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Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence
Authors:
Jakub Iwański,
Krzysztof P. Korona,
Mateusz Tokarczyk,
Grzegorz Kowalski,
Aleksandra K. Dąbrowska,
Piotr Tatarczak,
Izabela Rogala,
Marta Bilska,
Maciej Wójcik,
Sławomir Kret,
Anna Reszka,
Bogdan J. Kowalski,
Song Li,
Anton Pershin,
Adam Gali,
Johannes Binder,
Andrzej Wysmołek
Abstract:
Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While commonly referred to as hexagonal BN (hBN), the sp$^2$-bonded BN atomic planes can also arrange in other configurations like Bernal (bBN) or rhombohedral (rBN) stacking orders. Variations in the orientation and translation of…
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Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While commonly referred to as hexagonal BN (hBN), the sp$^2$-bonded BN atomic planes can also arrange in other configurations like Bernal (bBN) or rhombohedral (rBN) stacking orders. Variations in the orientation and translation of successive atomic layers lead to changes in crystal symmetry, potentially resulting in piezoelectric, pyroelectric or ferroelectric effects. However, distinguishing between different polytypes using conventional methods like X-ray diffraction or Raman spectroscopy presents a significant challenge. In this work, we demonstrate that the optical response of the 4.1 eV defect can serve as an indicator of the polytype. To this end, we study BN samples grown by metalorganic vapor phase epitaxy (MOVPE), which contain different polytypes. The identification of the polytypes was achieved by X-ray diffraction and transmission electron microscopy. Photoluminescence and cathodoluminescence measurements with a high spatial resolution allowed for the deconvolution of the signal into two components from which we can extract a zero-phonon line (ZPL) at 4.096 eV (302.6 nm) for hBN and 4.143 eV (299.2 nm) for rBN. We performed calculations that enable us to identify the defect as a carbon dimer CBCN (C2) and show that the ZPL shift reflects differences in the crystal environment for different polytypes. Furthermore, we demonstrate that different polytypic composition ratios of hBN and rBN can be achieved by MOVPE, which could pave the way for future applications in large-area van der Waals heterostructures.
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Submitted 29 May, 2024;
originally announced May 2024.
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Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature
Authors:
Jakub Iwański,
Jakub Kierdaszuk,
Arkadiusz Ciesielski,
Johannes Binder,
Aneta Drabińska,
Andrzej Wysmołek
Abstract:
A common solution for precise magnetic field sensing is to employ spin-active defects in semiconductors, with the NV center in diamond as prominent example. However, the three-dimensional nature of diamond limits the obtainable proximity of the defect to the sample. Two-dimensional boron nitride, which can host spin-active defects, can be used to overcome those limitations. In this work, we study…
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A common solution for precise magnetic field sensing is to employ spin-active defects in semiconductors, with the NV center in diamond as prominent example. However, the three-dimensional nature of diamond limits the obtainable proximity of the defect to the sample. Two-dimensional boron nitride, which can host spin-active defects, can be used to overcome those limitations. In this work, we study spin properties of sp2-bonded boron nitride layers grown using Metal Organic Chemical Vapor Deposition at temperatures ranging from 700 $^\circ$C to 1200 $^\circ$C. With Electron Spin Resonance (ESR) we show that our layers exhibit spin properties, which we ascribe to carbon related defects. Supported by photoluminescence and Fourier-transform infrared spectroscopy, we distinguish three different regimes: (i) growth at low temperatures with no ESR signal, (ii) growth at intermediate temperatures with a strong ESR signal and a large number of spin defects, (iii) growth at high temperatures with a weaker ESR signal and a lower number of spin defects. The observed effects can be further enhanced by an additional annealing step. Our studies demonstrate wafer-scale boron nitride that intrinsically hosts spin defects without any ion or neutron irradiation, which may be employed in spin memories or magnetic field detectors.
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Submitted 22 March, 2024;
originally announced March 2024.
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Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides
Authors:
M. Zinkiewicz,
M. Grzeszczyk,
T. Kazimierczuk,
M. Bartos,
K. Nogajewski,
W. Pacuski,
K. Watanabe,
T. Taniguchi,
A. Wysmołek,
P. Kossacki,
M. Potemski,
A. Babiński,
M. R. Molas
Abstract:
Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by swee** the excitation energy when the detection energy is fixed. We study the low-temperature ($T$=5~K) RSE spectra measured on four high quality monolayers (ML) of semiconducting transition metal dichalcogenides (S-TMDs), $i.e.$ MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, encapsulated in hexagonal BN.…
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Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by swee** the excitation energy when the detection energy is fixed. We study the low-temperature ($T$=5~K) RSE spectra measured on four high quality monolayers (ML) of semiconducting transition metal dichalcogenides (S-TMDs), $i.e.$ MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, encapsulated in hexagonal BN. The outgoing resonant conditions of Raman scattering reveal an extraordinary intensity enhancement of the phonon modes, which results in extremely rich RSE spectra. The obtained spectra are composed not only of Raman-active peaks, $i.e.$ in-plane E$'$ and out-of-plane A$'_1$, but the appearance of 1$^{st}$, 2$^{nd}$, and higher-order phonon modes is recognised. The intensity profiles of the A$'_1$ modes in the investigated MLs resemble the emissions due to neutral excitons measured in the corresponding PL spectra for the outgoing type of resonant Raman scattering conditions. Furthermore, for the WSe$_2$ ML, the A$'_1$ mode was observed when the incoming light was in resonance with the neutral exciton line. The strength of the exciton-phonon coupling (EPC) in S-TMD MLs strongly depends on the type of their ground excitonic state, $i.e.$ bright or dark, resulting in different shapes of the RSE spectra. Our results demonstrate that RSE spectroscopy is a powerful technique for studying EPC in S-TMD MLs.
