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Imaging topological polar structures in marginally twisted 2D semiconductors
Authors:
Thi-Hai-Yen Vu,
Daniel Bennett,
Gayani Nadeera Pallewella,
Md Hemayet Uddin,
Kaijian Xing,
Weiyao Zhao,
Seng Huat Lee,
Zhiqiang Mao,
Jack B. Muir,
Linnan Jia,
Jeffrey A. Davis,
Kenji Watanabe,
Takashi Taniguchi,
Shaffique Adam,
Pankaj Sharma,
Michael S. Fuhrer,
Mark T. Edmonds
Abstract:
Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves. Ferroelectricity for example, arises due to broken inversion symmetry in twisted and strained bilayers of 2D semiconductors with stacking domains of alternating out-o…
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Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves. Ferroelectricity for example, arises due to broken inversion symmetry in twisted and strained bilayers of 2D semiconductors with stacking domains of alternating out-of-plane polarization. However, understanding the individual contributions of twist and strain to the formation of topological polar nanostructures remains to be established and has proven to be experimentally challenging. Inversion symmetry breaking has been predicted to give rise to an in-plane component of polarization along the domain walls, leading to the formation of a network of topologically non-trivial merons (half-skyrmions) that are Bloch-type for twisted and Neel-type for strained systems. Here we utilise angle-resolved, high-resolution vector piezoresponse force microscopy (PFM) to spatially resolve polarization components and topological polar nanostructures in marginally twisted bilayer WSe2, and provide experimental proof for the existence of topologically non-trivial meron/antimeron structures. We observe both Bloch-type and Neel-type merons, allowing us to differentiate between moire superlattices formed due to twist or heterogeneous strain. This first demonstration of non-trivial real-space topology in a twisted van der Waals heterostructure opens pathways for exploring the connection between twist and topology in engineered nano-devices.
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Submitted 23 May, 2024;
originally announced May 2024.
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Non-Drude THz conductivity of graphene due to structural distortions
Authors:
Tan-Phat Nguyen,
Mykhailo Klymenko,
Gary Beane,
Mitko Oldfield,
Kaijian Xing,
Matthew Gebert,
Semonti Bhattacharyya,
Michael S. Fuhrer,
Jared H. Cole,
Agustin Schiffrin
Abstract:
The remarkable electrical, optical and mechanical properties of graphene make it a desirable material for electronics, optoelectronics and quantum applications. A fundamental understanding of the electrical conductivity of graphene across a wide frequency range is required for the development of such technologies. In this study, we use terahertz (THz) time-domain spectroscopy to measure the comple…
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The remarkable electrical, optical and mechanical properties of graphene make it a desirable material for electronics, optoelectronics and quantum applications. A fundamental understanding of the electrical conductivity of graphene across a wide frequency range is required for the development of such technologies. In this study, we use terahertz (THz) time-domain spectroscopy to measure the complex dynamic conductivity of electrostatically gated graphene, in a broad $\sim$0.1 - 7 THz frequency range. The conductivity of doped graphene follows the conventional Drude model, and is predominantly governed by intraband processes. In contrast, undoped charge-neutral graphene exhibits a THz conductivity that significantly deviates from Drude-type models. Via quantum kinetic equations and density matrix theory, we show that this discrepancy can be explained by additional interband processes, that can be exacerbated by electron backscattering. We propose a mechanism where such backscattering -- which involves flip** of the electron pseudo-spin -- is mediated by the substantial vector scattering potentials that are associated with structural deformations of graphene. Our findings highlight the significant impact that structural distortions and resulting electrostatic vector scattering potentials can have on the THz conductivity of charge-neutral graphene. Our results emphasise the importance of the planar morphology of graphene for its broadband THz electronic response.
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Submitted 9 October, 2023;
originally announced October 2023.
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Defects, band bending and ionization rings in MoS2
Authors:
Iolanda Di Bernardo,
James Blyth,
Liam Watson,
Kaijian Xing,
Yi-Hsun Chen,
Shao-Yu Chen,
Mark T. Edmonds,
Michael S. Fuhrer
Abstract:
Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS2 however is still controversial, with discrepancies in the literature pertaining to the origin of the in-gap features observed via scanning tunneling spectroscopy (STS) on single sulphur vacancies. Here we use a comb…
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Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS2 however is still controversial, with discrepancies in the literature pertaining to the origin of the in-gap features observed via scanning tunneling spectroscopy (STS) on single sulphur vacancies. Here we use a combination of scanning tunnelling microscopy (STM) and STS to study embedded sulphur vacancies in bulk MoS2 crystals. We observe spectroscopic features dispersing in real space and in energy, which we interpret as tip position- and bias-dependent ionization of the sulphur vacancy donor due to tip induced band bending (TIBB). The observations indicate that care must be taken in interpreting defect spectra as reflecting in-gap density of states, and may explain discrepancies in the literature.
