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Efficient and ultra-stable perovskite light-emitting diodes
Authors:
Bingbing Guo,
Runchen Lai,
Sijie Jiang,
Yaxiao Lian,
Zhixiang Ren,
Puyang Li,
Xuhui Cao,
Shiyu Xing,
Yaxin Wang,
Weiwei Li,
Chen Zou,
Mengyu Chen,
Cheng Li,
Baodan Zhao,
Dawei Di
Abstract:
Perovskite light-emitting diodes (PeLEDs) have emerged as a strong contender for next-generation display and information technologies. However, similar to perovskite solar cells, the poor operational stability remains the main obstacle toward commercial applications. Here we demonstrate ultra-stable and efficient PeLEDs with extraordinary operational lifetimes (T50) of 1.0x10^4 h, 2.8x10^4 h, 5.4x…
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Perovskite light-emitting diodes (PeLEDs) have emerged as a strong contender for next-generation display and information technologies. However, similar to perovskite solar cells, the poor operational stability remains the main obstacle toward commercial applications. Here we demonstrate ultra-stable and efficient PeLEDs with extraordinary operational lifetimes (T50) of 1.0x10^4 h, 2.8x10^4 h, 5.4x10^5 h, and 1.9x10^6 h at initial radiance (or current densities) of 3.7 W/sr/m2 (~5 mA/cm2), 2.1 W/sr/m2 (~3.2 mA/cm2), 0.42 W/sr/m2 (~1.1 mA/cm2), and 0.21 W/sr/m2 (~0.7 mA/cm2) respectively, and external quantum efficiencies of up to 22.8%. Key to this breakthrough is the introduction of a dipolar molecular stabilizer, which serves two critical roles simultaneously. First, it prevents the detrimental transformation and decomposition of the alpha-phase FAPbI3 perovskite, by inhibiting the formation of lead and iodide intermediates. Secondly, hysteresis-free device operation and microscopic luminescence imaging experiments reveal substantially suppressed ion migration in the emissive perovskite. The record-long PeLED lifespans are encouraging, as they now satisfy the stability requirement for commercial organic LEDs (OLEDs). These results remove the critical concern that halide perovskite devices may be intrinsically unstable, paving the path toward industrial applications.
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Submitted 16 April, 2022;
originally announced April 2022.
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Interweaving Polar Charge Orders in a Layered Metallic Super-atomic Crystal
Authors:
Shuya Xing,
Linlu Wu,
Zilu Wang,
Xu Chen,
Haining Liu,
Shuo Han,
Le Lei,
linwei Zhou,
Qi Zheng,
Li Huang,
Xiao Lin,
Liming Xie,
Xiaolong Chen,
Hong-Jun Gao,
Zhihai Cheng,
Jiangang Guo,
Shancai Wang,
Wei Ji
Abstract:
Electronic properties of super-atomic crystals have not been sufficiently explored due to the versatility of their building units; moreover, their inter-unit couplings are even poorly understood. Here, we present a joint experiment-theory investigation of a rational-designed layered super-atomic crystal of Au6Te12Se8 cubes, stacked by non-covalent inter-cube quasi-bonds. We found a sequential-emer…
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Electronic properties of super-atomic crystals have not been sufficiently explored due to the versatility of their building units; moreover, their inter-unit couplings are even poorly understood. Here, we present a joint experiment-theory investigation of a rational-designed layered super-atomic crystal of Au6Te12Se8 cubes, stacked by non-covalent inter-cube quasi-bonds. We found a sequential-emerged anisotropic triple-cube charge-density-wave (tc-CDW) and polarized metallic states below 120 K, as revealed via scanning tunneling microscopy/spectroscopy, angle-resolved photoemission spectroscopy, transport measurement, Raman spectra, and density functional theory. The polarized states are locked in an anti-parallel configuration, which is required for maintaining the inversion symmetry of the center-cube in the tc-CDW. The anti-polar metallic states are thus interweaved by the charge-density-wave and the polarized metallic states, and primarily ascribed to electronic effects via theoretical calculations. This work not only demonstrates a microscopic picture of the interweaved CDW and polarized charge orders in the super-atomic crystal of ATS, but also sheds light on expanding the existing category of quantum materials to non-covalent solids.
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Submitted 12 October, 2022; v1 submitted 18 October, 2021;
originally announced October 2021.
