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Chern Bands' Optimally Localized Wannier Functions and Fractional Chern Insulators
Authors:
Fang Xie,
Yuan Fang,
Lei Chen,
Jennifer Cano,
Qimiao Si
Abstract:
Recent development on fractional Chern insulators and proximate phases call for a real space representation of isolated Chern bands. Here we propose a new method for a general construction of optimally localized Wannier functions from such Chern bands. We do so through an optimal gauge choice of the Bloch states of a Chern band with the singularity placed at any desired position in momentum space.…
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Recent development on fractional Chern insulators and proximate phases call for a real space representation of isolated Chern bands. Here we propose a new method for a general construction of optimally localized Wannier functions from such Chern bands. We do so through an optimal gauge choice of the Bloch states of a Chern band with the singularity placed at any desired position in momentum space. We apply this method to construct the optimally localized Wannier functions for kagome lattice, and use it to identify channels of interactions that are favorable to the development of fractional Chern insulators. Implications of the approach for the interplay between correlations and topology in broader contexts are discussed.
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Submitted 11 July, 2024;
originally announced July 2024.
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Ubiquitous Flat Bands in a Cr-based Kagome Superconductor
Authors:
Yucheng Guo,
Zehao Wang,
Fang Xie,
Yuefei Huang,
Bin Gao,
Ji Seop Oh,
Han Wu,
Zhaoyu Liu,
Zheng Ren,
Yuan Fang,
Ananya Biswas,
Yichen Zhang,
Ziqin Yue,
Cheng Hu,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Makoto Hashimoto,
Donghui Lu,
Junichiro Kono,
Jiun-Haw Chu,
Boris I Yakobson,
Robert J Birgeneau,
Qimiao Si,
Pengcheng Dai
, et al. (1 additional authors not shown)
Abstract:
In the quest for novel quantum states driven by topology and correlation, kagome lattice materials have garnered significant interest due to their distinctive electronic band structures, featuring flat bands (FBs) arising from the quantum destructive interference of the electronic wave function. The tuning of the FBs to the chemical potential would lead to the possibility of liberating electronic…
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In the quest for novel quantum states driven by topology and correlation, kagome lattice materials have garnered significant interest due to their distinctive electronic band structures, featuring flat bands (FBs) arising from the quantum destructive interference of the electronic wave function. The tuning of the FBs to the chemical potential would lead to the possibility of liberating electronic instabilities that lead to emergent electronic orders. Despite extensive studies, direct evidence of FBs tuned to the chemical potential and their participation in emergent electronic orders have been lacking in bulk quantum materials. Here using a combination of Angle-Resolved Photoemission Spectroscopy (ARPES) and Density Functional Theory (DFT), we reveal that the low-energy electronic structure of the recently discovered Cr-based kagome metal superconductor CsCr3Sb5 is dominated by a pervasive FB in close proximity to, and below the Fermi level. A comparative analysis with orbital-projected DFT and polarization dependence measurement uncovers that an orbital-selective renormalization mechanism is needed to reconcile the discrepancy with the DFT calculations, which predict the FB to appear 200 meV above the Fermi level. Furthermore, we observe the FB to shift away from the Fermi level by 20 meV in the low-temperature density wave-ordered phase, highlighting the role of the FB in the emergent electronic order. Our results reveal CsCr3Sb5 to stand out as a promising platform for further exploration into the effects of FBs near the Fermi level on kagome lattices, and their role in emergent orders in bulk quantum materials.
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Submitted 12 June, 2024; v1 submitted 7 June, 2024;
originally announced June 2024.
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Electron correlations in the kagome flat band metal $\rm CsCr_3Sb_5$
Authors:
Fang Xie,
Yuan Fang,
Ying Li,
Yuefei Huang,
Lei Chen,
Chandan Setty,
Shouvik Sur,
Boris Yakobson,
Roser Valentí,
Qimiao Si
Abstract:
Kagome metals offer a unique platform for investigating robust electron-correlation effects because of their lattice geometry, flat bands and multi-orbital nature. In the cases with active flat bands, recent theoretical studies have pointed to a rich phase diagram that contains not only electronic orders but also quantum criticality. $\rm CsCr_3Sb_5$ has emerged as a strong candidate for exploring…
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Kagome metals offer a unique platform for investigating robust electron-correlation effects because of their lattice geometry, flat bands and multi-orbital nature. In the cases with active flat bands, recent theoretical studies have pointed to a rich phase diagram that contains not only electronic orders but also quantum criticality. $\rm CsCr_3Sb_5$ has emerged as a strong candidate for exploring such new physics. Here, using effective tight-binding models obtained from ab initio calculations, we study the effects of electronic correlations and symmetries on the electronic structure of $\rm CsCr_3 Sb_5$. The effective tight-binding model and Fermi surface comprise multiple Cr-$d$ orbitals and Sb-$p$ orbitals. The introduction of Hubbard-Kanamori interactions leads to orbital-selective band renormalization dominated by the $d_{xz}$ band, concurrently producing emergent flat bands very close to the Fermi level. Our analysis sets the stage for further investigations into the electronic properties of $\rm CsCr_3Sb_5$, including electronic orders, quantum criticality and unconventional superconductivity, which promise to shed much new light into the electronic materials with frustrated lattices and bring about new connections with the correlation physics of a variety of strongly correlated systems.
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Submitted 6 March, 2024;
originally announced March 2024.
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GPTFF: A high-accuracy out-of-the-box universal AI force field for arbitrary inorganic materials
Authors:
Fankai Xie,
Tenglong Lu,
Sheng Meng,
Miao Liu
Abstract:
This study introduces a novel AI force field, namely graph-based pre-trained transformer force field (GPTFF), which can simulate arbitrary inorganic systems with good precision and generalizability. Harnessing a large trove of the data and the attention mechanism of transformer algorithms, the model can accurately predict energy, atomic forces, and stress with Mean Absolute Error (MAE) values of 3…
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This study introduces a novel AI force field, namely graph-based pre-trained transformer force field (GPTFF), which can simulate arbitrary inorganic systems with good precision and generalizability. Harnessing a large trove of the data and the attention mechanism of transformer algorithms, the model can accurately predict energy, atomic forces, and stress with Mean Absolute Error (MAE) values of 32 meV/atom, 71 meV/Å, and 0.365 GPa, respectively. The dataset used to train the model includes 37.8 million single-point energies, 11.7 billion force pairs, and 340.2 million stresses. We also demonstrated that GPTFF can be universally used to simulate various physical systems, such as crystal structure optimization, phase transition simulations, and mass transport.
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Submitted 29 February, 2024;
originally announced February 2024.
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Topological Diagnosis of Strongly Correlated Electron Systems
Authors:
Chandan Setty,
Fang Xie,
Shouvik Sur,
Lei Chen,
Silke Paschen,
Maia G. Vergniory,
Jennifer Cano,
Qimiao Si
Abstract:
The intersection of electronic topology and strong correlations offers a rich platform to discover exotic quantum phases of matter and unusual materials. An overarching challenge that impedes the discovery is how to diagnose topology in strongly correlated settings, as exemplified by Mott insulators. Here, we develop a general framework to address this outstanding question and illustrate its power…
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The intersection of electronic topology and strong correlations offers a rich platform to discover exotic quantum phases of matter and unusual materials. An overarching challenge that impedes the discovery is how to diagnose topology in strongly correlated settings, as exemplified by Mott insulators. Here, we develop a general framework to address this outstanding question and illustrate its power in the case of Mott insulators. The concept of Green's function Berry curvature -- which is frequency dependent -- is introduced. We apply this notion in a system that contains symmetry-protected nodes in its noninteracting bandstructure; strong correlations drive the system into a Mott insulating state, creating contours in frequency-momentum space where the Green's function vanishes. The Green's function Berry flux of such zeros is found to be quantized, and is as such direct probe of the system's topology. Our framework allows for a comprehensive search of strongly correlated topological materials with Green's function topology.
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Submitted 27 November, 2023; v1 submitted 20 November, 2023;
originally announced November 2023.
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Kondo effect and its destruction in hetero-bilayer transition metal dichalcogenides
Authors:
Fang Xie,
Lei Chen,
Qimiao Si
Abstract:
Moiré structures, along with line-graph-based $d$-electron systems, represent a setting to realize flat bands. One form of the associated strong correlation physics is the Kondo effect. Here, we address the recently observed Kondo-driven heavy fermion state and its destruction in AB-stacked hetero-bilayer transition metal dichalcogenides, which can be controlled by the gate voltages. By studying a…
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Moiré structures, along with line-graph-based $d$-electron systems, represent a setting to realize flat bands. One form of the associated strong correlation physics is the Kondo effect. Here, we address the recently observed Kondo-driven heavy fermion state and its destruction in AB-stacked hetero-bilayer transition metal dichalcogenides, which can be controlled by the gate voltages. By studying an effective interacting Hamiltonian using the slave spin approach, we obtained a phase diagram with the total filling factor and the displacement field strength as the tunable parameters. In an extended range of the tunable displacement field, our numerical results show that the relative filling of the $d$ orbital, which is associated with the highest moiré band from the $\rm MoTe_2$ layer, is enforced to be $ν_d \approx 1$ by the interaction. This agrees with the experimental observation. We also argue that the observed high coherence temperature scale could be explained by the non-negligible bandwidth of the $d$ orbital. Our results set the stage to address the amplified quantum fluctuations that the Kondo effect may produce in these structures and new regimes that the systems open up for Kondo-destruction quantum criticality.