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Submitted 16 August, 2023;
originally announced August 2023.
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Direction-sensitive graphene flow sensor
Authors:
P. Kaźmierczak,
J. Binder,
K. Boryczko,
T. Ciuk,
W. Strupiński,
R. Stępniewski,
A. Wysmołek
Abstract:
Graphene flow sensors hold great prospects for applications, but also encounter many difficulties, such as unwanted electrochemical phenomena, low measurable signal and limited dependence on the flow direction. This study proposes a novel approach allowing for the detection of a flow direction-dependent electric signal in aqueous solutions of salts, acids and bases. The key element in the proposed…
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Graphene flow sensors hold great prospects for applications, but also encounter many difficulties, such as unwanted electrochemical phenomena, low measurable signal and limited dependence on the flow direction. This study proposes a novel approach allowing for the detection of a flow direction-dependent electric signal in aqueous solutions of salts, acids and bases. The key element in the proposed solution is the use of a reference electrode which allows external gating of the graphene structure. Using external gating enables to enhance substantially the amplitude of the flow-generated signal. Simultaneous measurement of the reference electrode current allows us to recover a flow-direction-sensitive component of the flow-induced voltage in graphene. The obtained results are discussed in terms of the Coulomb interaction and other phenomena which can be present at the interface of graphene with the aqueous solution.
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Submitted 11 August, 2023; v1 submitted 2 August, 2023;
originally announced August 2023.
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Electrostatically-induced strain of graphene on GaN nanorods
Authors:
Jakub Kierdaszuk,
Rafał Bożek,
Tomasz Stefaniuk,
Ewelina Możdzyńska,
Karolina Piętak-Jurczak,
Sebastian Złotnik,
Vitaly Zubialevich,
Aleksandra Przewłoka,
Aleksandra Krajewska,
Wawrzyniec Kaszub,
Marta Gryglas-Borysiewicz,
Andrzej Wysmołek,
Johannes Binder,
Aneta Drabińska
Abstract:
Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod substrate affects the graphene electrode in two ways: 1) by a change of the carrier concentration in graphene and 2) by inducing strain, as demonstrated by the Raman…
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Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod substrate affects the graphene electrode in two ways: 1) by a change of the carrier concentration in graphene and 2) by inducing strain, as demonstrated by the Raman spectroscopy. The capacitance of the investigated structures scales with the area of graphene in contact with the nanorods. Due to the reduced contact surface, the efficiency of graphene gating is one order of magnitude lower than for a comparable structure without nanorods. The shift of graphene Raman modes observed under bias clearly shows the presence of electrostatically-induced strain and only a weak modification of carrier concentration, both independent of number of graphene layers. A higher impact of bias on strain was observed for samples with a larger contact area between the graphene and the nanorods which shows perspective for the construction of sensors and nanoresonator devices.
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Submitted 6 July, 2023;
originally announced July 2023.
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Bandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlN
Authors:
Jakub Iwański,
Mateusz Tokarczyk,
Aleksandra K. Dąbrowska,
Jan Pawłowski,
Piotr Tatarczak,
Johannes Binder,
Andrzej Wysmołek
Abstract:
The versatile range of applications for two-dimensional (2D) materials has encouraged scientists to further engineer the properties of these materials. This is often accomplished by stacking layered materials into more complex van der Waals heterostructures. A much less popular but technologically promising approach is the alloying of 2D materials with different element compositions. In this work,…
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The versatile range of applications for two-dimensional (2D) materials has encouraged scientists to further engineer the properties of these materials. This is often accomplished by stacking layered materials into more complex van der Waals heterostructures. A much less popular but technologically promising approach is the alloying of 2D materials with different element compositions. In this work, we demonstrate a first step in manipulating the hBN bandgap in terms of its width and indirect/direct character of the optical transitions. We present a set of aluminum alloyed hexagonal boron nitride (hBAlN) samples that were grown by metal organic vapor phase epitaxy (MOVPE) on 2-inch sapphire substrates with different aluminum concentration. Importantly, the obtained samples revealed a sp$^2$-bonded crystal structure. Optical absorption experiments disclosed two strong peaks in the excitonic spectral range with absorption coefficient $α\sim 10^6$ cm$^{-1}$. Their energies correspond very well with the energies of indirect and direct bandgap transitions in hBN. However, they are slightly redshifted. This observation is in agreement with predictions that alloying with Al leads to a decrease of the bandgap energy. The observation of two absorption peaks can be explained in terms of mixing electronic states in the K and M conduction band valleys, which leads to a significant enhancement of the absorption coefficient for indirect transitions.
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Submitted 25 May, 2023;
originally announced May 2023.