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Ultralow-voltage operation of light-emitting diodes
Authors:
Yaxiao Lian,
Dongchen Lan,
Shiyu Xing,
Bingbing Guo,
Runchen Lai,
Baodan Zhao,
Richard H. Friend,
Dawei Di
Abstract:
The radiative recombination of injected charge carriers gives rise to electroluminescence (EL), a central process for light-emitting diode (LED) operation. It is often presumed in some emerging fields of optoelectronics, including perovskite and organic LEDs, that the minimum voltage required for light emission is the semiconductor bandgap divided by the elementary charge. Here we show for many cl…
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The radiative recombination of injected charge carriers gives rise to electroluminescence (EL), a central process for light-emitting diode (LED) operation. It is often presumed in some emerging fields of optoelectronics, including perovskite and organic LEDs, that the minimum voltage required for light emission is the semiconductor bandgap divided by the elementary charge. Here we show for many classes of LEDs, including those based on metal halide perovskite, organic, chalcogenide quantum-dot and commercial III-V semiconductors, photon emission can be generally observed at record-low driving voltages of 36%-60% of their bandgaps, corresponding to a large apparent energy gain of 0.6-1.4 eV per emitted photon. Importantly, for various classes of LEDs with very different modes of charge injection and recombination (dark saturation current densities ranging from ~10^-35 to ~10^-21 mA/cm2), their EL intensity-voltage curves under low voltages exhibit similar behaviors, revealing a universal origin of ultralow-voltage device operation. Finally, we demonstrate as a proof-of-concept that perovskite LEDs can transmit data efficiently to a silicon detector at 1V, a voltage below the silicon bandgap. Our work provides a fresh insight into the operational limits of electroluminescent diodes, highlighting the significant potential of integrating low-voltage LEDs with silicon electronics for next-generation communications and computational applications.
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Submitted 3 August, 2021;
originally announced August 2021.
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Toplayer-Dependent Crystallographic Orientation Imaging in the Bilayer Two-Dimensional Materials with Transverse Shear Microscopy
Authors:
Sabir Hussain,
Rui Xu,
Kunqi Xu,
Le Lei,
Shuya Xing,
Jianfeng Guo,
Haoyu Dong,
Adeel Liaqat,
Rashid Iqbal,
Muhammad Ahsan Iqbal,
Shangzhi Gu,
Feiyue Cao,
Yan Jun Li,
Yasuhiro Sugawara,
Fei Pang,
Wei Ji,
Liming Xie,
Shanshan Chen,
Zhihai Cheng
Abstract:
Nanocontact properties of two-dimensional (2D) materials are closely dependent on their unique nanomechanical systems, such as the number of atomic layers and the supporting substrate. Here, we report a direct observation of toplayer-dependent crystallographic orientation imaging of 2D materials with the transverse shear microscopy (TSM). Three typical nanomechanical systems, MoS2 on the amorphous…
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Nanocontact properties of two-dimensional (2D) materials are closely dependent on their unique nanomechanical systems, such as the number of atomic layers and the supporting substrate. Here, we report a direct observation of toplayer-dependent crystallographic orientation imaging of 2D materials with the transverse shear microscopy (TSM). Three typical nanomechanical systems, MoS2 on the amorphous SiO2/Si, graphene on the amorphous SiO2/Si, and MoS2 on the crystallized Al2O3, have been investigated in detail. This experimental observation reveals that puckering behaviour mainly occurs on the top layer of 2D materials, which is attributed to its direct contact adhesion with the AFM tip. Furthermore, the result of crystallographic orientation imaging of MoS2/SiO2/Si and MoS2/Al2O3 indicated that the underlying crystalline substrates almost do not contribute to the puckering effect of 2D materials. Our work directly revealed the top layer dependent puckering properties of 2D material, and demonstrate the general applications of TSM in the bilayer 2D systems.
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Submitted 6 May, 2021;
originally announced May 2021.
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Epitaxial fabrication of AgTe monolayer on Ag(111) and the sequential growth of Te film
Authors:
Haoyu Dong,
Le Lei,
Shuya Xing,
Jianfeng Guo,
Feiyue Cao,
Shangzhi Gu,
Yanyan Geng,
Shuo Mi,
Hanxiang Wu,
Yan Jun Li,
Yasuhiro Sugawara,
Fei Pang,
Wei Ji,
Rui Xu,
Zhihai Cheng
Abstract:
Transition-metal chalcogenides (TMCs) materials have attracted increasing interest both for fundamental research and industrial applications. Among all these materials, two-dimensional (2D) compounds with honeycomb-like structure possess exotic electronic structures. Here, we report a systematic study of TMC monolayer AgTe fabricated by direct depositing Te on the surface of Ag(111) and annealing.…
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Transition-metal chalcogenides (TMCs) materials have attracted increasing interest both for fundamental research and industrial applications. Among all these materials, two-dimensional (2D) compounds with honeycomb-like structure possess exotic electronic structures. Here, we report a systematic study of TMC monolayer AgTe fabricated by direct depositing Te on the surface of Ag(111) and annealing. Few intrinsic defects are observed and studied by scanning tunneling microscopy, indicating that there are two kinds of AgTe domains and they can form gliding twin-boundary. Then, the monolayer AgTe can serve as the template for the following growth of Te film. Meanwhile, some Te atoms are observed in the form of chains on the top of the bottom Te film. Our findings in this work might provide insightful guide for the epitaxial growth of 2D materials for study of novel physical properties and for future quantum devices.
