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Electrical switching of Ising-superconducting nonreciprocity for quantum neuronal transistor
Authors:
Junlin Xiong,
Jiao Xie,
Bin Cheng,
Yudi Dai,
Xinyu Cui,
Lizheng Wang,
Zenglin Liu,
Ji Zhou,
Naizhou Wang,
Xianghan Xu,
Xianhui Chen,
Sang-Wook Cheong,
Shi-Jun Liang,
Feng Miao
Abstract:
Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing electrical switching of the polarity of the nonreciprocal transport without external magnetic field is essential to the development of nonreciprocal quantum devices. However, electrical switching of superconducting nonr…
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Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing electrical switching of the polarity of the nonreciprocal transport without external magnetic field is essential to the development of nonreciprocal quantum devices. However, electrical switching of superconducting nonreciprocity remains yet to be achieved. Here, we report the observation of field-free electrical switching of nonreciprocal Ising superconductivity in Fe3GeTe2/NbSe2 van der Waals (vdW) heterostructure. By taking advantage of this electrically switchable superconducting nonreciprocity, we demonstrate a proof-of-concept nonreciprocal quantum neuronal transistor, which allows for implementing the XOR logic gate and faithfully emulating biological functionality of a cortical neuron in the brain. Our work provides a promising pathway to realize field-free and electrically switchable nonreciprocity of quantum transport and demonstrate its potential in exploring neuromorphic quantum devices with both functionality and performance beyond the traditional devices.
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Submitted 20 June, 2024;
originally announced June 2024.
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Intrinsic second-order topological insulators in two-dimensional polymorphic graphyne with sublattice approximation
Authors:
Z. J. Chen,
S. G. Xu,
Z. J. Xie,
H. Xu,
H. M. Weng
Abstract:
In two dimensions, intrinsic second-order topological insulators (SOTIs) are characterized by topological corner states that emerge at the intersections of distinct edges with reversed mass signs, enforced by spatial symmetries. Here, we present a comprehensive investigation within the class BDI to clarify the symmetry conditions ensuring the presence of intrinsic SOTIs in two dimensions. We revea…
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In two dimensions, intrinsic second-order topological insulators (SOTIs) are characterized by topological corner states that emerge at the intersections of distinct edges with reversed mass signs, enforced by spatial symmetries. Here, we present a comprehensive investigation within the class BDI to clarify the symmetry conditions ensuring the presence of intrinsic SOTIs in two dimensions. We reveal that the (anti-)commutation relationship between spatial symmetries and chiral symmetry is a reliable indicator of intrinsic corner states. Through first-principles calculations, we identify several ideal candidates within carbon-based polymorphic graphyne structures for realizing intrinsic SOTIs under sublattice approximation. Furthermore, we show that the corner states in these materials persist even in the absence of sublattice approximation. Our findings not only deepen the understanding of higher-order topological phases but also open new pathways for realizing topological corner states that are readily observable.
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Submitted 20 June, 2024; v1 submitted 9 June, 2024;
originally announced June 2024.
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Even- and Odd-denominator Fractional Quantum Anomalous Hall Effect in Graphene Moire Superlattices
Authors:
Jian Xie,
Zihao Huo,
Xin Lu,
Zuo Feng,
Zaizhe Zhang,
Wenxuan Wang,
Qiu Yang,
Kenji Watanabe,
Takashi Taniguchi,
Kaihui Liu,
Zhida Song,
X. C. Xie,
Jianpeng Liu,
Xiaobo Lu
Abstract:
Fractional quantum anomalous hall effect (FQAHE), a transport effect with fractionally quantized Hall plateau emerging under zero magnetic field, provides a radically new opportunity to engineer topological quantum electronics. By construction of topological flat band with moire engineering, intrinsic FQAHE has been observed in twisted MoTe2 system and rhombohedral pentalayer graphene/hBN moire su…
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Fractional quantum anomalous hall effect (FQAHE), a transport effect with fractionally quantized Hall plateau emerging under zero magnetic field, provides a radically new opportunity to engineer topological quantum electronics. By construction of topological flat band with moire engineering, intrinsic FQAHE has been observed in twisted MoTe2 system and rhombohedral pentalayer graphene/hBN moire superlattices with anomalous Hall resistivity quantization number C <= 2/3 including the gapless composite Fermi-liquid state with C = 1/2. Here we experimentally demonstrate a new system of rhombohedral hexalayer graphene (RHG)/hBN moire superlattices showing both fractional and integer quantum anomalous Hall effects when the lowest flat Chern band is fractionally and fully filled at zero magnetic field. The zero-field Hall resistance Rho_xy = h/Ce2 is quantized to values corresponding to C = 3/5, 2/3, 5/7, 3/4, 7/9 and 1 at moire filling factors v = 3/5, 2/3, 5/7, 3/4, 7/9 and 1, respectively. Particularly, the C = 3/4 FQAHE state at v = 3/4 moire filling featuring a minimum of longitudinal resistance Rho_xx and fractionally quantized Hall resistance Rho_xy = 4h/3e2, is observed for the first time under zero magnetic field. Such a state may be similar to the C = 3/4 fractional quantum hall (FQHE) state recently observed at high magnetic fields9,10 and possibly host fractional charge excitations obeying non-Abelian statistics. By tuning the electrical and magnetic fields at 0 < v < 1, we have observed a sign reversal of the Hall resistivity for v = 2/3 state, indicating a transition from quasi-electron-like excitations to quasi-hole ones. Our experiment has established RHG/hBN moire superlattices a promising platform to explore quasi-particles with fractional charge excitations and non-Abelian anyons at zero magnetic field.
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Submitted 27 May, 2024;
originally announced May 2024.
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Large Fermi surface in pristine kagome metal CsV$_3$Sb$_5$ and enhanced quasiparticle effective masses
Authors:
Wei Zhang,
Tsz Fung Poon,
Chun Wai Tsang,
Wenyan Wang,
X. Liu,
J. Xie,
S. T. Lam,
Shanmin Wang,
Kwing To Lai,
A. Pourret,
G. Seyfarth,
G. Knebel,
Wing Chi Yu,
Swee K. Goh
Abstract:
The kagome metal CsV$_3$Sb$_5$ is an ideal platform to study the interplay between topology and electron correlation. To understand the fermiology of CsV$_3$Sb$_5$, intensive quantum oscillation (QO) studies at ambient pressure have been conducted. However, due to the Fermi surface reconstruction by the complicated charge density wave (CDW) order, the QO spectrum is exceedingly complex, hindering…
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The kagome metal CsV$_3$Sb$_5$ is an ideal platform to study the interplay between topology and electron correlation. To understand the fermiology of CsV$_3$Sb$_5$, intensive quantum oscillation (QO) studies at ambient pressure have been conducted. However, due to the Fermi surface reconstruction by the complicated charge density wave (CDW) order, the QO spectrum is exceedingly complex, hindering a complete understanding of the fermiology. Here, we directly map the Fermi surface of the pristine CsV$_3$Sb$_5$ by measuring Shubnikov-de Haas QOs up to 29 T under pressure, where the CDW order is completely suppressed. The QO spectrum of the pristine CsV$_3$Sb$_5$ is significantly simpler than the one in the CDW phase, and the detected oscillation frequencies agree well with our density functional theory calculations. In particular, a frequency as large as 8,200 T is detected. Pressure-dependent QO studies further reveal a weak but noticeable enhancement of the quasiparticle effective masses on approaching the critical pressure where the CDW order disappears, hinting at the presence of quantum fluctuations. Our high-pressure QO results reveal the large, unreconstructed Fermi surface of CsV$_3$Sb$_5$, paving the way to understanding the parent state of this intriguing metal in which the electrons can be organized into different ordered states.
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Submitted 17 May, 2024;
originally announced May 2024.
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Necessity of orthogonal basis vectors for the two-anyon problem in one-dimensional lattice
Authors:
Cuicui Zheng,
Jiahui Xie,
Ming Zhang,
Yajiang Chen,
Yunbo Zhang
Abstract:
Few-body physics for anyons has been intensively studied within the anyon-Hubbard model, including the quantum walk and Bloch oscillations of two-anyon states. However, the known theoretical proposal and experimental simulations of two-anyon states in one-dimensional lattice have been carried out by expanding the wavefunction in terms of non-orthogonal basis vectors, which introduces extra non-phy…
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Few-body physics for anyons has been intensively studied within the anyon-Hubbard model, including the quantum walk and Bloch oscillations of two-anyon states. However, the known theoretical proposal and experimental simulations of two-anyon states in one-dimensional lattice have been carried out by expanding the wavefunction in terms of non-orthogonal basis vectors, which introduces extra non-physical degrees of freedom. In the present work, we deduce the finite difference equations for the two-anyon state in the one-dimensional lattice by solving the Schrödinger equation with orthogonal basis vectors. Such an orthogonal scheme gives all the orthogonal physical eigenstates for the time-independent two-anyon Schrödinger equation, while the conventional (non-orthogonal) method produces a lot of non-physical redundant eigen-solutions whose components violate the anyonic relations. The dynamical property of the two-anyon states in a sufficiently large lattice has been investigated and compared in both the orthogonal and conventional schemes, which proves to depend crucially on the initial states. When the initial states with two anyons on the same site or (next-)neighboring sites are suitably chosen to be in accordance with the anyonic coefficient relation, we observe exactly the same dynamical behavior in the two schemes, including the revival probability, the probability density function, and the two-body correlation, otherwise, the conventional scheme will produce erroneous results which not any more describe anyons. The period of the Bloch oscillation in the pseudo-fermionic limit is found to be twice that in the bosonic limit, while the oscillations disappear for statistical parameters in between. Our findings are vital for quantum simulations of few-body physics with anyons in the lattice.
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Submitted 12 May, 2024;
originally announced May 2024.
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Towards resolving bedload flux variability
Authors:
Thomas Pähtz,
Yulan Chen,
Jiafeng Xie,
Rémi Monthiller,
Raphaël Maurin,
Katharina Tholen,
Yen-Cheng Lin,
Hao-Che Ho,
Peng Hu,
Zhiguo He,
Orencio Durán
Abstract:
Bedload transport occurs when a bed composed of sedimentary grains becomes mobile in response to the shearing by a flow of liquid. It shapes the landscapes of Earth and other planetary bodies by promoting the formation and growth of various multiscale geological features. Estimating the rate at which such processes take place requires accurate bedload flux predictions. However, even for highly ide…
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Bedload transport occurs when a bed composed of sedimentary grains becomes mobile in response to the shearing by a flow of liquid. It shapes the landscapes of Earth and other planetary bodies by promoting the formation and growth of various multiscale geological features. Estimating the rate at which such processes take place requires accurate bedload flux predictions. However, even for highly idealized conditions in the laboratory, study-to-study variability of reported bedload flux measurements borders an order of magnitude. This uncertainty stems from physically poorly supported, typically empirical methods of determining the transport-driving bed shear stress, especially for very narrow or shallow channel flows, and from study-to-study grain shape variations. Here, we derive a non-empirical method of bed shear stress determination and apply it to a number of independent grain-shape-controlled data sets, based on well-controlled experiments and CFD-DEM simulations, for a very diverse range of transport conditions. An existing physical bedload model, here generalized to account for grain shape variability, predicts almost all these data within a factor of 1.3, whereas a prominent alternative model (Deal et al., Nature 613, 298-302, 2023) seems falsified.
