Showing 1–25 of 25 results for author: Xiong, F

Distinct quasiparticle interference patterns for surface impurity scattering on various Weyl semimetals

Authors: Feng Xiong, Chaocheng He, Yong Liu, Annica M. Black-Schaffer, Tanay Nag

Abstract: We examine the response of the Fermi arc in the context of quasi-particle interference (QPI) with regard to a localized surface impurity on various three-dimensional Weyl semimetals (WSMs). Our study also reveals the variation of the local density of states (LDOS), obtained by Fourier transforming the QPI profile, on the two-dimensional surface. We use the $T$-matrix formalism to numerically (anal… ▽ More We examine the response of the Fermi arc in the context of quasi-particle interference (QPI) with regard to a localized surface impurity on various three-dimensional Weyl semimetals (WSMs). Our study also reveals the variation of the local density of states (LDOS), obtained by Fourier transforming the QPI profile, on the two-dimensional surface. We use the $T$-matrix formalism to numerically (analytically and numerically) capture the details of the momentum space scattering in QPI (real space decay in LDOS), considering relevant tight-binding lattice and/or low-energy continuum models modeling a range of different WSMs. In particular, we consider multi-WSM (mWSM), hosting multiple Fermi arcs between two opposite chirality Weyl nodes (WNs), where we find a universal $1/r$-decay ($r$ measuring the radial distance from the impurity core) of the impurity-induced LDOS, irrespective of the topological charge. Interestingly, the inter-Fermi arc scattering is only present for triple WSMs, where we find an additional $1/r^3$-decay as compared to double and single WSMs. The untilted single (double) [triple] WSM shows a straight-line (leaf-like) [oval-shaped] QPI profile. The above QPI profiles are canted for hybrid WSMs where type-I and type-II Weyl nodes coexist, however, hybrid single WSM demonstrates strong non-uniformity, unlike the hybrid double and triple WSMs. We also show that the chirality and the positions of the Weyl nodes imprint marked signatures in the QPI profile. This allows us to distinguish between different WSMs, including the time-reversal-broken WSMs from the time-reversal-invariant WSM, even though both of the WSMs can host two pairs of Weyl nodes. Our study can thus shed light on experimentally obtainable complex QPI profiles and help differentiate different WSMs and their surface band structures. △ Less

Submitted 28 March, 2024; v1 submitted 2 May, 2023; originally announced May 2023.

Comments: 19 pages, 6 figures

Journal ref: Phys. Rev. B 109, 054201 (2024)

Instability and Momentum Bifurcation of molecular BEC in Exotic Dispersion with Shaken Lattice

Authors: Kaiyue Wang, Feng Xiong, Yun Long, Yun Ma, Colin V. Parker

Abstract: We place a molecular Bose-Einstein condensate in a 1D shaken lattice with a Floquet-engineered dispersion, and observe the dynamics in both position and momentum space. At the initial condition of zero momentum, our engineered dispersion is inverted, and therefore unstable. We observe that the condensate is destabilized by the lattice shaking as expected, but rather than decaying incoherently or p… ▽ More We place a molecular Bose-Einstein condensate in a 1D shaken lattice with a Floquet-engineered dispersion, and observe the dynamics in both position and momentum space. At the initial condition of zero momentum, our engineered dispersion is inverted, and therefore unstable. We observe that the condensate is destabilized by the lattice shaking as expected, but rather than decaying incoherently or producing jets, as in other unstable condensates, under our conditions the condensate bifurcates into two portions in momentum space, with each portion subsequently following semi-classical trajectories that suffer minimal spreading in momentum space as they evolve. We can model the evolution with a Gross-Pitaevskii equation, which suggests the initial bifurcation is facilitate by a nearly linear "inverted V"-shaped dispersion at the zone center, while the lack of spreading in momentum space is facilitated by interactions, as in a soliton. We propose that this relatively clean bifurcation in momentum space has applications for counter-diabatic preparation of exotic ground states in many-body quantum simulation schemes. △ Less

Submitted 24 August, 2023; v1 submitted 14 April, 2023; originally announced April 2023.

Understanding the three-dimensional quantum Hall effect in generic multi-Weyl semimetals

