Showing 1–13 of 13 results for author: Yagmurcukardes, M

Proton transport through nanoscale corrugations in two-dimensional crystals

Authors: O. J. Wahab, E. Daviddi, B. Xin, P. Z. Sun, E. Griffin, A. W. Colburn, D. Barry, M. Yagmurcukardes, F. M. Peeters, A. K. Geim, M. Lozada-Hidalgo, P. R. Unwin

Abstract: Defect-free graphene is impermeable to all atoms and ions at ambient conditions. Experiments that can resolve gas flows of a few atoms per hour through micrometre-sized membranes found that monocrystalline graphene is completely impermeable to helium, the smallest of atoms. Such membranes were also shown to be impermeable to all ions, including the smallest one, lithium. On the other hand, graphen… ▽ More Defect-free graphene is impermeable to all atoms and ions at ambient conditions. Experiments that can resolve gas flows of a few atoms per hour through micrometre-sized membranes found that monocrystalline graphene is completely impermeable to helium, the smallest of atoms. Such membranes were also shown to be impermeable to all ions, including the smallest one, lithium. On the other hand, graphene was reported to be highly permeable to protons, nuclei of hydrogen atoms. There is no consensus, however, either on the mechanism behind the unexpectedly high proton permeability or even on whether it requires defects in graphene's crystal lattice. Here using high resolution scanning electrochemical cell microscopy (SECCM), we show that, although proton permeation through mechanically-exfoliated monolayers of graphene and hexagonal boron nitride cannot be attributed to any structural defects, nanoscale non-flatness of 2D membranes greatly facilitates proton transport. The spatial distribution of proton currents visualized by SECCM reveals marked inhomogeneities that are strongly correlated with nanoscale wrinkles and other features where strain is accumulated. Our results highlight nanoscale morphology as an important parameter enabling proton transport through 2D crystals, mostly considered and modelled as flat, and suggest that strain and curvature can be used as additional degrees of freedom to control the proton permeability of 2D materials. △ Less

Submitted 8 May, 2023; originally announced May 2023.

Journal ref: Nature 2023

Wien effect in interfacial water dissociation through proton-permeable graphene electrodes

Authors: J. Cai, E. Griffin, V. Guarochico-Moreira, D. Barry, B. Xin, M. Yagmurcukardes, S. Zhang, A. K. Geim, F. M. Peeters, M. Lozada-Hidalgo

Abstract: Strong electric fields can accelerate molecular dissociation reactions. The phenomenon known as the Wien effect was previously observed using high-voltage electrolysis cells that produced fields of about 10^7 V m-1, sufficient to accelerate the dissociation of weakly bound molecules (e.g., organics and weak electrolytes). The observation of the Wien effect for the common case of water dissociation… ▽ More Strong electric fields can accelerate molecular dissociation reactions. The phenomenon known as the Wien effect was previously observed using high-voltage electrolysis cells that produced fields of about 10^7 V m-1, sufficient to accelerate the dissociation of weakly bound molecules (e.g., organics and weak electrolytes). The observation of the Wien effect for the common case of water dissociation (H2O = H+ + OH-) has remained elusive. Here we study the dissociation of interfacial water adjacent to proton-permeable graphene electrodes and observe strong acceleration of the reaction in fields reaching above 10^8 V m-1. The use of graphene electrodes allow measuring the proton currents arising exclusively from the dissociation of interfacial water, while the electric field driving the reaction is monitored through the carrier density induced in graphene by the same field. The observed exponential increase in proton currents is in quantitative agreement with Onsager's theory. Our results also demonstrate that graphene electrodes can be valuable for the investigation of various interfacial phenomena involving proton transport. △ Less

Submitted 23 August, 2022; originally announced August 2022.