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Submitted 28 February, 2024; v1 submitted 31 October, 2023;
originally announced October 2023.
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MatChat: A Large Language Model and Application Service Platform for Materials Science
Authors:
Ziyi Chen,
Fankai Xie,
Meng Wan,
Yang Yuan,
Miao Liu,
Zongguo Wang,
Sheng Meng,
Yangang Wang
Abstract:
The prediction of chemical synthesis pathways plays a pivotal role in materials science research. Challenges, such as the complexity of synthesis pathways and the lack of comprehensive datasets, currently hinder our ability to predict these chemical processes accurately. However, recent advancements in generative artificial intelligence (GAI), including automated text generation and question-answe…
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The prediction of chemical synthesis pathways plays a pivotal role in materials science research. Challenges, such as the complexity of synthesis pathways and the lack of comprehensive datasets, currently hinder our ability to predict these chemical processes accurately. However, recent advancements in generative artificial intelligence (GAI), including automated text generation and question-answering systems, coupled with fine-tuning techniques, have facilitated the deployment of large-scale AI models tailored to specific domains. In this study, we harness the power of the LLaMA2-7B model and enhance it through a learning process that incorporates 13,878 pieces of structured material knowledge data. This specialized AI model, named MatChat, focuses on predicting inorganic material synthesis pathways. MatChat exhibits remarkable proficiency in generating and reasoning with knowledge in materials science. Although MatChat requires further refinement to meet the diverse material design needs, this research undeniably highlights its impressive reasoning capabilities and innovative potential in the field of materials science. MatChat is now accessible online and open for use, with both the model and its application framework available as open source. This study establishes a robust foundation for collaborative innovation in the integration of generative AI in materials science.
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Submitted 11 October, 2023;
originally announced October 2023.
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Electronic properties, correlated topology and Green's function zeros
Authors:
Chandan Setty,
Fang Xie,
Shouvik Sur,
Lei Chen,
Maia G. Vergniory,
Qimiao Si
Abstract:
There is extensive current interest about electronic topology in correlated settings. In strongly correlated systems, contours of Green's function zeros may develop in frequency-momentum space, and their role in correlated topology has increasingly been recognized. However, whether and how the zeros contribute to electronic properties is a matter of uncertainty. Here we address the issue in an exa…
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There is extensive current interest about electronic topology in correlated settings. In strongly correlated systems, contours of Green's function zeros may develop in frequency-momentum space, and their role in correlated topology has increasingly been recognized. However, whether and how the zeros contribute to electronic properties is a matter of uncertainty. Here we address the issue in an exactly solvable model for Mott insulator. We show that the Green's function zeros contribute to several physically measurable correlation functions, in a way that does not run into inconsistencies. In particular, the physical properties remain robust to chemical potential variations up to the Mott gap as it should be based on general considerations. Our work sets the stage for further understandings on the rich interplay among topology, symmetry and strong correlations.
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Submitted 28 September, 2023; v1 submitted 25 September, 2023;
originally announced September 2023.
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Metallic quantum criticality enabled by flat bands in a kagome lattice
Authors:
Lei Chen,
Fang Xie,
Shouvik Sur,
Haoyu Hu,
Silke Paschen,
Jennifer Cano,
Qimiao Si
Abstract:
Strange metals arise in a variety of platforms for strongly correlated electrons, ranging from the cuprates, heavy fermions to flat band systems. Motivated by recent experiments in kagome metals, we study a Hubbard model on a kagome lattice whose noninteracting limit contains flat bands. A Kondo lattice description is constructed, in which the degrees of freedom are exponentially localized molecul…
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Strange metals arise in a variety of platforms for strongly correlated electrons, ranging from the cuprates, heavy fermions to flat band systems. Motivated by recent experiments in kagome metals, we study a Hubbard model on a kagome lattice whose noninteracting limit contains flat bands. A Kondo lattice description is constructed, in which the degrees of freedom are exponentially localized molecular orbitals. We identify an orbital-selective Mott transition through an extended dynamical mean field theory of the effective model. The transition describes a quantum critical point at which quasiparticles are lost and strange metallicity emerges. Our theoretical work opens up a new route for realizing beyond-Landau quantum criticality and emergent quantum phases that it nucleates.
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Submitted 9 August, 2023; v1 submitted 18 July, 2023;
originally announced July 2023.
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Modeling intercalation chemistry with multi-redox reactions by sparse lattice models in disordered rocksalt cathodes
Authors:
Peichen Zhong,
Fengyu Xie,
Luis Barroso-Luque,
Liliang Huang,
Gerbrand Ceder
Abstract:
Modern battery materials can contain many elements with substantial site disorder, and their configurational state has been shown to be critical for their performance. The intercalation voltage profile is a critical parameter to evaluate the performance of energy storage. The application of commonly used cluster expansion techniques to model the intercalation thermodynamics of such systems from \t…
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Modern battery materials can contain many elements with substantial site disorder, and their configurational state has been shown to be critical for their performance. The intercalation voltage profile is a critical parameter to evaluate the performance of energy storage. The application of commonly used cluster expansion techniques to model the intercalation thermodynamics of such systems from \textit{ab-initio} is challenged by the combinatorial increase in configurational degrees of freedom as the number of species grows. Such challenges necessitate efficient generation of lattice models without over-fitting and proper sampling of the configurational space under charge balance in ionic systems. In this work, we introduce a combined approach that addresses these challenges by (1) constructing a robust cluster-expansion Hamiltonian using the sparse regression technique, including $\ell_0\ell_2$-norm regularization and structural hierarchy; and (2) implementing semigrand-canonical Monte Carlo to sample charge-balanced ionic configurations using the table-exchange method and an ensemble-average approach. These techniques are applied to a disordered rocksalt oxyfluoride Li$_{1.3-x}$Mn$_{0.4}$Nb$_{0.3}$O$_{1.6}$F$_{0.4}$ (LMNOF) which is part of a family of promising earth-abundant cathode materials. The simulated voltage profile is found to be in good agreement with experimental data and particularly provides a clear demonstration of the Mn and oxygen contribution to the redox potential as a function of Li content.
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Submitted 7 July, 2023;
originally announced July 2023.
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Crystal Structures and Phase Stability of the Li$_2$S-P$_2$S$_5$ System from First Principles
Authors:
Ronald L. Kam,
KyuJung Jun,
Luis Barroso-Luque,
Julia H. Yang,
Fengyu Xie,
Gerbrand Ceder
Abstract:
The Li$_2$S-P$_2$S$_5$ pseudo-binary system has been a valuable source of promising superionic conductors, with $α$-Li$_3$PS$_4$, $β$-Li$_3$PS$_4$, HT-Li$_7$PS$_6$, and Li$_7$P$_3$S$_{11}$ having excellent room temperature Li-ion conductivity > 0.1 mS/cm. The metastability of these phases at ambient temperature motivates a study to quantify thermodynamic accessibility. Through calculating the elec…
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The Li$_2$S-P$_2$S$_5$ pseudo-binary system has been a valuable source of promising superionic conductors, with $α$-Li$_3$PS$_4$, $β$-Li$_3$PS$_4$, HT-Li$_7$PS$_6$, and Li$_7$P$_3$S$_{11}$ having excellent room temperature Li-ion conductivity > 0.1 mS/cm. The metastability of these phases at ambient temperature motivates a study to quantify thermodynamic accessibility. Through calculating the electronic, configurational, and vibrational sources of free energy from first principles, a phase diagram of the crystalline Li$_2$S-P$_2$S$_5$ space is constructed. Well-established phase stability trends from experiments are recovered, such as polymorphic phase transitions in Li$_7$PS$_6$ and Li$_3$PS$_4$, and the metastability of Li$_7$P$_3$S$_{11}$ at high temperature. At ambient temperature, it is predicted that all superionic conductors in this space are indeed metastable, but thermodynamically accessible. Vibrational and configurational sources of entropy are shown to be essential towards describing the stability of superionic conductors. New details of the Li sublattices are revealed, and are found to be crucial towards accurately predicting configurational entropy. All superionic conductors contain significant configurational entropy, which suggests an inherent correlation between superionic conductivity and high configurational entropy.
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Submitted 3 July, 2023;
originally announced July 2023.