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Electron Paramagnetic Resonance of $V_{N}-V_{Ga}$ complex in $BGaN$
Authors:
Jakub Kierdaszuk,
Ewelina. B. Możdżyńska,
Aneta Drabińska,
Andrzej Wysmołek,
Jacek M. Baranowski
Abstract:
Metastable photoinduced Electron Paramagnetic Resonance (EPR) signal at low temperatures is reported in GaN alloyed with boron ($B_{x}Ga_{1-x}N$) epitaxial layers grown at temperatures ranging from 840 °C to 1090 °C. An isotropic EPR line with g = 2.004 is observed with intensity depending on the growth temperature for all samples with boron content between 0.73% and 2.51%. Temperature dependence…
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Metastable photoinduced Electron Paramagnetic Resonance (EPR) signal at low temperatures is reported in GaN alloyed with boron ($B_{x}Ga_{1-x}N$) epitaxial layers grown at temperatures ranging from 840 °C to 1090 °C. An isotropic EPR line with g = 2.004 is observed with intensity depending on the growth temperature for all samples with boron content between 0.73% and 2.51%. Temperature dependence of EPR intensities is compared with the results of High-Resolution Photoinduced Transient Spectroscopy (HRPITS). This allows to link particular traps with EPR signal. The activation energies of these traps are consistent with the theoretical position of the $V_{N}-V_{Ga}$ complex. Thermal annihilation of the EPR signal with 30 meV activation energy corresponds to shallow donor ionization. The model explaining light-induced EPR signal involving redistribution of electrons between deep and shallow donors mediated by photoionization to the conduction band is proposed.
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Submitted 6 April, 2023;
originally announced April 2023.
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Influence of Structural Defects on Charge Density Waves in 1T-TaS2
Authors:
I. Lutsyk,
K. Szalowski,
P. Krukowski,
P. Dabrowski,
M. Rogala,
W. Kozlowski,
M. Le Ster,
M. Piskorski,
D. A. Kowalczyk,
W. Rys,
R. Dunal,
A. Nadolska,
K. Toczek,
P. Przybysz,
E. Lacinska,
J. Binder,
A. Wysmolek,
N. Olszowska,
J. J. Kolodziej,
M. Gmitra,
T. Hattori,
Y. Kuwahara,
G. Bian,
T. -C. Chiang,
P. J. Kowalczyk
Abstract:
The influence of intrinsic defects of 1T-TaS2 on charge density waves (CDW) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron spectroscopy (ARPES), and density functional theory (DFT). We identify several types of structural defects and find that most have a local character limited to the single CDW site, with single exception which effectivel…
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The influence of intrinsic defects of 1T-TaS2 on charge density waves (CDW) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron spectroscopy (ARPES), and density functional theory (DFT). We identify several types of structural defects and find that most have a local character limited to the single CDW site, with single exception which effectively behaves as a dopant, leading to band bending and affecting multiple neighboring sites. While only one type of defect can be observed by STM topographic imaging, all defects are easily resolved by local density of states (LDOS) map** with STS. We correlate atomically-resolved STM periodicity of defect-free 1T-TaS2 to top sulfur atoms and introduce tiling of the surface using equiangular hexagon. DFT calculations (with included Coulomb interactions) are used to investigate the electronic structure by introducing sulfur vacancy or substituting sulfur with oxygen. The sulfur vacancy is characterized by metallic properties and is identified as an origin of one of observed experimentally defects. Whereas in the case of the latter, the oxidation of 1T-TaS2 is found to result in the loss of magnetic properties expected in defect-free material.
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Submitted 1 March, 2023;
originally announced March 2023.
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Epitaxial hexagonal boron nitride for hydrogen generation by radiolysis of interfacial water
Authors:
Johannes Binder,
Aleksandra Krystyna Dąbrowska,
Mateusz Tokarczyk,
Katarzyna Ludwiczak,
Rafał Bożek,
Grzegorz Kowalski,
Roman Stępniewski,
Andrzej Wysmołek
Abstract:
Hydrogen is an important building block in global strategies towards a future green energy system. To make this transition possible, intense scientific efforts are needed, also in the field of materials science. Two-dimensional crystals, such as hexagonal boron nitride (hBN), are very promising in this regard, as it was demonstrated that micrometer-sized exfoliated flakes are excellent barriers to…
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Hydrogen is an important building block in global strategies towards a future green energy system. To make this transition possible, intense scientific efforts are needed, also in the field of materials science. Two-dimensional crystals, such as hexagonal boron nitride (hBN), are very promising in this regard, as it was demonstrated that micrometer-sized exfoliated flakes are excellent barriers to molecular hydrogen. However, it remains an open question whether large-area layers fabricated by industrially relevant methods preserve such promising properties. In this work we show that electron beam-induced splitting of water creates hBN bubbles that effectively store molecular hydrogen for weeks and under extreme mechanical deformation. We demonstrate that epitaxial hBN allows direct visualization and monitoring of the process of hydrogen generation by radiolysis of interfacial water. Our findings show that hBN is not only a potential candidate for hydrogen storage, but also holds promise for the development of unconventional hydrogen production schemes.
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Submitted 23 October, 2022;
originally announced November 2022.