Authors: Feng Xiong, Carsten Honerkamp, Dante M. Kennes, Tanay Nag

Abstract: The quantum Hall effect in three-dimensional Weyl semimetal (WSM) receives significant attention for the emergence of the Fermi loop where the underlying two-dimensional Hall conductivity, namely, sheet Hall conductivity, shows quantized plateaus. Considering the tilted lattice models for multi Weyl semimetals (mWSMs), we systematically study the Landau levels (LLs) and magneto-Hall conductivity i… ▽ More The quantum Hall effect in three-dimensional Weyl semimetal (WSM) receives significant attention for the emergence of the Fermi loop where the underlying two-dimensional Hall conductivity, namely, sheet Hall conductivity, shows quantized plateaus. Considering the tilted lattice models for multi Weyl semimetals (mWSMs), we systematically study the Landau levels (LLs) and magneto-Hall conductivity in the presence of parallel and perpendicular (with respect to the Weyl node's separation) magnetic field, i.e., $\mathbf{ B}\parallel z$ and $\mathbf{B}\parallel x$, to explore the impact of tilting and non-linearity in the dispersion. We make use of two (single) node low-energy models to qualitatively explain the emergence of mid-gap chiral (linear crossing of chiral) LLs on the lattice for $\mathbf{ B}\parallel z$ ($\mathbf{ B}\parallel x$). Remarkably, we find that the sheet Hall conductivity becomes quantized for $\mathbf{ B}\parallel z$ even when two Weyl nodes project onto a single Fermi point in two opposite surfaces, forming a Fermi loop with $k_z$ as the good quantum number. On the other hand, the Fermi loop, connecting two distinct Fermi points in two opposite surfaces, with $k_x$ being the good quantum number, causes the quantization in sheet Hall conductivity for $\mathbf{ B}\parallel x$. The quantization is almost lost (perfectly remained) in the type-II phase for $\mathbf{ B}\parallel x$ ($\mathbf{ B}\parallel z$). Interestingly, the jump profiles between the adjacent quantized plateaus change with the topological charge for both of the above cases. The momentum-integrated three-dimensional Hall conductivity is not quantized; however, it bears the signature of chiral LLs as resulting in the linear dependence on $μ$ for small $μ$. The linear zone (its slope) reduces (increases) as the tilt (topological charge) of the underlying WSM increases. △ Less

Submitted 31 July, 2022; v1 submitted 17 February, 2022; originally announced February 2022.

Comments: 19 pages and 9 figures

Journal ref: Phys. Rev. B 106, 045424 (2022)

Spin susceptibilities in magnetic type-I and type-II Weyl semimetals

Authors: Feng Xiong, Xingjie Han, Carsten Honerkamp

Abstract: We investigate interacting spin susceptibilities in lattice models for $\mathcal{T}$-reversal symmetry-broken Weyl semimetals. We employ a random phase approximation (RPA) method for the spin-SU(2)-symmetry-broken case that includes mixtures of ladder and bubble diagrams, beyond a SU(2)-symmetric case. Within this approach, the relations between the tendency towards magnetic order and the band str… ▽ More We investigate interacting spin susceptibilities in lattice models for $\mathcal{T}$-reversal symmetry-broken Weyl semimetals. We employ a random phase approximation (RPA) method for the spin-SU(2)-symmetry-broken case that includes mixtures of ladder and bubble diagrams, beyond a SU(2)-symmetric case. Within this approach, the relations between the tendency towards magnetic order and the band structure tilt parameter $γ$ under different temperatures are explored. The critical interaction strength $U_c$ for magnetic ordering decreases as the tilt term changes from type-I Weyl semimetals to type-II. The lower temperature, the sharper is the drop in $U_c$ at the critical point between them. The variation of $U_c$ with a slight do** near half-filling is also studied. It is generally found that these Weyl systems show a strongly anisotropic spin response with an enhanced doubly degenerate transverse susceptibility perpendicular to tilt direction, inherited from $\mathcal{C}_{4z}$ rational symmetry of bare Hamiltonian, but with the longitudinal response suppressed with respect to that. For small tilts $γ$ and strong enough interaction, we find two degenerate ordering patterns with spin order orthogonal to the tilt direction but much shorter spin correlation length parallel to the spin direction. With increasing the tilt, the system develops instabilities with respect to in-plane magnetic orders with wavevector $(0,π, q_z)$ and $(π,0, q_z)$, with $q_z$ increasing from 0 to $π$ before the transition to a type-II Weyl semimetal is reached. These results indicate a greater richness of magnetic phases in correlated Weyl semimetals that also pose challenges for precise theoretical descriptions. △ Less

Submitted 24 March, 2021; originally announced March 2021.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. B 104, 115151 (2021)

Generating Majorana qubit coherence in Majorana Aharonov-Bohm interferometer

Authors: Fei-Lei Xiong, Hon-Lam Lai, Wei-Min Zhang

Abstract: We propose an Aharonov-Bohm interferometer consisted of two topological superconducting chains (TSCs) to generate coherence of Majorana qubits, each qubit is made of two Majorana zero modes (MZMs) with the definite fermion parity. We obtain the generalized exact master equation as well as its solution and study the real-time dynamics of the MZM qubit states under various operations. We demonstrate… ▽ More We propose an Aharonov-Bohm interferometer consisted of two topological superconducting chains (TSCs) to generate coherence of Majorana qubits, each qubit is made of two Majorana zero modes (MZMs) with the definite fermion parity. We obtain the generalized exact master equation as well as its solution and study the real-time dynamics of the MZM qubit states under various operations. We demonstrate that by tuning the magnetic flux, the decoherence rates can be modified significantly, and dissipationless MZMs can be generated. By applying the bias voltage to the leads, one can manipulate MZM qubit coherence and generate a nearly pure superposition state of Majorana qubit. Moreover, parity flip** between MZM qubits with different fermion parities can be realized by controlling the coupling between the leads and the TSCs through gate voltages. △ Less

Submitted 21 February, 2021; originally announced February 2021.