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Submitted 19 May, 2021;
originally announced May 2021.
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Band structure and Fermi surfaces of the reentrant ferromagnetic superconductor Eu(Fe0.86Ir0.14)2As2
Authors:
S. Xing,
J. Mansart,
V. Brouet,
M. Sicot,
Y. Fagot-Revurat,
B. Kierren,
P. Le Fèvre,
F. Bertran,
J. E. Rault,
U. B. Paramanik,
Z. Hossain,
A. Chainani,
D. Malterre
Abstract:
The electronic structure of the reentrant superconductor Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$ (T$_c$ = 22 K) with coexisting ferromagnetic order (T$_M$ = 18 K) is investigated using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). We study the in-plane and out-of-plane band dispersions and Fermi surface (FS) of Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As…
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The electronic structure of the reentrant superconductor Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$ (T$_c$ = 22 K) with coexisting ferromagnetic order (T$_M$ = 18 K) is investigated using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). We study the in-plane and out-of-plane band dispersions and Fermi surface (FS) of Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$. The near E$_F$ Fe 3d-derived band dispersions near the $Γ$ and X high-symmetry points show changes due to Ir substitution, but the FS topology is preserved. From momentum dependent measurements of the superconducting gap measured at T = 5 K, we estimate an essentially isotropic s-wave gap ($Δ\sim5.25\pm 0.25$ meV), indicative of strong-coupling superconductivity with 2$Δ$/k$_{B}$T$_{c}\simeq$ 5.8. The gap gets closed at temperatures T $\geq$ 10 K, and this is attributed to the resistive phase which sets in at T$_M$ = 18 K due to the Eu$^{2+}$-derived magnetic order. The modifications of the FS with Ir substitution clearly indicates an effective hole do** with respect to the parent compound.
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Submitted 18 June, 2018;
originally announced June 2018.
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Epitaxial Growth and Band Structure of Te Film on Graphene
Authors:
Xiaochun Huang,
Jiaqi Guan,
Bing Liu,
Shuya Xing,
Weihua Wang,
Jiandong Guo
Abstract:
Tellurium (Te) films with monolayer and few-layer thickness are obtained by molecular beam epitaxy on a graphene/6H-SiC(0001) substrate and investigated by in situ scanning tunneling microscopy and spectroscopy (STM/STS). We reveal that the Te films are composed of parallel-arranged helical Te chains flat-lying on the graphene surface, exposing the (1x1) facet of (10-10) of the bulk crystal. The b…
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Tellurium (Te) films with monolayer and few-layer thickness are obtained by molecular beam epitaxy on a graphene/6H-SiC(0001) substrate and investigated by in situ scanning tunneling microscopy and spectroscopy (STM/STS). We reveal that the Te films are composed of parallel-arranged helical Te chains flat-lying on the graphene surface, exposing the (1x1) facet of (10-10) of the bulk crystal. The band gap of Te films increases monotonically with decreasing thickness, reaching ~0.92 eV for the monolayer Te. An explicit band bending at the edge between the monolayer Te and graphene substrate is visualized. With the thickness controlled in atomic scale, Te films show potential applications of in electronics and optoelectronics.
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Submitted 21 March, 2017;
originally announced March 2017.