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Lu-H-N phase diagram from first-principles calculations
Authors:
Fankai Xie,
Tenglong Lu,
Ze Yu,
Yaxian Wang,
Zongguo Wang,
Sheng Meng,
Miao Liu
Abstract:
Using a comprehensive structure search and high-throughput first-principles calculations of 1483 compounds, this study presents the phase diagram of Lu-H-N. The formation energy landscape of Lu-H-N was derived and utilized to assess the thermodynamic stability of compounds. Results indicate that there are no stable Lu-H-N ternary structures in this system, but metastable ternary structures, such a…
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Using a comprehensive structure search and high-throughput first-principles calculations of 1483 compounds, this study presents the phase diagram of Lu-H-N. The formation energy landscape of Lu-H-N was derived and utilized to assess the thermodynamic stability of compounds. Results indicate that there are no stable Lu-H-N ternary structures in this system, but metastable ternary structures, such as Lu20H2N17 (C2/m), Lu2H2N (P3-m1), were observed with small Ehull (< 100 meV/atom). Moreover, applying hydrostatic pressure up to 10 GPa causes the energy convex hull of the Lu-H-N to shift its shape and stabilizes binary phases such as LuN9 and Lu10H21. Additionally, interstitial empty sites in LuH2 were noted, which may explain the formation of Lu10H21 and LuH3-xNy. To provide a basis for comparison, X-ray diffraction patterns and electronic structures of some compounds are also presented.
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Submitted 28 March, 2023; v1 submitted 21 March, 2023;
originally announced March 2023.
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Predicting structure-dependent Hubbard U parameters for assessing hybrid functional-level exchange via machine learning
Authors:
Zhendong Cao,
Guanghui Cai,
Fankai Xie,
Huaxian Jia,
Wei Liu,
Yaxian Wang,
Feng Liu,
Xinguo Ren,
Sheng Meng,
Miao Liu
Abstract:
DFT+U is a widely used treatment in the density functional theory (DFT) to deal with correlated materials that contain open-shell elements, whereby the quantitative and sometimes even qualitative failures of local and semilocal approximations can be corrected without much computational overhead. However, finding appropriate U parameters for a given system is non-trivial and usually requires comput…
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DFT+U is a widely used treatment in the density functional theory (DFT) to deal with correlated materials that contain open-shell elements, whereby the quantitative and sometimes even qualitative failures of local and semilocal approximations can be corrected without much computational overhead. However, finding appropriate U parameters for a given system is non-trivial and usually requires computationally intensive and cumbersome first-principles calculations. In this Letter, we address this issue by building a machine learning (ML) model to predict material-specific U parameters only from the structural information. An ML model is trained for the Mn-O chemical system by calibrating their DFT+U electronic structures with the hybrid functional results of more than Mn-O 3000 structures. The model allows us to determine a reliable U value (MAE=0.128 eV, R2=0.97) for any given structure at nearly no computational cost; yet the obtained U value is as good as that obtained from the conventional first-principles methods. Further analysis reveals that the U value is primarily determined by the local chemical structure, especially the bond lengths, and this property is well captured by the ML model developed in this work. This concept of the ML U model is universally applicable and can considerably ease the usage of the DFT+U method by providing structure-specific, readily accessible U values.
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Submitted 19 February, 2023;
originally announced February 2023.
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Symmetry constraints and spectral crossing in a Mott insulator with Green's function zeros
Authors:
Chandan Setty,
Shouvik Sur,
Lei Chen,
Fang Xie,
Haoyu Hu,
Silke Paschen,
Jennifer Cano,
Qimiao Si
Abstract:
Lattice symmetries are central to the characterization of electronic topology. Recently, it was shown that Green's function eigenvectors form a representation of the space group. This formulation has allowed the identification of gapless topological states even when quasiparticles are absent. Here we demonstrate the profundity of the framework in the extreme case, when interactions lead to a Mott…
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Lattice symmetries are central to the characterization of electronic topology. Recently, it was shown that Green's function eigenvectors form a representation of the space group. This formulation has allowed the identification of gapless topological states even when quasiparticles are absent. Here we demonstrate the profundity of the framework in the extreme case, when interactions lead to a Mott insulator, through a solvable model with long-range interactions. We find that both Mott poles and zeros are subject to the symmetry constraints, and relate the symmetry-enforced spectral crossings to degeneracies of the original non-interacting eigenstates. Our results lead to new understandings of topological quantum materials and highlight the utility of interacting Green's functions toward their symmetry-based design.
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Submitted 9 June, 2024; v1 submitted 31 January, 2023;
originally announced January 2023.
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Emergent flat band and topological Kondo semimetal driven by orbital-selective correlations
Authors:
Lei Chen,
Fang Xie,
Shouvik Sur,
Haoyu Hu,
Silke Paschen,
Jennifer Cano,
Qimiao Si
Abstract:
Flat electronic bands are expected to show proportionally enhanced electron correlations, which may generate a plethora of novel quantum phases and unusual low-energy excitations. They are increasingly being pursued in $d$-electron-based systems with crystalline lattices that feature destructive electronic interference, where they are often topological. Such flat bands, though, are generically loc…
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Flat electronic bands are expected to show proportionally enhanced electron correlations, which may generate a plethora of novel quantum phases and unusual low-energy excitations. They are increasingly being pursued in $d$-electron-based systems with crystalline lattices that feature destructive electronic interference, where they are often topological. Such flat bands, though, are generically located far away from the Fermi energy, which limits their capacity to partake in the low-energy physics. Here we show that electron correlations produce emergent flat bands that are pinned to the Fermi energy. We demonstrate this effect within a Hubbard model, in the regime described by Wannier orbitals where an effective Kondo description arises through orbital-selective Mott correlations. Moreover, the correlation effect cooperates with symmetry constraints to produce a topological Kondo semimetal. Our results motivate a novel design principle for Weyl Kondo semimetals in a new setting, viz. $d$-electron-based materials on suitable crystal lattices, and uncover interconnections among seemingly disparate systems that may inspire fresh understandings and realizations of correlated topological effects in quantum materials and beyond.
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Submitted 30 May, 2024; v1 submitted 15 December, 2022;
originally announced December 2022.
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Grand-canonical Monte-Carlo simulation methods for charge-decorated cluster expansions
Authors:
Fengyu Xie,
Peichen Zhong,
Luis Barroso-Luque,
Bin Ouyang,
Gerbrand Ceder
Abstract:
Monte-Carlo sampling of lattice model Hamiltonians is a well-established technique in statistical mechanics for studying the configurational entropy of crystalline materials. When species to be distributed on the lattice model carry charge, the charge balance constraint on the overall system prohibits single-site Metropolis exchanges in MC. In this article, we propose two methods to perform MC sam…
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Monte-Carlo sampling of lattice model Hamiltonians is a well-established technique in statistical mechanics for studying the configurational entropy of crystalline materials. When species to be distributed on the lattice model carry charge, the charge balance constraint on the overall system prohibits single-site Metropolis exchanges in MC. In this article, we propose two methods to perform MC sampling in the grand-canonical ensemble in the presence of a charge-balance constraint. The table-exchange method (TE) constructs small charge-conserving excitations, and the square-charge bias method (SCB) allows the system to temporarily drift away from charge neutrality. We illustrate the effect of internal hyper-parameters on the efficiency of these algorithms and suggest practical strategies on how to apply these algorithms to real applications.
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Submitted 3 October, 2022;
originally announced October 2022.
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Phase diagram of twisted bilayer graphene at filling factor $ν=\pm3$
Authors:
Fang Xie,
Jian Kang,
B. Andrei Bernevig,
Oskar Vafek,
Nicolas Regnault
Abstract:
We study the correlated insulating phases of twisted bilayer graphene (TBG) in the absence of lattice strain at integer filling $ν=\pm3$. Using the self-consistent Hartree-Fock method on a particle-hole symmetric model and allowing translation symmetry breaking terms, we obtain the phase diagram with respect to the ratio of $AA$ interlayer hop** $(w_0)$ and $AB$ interlayer hop** $(w_1)$. When…
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We study the correlated insulating phases of twisted bilayer graphene (TBG) in the absence of lattice strain at integer filling $ν=\pm3$. Using the self-consistent Hartree-Fock method on a particle-hole symmetric model and allowing translation symmetry breaking terms, we obtain the phase diagram with respect to the ratio of $AA$ interlayer hop** $(w_0)$ and $AB$ interlayer hop** $(w_1)$. When the interlayer hop** ratio is close to the chiral limit ($w_0/w_1 \lesssim 0.5$), a quantum anomalous Hall state with Chern number $ν_c = \pm 1$ can be observed consistent with previous studies. Around the realistic value $w_0/w_1 \approx 0.8$, we find a spin and valley polarized, translation symmetry breaking, state with $C_{2z}T$ symmetry, a charge gap and a doubling of the moiré unit cell, dubbed the $C_{2z}T$ stripe phase. The real space total charge distribution of this $C_{2z}T$ stripe phase in the flat band limit does not have modulation between different moiré unit cells, although the charge density in each layer is modulated, and the translation symmetry is strongly broken. Other symmetries, including $C_{2z}$, $C_{2x}$ and particle-hole symmetry $P$, and the topology of the $C_{2z}T$ stripe phase are also discussed in detail. We observed braiding and annihilation of the Dirac nodes by continuously turning on the order parameter to its fully self-consistent value, and provide a detailed explanation of the mechanism for the charge gap opening despite preserving $C_{2z}T$ and valley $U(1)$ symmetries. In the transition region between the quantum anomalous Hall phase and the $C_{2z}T$ stripe phase, we find an additional competing state with comparable energy corresponding to a phase with a tripling of the moiré unit cell.
