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Molecular dynamics simulations of heat transport using machine-learned potentials: A mini review and tutorial on GPUMD with neuroevolution potentials
Authors:
Haikuan Dong,
Yongbo Shi,
Penghua Ying,
Ke Xu,
Ting Liang,
Yanzhou Wang,
Zezhu Zeng,
Xin Wu,
Wenjiang Zhou,
Shiyun Xiong,
Shunda Chen,
Zheyong Fan
Abstract:
Molecular dynamics (MD) simulations play an important role in understanding and engineering heat transport properties of complex materials. An essential requirement for reliably predicting heat transport properties is the use of accurate and efficient interatomic potentials. Recently, machine-learned potentials (MLPs) have shown great promise in providing the required accuracy for a broad range of…
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Molecular dynamics (MD) simulations play an important role in understanding and engineering heat transport properties of complex materials. An essential requirement for reliably predicting heat transport properties is the use of accurate and efficient interatomic potentials. Recently, machine-learned potentials (MLPs) have shown great promise in providing the required accuracy for a broad range of materials. In this mini review and tutorial, we delve into the fundamentals of heat transport, explore pertinent MD simulation methods, and survey the applications of MLPs in MD simulations of heat transport. Furthermore, we provide a step-by-step tutorial on develo** MLPs for highly efficient and predictive heat transport simulations, utilizing the neuroevolution potentials (NEPs) as implemented in the GPUMD package. Our aim with this mini review and tutorial is to empower researchers with valuable insights into cutting-edge methodologies that can significantly enhance the accuracy and efficiency of MD simulations for heat transport studies.
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Submitted 24 April, 2024; v1 submitted 29 January, 2024;
originally announced January 2024.
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Correcting force error-induced underestimation of lattice thermal conductivity in machine learning molecular dynamics
Authors:
Xiguang Wu,
Wenjiang Zhou,
Haikuang Dong,
Penghua Ying,
Yanzhou Wang,
Bai Song,
Zheyong Fan,
Shiyun Xiong
Abstract:
Machine learned potentials (MLPs) have been widely employed in molecular dynamics (MD) simulations to study thermal transport. However, literature results indicate that MLPs generally underestimate the lattice thermal conductivity (LTC) of typical solids. Here, we quantitatively analyze this underestimation in the context of the neuroevolution potential (NEP), which is a representative MLP that ba…
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Machine learned potentials (MLPs) have been widely employed in molecular dynamics (MD) simulations to study thermal transport. However, literature results indicate that MLPs generally underestimate the lattice thermal conductivity (LTC) of typical solids. Here, we quantitatively analyze this underestimation in the context of the neuroevolution potential (NEP), which is a representative MLP that balances efficiency and accuracy. Taking crystalline silicon, GaAs, graphene, and PbTe as examples, we reveal that the fitting errors in the machine-learned forces against the reference ones are responsible for the underestimated LTC as they constitute external perturbations to the interatomic forces. Since the force errors of a NEP model and the random forces in the Langevin thermostat both follow a Gaussian distribution, we propose an approach to correcting the LTC by intentionally introducing different levels of force noises via the Langevin thermostat and then extrapolating to the limit of zero force error. Excellent agreement with experiments is obtained by using this correction for all the prototypical materials over a wide range of temperatures. Based on spectral analyses, we find that the LTC underestimation mainly arises from increased phonon scatterings in the low-frequency region caused by the random force errors.
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Submitted 26 May, 2024; v1 submitted 21 January, 2024;
originally announced January 2024.
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Magic angle in thermal conductivity of twisted bilayer graphene
Authors:
Yajuan Cheng,
Zheyong Fan,
Tao Zhang,
Masahiro Nomura,
Sebastian Volz,
Guimei Zhu,
Baowen Li,
Shiyun Xiong
Abstract:
We report a local minimum in thermal conductivity in twisted bilayer graphene (TBG) at the angle of 1.08$^\circ$, which corresponds to the 'magic angle' in the transition of several other reported properties. Within the supercell of a moiré lattice, different stacking modes generate phonon scattering sites which reduce the thermal conductivity of TBG. The thermal magic angle arises from the compet…
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We report a local minimum in thermal conductivity in twisted bilayer graphene (TBG) at the angle of 1.08$^\circ$, which corresponds to the 'magic angle' in the transition of several other reported properties. Within the supercell of a moiré lattice, different stacking modes generate phonon scattering sites which reduce the thermal conductivity of TBG. The thermal magic angle arises from the competition between the delocalization of atomic vibrational amplitudes and stresses on one hand, and the increased AA stacking density on the other hand. The former effect weakens the scattering strength of a single scatterer while the latter one increases the density of scatterers. The combination of these two effects eventually leads to the apparition of the highlighted irregularity in heat conduction. The manifestation of a magic angle, disclosing new thermal mechanisms at nanoscale, further uncovers the unique physics of two-dimensional materials.
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Submitted 13 February, 2023; v1 submitted 31 December, 2022;
originally announced January 2023.
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Thermal conductivity minimum of graded superlattices due to phonon localization
Authors:
Yangyu Guo,
Marc Bescond,
Zhongwei Zhang,
Shiyun Xiong,
Kazuhiko Hirakawa,
Masahiro Nomura,
Sebastian Volz
Abstract:
The Anderson localization of thermal phonons has been shown only in few nano-structures with strong random disorder by the exponential decay of transmission to zero and a thermal conductivity maximum when increasing system length. In this work, we present a path to demonstrate the phonon localization with distinctive features in graded superlattices with short-range order and long-range disorder.…
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The Anderson localization of thermal phonons has been shown only in few nano-structures with strong random disorder by the exponential decay of transmission to zero and a thermal conductivity maximum when increasing system length. In this work, we present a path to demonstrate the phonon localization with distinctive features in graded superlattices with short-range order and long-range disorder. A thermal conductivity minimum with system length appears due to the exponential decay of transmission to a non-zero constant, which is a feature of partial phonon localization caused by the moderate disorder. We provide clear evidence of localization through the combined analysis of the participation ratio, transmission, and real-space phonon number density distribution based on our quantum transport simulation. The present work would promote heat conduction engineering by localization via the wave nature of phonons.
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Submitted 4 May, 2021;
originally announced May 2021.
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Anharmonic phonon-phonon scattering at interface by non-equilibrium Green's function formalism
Authors:
Yangyu Guo,
Zhongwei Zhang,
Marc Bescond,
Shiyun Xiong,
Masahiro Nomura,
Sebastian Volz
Abstract:
The understanding and modeling of inelastic scattering of thermal phonons at a solid/solid interface remain an open question. We present a fully quantum theoretical scheme to quantify the effect of anharmonic phonon-phonon scattering at an interface via non-equilibrium Green's function (NEGF) formalism. Based on the real-space scattering rate matrix, a decomposition of the interfacial spectral ene…
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The understanding and modeling of inelastic scattering of thermal phonons at a solid/solid interface remain an open question. We present a fully quantum theoretical scheme to quantify the effect of anharmonic phonon-phonon scattering at an interface via non-equilibrium Green's function (NEGF) formalism. Based on the real-space scattering rate matrix, a decomposition of the interfacial spectral energy exchange is made into contributions from local and non-local anharmonic interactions, of which the former is shown to be predominant for high-frequency phonons whereas both are important for low-frequency phonons. The anharmonic decay of interfacial phonon modes is revealed to play a crucial role in bridging the bulk modes across the interface. The overall quantitative contribution of anharmonicity to thermal boundary conductance is found to be moderate. The present work promotes a deeper understanding of heat transport at the interface and an intuitive interpretation of anharmonic phonon NEGF formalism.