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All-BN Distributed Bragg Reflectors Fabricated in a Single MOCVD Process
Authors:
Arkadiusz Ciesielski,
Jakub Iwański,
Piotr Wróbel,
Rafał Bożek,
Sławomir Kret,
Jakub Turczyński,
Johannes Binder,
Krzysztof P. Korona,
Roman Stępniewski,
Andrzej Wysmołek
Abstract:
Distributed Bragg Reflectors (DBR) are well-established photonic structures that are used in many photonic applications. However, most of the DBRs are based on different materials or require post-process etching which can hinder integration with other components in the final photonic structure. Here, we demonstrate the fabrication of DBR structures consisting only of undoped boron nitride (BN) lay…
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Distributed Bragg Reflectors (DBR) are well-established photonic structures that are used in many photonic applications. However, most of the DBRs are based on different materials or require post-process etching which can hinder integration with other components in the final photonic structure. Here, we demonstrate the fabrication of DBR structures consisting only of undoped boron nitride (BN) layers with high refractive index contrast by using Metal-Organic Chemical Vapor Deposition (MOCVD). This has been achieved in a single process, without the need for any post-process etching. The difference in the refractive index of the component BN layers stems from different degrees of porosity of the individual BN layers, which is a direct result of a different growth temperature. The fabricated DBR structures consist of 15.5 pairs of BN layers and exhibit a reflectance of 87+/-1% at the maximum. The wavelength of maximum reflectance can be tuned from 500 nm up to the Infrared Region (IR), by simply adjusting the growth periods of subsequent BN layers. We also demonstrate that the fabricated structures can be used to create an optical microcavity. The fabricated DBRs are very promising candidates for future applications, for example in combination with single-photon emitters in h-BN, which could allow the building of a cavity-based all-BN single-photon source.
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Submitted 5 June, 2022;
originally announced June 2022.
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Temperature induced giant shift of phonon energy in epitaxial boron nitride layers
Authors:
Jakub Iwański,
Piotr Tatarczak,
Mateusz Tokarczyk,
Grzegorz Kowalski,
Aleksandra K. Dąbrowska,
Johannes Binder,
Roman Stępniewski,
Andrzej Wysmołek
Abstract:
The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and how their properties are influenced by defects. In this work, we investigate hBN layers grown by Metal Organic Vapor Phase Epitaxy (MOVPE) using Fourier-transfo…
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The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and how their properties are influenced by defects. In this work, we investigate hBN layers grown by Metal Organic Vapor Phase Epitaxy (MOVPE) using Fourier-transform Infrared (FTIR) spectroscopy in the temperature range of 160-540 K. Our measurements reveal strong differences in the character of layer-substrate interaction for as-grown and delaminated epitaxial layers. A much weaker interaction of as-grown layers is explained by wrinkles formation that reduces strain at the layer-substrate interface, which for layers transferred to other substrates occurs only in a limited temperature range. The most striking result is the observation of a giant increase in the $E_{1u}$ phonon energy of up to $\sim6$ cm$^{-1}$ in a narrow temperature range. We show that the amplitude and temperature range of the anomaly is strongly modified by UV light illumination. The observed giant effect is explained in terms of strain generation resulting from charge redistribution between shallow traps and different defects, which can be interpreted as a result of strong electron-phonon coupling in hBN. The observed narrow temperature range of the anomaly indicates that the effect may be further enhanced for example by electrostrictive effects, expected for sp$^2$ boron nitride.
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Submitted 28 April, 2022; v1 submitted 27 April, 2022;
originally announced April 2022.
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Heteroepitaxial growth of high optical quality, wafer-scale van der Waals heterostrucutres
Authors:
Katarzyna Ludwiczak,
Aleksandra Krystyna Dąbrowska,
Johannes Binder,
Mateusz Tokarczyk,
Jakub Iwański,
Bogusława Kurowska,
Jakub Turczyński,
Grzegorz Kowalski,
Rafał Bożek,
Roman Stępniewski,
Wojciech Pacuski,
Andrzej Wysmołek
Abstract:
Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to a monolayer. Well-resolved narrow excitonic resonances can be observed for such monolayers, however only for materials of sufficient crystalline quality, so far mostly available in the form of micrometer-sized flakes. A…
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Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to a monolayer. Well-resolved narrow excitonic resonances can be observed for such monolayers, however only for materials of sufficient crystalline quality, so far mostly available in the form of micrometer-sized flakes. A further significant improvement of optical and electrical properties can be achieved by transferring the TMD on hexagonal boron nitride (hBN). To exploit the full potential of TMDs in future applications, epitaxial techniques have to be developed that not only allow to growlarge-scale, high-quality TMD monolayers, but allow to perform the growth directly on large-scale epitaxial hBN. In this work we address this problem and demonstrate that MoSe2 of high optical quality can be directly grown on epitaxial hBN on an entire two-inch wafer. We developed a combined growth theme for which hBN is first synthesized at high temperature by Metal Organic Vapor Phase Epitaxy (MOVPE) and as a second step MoSe2 is deposited on top by Molecular Beam Epitaxy (MBE) at much lower temperatures. We show that this structure exhibits excellent optical properties, manifested by narrow excitonic lines in the photoluminescence spectra. Moreover, the material is homogeneous on the area of the whole two-inch wafer, with only +/-0.14 meV deviation of excitonic energy. Our mixed growth technique may guide the way for future large-scale production of high quality TMD/hBN heterostructures.
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Submitted 4 September, 2021;
originally announced September 2021.