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Submitted 27 February, 2023; v1 submitted 28 September, 2022;
originally announced September 2022.
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An $\ell_0\ell_2$-norm regularized regression model for construction of robust cluster expansions in multicomponent systems
Authors:
Peichen Zhong,
Tina Chen,
Luis Barroso-Luque,
Fengyu Xie,
Gerbrand Ceder
Abstract:
We introduce the $\ell_0\ell_2$-norm regularization and hierarchy constraints into linear regression for the construction of cluster expansion to describe configurational disorder in materials. The approach is implemented through mixed integer quadratic programming (MIQP). The $\ell_2$-norm regularization is used to suppress intrinsic data noise, while $\ell_0$-norm is used to penalize the number…
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We introduce the $\ell_0\ell_2$-norm regularization and hierarchy constraints into linear regression for the construction of cluster expansion to describe configurational disorder in materials. The approach is implemented through mixed integer quadratic programming (MIQP). The $\ell_2$-norm regularization is used to suppress intrinsic data noise, while $\ell_0$-norm is used to penalize the number of non-zero elements in the solution. The hierarchy relation between clusters imposes relevant physics and is naturally included by the MIQP paradigm. As such, sparseness and cluster hierarchy can be well optimized to obtain a robust, converged, and effective cluster interactions with improved physical meaning. We demonstrate the effectiveness of $\ell_0\ell_2$-norm regularization in two high-component disordered rocksalt cathode material systems, where we compare the cross-validation and convergence speed, reproduction of phase diagrams, voltage profiles, and Li-occupancy energies with those of the conventional $\ell_1$-norm regularized cluster expansion model.
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Submitted 27 June, 2022; v1 submitted 28 April, 2022;
originally announced April 2022.
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A universal model for the formation energy prediction of inorganic compounds
Authors:
Yingzong Liang,
Mingwei Chen,
Yanan Wang,
Huaxian Jia,
Tenglong Lu,
Fankai Xie,
Sheng Meng,
Miao Liu
Abstract:
Harnessing the recent advance in data science and materials science, it is feasible today to build predictive models for materials properties. In this study, we employ the data of high-throughput quantum mechanics calculations based on 170,714 inorganic crystalline compounds to train a machine learning model for formation energy prediction. Different from the previous work, our model reaches a fai…
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Harnessing the recent advance in data science and materials science, it is feasible today to build predictive models for materials properties. In this study, we employ the data of high-throughput quantum mechanics calculations based on 170,714 inorganic crystalline compounds to train a machine learning model for formation energy prediction. Different from the previous work, our model reaches a fairly good predictive ability (R2=0.982 and MAE=0.07 eVatom-1, DenseNet model) and meanwhile can be universally applied to the large phase space of inorganic materials. The improvement comes from several effective structure-dependent descriptors that are proposed to take the information of electronegativity and structure into account. This model can provide a useful tool to search for new materials in a vast phase space in a fast and cost-effective manner.
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Submitted 31 July, 2021;
originally announced August 2021.
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TSTG II: Projected Hartree-Fock Study of Twisted Symmetric Trilayer Graphene
Authors:
Fang Xie,
Nicolas Regnault,
Dumitru Călugăru,
B. Andrei Bernevig,
Biao Lian
Abstract:
The Hamiltonian of the magic-angle twisted symmetric trilayer graphene (TSTG) can be decomposed into a TBG-like flat band Hamiltonian and a high-velocity Dirac fermion Hamiltonian. We use Hartree-Fock mean field approach to study the projected Coulomb interacting Hamiltonian of TSTG developed in Călugăru et al. [Phys. Rev. B 103, 195411 (2021)] at integer fillings $ν=-3, -2, -1$ and $0$ measured f…
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The Hamiltonian of the magic-angle twisted symmetric trilayer graphene (TSTG) can be decomposed into a TBG-like flat band Hamiltonian and a high-velocity Dirac fermion Hamiltonian. We use Hartree-Fock mean field approach to study the projected Coulomb interacting Hamiltonian of TSTG developed in Călugăru et al. [Phys. Rev. B 103, 195411 (2021)] at integer fillings $ν=-3, -2, -1$ and $0$ measured from charge neutrality. We study the phase diagram with $w_0/w_1$, the ratio of $AA$ and $AB$ interlayer hop**s, and the displacement field, which introduces an interlayer potential $U$ and hybridizes the TBG-like bands with the Dirac bands. At small $U$, we find the ground states at all fillings $ν$ are in the same phases as the tensor products of a Dirac semimetal with the filling $ν$ TBG insulator ground states, which are spin-valley polarized at $ν=-3$, and fully (partially) intervalley coherent at $ν=-2,0$ ($ν=-1$) in the flat bands. An exception is $ν=-3$ with $w_0/w_1 \gtrsim 0.7$, which possibly become a metal with competing orders at small $U$ due to charge transfers between the Dirac and flat bands. At strong $U$ where the bandwidths exceed interactions, all the fillings $ν$ enter a metal phase with small or zero valley polarization and intervalley coherence. Lastly, at intermediate $U$, semimetal or insulator phases with zero intervalley coherence may arise for $ν=-2,-1,0$. Our results provide a simple picture for the electron interactions in TSTG systems, and reveal the connection between the TSTG and TBG ground states.
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Submitted 17 October, 2021; v1 submitted 28 June, 2021;
originally announced June 2021.
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TSTG I: Single-Particle and Many-Body Hamiltonians and Hidden Non-local Symmetries of Trilayer Moiré Systems with and without Displacement Field
Authors:
Dumitru Călugăru,
Fang Xie,
Zhi-Da Song,
Biao Lian,
Nicolas Regnault,
B. Andrei Bernevig
Abstract:
We derive the Hamiltonian for trilayer moiré systems with the Coulomb interaction projected onto the bands near the charge neutrality point. Motivated by the latest experimental results, we focus on the twisted symmetric trilayer graphene (TSTG) with a mirror-symmetry with respect to the middle layer. We provide a full symmetry analysis of the non-interacting Hamiltonian with a perpendicular displ…
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We derive the Hamiltonian for trilayer moiré systems with the Coulomb interaction projected onto the bands near the charge neutrality point. Motivated by the latest experimental results, we focus on the twisted symmetric trilayer graphene (TSTG) with a mirror-symmetry with respect to the middle layer. We provide a full symmetry analysis of the non-interacting Hamiltonian with a perpendicular displacement field coupling the band structure made otherwise of the twisted bilayer graphene (TBG) and the high velocity Dirac fermions, and we identify a hidden non-local symmetry of the problem. In the presence of this displacement field, we construct an approximate single-particle model, akin to the tripod model for TBG, capturing the essence of non-interacting TSTG. We also derive more quantitative perturbation schemes for the low-energy physics of TSTG with displacement field, obtaining the corresponding eigenstates. This allows us to obtain the Coulomb interaction Hamiltonian projected in the active band TSTG wavefunctions and derive the full many-body Hamiltonian of the system. We also provide an efficient parameterization of the interacting Hamiltonian. Finally, we show that the discrete symmetries at the single-particle level promote the $\mathrm{U} \left( 2 \right) \times \mathrm{U} \left( 2 \right)$ spin-valley symmetry to enlarged symmetry groups of the interacting problem under different limits. The interacting part of the Hamiltonian exhibits a large $\mathrm{U} \left( 4 \right) \times \mathrm{U} \left( 4 \right) \times \mathrm{U} \left( 4 \right) \times \mathrm{U} \left( 4 \right)$ symmetry in the chiral limit. Moreover, by identifying a new symmetry which we dub spatial many-body charge conjugation, we show that the physics of TSTG is symmetric around charge neutrality.
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Submitted 11 February, 2021;
originally announced February 2021.