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Submitted 18 March, 2021;
originally announced March 2021.
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Interpretation of apparent thermal conductivity in finite systems from equilibrium molecular dynamics simulations
Authors:
Haikuan Dong,
Shiyun Xiong,
Zheyong Fan,
** Qian,
Yan**g Su,
Tapio Ala-Nissila
Abstract:
We propose a way to properly interpret the apparent thermal conductivity obtained for finite systems using equilibrium molecular dynamics simulations (EMD) with fixed or open boundary conditions in the transport direction. In such systems the heat current autocorrelation function develops negative values after a correlation time which is proportional to the length of the simulation cell in the tra…
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We propose a way to properly interpret the apparent thermal conductivity obtained for finite systems using equilibrium molecular dynamics simulations (EMD) with fixed or open boundary conditions in the transport direction. In such systems the heat current autocorrelation function develops negative values after a correlation time which is proportional to the length of the simulation cell in the transport direction. Accordingly, the running thermal conductivity develops a maximum value at the same correlation time and eventually decays to zero. By comparing EMD with nonequilibrium molecular dynamics (NEMD) simulations, we conclude that the maximum thermal conductivity from EMD in a system with domain length 2L is equal to the thermal conductivity from NEMD in a system with domain length L. This facilitates the use of nonperiodic-boundary EMD for thermal transport in finite samples in close correspondence to NEMD.
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Submitted 23 November, 2020; v1 submitted 20 November, 2020;
originally announced November 2020.
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Exciton interaction induced spin splitting in MoS$_2$ monolayer
Authors:
Yao Li,
G. Li,
Xiaokun Zhai,
Shi Fu Xiong,
Hongjun Liu,
Xiao Wang,
Haitao Chen,
Ying Gao,
Xiu Zhang,
Tong Liu,
Yuan Ren,
Xuekai Ma,
Hongbin Fu,
T. Gao
Abstract:
By pum** nonresonantly a MoS$_2$ monolayer at $13$ K under a circularly polarized cw laser, we observe exciton energy redshifts that break the degeneracy between B excitons with opposite spin. The energy splitting increases monotonically with the laser power reaching as much as $18$ meV, while it diminishes with the temperature. The phenomenon can be explained theoretically by considering simult…
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By pum** nonresonantly a MoS$_2$ monolayer at $13$ K under a circularly polarized cw laser, we observe exciton energy redshifts that break the degeneracy between B excitons with opposite spin. The energy splitting increases monotonically with the laser power reaching as much as $18$ meV, while it diminishes with the temperature. The phenomenon can be explained theoretically by considering simultaneously the bandgap renormalization which gives rise to the redshift and exciton-exciton Coulomb exchange interaction which is responsible for the spin-dependent splitting. Our results offer a simple scheme to control the valley degree of freedom in MoS$_2$ monolayer and provide an accessible method in investigating many-body exciton exciton interaction in such materials.
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Submitted 6 January, 2020;
originally announced January 2020.
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Influence of Boundaries and Thermostatting on Nonequilibrium Molecular Dynamics Simulations of Heat Conduction in Solids
Authors:
Zhen Li,
Shiyun Xiong,
Charles Sievers,
Yue Hu,
Zheyong Fan,
Ning Wei,
Hua Bao,
Shunda Chen,
Davide Donadio,
Tapio Ala-Nissila
Abstract:
Nonequilibrium molecular dynamics (NEMD) has been extensively used to study thermal transport at various length scales in many materials. In this method, two local thermostats at different temperatures are used to generate a nonequilibrium steady state with a constant heat flux. Conventionally, the thermal conductivity of a finite system is calculated as the ratio between the heat flux and the tem…
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Nonequilibrium molecular dynamics (NEMD) has been extensively used to study thermal transport at various length scales in many materials. In this method, two local thermostats at different temperatures are used to generate a nonequilibrium steady state with a constant heat flux. Conventionally, the thermal conductivity of a finite system is calculated as the ratio between the heat flux and the temperature gradient extracted from the linear part of the temperature profile away from the local thermostats. Here we show that, with a proper choice of the thermostat, the nonlinear part of the temperature profile should actually not be excluded in thermal transport calculations. We compare NEMD results against those from the atomistic Green's function method in the ballistic regime, and those from the homogeneous nonequilibrium molecular dynamics method in the ballistic-to-diffusive regime. These comparisons suggest that in all the transport regimes, one should directly calculate the thermal conductance from the temperature difference between the heat source and sink and, if needed, convert it to the thermal conductivity by multiplying it with the system length. Furthermore, we find that the Langevin thermostat outperforms the Nosé-Hoover (chain) thermostat in NEMD simulations because of its stochastic and local nature. We show that this is particularly important for studying asymmetric carbon-based nanostructures, for which the Nosé-Hoover thermostat can produce artifacts leading to unphysical thermal rectification. Our findings are important to obtain correct results from molecular dynamics simulations of nanoscale heat transport as the accuracy of the interatomic potentials is rapidly improving.
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Submitted 27 May, 2019;
originally announced May 2019.
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Native surface oxide turns alloyed silicon membranes into nanophononic metamaterials with ultra-low thermal conductivity
Authors:
Shiyun Xiong,
Daniele Selli,
Sanghamitra Neogi,
Davide Donadio
Abstract:
A detailed understanding of the relation between microscopic structure and phonon propagation at the nan oscale is essential to design materials with desired phononic and thermal properties.Here we uncover a new mechanism of phonon interaction in surface oxidized membranes, i.e., native oxide layers interact with phonons in ultra-thin silicon membranes through local resonances. The local resonance…
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A detailed understanding of the relation between microscopic structure and phonon propagation at the nan oscale is essential to design materials with desired phononic and thermal properties.Here we uncover a new mechanism of phonon interaction in surface oxidized membranes, i.e., native oxide layers interact with phonons in ultra-thin silicon membranes through local resonances. The local resonances reduce the low frequency phonon group velocities and shorten their mean free path. This effect opens up a new strategy for ultralow thermal conductivity design as it complements the scattering mechanism which scatters higher frequency modes effectively. The combination of native oxide layer and alloying with germanium in concentration as small as 5% reduces the thermal conductivity of silicon membranes to 100 time lower than the bulk. In addition, the resonance mechanism produced by native oxide surface layers is particularly effective for thermal condutivity reduction even at very low temperatures, at which only low frequency modes are populated.
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Submitted 8 May, 2017;
originally announced May 2017.