Report number: 13, 5776

Journal ref: Nature Communications (2022)

Gas permeation through graphdiyne-based nanoporous membranes

Authors: Zhihua Zhou, Yongtao Tan, Qian Yang, Achintya Bera, Zecheng Xiong, Mehmet Yagmurcukardes, Minsoo Kim, Yichao Zou, Guanghua Wang, Artem Mishchenko, Ivan Timokhin, Canbin Wang, Hao Wang, Chongyang Yang, Yizhen Lu, Radha Boya, Honggang Liao, Sarah Haigh, Huibiao Liu, Francois M. Peeters, Yuliang Li, Andre K. Geim, Sheng Hu

Abstract: Nanoporous membranes based on two dimensional materials are predicted to provide highly selective gas transport in combination with extreme permeability. Here we investigate membranes made from multilayer graphdiyne, a graphene-like crystal with a larger unit cell. Despite being nearly a hundred of nanometers thick, the membranes allow fast, Knudsen-type permeation of light gases such as helium an… ▽ More Nanoporous membranes based on two dimensional materials are predicted to provide highly selective gas transport in combination with extreme permeability. Here we investigate membranes made from multilayer graphdiyne, a graphene-like crystal with a larger unit cell. Despite being nearly a hundred of nanometers thick, the membranes allow fast, Knudsen-type permeation of light gases such as helium and hydrogen whereas heavy noble gases like xenon exhibit strongly suppressed flows. Using isotope and cryogenic temperature measurements, the seemingly conflicting characteristics are explained by a high density of straight-through holes (direct porosity of ~0.1%), in which heavy atoms are adsorbed on the walls, partially blocking Knudsen flows. Our work offers important insights into intricate transport mechanisms playing a role at nanoscale. △ Less

Submitted 2 July, 2022; originally announced July 2022.

Exponentially selective molecular sieving through angstrom pores

Authors: P. Z. Sun, M. Yagmurcukardes, R. Zhang, W. J. Kuang, M. Lozada-Hidalgo, B. L. Liu, H. -M. Cheng, F. C. Wang, F. M. Peeters, I. V. Grigorieva, A. K. Geim

Abstract: Two-dimensional crystals with angstrom-scale pores are widely considered as candidates for a next generation of molecular separation technologies aiming to provide extreme, exponentially large selectivity combined with high flow rates. No such pores have been demonstrated experimentally. Here we study gas transport through individual graphene pores created by low intensity exposure to low kV elect… ▽ More Two-dimensional crystals with angstrom-scale pores are widely considered as candidates for a next generation of molecular separation technologies aiming to provide extreme, exponentially large selectivity combined with high flow rates. No such pores have been demonstrated experimentally. Here we study gas transport through individual graphene pores created by low intensity exposure to low kV electrons. Helium and hydrogen permeate easily through these pores whereas larger species such as xenon and methane are practically blocked. Permeating gases experience activation barriers that increase quadratically with molecules' kinetic diameter, and the effective diameter of the created pores is estimated as ~2 angstroms, about one missing carbon ring. Our work reveals stringent conditions for achieving the long sought-after exponential selectivity using porous two-dimensional membranes and suggests limits on their possible performance. △ Less

Submitted 9 December, 2021; v1 submitted 6 April, 2021; originally announced April 2021.

Journal ref: Nature Communications 12, 7170 (2021)

First-Principles Prediction of Graphene-Like XBi (X=Si, Ge, Sn) Nanosheets

Authors: A. Bafekry, M. Yagmurcukardes, B. Akgenc, M. Ghergherehchi, B. Mortazavi