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Submitted 11 April, 2024;
originally announced April 2024.
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Quantitatively predicting angle-resolved polarized Raman intensity of black phosphorus flakes
Authors:
Tao Liu,
Jia-Liang Xie,
Yu-Chen Leng,
Heng Wu,
Jiahong Wang,
Yang Li,
Xue-Feng Yu,
Miao-Ling Lin,
**-Heng Tan
Abstract:
In-plane anisotropic layered materials (ALMs), such as black phosphorus (BP), exhibit unique angle-resolved polarized Raman (ARPR) spectroscopy characteristics, as attributed to birefringence, linear dichroism and complex Raman tensor. Moreover, the ARPR intensity profiles of BP flakes deposited on multilayer dielectrics are notably sensitive to their thickness, owing to interference effects. The…
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In-plane anisotropic layered materials (ALMs), such as black phosphorus (BP), exhibit unique angle-resolved polarized Raman (ARPR) spectroscopy characteristics, as attributed to birefringence, linear dichroism and complex Raman tensor. Moreover, the ARPR intensity profiles of BP flakes deposited on multilayer dielectrics are notably sensitive to their thickness, owing to interference effects. The intricate anisotropic effects present challenges in accurately predicting the ARPR intensity of BP flakes. In this study, we propose a comprehensive strategy for predicting the ARPR intensity of BP flakes by explicitly considering optical anisotropy, encompassing birefringence, linear dichroism, and anisotropic cavity interference effects within multilayered structures. Through this approach, we have identified the intrinsic complex Raman tensors for phonon modes, independent of the BP flake thickness. By leveraging this methodology, we have elucidated the flake thickness-dependent effective complex Raman tensor elements, allowing for precise prediction of the observed ARPR intensity profile for the BP flake. This work provides a profound understanding of ARPR behaviors for ALM flakes.
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Submitted 24 March, 2024;
originally announced March 2024.
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Ultra-Long Homochiral Graphene Nanoribbons Grown Within h-BN Stacks for High-Performance Electronics
Authors:
Bosai Lyu,
Jiajun Chen,
Sen Wang,
Shuo Lou,
Peiyue Shen,
**gxu Xie,
Lu Qiu,
Izaac Mitchell,
Can Li,
Cheng Hu,
Xianliang Zhou,
Kenji Watanabe,
Takashi Taniguchi,
Xiaoqun Wang,
**feng Jia,
Qi Liang,
Guorui Chen,
Tingxin Li,
Shiyong Wang,
Wengen Ouyang,
Oded Hod,
Feng Ding,
Michael Urbakh,
Zhiwen Shi
Abstract:
Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination, and unsca…
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Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination, and unscalable. Here, we report on the transfer-free direct growth of high-quality graphene nanoribbons (GNRs) within h-BN stacks. The as-grown embedded GNRs exhibit highly desirable features being ultralong (up to 0.25 mm), ultranarrow ( < 5 nm), and homochiral with zigzag edges. Our atomistic simulations reveal that the mechanism underlying the embedded growth involves ultralow GNR friction when sliding between AA'-stacked h-BN layers. Using the grown structures, we demonstrate the transfer-free fabrication of embedded GNR field-effect devices that exhibit excellent performance at room temperature with mobilities of up to 4,600 $cm^{2} V^{-1} s^{-1}$ and on-off ratios of up to $10^{6}$. This paves the way to the bottom-up fabrication of high-performance electronic devices based on embedded layered materials.
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Submitted 18 March, 2024;
originally announced March 2024.
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Low Resistance Ohmic Contact to P-type Monolayer WSe2
Authors:
**gxu Xie,
Zuocheng Zhang,
Haodong Zhang,
Vikram Nagarajan,
Wenyu Zhao,
Haleem Kim,
Collin Sanborn,
Ruishi Qi,
Sudi Chen,
Salman Kahn,
Kenji Watanabe,
Takashi Taniguchi,
Alex Zettl,
Michael Crommie,
James Analytis,
Feng Wang
Abstract:
Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic devices at the nanometer scale with lower heat dissipation. One challenge for achieving high-performance 2D semiconductor field effect transistors (FET), espec…
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Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic devices at the nanometer scale with lower heat dissipation. One challenge for achieving high-performance 2D semiconductor field effect transistors (FET), especially for p-type materials, is the high electrical contact resistance present at the metal-semiconductor interface. In conventional bulk semiconductors, low resistance ohmic contact is realized through heavy substitutional do** with acceptor or donor impurities at the contact region. The strategy of substitutional do**, however, does not work for p-type 2D semiconductors such as monolayer tungsten diselenide (WSe$_2$).In this study, we developed highly efficient charge-transfer do** with WSe$_2$/$α$-RuCl$_3$ heterostructures to achieve low-resistance ohmic contact for p-type WSe$_2$ transistors. We show that a hole do** as high as 3$\times$10$^{13}$ cm$^{-2}$ can be achieved in the WSe$_2/α$-RuCl$_3$ heterostructure due to its type-III band alignment. It results in an Ohmic contact with resistance lower than 4 k Ohm $μ$m at the p-type monolayer WSe$_2$/metal junction. at room temperature. Using this low-resistance contact, we demonstrate high-performance p-type WSe$_2$ transistors with a saturation current of 35 $μ$A$\cdot$ $μ$m$^{-1}$ and an I$_{ON}$/I$_{OFF}$ ratio exceeding 10$^9$ It could enable future microelectronic devices based on 2D semiconductors and contribute to the extension of Moore's law.
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Submitted 8 December, 2023;
originally announced December 2023.
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Electrically controlled interlayer trion fluid in electron-hole bilayers
Authors:
Ruishi Qi,
Qize Li,
Zuocheng Zhang,
Sudi Chen,
**gxu Xie,
Yunbo Ou,
Zhiyuan Cui,
David D. Dai,
Andrew Y. Joe,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Liang Fu,
Feng Wang
Abstract:
The combination of repulsive and attractive Coulomb interactions in a quantum electron(e)-hole(h) fluid can give rise to novel correlated phases of multiparticle charge complexes such as excitons, trions and biexcitons. Here we report the first experimental realization of an electrically controlled interlayer trion fluid in two-dimensional van der Waals heterostructures. We demonstrate that in the…
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The combination of repulsive and attractive Coulomb interactions in a quantum electron(e)-hole(h) fluid can give rise to novel correlated phases of multiparticle charge complexes such as excitons, trions and biexcitons. Here we report the first experimental realization of an electrically controlled interlayer trion fluid in two-dimensional van der Waals heterostructures. We demonstrate that in the strong coupling regime of electron-hole bilayers, electrons and holes in separate layers can spontaneously form three-particle trion bound states that resemble positronium ions in high energy physics. The interlayer trions can assume 1e-2h and 2e-1h configurations, where electrons and holes are confined in different transition metal dichalcogenide layers. We show that the two correlated holes in 1e-2h trions form a spin-singlet state with a spin gap of ~1meV. By electrostatic gating, the equilibrium state of our system can be continuously tuned into an exciton fluid, a trion fluid, an exciton-trion mixture, a trion-charge mixture or an electron-hole plasma. Upon optical excitation, the system can host novel high-order multiparticle charge complexes including interlayer four-particle complex (tetrons) and five-particle complex (pentons). Our work demonstrates a unique platform to study novel correlated phases of tunable Bose-Fermi mixtures and opens up new opportunities to realize artificial ions/molecules in electronic devices.
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Submitted 5 December, 2023;
originally announced December 2023.
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Non-Hermitian topological wall modes in rotating Rayleigh-Benard convection
Authors:
Furu Zhang,
**-Han Xie
Abstract:
We show that the rotating Rayleigh-Benard convection, where a rotating fluid is heated from below, exhibits non-Hermitian topological states. Recently, Favier and Knobloch (JFM 2020) hypothesized that the robust wall modes in rapidly rotating convection are topologically protected. We study the linear problem around the conduction profile, and by considering a Berry curvature defined in the comple…
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We show that the rotating Rayleigh-Benard convection, where a rotating fluid is heated from below, exhibits non-Hermitian topological states. Recently, Favier and Knobloch (JFM 2020) hypothesized that the robust wall modes in rapidly rotating convection are topologically protected. We study the linear problem around the conduction profile, and by considering a Berry curvature defined in the complex wavenumber space, particularly, by introducing a complex vertical wavenumber, we find that these modes can be characterized by a non-zero integer Chern number, indicating their topological nature. The eigenvalue problem is intrinsically non-Hermitian, therefore the definition of Berry curvature generalizes that of the stably stratified problem. Moreover, the three-dimensional setup naturally regularizes the eigenvector at the infinite horizontal wavenumber. Under the hydrostatic approximation, it recovers a two-dimensional analogue of the one which explains the topological origin of the equatorial Kelvin and Yanai waves. The existence of the tenacious wall modes relies only on rotation when the fluid is stratified, no matter whether it is stable or unstable. However, the neutrally stratified system does not support a topological edge state. In addition, we define a winding number to visualize the topological nature of the fluid.
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Submitted 13 November, 2023;
originally announced November 2023.
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Tunable non-Lifshitz-Kosevich temperature dependence of Shubnikov-de Haas oscillation amplitudes in SmSb
Authors:
Wei Zhang,
C. N. Kuo,
S. T. Kuo,
Chun Wa So,
Jianyu Xie,
Kwing To Lai,
Wing Chi Yu,
C. S. Lue,
Hoi Chun Po,
Swee K. Goh
Abstract:
The Lifshitz-Kosevich (LK) theory is the pillar of magnetic quantum oscillations, which have been extensively applied to characterize a wide range of metallic states. In this study, we focus on the Shubnikov-de Haas (SdH) effect observed in SmSb, a rare-earth monopnictide. We observed a significant departure from the expected LK theory near $T_N=2.4$~K: both a peak-like anomaly and an enhancement…
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The Lifshitz-Kosevich (LK) theory is the pillar of magnetic quantum oscillations, which have been extensively applied to characterize a wide range of metallic states. In this study, we focus on the Shubnikov-de Haas (SdH) effect observed in SmSb, a rare-earth monopnictide. We observed a significant departure from the expected LK theory near $T_N=2.4$~K: both a peak-like anomaly and an enhancement in the temperature dependence of quantum oscillation amplitude are seen in SmSb. Moreover, we discovered a remarkable sensitivity of the SdH amplitudes to sample purity. By adjusting the sample purity, we were able to tune the temperature dependence of the $α$ band's SdH amplitudes from a peak-like anomalous behavior to an enhancement. Therefore, SdH oscillations from the $α$ band connect the two well-known non-LK behaviours, controllable through varying the sample purity, paving the way for develo** further understanding of the mechanism leading to the anomalous quantum oscillations.
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Submitted 10 October, 2023;
originally announced October 2023.