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MoS2 Heterostructure with Tunable Phase Stability: Strain Induced Interlayer Covalent Bond Formation
Authors:
Bin Ouyang,
Shiyun Xiong,
Zhi Yang,
Yuhang **g,
Yongjie Wang
Abstract:
Due to the distinguished properties offered by different structural phases of monolayer MoS2, phase engineering design are urgently required for achieving switchable structural phase. Strain engineering is widely accepted as a clean and flexible method, however, cannot be achieved in engineering monolayer MoS2 phase transition because the critical biaxial strain required (~15%) is much larger than…
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Due to the distinguished properties offered by different structural phases of monolayer MoS2, phase engineering design are urgently required for achieving switchable structural phase. Strain engineering is widely accepted as a clean and flexible method, however, cannot be achieved in engineering monolayer MoS2 phase transition because the critical biaxial strain required (~15%) is much larger than measured elastic limit (~11%). In this study, employing density functional theoretical calculations, it has been found out that with the forming of heterostructure between MoS2 with buckled 2D materials such as silicence, germanene and stanene, only a small strain can trigger the phase transition. As being suggested by the constructed phase stability diagram, biaxial deformation as low as 3% in MoS2/silicene and MoS2/stanene sandwich structure, would be sufficient to induce the structural phase transition in MoS2 lattice. This strain falls well within experimental elastic limit, thus would be feasible to realize in experiment. The origin of such behavior can be understood as strain induced interlayer covalent bond formation, which finally make MoS2 lattice more sensitive to external strain. This theoretical work provides one realistic route for achieving flexible phase stabilities in experimental design.
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Submitted 12 March, 2017;
originally announced March 2017.
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Mechanical Tuning of Thermal Transport in a Molecular Junction
Authors:
Qian Li,
Ivan Duchemin,
Shiyun Xiong,
Gemma C. Solomon,
Davide Donadio
Abstract:
Understanding and controlling heat transport in molecular junctions would provide new routes to design nanoscale coupled electronic and phononic devices. Using first principles full quantum calculations, we tune thermal conductance of a molecular junction by mechanically compressing and extending a short alkane chain connected to graphene leads. We find that the thermal conductance of the compress…
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Understanding and controlling heat transport in molecular junctions would provide new routes to design nanoscale coupled electronic and phononic devices. Using first principles full quantum calculations, we tune thermal conductance of a molecular junction by mechanically compressing and extending a short alkane chain connected to graphene leads. We find that the thermal conductance of the compressed junction drops by half in comparison to the extended junction, making it possible to turn on and off the heat current. The low conductance of the off state does not vary by further approaching the leads and stems from the suppression of the transmission of the in--plane transverse and longitudinal channels. Furthermore, we show that misalignment of the leads does not reduce the conductance ratio. These results also contribute to the general understanding of thermal transport in molecular junctions.
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Submitted 18 November, 2015;
originally announced November 2015.
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Converting normal insulators into topological insulators via tuning orbital levels
Authors:
Wu-Jun Shi,
Junwei Liu,
Yong Xu,
Shi-Jie Xiong,
Jian Wu,
Wenhui Duan
Abstract:
Tuning the spin-orbit coupling strength via foreign element do** and/or modifying bonding strength via strain engineering are the major routes to convert normal insulators to topological insulators. We here propose an alternative strategy to realize topological phase transition by tuning the orbital level. Following this strategy, our first-principles calculations demonstrate that a topological…
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Tuning the spin-orbit coupling strength via foreign element do** and/or modifying bonding strength via strain engineering are the major routes to convert normal insulators to topological insulators. We here propose an alternative strategy to realize topological phase transition by tuning the orbital level. Following this strategy, our first-principles calculations demonstrate that a topological phase transition in some cubic perovskite-type compounds CsGeBr$_3$ and CsSnBr$_3$ could be facilitated by carbon substitutional do**. Such unique topological phase transition predominantly results from the lower orbital energy of the carbon dopant, which can pull down the conduction bands and even induce band inversion. Beyond conventional approaches, our finding of tuning the orbital level may greatly expand the range of topologically nontrivial materials.
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Submitted 3 November, 2015;
originally announced November 2015.
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Functionalization mediates heat transport in graphene nanoflakes
Authors:
Haoxue Han,
Yong Zhang,
Zainelabideen Y. Mijbil,
Hatef Sadeghi,
Yuxiang Ni,
Shiyun Xiong,
Kimmo Saaskilahti,
Steven Bailey,
Yuriy A. Kosevich,
Johan Liu,
Colin J. Lambert,
Sebastian Volz
Abstract:
Self-heating is a severe problem for high-power microelectronic devices. Graphene and few-layer graphene have attracted tremendous attention for heat removal thanks to their extraordinarily high in-plane thermal conductivity. However, this high thermal conductivity undergoes severe degradations caused by the contact with the substrate and the functionalization-induced point defects. Here we show t…
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Self-heating is a severe problem for high-power microelectronic devices. Graphene and few-layer graphene have attracted tremendous attention for heat removal thanks to their extraordinarily high in-plane thermal conductivity. However, this high thermal conductivity undergoes severe degradations caused by the contact with the substrate and the functionalization-induced point defects. Here we show that thermal management of a micro heater can be substantially improved via introduction of alternative heat-esca** channels implemented with graphene-based film covalently bonded to functionalized graphene oxide through silane molecules. Theoretical and experimental results demonstrate a counter-intuitive enhancement of the thermal conductivity of such a graphene-based film. This increase in the in-plane thermal conductivity of supported graphene is accompanied by an improvement on the graphene-substrates thermal contact. Using infrared thermal imaging, we demonstrate that the temperature of the hotspots can be lowered by 12 $^o$C in transistors operating at 130 W mm$^{-2}$ , which corresponds to half of an order-of-magnitude increase in the device lifetime. Ab initio and molecular dynamics simulations reveal that the functionalization constrains the cross-plane scattering of low frequency phonons, which in turn enhances in-plane heat conduction of the bonded graphene film by recovering the long flexural phonon lifetime.
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Submitted 7 August, 2015;
originally announced August 2015.
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Observation of Piezoelectricity in Monolayer Molybdenum Disulfide
Authors:
Hanyu Zhu,
Yuan Wang,
Jun Xiao,
Ming Liu,
Shaomin Xiong,
Zi **g Wong,
Ziliang Ye,
Xiaobo Yin,
Xiang Zhang
Abstract:
Piezoelectricity offers precise and robust conversion between electricity and mechanical force. Here we report the first experimental evidence of piezoelectricity in a single layer of molybdenum disulfide (MoS2) crystal as a result of inversion symmetry breaking of the atomic structure, with measured piezoelectric coefficient e11 = 2.9e-10 C/m. Through the angular dependence of electro-mechanical…
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Piezoelectricity offers precise and robust conversion between electricity and mechanical force. Here we report the first experimental evidence of piezoelectricity in a single layer of molybdenum disulfide (MoS2) crystal as a result of inversion symmetry breaking of the atomic structure, with measured piezoelectric coefficient e11 = 2.9e-10 C/m. Through the angular dependence of electro-mechanical coupling, we uniquely determined the two-dimensional (2D) crystal orientation. We observed that only MoS2 membranes with odd number of layers exhibited piezoelectricity, in sharp contrast to the conventional materials. The piezoelectricity discovered in single molecular membrane promises scaling down of nano-electro-mechanical systems (NEMS) to single atomic unit cell - the ultimate material limit.
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Submitted 29 August, 2014;
originally announced August 2014.