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Pseudomagnetic fields and strain engineering: graphene on GaN nanowires
Authors:
Jakub Kierdaszuk,
Paweł Dąbrowski,
Maciej Rogala,
Paweł Krukowski,
Aleksandra Przewłoka,
Aleksandra Krajewska,
Wawrzyniec Kaszub,
Marta Sobanska,
Zbigniew R. Zytkiewicz,
Vitaly Z. Zubialevich,
Paweł J. Kowalczyk,
Andrzej Wysmołek,
Johannes Binder,
Aneta Drabińska
Abstract:
Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic force microscopy measurements performed in a HybriD mode complemented by scanning electron microscopy allow for a detailed visualization of the strain distribut…
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Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic force microscopy measurements performed in a HybriD mode complemented by scanning electron microscopy allow for a detailed visualization of the strain distribution on graphene surface. Graphene in direct contact with supporting regions is tensile strained, while graphene located in-between is characterized by lower strain. Characteristic tensile strained wrinkles also appear in the areas between the supporting regions. A detailed analysis of the strain distribution shows positive correlation between strain gradient and distances between borders of supporting regions. These results are confirmed by Raman spectroscopy by analysis the D' band intensity, which is affected by an enhancement of intravalley scattering. Furthermore, scanning tunneling spectroscopy shows a local modification of the density of states near the graphene wrinkle and weak localization measurements indicate the enhancement of pseudomagnetic field-induced scattering. Therefore, we show that nanowire and nanorod substrates provide strain engineering and induction of pseudomagnetic fields in graphene. The control of graphene morphology by a modification of distances between supporting regions is promising for both further fundamental research and the exploration of innovative ways to fabricate pseudomagnetic field-based devices like sensors or filters.
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Submitted 31 July, 2021;
originally announced August 2021.
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Highly effective gating of graphene on GaN
Authors:
Jakub Kierdaszuk,
Ewelina Rozbiegała,
Karolina Piętak,
Sebastian Złotnik,
Aleksandra Przewłoka,
Aleksandra Krajewska,
Wawrzyniec Kaszub,
Maria Kamińska,
Andrzej Wysmołek,
Johannes Binder,
Aneta Drabińska
Abstract:
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An observed Raman G band position shift larger than 8.5 cm-1 corresponds to an increase in carrier concentration of about 1.2x10^13 cm-2. The presence of a distinct…
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By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An observed Raman G band position shift larger than 8.5 cm-1 corresponds to an increase in carrier concentration of about 1.2x10^13 cm-2. The presence of a distinct G band splitting together with a narrow symmetric 2D band indicates turbostratic layer stacking and suggests the presence of a high potential gradient near the Schottky junction even at zero bias. The subbands characterized by the highest Raman energies correspond to the largest concentration of electrons. An analysis based on electroreflectance measurements and a modified Richardson equation confirmed that graphene on n-GaN separated by an undoped GaN spacer behaves like a capacitor at reverse bias. At least 60% of G subband position shifts occur at forward bias, which is related to a rapid reduction of electric field near the Schottky junction. Raman micromap** shows a high uniformity of gating efficiency on the surface. Therefore, our studies demonstrate the usefulness of few layer turbostratic graphene deposited on GaN for tracing electron-phonon coupling in graphene. Multilayer graphene also provides uniform and stable electric contacts. Moreover, the observed bias sensitive G band splitting can be used as an indicator of charge transfer in sensor applications in the low bias regime.
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Submitted 13 April, 2021; v1 submitted 4 February, 2021;
originally announced February 2021.
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Fundamental mechanisms of hBN growth by MOVPE
Authors:
Krzysztof Pakuła,
Aleksandra Dąbrowska,
Mateusz Tokarczyk,
Rafał Bożek,
Johannes Binder,
Grzegorz Kowalski,
Andrzej Wysmołek,
Roman Stępniewski
Abstract:
Hexagonal boron nitride is a promising material for many applications ranging from deep UV emission to an ideal substrate for other two dimensional crystals. Although efforts towards the growth of wafer-scale, high quality material strongly increased in recent years, the understanding of the actual growth mechanism still remains fragmentary and premature. Here, we unveil fundamental growth mechani…
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Hexagonal boron nitride is a promising material for many applications ranging from deep UV emission to an ideal substrate for other two dimensional crystals. Although efforts towards the growth of wafer-scale, high quality material strongly increased in recent years, the understanding of the actual growth mechanism still remains fragmentary and premature. Here, we unveil fundamental growth mechanisms by investigating the growth of hBN by metalorganic vapor phase epitaxy (MOVPE) in a wide range of growth conditions. The obtained results contradict the widespread opinion about the importance of parasitic gas-phase reactions decreasing the growth efficiency. Two different growth mechanisms that depend on ammonia flow and reactor pressure can be distinguished. Both mechanisms are effective in the case of polycrystalline growth, but the growth of highly ordered, flat layers, is strongly hindered. The problem is caused by a low efficiency of boron chemisorption on N-terminated edges of sp2-BN sheets forming the atomic steps on the surface of the layer. Two-dimensional growth can be activated and sustained by the flow modulation epitaxy (FME) method, an alternate switching of ammonia and TEB flows. The success of the FME method is explained in terms of periodic changes between N- and B-terminated reconstructions at the edges of sp2- BN sheets, which restore boron chemisorption. The presented results identify the fundamental growth mechanisms, which is the prerequisite for any further deterministic development of efficient, high-quality, large-scale hBN growth with MOVPE.
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Submitted 12 June, 2019;
originally announced June 2019.