Comments: 8 pages, 5 figures

Spin Susceptibility Above the Superfluid Onset in Ultracold Fermi Gases

Authors: Yun Long, Feng Xiong, Colin V. Parker

Abstract: Ultracold atomic Fermi gases can be tuned to interact strongly, where they display spectroscopic signatures above the superfluid transition reminiscent of the pseudogap in cuprates. However, the extent of the analogy can be questioned, since thermodynamic quantities in the low temperature spin-imbalanced normal state can be described successfully using Fermi liquid theory. Here we present spin sus… ▽ More Ultracold atomic Fermi gases can be tuned to interact strongly, where they display spectroscopic signatures above the superfluid transition reminiscent of the pseudogap in cuprates. However, the extent of the analogy can be questioned, since thermodynamic quantities in the low temperature spin-imbalanced normal state can be described successfully using Fermi liquid theory. Here we present spin susceptibility measurements across the interaction strength-temperature phase diagram using a novel radiofrequency technique with ultracold $^6\textrm{Li}$ gases. For all significant interaction strengths and at all temperatures we find the spin susceptibility is reduced compared with the equivalent value for a non-interacting Fermi gas, with the low temperature results consistent with previous studies. However, our measurements extend to higher temperatures, where we find that the reduction persists consistently with a mean-field scenario. At unitarity, we can use the local density approximation to extract the spin susceptibility for the uniform gas, which is well described by mean-field models at temperatures from the superfluid transition to the Fermi temperature. △ Less

Submitted 10 November, 2020; originally announced November 2020.

Journal ref: Phys. Rev. Lett. 126, 153402 (2021)

Simulation of Dynamical Quantum Phase Transition of the 1D Transverse Ising Model with a Double-chain Bose-Hubbard model

Authors: Ren Liao, Fangyu Xiong, Xuzong Chen

Abstract: We propose a spinless Bose-Hubbard model in an one-dimensional (1D) double-chain tilted lattice at unit filling per cell. A subspace of this model can be faithfully mapped to the 1D transverse Ising model through superexchange interaction with second-order perturbation theory. At a valid parameter region, numerical results show good agreement of these two models both on energy spectrums and correl… ▽ More We propose a spinless Bose-Hubbard model in an one-dimensional (1D) double-chain tilted lattice at unit filling per cell. A subspace of this model can be faithfully mapped to the 1D transverse Ising model through superexchange interaction with second-order perturbation theory. At a valid parameter region, numerical results show good agreement of these two models both on energy spectrums and correlation functions. And we show that the dynamical quantum phase transition of the effective 1D transverse Ising model can be simulated. With carefully designed procedures for producing the dynamical quantum phase transition of the 1D transverse Ising model from a Mott insulator, the rate function of the recurrence probability to the ground-state manifold shows the same nonanalyticality at periodic time points as theory predicts. Our results may give some inspirations on simulating 1D transverse Ising model with superexchange interaction and exploring its dynamical quantum phase transition in experiment. △ Less

Submitted 12 April, 2020; v1 submitted 4 March, 2020; originally announced March 2020.

Journal ref: Phys. Rev. A 103, 043312 (2021)

Exciton interaction induced spin splitting in MoS$_2$ monolayer

Authors: Yao Li, G. Li, Xiaokun Zhai, Shi Fu Xiong, Hongjun Liu, Xiao Wang, Haitao Chen, Ying Gao, Xiu Zhang, Tong Liu, Yuan Ren, Xuekai Ma, Hongbin Fu, T. Gao

Abstract: By pum** nonresonantly a MoS$_2$ monolayer at $13$ K under a circularly polarized cw laser, we observe exciton energy redshifts that break the degeneracy between B excitons with opposite spin. The energy splitting increases monotonically with the laser power reaching as much as $18$ meV, while it diminishes with the temperature. The phenomenon can be explained theoretically by considering simult… ▽ More By pum** nonresonantly a MoS$_2$ monolayer at $13$ K under a circularly polarized cw laser, we observe exciton energy redshifts that break the degeneracy between B excitons with opposite spin. The energy splitting increases monotonically with the laser power reaching as much as $18$ meV, while it diminishes with the temperature. The phenomenon can be explained theoretically by considering simultaneously the bandgap renormalization which gives rise to the redshift and exciton-exciton Coulomb exchange interaction which is responsible for the spin-dependent splitting. Our results offer a simple scheme to control the valley degree of freedom in MoS$_2$ monolayer and provide an accessible method in investigating many-body exciton exciton interaction in such materials. △ Less

Submitted 6 January, 2020; originally announced January 2020.

Spin and charge transport in topological nodal-line semimetals

Authors: Yao Zhou, Feng Xiong, Weipeng Chen, ** An

Abstract: We study transport properties of topological Weyl nodal-line semimetals(NLSs). Starting from a minimal lattice model with a single nodal loop, and by focusing on a normal-metal-NLS-normal-metal junction, we investigate the dependence of the novel transport behavior on the orientation of the nodal loop. When the loop is parallel to the junction interfaces, the transmitted current is found to be nea… ▽ More We study transport properties of topological Weyl nodal-line semimetals(NLSs). Starting from a minimal lattice model with a single nodal loop, and by focusing on a normal-metal-NLS-normal-metal junction, we investigate the dependence of the novel transport behavior on the orientation of the nodal loop. When the loop is parallel to the junction interfaces, the transmitted current is found to be nearly fully spin-polarized. Correspondingly, there exists a spin orientation, along which the incident electrons would be totally reflected. An unusual resonance of half transmission with the participation of surface states also occurs for a pair of incident electrons with opposite spin orientations. All these phenomena have been shown to originate from the existence of a single forward-propagating mode in the NLS of the junction, and argued to survive in more generic multi-band Weyl NLSs. △ Less

Submitted 25 November, 2019; originally announced November 2019.