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Classical to quantum transition of near-field heat transfer between two nanoparticles
Authors:
Shiyun Xiong,
Kaike Yang,
Yuriy A. Kosevich,
Yann Chalopin,
Roberto D'Agosta,
Pietro Cortona,
Sebastian Volz
Abstract:
Heat transfer between two silica clusters is investigated by using the non-equilibrium Green's function method. In the gap range between 4 Å and three times the cluster size, the thermal conductance decreases as predicted by the surface charge-charge interaction. Above five times the cluster size, the volume dipole-dipole interaction predominates. Finally, when the distance becomes smaller than 4…
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Heat transfer between two silica clusters is investigated by using the non-equilibrium Green's function method. In the gap range between 4 Å and three times the cluster size, the thermal conductance decreases as predicted by the surface charge-charge interaction. Above five times the cluster size, the volume dipole-dipole interaction predominates. Finally, when the distance becomes smaller than 4 Å, a quantum interaction where the electrons of both clusters are shared takes place. This quantum interaction leads to the dramatic increase of the thermal coupling between neighbor clusters due to strong interactions. This study finally provides a description of the transition between radiation and heat conduction in gaps smaller than a few nanometers.
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Submitted 25 February, 2014; v1 submitted 8 August, 2013;
originally announced August 2013.
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Universal scheme to generate metal-insulator transition in disordered systems
Authors:
Ai-Min Guo,
Shi-Jie Xiong,
X. C. Xie,
Qing-feng Sun
Abstract:
We propose a scheme to generate metal-insulator transition in random binary layer (RBL) model, which is constructed by randomly assigning two types of layers. Based on a tight-binding Hamiltonian, the localization length is calculated for a variety of RBLs with different cross section geometries by using the transfer-matrix method. Both analytical and numerical results show that a band of extended…
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We propose a scheme to generate metal-insulator transition in random binary layer (RBL) model, which is constructed by randomly assigning two types of layers. Based on a tight-binding Hamiltonian, the localization length is calculated for a variety of RBLs with different cross section geometries by using the transfer-matrix method. Both analytical and numerical results show that a band of extended states could appear in the RBLs and the systems behave as metals by properly tuning the model parameters, due to the existence of a completely ordered subband, leading to a metal-insulator transition in parameter space. Furthermore, the extended states are irrespective of the diagonal and off-diagonal disorder strengths. Our results can be generalized to two- and three-dimensional disordered systems with arbitrary layer structures, and may be realized in Bose-Einstein condensates.
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Submitted 23 November, 2012;
originally announced November 2012.
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Stable Nanotubular Crystal of Silicon: A Predicted Allotrope With Direct Band Gap
Authors:
Chi-Pui Tang,
Jie Cao,
Shi-Jie Xiong
Abstract:
On basis of the first principle calculation we show that a crystalline structure of silicon, as a novel allotrope with nanotubular holes along two perpendicular directions, is stable. The calculations on geometrical and electronic properties reveal that this allotrope possesses a direct band gap wider by 0.5eV than the indirect one of silicon with diamond structure. The crystal belongs to I41/AMD…
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On basis of the first principle calculation we show that a crystalline structure of silicon, as a novel allotrope with nanotubular holes along two perpendicular directions, is stable. The calculations on geometrical and electronic properties reveal that this allotrope possesses a direct band gap wider by 0.5eV than the indirect one of silicon with diamond structure. The crystal belongs to I41/AMD space group, showing anisotropic optical properties and Young modulus. The bulk modulus is 64.4GPa and the density is 1.9g/cm$^{3}$, lower than that of the diamond silicon due to the presence of nanotubular holes. It is hopeful that the allotrope may widely expand applications of silicon in many fields due to its direct band gap and specific nanotubular structure.
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Submitted 14 June, 2011;
originally announced June 2011.
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Scaling of critical connectivity of mobile ad hoc communication networks
Authors:
Li Wang,
Chen-** Zhu,
Zhi-Ming Gu,
Shi-Jie Xiong,
Da-Ren He,
Bing-Hong Wang
Abstract:
In this paper, critical global connectivity of mobile ad hoc communication networks (MAHCN) is investigated. We model the two-dimensional plane on which nodes move randomly with a triangular lattice. Demanding the best communication of the network, we account the global connectivity $η$ as a function of occupancy $σ$ of sites in the lattice by mobile nodes. Critical phenomena of the connectivity…
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In this paper, critical global connectivity of mobile ad hoc communication networks (MAHCN) is investigated. We model the two-dimensional plane on which nodes move randomly with a triangular lattice. Demanding the best communication of the network, we account the global connectivity $η$ as a function of occupancy $σ$ of sites in the lattice by mobile nodes. Critical phenomena of the connectivity for different transmission ranges $r$ are revealed by numerical simulations, and these results fit well to the analysis based on the assumption of homogeneous mixing . Scaling behavior of the connectivity is found as $η\sim f(R^βσ)$, where $R=(r-r_{0})/r_{0}$, $r_{0}$ is the length unit of the triangular lattice and $β$ is the scaling index in the universal function $f(x)$. The model serves as a sort of site percolation on dynamic complex networks relative to geometric distance. Moreover, near each critical $σ_c(r)$ corresponding to certain transmission range $r$, there exists a cut-off degree $k_c$ below which the clustering coefficient of such self-organized networks keeps a constant while the averaged nearest neighbor degree exhibits a unique linear variation with the degree k, which may be useful to the designation of real MAHCN.
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Submitted 13 June, 2008;
originally announced June 2008.
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Vibration Induced Non-adiabatic Geometric Phase and Energy Uncertainty of Fermions in Graphene
Authors:
Shi-Jie Xiong,
Ye Xiong
Abstract:
We investigate geometric phase of fermion states under relative vibrations of two sublattices in graphene by solving time-dependent Schödinger equation using Floquet scheme. In a period of vibration the fermions acquire different geometric phases depending on their momenta. There are two regions in the momentum space: the adiabatic region where the geometric phase can be approximated by the Berr…
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We investigate geometric phase of fermion states under relative vibrations of two sublattices in graphene by solving time-dependent Schödinger equation using Floquet scheme. In a period of vibration the fermions acquire different geometric phases depending on their momenta. There are two regions in the momentum space: the adiabatic region where the geometric phase can be approximated by the Berry phase and the chaotic region where the geometric phase drastically fluctuates in changing parameters. The energy of fermions due to vibrations shows spikes in the chaotic region. The results suggest a possible dephasing mechanism which may cause classical-like transport properties in graphene.
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Submitted 28 December, 2007;
originally announced January 2008.
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Anderson localization of electron states in graphene in different types of disorder
Authors:
Shi-Jie Xiong,
Ye Xiong
Abstract:
Anderson localization of electron states on graphene lattice with diagonal and off-diagonal (OD) disorder in the absence of magnetic field is investigated by using the standard finite-size scaling analysis. In the presence of diagonal disorder all states are localized as predicted by the scaling theory for two-dimensional systems. In the case of OD disorder, the states at the Dirac point (E=0) a…
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Anderson localization of electron states on graphene lattice with diagonal and off-diagonal (OD) disorder in the absence of magnetic field is investigated by using the standard finite-size scaling analysis. In the presence of diagonal disorder all states are localized as predicted by the scaling theory for two-dimensional systems. In the case of OD disorder, the states at the Dirac point (E=0) are shown to be delocalized due to the specific chiral symmetry, although other states ($E \neq 0$) are still localized. In OD disorder the conductance at E=0 in an $M\times L$ rectangular system at the thermodynamical limit is calculated with the transfer-matrix technique for various values of ratio $M/L$ and different types of distribution functions of the OD elements $t_{nn'}$. It is found that if all the $t_{nn'}$'s are positive the conductance is independent of $L/M$ as restricted by 2 delocalized channels at E=0. If the distribution function includes the sign randomness of elements $t_{nn'}$, the conductivity, rather than the conductance, becomes $L/M$ independent. The calculated value of the conductivity is around $\frac{4e^2}{h}$, in consistence with the experiments.