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Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures
Authors:
J. Binder,
J. Howarth,
F. Withers,
M. R. Molas,
T. Taniguchi,
K. Watanabe,
C. Faugeras,
A. Wysmolek,
M. Danovich,
V. I. Fal'ko,
A. K. Geim,
K. S. Novoselov,
M. Potemski,
A. Kozikov
Abstract:
The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large pum** rates or in systems with long-lived electron-hole pairs. By electrically injecting carriers into WSe$_2$/MoS$_2$ type-II heterostructures which are indirect…
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The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large pum** rates or in systems with long-lived electron-hole pairs. By electrically injecting carriers into WSe$_2$/MoS$_2$ type-II heterostructures which are indirect in real and k-space, we establish a large population of typical optically silent interlayer excitons. Here, we reveal their emission spectra and show that the emission energy is tunable by an applied electric field. When the population is further increased by suppressing the radiative recombination rate with the introduction of an hBN spacer between WSe$_2$ and MoS$_2$, Auger-type and exciton-exciton annihilation processes become important. These processes are traced by the observation of an up-converted emission demonstrating that excitons gaining energy in non-radiative Auger processes can be recovered and recombine radiatively.
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Submitted 24 May, 2019;
originally announced May 2019.
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Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects
Authors:
Jakub Kierdaszuk,
Piotr Kaźmierczak,
Justyna Grzonka,
Aleksandra Krajewska,
Aleksandra Przewłoka,
Wawrzyniec Kaszub,
Zbigniew R. Zytkiewicz,
Marta Sobanska,
Maria Kamińska,
Andrzej Wysmołek,
Aneta Drabińska
Abstract:
We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nanowires being in contact with graphene impact graphene properties like roughness, strain and carrier concentration as well as density and type of induced defects. Detailed analysis of Raman spectra of graphene deposited on…
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We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nanowires being in contact with graphene impact graphene properties like roughness, strain and carrier concentration as well as density and type of induced defects. Detailed analysis of Raman spectra of graphene deposited on different nanowire substrates shows that bigger differences in nanowires height increase graphene strain, while higher number of nanowires in contact with graphene locally reduce the strain. Moreover, the value of graphene carrier concentration is found to be correlated with the density of nanowires in contact with graphene. Analysis of intensity ratios of Raman G, D and D' bands enable to trace how nanowire substrate impacts the defect concentration and type. The lowest concentration of defects is observed for graphene deposited on nanowires of the lowest density. Contact between graphene and densely arranged nanowires leads to a large density of vacancies. On the other hand, grain boundaries are the main type of defects in graphene on rarely distributed nanowires. Our results also show modification of graphene carrier concentration and strain by different types of defects present in graphene.
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Submitted 8 October, 2018;
originally announced October 2018.
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Raman scattering from the bulk inactive out-of-plane B$^{1}_{2\text{g}}$ mode in few-layer MoTe$_{2}$
Authors:
M. Grzeszczyk,
K. Gołasa,
M. R. Molas,
K. Nogajewski,
M. Zinkiewicz,
M. Potemski,
A. Wysmołek,
A. Babiński
Abstract:
Raman scattering from the out-of-plane vibrational modes (A$_{1\text{g}}$/A'$_{1}$), which originate from the bulk-inactive out-of-plane B$^{1}_{2\text{g}}$ mode, are studied in few-layer MoTe$_{2}$. Temperature-dependent measurements reveal a doublet structure of the corresponding peaks in the Raman scattering spectra of tetralayer and pentalayer samples. A strong enhancement of their lower energ…
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Raman scattering from the out-of-plane vibrational modes (A$_{1\text{g}}$/A'$_{1}$), which originate from the bulk-inactive out-of-plane B$^{1}_{2\text{g}}$ mode, are studied in few-layer MoTe$_{2}$. Temperature-dependent measurements reveal a doublet structure of the corresponding peaks in the Raman scattering spectra of tetralayer and pentalayer samples. A strong enhancement of their lower energy components is recorded at low temperature for 1.91 eV and 1.96 eV laser excitation. We discuss the attribution of the peaks to the inner modes of the respective Raman-active vibrations. The temperature evolution of their intensity strongly suggests a resonant character of the employed excitation, which leads to the mode enhancement at low temperature. The resonance of the laser light with the singularity of the electronic density of states at the $M$ point of the Brillouin zone in MoTe$_{2}$ is proposed to be responsible for the observed effects.
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Submitted 7 August, 2018;
originally announced August 2018.
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Surface-enhanced Raman scattering in graphene deposited on Al$_x$Ga$_{1-x}$N/GaN axial heterostructure nanowires
Authors:
Jakub Kierdaszuk,
Mateusz Tokarczyk,
Krzysztof M. Czajkowski,
Rafał Bożek,
Aleksandra Krajewska,
Aleksandra Przewłoka,
Wawrzyniec Kaszub,
Marta Sobanska,
Zbigniew R. Zytkiewicz,
Grzegorz Kowalski,
Tomasz J. Antosiewicz,
Maria Kamińska,
Andrzej Wysmołek,
Aneta Drabińska
Abstract:
The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not to be correlated with aluminium content. Analysis of graphene Raman bands parameters, KPFM and electroreflectance showed a screening of polarization charges. Theoretical calculations showed that plasmon resonance in gra…
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The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not to be correlated with aluminium content. Analysis of graphene Raman bands parameters, KPFM and electroreflectance showed a screening of polarization charges. Theoretical calculations showed that plasmon resonance in graphene is far beyond the Raman spectral range. This excludes the presence of an electromagnetic mechanism of SERS and therefore suggests the chemical mechanism of enhancement.