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Open Momentum Space Method for Hofstadter Butterfly and the Quantized Lorentz Susceptibility
Authors:
Biao Lian,
Fang Xie,
B. Andrei Bernevig
Abstract:
We develop a generic $\mathbf{k}\cdot \mathbf{p}$ open momentum space method for calculating the Hofstadter butterfly of both continuum (Moiré) models and tight-binding models, where the quasimomentum is directly substituted by the Landau level (LL) operators. By taking a LL cutoff (and a reciprocal lattice cutoff for continuum models), one obtains the Hofstadter butterfly with in-gap spectral flo…
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We develop a generic $\mathbf{k}\cdot \mathbf{p}$ open momentum space method for calculating the Hofstadter butterfly of both continuum (Moiré) models and tight-binding models, where the quasimomentum is directly substituted by the Landau level (LL) operators. By taking a LL cutoff (and a reciprocal lattice cutoff for continuum models), one obtains the Hofstadter butterfly with in-gap spectral flows. For continuum models such as the Moiré model for twisted bilayer graphene, our method gives a sparse Hamiltonian, making it much more efficient than existing methods. The spectral flows in the Hofstadter gaps can be understood as edge states on a momentum space boundary, from which one can determine the two integers ($t_ν,s_ν$) of a gap $ν$ satisfying the Diophantine equation. The spectral flows can also be removed to obtain a clear Hofstadter butterfly. While $t_ν$ is known as the Chern number, our theory identifies $s_ν$ as a dual Chern number for the momentum space, which corresponds to a quantized Lorentz susceptibility $γ_{xy}=eBs_ν$.
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Submitted 23 April, 2021; v1 submitted 8 February, 2021;
originally announced February 2021.
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Evidence for a Monolayer Excitonic Insulator
Authors:
Yanyu Jia,
Pengjie Wang,
Cheng-Li Chiu,
Zhida Song,
Guo Yu,
Berthold Jäck,
Shiming Lei,
Sebastian Klemenz,
F. Alexandre Cevallos,
Michael Onyszczak,
Nadezhda Fishchenko,
Xiaomeng Liu,
Gelareh Farahi,
Fang Xie,
Yuanfeng Xu,
Kenji Watanabe,
Takashi Taniguchi,
B. Andrei Bernevig,
Robert J. Cava,
Leslie M. Schoop,
Ali Yazdani,
Sanfeng Wu
Abstract:
The interplay between topology and correlations can generate a variety of quantum phases, many of which remain to be explored. Recent advances have identified monolayer WTe2 as a promising material for doing so in a highly tunable fashion. The ground state of this two-dimensional (2D) crystal can be electrostatically tuned from a quantum spin Hall insulator (QSHI) to a superconductor. However, muc…
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The interplay between topology and correlations can generate a variety of quantum phases, many of which remain to be explored. Recent advances have identified monolayer WTe2 as a promising material for doing so in a highly tunable fashion. The ground state of this two-dimensional (2D) crystal can be electrostatically tuned from a quantum spin Hall insulator (QSHI) to a superconductor. However, much remains unknown about the gap-opening mechanism of the insulating state. Here we report evidence that the QSHI is also an excitonic insulator (EI), arising from the spontaneous formation of electron-hole bound states (excitons). We reveal the presence of an intrinsic insulating state at the charge neutrality point (CNP) in clean samples and confirm the correlated nature of this charge-neutral insulator by tunneling spectroscopy. We provide evidence against alternative scenarios of a band insulator or a localized insulator and support the existence of an EI phase in the clean limit. These observations lay the foundation for understanding a new class of correlated insulators with nontrivial topology and identify monolayer WTe2 as a promising candidate for exploring quantum phases of ground-state excitons.
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Submitted 3 January, 2022; v1 submitted 11 October, 2020;
originally announced October 2020.
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Twisted bilayer graphene.VI. An Exact Diagonalization Study of Twisted Bilayer Graphene at Non-Zero Integer Fillings
Authors:
Fang Xie,
Aditya Cowsik,
Zhi-Da Song,
Biao Lian,
B. Andrei Bernevig,
Nicolas Regnault
Abstract:
Using exact diagonalization, we study the projected Hamiltonian with Coulomb interaction in the 8 flat bands of first magic angle twisted bilayer graphene. Employing the U(4) (U(4)$\times$U(4)) symmetries in the nonchiral (chiral) flat band limit, we reduced the Hilbert space to an extent which allows for study around $ν=\pm 3,\pm2,\pm1$ fillings. In the first chiral limit $w_0/w_1=0$ where $w_0$…
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Using exact diagonalization, we study the projected Hamiltonian with Coulomb interaction in the 8 flat bands of first magic angle twisted bilayer graphene. Employing the U(4) (U(4)$\times$U(4)) symmetries in the nonchiral (chiral) flat band limit, we reduced the Hilbert space to an extent which allows for study around $ν=\pm 3,\pm2,\pm1$ fillings. In the first chiral limit $w_0/w_1=0$ where $w_0$ ($w_1$) is the $AA$ ($AB$) stacking hop**, we find that the ground-states at these fillings are extremely well-described by Slater determinants in a so-called Chern basis, and the exactly solvable charge $\pm1$ excitations found in [arXiv:2009.14200] are the lowest charge excitations up to system sizes $8\times8$ (for restricted Hilbert space) in the chiral-flat limit. We also find that the Flat Metric Condition (FMC) used in [arXiv:2009.11301,2009.11872,2009.12376,2009.13530,2009.14200] for obtaining a series of exact ground-states and excitations holds in a large parameter space. For $ν=-3$, the ground state is the spin and valley polarized Chern insulator with $ν_C=\pm1$ at $w_0/w_1\lesssim0.9$ (0.3) with (without) FMC. At $ν=-2$, we can only numerically access the valley polarized sector, and we find a spin ferromagnetic phase when $w_0/w_1\gtrsim0.5t$ where $t\in[0,1]$ is the factor of rescaling of the actual TBG bandwidth, and a spin singlet phase otherwise, confirming the perturbative calculation [arXiv:2009.13530]. The analytic FMC ground state is, however, predicted in the intervalley coherent sector which we cannot access [arXiv:2009.13530]. For $ν=-3$ with/without FMC, when $w_0/w_1$ is large, the finite-size gap $Δ$ to the neutral excitations vanishes, leading to phase transitions. Further analysis of the ground state momentum sectors at $ν=-3$ suggests a competition among (nematic) metal, momentum $M_M$ ($π$) stripe and $K_M$-CDW orders at large $w_0/w_1$.
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Submitted 23 April, 2022; v1 submitted 1 October, 2020;
originally announced October 2020.
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Twisted Bilayer Graphene V: Exact Analytic Many-Body Excitations in Twisted Bilayer Graphene Coulomb Hamiltonians: Charge Gap, Goldstone Modes and Absence of Cooper Pairing
Authors:
B. Andrei Bernevig,
Biao Lian,
Aditya Cowsik,
Fang Xie,
Nicolas Regnault,
Zhi-Da Song
Abstract:
We find exact analytic expressions for the energies and wavefunctions of the charged and neutral excitations above the exact ground states (at rational filling per unit cell) of projected Coulomb Hamiltonians in twisted bilayer graphene. Our exact expressions are valid for any form of the Coulomb interaction and any form of $AA$ and $AB/BA$ tunneling. The single charge excitation energy is a convo…
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We find exact analytic expressions for the energies and wavefunctions of the charged and neutral excitations above the exact ground states (at rational filling per unit cell) of projected Coulomb Hamiltonians in twisted bilayer graphene. Our exact expressions are valid for any form of the Coulomb interaction and any form of $AA$ and $AB/BA$ tunneling. The single charge excitation energy is a convolution of the Coulomb potential with a quantum geometric tensor of the TBG bands. The neutral excitations are (high-symmetry group) magnons, and their dispersion is analytically calculated in terms of the form factors of the active bands in TBG. The two-charge excitation energy and wavefunctions are also obtained, and a sufficient condition on the graphene eigenstates for obtaining a Cooper-pair from Coulomb interactions is obtained. For the actual TBG bands at the first magic angle, we can analytically show that the Cooper pair binding energy is zero in all such projected Coulomb models, implying that either phonons and/or non-zero kinetic energy are needed for superconductivity. Since the [Phys. Rev. Lett. 122, 246401] showed that the kinetic energy bounds on the superexchange energy are less $10^{-3}$ in Coulomb units, the phonon mechanism becomes then very likely. If nonetheless the superconductivity is due to kinetic terms which render the bands non-flat, one prediction of our theory is that the highest $T_c$ would not occur at the highest DOS.
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Submitted 28 April, 2022; v1 submitted 29 September, 2020;
originally announced September 2020.