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Perfect Coulomb drag and exciton transport in an excitonic insulator
Authors:
Ruishi Qi,
Andrew Y. Joe,
Zuocheng Zhang,
**gxu Xie,
Qixin Feng,
Zheyu Lu,
Ziyu Wang,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Feng Wang
Abstract:
Strongly coupled two-dimensional electron-hole bilayers can give rise to novel quantum Bosonic states: electrons and holes in electrically isolated layers can pair into interlayer excitons, which can form a Bose-Einstein condensate below a critical temperature at zero magnetic field. This state is predicted to feature perfect Coulomb drag, where a current in one layer must be accompanied by an equ…
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Strongly coupled two-dimensional electron-hole bilayers can give rise to novel quantum Bosonic states: electrons and holes in electrically isolated layers can pair into interlayer excitons, which can form a Bose-Einstein condensate below a critical temperature at zero magnetic field. This state is predicted to feature perfect Coulomb drag, where a current in one layer must be accompanied by an equal but opposite current in the other, and counterflow superconductivity, where the excitons form a superfluid with zero viscosity. Electron-hole bilayers in the strong coupling limit with an excitonic insulator ground state have been recently achieved in semiconducting transition metal dichalcogenide heterostructures, but direct electrical transport measurements remain challenging. Here we use a novel optical spectroscopy to probe the electrical transport of correlated electron-hole fluids in MoSe2/hBN/WSe2 heterostructures. We observe perfect Coulomb drag in the excitonic insulator phase up to a temperature as high as ~15K. Strongly correlated electron and hole transport is also observed at unbalanced electron and hole densities, although the Coulomb drag is not perfect anymore. Meanwhile, the counterflow resistance of interlayer excitons remains finite. These results indicate the formation of an exciton gas in the excitonic insulator which does not condensate into a superfluid at low temperature. Our work also demonstrates that dynamic optical spectroscopy provides a powerful tool for probing novel exciton transport behavior and possible exciton superfluidity in correlated quantum electron-hole fluids.
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Submitted 26 September, 2023;
originally announced September 2023.
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Exceptional nexus in Bose-Einstein condensates with collective dissipation
Authors:
Chenhao Wang,
Nan Li,
** Xie,
Cong Ding,
Zhonghua Ji,
Liantuan Xiao,
Suotang Jia,
Ying Hu,
Yanting Zhao
Abstract:
In multistate non-Hermitian systems, higher-order exceptional points and exotic phenomena with no analogues in two-level systems arise. A paradigm is the exceptional nexus (EX), a third-order EP as the cusp singularity of exceptional arcs (EAs), that has a hybrid topological nature. Using atomic Bose-Einstein condensates to implement a dissipative three-state system, we experimentally realize an E…
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In multistate non-Hermitian systems, higher-order exceptional points and exotic phenomena with no analogues in two-level systems arise. A paradigm is the exceptional nexus (EX), a third-order EP as the cusp singularity of exceptional arcs (EAs), that has a hybrid topological nature. Using atomic Bose-Einstein condensates to implement a dissipative three-state system, we experimentally realize an EX within a two-parameter space, despite the absence of symmetry. The engineered dissipation exhibits density dependence due to the collective atomic response to resonant light. Based on extensive analysis of the system's decay dynamics, we demonstrate the formation of an EX from the coalescence of two EAs with distinct geometries. These structures arise from the different roles played by dissipation in the strong coupling limit and quantum Zeno regime. Our work paves the way for exploring higher-order exceptional physics in the many-body setting of ultracold atoms.
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Submitted 20 June, 2024; v1 submitted 18 September, 2023;
originally announced September 2023.
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Weakly supervised learning for pattern classification in serial femtosecond crystallography
Authors:
Jianan Xie,
Ji Liu,
Chi Zhang,
Xihui Chen,
** Huai,
Jie Zheng,
Xiaofeng Zhang
Abstract:
Serial femtosecond crystallography at X-ray free electron laser facilities opens a new era for the determination of crystal structure. However, the data processing of those experiments is facing unprecedented challenge, because the total number of diffraction patterns needed to determinate a high-resolution structure is huge. Machine learning methods are very likely to play important roles in deal…
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Serial femtosecond crystallography at X-ray free electron laser facilities opens a new era for the determination of crystal structure. However, the data processing of those experiments is facing unprecedented challenge, because the total number of diffraction patterns needed to determinate a high-resolution structure is huge. Machine learning methods are very likely to play important roles in dealing with such a large volume of data. Convolutional neural networks have made a great success in the field of pattern classification, however, training of the networks need very large datasets with labels. Th is heavy dependence on labeled datasets will seriously restrict the application of networks, because it is very costly to annotate a large number of diffraction patterns. In this article we present our job on the classification of diffraction pattern by weakly supervised algorithms, with the aim of reducing as much as possible the size of the labeled dataset required for training. Our result shows that weakly supervised methods can significantly reduce the need for the number of labeled patterns while achieving comparable accuracy to fully supervised methods.
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Submitted 21 September, 2023; v1 submitted 30 July, 2023;
originally announced September 2023.
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Quantum Transport on the Surfaces of Topological Nodal-line Semimetals
Authors:
Jun-Jie Fu,
Shu-Tong Guan,
Jiao Xie,
** An
Abstract:
Topological nodal-line semimetals are always characterized by the drumhead surface states at the open boundaries. In this paper we first derive an analytical expression for the surface Green's function of a nodal-line semimetal. By making use of this result, we explore the charge and spin transport properties of a metallic chain on the surface of a nodal-line semimetal, as functions of the gate vo…
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Topological nodal-line semimetals are always characterized by the drumhead surface states at the open boundaries. In this paper we first derive an analytical expression for the surface Green's function of a nodal-line semimetal. By making use of this result, we explore the charge and spin transport properties of a metallic chain on the surface of a nodal-line semimetal, as functions of the gate voltage applied on the top of the material. According to the size of the nodal loop, due to the coupling to the surface modes, the charge conductance in the chain is found to show a robust plateau at $e^{2}/h$, or to exhibit multiple valleys at $e^{2}/h$. Correspondingly, the spin polarization of the transmitted current is $100\%$ at the plateau region, or exhibits multiple peaks at nearly $100\%$. This feature can be viewed as a transport signature of the topological nodal-line semimetals.
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Submitted 7 September, 2023;
originally announced September 2023.
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Thermodynamic behavior of correlated electron-hole fluids in van der Waals heterostructures
Authors:
Ruishi Qi,
Andrew Y. Joe,
Zuocheng Zhang,
Yongxin Zeng,
Tiancheng Zheng,
Qixin Feng,
Emma Regan,
**gxu Xie,
Zheyu Lu,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Michael F. Crommie,
Allan H. MacDonald,
Feng Wang
Abstract:
Coupled two-dimensional electron-hole bilayers provide a unique platform to study strongly correlated Bose-Fermi mixtures in condensed matter. Electrons and holes in spatially separated layers can bind to form interlayer excitons, composite Bosons expected to support high-temperature exciton superfluids. The interlayer excitons can also interact strongly with excess charge carriers when electron a…
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Coupled two-dimensional electron-hole bilayers provide a unique platform to study strongly correlated Bose-Fermi mixtures in condensed matter. Electrons and holes in spatially separated layers can bind to form interlayer excitons, composite Bosons expected to support high-temperature exciton superfluids. The interlayer excitons can also interact strongly with excess charge carriers when electron and hole densities are unequal. Here, we use optical spectroscopy to quantitatively probe the local thermodynamic properties of strongly correlated electron-hole fluids in MoSe2/hBN/WSe2 heterostructures. We observe a discontinuity in the electron and hole chemical potentials at matched electron and hole densities, a definitive signature of an excitonic insulator ground state. The excitonic insulator is stable up to a Mott density of ~$0.8\times {10}^{12} \mathrm{cm}^{-2}$ and has a thermal ionization temperature of ~70 K. The density dependence of the electron, hole, and exciton chemical potentials reveals strong correlation effects across the phase diagram. Compared with a non-interacting uniform charge distribution, the correlation effects lead to significant attractive exciton-exciton and exciton-charge interactions in the electron-hole fluid. Our work highlights the unique quantum behavior that can emerge in strongly correlated electron-hole systems.
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Submitted 22 June, 2023;
originally announced June 2023.
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Similarities and Differences in the Fermiology of Kagome Metals AV$_{3}$Sb$_{5}$ (A=K, Rb, Cs) Revealed by Shubnikov-de Haas Oscillations
Authors:
Zheyu Wang,
Wei Zhang,
Lingfei Wang,
Tsz Fung Poon,
Chun Wai Tsang,
Wenyan Wang,
Jianyu Xie,
Xuefeng Zhou,
Yusheng Zhao,
Shanmin Wang,
Ming-zhong Ai,
Kwing To Lai,
Swee K. Goh
Abstract:
Materials with AV$_3$Sb$_5$ (A=K, Rb, Cs) stoichiometry are recently discovered kagome superconductors with the electronic structure featuring a Dirac band, van Hove singularities and flat bands. These systems undergo anomalous charge-density-wave (CDW) transitions at $T_{\rm CDW}$~80-100 K, resulting in the reconstruction of the Fermi surface from the pristine phase. Although comprehensive invest…
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Materials with AV$_3$Sb$_5$ (A=K, Rb, Cs) stoichiometry are recently discovered kagome superconductors with the electronic structure featuring a Dirac band, van Hove singularities and flat bands. These systems undergo anomalous charge-density-wave (CDW) transitions at $T_{\rm CDW}$~80-100 K, resulting in the reconstruction of the Fermi surface from the pristine phase. Although comprehensive investigations of the electronic structure via quantum oscillations (QOs) have been performed on the sister compounds CsV$_3$Sb$_5$ and RbV$_3$Sb$_5$, a detailed QO study of KV$_3$Sb$_5$ is so far absent. Here, we report the Shubnikov-de Haas QO study in KV$_3$Sb$_5$. We resolve a large number of new frequencies with the highest frequency of 2202 T (occupying ~54% of the Brillouin zone area in the $k_x$-$k_y$ plane). The Lifshitz-Kosevich analysis further gives relatively small cyclotron effective masses, and the angular dependence study reveals the two-dimensional nature of the frequencies with a sufficient signal-to-noise ratio. Finally, we compare the QO spectra for all three AV$_3$Sb$_5$ compounds collected under the same conditions, enabling us to point out the similarities and differences across these systems. Our results fill in the gap of the QO study in KV$_3$Sb$_5$ and provide valuable data to understand the band structure of all three members of AV$_3$Sb$_5$.
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Submitted 3 April, 2023;
originally announced April 2023.
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Magnon bundle in a strongly dissipative magnet
Authors:
H. Y. Yuan,
Jikun Xie,
Rembert A. Duine
Abstract:
Hybrid quantum systems based on magnetic platforms have witnessed the birth and fast development of quantum spintronics. Until now, most of the studies rely on magnetic excitations in low-dam** magnetic insulators, particularly yttrium iron garnet, while a large class of magnetic systems is ruled out in this interdisciplinary field. Here we propose the generation of a magnon bundle in a hybrid m…
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Hybrid quantum systems based on magnetic platforms have witnessed the birth and fast development of quantum spintronics. Until now, most of the studies rely on magnetic excitations in low-dam** magnetic insulators, particularly yttrium iron garnet, while a large class of magnetic systems is ruled out in this interdisciplinary field. Here we propose the generation of a magnon bundle in a hybrid magnet-qubit system, where two or more magnons are emitted simultaneously. By tuning the driving frequency of qubit to match the detuning between magnon and qubit mode, one can effectively generate a magnon bundle via super-Rabi oscillations. In contrast with general wisdom, magnetic dissipation plays an enabling role in generating the magnon bundle, where the relaxation time of magnons determines the typical time delay between two successive magnons. The maximal dam** that allows an antibunched magnon bundle can reach the order of 0.1, which may break the monopoly of low-dissipation magnetic insulators in quantum spintronics and enables a large class of magnetic materials for quantum manipulation. Further, our finding may provide a scalable and generic platform to study multi-magnon physics and benefit the design of magnonic networks for quantum information processing.