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Submitted 28 December, 2007;
originally announced January 2008.
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Quantum Theory of Spontaneous Emission from Exciton-Electron-Phonon Complex in Solid: Quantum Interference and Many-Body Effect
Authors:
Shi-Jie Xiong,
S. J. Xu
Abstract:
A full quantum mechanical theory for the spontaneous emission from excitons simultaneously coupled to electronic excitations and anharmonic phonons in solid is developed. Origin of detailed structures, such as zero-phonon line splitting, Fano lineshape near one phonon sideband, strong second-order phonon Stokes line, asymmetric phonon anti-Stokes lines, and two-electron satellites as well as the…
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A full quantum mechanical theory for the spontaneous emission from excitons simultaneously coupled to electronic excitations and anharmonic phonons in solid is developed. Origin of detailed structures, such as zero-phonon line splitting, Fano lineshape near one phonon sideband, strong second-order phonon Stokes line, asymmetric phonon anti-Stokes lines, and two-electron satellites as well as their phonon replicas recently revealed in the low-temperature photoluminescence of ZnO, has been identified by quantitative calculations from the theory.
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Submitted 23 February, 2007; v1 submitted 23 February, 2007;
originally announced February 2007.
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Berry-Phase Induced Dynamical Instability and Minimum Conductivity in Graphene
Authors:
Shi-Jie Xiong,
Ye Xiong
Abstract:
Single-layer carbon, or graphene, demonstrates amazing transport properties, such as the minimum conductivity near $\frac{4e^2}{h}$ independent of shapes and mobility of samples. This indicates there exist some unusual effects due to specific Dirac dispersion relation of fermion in two dimensions. By deriving fermion-lattice interaction Hamiltonian we show that Berry phases can be produced in fe…
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Single-layer carbon, or graphene, demonstrates amazing transport properties, such as the minimum conductivity near $\frac{4e^2}{h}$ independent of shapes and mobility of samples. This indicates there exist some unusual effects due to specific Dirac dispersion relation of fermion in two dimensions. By deriving fermion-lattice interaction Hamiltonian we show that Berry phases can be produced in fermion states around two Dirac points by relative rotations of two sublattices. The Berry phases in turn remove the degeneracies of energies for states near the Fermi surface, leading to a dynamical instability of the lattice with respect to the rotations. By considering the Berry phases emerging in an uncertain way on fermion wavefunctions in vicinities of the Fermi surface, the conductivity is calculated by using the Landauer-Bütticker formula together with the transfer-matrix technique, verifying $\sim \frac{4e^2}{h}$ quantized minimum conductivity as observed in experiments independent of shapes and sizes. The relationship between the chaotic structure of fermions due to the Berry phases and the classical transport properties are discussed. The physical meaning is profound as this relationship provides an excellent example to elucidate the mechanism of quantum-classical transition.
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Submitted 2 February, 2007;
originally announced February 2007.
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Temperature dependent photon emission spectra of free excitons in phonon field of GaN
Authors:
S. J. Xu,
G. Q. Li,
S. -J. Xiong,
C. M. Che
Abstract:
Temperature-dependent radiative recombination of free excitons involving one or two LO phonons in GaN is investigated in detail. It is found that both phonon sidebands possess asymmetric lineshape and their energy spacings from the zero phonon line strongly deviate from the characteristic energy of LO phonons as the temperature increases. Furthermore, the deviation rates of one and two phonon si…
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Temperature-dependent radiative recombination of free excitons involving one or two LO phonons in GaN is investigated in detail. It is found that both phonon sidebands possess asymmetric lineshape and their energy spacings from the zero phonon line strongly deviate from the characteristic energy of LO phonons as the temperature increases. Furthermore, the deviation rates of one and two phonon sidebands are significantly different. Segall-Mahan theory, taking the exciton-photon and exciton-phonon interactions into account, is employed to calculate the sidebands of one or two LO phonons for free excitons in a wide temperature range. Excellent agreement between theory and experiment is achieved by using only one adjustable parameter (effective mass of free excitons). The obtained effective mass indicates that the free excitons in GaN are likely much lighter than estimated by available theoretical studies.
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Submitted 28 January, 2005;
originally announced January 2005.
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Excitonic Polaron States and Fano Interference in Phonon-Assisted Photoluminescence of Bound Excitons in ZnO
Authors:
Shi-Jie Xu,
Shi-Jie Xiong,
Shen-Lei Shi
Abstract:
We report a photoluminescence observation of robust excitonic polarons due to strong coupling of exciton and longitudinal optical (LO) phonon as well as Fano-type interference in high quality ZnO crystal. At low enough temperatures, the strong coupling of excitons and LO phonons leads to not only traditional Stokes lines (SLs) but also up to second-order anti-Stokes lines (ASLs) besides the zero…
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We report a photoluminescence observation of robust excitonic polarons due to strong coupling of exciton and longitudinal optical (LO) phonon as well as Fano-type interference in high quality ZnO crystal. At low enough temperatures, the strong coupling of excitons and LO phonons leads to not only traditional Stokes lines (SLs) but also up to second-order anti-Stokes lines (ASLs) besides the zero-phonon line (ZPL). The SLs and ASLs are found to be not mirror symmetric with respect to the ZPL, strongly suggesting that they are from different coupling states of exciton and phonons. It is more interesting that a new group of peaks, including a ZPL and several SLs, are observed. The observations can be explained with a newly developed theory in which this group is attributed to the ground excitonic polaron state and the other group is from the excited polaron states with LO phonon components partially decaying into environal phonon modes. Besides these spectral features showing the quasiparticle properties of exciton-phonon coupling system, the first-order SL is found to exhibit characteristic Fano lineshape, caused by quantum interference between the LO components of excitonic polarons and the environal phonons. These findings lead to a new insight into fundamental effects of exciton-phonon interaction.
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Submitted 28 January, 2005;
originally announced January 2005.
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Experimental Observation of Kondo-Fano Resonant Tunneling in Silicon-Doped GaAs/AlAs Multiple Quantum Wells
Authors:
S. J. Xu,
S. -J. Xiong,
J. Liu,
H. Z. Zheng,
F. C. Zhang
Abstract:
We report experimental observation of Kondo-Fano resonant tunneling in Si-doped GaAs/AlAs multiple quantum wells. The spectrum of differential tunneling conductance at low bias shows a strong temperature dependent resonance, whose peak is split in the presence of a magnetic field, characteristic of a Kondo resonance. The data is well explained as a resonant tunneling of conduction electrons at t…
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We report experimental observation of Kondo-Fano resonant tunneling in Si-doped GaAs/AlAs multiple quantum wells. The spectrum of differential tunneling conductance at low bias shows a strong temperature dependent resonance, whose peak is split in the presence of a magnetic field, characteristic of a Kondo resonance. The data is well explained as a resonant tunneling of conduction electrons at the Fermi level through the doped silicon impurity states inside the wells by using an impurity Anderson model. The Coulomb blockade resonance of the impurity states induces a Fano dip above the Kondo resonance.