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Submitted 18 July, 2023;
originally announced July 2023.
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P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3
Authors:
Yi-Hsun Chen,
Kaijian Xing,
Song Liu,
Luke Holtzman,
Daniel L. Creedon,
Jeffrey C. McCallum,
Kenji Watanabe,
Takashi Taniguchi,
Katayun Barmak,
James Hone,
Alexander R. Hamilton,
Shao-Yu Chen,
Michael S. Fuhrer
Abstract:
1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathemat…
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1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States 5 School of Physics, the University of Melbourne, Melbourne, VIC 3010, Australia 6 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 7 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 8 School of Physics, University of New South Wales, 2052 Sydney, Australia 9 Center of Condensed Matter Sciences and Center of Atomic Initiative for New Material, National Taiwan University, Taipei 106, Taiwan 10 Monash Centre for Atomically Thin Materials, Monash University, Clayton, 3800, VIC, Australia
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Submitted 22 June, 2022;
originally announced June 2022.
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Precise Layer-Dependent Electronic Structure of MBE-Grown PtSe$_2$
Authors:
Lei Zhang,
Tong Yang,
Muhammad Fauzi Sahdan,
Arramel,
Wenshuo Xu,
Kaijian Xing,
Yuan ** Feng,
Wen**g Zhang,
Zhuo Wang,
Andrew T. S. Wee
Abstract:
Two-dimensional (2D) platinum diselenide (PtSe$_2$) has received significant attention for 2D transistor applications due to its high mobility. Here, using molecular beam epitaxy, we investigate the growth of 2D PtSe$_2$ on highly oriented pyrolytic graphite (HOPG) and unveil their electronic properties via X-ray photoelectron spectroscopy, Raman spectra, and scanning tunnelling microscopy/spectro…
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Two-dimensional (2D) platinum diselenide (PtSe$_2$) has received significant attention for 2D transistor applications due to its high mobility. Here, using molecular beam epitaxy, we investigate the growth of 2D PtSe$_2$ on highly oriented pyrolytic graphite (HOPG) and unveil their electronic properties via X-ray photoelectron spectroscopy, Raman spectra, and scanning tunnelling microscopy/spectroscopy as well as density functional theory (DFT) calculations. PtSe$_2$ adopts a layer-by-layer growth mode on HOPG and shows a decreasing band gap with increasing layer number. For the layer numbers from one to four, PtSe$_2$ has band gaps of $2.0 \pm 0.1$, $1.1 \pm 0.1$, $0.6 \pm 0.1$ and $0.20 \pm 0.1$ eV, respectively, and becomes semimetal from the fifth layer. DFT calculations reproduce the layer-dependent evolution of both the band gap and band edges, suggest an indirect band-gap structure, and elucidate the underlying physics at the atomic level.
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Submitted 7 May, 2021;
originally announced May 2021.
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Anomalous Magnetoresistance by Breaking Ice Rule in Bi2Ir2O7/Dy2Ti2O7 Heterostructure
Authors:
H. Zhang,
C. K. Xing,
K. Noordhoek,
Z. Liu,
T. H. Zhao,
L. Horák,
Q. Huang,
L. Hao,
J. Yang,
S. Pandey,
E. Dagotto,
Z. Jiang,
J. H. Chu,
Y. Xin,
E. S. Choi,
H. D. Zhou,
J. Liu
Abstract:
While geometrically frustrated quantum magnets are known for a variety of exotic spin states that are of great interests of understanding emergent phenomena as well as enabling revolutionary quantum technologies, most of them are necessarily good insulators which are difficult to be integrated with modern electrical circuit that relies on moving charge carriers. The grand challenge of converting f…
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While geometrically frustrated quantum magnets are known for a variety of exotic spin states that are of great interests of understanding emergent phenomena as well as enabling revolutionary quantum technologies, most of them are necessarily good insulators which are difficult to be integrated with modern electrical circuit that relies on moving charge carriers. The grand challenge of converting fluctuations and excitations of frustrated moments into electronic responses is finding ways to introduce charge carriers that interact with the localized spins without destroying the spin states. Here, we show that, by designing a Bi2Ir2O7/Dy2Ti2O7 heterostructure, the breaking of the spin ice rule in insulating Dy2Ti2O7 can lead to a charge response in the Bi2Ir2O7 conducting layer that can be detected as anomalous magnetoresistance. These results demonstrate a novel and feasible interfacial approach for electronically probing exotic spin states in insulating magnets, laying out a blueprint for the metallization of frustrated quantum magnets.
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Submitted 22 December, 2021; v1 submitted 17 November, 2020;
originally announced November 2020.