Comments: 12 pages, 11 figures

Journal ref: Phys. Rev. B 101, 075125 (2020)

Comparison of Shear and Compression Jammed Packings of Frictional Disks

Authors: F. Xiong, P. Wang, A. H. Clark, T. Bertrand, N. T. Ouellette, M. D. Shattuck, C. S. O'Hern

Abstract: We compare the structural and mechanical properties of mechanically stable (MS) packings of frictional disks in two spatial dimensions (2D) generated with isotropic compression and simple shear protocols from discrete element modeling (DEM) simulations. We find that the average contact number and packing fraction at jamming onset are similar (with relative deviations $< 0.5\%$) for MS packings gen… ▽ More We compare the structural and mechanical properties of mechanically stable (MS) packings of frictional disks in two spatial dimensions (2D) generated with isotropic compression and simple shear protocols from discrete element modeling (DEM) simulations. We find that the average contact number and packing fraction at jamming onset are similar (with relative deviations $< 0.5\%$) for MS packings generated via compression and shear. In contrast, the average stress anisotropy $\langle {\hat Σ}_{xy} \rangle = 0$ for MS packings generated via isotropic compression, whereas $\langle {\hat Σ}_{xy} \rangle >0$ for MS packings generated via simple shear. To investigate the difference in the stress state of MS packings, we develop packing-generation protocols to first unjam the MS packings, remove the frictional contacts, and then rejam them. Using these protocols, we are able to obtain rejammed packings with nearly identical particle positions and stress anisotropy distributions compared to the original jammed packings. However, we find that when we directly compare the original jammed packings and rejammed ones, there are finite stress anisotropy deviations $Δ{\hat Σ}_{xy}$. The deviations are smaller than the stress anisotropy fluctuations obtained by enumerating the force solutions within the null space of the contact networks generated via the DEM simulations. These results emphasize that even though the compression and shear jamming protocols generate packings with the same contact networks, there can be residual differences in the normal and tangential forces at each contact, and thus differences in the stress anisotropy. △ Less

Submitted 2 June, 2019; originally announced June 2019.

Comments: 11 pages, 11 figures

Journal ref: Granular Matter 21 (2019) 109

Quasi-ballistic thermal transport across MoS$_2$ thin films

Authors: Aditya Sood, Feng Xiong, Shunda Chen, Ramez Cheaito, Feifei Lian, Mehdi Asheghi, Yi Cui, Davide Donadio, Kenneth E. Goodson, Eric Pop

Abstract: Layered two-dimensional (2D) materials have highly anisotropic thermal properties between the in-plane and cross-plane directions. In general, it is thought that cross-plane thermal conductivities ($κ_z$) are low, and therefore c-axis phonon mean free paths (MFPs) are small. Here, we measure $κ_z$ across MoS$_2$ films of varying thickness (20 to 240 nm) and uncover evidence of very long c-axis pho… ▽ More Layered two-dimensional (2D) materials have highly anisotropic thermal properties between the in-plane and cross-plane directions. In general, it is thought that cross-plane thermal conductivities ($κ_z$) are low, and therefore c-axis phonon mean free paths (MFPs) are small. Here, we measure $κ_z$ across MoS$_2$ films of varying thickness (20 to 240 nm) and uncover evidence of very long c-axis phonon MFPs at room temperature in these layered semiconductors. Experimental data obtained using time-domain thermoreflectance (TDTR) are in good agreement with first-principles density functional theory (DFT). These calculations reveal that ~50% of the heat is carried by phonons with MFP >200 nm, exceeding kinetic theory estimates by nearly two orders of magnitude. Because of quasi-ballistic effects, the $κ_z$ of nanometer thin films of MoS$_2$ scales with their thickness and the volumetric thermal resistance asymptotes to a non-zero value, ~10 m$^{2}$KGW$^{-1}$. This contributes as much as 30% to the total thermal resistance of a 20 nm thick film, the rest being limited by thermal interface resistance with the SiO$_2$ substrate and top-side aluminum transducer. These findings are essential for understanding heat flow across nanometer-thin films of MoS$_2$ for optoelectronic and thermoelectric applications. △ Less

Submitted 7 March, 2019; v1 submitted 22 February, 2019; originally announced February 2019.