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Submitted 6 August, 2018;
originally announced August 2018.
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Laser-controlled field effect in graphene/hexagonal boron nitride heterostructures
Authors:
Igor Wlasny,
Roman Stepniewski,
Zbigniew Klusek,
Wlodzimierz Strupinski,
Andrzej Wysmolek
Abstract:
The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectroscopy and electrostatic force microscopy were performed. Laser light induced modifications are found to cause no structural changes. However, they have impact on Raman spectra and local charge state of the material. They ar…
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The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectroscopy and electrostatic force microscopy were performed. Laser light induced modifications are found to cause no structural changes. However, they have impact on Raman spectra and local charge state of the material. They are also shown to be stable in time and during electrical grounding of the sample. The mechanism of photoionization of deep defects present in h-BN is proposed to explain the observed phenomenon. The discussed effect opens up new method of nanostructurization of h-BN based planar heterostructures.
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Submitted 16 May, 2018; v1 submitted 1 March, 2018;
originally announced March 2018.
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Surface-enhanced Raman scattering of graphene caused by self-induced nanogating by GaN nanowire array
Authors:
Jakub Kierdaszuk,
Piotr Kaźmierczak,
Rafał Bożek,
Justyna Grzonka,
Aleksandra Krajewska,
Zbigniew R. Zytkiewicz,
Marta Sobanska,
Kamil Klosek,
Agnieszka Wołoś,
Maria Kamińska,
Andrzej Wysmołek,
Aneta Drabińska
Abstract:
A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy reveals a smooth graphene surface which is present when the GaN nanowires are uniform, whereas graphene on nanowires with substantial height differences is obse…
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A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy reveals a smooth graphene surface which is present when the GaN nanowires are uniform, whereas graphene on nanowires with substantial height differences is observed to be pierced and stretched by the uppermost nanowires. The energy shifts of the characteristic Raman bands confirms that these differences in the nanowire height has a significant impact on the local graphene strain and the carrier concentration. The images obtained by Kelvin probe force microscopy show clearly that the carrier concentration in graphene is modulated by the nanowire substrate and dependent on the nanowire density. Therefore, the observed surface enhanced Raman scattering for graphene deposited on GaN nanowires of comparable height is triggered by self-induced nano-gating to the graphene. However, no clear correlation of the enhancement with the strain or the carrier concentration of graphene was discovered.
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Submitted 7 November, 2017; v1 submitted 14 September, 2017;
originally announced September 2017.
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Resonant quenching of Raman scattering due to out-of-plane A$_{1g}$/A'$_1$ modes in few-layer MoTe$_2$
Authors:
K. Gołasa,
M. Grzeszczyk,
M. R. Molas,
M. Zinkiewicz,
Ł. Bala,
K. Nogajewski,
M. Potemski,
A. Wysmołek,
A. Babiński
Abstract:
Temperature-dependent (5 K to 300 K) Raman scattering study of A$_{1g}$/A'$_1$ phonon modes in mono-layer (1L), bilayer (2L), trilayer (3L), and tetralayer (4L) MoTe$_2$ is reported. The temperature evolution of the modes' intensity critically depends on the flake thickness. In particular with $λ$=632.8 nm light excitation, a strongly non-monotonic dependence of the A$_{1g}$ mode intensity is obse…
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Temperature-dependent (5 K to 300 K) Raman scattering study of A$_{1g}$/A'$_1$ phonon modes in mono-layer (1L), bilayer (2L), trilayer (3L), and tetralayer (4L) MoTe$_2$ is reported. The temperature evolution of the modes' intensity critically depends on the flake thickness. In particular with $λ$=632.8 nm light excitation, a strongly non-monotonic dependence of the A$_{1g}$ mode intensity is observed in 2L MoTe$_2$. The intensity decreases with decreasing temperature down to 220 K and the A$_{1g}$ mode almost completely vanishes from the Stokes scattering spectrum in the temperature range between 160 K and 220 K. The peak recovers at lower temperatures and at T=5 K it becomes three times more intense that at room temperature. Similar non-monotonic intensity evolution is observed for the out-of-plane mode in 3L MoTe$_2$ in which tellurium atoms in all three layers vibrate in-phase. The intensity of the other out-of-plane Raman-active mode, (with vibrations of tellurium atoms in the central layer shifted by 180$^o$ with respect to the vibrations in outer layers), only weakly depends on temperature. The observed quenching of the Raman scattering in 2L and 3L MoTe$_2$ is attributed to a destructive interference between the resonant and non-resonant contributions to the Raman scattering amplitude. The observed "antiresonance" is related to the electronic excitation at the M point of the Brillouin zone in few-layer MoTe$_2$.
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Submitted 24 November, 2016; v1 submitted 14 August, 2016;
originally announced August 2016.