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Submitted 22 January, 2023;
originally announced January 2023.
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Nodeless superconductivity in kagome metal CsV$_{3}$Sb$_{5}$ with and without time reversal symmetry breaking
Authors:
Wei Zhang,
Xinyou Liu,
Lingfei Wang,
Chun Wai Tsang,
Zheyu Wang,
Siu Tung Lam,
Wenyan Wang,
Jianyu Xie,
Xuefeng Zhou,
Yusheng Zhao,
Shanmin Wang,
Jeff Tallon,
Kwing To Lai,
Swee K. Goh
Abstract:
The kagome metal CsV$_{3}$Sb$_{5}$ features an unusual competition between the charge-density-wave (CDW) order and superconductivity. Evidence for time-reversal symmetry breaking (TRSB) inside the CDW phase has been accumulating. Hence, the superconductivity in CsV$_{3}$Sb$_{5}$ emerges from a TRSB normal state, potentially resulting in an exotic superconducting state. To reveal the pairing symmet…
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The kagome metal CsV$_{3}$Sb$_{5}$ features an unusual competition between the charge-density-wave (CDW) order and superconductivity. Evidence for time-reversal symmetry breaking (TRSB) inside the CDW phase has been accumulating. Hence, the superconductivity in CsV$_{3}$Sb$_{5}$ emerges from a TRSB normal state, potentially resulting in an exotic superconducting state. To reveal the pairing symmetry, we first investigate the effect of nonmagnetic impurity. Our results show that the superconducting critical temperature is insensitive to disorder, pointing to conventional $s$-wave superconductivity. Moreover, our measurements of the self-field critical current ($I_{c,sf}$), which is related to the London penetration depth, also confirm conventional $s$-wave superconductivity with strong coupling. Finally, we measure $I_{c,sf}$ where the CDW order is removed by pressure and superconductivity emerges from the pristine normal state. Our results show that $s$-wave gap symmetry is retained, providing strong evidence for the presence of conventional $s$-wave superconductivity in CsV$_{3}$Sb$_{5}$ irrespective of the presence of the TRSB
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Submitted 18 January, 2023;
originally announced January 2023.
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Spectroscopy Study on NV Sensors in Diamond-based High-pressure Devices
Authors:
Kin On Ho,
Man Yin Leung,
Wenyan Wang,
Jianyu Xie,
King Yau Yip,
Jiahao Wu,
Swee K. Goh,
Andrej Denisenko,
Jörg Wrachtrup,
Sen Yang
Abstract:
Recently, the negatively charged nitrogen-vacancy (NV) center has emerged as a robust and versatile quantum sensor in pressurized environments. There are two popular ways to implement NV sensing in a diamond anvil cell (DAC), which is a conventional workhorse in the high-pressure community: create implanted NV centers (INVs) at the diamond anvil tip or immerse NV-enriched nano-diamonds (NDs) in th…
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Recently, the negatively charged nitrogen-vacancy (NV) center has emerged as a robust and versatile quantum sensor in pressurized environments. There are two popular ways to implement NV sensing in a diamond anvil cell (DAC), which is a conventional workhorse in the high-pressure community: create implanted NV centers (INVs) at the diamond anvil tip or immerse NV-enriched nano-diamonds (NDs) in the pressure medium. Nonetheless, there are limited studies on comparing the local stress environments experienced by these sensor types as well as their performances as pressure gauges. In this work, by probing the NV energy levels with the optically detected magnetic resonance (ODMR) method, we experimentally reveal a dramatic difference in the partially reconstructed stress tensors of INVs and NDs incorporated in the same DAC. Our measurement results agree with computational simulations, concluding that INVs perceive a more non-hydrostatic environment dominated by a uniaxial stress along the DAC axis. This provides insights on the suitable choice of NV sensors for specific purposes and the stress distribution in a DAC. We further propose some possible methods, such as using NDs and nanopillars, to extend the maximum working pressure of quantum sensing based on ODMR spectroscopy, since the maximum working pressure could be restricted by non-hydrostaticity of the pressure environment. Moreover, we explore more sensing applications of the NV center by studying how pressure modifies different aspects of the NV system. We perform a photoluminescence study using both INVs and NDs to determine the pressure dependence of the zero-phonon line, which helps develo** an all-optical pressure sensing protocol with the NV center. We also characterize the spin-lattice relaxation ($T_1$) time of INVs under pressure to lay a foundation for robust pulsed measurements with NV centers in pressurized environments.
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Submitted 13 January, 2023;
originally announced January 2023.
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Probing the Evolution of Electron Spin Wavefunction of NV Center in diamond via Pressure Tuning
Authors:
Kin On Ho,
Man Yin Leung,
P. Reddy,
Jianyu Xie,
King Cho Wong,
Yaxin Jiang,
Wei Zhang,
King Yau Yip,
Wai Kuen Leung,
Yiu Yung Pang,
King Yiu Yu,
Swee K. Goh,
M. W. Doherty,
Sen Yang
Abstract:
Understanding the profile of a qubit's wavefunction is key to its quantum applications. Unlike conducting systems, where a scanning tunneling microscope can be used to probe the electron distribution, there is no direct method for solid-state-defect based qubits in wide-bandgap semiconductors. In this work, we use pressure as a tuning method and a nuclear spin as an atomic scale probe to monitor t…
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Understanding the profile of a qubit's wavefunction is key to its quantum applications. Unlike conducting systems, where a scanning tunneling microscope can be used to probe the electron distribution, there is no direct method for solid-state-defect based qubits in wide-bandgap semiconductors. In this work, we use pressure as a tuning method and a nuclear spin as an atomic scale probe to monitor the hyperfine structure of negatively charged nitrogen vacancy (NV) centers in diamonds under pressure. We present a detailed study on the nearest-neighbor $^{13}C$ hyperfine splitting in the optically detected magnetic resonance (ODMR) spectrum of NV centers at different pressures. By examining the $^{13}C$ hyperfine interaction upon pressurizing, we show that the NV hyperfine parameters have prominent changes, resulting in an increase in the NV electron spin density and rehybridization from $sp^3$ to $sp^2$ bonds. The $ab$ $initio$ calculations of strain dependence of the NV center's hyperfine levels are done independently. The theoretical results qualitatively agree well with experimental data without introducing any fitting parameters. Furthermore, this method can be adopted to probe the evolution of wavefunction in other defect systems. This potential capability could play an important role in develo** magnetometry and quantum information processing using the defect centers.
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Submitted 15 December, 2022;
originally announced December 2022.
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Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$
Authors:
Lingfei Wang,
Wei Zhang,
Zheyu Wang,
Tsz Fung Poon,
Wenyan Wang,
Chun Wai Tsang,
Jianyu Xie,
Xuefeng Zhou,
Yusheng Zhao,
Shanmin Wang,
Kwing To Lai,
Swee K. Goh
Abstract:
AV$_3$Sb$_5$ (A=Cs, K, Rb) are recently discovered superconducting systems ($T_{\rm c}\sim0.9-2.5$ K) in which the vanadium atoms adopt the kagome structure. Intriguingly, these systems enter a charge-density-wave (CDW) phase ($T_{\rm CDW}\sim80-100$ K), and further evidence shows that the time-reversal symmetry is broken in the CDW phase. Concurrently, the anomalous Hall effect has been observed…
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AV$_3$Sb$_5$ (A=Cs, K, Rb) are recently discovered superconducting systems ($T_{\rm c}\sim0.9-2.5$ K) in which the vanadium atoms adopt the kagome structure. Intriguingly, these systems enter a charge-density-wave (CDW) phase ($T_{\rm CDW}\sim80-100$ K), and further evidence shows that the time-reversal symmetry is broken in the CDW phase. Concurrently, the anomalous Hall effect has been observed in KV$_3$Sb$_5$ and CsV$_3$Sb$_5$ inside the novel CDW phase. Here, we report a comprehensive study of a high-quality RbV$_3$Sb$_5$ single crystal with magnetotransport measurements. Our data demonstrate the emergence of anomalous Hall effect in RbV$_3$Sb$_5$ when the charge-density-wave state develops. The magnitude of anomalous Hall resistivity at the low temperature limit is comparable to the reported values in KV$_3$Sb$_5$ and CsV$_3$Sb$_5$. The magnetoresistance channel further reveals a rich spectrum of quantum oscillation frequencies, many of which have not been reported before. In particular, a large quantum oscillation frequency (2235 T), which occupies $\sim$56% of the Brillouin zone area, has been recorded. For the quantum oscillation frequencies with sufficient signal-to-noise ratio, we further perform field-angle dependent measurements and our data indicate two-dimensional Fermi surfaces in RbV$_3$Sb$_5$. Our results provide indispensable information for understanding the anomalous Hall effect and band structure in kagome metals AV$_3$Sb$_5$.
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Submitted 9 February, 2023; v1 submitted 24 October, 2022;
originally announced October 2022.
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Persistent entanglement of valley exciton qubits in transition metal dichalcogenides integrated into a bimodal optical cavity
Authors:
Borges H. S.,
Celso A. N. Júnior,
David S. Brandão,
Fujun Liu,
V. V. R. Pereira,
S. J. Xie,
Fanyao Qu,
A. M. Alcalde
Abstract:
We report dissipative dynamics of two valley excitons residing in the $K$ and $K^\prime$-valleys of bare WSe$_2$ monolayer and the one being integrated into a bimodal optical cavity. In the former, only when the exciton-field detunings in the $K$ and $K^\prime$-valleys are rigorously equal (resonant detuning), partially entangled stationary states can be created. Otherwise the concurrence of excit…
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We report dissipative dynamics of two valley excitons residing in the $K$ and $K^\prime$-valleys of bare WSe$_2$ monolayer and the one being integrated into a bimodal optical cavity. In the former, only when the exciton-field detunings in the $K$ and $K^\prime$-valleys are rigorously equal (resonant detuning), partially entangled stationary states can be created. Otherwise the concurrence of exciton qubits turns to zero. Remarkably, in the latter (the WSe$_2$ monolayer in a bimodal optical cavity), the transfers of entanglement from one subsystem (exciton/light) to the other (light/exciton) take place. Hence a finite stationary concurrence of exciton qubits is always generated, independent of whether the exciton-field detuning in two valleys is resonant or non-resonant. In addition, it can even reach as high as 1 (maximally entangled state of two valley excitons). Since there no real system which has a strictly resonant detuning, an immersion of the WSe$_2$ monolayer in a bimodal optical cavity provides an opportunity to overcome the challenge facing by the bare WSe$_2$, opening a novel realm of potential qubits.
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Submitted 9 September, 2022;
originally announced September 2022.