Journal ref: Nano Lett. 2019

An electrochemical thermal transistor

Authors: Aditya Sood, Feng Xiong, Shunda Chen, Haotian Wang, Daniele Selli, **song Zhang, Connor J. McClellan, Jie Sun, Davide Donadio, Yi Cui, Eric Pop, Kenneth E. Goodson

Abstract: The ability to actively regulate heat flow at the nanoscale could be a game changer for applications in thermal management and energy harvesting. Such a breakthrough could also enable the control of heat flow using thermal circuits, in a manner analogous to electronic circuits. Here we demonstrate switchable thermal transistors with an order of magnitude thermal on/off ratio, based on reversible e… ▽ More The ability to actively regulate heat flow at the nanoscale could be a game changer for applications in thermal management and energy harvesting. Such a breakthrough could also enable the control of heat flow using thermal circuits, in a manner analogous to electronic circuits. Here we demonstrate switchable thermal transistors with an order of magnitude thermal on/off ratio, based on reversible electrochemical lithium intercalation in MoS2 thin films. We use spatially-resolved time-domain thermoreflectance to map the lithium ion distribution during device operation, and atomic force microscopy to show that the lithiated state correlates with increased thickness and surface roughness. First principles calculations reveal that the thermal conductance modulation is due to phonon scattering by lithium rattler modes, c-axis strain, and stacking disorder. This study lays the foundation for electrochemically-driven nanoscale thermal regulators, and establishes thermal metrology as a useful probe of spatio-temporal intercalant dynamics in nanomaterials. △ Less

Submitted 14 January, 2019; originally announced January 2019.

Journal ref: Nature Communicationsvolume 9, Article number: 4510 (2018)

Thermal Transport Across Graphene Step Junctions

Authors: Miguel Munoz Rojo, Zuanyi Li, Charles Sievers, Alex C. Bornstein, Eilam Yalon, Sanchit Deshmukh, Sam Vaziri, Myung-Ho Bae, Feng Xiong, Davide Donadio, Eric Pop

Abstract: Step junctions are often present in layered materials, i.e. where single-layer regions meet multi-layer regions, yet their effect on thermal transport is not understood to date. Here, we measure heat flow across graphene junctions (GJs) from monolayer to bilayer graphene, as well as bilayer to four-layer graphene for the first time, in both heat flow directions. The thermal conductance of the mono… ▽ More Step junctions are often present in layered materials, i.e. where single-layer regions meet multi-layer regions, yet their effect on thermal transport is not understood to date. Here, we measure heat flow across graphene junctions (GJs) from monolayer to bilayer graphene, as well as bilayer to four-layer graphene for the first time, in both heat flow directions. The thermal conductance of the monolayer-bilayer GJ device ranges from ~0.5 to 9.1x10^8 Wm-2K-1 between 50 K to 300 K. Atomistic simulations of such GJ device reveal that graphene layers are relatively decoupled, and the low thermal conductance of the device is determined by the resistance between the two dis-tinct graphene layers. In these conditions the junction plays a negligible effect. To prove that the decoupling between layers controls thermal transport in the junction, the heat flow in both directions was measured, showing no evidence of thermal asymmetry or rectification (within experimental error bars). For large-area graphene applications, this signifies that small bilayer (or multilayer) islands have little or no contribution to overall thermal transport. △ Less

Submitted 30 November, 2018; originally announced November 2018.

Journal ref: 2D Materials, 6, 011005 (2019)

All-optical production of ${}^6\textrm{Li}$ molecular BEC in excited hyperfine levels

Authors: Yun Long, Feng Xiong, Vinod Gaire, Cameron Galigan, Colin V. Parker

Abstract: We present an all-optical method for achieving molecular Bose-Einstein condensates of ${}^6\textrm{Li}$. We demonstrate this with mixtures in the lowest two (1-2), and second lowest two (2-3) hyperfine states. For the 1-2 mixture, we can achieve condensate fractions of 36\%, with $9\times10^4$ atoms at $0.05\textrm{ }μ\textrm{K}$ temperature. For the 2-3 mixture, we have 28\% condensed with… ▽ More We present an all-optical method for achieving molecular Bose-Einstein condensates of ${}^6\textrm{Li}$. We demonstrate this with mixtures in the lowest two (1-2), and second lowest two (2-3) hyperfine states. For the 1-2 mixture, we can achieve condensate fractions of 36\%, with $9\times10^4$ atoms at $0.05\textrm{ }μ\textrm{K}$ temperature. For the 2-3 mixture, we have 28\% condensed with $3.2\times10^4$ atoms at $0.05\textrm{ }μ\textrm{K}$ temperature. We use mostly standard methods, but make a number of refinements in the magnetic bias coils compared with earlier work. Our method imposes minimal constraints on subsequent experiments by allowing plenty of optical access while requiring only one high-vacuum chamber. We use an optical system designed around minimizing the number of active elements, and we can accomplish slowing and sub-Doppler cooling with a single tapered amplifier △ Less

Submitted 17 September, 2018; originally announced September 2018.