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Small and nearly isotropic hole-like Fermi surfaces in LiFeAs detected through de Haas van Alphen-effect
Authors:
B. Zeng,
D. Watanabe,
Q. R. Zhang,
G. Li,
T. Besara,
T. Siegrist L. Y. Xing,
X. C. Wang,
C. Q. **,
P. Goswami,
M. D. Johannes,
L. Balicas
Abstract:
LiFeAs is unique among the arsenic based Fe-pnictide superconductors because it is the only nearly stoichiometric compound which does not exhibit magnetic order. This is at odds with electronic structure calculations which and a very stable magnetic state and predict cylindrical hole- and electron-like Fermi surface sheets whose geometry suggests spin uctuations and a possible instability toward l…
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LiFeAs is unique among the arsenic based Fe-pnictide superconductors because it is the only nearly stoichiometric compound which does not exhibit magnetic order. This is at odds with electronic structure calculations which and a very stable magnetic state and predict cylindrical hole- and electron-like Fermi surface sheets whose geometry suggests spin uctuations and a possible instability toward long-range ordering at the nesting vector. In fact, a complex magnetic phase-diagram is indeed observed in the isostructural NaFeAs compound. Previous angle resolved photoemission (ARPES) experiments revealed the existence of both hole and electron-like surfaces, but with rather distinct cross-sectional areas and an absence of the nesting that is thought to underpin both magnetic order and superconductivity in the pnictide family of superconductors. These ARPES observations were challenged by subsequent de Haas van Alphen (dHvA) measurements which detected a few, electron like Fermi surface sheets in rough agreement with the original band calculations. Here, we show a detailed dHvA study unveiling additional, small and nearly isotropic Fermi surface sheets in LiFeAs single crystals, which ought to correspond to hole-like orbits, as previously observed by ARPES. Therefore, our results conciliate the apparent discrepancy between ARPES and the previous dHvA results5. The small size of these Fermi surface pockets suggests a prominent role for the electronic correlations in LiFeAs. The absence of gap nodes, in combination with the coexistence of quasi-two-dimensional and three-dimensional Fermi surfaces, favor a s-wave pairing symmetry for LiFeAs. But similar electron-like Fermi surfaces combined with very different hole pockets between LiFeAs and LiFeP, suggest that the nodes in the gap function of LiFeP might be located on the hole-pockets.
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Submitted 1 October, 2013;
originally announced October 2013.
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Twisted Bilayer Graphene Superlattices
Authors:
Yanan Wang,
Zhihua Su,
Wei Wu,
Shu Nie,
Nan Xie,
Huiqi Gong,
Yang Guo,
Joon Hwan Lee,
Sirui Xing,
Xiaoxiang Lu,
Haiyan Wang,
Xinghua Lu,
Kevin McCarty,
Shin- shem Pei,
Francisco Robles-Hernandez,
Viktor G. Hadjiev,
Jiming Bao
Abstract:
Twisted bilayer graphene (tBLG) provides us with a large rotational freedom to explore new physics and novel device applications, but many of its basic properties remain unresolved. Here we report the synthesis and systematic Raman study of tBLG. Chemical vapor deposition was used to synthesize hexagon- shaped tBLG with a rotation angle that can be conveniently determined by relative edge misalign…
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Twisted bilayer graphene (tBLG) provides us with a large rotational freedom to explore new physics and novel device applications, but many of its basic properties remain unresolved. Here we report the synthesis and systematic Raman study of tBLG. Chemical vapor deposition was used to synthesize hexagon- shaped tBLG with a rotation angle that can be conveniently determined by relative edge misalignment. Superlattice structures are revealed by the observation of two distinctive Raman features: folded optical phonons and enhanced intensity of the 2D-band. Both signatures are strongly correlated with G-line resonance, rotation angle and laser excitation energy. The frequency of folded phonons decreases with the increase of the rotation angle due to increasing size of the reduced Brillouin zone (rBZ) and the zone folding of transverse optic (TO) phonons to the rBZ of superlattices. The anomalous enhancement of 2D-band intensity is ascribed to the constructive quantum interference between two Raman paths enabled by a near-degenerate Dirac cone. The fabrication and Raman identification of superlattices pave the way for further basic study and new applications of tBLG.
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Submitted 18 January, 2013;
originally announced January 2013.
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Growth from Below: Bilayer Graphene on Copper by Chemical Vapor Deposition
Authors:
Shu Nie,
Wei Wu,
Shirui Xing,
Qingkai Yu,
Jiming Bao,
Shin-shem Pei,
Kevin F. McCarty
Abstract:
We evaluate how a second graphene layer forms and grows on Cu foils during chemical vapor deposition (CVD). Low-energy electron diffraction and microscopy is used to reveal that the second layer nucleates and grows next to the substrate, i.e., under a graphene layer. This underlayer mechanism can facilitate the synthesis of uniform single-layer films but presents challenges for growing uniform bil…
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We evaluate how a second graphene layer forms and grows on Cu foils during chemical vapor deposition (CVD). Low-energy electron diffraction and microscopy is used to reveal that the second layer nucleates and grows next to the substrate, i.e., under a graphene layer. This underlayer mechanism can facilitate the synthesis of uniform single-layer films but presents challenges for growing uniform bilayer films by CVD. We also show that the buried and overlying layers have the same edge termination.
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Submitted 30 August, 2012; v1 submitted 5 February, 2012;
originally announced February 2012.