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Exciton dynamics uncovering electron fractionalization in superconducting cuprates
Authors:
A. Singh,
H. Y. Huang,
J. D. Xie,
J. Okamoto,
C. T. Chen,
T. Watanabe,
A. Fujimori,
M. Imada,
D. J. Huang
Abstract:
Electron quasiparticles play a crucial role in simplifying the description of many-body physics in solids with surprising success. Conventional Landau's Fermi-liquid and quasiparticle theories for high-temperature superconducting cuprates have, however, received skepticism from various angles. A path-breaking framework of electron fractionalization has been established to replace the Fermi-liquid…
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Electron quasiparticles play a crucial role in simplifying the description of many-body physics in solids with surprising success. Conventional Landau's Fermi-liquid and quasiparticle theories for high-temperature superconducting cuprates have, however, received skepticism from various angles. A path-breaking framework of electron fractionalization has been established to replace the Fermi-liquid theory for systems that show the fractional quantum Hall effect and the Mott insulating phenomena; whether it captures the essential physics of the pseudogap and superconducting phases of cuprates is still an open issue. Here, we show that excitonic excitation of optimally doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ with energy far above the superconducting-gap energy scale, about 1 eV or even higher, is unusually enhanced by the onset of superconductivity. Our finding proves the involvement of such high-energy excitons in superconductivity. Therefore, the observed enhancement in the spectral weight of excitons imposes a crucial constraint on theories for the pseudogap and superconducting mechanisms. A simple two-component fermion model which embodies electron fractionalization in the pseudogap state well explains the change, pointing toward a novel route for understanding the electronic structure of superconducting cuprates.
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Submitted 26 July, 2022; v1 submitted 25 July, 2022;
originally announced July 2022.
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Inorganic Crystal Structure Prototype Database based on Unsupervised Learning of Local Atomic Environments
Authors:
Shulin Luo,
Bangyu Xing,
Muhammad Faizan,
Jiahao Xie,
Kun Zhou,
Ruoting Zhao,
Tianshu Li,
Xinjiang Wang,
Yuhao Fu,
Xin He,
Jian Lv,
Lijun Zhang
Abstract:
Recognition of structure prototypes from tremendous known inorganic crystal structures has been an important subject beneficial for material science research and new materials design. The existing databases of inorganic crystal structure prototypes were mostly constructed by classifying materials in terms of the crystallographic space group information. Herein, we employed a distinct strategy to c…
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Recognition of structure prototypes from tremendous known inorganic crystal structures has been an important subject beneficial for material science research and new materials design. The existing databases of inorganic crystal structure prototypes were mostly constructed by classifying materials in terms of the crystallographic space group information. Herein, we employed a distinct strategy to construct the inorganic crystal structure prototype database, relying on the classification of materials in terms of local atomic environments (LAE) accompanied by unsupervised machine learning method. Specifically, we adopted a hierarchical clustering approach onto all experimentally known inorganic crystal structures data to identify structure prototypes. The criterion for hierarchical clustering is the LAE represented by the state-of-the-art structure fingerprints of the improved bond-orientational order parameters and the smooth overlap of atomic positions. This allows us to build up a LAE-based Inorganic Crystal Structure Prototype Database (LAE-ICSPD) containing 15,613 structure prototypes with defined stoichiometries. In addition, we have developed a Structure Prototype Generator Infrastructure (SPGI) package, which is a useful toolkit for structure prototype generation. Our developed SPGI toolkit and LAE-ICSPD are beneficial for investigating inorganic materials in a global way as well as accelerating materials discovery process in the data-driven mode.
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Submitted 8 June, 2022;
originally announced June 2022.
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Catalytic growth of ultralong graphene nanoribbons on insulating substrates
Authors:
Bosai Lyu,
Jiajun Chen,
Shuo Lou,
Can Li,
Lu Qiu,
Wengen Ouyang,
**gxu Xie,
Izaac Mitchell,
Tongyao Wu,
Aolin Deng,
Cheng Hu,
Xianliang Zhou,
Peiyue Shen,
Saiqun Ma,
Zhenghan Wu,
Kenji Watanabe,
Takashi Taniguchi,
Xiaoqun Wang,
Qi Liang,
**feng Jia,
Michael Urbakh,
Oded Hod,
Feng Ding,
Shiyong Wang,
Zhiwen Shi
Abstract:
Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano-electronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the direct growth of micrometre-long GNRs on insulating substrates, which is essential for the fabrication of nano-electronic devices, remains an immense challenge.…
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Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano-electronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the direct growth of micrometre-long GNRs on insulating substrates, which is essential for the fabrication of nano-electronic devices, remains an immense challenge. Here, we report the epitaxial growth of GNRs on an insulating hexagonal boron nitride (h-BN) substrate through nanoparticle-catalysed chemical vapor deposition (CVD). Ultra-narrow GNRs with lengths of up to 10 μm are synthesized. Remarkably, the as-grown GNRs are crystallographically aligned with the h-BN substrate, forming one-dimensional (1D) moiré superlattices. Scanning tunnelling microscopy reveals an average width of 2 nm and a typical bandgap of ~1 eV for similar GNRs grown on conducting graphite substrates. Fully atomistic computational simulations support the experimental results and reveal a competition between the formation of GNRs and carbon nanotubes (CNTs) during the nucleation stage, and van der Waals sliding of the GNRs on the h-BN substrate throughout the growth stage. Our study provides a scalable, single-step method for growing micrometre-long narrow GNRs on insulating substrates, thus opening a route to explore the performance of high-quality GNR devices and the fundamental physics of 1D moiré superlattices.
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Submitted 27 May, 2022;
originally announced May 2022.
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Emergence of large quantum oscillation frequencies in thin flakes of the kagome superconductor CsV$_{3}$Sb$_{5}$
Authors:
W. Zhang,
Lingfei Wang,
Chun Wai Tsang,
Xinyou Liu,
Jianyu Xie,
Wing Chi Yu,
Kwing To Lai,
Swee K. Goh
Abstract:
Kagome metals AV$_3$Sb$_5$~(A = K, Rb, Cs) are recently discovered platforms featuring an unusual charge-density-wave (CDW) order and superconductivity. The electronic band structure of a kagome lattice can host both flat bands as well as Dirac-like bands, offering the possibility to stabilize various quantum states. Here, we probe the band structure of CsV$_3$Sb$_5$ via Shubnikov-de Haas quantum…
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Kagome metals AV$_3$Sb$_5$~(A = K, Rb, Cs) are recently discovered platforms featuring an unusual charge-density-wave (CDW) order and superconductivity. The electronic band structure of a kagome lattice can host both flat bands as well as Dirac-like bands, offering the possibility to stabilize various quantum states. Here, we probe the band structure of CsV$_3$Sb$_5$ via Shubnikov-de Haas quantum oscillations on both bulk single crystals and thin flakes. Although our frequency spectra are broadly consistent with the published data, we unambiguously reveal the existence of new frequencies with large frequencies ranging from $\sim$2085~T to $\sim$2717~T in thin flakes when the magnetic field is along the $c$-axis. These quasi-two-dimensional frequencies correspond to $\sim$52\% to 67\% of the CDW-distorted Brillouin zone volume. The Lifshitz-Kosevich analysis further uncovers surprisingly small cyclotron effective masses, of the order of $\sim$0.1~$m_e$, for these frequencies. Consequently, a large number of high-velocity carriers exists in the thin flake of CsV$_3$Sb$_5$. Comparing with our band structure calculations, we argue that an orbital-selective modification of the band structure is active. Our results provide indispensable information for understanding the fermiology of CsV$_3$Sb$_5$, paving a way for understanding how an orbital-selective mechanism can become an effective means to tune its electronic properties.
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Submitted 31 October, 2022; v1 submitted 17 February, 2022;
originally announced February 2022.
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Fragile pressure-induced magnetism in FeSe superconductors with a thickness reduction
Authors:
Jianyu Xie,
Xinyou Liu,
Wei Zhang,
Sum Ming Wong,
Xuefeng Zhou,
Yusheng Zhao,
Shanmin Wang,
Kwing To Lai,
Swee K. Goh
Abstract:
The emergence of high transition temperature ($T_c$) superconductivity in bulk FeSe under pressure is associated with the tuning of nematicity and magnetism. However, sorting out the relative contributions from magnetic and nematic fluctuations to the enhancement of $T_c$ remains challenging. Here, we design and conduct a series of high-pressure experiments on FeSe thin flakes. We find that, as th…
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The emergence of high transition temperature ($T_c$) superconductivity in bulk FeSe under pressure is associated with the tuning of nematicity and magnetism. However, sorting out the relative contributions from magnetic and nematic fluctuations to the enhancement of $T_c$ remains challenging. Here, we design and conduct a series of high-pressure experiments on FeSe thin flakes. We find that, as the thickness decreases, the nematic phase boundary on temperature-pressure phase diagrams remains robust while the magnetic order is significantly weakened. A local maximum of $T_c$ is observed outside the nematic phase region, not far from the extrapolated nematic endpoint in all samples. However, the maximum $T_c$ value is reduced associated with the weakening of magnetism. No high-$T_c$ phase is observed in the thinnest sample. Our results strongly suggest that nematic fluctuations alone can only have a limited effect while magnetic fluctuations are pivotal on the enhancement of $T_c$ in FeSe.
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Submitted 28 October, 2021;
originally announced October 2021.
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Connections between the Open-boundary Spectrum and Generalized Brillouin Zone in Non-Hermitian Systems
Authors:
Deguang Wu,
Jiao Xie,
Yao Zhou,
** An
Abstract:
Periodic-boundary spectrum, open-boundary spectrum, as well as the generalized Brillouin zone (GBZ) are three essential properties of a one-dimensional non-Hermitian system. In this paper we illustrate that the deep connections between them can be revealed by a series of special similar transformations. This viewpoint closely connects the topological geometry of the open-boundary spectrum with the…
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Periodic-boundary spectrum, open-boundary spectrum, as well as the generalized Brillouin zone (GBZ) are three essential properties of a one-dimensional non-Hermitian system. In this paper we illustrate that the deep connections between them can be revealed by a series of special similar transformations. This viewpoint closely connects the topological geometry of the open-boundary spectrum with the GBZ and provides a new efficient numerical method of calculating them accurately. We further extend these connections to non-Hermitian systems in the symplectic symmetry class. We show that if just the open-boundary features of a non-Hermitian system such as the spectrum and the GBZ, are concerned, the relevant symmetry we should consider is not that of the original system itself, but that of one which has higher symmetry and is related to the original system by a similarity transformation.
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Submitted 18 October, 2021;
originally announced October 2021.