Abstract: Research progress on single-layer group III monochalcogenides have been increasing rapidly owing to their interesting physics. Herein, we predict the dynamically stable single-layer forms of XBi (X=Ge, Si, or Sn) by using density functional theory calculations. Phonon band dispersion calculations and ab-initio molecular dynamics simulations reveal the dynamical and thermal stability of predicted n… ▽ More Research progress on single-layer group III monochalcogenides have been increasing rapidly owing to their interesting physics. Herein, we predict the dynamically stable single-layer forms of XBi (X=Ge, Si, or Sn) by using density functional theory calculations. Phonon band dispersion calculations and ab-initio molecular dynamics simulations reveal the dynamical and thermal stability of predicted nanosheets. Raman spectra calculations indicate the existence of 5 Raman active phonon modes 3 of which are prominent and can be observed in a possible Raman measurement. Electronic band structures of the XBi single-layers investigated with and without spin-orbit coupling effects (SOC). Our results show that XBi single-layers show semiconducting property with the narrow band gap values without SOC. However only the single-layer SiBi is an indirect band gap semiconductor while GeBi and SnBi exhibit metallic behaviors by adding spin-orbit coupling effects. In addition, the calculated linear-elastic parameters indicate the soft nature of predicted monolayers. Moreover, our predictions for the thermoelectric properties of single-layer XBi reveal that SiBi is a good thermoelectric material with increasing temperature. Overall, it is proposed that single-layer XBi structures can be alternative, stable 2D single-layers with their varying electronic and thermoelectric properties. △ Less

Submitted 26 September, 2020; originally announced September 2020.

Hematite at its thinnest limit

Authors: C. Bacaksiz, M. Yagmurcukardes, F. M. Peeters, M. V. Milošević

Abstract: Motivated by the recent synthesis of two-dimensional $α$-Fe$_2$O$_3$ [Balan $et$ $al.$ Nat. Nanotech. 13, 602 (2018)], we analyze the structural, vibrational, electronic and magnetic properties of single- and few-layer $α$-Fe$_2$O$_3$ compared to bulk, by $ab-initio$ and Monte-Carlo simulations. We reveal how monolayer $α$-Fe$_2$O$_3$ (hematene) can be distinguished from the few-layer structures,… ▽ More Motivated by the recent synthesis of two-dimensional $α$-Fe$_2$O$_3$ [Balan $et$ $al.$ Nat. Nanotech. 13, 602 (2018)], we analyze the structural, vibrational, electronic and magnetic properties of single- and few-layer $α$-Fe$_2$O$_3$ compared to bulk, by $ab-initio$ and Monte-Carlo simulations. We reveal how monolayer $α$-Fe$_2$O$_3$ (hematene) can be distinguished from the few-layer structures, and how they all differ from bulk through observable Raman spectra. The optical spectra exhibit gradual shift of the prominent peak to higher energy, as well as additional features at lower energy when $α$-Fe$_2$O$_3$ is thinned down to a monolayer. Both optical and electronic properties have strong spin asymmetry, meaning that lower-energy optical and electronic activities are allowed for the single-spin state. Finally, our considerations of magnetic properties reveal that 2D hematite has anti-ferromagnetic ground state for all thicknesses, but the critical temperature for Morin transition increases with decreasing sample thickness. On all accounts, the link to available experimental data is made, and further measurements are prompted. △ Less

Submitted 26 February, 2020; originally announced February 2020.

Two-dimensional covalent crystals by chemical conversion of thin van der Waals materials

Authors: Vishnu Sreepal, Mehmet Yagmurcukardes, Kalangi S. Vasu, Daniel J. Kelly, Sarah F. R. Taylor, Vasyl G. Kravets, Zakhar Kudrynskyi, Zakhar D. Kovalyuk, Amalia Patanè, Alexander N. Grigorenko, Sarah J. Haigh, Christopher Hardacre, Laurence Eaves, Hasan Sahin, Andre K. Geim, Francois M. Peeters, Rahul R. Nair