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Submitted 23 February, 2006; v1 submitted 28 January, 2005;
originally announced January 2005.
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Phonon Coherence and New Set of Sidebands in Phonon-Assisted Photoluminescence
Authors:
Shi-Jie Xiong,
Shi-Jie Xu
Abstract:
We investigate excitonic polaron states comprising a local exciton and phonons in the longitudinal optical (LO) mode by solving the Schrödinger equation. We derive an exact expression for the ground state (GS), which includes multi-phonon components with coefficients satisfying the Huang-Rhys factors. The recombination of GS and excited polaron states gives one set of sidebands in photoluminesce…
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We investigate excitonic polaron states comprising a local exciton and phonons in the longitudinal optical (LO) mode by solving the Schrödinger equation. We derive an exact expression for the ground state (GS), which includes multi-phonon components with coefficients satisfying the Huang-Rhys factors. The recombination of GS and excited polaron states gives one set of sidebands in photoluminescence (PL): the multi-phonon components in the GS produce the Stokes lines and the zero-phonon components in the excited states produce the anti-Stokes lines. By introducing the mixing of the LO mode and environal phonon modes, the exciton will also couple with the latter, and the resultant polaron states result in another set of phonon sidebands. This set has a zero-phonon line higher and wider than that of the first set due to the tremendous number of the environal modes. The energy spacing between the zero-phonon lines of the first and second sets is proved to be the binding energy of the GS state. The common exciton origin of these two sets can be further verified by a characteristic Fano lineshape induced by the coherence in the mixing of the LO and the environal modes.
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Submitted 3 March, 2005; v1 submitted 28 January, 2005;
originally announced January 2005.
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Anti-Resonance and the 0.7 Anomaly in Conductance through a Quantum Point Contact
Authors:
Ye Xiong,
X. C. Xie,
Shi-jie Xiong
Abstract:
We investigate the transmission of electrons through a quantum point contact by using a quasi-one-dimensional model with a local bound state below the band bottom. While the complete transmission in lower channels gives rise to plateaus of conductance at multiples of $2e^{2}/h$, the electrons in the lowest channel are scattered by the local bound state when it is singly occupied. This scattering…
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We investigate the transmission of electrons through a quantum point contact by using a quasi-one-dimensional model with a local bound state below the band bottom. While the complete transmission in lower channels gives rise to plateaus of conductance at multiples of $2e^{2}/h$, the electrons in the lowest channel are scattered by the local bound state when it is singly occupied. This scattering produces a wide zero-transmittance (anti-resonance) for a singlet formed by tunneling and local electrons, and has no effect on triplets, leading to an exact $0.75(2e^{2}/h)$ shoulder prior to the first $2e^{2}/h$ plateau. Formation of a Kondo singlet from electrons in the Fermi sea screens the local moment and reduces the effects of anti-resonance, complementing the shoulder from 0.75 to 1 at low temperatures.
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Submitted 3 March, 2004;
originally announced March 2004.
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Scaling in directed dynamical small-world networks with random responses
Authors:
Chen-** Zhu,
Shi-Jie Xiong,
Ying-Jie Tian,
Lan Li,
Ke-Sheng Jiang
Abstract:
A dynamical model of small-world network, with directed links which describe various correlations in social and natural phenomena, is presented. Random responses of every site to the imput message are introduced to simulate real systems. The interplay of these ingredients results in collective dynamical evolution of a spin-like variable S(t) of the whole network. In the present model, global ave…
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A dynamical model of small-world network, with directed links which describe various correlations in social and natural phenomena, is presented. Random responses of every site to the imput message are introduced to simulate real systems. The interplay of these ingredients results in collective dynamical evolution of a spin-like variable S(t) of the whole network. In the present model, global average spreading length \langel L >_s and average spreading time <T >_s are found to scale as p^-αln N with different exponents. Meanwhile, S behaves in a duple scaling form for N>>N^*: S ~ f(p^-βq^γt'_sc), where p and q are rewiring and external parameters, α, β, γand f(t'_sc) are scaling exponents and universal functions, respectively. Possible applications of the model are discussed.
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Submitted 7 December, 2003;
originally announced December 2003.
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Electron-electron interactions, quantum Coulomb gap, and dynamical scaling near integer quantum Hall transitions
Authors:
Ziqiang Wang,
Shanhui Xiong
Abstract:
The effects of electron-electron interactions on the bulk tunneling density of states (TDOS) are studied near the integer quantum Hall transitions (IQHT). Taking into account the dynamical screening of the interactions in the critical conducting state, we show that the behavior of the TDOS is significantly altered from its noninteracting counterpart. For Coulomb interaction, we demonstrate that…
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The effects of electron-electron interactions on the bulk tunneling density of states (TDOS) are studied near the integer quantum Hall transitions (IQHT). Taking into account the dynamical screening of the interactions in the critical conducting state, we show that the behavior of the TDOS is significantly altered from its noninteracting counterpart. For Coulomb interaction, we demonstrate that the TDOS vanishes linearly at the Fermi level according to a quantum Coulomb gap form with a nonuniversal slope. For short-range interactions, the TDOS is found to follow a power-law with an exponent proportional to the interaction strength. Since short-range interactions are known to be irrelevant perturbations at the non-interacting critical point, we predict that upon scaling, the power-law is smeared, leading to a finite zero bias TDOS. However, the approach to the zero-bias value is described by a power-law with a universal exponent determined by the scaling dimension of short-range interactions. We also consider the case of quasi-1D samples with edges and find that the TDOS becomes dependent of the Hall conductance due to an altered boundary condition for diffusion. For short-range interactions, the TDOS of a quasi-1D strip is linear near the Fermi level with a slope inversely proportional to the resistivity in the perturbative limit. These results are in qualitative agreement with the bulk tunneling experiments. We discuss recent developments in understanding the role played by electron-electron interactions at the IQHT and the implications of these results on dynamical scaling of the transition width. We argue that for the long-range Coulomb interaction, the existence of the quantum Coulomb gap in the quantum critical regime of the transition gives rise to the observed dynamical exponent z=1.
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Submitted 5 March, 2002; v1 submitted 15 October, 2001;
originally announced October 2001.
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Power-law Localization in 2D, 3D with Off-diagonal Disorder
Authors:
Shi-Jie Xiong,
S. N. Evangelou
Abstract:
We describe non-conventional localization of the midband E=0 state in square and cubic finite bipartite lattices with off-diagonal disorder by solving numerically the linear equations for the corresponding amplitudes. This state is shown to display multifractal fluctuations, having many sparse peaks, and by scaling the participation ratio we obtain its disorder-dependent fractal dimension…
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We describe non-conventional localization of the midband E=0 state in square and cubic finite bipartite lattices with off-diagonal disorder by solving numerically the linear equations for the corresponding amplitudes. This state is shown to display multifractal fluctuations, having many sparse peaks, and by scaling the participation ratio we obtain its disorder-dependent fractal dimension $D_{2}$. A logarithmic average correlation function grows as $g(r) \sim η\ln r$ at distance $r$ from the maximum amplitude and is consistent with a typical overall power-law decay $|ψ(r)| \sim r^{-η}$ where $η$ is proportional to the strength of off-diagonal disorder.
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Submitted 10 January, 2001;
originally announced January 2001.