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Realization of second-order photonic square-root topological insulators
Authors:
Wenchao Yan,
Daohong Song,
Shiqi Xia,
Junfang Xie,
Liqin Tang,
**gjun Xu,
Zhigang Chen
Abstract:
Square-root higher-order topological insulators (HOTIs) are recently discovered new topological phases, with intriguing topological properties inherited from a parent lattice Hamiltonian. Different from conventional HOTIs, the square-root HOTIs typically manifest two paired non-zero energy corner states. In this work, we experimentally demonstrate the second-order square-root HOTIs in photonics fo…
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Square-root higher-order topological insulators (HOTIs) are recently discovered new topological phases, with intriguing topological properties inherited from a parent lattice Hamiltonian. Different from conventional HOTIs, the square-root HOTIs typically manifest two paired non-zero energy corner states. In this work, we experimentally demonstrate the second-order square-root HOTIs in photonics for the first time to our knowledge, thereby unveiling such distinct corner states. The specific platform is a laser-written decorated honeycomb lattice (HCL), for which the squared Hamiltonian represents a direct sum of the underlying HCL and breathing Kagome lattice. The localized corner states residing in different bandgaps are observed with characteristic phase structures, in sharp contrast to discrete diffraction in a topologically trivial structure. Our work illustrates a scheme to study fundamental topological phenomena in systems with coexistence of spin-1/2 and spin-1 Dirac-Weyl fermions, and may bring about new possibilities in topology-driven photonic devices.
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Submitted 11 October, 2021;
originally announced October 2021.
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Binary Blends of Diblock Copolymers: An Efficient Route to Complex Spherical Packing Phases
Authors:
Jiayu Xie,
Yu Li,
An-Chang Shi
Abstract:
The phase behaviour of binary blends composed of A$_1$B$_1$ and A$_2$B$_2$ diblock copolymers is systematically studied using the polymeric self-consistent field theory, focusing on the formation and relative stability of various spherical packing phases. The results are summarized in a set of phase diagrams covering a large phase space of the system. Besides the commonly observed body-centered-cu…
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The phase behaviour of binary blends composed of A$_1$B$_1$ and A$_2$B$_2$ diblock copolymers is systematically studied using the polymeric self-consistent field theory, focusing on the formation and relative stability of various spherical packing phases. The results are summarized in a set of phase diagrams covering a large phase space of the system. Besides the commonly observed body-centered-cubic (BCC) phase, complex spherical packing phases including the Frank-Kasper A15 and $σ$ and the Laves C14 and C15 phases could be stabilized by the addition of longer A$_2$B$_2$-copolymers to asymmetric A$_1$B$_1$-copolymers. Stabilizing the complex spherical packing phases requires that the added A$_2$B$_2$-copolymers have a longer A-block and an overall chain length at least comparable to the host copolymer chains. A detailed analysis of the block distributions reveals the existence of inter- and intra-domain segregation of different copolymers, which depends sensitively on the copolymer length ratio and composition. The predicted phase behaviours of the A$_1$B$_1$/A$_2$B$_2$ diblock copolymer blends are in good agreement with available experimental and theoretical results. The study demonstrated that binary blends of diblock copolymers provide an efficient route to regulate the emergence and stability of complex spherical packing phases.
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Submitted 31 August, 2021;
originally announced August 2021.
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The FAST Galactic Plane Pulsar Snapshot survey: I. Project design and pulsar discoveries
Authors:
J. L. Han,
Chen Wang,
P. F. Wang,
Tao Wang,
D. J. Zhou,
**g-Hai Sun,
Yi Yan,
Wei-Qi Su,
Wei-Cong **g,
Xue Chen,
X. Y. Gao,
Li-Gang Hou,
Jun Xu,
K. J. Lee,
Na Wang,
Peng Jiang,
Ren-Xin Xu,
Jun Yan,
Heng-Qian Gan,
Xin Guan,
Wen-Jun Huang,
**-Chen Jiang,
Hui Li,
Yun-Peng Men,
Chun Sun
, et al. (12 additional authors not shown)
Abstract:
Discovery of pulsars is one of the main goals for large radio telescopes. The Five-hundred-meter Aperture Spherical radio Telescope (FAST), that incorporates an L-band 19-beam receiver with a system temperature of about 20~K, is the most sensitive radio telescope utilized for discovering pulsars. We designed the {\it snapshot} observation mode for a FAST key science project, the Galactic Plane Pul…
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Discovery of pulsars is one of the main goals for large radio telescopes. The Five-hundred-meter Aperture Spherical radio Telescope (FAST), that incorporates an L-band 19-beam receiver with a system temperature of about 20~K, is the most sensitive radio telescope utilized for discovering pulsars. We designed the {\it snapshot} observation mode for a FAST key science project, the Galactic Plane Pulsar Snapshot (GPPS) survey, in which every four nearby pointings can observe {\it a cover} of a sky patch of 0.1575 square degrees through beam-switching of the L-band 19-beam receiver. The integration time for each pointing is 300 seconds so that the GPPS observations for a cover can be made in 21 minutes. The goal of the GPPS survey is to discover pulsars within the Galactic latitude of $\pm10^{\circ}$ from the Galactic plane, and the highest priority is given to the inner Galaxy within $\pm5^{\circ}$. Up to now, the GPPS survey has discovered 201 pulsars, including currently the faintest pulsars which cannot be detected by other telescopes, pulsars with extremely high dispersion measures (DMs) which challenge the currently widely used models for the Galactic electron density distribution, pulsars coincident with supernova remnants, 40 millisecond pulsars, 16 binary pulsars, some nulling and mode-changing pulsars and rotating radio transients (RRATs). The follow-up observations for confirmation of new pulsars have polarization-signals recorded for polarization profiles of the pulsars. Re-detection of previously known pulsars in the survey data also leads to significant improvements in parameters for 64 pulsars. The GPPS survey discoveries are published and will be updated at http://zmtt.bao.ac.cn/GPPS/ .
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Submitted 18 May, 2021;
originally announced May 2021.
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Fano resonance enabled infrared nano-imaging of local strain in bilayer graphene
Authors:
**g Du,
Bosai Lyu,
Wanfei Shan,
Jiajun Chen,
Xianliang Zhou,
**gxu Xie,
Aolin Deng,
Cheng Hu,
Qi Liang,
Guibai Xie,
Xiaojun Li,
Weidong Luo,
Zhiwen Shi
Abstract:
Detection of local strain at the nanometer scale with high sensitivity remains challenging. Here we report near-field infrared nano-imaging of local strains in bilayer graphene through probing strain-induced shifts of phonon frequency. As a non-polar crystal, intrinsic bilayer graphene possesses little infrared response at its transverse optical (TO) phonon frequency. The reported optical detectio…
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Detection of local strain at the nanometer scale with high sensitivity remains challenging. Here we report near-field infrared nano-imaging of local strains in bilayer graphene through probing strain-induced shifts of phonon frequency. As a non-polar crystal, intrinsic bilayer graphene possesses little infrared response at its transverse optical (TO) phonon frequency. The reported optical detection of local strain is enabled by applying a vertical electrical field that breaks the symmetry of the two graphene layers and introduces finite electrical dipole moment to graphene phonon. The activated phonon further interacts with continuum electronic transitions, and generates a strong Fano resonance. The resulted Fano resonance features a very sharp near-field infrared scattering peak, which leads to an extraordinary sensitivity of ~0.002% for the strain detection. Our studies demonstrate the first nano-scale near-field Fano resonance, provide a new way to probe local strains with high sensitivity in non-polar crystals, and open exciting possibilities for studying strain-induced rich phenomena.
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Submitted 19 April, 2021;
originally announced April 2021.
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JAMIP: an artificial-intelligence aided data-driven infrastructure for computational materials informatics
Authors:
Xin-Gang Zhao,
Kun zhou,
Bangyu Xing,
Ruoting Zhao,
Shulin Luo,
Tianshu Li,
Yuanhui Sun,
Guangren Na,
Jiahao Xie,
Xiaoyu yang,
Xinjiang Wang,
Xiaoyu Wang,
Xin He,
Jian Lv,
Yuhao Fu,
Lijun Zhang
Abstract:
Materials informatics has emerged as a promisingly new paradigm for accelerating materials discovery and design. It exploits the intelligent power of machine learning methods in massive materials data from experiments or simulations to seek for new materials, functionality, principles, etc. Develo** specialized facility to generate, collect, manage, learn and mine large-scale materials data is c…
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Materials informatics has emerged as a promisingly new paradigm for accelerating materials discovery and design. It exploits the intelligent power of machine learning methods in massive materials data from experiments or simulations to seek for new materials, functionality, principles, etc. Develo** specialized facility to generate, collect, manage, learn and mine large-scale materials data is crucial to materials informatics. We herein developed an artificial-intelligence-aided data-driven infrastructure named Jilin Artificial-intelligence aided Materials-design Integrated Package (JAMIP), which is an open-source Python framework to meet the research requirements of computational materials informatics. It is integrated by materials production factory, high-throughput first-principles calculations engine, automatic tasks submission and monitoring progress, data extraction, management and storage system, and artificial intelligence machine learning based data mining functions. We have integrated specific features such as inorganic crystal structure prototype database to facilitate high-throughput calculations and essential modules associated with machine learning studies of functional materials. We demonstrated how our developed code is useful in exploring materials informatics of optoelectronic semiconductors by taking halide perovskites as typical case. By obeying the principles of automation, extensibility, reliability and intelligence, the JAMIP code is a promisingly powerful tool contributing to the fast-growing field of computational materials informatics.
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Submitted 14 March, 2021;
originally announced March 2021.
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Imaging local discharge cascades for correlated electrons in WS2/WSe2 moiré superlattices
Authors:
Hongyuan Li,
Shaowei Li,
Mit H. Naik,
**gxu Xie,
Xinyu Li,
Emma Regan,
Danqing Wang,
Wenyu Zhao,
Kentaro Yumigeta,
Mark Blei,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Steven G. Louie,
Michael F. Crommie,
Feng Wang
Abstract:
Transition metal dichalcogenide (TMD) moiré heterostructures provide an ideal platform to explore the extended Hubbard model1 where long-range Coulomb interactions play a critical role in determining strongly correlated electron states. This has led to experimental observations of Mott insulator states at half filling2-4 as well as a variety of extended Wigner crystal states at different fractiona…
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Transition metal dichalcogenide (TMD) moiré heterostructures provide an ideal platform to explore the extended Hubbard model1 where long-range Coulomb interactions play a critical role in determining strongly correlated electron states. This has led to experimental observations of Mott insulator states at half filling2-4 as well as a variety of extended Wigner crystal states at different fractional fillings5-9. Microscopic understanding of these emerging quantum phases, however, is still lacking. Here we describe a novel scanning tunneling microscopy (STM) technique for local sensing and manipulation of correlated electrons in a gated WS2/WSe2 moiré superlattice that enables experimental extraction of fundamental extended Hubbard model parameters. We demonstrate that the charge state of local moiré sites can be imaged by their influence on STM tunneling current, analogous to the charge-sensing mechanism in a single-electron transistor. In addition to imaging, we are also able to manipulate the charge state of correlated electrons. Discharge cascades of correlated electrons in the moiré superlattice are locally induced by ram** the STM bias, thus enabling the nearest-neighbor Coulomb interaction (UNN) to be estimated. 2D map** of the moiré electron charge states also enables us to determine onsite energy fluctuations at different moiré sites. Our technique should be broadly applicable to many semiconductor moiré systems, offering a powerful new tool for microscopic characterization and control of strongly correlated states in moiré superlattices.
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Submitted 16 February, 2021;
originally announced February 2021.