Abstract: Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have been focused mainly on the surface growth of molecules in high vacuum. Here, we report an approach to making 2D crystals of covalent solids by chemical… ▽ More Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have been focused mainly on the surface growth of molecules in high vacuum. Here, we report an approach to making 2D crystals of covalent solids by chemical conversion of van der Waals layers. As an example, we use 2D indium selenide (InSe) obtained by exfoliation and converted it by direct fluorination into indium fluoride (InF3), which has a non-layered, rhombohedral structure and therefore cannot be possibly obtained by exfoliation. The conversion of InSe into InF3 is found to be feasible for thicknesses down to three layers of InSe, and the obtained stable InF3 layers are doped with selenium. We study this new 2D material by optical, electron transport and Raman measurements and show that it is a semiconductor with a direct bandgap of 2.2 eV, exhibiting high optical transparency across the visible and infrared spectral ranges. We also demonstrate the scalability of our approach by chemical conversion of large-area, thin InSe laminates obtained by liquid exfoliation into InF3 films. The concept of chemical conversion of cleavable thin van der Waals crystals into covalently-bonded non-cleavable ones opens exciting prospects for synthesizing a wide variety of novel atomically thin covalent crystals. △ Less

Submitted 20 August, 2019; originally announced August 2019.

Journal ref: Nano Lett.2019, 19, 6475, 2019

Electronic and Vibrational Properties of PbI 2 : From Bulk to Monolayer

Authors: Mehmet Yagmurcukardes, Francois M. Peeters, Hasan Sahin

Abstract: Using first-principles calculations, we study the dependence of the electronic and vibrational properties of multi-layered PbI 2 crystals on the number of layers and focus on the electronic-band structure and the Raman spectrum. Electronic-band structure calculations reveal that the direct or indirect semiconducting behavior of PbI 2 is strongly influenced by the number of layers. We find that at… ▽ More Using first-principles calculations, we study the dependence of the electronic and vibrational properties of multi-layered PbI 2 crystals on the number of layers and focus on the electronic-band structure and the Raman spectrum. Electronic-band structure calculations reveal that the direct or indirect semiconducting behavior of PbI 2 is strongly influenced by the number of layers. We find that at 3L-thickness there is a direct-to-indirect band gap transition (from bulk-to-monolayer). It is shown that in the Raman spectrum two prominent peaks, A 1g and E g , exhibit phonon hardening with increasing number of layers due to the inter-layer van der Waals interaction. Moreover, the Raman activity of the A 1g mode significantly increases with increasing number of layers due to the enhanced out-of-plane dielectric constant in the few-layer case. We further characterize rigid-layer vibrations of low-frequency inter-layer shear (C) and breathing (LB) modes in few-layer PbI 2 . A reduced mono-atomic (linear) chain model (LCM) provides a fairly accurate picture of the number of layers dependence of the low-frequency modes and it is shown also to be a powerful tool to study the inter-layer coupling strength in layered PbI 2 . △ Less

Submitted 24 July, 2018; originally announced July 2018.

Comments: To appear in Phys. Rev. B

Strain Map** In Single-Layer 2D Crystals Via Raman Activity

Authors: M. Yagmurcukardes, C. Bacaksiz, E. Unsal, B. Akbali, R. T. Senger, H. Sahin

Abstract: By performing density functional theory-based ab-initio calculations, Raman active phonon modes of novel single-layer two-dimensional (2D) materials and the effect of in-plane biaxial strain on the peak frequencies and corresponding activities of the Raman active modes are calculated. Our findings confirm the Raman spectrum of the unstrained 2D crystals and provide expected variations in the Raman… ▽ More By performing density functional theory-based ab-initio calculations, Raman active phonon modes of novel single-layer two-dimensional (2D) materials and the effect of in-plane biaxial strain on the peak frequencies and corresponding activities of the Raman active modes are calculated. Our findings confirm the Raman spectrum of the unstrained 2D crystals and provide expected variations in the Raman active modes of the crystals under in-plane biaxial strain. The results are summarized as follows; (i) frequencies of the phonon modes soften (harden) under applied tensile (compressive) strains, (ii) the response of the Raman activities to applied strain for the in-plane and out-of-plane vibrational modes have opposite trends, thus, the built-in strains in the materials can be monitored by tracking the relative activities of those modes, (iii) in particular, the A-peak in single-layer Si and Ge disappear under a critical tensile strain, (iv) especially in mono and di- atomic single-layers, the shift of the peak frequencies is stronger indication of the strain rather than the change in Raman activities, (v) Raman active modes of single-layer ReX 2 (X=S, Se) are almost irresponsive to the applied strain. Strain-induced modifications in the Raman spectrum of 2D materials in terms of the peak positions and the relative Raman activities of the modes could be a convenient tool for characterization. △ Less

Submitted 3 March, 2018; originally announced March 2018.