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Localization-Delocalization Transition of Electron States in a Disordered Quantum Small World Network
Authors:
Chen-** Zhu,
Shi-Jie Xiong
Abstract:
We investigate the localization behavior of electrons in a random lattice which is constructed from a quasi-one-dimensional chain with large coordinate number $Z$ and rewired bonds, resembling the small-world network proposed recently but with site-energy disorder and quantum links instead of classical ones. The random rewiring of bonds in the chain with large $Z$ enhances both the topological d…
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We investigate the localization behavior of electrons in a random lattice which is constructed from a quasi-one-dimensional chain with large coordinate number $Z$ and rewired bonds, resembling the small-world network proposed recently but with site-energy disorder and quantum links instead of classical ones. The random rewiring of bonds in the chain with large $Z$ enhances both the topological disorder and the effective dimensionality. From the competition between disorder and dimensionality enhancement a transition from localization to delocalization is found by using the level statistics method combined with the finite-size scaling analysis. The critical value of the rewiring rate for this transition is determined numerically. We obtain a universal critical integrated distribution of level spacing $s$ in the form $I_{p_{c}}(s)\propto \exp (-A_{c}s^α)$, with $A_{c}\simeq 1.50$ and $α\simeq 1.0$. This reveals the possible existence of metal-insulator transition in materials with chains as the backbones.
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Submitted 11 July, 2000;
originally announced July 2000.
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Localization Transition in Multilayered Disordered Systems
Authors:
S. N. Evangelou,
Shi-Jie Xiong,
P. Markov,
D. E. Katsanos
Abstract:
The Anderson delocalization-localization transition is studied in multilayered systems with randomly placed interlayer bonds of density $p$ and strength $t$. In the absence of diagonal disorder (W=0), following an appropriate perturbation expansion, we estimate the mean free paths in the main directions and verify by scaling of the conductance that the states remain extended for any finite $p$,…
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The Anderson delocalization-localization transition is studied in multilayered systems with randomly placed interlayer bonds of density $p$ and strength $t$. In the absence of diagonal disorder (W=0), following an appropriate perturbation expansion, we estimate the mean free paths in the main directions and verify by scaling of the conductance that the states remain extended for any finite $p$, despite the interlayer disorder. In the presence of additional diagonal disorder ($W > 0$) we obtain an Anderson transition with critical disorder $W_c$ and localization length exponent $ν$ independently of the direction. The critical conductance distribution $P_{c}(g)$ varies, however, for the parallel and the perpendicular directions. The results are discussed in connection to disordered anisotropic materials.
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Submitted 15 January, 2001; v1 submitted 24 May, 2000;
originally announced May 2000.
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Transport properties of the hierarchical model for stretched polymers
Authors:
Chen-** Zhu,
Shi-Jie Xiong,
Tao Chen
Abstract:
We prove that the hierarchical fractal model recently proposed for describing the stretched polymers [A. N. Samukhin et al, Phys. Rev. Lett.{\bf 78}, 326(1997)] is equivalent to a one-dimensional chain with hierarchical aperiodic structure. By use of the transfer matrix technique we calculate the electronic transmission and the dc conductance. We find that there exist sharp-edged transmission su…
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We prove that the hierarchical fractal model recently proposed for describing the stretched polymers [A. N. Samukhin et al, Phys. Rev. Lett.{\bf 78}, 326(1997)] is equivalent to a one-dimensional chain with hierarchical aperiodic structure. By use of the transfer matrix technique we calculate the electronic transmission and the dc conductance. We find that there exist sharp-edged transmission subbands and gaps, but the transmission subbands are rich in substructures which show self-similarity. The temperature dependence of conductance $g (T)$ is sensitive to the variation of the Fermi level and to the structure parameters $m$ and $n$ of the original fractal structure. The relationship of the obtained results to the experimental data and other theoretical works is discussed.
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Submitted 9 April, 1999; v1 submitted 9 April, 1999;
originally announced April 1999.
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First Order Metal-Insulator Transition in Two-dimensional Disordered Systems
Authors:
Shie-Jie Xiong,
G. N. Katomeris,
S. N. Evangelou
Abstract:
In the absence of magnetic field or spin-orbit coupling the one-parameter scaling theory predicts localization of all states in two-dimensional (2D) disordered systems, for any amount of disorder. However, a 2D metallic phase has been recently reported in high mobility Si-MOS and GaAs-based materials without magnetic field. We study numerically a recently proposed 2D model which consists of a co…
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In the absence of magnetic field or spin-orbit coupling the one-parameter scaling theory predicts localization of all states in two-dimensional (2D) disordered systems, for any amount of disorder. However, a 2D metallic phase has been recently reported in high mobility Si-MOS and GaAs-based materials without magnetic field. We study numerically a recently proposed 2D model which consists of a compactly coupled pure-random plane structure. This allows to obtain exactly a continuum of one-dimensional ballistic extended states which can lead to a marginal metallic phase of finite conductivity $σ_{0}=2e^2/h$, in a wide energy range whose boundaries define the mobility edges of a first-order metal-insulator transition. We present numerical diagonalization results and the conductivity of the system in perpendicular magnetic field, which verify the above analytical predictions. The model is also discussed in connection to recent experiments.
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Submitted 11 December, 1998;
originally announced December 1998.
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Bulk Tunneling at Integer Quantum Hall Transitions
Authors:
Ziqiang Wang,
Shanhui Xiong
Abstract:
The tunneling into the {\em bulk} of a 2D electron system (2DES) in strong magnetic field is studied near the integer quantum Hall transitions. We present a nonperturbative calculation of the tunneling density of states (TDOS) for both Coulomb and short-ranged electron-electron interactions. In the case of Coulomb interaction, the TDOS exhibits a 2D quantum Coulomb gap behavior,…
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The tunneling into the {\em bulk} of a 2D electron system (2DES) in strong magnetic field is studied near the integer quantum Hall transitions. We present a nonperturbative calculation of the tunneling density of states (TDOS) for both Coulomb and short-ranged electron-electron interactions. In the case of Coulomb interaction, the TDOS exhibits a 2D quantum Coulomb gap behavior, $ν(\ve)=C_Q\ave/e^4$, with $C_Q$ a nonuniversal coefficient of quantum mechanical origin. For short-ranged interactions, we find that the TDOS at low bias follows $ν(\ve)/ν(0)=1+(\ave/\ve_0)^γ$, where $γ$ is a universal exponent determined by the scaling dimension of short-ranged interactions.
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Submitted 8 July, 1999; v1 submitted 11 December, 1998;
originally announced December 1998.
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One-Dimensional Extended States in Partially Disordered Planar Systems
Authors:
Shi-Jie Xiong,
S. N. Evangelou,
E. N. Economou
Abstract:
We obtain analytically a continuum of one-dimensional ballistic extended states in a two-dimensional disordered system, which consists of compactly coupled random and pure square lattices. The extended states give a marginal metallic phase with finite conductivity $σ_{0}=2e^2/h$ in a wide energy range, whose boundaries define the mobility edges of a first-order metal-insulator transition. We sho…
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We obtain analytically a continuum of one-dimensional ballistic extended states in a two-dimensional disordered system, which consists of compactly coupled random and pure square lattices. The extended states give a marginal metallic phase with finite conductivity $σ_{0}=2e^2/h$ in a wide energy range, whose boundaries define the mobility edges of a first-order metal-insulator transition. We show current-voltage duality, $H_{\parallel}/T$ scaling of the conductivity in parallel magnetic field $H_{\parallel}$ and non-Fermi liquid properties when long-range electron-electron interactions are included.
