and the nucleation rate on a terrace or near a step edge, are calculated. In agreement with numerous experimental observations, our analysis shows that graphene nucleation near a metal step edge is superior to that on a terrace. Based on our analysis, we propose the use of seeded graphene to synthesize high-quality graphene in large area. △ Less

Submitted 31 March, 2011; originally announced April 2011.

Comments: 19 pages, 6 figures, accepted in Journal of the American Chemical Society

Journal ref: J. Am. Chem. Soc., 2011, 133 (13), pp 5009-5015

The influence of size effect on the electronic and elastic properties of diamond films with nanometer thickness

Authors: Leonid A. Chernozatonskii, Pavel B. Sorokin, Alexander A. Kuzubov, Boris P. Sorokin, Alexander G. Kvashnin, Dmitry G. Kvashnin, Pavel V. Avramov, Boris I. Yakobson

Abstract: The atomic structure and physical properties of few-layered <111> oriented diamond nanocrystals (diamanes), covered by hydrogen atoms from both sides are studied using electronic band structure calculations. It was shown that energy stability linear increases upon increasing of the thickness of proposed structures. All 2D carbon films display direct dielectric band gaps with nonlinear quantum conf… ▽ More The atomic structure and physical properties of few-layered <111> oriented diamond nanocrystals (diamanes), covered by hydrogen atoms from both sides are studied using electronic band structure calculations. It was shown that energy stability linear increases upon increasing of the thickness of proposed structures. All 2D carbon films display direct dielectric band gaps with nonlinear quantum confinement response upon the thickness. Elastic properties of diamanes reveal complex dependence upon increasing of the number of <111> layers. All theoretical results were compared with available experimental data. △ Less

Submitted 31 March, 2011; originally announced March 2011.

Comments: 16 pages, 5 figures, 3 tables

Journal ref: J. Phys. Chem. C, 2011, 115 (1), pp 132-136

BN white graphene with `colorful' edges--the energies and morphology

Authors: Yuanyue Liu, Somnath Bhowmick, Boris I. Yakobson

Abstract: Interfaces play a key role in low dimensional materials like graphene or its boron nitrogen analog, white graphene. The edge energy of h-BN has not been reported as its lower symmetry makes it difficult to separate the opposite B-rich and N-rich zigzag sides. We report unambiguous energy values for arbitrary edges of BN, including the dependence on the elemental chemical potentials of B and N spec… ▽ More Interfaces play a key role in low dimensional materials like graphene or its boron nitrogen analog, white graphene. The edge energy of h-BN has not been reported as its lower symmetry makes it difficult to separate the opposite B-rich and N-rich zigzag sides. We report unambiguous energy values for arbitrary edges of BN, including the dependence on the elemental chemical potentials of B and N species. A useful manifestation of the additional Gibbs degree of freedom in the binary system, this dependence offers a way to control the morphology of pure BN or its carbon inclusions, and to engineer their electronic and magnetic properties. △ Less

Submitted 24 January, 2011; originally announced January 2011.

Patterning Nanoroads and Quantum Dots on Fluorinated Graphene

Authors: Morgana A. Ribas, Abhishek K. Singh, Pavel B. Sorokin, Boris I. Yakobson

Abstract: Using ab initio methods we have investigated the fluorination of graphene and find that different stoichiometric phases can be formed without a nucleation barrier, with the complete "2D-Teflon" CF phase being thermodynamically most stable. The fluorinated graphene is an insulator and turns out to be a perfect matrix-host for patterning nanoroads and quantum dots of pristine graphene. The electroni… ▽ More Using ab initio methods we have investigated the fluorination of graphene and find that different stoichiometric phases can be formed without a nucleation barrier, with the complete "2D-Teflon" CF phase being thermodynamically most stable. The fluorinated graphene is an insulator and turns out to be a perfect matrix-host for patterning nanoroads and quantum dots of pristine graphene. The electronic and magnetic properties of the nanoroads can be tuned by varying the edge orientation and width. The energy gaps between the highest occupied and lowest unoccupied molecular orbitals (HOMO-LUMO) of quantum dots are size-dependent and show a confinement typical of Dirac fermions. Furthermore, we study the effect of different basic coverage of F on graphene (with stoichiometries CF and C$_{4}$F) on the band gaps, and show the suitability of these materials to host quantum dots of graphene with unique electronic properties. △ Less

Submitted 25 January, 2011; v1 submitted 19 December, 2010; originally announced December 2010.

Comments: 12 pages, 7 figures, 1 table

Journal ref: Nano Research, 4 (1), 143-152, 2011

Stability of hydrogenated group-IV nanostructures: magic structures of diamond nanocrystals and Silicon quantum dots

Authors: Xiaobao Yang, Hu Xu, Yu-Jun Zhao, Boris I. Yakobson

Abstract: We have developed an effective model to investigate the energetic stability of hydrogenated group-IV nanostructures, followed by validations from first-principles calculations. It is found that the Hamiltonian of X$_{m}$H$_{n}$ (X=C, Si, Ge and Sn) can be expressed analytically by a linear combination of the atom numbers ($m$, $n$), indicating a dominating contribution of X$-$X and X$-$H local int… ▽ More We have developed an effective model to investigate the energetic stability of hydrogenated group-IV nanostructures, followed by validations from first-principles calculations. It is found that the Hamiltonian of X$_{m}$H$_{n}$ (X=C, Si, Ge and Sn) can be expressed analytically by a linear combination of the atom numbers ($m$, $n$), indicating a dominating contribution of X$-$X and X$-$H local interactions. As a result, we explain the stable nanostructures observed experimentally, and provide a reliable and efficient technique of searching the magic structures of diamond nanocrystals(Dia-NCs) and Silicon quantum dots(SiQDs). △ Less

Submitted 1 October, 2010; originally announced October 2010.

Comments: 5 figures