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Reversible Engineering of Topological Insulator Surface State Conductivity through Optical Excitation
Authors:
Faji Xie,
Zhen Lian,
Shuai Zhang,
Tianmeng Wang,
Shengnan Miao,
Zhiyong Song,
Zhe Ying,
Xing-Chen Pan,
Mingsheng Long,
Minhao Zhang,
Fucong Fei,
Weida Hu,
Geliang Yu,
Fengqi Song,
Ting-Ting Kang,
Su-Fei Shi
Abstract:
Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this purpose, while non-ideal interfaces often limit the performance. The topological insulator is a natural hybrid system, with the surface states hosting high-mobili…
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Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this purpose, while non-ideal interfaces often limit the performance. The topological insulator is a natural hybrid system, with the surface states hosting high-mobility Dirac fermions and the small-bandgap semiconducting bulk state strongly absorbing light. In this work, we show a large photocurrent response from a field effect transistor device based on intrinsic topological insulator Sn-Bi1.1Sb0.9Te2S. The photocurrent response is non-volatile and sensitively depends on the initial Fermi energy of the surface state, and it can be erased by controlling the gate voltage. Our observations can be explained with a remote photo-do** mechanism, in which the light excites the defects in the bulk and frees the localized carriers to the surface state. This photodo** modulates the surface state conductivity without compromising the mobility, and it also significantly modify the quantum Hall effect of the surface state. Our work thus illustrates a route to reversibly manipulate the surface states through optical excitation, shedding light into utilizing topological surface states for quantum optoelectronics.
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Submitted 21 September, 2020;
originally announced September 2020.
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A Gd@C82-based single molecular electret device with switchable electrical polarization
Authors:
Kangkang Zhang,
Cong Wang,
Minhao Zhang,
Zhanbin Bai,
Fangfang Xie,
Yuanzhi Tan,
Yilv Guo,
Kuo-Juei Hu,
Lu Cao,
Shuai Zhang,
Xuecou Tu,
Lin Kang,
Jian Chen,
Peiheng Wu,
Xuefeng Wang,
**lan Wang,
Junming Liu,
Baigeng Wang,
Guanghou Wang,
Suyuan Xie,
Wei Ji,
Su-Fei Shi,
M. A. Reed,
Fengqi Song
Abstract:
Single molecular electrets exhibiting single molecule electric polarization switching have been long desired as a platform for extremely small non-volatile storage devices, although it is controversial because of the poor stability of single molecular electric dipoles. Here we study the single molecular device of GdC82, where the encapsulated Gd atom forms a charge center, and we have observed a g…
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Single molecular electrets exhibiting single molecule electric polarization switching have been long desired as a platform for extremely small non-volatile storage devices, although it is controversial because of the poor stability of single molecular electric dipoles. Here we study the single molecular device of GdC82, where the encapsulated Gd atom forms a charge center, and we have observed a gate controlled switching behavior between two sets of single electron transport stability diagrams. The switching is operated in a hysteresis loop with a coercive gate field of around 0.5Vnm. Theoretical calculations have assigned the two conductance diagrams to corresponding energy levels of two states that the Gd atom is trapped at two different sites of the C82 cage, which possess two different permanent electrical dipole orientations. The two dipole states are stabilized by the anisotropic energy and separated by a transition energy barrier of 70 meV. Such switching is then accessed to the electric field driven reorientation of individual dipole while overcoming the barriers by the coercive gate field, and demonstrates the creation of a single molecular electret.
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Submitted 24 March, 2020;
originally announced March 2020.
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Topology-Bounded Superfluid Weight In Twisted Bilayer Graphene
Authors:
Fang Xie,
Zhida Song,
Biao Lian,
B. Andrei Bernevig
Abstract:
While regular flat bands are good for enhancing the density of states and hence the gap, they are detrimental to the superfluid weight. We show that the predicted nontrivial topology of the two lowest flat bands of twisted bilayer graphene plays an important role in the enhancement of the superfluid weight and hence of superconductivity. We derive the superfluid weight (phase stiffness) of the TBL…
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While regular flat bands are good for enhancing the density of states and hence the gap, they are detrimental to the superfluid weight. We show that the predicted nontrivial topology of the two lowest flat bands of twisted bilayer graphene plays an important role in the enhancement of the superfluid weight and hence of superconductivity. We derive the superfluid weight (phase stiffness) of the TBLG superconducting flat bands with a uniform pairing, and show that it can be expressed as an integral of the Fubini-Study metric of the flat bands. This mirrors results already obtained for nonzero Chern number bands even though the TBLG flat bands have zero Chern number. We further show the metric integral is lower bounded by the topological $C_{2z}T$ Wilson loop winding number of the TBLG flat bands, which renders the superfluid weight has a topological lower bound proportional to the pairing gap. In contrast, trivial flat bands have a zero superfluid weight. The superfluid weight is crucial in determining the BKT transition temperature of the superconductor. Based on the transition temperature measured in TBLG experiments, we estimate the topological contribution of the superfluid weight in TBLG.
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Submitted 5 June, 2019;
originally announced June 2019.
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Experimental observation of the gate-controlled reversal of the anomalous Hall effect in the intrinsic magnetic topological insulator MnBi2Te4 device
Authors:
Shuai Zhang,
Rui Wang,
Xuepeng Wang,
Boyuan Wei,
Huaiqiang Wang,
Gang Shi,
Feng Wang,
Bin Jia,
Yi** Ouyang,
Bo Chen,
Qianqian Liu,
Faji Xie,
Fucong Fei,
Minhao Zhang,
Xuefeng Wang,
Di Wu,
Xiangang Wan,
Fengqi Song,
Haijun Zhang,
Baigeng Wang
Abstract:
Here we report the reserved anomalous Hall effect (AHE) in the 5-septuple-layer van der Waals device of the intrinsic magnetic topological insulator MnBi2Te4. By employing the top/bottom gate, a negative AHE loop gradually decreases to zero and changes to a reversed sign. The reversed AHE exhibits distinct coercive fields and temperature dependence from the previous AHE. It reaches the maximum ins…
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Here we report the reserved anomalous Hall effect (AHE) in the 5-septuple-layer van der Waals device of the intrinsic magnetic topological insulator MnBi2Te4. By employing the top/bottom gate, a negative AHE loop gradually decreases to zero and changes to a reversed sign. The reversed AHE exhibits distinct coercive fields and temperature dependence from the previous AHE. It reaches the maximum inside the gap of the Dirac cone. The newly-seen reversed AHE is attributed to the competition of the intrinsic Berry curvature and the Dirac-gap enhanced extrinsic skew scattering. Its gate-controlled switching contributes a scheme for the topological spin field-effect transistors.
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Submitted 12 May, 2019;
originally announced May 2019.
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Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2
Authors:
Qianqian Liu,
Bo Chen,
Boyuan Wei,
Shuai Zhang,
Minhao Zhang,
Faji Xie,
Muhammad Naveed,
Fucong Fei,
Baigen Wang,
Fengqi Song
Abstract:
Dirac and Weyl semimetals are new discovered topological nontrivial materials with the linear band dispersions around the Dirac/Weyl points. When applying non-orthogonal electric current and magnetic field, an exotic phenomenon called chiral anomaly arises and negative longitudinal resistance can be detected. Recently, a new phenomenon named planer Hall effect (PHE) is considered to be another ind…
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Dirac and Weyl semimetals are new discovered topological nontrivial materials with the linear band dispersions around the Dirac/Weyl points. When applying non-orthogonal electric current and magnetic field, an exotic phenomenon called chiral anomaly arises and negative longitudinal resistance can be detected. Recently, a new phenomenon named planer Hall effect (PHE) is considered to be another indication of chiral anomaly which has been observed in many topological semimetals. However, it still remains a question that is the PHE only attributed to chiral anomaly? Here we demonstrate the PHE in a new-discovered type-II Dirac semimetal NiTe2 by low temperature transport. However, after detailed analysis, we conclude that the PHE results from the trivial orbital magnetoresistance. This work reveals that PHE is not a sufficient condition of chiral anomaly and one need to take special care of other non-topological contribution in such studies.
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Submitted 7 January, 2019;
originally announced January 2019.
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Phase transition and anomalous scaling in the quantum Hall transport of topological insulator Sn-Bi1.1Sb0.9Te2S devices
Authors:
Faji Xie,
Shuai Zhang,
Qianqian Liu,
Chuanying Xi,
Ting-Ting Kang,
Rui Wang,
Boyuan Wei,
Xing-Chen Pan,
Minhao Zhang,
Fucong Fei,
Xuefeng Wang,
Li Pi,
Geliang L. Yu,
Baigeng Wang,
Fengqi Song
Abstract:
The scaling physics of quantum Hall transport in optimized topological insulators with a plateau precision of ~1/1000 e2/h is considered. Two exponential scaling regimes are observed in temperature-dependent transport dissipation, one of which accords with thermal activation behavior with a gap of 2.8 meV (> 20 K), the other being attributed to variable range hop** (1-20 K). Magnetic field-drive…
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The scaling physics of quantum Hall transport in optimized topological insulators with a plateau precision of ~1/1000 e2/h is considered. Two exponential scaling regimes are observed in temperature-dependent transport dissipation, one of which accords with thermal activation behavior with a gap of 2.8 meV (> 20 K), the other being attributed to variable range hop** (1-20 K). Magnetic field-driven plateau-to-plateau transition gives scaling relations of (dR$_{xy}$/dB)$^{max}$ \propto T$^{-κ}$ and \DeltaB$^{-1}$ \propto T$^{-κ}$ with a consistent exponent of κ~ 0.2, which is half the universal value for a conventional two-dimensional electron gas. This is evidence of percolation assisted by quantum tunneling, and reveals the dominance of electron-electron interaction of the topological surface states.