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Strongly modulated ultrafast demagnetization and magnetization precession dynamics in ferrimagnetic Gdx(CoFe)1-x alloys via 3d-4f intersublattice exchange coupling
Authors:
Y. Ren,
L. L. Zhang,
X. D. He,
G. J. Wu,
J. W. Gao,
P. Ran,
L. Z. Dan,
T. Wang,
X. W. Zhou,
Z. Liu,
J. Y. Xie,
Q. Y. **,
Zongzhi Zhang
Abstract:
Manipulation of the intersublattice interaction strengh (JRE-TM) in rare earth (RE)-transition metal (TM) alloys is a key issue to understand how efficiently the laser-induced angular momentum transfers from 3d to 4f spins and to have a better control of the ultrafast spin dynamics. In this work, the relationships between laser-induced demagnetization process and the intersublattice 3d-4f interact…
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Manipulation of the intersublattice interaction strengh (JRE-TM) in rare earth (RE)-transition metal (TM) alloys is a key issue to understand how efficiently the laser-induced angular momentum transfers from 3d to 4f spins and to have a better control of the ultrafast spin dynamics. In this work, the relationships between laser-induced demagnetization process and the intersublattice 3d-4f interaction for the GdCoFe alloys were systematically studied. The ultrafast two-stage demagnetization process could change into a one-stage mode as the angular momentum transferring channel between 3d and 4f spins is switched off, which could be modulated by JRE-TM. Furthermore, both the effective g-factor and dam** constant deduced by the subsequently laser-induced magnetization precession process diverge at the angular momentum compensation point based on the ferromagnetic resonance method with the LLG equations. The results provide an alternative way to efficiently manipulate the ultrafast demagnetization time for practical applications.
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Submitted 29 December, 2020;
originally announced December 2020.
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Observation of nonreciprocal magneto-optical scattering in nonencapsulated few-layered CrI3
Authors:
Zhen Liu,
Kai Guo,
Guangwei Hu,
Zhongtai Shi,
Yue Li,
Linbo Zhang,
Haiyan Chen,
Li Zhang,
Peiheng Zhou,
Haipeng Lu,
Miao-Ling Lin,
Sizhao Liu,
Yingchun Cheng,
Xue Lu Liu,
Jianliang Xie,
Lei Bi,
**-Heng Tan,
Longjiang Deng,
Cheng-Wei Qiu,
Bo Peng
Abstract:
Magneto-optical effect refers to a rotation of polarization plane, which has been widely studied in traditional ferromagnetic metal and insulator films and scarcely in two-dimensional layered materials. Here we uncover a new nonreciprocal magneto-inelastic light scattering effect in ferromagnetic few-layer CrI3. We observed a rotation of the polarization plane of inelastic light scattering between…
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Magneto-optical effect refers to a rotation of polarization plane, which has been widely studied in traditional ferromagnetic metal and insulator films and scarcely in two-dimensional layered materials. Here we uncover a new nonreciprocal magneto-inelastic light scattering effect in ferromagnetic few-layer CrI3. We observed a rotation of the polarization plane of inelastic light scattering between -20o and +60o that are tunable by an out-of-plane magnetic field from -2.5 to 2.5 T. It is experimentally observed that the degree of polarization can be magnetically manipulated between -20% and 85%. This work raises a new magneto-optical phenomenon and could create opportunities of applying 2D ferromagnetic materials in Raman lasing, topological photonics, and magneto-optical modulator for information transport and storage.
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Submitted 9 October, 2020; v1 submitted 28 August, 2020;
originally announced August 2020.
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Imaging moiré flat bands in 3D reconstructed WSe2/WS2 superlattices
Authors:
Hongyuan Li,
Shaowei Li,
Mit H. Naik,
**gxu Xie,
Xinyu Li,
Jiayin Wang,
Emma Regan,
Danqing Wang,
Wenyu Zhao,
Sihan Zhao,
Salman Kahn,
Kentaro Yumigeta,
Mark Blei,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Steven G. Louie,
Feng Wang,
Michael F. Crommie
Abstract:
Moiré superlattices in transition metal dichalcogenide (TMD) heterostructures can host novel correlated quantum phenomena due to the interplay of narrow moiré flat bands and strong, long-range Coulomb interactions1-5. However, microscopic knowledge of the atomically-reconstructed moiré superlattice and resulting flat bands is still lacking, which is critical for fundamental understanding and contr…
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Moiré superlattices in transition metal dichalcogenide (TMD) heterostructures can host novel correlated quantum phenomena due to the interplay of narrow moiré flat bands and strong, long-range Coulomb interactions1-5. However, microscopic knowledge of the atomically-reconstructed moiré superlattice and resulting flat bands is still lacking, which is critical for fundamental understanding and control of the correlated moiré phenomena. Here we quantitatively study the moiré flat bands in three-dimensional (3D) reconstructed WSe2/WS2 moiré superlattices by comparing scanning tunneling spectroscopy (STS) of high quality exfoliated TMD heterostructure devices with ab initio simulations of TMD moiré superlattices. A strong 3D buckling reconstruction accompanied by large in-plane strain redistribution is identified in our WSe2/WS2 moiré heterostructures. STS imaging demonstrates that this results in a remarkably narrow and highly localized K-point moiré flat band at the valence band edge of the heterostructure. A series of moiré flat bands are observed at different energies that exhibit varying degrees of localization. Our observations contradict previous simplified theoretical models but agree quantitatively with ab initio simulations that fully capture the 3D structural reconstruction. Here the strain redistribution and 3D buckling dominate the effective moiré potential and result in moiré flat bands at the Brillouin zone K points.
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Submitted 12 July, 2020;
originally announced July 2020.
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Helium Incorporation Stabilized Direct-gap Silicides
Authors:
Shicong Ding,
**gming Shi,
Jiahao Xie,
Wenwen Cui,
Pan Zhang,
Kang Yang,
Jian Hao,
Meiling Xu,
Qingxin Zeng,
Lijun Zhang,
Yinwei Li
Abstract:
The search of direct-gap Si-based semiconductors is of great interest due to the potential application in many technologically relevant fields. This work examines the incorporation of He as a possible route to form a direct band gap in Si. Structure predictions and first-principles calculations have shown that He reacts with Si at high pressure, to form the stable compounds Si2He and Si3He. Both c…
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The search of direct-gap Si-based semiconductors is of great interest due to the potential application in many technologically relevant fields. This work examines the incorporation of He as a possible route to form a direct band gap in Si. Structure predictions and first-principles calculations have shown that He reacts with Si at high pressure, to form the stable compounds Si2He and Si3He. Both compounds have host-guest structures consisting of a channel-like Si host framework filled with He guest atoms. The Si frameworks in two compounds could be persisted to ambient pressure after removal of He, forming two pure Si allotropes. Both Si-He compounds and both Si allotropes exhibit direct or quasi-direct band gaps of 0.84-1.34 eV, close to the optimal value (~1.3 eV) for solar cell applications. Analysis shows that Si2He with an electric-dipole-transition allowed band gap possesses higher absorption capacity than diamond cubic Si, which makes it to be a promising candidate material for thin-film solar cell.
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Submitted 11 June, 2020;
originally announced June 2020.
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Detection of hole pockets in the candidate type-II Weyl semimetal MoTe$_2$ from Shubnikov-de Haas quantum oscillations
Authors:
Y. J. Hu,
W. C. Yu,
Kwing To Lai,
D. Sun,
F. F. Balakirev,
W. Zhang,
J. Y. Xie,
K. Y. Yip,
E. I. Paredes Aulestia,
Rajveer Jha,
Ryuji Higashinaka,
Tatsuma D. Matsuda,
Y. Yanase,
Yuji Aoki,
Swee K. Goh
Abstract:
The bulk electronic structure of $T_d$-MoTe$_2$ features large hole Fermi pockets at the Brillouin zone center ($Γ$) and two electron Fermi surfaces along the $Γ-X$ direction. However, the large hole pockets, whose existence has important implications for the Weyl physics of $T_d$-MoTe$_2$, has never been conclusively detected in quantum oscillations. This raises doubt about the realizability of M…
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The bulk electronic structure of $T_d$-MoTe$_2$ features large hole Fermi pockets at the Brillouin zone center ($Γ$) and two electron Fermi surfaces along the $Γ-X$ direction. However, the large hole pockets, whose existence has important implications for the Weyl physics of $T_d$-MoTe$_2$, has never been conclusively detected in quantum oscillations. This raises doubt about the realizability of Majorana states in $T_d$-MoTe$_2$, because these exotic states rely on the existence of Weyl points, which originated from the same band structure predicted by density functional theory (DFT). Here, we report an unambiguous detection of these elusive hole pockets via Shubnikov-de Haas (SdH) quantum oscillations. At ambient pressure, the quantum oscillation frequencies for these pockets are 988 T and 1513 T, when the magnetic field is applied along the $c$-axis. The quasiparticle effective masses $m^*$ associated with these frequencies are 1.50 $m_e$ and 2.77 $m_e$, respectively, indicating the importance of Coulomb interactions in this system. We further measure the SdH oscillations under pressure. At 13 kbar, we detected a peak at 1798 T with $m^*$ = 2.86 $m_e$. Relative to the oscillation data at a lower pressure, the amplitude of this peak experienced an enhancement, which can be attributed to the reduced curvature of the hole pockets under pressure. Combining our experimental data with DFT + $U$ calculations, where $U$ is the Hubbard parameter, our results shed light on why these important hole pockets have not been detected until now.
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Submitted 10 February, 2020; v1 submitted 20 August, 2019;
originally announced August 2019.
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Modulation of magnetism via electric field in MgO nanoribbons
Authors:
Liang Liu,
Xue Ren,
Jihao Xie,
Bin Cheng,
Jifan Hu
Abstract:
We report on a theoretical study of electromagnetic properties of zigzag magnesium oxides nanoribbons (Z-MgONRs). We propose that the polar charges and the spin polarization are the two key factors for edge magnetism. Based on first-principle calculations, we demonstrate that both O- and Mg-edges are magnetic and their magnetic moments all can be efficiently modulated via external electric field.A…
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We report on a theoretical study of electromagnetic properties of zigzag magnesium oxides nanoribbons (Z-MgONRs). We propose that the polar charges and the spin polarization are the two key factors for edge magnetism. Based on first-principle calculations, we demonstrate that both O- and Mg-edges are magnetic and their magnetic moments all can be efficiently modulated via external electric field.And the edge magnetism is further studied in the framework of effective tight-binding model, which provides a starting point for the calculation of one particle Green's function and the determination of exchange interactions. Utilizing the linear response model, we find that Z-MgONRs exhibit two kinds of exchange interaction with extremely different natures. The magnetism in O-edge is strongly localized with ferromagnetic order while the magnetism in Mg-edge is itinerant with Ruderman-Kittel-Kasuya-Yosida (RKKY) like interactions. And these two couplings can also be modulated by electric field, giving rise to the electrical modulations of spin-density-wave (SDW) and the modulation of Curie temperature in O-edge. All these suggest that Z-MgONRs are ideal platforms for ME coupling and appealing candidates for manifold applications.
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Submitted 6 May, 2019;
originally announced May 2019.