Electronic, Optical and Mechanical Properties of Silicene Derivatives

Authors: Mehmet Yagmurcukardes, Cihan Bacaksiz, Fadıl Iyikanat, Engin Torun, R. Tugrul Senger, Francois M. Peeters, Hasan Sahin

Abstract: Successful isolation of graphene from graphite opened a new era for material science and con- densed matter physics. Due to this remarkable achievement, there has been an immense interest to synthesize new two dimensional materials and to investigate their novel physical properties. Silicene, form of Si atoms arranged in a buckled honeycomb geometry, has been successfully synthesized and emerged a… ▽ More Successful isolation of graphene from graphite opened a new era for material science and con- densed matter physics. Due to this remarkable achievement, there has been an immense interest to synthesize new two dimensional materials and to investigate their novel physical properties. Silicene, form of Si atoms arranged in a buckled honeycomb geometry, has been successfully synthesized and emerged as a promising material for nanoscale device applications. However, the major obstacle for using silicene in electronic applications is the lack of a band gap similar to the case of graphene. Therefore, tuning the electronic properties of silicene by using chemical functionalization methods such as hydrogenation, halogenation or oxidation has been a focus of interest in silicene research. In this paper, we review the recent studies on the structural, electronic, optical and mechanical proper- ties of silicene-derivative structures. Since these derivatives have various band gap energies, they are promising candidates for the next generation of electronic and optoelectronic device applications. △ Less

Submitted 10 August, 2016; originally announced August 2016.

Mg(OH)2 -WS2 Heterobilayer: Electric Field Tunable Bandgap Crossover

Authors: M. Yagmurcukardes, E. Torun, R. T. Senger, F. M. Peeters, H. Sahin

Abstract: Magnesium hydroxide (Mg(OH)2) has a layered brucite-like structure in its bulk form and was recently isolated as a new member of 2D monolayer materials. We investigated the electronic and optical properties of monolayer crystals of Mg(OH)2 and WS2 and their possible heterobilayer structure by means of first principles calculations. It was found that both monolayers of Mg(OH)2 and WS 2 are direct-g… ▽ More Magnesium hydroxide (Mg(OH)2) has a layered brucite-like structure in its bulk form and was recently isolated as a new member of 2D monolayer materials. We investigated the electronic and optical properties of monolayer crystals of Mg(OH)2 and WS2 and their possible heterobilayer structure by means of first principles calculations. It was found that both monolayers of Mg(OH)2 and WS 2 are direct-gap semiconductors and these two monolayers form a typical van der Waals heterostructure with a weak interlayer interaction and a type-II band alignment with a staggered gap that spatially seperates electrons and holes. We also showed that an out-of-plane electric field induces a transition from a staggered to a straddling type heterojunction. Moreover, by solving the Bethe-Salpeter equation on top of single shot G0 W0 calculations, we show that the oscillator strength of the intralayer excitons of the heterostructure is an order of magnitude larger than the oscillator strength of the interlayer excitons. Because of the staggered interfacial gap and the field- tunable energy band structure, the Mg(OH)2 -WS2 heterobilayer can become an important candidate for various optoelectronic device applications in nanoscale. △ Less

Submitted 17 March, 2016; originally announced March 2016.