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Submitted 12 December, 2018;
originally announced December 2018.
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The Landau Level of Fragile Topology
Authors:
Biao Lian,
Fang Xie,
B. Andrei Bernevig
Abstract:
We study the Hofstadter butterfly and Landau levels of the twisted bilayer graphene (TBG). We show that the nontrivial fragile topology of the lowest two bands near the charge neutral point makes their Hofstadter butterfly generically connected with higher bands, closing the gap between the first and second conduction (valence) bands at a certain magnetic flux per unit cell. We also develop a mome…
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We study the Hofstadter butterfly and Landau levels of the twisted bilayer graphene (TBG). We show that the nontrivial fragile topology of the lowest two bands near the charge neutral point makes their Hofstadter butterfly generically connected with higher bands, closing the gap between the first and second conduction (valence) bands at a certain magnetic flux per unit cell. We also develop a momentum space method for calculating the TBG Hofstadter butterfly, from which we identify three phases where the Hofstadter butterflies of the lowest two bands and the higher bands are connected in different ways. We show this leads to a crossing between the $ν=4$ Landau fan from the charge neutral point and the zero field band gap at one flux per Moiré unit cell, which corresponds to a magnetic field $25θ^2$T (twist angle $θ$ in degrees). This provides an experimentally testable feature of the fragile topology. In general, we expect it to be a generic feature that the Hofstadter butterfly of topological bands are connected with the Hofstadter spectra of other bands. We further show the TBG band theory with Zeeman splitting being the most sizable splitting could result in Landau fans at the charge neutral point and half fillings near the magic angle, and we predict their variations under an in-plane magnetic field.
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Submitted 29 April, 2020; v1 submitted 28 November, 2018;
originally announced November 2018.
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Diagnosing the magnetic field-tuned symmetry nature of the topological electrons by conductance fluctuations in bulk-insulating BiSbTeSe2 devices
Authors:
Shuai Zhang,
Faji Xie,
Xing-Chen Pan,
Yuyuan Qin,
Lu Cao,
Xuefeng Wang,
Fengqi Song,
Baigeng Wang
Abstract:
We extract the quantum conductance fluctuations and study its magnetic field dependence in the gate-dependent transport of the topological electrons in bulk-insulating BiSbTeSe2 devices. While increasing the magnetic field from 0 to 12 Tesla, the fluctuation magnitudes are found reduced by a ratio of sqrt(2) and form a quantized step. The step is observed both in n-type and p-type transport. It is…
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We extract the quantum conductance fluctuations and study its magnetic field dependence in the gate-dependent transport of the topological electrons in bulk-insulating BiSbTeSe2 devices. While increasing the magnetic field from 0 to 12 Tesla, the fluctuation magnitudes are found reduced by a ratio of sqrt(2) and form a quantized step. The step is observed both in n-type and p-type transport. It is also confirmed in the nonlocal measurements. This essentially demonstrates the breaking of the time reversal symmetry of the three-dimensional Z2 topological insulators.
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Submitted 9 December, 2017;
originally announced December 2017.
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Orientational Phase Transitions and the Assembly of Viral Capsids
Authors:
Sanjay Dharmavaram,
Fangming Xie,
William Klug,
Joseph Rudnick,
Robijn Bruinsma
Abstract:
We present a generalized Landau-Brazovskii free energy for the solidification of chiral molecules on a spherical surface in the context of the assembly of viral shells. We encounter two types of icosahedral solidification transitions. The first type is a conventional first-order phase transition from the uniform to the icosahedral state. It can be described by a single icosahedral spherical harmon…
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We present a generalized Landau-Brazovskii free energy for the solidification of chiral molecules on a spherical surface in the context of the assembly of viral shells. We encounter two types of icosahedral solidification transitions. The first type is a conventional first-order phase transition from the uniform to the icosahedral state. It can be described by a single icosahedral spherical harmonic of even $l$. The chiral pseudo-scalar term in the free energy creates secondary terms with chiral character but it does not affect the thermodynamics of the transition. The second type, associated with icosahedral spherical harmonics with odd $l$, is anomalous. Pure odd $l$ icosahedral states are unstable but stability is recovered if admixture with the neighboring $l+1$ icosahedral spherical harmonic is included, generated by the non-linear terms. This is in conflict with the principle of Landau theory that symmetry-breaking transitions are characterized by only a \textit{single} irreducible representation of the symmetry group of the uniform phase and we argue that this principle should be removed from Landau theory. The chiral term now directly affects the transition because it lifts the degeneracy between two isomeric mixed-$l$ icosahedral states. A direct transition is possible only over a limited range of parameters. Outside this range, non-icosahedral states intervene. For the important case of capsid assembly dominated by $l=15$, the intervening states are found to be based on octahedral symmetry.
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Submitted 16 January, 2017;
originally announced January 2017.
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Landau Theory and the Emergence of Chirality in Viral Capsids
Authors:
Sanjay Dharmavaram,
Fangming Xie,
William Klug,
Joseph Rudnick,
Robijn Bruinsma
Abstract:
We present a generalized Landau-Brazovskii theory for the solidification of chiral molecules on a spherical surface. With increasing sphere radius one encounters first intervals where robust achiral density modulations appear with icosahedral symmetry via first-order transitions. Next, one en- counters intervals where fragile but stable icosahedral structures still can be constructed but only by s…
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We present a generalized Landau-Brazovskii theory for the solidification of chiral molecules on a spherical surface. With increasing sphere radius one encounters first intervals where robust achiral density modulations appear with icosahedral symmetry via first-order transitions. Next, one en- counters intervals where fragile but stable icosahedral structures still can be constructed but only by superposition of multiple irreducible representations. Chiral icoshedral structures appear via continuous or very weakly first-order transitions. Outside these parameter intervals, icosahedral symmetry is broken along a three-fold axis or a five-fold axis. The predictions of the theory are compared with recent numerical simulations.
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Submitted 8 June, 2016;
originally announced June 2016.
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The Synthesis, Structure and Electronic Properties of a Lead-Free Hybrid Inorganic-Organic Double Perovskite (MA)2KBiCl6 (MA = methylammonium)
Authors:
Fengxia Wei,
Zeyu Deng,
Shi**g Sun,
Fei Xie,
Gregor Kieslich,
Donald M. Evans,
Michael A. Carpenter,
Paul D. Bristowe,
Anthony K. Cheetham
Abstract:
In a search for Lead-free materials that could be used as alternatives to the hybrid perovskites,(MA)PbX3, in photovoltaic applications, we have discovered a hybrid double perovskite, (MA)2KBiCl6, which shows striking similarities to the lead analogues. Spectroscopic measurements and nanoindentation studies are combined with density functional calculations to reveal the properties of this interest…
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In a search for Lead-free materials that could be used as alternatives to the hybrid perovskites,(MA)PbX3, in photovoltaic applications, we have discovered a hybrid double perovskite, (MA)2KBiCl6, which shows striking similarities to the lead analogues. Spectroscopic measurements and nanoindentation studies are combined with density functional calculations to reveal the properties of this interesting system.
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Submitted 1 March, 2016;
originally announced March 2016.
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Synthesis, Crystal Structure and Properties of a Perovskite-Related Bismuth Phase, (NH4)3Bi2I9
Authors:
Shi**g Sun,
Satoshi Tominaka,
Jung-Hoon Lee,
Fei Xie,
Paul D. Bristowe,
Anthony K. Cheetham
Abstract:
Organic-inorganic halide perovskites, especially methylammonium lead halide, have recently led to a remarkable breakthrough in photovoltaic devices. However, due to the environmental and stability concerns of the heavy metal, lead, in these perovskite based solar cells, research in the non-lead perovskite structures have been attracting increasing attention. In this study, a layered perovskite-lik…
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Organic-inorganic halide perovskites, especially methylammonium lead halide, have recently led to a remarkable breakthrough in photovoltaic devices. However, due to the environmental and stability concerns of the heavy metal, lead, in these perovskite based solar cells, research in the non-lead perovskite structures have been attracting increasing attention. In this study, a layered perovskite-like architecture, (NH4)3Bi2I9, was prepared in solution and the structure was solved by single crystal X-ray diffraction. The results from DFT calculations showed the significant lone pair effect of the bismuth ion and the band gap was measured as around 2.04 eV, which is lower than the band gap of CH3NH3PbBr3. Conductivity measurement was also performed to examine the potential in the applications as an alternative to the lead containing perovskites.
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Submitted 27 September, 2015;
originally announced September 2015.