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Low-impedance superconducting microwave resonators for strong coupling to small magnetic mode volumes
Authors:
Lauren McKenzie-Sell,
Junyu Xie,
Chang-Min Lee,
Jason W. A. Robinson,
Chiara Ciccarelli,
James A. Haigh
Abstract:
Recent experiments on strongly coupled microwave and ferromagnetic resonance modes have focused on large volume bulk crystals such as yttrium iron garnet, typically of millimeter-scale dimensions. We extend these experiments to lower volumes of magnetic material by exploiting low-impedance lumped-element microwave resonators. The low impedance equates to a smaller magnetic mode volume, which allow…
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Recent experiments on strongly coupled microwave and ferromagnetic resonance modes have focused on large volume bulk crystals such as yttrium iron garnet, typically of millimeter-scale dimensions. We extend these experiments to lower volumes of magnetic material by exploiting low-impedance lumped-element microwave resonators. The low impedance equates to a smaller magnetic mode volume, which allows us to couple to a smaller number of spins in the ferromagnet. Compared to previous experiments, we reduce the number of participating spins by two orders of magnitude, while maintaining the strength of the coupling rate. Strongly coupled devices with small volumes of magnetic material may allow the use of spin orbit torques, which require high current densities incompatible with existing structures.
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Submitted 29 January, 2019;
originally announced January 2019.
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Free-standing bialkali photocathodes using atomically thin substrates
Authors:
Hisato Yamaguchi,
Fangze Liu,
Jeffrey DeFazio,
Mengjia Gaowei,
Claudia W. Narvaez Villarrubia,
Junqi Xie,
John Sinsheimer,
Derek Strom,
Vitaly Pavlenko,
Kevin L. Jensen,
John Smedley,
Aditya D. Mohite,
Nathan A. Moody
Abstract:
We report successful deposition of high quantum efficiency (QE) bialkali antimonide K2CsSb photocathodes on graphene films. The results pave a pathway towards an ultimate goal of encapsulating technologically-relevant photocathodes for accelerator technology with an atomically-thin protecting layer to enhance lifetime while minimizing QE losses. A QE of 17 % at ~3.1 eV (405 nm) is the highest valu…
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We report successful deposition of high quantum efficiency (QE) bialkali antimonide K2CsSb photocathodes on graphene films. The results pave a pathway towards an ultimate goal of encapsulating technologically-relevant photocathodes for accelerator technology with an atomically-thin protecting layer to enhance lifetime while minimizing QE losses. A QE of 17 % at ~3.1 eV (405 nm) is the highest value reported so far on graphene substrates and is comparable to that obtained on stainless steel and nickel reference substrates. The spectral responses of the photocathodes on graphene exhibit signature features of K2CsSb including the characteristic absorption at ~2.5 eV. Materials characterization based on X-ray fluorescence (XRF) and X-ray diffraction (XRD) reveals that the composition and crystal quality of these photocathodes deposited on graphene is comparable to those deposited on a reference substrate. Quantitative agreement between optical calculations and QE measurements for the K2CsSb on free suspended graphene and a graphene coated metal substrate further confirms the high quality interface between the photocathodes and graphene. Finally, a correlation between the QE and graphene quality as characterized by Raman spectroscopy suggests that a lower density of atomistic defects in the graphene films leads to higher QE of the deposited K2CsSb photocathodes.
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Submitted 12 February, 2019; v1 submitted 27 February, 2018;
originally announced February 2018.
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A large enhancement of carrier mobility in phosphorene by introducing hexagonal boron nitride substrate
Authors:
Jiafeng Xie,
Z. Y. Zhang,
D. Z. Yang,
M. S. Si,
D. S. Xue,
Xiaohui Deng
Abstract:
Carrier mobility is a crucial character for electronic devices since it domains power dissipation and switching speed. Materials with certain high carrier mobility, equally, unveil rich unusual physical phenomena elusive in their conventional counterparts. As a consequence, the methods to enhance the carrier mobility of materials receive immense research interests due to their potential applicatio…
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Carrier mobility is a crucial character for electronic devices since it domains power dissipation and switching speed. Materials with certain high carrier mobility, equally, unveil rich unusual physical phenomena elusive in their conventional counterparts. As a consequence, the methods to enhance the carrier mobility of materials receive immense research interests due to their potential applications in more effective electronic devices and enrichment of more unusual phenomena. For instance, introducing a flat hexagonal boron nitride (h-BN) substrate to enhance the carrier mobility has been achieved experimentally. However, the underlying mechanics is not well understood. In this study, we estimate the carrier mobility of phosphorene on h-BN substrate (P/h-BN) within the framework of the phonon-limited scattering model at first-principles level. %Our results are generic. Besides high-$κ$ dielectric property, h-BN also possesses excellent mechanical property of a high two-dimensional elastic modulus. The P/h-BN heterostructure inherits the high elastic modulus of h-BN, leading to an enhanced carrier mobility in phosphorene. Owing to the weak van der Waals interactions between the layers, the unique electronic properties of phosphorene are almost perfectly preserved near the Fermi level, guaranteeing the superior electronic transport in P/h-BN. Our findings offer a new perspective to improve the carrier mobility in phosphorene as well as other 2D materials based field effect transistors.
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Submitted 6 April, 2017; v1 submitted 11 October, 2016;
originally announced October 2016.
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High-gravity Spreading of Liquid Coatings on Wetting Flexible Substrates
Authors:
Chen Yang,
Adam Burrous,
**g** Xie,
Hassan Shaikh,
Akofa Elike-Avion,
Luis Rojas,
Adithya Ramachandran,
Wonjae Choi,
Aaron D. Mazzeo
Abstract:
This work describes a mechanical approach for manipulating the capillary length and spreading of liquid coatings on flexible substrates with high gravity. Experimental verification in the literature has focused on cases under standard gravity on earth, and to the authors' knowledge, this work is the first to explore its relevance to spreading puddles under high gravity. By using centrifugation wit…
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This work describes a mechanical approach for manipulating the capillary length and spreading of liquid coatings on flexible substrates with high gravity. Experimental verification in the literature has focused on cases under standard gravity on earth, and to the authors' knowledge, this work is the first to explore its relevance to spreading puddles under high gravity. By using centrifugation with a high-density liquid base underneath a coated substrate, it is possible to apply acceleration normal to a substrate to decrease the capillary length and increase the rate of spreading. Due to the nature of centrifugation, this method works primarily on flexible substrates, which bend with a curvature that conforms to a contour of uniformly distributed centrifugal acceleration. With high gravity of 600 g applied, the capillary length reduces by a factor of 24.5, and the spreading shifts from "transient spreading" between the surface tension-driven and gravity-driven regimes to the gravity-driven regime. Experimental results show that high gravitational acceleration will enhance the rate of spreading such that a puddle, which would require 12 hours under standard gravity on earth to go from an 8-μl droplet to a 40-μm thick puddle, would require less than 1 minute under 600 g. Overall, this work suggests that previously derived expressions for gravity-driven spreading of puddles under earth's standard gravity extend to predicting the behavior of puddles spreading on smooth, wetting substrates exposed to more than 100 g's of acceleration.
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Submitted 14 September, 2015;
originally announced September 2015.
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Negative Poisson's ratios in few-layer orthorhombic arsenic from first-principles calculations
Authors:
Jianwei Han,
Jiafeng Xie,
Z. Y. Zhang,
D. Z. Yang,
M. S. Si,
D. S. Xue
Abstract:
A material exhibiting a negative Poisson's ratio is always one of the leading topics in materials science, which is due to the potential applications in those special areas such as defence and medicine. In this letter, we demonstrate a new material, few-layer orthorhombic arsenic, also possesses the negative Poisson's ratio. For monolayer arsenic, the negative Poisson's ratio is predicted to be ar…
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A material exhibiting a negative Poisson's ratio is always one of the leading topics in materials science, which is due to the potential applications in those special areas such as defence and medicine. In this letter, we demonstrate a new material, few-layer orthorhombic arsenic, also possesses the negative Poisson's ratio. For monolayer arsenic, the negative Poisson's ratio is predicted to be around -0.09, originated from the hinge-like structure within the single layer of arsenic. When the layer increases, the negative Poisson's ratio becomes more negative and finally approaches the limit at four-layer, which is very close to the bulk's value of -0.12. The underlying mechanism is proposed for this layer-dependent negative Poisson's ratio, where the internal bond lengths as well as the normal Poisson's ratio within layer play a key role. The study like ours sheds new light on the physics of negative Poisson's ratio in those hinge-like nano-materials.
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Submitted 7 January, 2015;
originally announced January 2015.
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Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene
Authors:
Z. Y. Zhang,
Jiafeng Xie,
D. Z. Yang,
Y. H. Wang,
M. S. Si,
D. S. Xue
Abstract:
In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons. Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approa…
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In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons. Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approach as high as several thousand square centimeters per volt-second and simultaneously exhibit high directional anisotropy. All these make few-layer arsenene promising for device applications in semiconducting industry.
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Submitted 19 April, 2015; v1 submitted 12 November, 2014;
originally announced November 2014.
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A theoretical study of blue phosphorene nanoribbons based on first-principles calculations
Authors:
Jiefeng Xie,
M. S. Si,
D. Z. Yang,
Z. Y. Zhang,
D. S. Xue
Abstract:
Based on first-principles calculations, we present a quantum confinement mechanism for the band gaps of blue phosphorene nanoribbons (BPNRs) as a function of their widths. The BPNRs considered have either armchair or zigzag shaped edges on both sides with hydrogen saturation. Both the two types of nanoribbons are shown to be indirect semiconductors. An enhanced energy gap of around 1 eV can be rea…
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Based on first-principles calculations, we present a quantum confinement mechanism for the band gaps of blue phosphorene nanoribbons (BPNRs) as a function of their widths. The BPNRs considered have either armchair or zigzag shaped edges on both sides with hydrogen saturation. Both the two types of nanoribbons are shown to be indirect semiconductors. An enhanced energy gap of around 1 eV can be realized when the width decreases to about 10 ang. The underlying physics is ascribed to the quantum confinement. More importantly, the quantum confinement parameters are obtained by fitting the calculated gaps with respect to their widths. The results show that the quantum confinement in armchair nanoribbons is stronger than that in zigzag ones. This study provides an efficient approach to tune the energy gap in BPNRs.
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Submitted 17 May, 2014;
originally announced May 2014.
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Spin-charge disparity of polarons in organic ferromagnets
Authors:
G. C. Hu,
H. Wang,
J. F. Ren,
S. J. Xie,
C. Timm
Abstract:
Polaron formation in quasi-one-dimensional organic ferromagnets is studied based on an extended Su-Schrieffer-Heeger model combined with a Kondo term. The charge distribution of the polaron is found to be highly asymmetric under spatial reflection, due to the spin radicals. On the contrary, the spin density is nearly symmetric; the spin asymmetry introduced by the extra electron inducing the polar…
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Polaron formation in quasi-one-dimensional organic ferromagnets is studied based on an extended Su-Schrieffer-Heeger model combined with a Kondo term. The charge distribution of the polaron is found to be highly asymmetric under spatial reflection, due to the spin radicals. On the contrary, the spin density is nearly symmetric; the spin asymmetry introduced by the extra electron inducing the polaron formation is nearly compensated by the spin polarization of the lower-energy states. We discuss these results on the basis of real-space mean-field calculations and symmetry arguments.
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Submitted 28 May, 2013;
originally announced May 2013.