Journal ref: Phys. Rev. A 98, 043626 (2018)

Hopf-link multi-Weyl-loop topological semimetals

Authors: Yao Zhou, Feng Xiong, Xiangang Wan, ** An

Abstract: We construct a generic two-band model which can describe topological Weyl semimetals with multiple closed Weyl loops. All the existing multi-Weyl-loop semimetals including the nodal-net, or nodal-chain and Hopf-link states can be examined within one same framework. Based on a two-loop model, the corresponding drum-head surface states for these topologically different bulk states are studied and co… ▽ More We construct a generic two-band model which can describe topological Weyl semimetals with multiple closed Weyl loops. All the existing multi-Weyl-loop semimetals including the nodal-net, or nodal-chain and Hopf-link states can be examined within one same framework. Based on a two-loop model, the corresponding drum-head surface states for these topologically different bulk states are studied and compared with each other. The connection of our model with Hopf insulators is also discussed. Furthermore, to identify experimentally these topologically different Weyl semimetal states, especially distinguish the Hopf-link from unlinked ones, we also investigate their Landau levels. It is found that the Hopf-link state can be characterized by the existence of a quadruply degenerate zero-energy Landau band, regardless of the direction of the magnetic field. △ Less

Submitted 12 January, 2018; originally announced January 2018.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 97, 155140 (2018)

Temperature Dependent Thermal Boundary Conductance of Monolayer MoS$_2$ by Raman Thermometry

Authors: Eilam Yalon, Özgür Burak Aslan, Kirby K. H. Smithe, Connor J. McClellan, Saurabh V. Suryavanshi, Feng Xiong, Aditya Sood, Christopher M. Neumann, Xiaoqing Xu, Kenneth E. Goodson, Tony F. Heinz, Eric Pop

Abstract: The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS$_2$ with AlN and SiO$_2$, using Raman thermometry with laser-induced heating. The temperature-dependent optical absorption of the 2D material is crucial in suc… ▽ More The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS$_2$ with AlN and SiO$_2$, using Raman thermometry with laser-induced heating. The temperature-dependent optical absorption of the 2D material is crucial in such experiments, which we characterize here for the first time above room temperature. We obtain TBC ~ 15 MWm$^-$$^2$K$^-$$^1$ near room temperature, increasing as ~ T$^0$$^.$$^6$$^5$ in the range 300 - 600 K. The similar TBC of MoS$_2$ with the two substrates indicates that MoS$_2$ is the "softer" material with weaker phonon irradiance, and the relatively low TBC signifies that such interfaces present a key bottleneck in energy dissipation from 2D devices. Our approach is needed to correctly perform Raman thermometry of 2D materials, and our findings are key for understanding energy coupling at the nanoscale. △ Less

Submitted 8 February, 2020; v1 submitted 20 October, 2017; originally announced October 2017.

Journal ref: ACS Applied Materials & Interfaces (2017)

Spatially Resolved Thermometry of Resistive Memory Devices

Authors: Eilam Yalon, Sanchit Deshmukh, Miguel Muñoz Rojo, Feifei Lian, Christopher M. Neumann, Feng Xiong, Eric Pop

Abstract: The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the combination of Raman thermometry and scanning thermal microscopy (SThM) can enable such measurements with high spatial resolution. We report temperature-dependen… ▽ More The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the combination of Raman thermometry and scanning thermal microscopy (SThM) can enable such measurements with high spatial resolution. We report temperature-dependent Raman spectra of HfO$_2$, TiO$_2$ and Ge$_2$Sb$_2$Te$_5$ (GST) films, and demonstrate direct measurements of temperature profiles in lateral PCM devices. Our measurements reveal that electrical and thermal interfaces dominate the operation of such devices, uncovering a thermal boundary resistance of 30 m$^2$K$^{-1}$GW$^{-1}$ at GST-SiO$_2$ interfaces and an effective thermopower 350 $μ$V/K at GST-Pt interfaces. We also discuss possible pathways to apply Raman thermometry and SThM techniques to nanoscale and vertical resistive memory devices. △ Less

Submitted 7 June, 2017; originally announced June 2017.

Energy Dissipation in Monolayer MoS$_2$ Electronics

Authors: Eilam Yalon, Connor J. McClellan, Kirby K. H. Smithe, Miguel Muñoz Rojo, Runjie, Xu, Saurabh V. Suryavanshi, Alex J. Gabourie, Christopher M. Neumann, Feng Xiong, Amir B. Farimani, Eric Pop

Abstract: The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or multi-layered processors, both being critical thermal bottlenecks. To shed light into fundamental aspects of this problem, here we report the first direct measuremen… ▽ More The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or multi-layered processors, both being critical thermal bottlenecks. To shed light into fundamental aspects of this problem, here we report the first direct measurement of spatially resolved temperature in functioning 2D monolayer MoS$_2$ transistors. Using Raman thermometry we simultaneously obtain temperature maps of the device channel and its substrate. This differential measurement reveals the thermal boundary conductance (TBC) of the MoS$_2$ interface (14 $\pm$ 4 MWm$^-$$^2$K$^-$$^1$) is an order magnitude larger than previously thought, yet near the low end of known solid-solid interfaces. Our study also reveals unexpected insight into non-uniformities of the MoS$_2$ transistors (small bilayer regions), which do not cause significant self-heating, suggesting that such semiconductors are less sensitive to inhomogeneity than expected. These results provide key insights into energy dissipation of 2D semiconductors and pave the way for the future design of energy-efficient 2D electronics. △ Less

Submitted 26 April, 2017; originally announced April 2017.