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Degradation by Exposure of Co-Evaporated CH3NH3PbI3 Thin Films
Authors:
Youzhen Li,
Xuemei Xu,
Chenggong Wang,
Congcong Wang,
Fangyan Xie,
Yongli Gao
Abstract:
Degradation of co-evaporated CH3NH3PbI3 thin films was investigated with x-ray photoelectron spectroscopy (XPS) and x-ray diffraction (XRD) as the films were subjected to exposure of oxygen, dry air, ambient, or H2O. The co-evaporated thin films have consistent stoichiometry and crystallinity suitable for detailed surface analysis. The results indicate that CH3NH3PbI3 is not sensitive to oxygen. E…
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Degradation of co-evaporated CH3NH3PbI3 thin films was investigated with x-ray photoelectron spectroscopy (XPS) and x-ray diffraction (XRD) as the films were subjected to exposure of oxygen, dry air, ambient, or H2O. The co-evaporated thin films have consistent stoichiometry and crystallinity suitable for detailed surface analysis. The results indicate that CH3NH3PbI3 is not sensitive to oxygen. Even after 10^13 Langmuire (L, one L equals 10^-6 torr sec) oxygen exposure, no O atoms could be found on the surface. The film is not sensitive to dry air as well. A reaction threshold of about 2*10^10 L is found for H2O exposure, below which no CH3NH3PbI3 degradation takes place and the H2O acts as an n-dopant. Above the threshold, the film begins to decompose, and the amount of N and I decrease quickly, leaving the surface with PbI2, amorphous C and O contamination.
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Submitted 21 June, 2015;
originally announced June 2015.
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Degradation of Co-Evaporated Perovskite Thin Film in Air
Authors:
Congcong Wang,
Youzhen Li,
Xuemei Xu,
Chenggong Wang,
Fangyan Xie,
Yongli Gao
Abstract:
Methylammonium lead halide perovskites have been developed as highly promising materials to fabricate efficient solar cells in the past few years. The real impact to energy applications relies on the understanding and controlling of the stability of the material. We investigated the degradation of CH3NH3PbI3 by air exposure using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and…
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Methylammonium lead halide perovskites have been developed as highly promising materials to fabricate efficient solar cells in the past few years. The real impact to energy applications relies on the understanding and controlling of the stability of the material. We investigated the degradation of CH3NH3PbI3 by air exposure using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The stoichiometric sample was grown with co-evaporation of PbI2 and CH3NH3I on a Au coated Si wafer. It was found that the perovskite thin film gradually turned to PbI2 in air, accompanied with complete removal of N and substantial reduction of I. It was also observed that PbI2 crystallization roughened the film and resulted in a partial exposure of the Au substrate.
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Submitted 8 June, 2015;
originally announced June 2015.
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Oscillation of the spin-currents of cold atoms on a ring due to light-induced spin-orbit coupling
Authors:
W. F. Xie,
Y. Z. He,
C. G. Bao
Abstract:
The evolution of two-component cold atoms on a ring with spin-orbit coupling has been studied analytically for the case with N noninteracting particles. Then, the effect of interaction is evaluated numerically via a two-body system. Two cases are considered: (i) Starting from a ground state the evolution is induced by a sudden change of the laser field, and (ii) Starting from a superposition state…
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The evolution of two-component cold atoms on a ring with spin-orbit coupling has been studied analytically for the case with N noninteracting particles. Then, the effect of interaction is evaluated numerically via a two-body system. Two cases are considered: (i) Starting from a ground state the evolution is induced by a sudden change of the laser field, and (ii) Starting from a superposition state. Oscillating persistent spin-currents have been found. A set of formulae have been derived to describe the period and amplitude of the oscillation. Based on these formulae the oscillation can be well controlled via adjusting the parameters of the laser beams. In particular, it is predicted that movable stripes might emerge on the ring.
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Submitted 10 May, 2015;
originally announced May 2015.
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Structural and magnetic properties of the new cobaltate series (BaSr)4-xLa2xCo4O15
Authors:
V. O. Garlea,
R. **,
E. Garlea,
G. Ehlers,
E. Mamontov,
D. B. Myers,
F. Xie,
R. Custelcean
Abstract:
We report the structural and magnetic properties of a new class of cobaltates with the chemical formula (BaSr)4-xLa2xCo4O15 (x = 0, 0.5 and 1). These compounds crystallize in a hexagonal structure in which cobalt ions are distributed among two distinct crystallographic sites with different oxygen coordination. Three Co-O tetrahedra and one octahedron are linked by shared oxygen atoms to form Co4O1…
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We report the structural and magnetic properties of a new class of cobaltates with the chemical formula (BaSr)4-xLa2xCo4O15 (x = 0, 0.5 and 1). These compounds crystallize in a hexagonal structure in which cobalt ions are distributed among two distinct crystallographic sites with different oxygen coordination. Three Co-O tetrahedra and one octahedron are linked by shared oxygen atoms to form Co4O15 clusters, which are packed together into a honeycomb-like network. Partial substitution of Sr and/or Ba atoms by La allows one to adjust the degree of Co valence mixing, but all compositions remain subject to a random distribution of charge. Magnetic susceptibility together with neutron scattering measurements reveal that all studied specimens are characterized by competing ferro- and antiferro-magnetic exchange interactions that give rise to a three dimensional Heisenberg spin-glass state. Neutron spectroscopy shows a clear trend of slowing down of spin-dynamics upon increasing La concentration, suggesting a reduction in charge randomness in the doped samples.
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Submitted 13 September, 2012;
originally announced September 2012.
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Conductance of Atomic-Sized Lead Contacts in an Electrochemical Environment
Authors:
F. -Q. Xie,
F. Hüser,
F. Pauly,
Ch. Obermair,
G. Schön,
Th. Schimmel
Abstract:
Atomic-sized lead (Pb) contacts are deposited and dissolved in an electrochemical environment, and their transport properties are measured. Due to the electrochemical fabrication process, we obtain mechanically unstrained contacts and conductance histograms with sharply resolved, individual peaks. Charge transport calculations based on density functional theory (DFT) for various ideal Pb contact…
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Atomic-sized lead (Pb) contacts are deposited and dissolved in an electrochemical environment, and their transport properties are measured. Due to the electrochemical fabrication process, we obtain mechanically unstrained contacts and conductance histograms with sharply resolved, individual peaks. Charge transport calculations based on density functional theory (DFT) for various ideal Pb contact geometries are in good agreement with the experimental results. Depending on the atomic configuration, single-atom-wide contacts of one and the same metal yield very different conductance values.
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Submitted 23 February, 2010;
originally announced February 2010.
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Independently switchable atomic quantum transistors by reversible contact reconstruction
Authors:
F. -Q. Xie,
R. Maul,
A. Augenstein,
Ch. Obermair,
E. B. Starikov,
G. Schoen,
Th. Schimmel,
W. Wenzel
Abstract:
The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable, self-stabilizing reconstruction of the electrode contacts at the atomic level: While the device is manufactured by electrochemical deposition, it operates ent…
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The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable, self-stabilizing reconstruction of the electrode contacts at the atomic level: While the device is manufactured by electrochemical deposition, it operates entirely on the basis of mechanical effects of the solid-liquid interface. We analyze mechanically and thermally stable metallic junctions with a predefined quantized conductance of 1-5 G_0 in experiment and atomistic simulation. Atomistic modeling of structural and conductance properties elucidates bistable electrode reconstruction as the underlying mechanism of the device. Independent room-temperature operation of two transistors at low voltage demonstrates intriguing perspectives for quantum electronics and logics on the atomic scale.
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Submitted 6 April, 2009;
originally announced April 2009.
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Pre-selectable integer quantum conductance of electrochemically fabricated silver point contacts
Authors:
F. -Q. Xie,
R. Maul,
S. Brendelberger,
Ch. Obermair,
E. B. Starikov,
W. Wenzel,
G. Schoen,
Th. Schimmel
Abstract:
The controlled fabrication of well-ordered atomic-scale metallic contacts is of great interest: it is expected that the experimentally observed high percentage of point contacts with a conductance at non-integer multiples of the conductance quantum G_0 = 2e^2/h in simple metals is correlated to defects resulting from the fabrication process. Here we demonstrate a combined electrochemical deposit…
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The controlled fabrication of well-ordered atomic-scale metallic contacts is of great interest: it is expected that the experimentally observed high percentage of point contacts with a conductance at non-integer multiples of the conductance quantum G_0 = 2e^2/h in simple metals is correlated to defects resulting from the fabrication process. Here we demonstrate a combined electrochemical deposition and annealing method which allows the controlled fabrication of point contacts with pre-selectable integer quantum conductance. The resulting conductance measurements on silver point contacts are compared with tight-binding-like conductance calculations of modeled idealized junction geometries between two silver crystals with a predefined number of contact atoms.
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Submitted 24 July, 2008;
originally announced July 2008.