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Submitted 17 June, 1998;
originally announced June 1998.
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Edge state transmission, duality relation and its implication to measurements
Authors:
Shanhui Xiong
Abstract:
The duality in the Chalker-Coddington network model is examined. We are able to write down a duality relation for the edge state transmission coefficient, but only for a specific symmetric Hall geometry. Looking for broader implication of the duality, we calculate the transmission coefficient $T$ in terms of the conductivity $σ_{xx}$ and $σ_{xy}$ in the diffusive limit. The edge state scattering…
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The duality in the Chalker-Coddington network model is examined. We are able to write down a duality relation for the edge state transmission coefficient, but only for a specific symmetric Hall geometry. Looking for broader implication of the duality, we calculate the transmission coefficient $T$ in terms of the conductivity $σ_{xx}$ and $σ_{xy}$ in the diffusive limit. The edge state scattering problem is reduced to solving the diffusion equation with two boundary conditions $(\partial_y-(σ_{xy})/(σ_{xx})\partial_x)φ=0$ and $[\partial_x+(σ_{xy}-σ_{xy}^{lead})/(σ_{xx}) \partial_y]φ=0$. We find that the resistances in the geometry considered are not necessarily measures of the resistivity and $ρ_{xx}=L/W R/T h/e^2$ ($R=1-T$) holds only when $ρ_{xy}$ is quantized. We conclude that duality alone is not sufficient to explain the experimental findings of Shahar et al and that Landauer-Buttiker argument does not render the additional condition, contrary to previous expectation.
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Submitted 12 March, 1998;
originally announced March 1998.
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Anisotropic Quantum Transport in Layered High--$T_c$ Cuprates
Authors:
S. N. Evangelou,
Shi-Jie Xiong,
Ding-Yu Xing,
E. N. Economou
Abstract:
A random lattice model with dilute interlayer bonds of density $p$ is proposed to describe the underdoped high--$T_c$ cuprates. We show analytically via an appropriate perturbation expansion and verify independently by numerical scaling of the conductance that for any finite $p$ the states remain extended in all directions, despite the presence of interlayer disorder. However, the obtained elect…
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A random lattice model with dilute interlayer bonds of density $p$ is proposed to describe the underdoped high--$T_c$ cuprates. We show analytically via an appropriate perturbation expansion and verify independently by numerical scaling of the conductance that for any finite $p$ the states remain extended in all directions, despite the presence of interlayer disorder. However, the obtained electronic transport is highly anisotropic with violent conductance fluctuations occuring in the layering direction, which can be responsible for the experimentally observed metallic "in-plane" and semiconducting "out-of-plane" resistivity of the cuprates.
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Submitted 22 August, 1997;
originally announced August 1997.
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Sparse random matrix configurations for two or three interacting electrons in a random potential
Authors:
Shi-Jie Xiong,
S. N. Evangelou
Abstract:
We investigate the random matrix configurations for two or three interacting electrons in one-dimensional disordered systems. In a suitable non-interacting localized electron basis we obtain a sparse random matrix with very long tails which is different from a superimposed random band matrix usually thought to be valid. The number of non-zero off-diagonal matrix elements is shown to decay very w…
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We investigate the random matrix configurations for two or three interacting electrons in one-dimensional disordered systems. In a suitable non-interacting localized electron basis we obtain a sparse random matrix with very long tails which is different from a superimposed random band matrix usually thought to be valid. The number of non-zero off-diagonal matrix elements is shown to decay very weakly from the matrix diagonal and the non-zero matrix elements are distributed according to a Lorentzian around zero with also very weakly decaying parameters. The corresponding random matrix for three interacting electrons is similar but even more sparse.
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Submitted 20 March, 1997;
originally announced March 1997.
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Magnetoquantum Oscillations in Mesoscopic Multi-Channel Rings
Authors:
Yan Chen,
Shi-Jie Xiong,
S. N. Evangelou
Abstract:
We obtain exact analytical expressions for the electronic transport through a multi-channel system, also with an applied magnetic field. The geometrical structure of the electrodes is found to cause a splitting of the conduction band into many subbands, depending on the number and the length of the chains and the conductance approaches zero when the chain number is sufficiently large, due to qua…
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We obtain exact analytical expressions for the electronic transport through a multi-channel system, also with an applied magnetic field. The geometrical structure of the electrodes is found to cause a splitting of the conduction band into many subbands, depending on the number and the length of the chains and the conductance approaches zero when the chain number is sufficiently large, due to quantum interference. In the presence of a magnetic field a very complicated oscillatory behavior of the conductance is found with a very sensitive dependence on the number of chains and their lengths, in a remarkable distinction from the usual oscillations in two-channel Aharonov-Bohm (AB) rings. In the multi-channel system the obtained oscillation patterns and their periodicities depend on the partitioning of the magnetic flux in the areas enclosed by the electronic paths. The present study may provide a useful information for quantum dots with a special configuration.
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Submitted 27 February, 1997;
originally announced February 1997.
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Mesoscopic conductance and its fluctuations at non-zero Hall angle
Authors:
Shanhui Xiong,
N. Read,
A. Douglas Stone
Abstract:
We consider the bilocal conductivity tensor, the two-probe conductance and its fluctuations for a disordered phase-coherent two-dimensional system of non-interacting electrons in the presence of a magnetic field, including correctly the edge effects. Analytical results are obtained by perturbation theory in the limit $σ_{xx} \gg 1$. For mesoscopic systems the conduction process is dominated by d…
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We consider the bilocal conductivity tensor, the two-probe conductance and its fluctuations for a disordered phase-coherent two-dimensional system of non-interacting electrons in the presence of a magnetic field, including correctly the edge effects. Analytical results are obtained by perturbation theory in the limit $σ_{xx} \gg 1$. For mesoscopic systems the conduction process is dominated by diffusion but we show that, due to the lack of time-reversal symmetry, the boundary condition for diffusion is altered at the reflecting edges. Instead of the usual condition, that the derivative along the direction normal to the wall of the diffusing variable vanishes, the derivative at the Hall angle to the normal vanishes. We demonstrate the origin of this boundary condition from different starting points, using (i) a simplified Chalker-Coddington network model, (ii) the standard diagrammatic perturbation expansion, and (iii) the nonlinear sigma-model with the topological term, thus establishing connections between the different approaches. Further boundary effects are found in quantum interference phenomena. We evaluate the mean bilocal conductivity tensor $σ_{μν}(r,r')$, and the mean and variance of the conductance, to leading order in $1/σ_{xx}$ and to order $(σ_{xy}/σ_{xx})^2$, and find that the variance of the conductance increases with the Hall ratio. Thus the conductance fluctuations are no longer simply described by the unitary universality class of the $σ_{xy}=0$ case, but instead there is a one-parameter family of probability distributions. In the quasi-one-dimensional limit, the usual universal result for the conductance fluctuations of the unitary ensemble is recovered, in contrast to results of previous authors. Also, a long discussion of current conservation.
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Submitted 10 January, 1997;
originally announced January 1997.