Journal ref: Nano Letters (2017)

SANTA: Self-Aligned Nanotrench Ablation via Joule Heating for Probing Sub-20 nm Devices

Authors: Feng Xiong, Sanchit Deshmukh, Sungduk Hong, Yuan Dai, Ashkan Behnam, Feifei Lian, Eric Pop

Abstract: Manipulating materials at the nanometer scale is challenging, particularly if alignment with nanoscale electrodes is desired. Here we describe a lithography-free, self-aligned nanotrench ablation (SANTA) technique to create nanoscale trenches in a polymer like poly(methyl) methacrylate (PMMA). The nanotrenches are self-aligned with carbon nanotube (CNT) and graphene ribbon electrodes through a sim… ▽ More Manipulating materials at the nanometer scale is challenging, particularly if alignment with nanoscale electrodes is desired. Here we describe a lithography-free, self-aligned nanotrench ablation (SANTA) technique to create nanoscale trenches in a polymer like poly(methyl) methacrylate (PMMA). The nanotrenches are self-aligned with carbon nanotube (CNT) and graphene ribbon electrodes through a simple Joule heating process. Using simulations and experiments we investigate how the Joule power, ambient temperature, PMMA thickness, and substrate properties can improve the spatial resolution of this technique. We achieve sub-20 nm nanotrenches for the first time, by lowering the ambient temperature and reducing the PMMA thickness. We also demonstrate a functioning nanoscale resistive memory (RRAM) bit self-aligned with a CNT control device, achieved through the SANTA approach. This technique provides an elegant and inexpensive method to probe nanoscale devices using self-aligned electrodes, without the use of conventional alignment or lithography steps. △ Less

Submitted 16 June, 2016; originally announced June 2016.

Comments: 18 pages, 5 figures in the manuscript

Nanoscale Phase Change Memory with Graphene Ribbon Electrodes

Authors: Ashkan Behnam, Feng Xiong, Andrea Cappelli, Ning C. Wang, Enrique A. Carrion, Sungduk Hong, Yuan Dai, Austin S. Lyons, Edmond K. Chow, Enrico Piccinini, Carlo Jacoboni, Eric Pop

Abstract: Phase change memory (PCM) devices are known to reduce in power consumption as the bit volume and contact area of their electrodes are scaled down. Here, we demonstrate two types of low-power PCM devices with lateral graphene ribbon electrodes: one in which the graphene is patterned into narrow nanoribbons and the other where the phase change material is patterned into nanoribbons. The sharp graphe… ▽ More Phase change memory (PCM) devices are known to reduce in power consumption as the bit volume and contact area of their electrodes are scaled down. Here, we demonstrate two types of low-power PCM devices with lateral graphene ribbon electrodes: one in which the graphene is patterned into narrow nanoribbons and the other where the phase change material is patterned into nanoribbons. The sharp graphene "edge" contacts enable switching with threshold voltages as low as ~3 V, low programming currents (<1 μA SET, <10 μA RESET) and ON/OFF ratios >100. Large-scale fabrication with graphene grown by chemical vapor deposition also enables the study of heterogeneous integration and that of variability for such nanomaterials and devices. △ Less

Submitted 20 August, 2015; originally announced August 2015.

Comments: submitted to Applied Physics Letters

Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors

Authors: Enrique A. Carrion, Andrey Y. Serov, Sharnali Islam, Ashkan Behnam, Akshay Malik, Feng Xiong, Massimiliano Bianchi, Roman Sordan, Eric Pop

Abstract: We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent with charge trap** mechanisms. Pulsed operation leads to hysteresis-free I-V characteristics, which are studied with pulses as short as 75 ns and 150 ns at t… ▽ More We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent with charge trap** mechanisms. Pulsed operation leads to hysteresis-free I-V characteristics, which are studied with pulses as short as 75 ns and 150 ns at the drain and gate, respectively. The pulsed operation enables reliable extraction of GFET intrinsic transconductance and mobility values independent of sweep direction, which are up to a factor of two higher than those obtained from simple DC characterization. We also observe drain-bias-induced charge trap** effects at lateral fields greater than 0.1 V/um. In addition, using modeling and capacitance-voltage measurements we extract charge trap densities up to 10^12 1/cm^2 in the top gate dielectric (here Al2O3). Our study illustrates important time- and field-dependent imperfections of top-gated GFETs with high-k dielectrics, which must be carefully considered for future developments of this technology △ Less

Submitted 31 March, 2014; originally announced April 2014.

Comments: to appear in IEEE Transactions on Electron Devices (2014)

Direct observation of nanometer-scale Joule and Peltier effects in phase change memory devices

Authors: Kyle L. Grosse, Feng Xiong, Sungduk Hong, William P. King, Eric Pop

Abstract: We measure power dissipation in phase change memory (PCM) devices by scanning Joule ex-pansion microscopy (SJEM) with ~50 nm spatial and 0.2 K temperature resolution. The temperature rise in the Ge2Sb2Te5 (GST) is dominated by Joule heating, but at the GST-TiW contacts it is a combination of Peltier and current crowding effects. Comparison of SJEM and electrical characterization with simulations o… ▽ More We measure power dissipation in phase change memory (PCM) devices by scanning Joule ex-pansion microscopy (SJEM) with ~50 nm spatial and 0.2 K temperature resolution. The temperature rise in the Ge2Sb2Te5 (GST) is dominated by Joule heating, but at the GST-TiW contacts it is a combination of Peltier and current crowding effects. Comparison of SJEM and electrical characterization with simulations of the PCM devices uncovers a thermopower ~350 uV/K for 25 nm thick films of face centered-cubic crystallized GST, and contact resistance ~2.0 x 10^-8 Ohm-m2. Knowledge of such nanoscale Joule, Peltier, and current crowding effects is essential for energy-efficient design of future PCM technology. △ Less

Submitted 21 May, 2013; originally announced May 2013.