Journal ref: Phys. Rev. B 94, 195403 (2016)

Nitrogenated, Phosphorated and Arsenicated Monolayer Holey Graphenes

Authors: Mehmet Yagmurcukardes, Seyda Horzum, Engin Torun, François M. Peeters, R. Tugrul Senger

Abstract: Motivated by a recent experiment that reported the synthesis of a new 2D material nitrogenated holey graphene (C$_2$N) [Mahmood \textit{et al., Nat. Comm.}, 2015, \textbf{6}, 6486], electronic, magnetic, and mechanical properties of nitrogenated (C$_2$N), phosphorated (C$_2$P) and arsenicated (C$_2$As) monolayer holey graphene structures are investigated using first-principles calculations. Our to… ▽ More Motivated by a recent experiment that reported the synthesis of a new 2D material nitrogenated holey graphene (C$_2$N) [Mahmood \textit{et al., Nat. Comm.}, 2015, \textbf{6}, 6486], electronic, magnetic, and mechanical properties of nitrogenated (C$_2$N), phosphorated (C$_2$P) and arsenicated (C$_2$As) monolayer holey graphene structures are investigated using first-principles calculations. Our total energy calculations indicate that, similar to the C$_2$N monolayer, the formation of the other two holey structures are also energetically feasible. Calculated cohesive energies for each monolayer show a decreasing trend going from C$_2$N to C$_2$As structure. Remarkably, all the holey monolayers are direct band gap semiconductors. Regarding the mechanical properties (in-plane stiffness and Poisson ratio), we find that C$_2$N has the highest in-plane stiffness and the largest Poisson ratio among the three monolayers. In addition, our calculations reveal that for the C$_2$N, C$_2$P and C$_2$As monolayers, creation of N and P defects changes the semiconducting behavior to a metallic ground state while the inclusion of double H impurities in all holey structures results in magnetic ground states. As an alternative to the experimentally synthesized C$_2$N, C$_2$P and C$_2$As are mechanically stable and flexible semiconductors which are important for potential applications in optoelectronics. △ Less

Submitted 7 January, 2016; v1 submitted 2 January, 2016; originally announced January 2016.

Pentagonal Monolayer Crystals of Carbon, Boron Nitride, and Silver Azide

Authors: M. Yagmurcukardes, H. Sahin, J. Kang, E. Torun, F. M. Peeters, R. T. Senger

Abstract: In this study we present a theoretical investigation of structural, electronic and mechanical properties of pentagonal monolayers of carbon (p-graphene), boron nitride (p-B$_{2}$N$_{4}$ and p-B$_{4}$N$_{2}$) and silver azide (p-AgN$_{3}$) by performing state-of-the-art first principles calculations. Our total energy calculations suggest feasible formation of monolayer crystal structures composed e… ▽ More In this study we present a theoretical investigation of structural, electronic and mechanical properties of pentagonal monolayers of carbon (p-graphene), boron nitride (p-B$_{2}$N$_{4}$ and p-B$_{4}$N$_{2}$) and silver azide (p-AgN$_{3}$) by performing state-of-the-art first principles calculations. Our total energy calculations suggest feasible formation of monolayer crystal structures composed entirely of pentagons. In addition, electronic band dispersion calculations indicate that while p-graphene and p-AgN$_{3}$ are semiconductors with indirect bandgaps, p-BN structures display metallic behavior. We also investigate the mechanical properties (in-plane stiffness and the Poisson's ratio) of four different pentagonal structures under uniaxial strain. p-graphene is found to have the highest stiffness value and the corresponding Poisson's ratio is found to be negative. Similarly, p-B$_{2}$N$_{4}$ and p-B$_{4}$N$_{2}$ have negative Poisson's ratio values. On the other hand, the p-AgN$_{3}$ has a large and positive Poisson's ratio. In dynamical stability tests based on calculated phonon spectra of these pentagonal monolayers, we find that only p-graphene and p-B$_{2}$N$_{4}$ are stable, but p-AgN$_{3}$ and p-B$_{4}$N$_{2}$ are vulnerable against vibrational excitations. △ Less

Submitted 14 September, 2015; originally announced October 2015.

Comments: 7 pages, 5 figures, J. Appl. Phys. 118, 104303 (2015)