Comments: includes supplement

Journal ref: Applied Physics Letters, vol. 102, p. 193503 (2013)

Ballistic to diffusive crossover of heat flow in graphene ribbons

Authors: Myung-Ho Bae, Zuanyi Li, Zlatan Aksamija, Pierre N. Martin, Feng Xiong, Zhun-Yong Ong, Irena Knezevic, Eric Pop

Abstract: Heat flow in nanomaterials is an important area of study, with both fundamental and technological implications. However, little is known about heat flow in two-dimensional (2D) devices or interconnects with dimensions comparable to the phonon mean free path (mfp). Here, we find that short, quarter-micron graphene samples reach ~35% of the ballistic heat conductance limit up to room temperature, en… ▽ More Heat flow in nanomaterials is an important area of study, with both fundamental and technological implications. However, little is known about heat flow in two-dimensional (2D) devices or interconnects with dimensions comparable to the phonon mean free path (mfp). Here, we find that short, quarter-micron graphene samples reach ~35% of the ballistic heat conductance limit up to room temperature, enabled by the relatively large phonon mfp (~100 nm) in substrate-supported graphene. In contrast, patterning similar samples into nanoribbons (GNRs) leads to a diffusive heat flow regime that is controlled by ribbon width and edge disorder. In the edge-controlled regime, the GNR thermal conductivity scales with width approximately as ~W^{1.8+/-0.3}, being about 100 W/m/K in 65-nm-wide GNRs, at room temperature. Manipulation of device dimensions on the scale of the phonon mfp can be used to achieve full control of their heat-carrying properties, approaching fundamentally limited upper or lower bounds. △ Less

Submitted 3 April, 2013; originally announced April 2013.

Comments: Nature Communications, DOI: 10.1038/ncomms2755 (2013)

Journal ref: Nature Communications 4, 1734 (2013)

Effects of Tip-Nanotube Interactions on Atomic Force Microscopy Imaging of Carbon Nanotubes

Authors: Rouholla Alizadegan, Albert D. Liao, Feng Xiong, Eric Pop, K. Jimmy Hsia

Abstract: We examine the effect of van der Waals (vdW) interactions between atomic force microscope (AFM) tips and individual carbon nanotubes (CNTs) supported on SiO2. Molecular dynamics (MD) simulations reveal how CNTs deform during AFM measurement, irrespective of the AFM tip material. The apparent height of a single- (double-) walled CNT can be used to estimate its diameter up to ~2 nm (~3 nm), but for… ▽ More We examine the effect of van der Waals (vdW) interactions between atomic force microscope (AFM) tips and individual carbon nanotubes (CNTs) supported on SiO2. Molecular dynamics (MD) simulations reveal how CNTs deform during AFM measurement, irrespective of the AFM tip material. The apparent height of a single- (double-) walled CNT can be used to estimate its diameter up to ~2 nm (~3 nm), but for larger diameters the CNT cross-section is no longer circular. Our simulations were compared against CNT dimensions obtained from AFM measurements and resonant Raman spectroscopy, with good agreement for the smaller CNT di-ameters. In general, AFM measurements of large-diameter CNTs must be interpreted with care, but the reliability of the approach is improved if knowledge of the number of CNT walls is avail-able, or if additional verification (e.g. by optical techniques) can be obtained. △ Less

Submitted 6 July, 2012; originally announced July 2012.

Journal ref: Nano Res. 2012, 5(4): 235-247

Inducing Chalcogenide Phase Change with Ultra-Narrow Carbon Nanotube Heaters

Authors: Feng Xiong, Albert Liao, Eric Pop

Abstract: Carbon nanotube (CNT) heaters with sub-5 nm diameter induce highly localized phase change in Ge2Sb2Te5 (GST) chalcogenide. A significant reduction in resistance of test structures is measured as the GST near the CNT heater crystallizes. Effective GST heating occurs at currents as low as 25 uA, significantly lower than in conventional phase change memory with metal electrodes (0.1-0.5 mA). Atomic… ▽ More Carbon nanotube (CNT) heaters with sub-5 nm diameter induce highly localized phase change in Ge2Sb2Te5 (GST) chalcogenide. A significant reduction in resistance of test structures is measured as the GST near the CNT heater crystallizes. Effective GST heating occurs at currents as low as 25 uA, significantly lower than in conventional phase change memory with metal electrodes (0.1-0.5 mA). Atomic force microscopy reveals nucleation sites associated with phase change in GST around the CNT heater. Finite element simulations confirm electrical characteristics consistent with the experiments, and reveal the current and phase distribution in GST. △ Less

Submitted 26 December, 2009; v1 submitted 24 October, 2009; originally announced October 2009.

Journal ref: Appl. Phys. Lett. 95, 243103 (2009)