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Raman scattering in few-layer MoTe$_{2}$
Authors:
M. Grzeszczyk,
K. Gołasa,
M. Zinkiewicz,
K. Nogajewski,
M. R. Molas,
M. Potemski,
A. Wysmołek,
A. Babiński
Abstract:
We report on room-temperature Raman scattering measurements in few-layer crystals of exfoliated molybdenum ditelluride (MoTe$_{2}$) performed with the use of 632.8 nm (1.96 eV) laser light excitation. In agreement with recent study reported by G. Froehlicher et al, (2015 $Nano$ $Lett.$ 15 6481) we observe a complex structure of the out-of-plane vibrational modes (A$_{1g}$/A$^{'}_{1}$), which can b…
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We report on room-temperature Raman scattering measurements in few-layer crystals of exfoliated molybdenum ditelluride (MoTe$_{2}$) performed with the use of 632.8 nm (1.96 eV) laser light excitation. In agreement with recent study reported by G. Froehlicher et al, (2015 $Nano$ $Lett.$ 15 6481) we observe a complex structure of the out-of-plane vibrational modes (A$_{1g}$/A$^{'}_{1}$), which can be explained in terms of interlayer interactions between single atomic planes of MoTe$_{2}$. In the case of low-energy shear and breathing modes of rigid interlayer vibrations it is shown that their energy evolution with the number of layers can be well reproduced within a linear chain model with only the nearest neighbor interaction taken into account. Based on this model the corresponding in-plane and out-of-plane force constants are determined. We also show that the Raman scattering in MoTe$_{2}$ measured using 514.5 nm (2.41 eV) laser light excitation results in much simpler spectra. We argue that the rich structure of the out-of-plane vibrational modes observed in Raman scattering spectra excited with the use of 632.8 nm laser light results from its resonance with the electronic transition at the M or K points of the MoTe$_{2}$ first Brillouin zone.
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Submitted 15 April, 2016; v1 submitted 23 November, 2015;
originally announced November 2015.
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Enhanced Raman scattering and weak localization in graphene deposited on GaN nanowires
Authors:
Jakub Kierdaszuk,
Piotr Kaźmierczak,
Aneta Drabińska,
Krzysztof Korona,
Agnieszka Wołoś,
Maria Kamińska,
Andrzej Wysmołek,
Iwona Pasternak,
Aleksandra Krajewska,
Krzysztof Pakuła,
Zbigniew R. Zytkiewicz
Abstract:
The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires induces spectral changes as well as large enhancement of Raman scattering intensity. Surprisingly, the smallest enhancement (about 30-fold) was observed for the de…
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The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires induces spectral changes as well as large enhancement of Raman scattering intensity. Surprisingly, the smallest enhancement (about 30-fold) was observed for the defect induced D' process and the highest intensity increase (over 50-fold) was found for the 2D transition. The observed energy shifts of the G and 2D bands allowed to determine carrier concentration fluctuations induced by GaN nanowires. Comparison of Raman scattering spatial intensity maps and the images obtained using scanning electron microscope led to conclusion that vertically aligned GaN nanowires induce a homogenous strain, substantial spatial modulation of carrier concentration in graphene and unexpected homogenous distribution of defects created by interaction with nanowires. The analysis of the D and D' peak intensity ratio showed that interaction with nanowires also changes the probability of scattering on different types of defects. The Raman studies were correlated with weak localization effect measured using microwave induced contactless electron transport. Temperature dependence of weak localization signal showed electron-electron scattering as a main decoherence mechanism with additional, temperature independent scattering reducing coherence length. We attributed it to the interaction of electrons in graphene with charges present on the top of nanowires due to spontaneous and piezoelectric polarization of GaN. Thus, nanowires act as antennas and generate enhanced near field which can explain the observed large enhancement of Raman scattering intensity.
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Submitted 24 September, 2015; v1 submitted 31 May, 2015;
originally announced June 2015.
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In-situ Raman Spectroscopy of the Graphene / Water Interface of a Solution-Gated Field Effect Transistor: Electron-Phonon Coupling and Spectroelectrochemistry
Authors:
J. Binder,
J. M. Urban,
R. Stepniewski,
W. Strupinski,
A. Wysmolek
Abstract:
We present a novel measurement approach which combines the electrical characterization of solution-gated field effect transistors based on epitaxial bilayer graphene on 4H-SiC (0001) with simultaneous Raman spectroscopy. By changing the gate voltage, we observed Raman signatures related to the resonant electron-phonon coupling. An analysis of these Raman bands enabled the extraction of the geometr…
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We present a novel measurement approach which combines the electrical characterization of solution-gated field effect transistors based on epitaxial bilayer graphene on 4H-SiC (0001) with simultaneous Raman spectroscopy. By changing the gate voltage, we observed Raman signatures related to the resonant electron-phonon coupling. An analysis of these Raman bands enabled the extraction of the geometrical capacitance of the system and an accurate calculation of the Fermi levels for bilayer graphene. An intentional application of higher gate voltages allowed us to trigger electrochemical reactions, which we followed in-situ by Raman spectroscopy. The reactions showed a partially reversible character, as indicated by an emergence / disappearance of peaks assigned to C-H and Si-H vibration modes as well as an increase / decrease of the defect-related Raman D band intensity. Our setup provides a highly interesting platform for future spectroelectrochemical research on electrically induced sorption processes of graphene on the micrometer scale.
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Submitted 14 August, 2015; v1 submitted 18 November, 2014;
originally announced November 2014.
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A micro-magneto-Raman scattering study of graphene on a bulk graphite substrate
Authors:
C. Faugeras,
J. Binder,
A. A. L. Nicolet,
P. Leszczynski,
P. Kossacki,
A. Wysmolek,
M. Orlita,
M. Potemski
Abstract:
We report on a magneto-Raman scattering study of graphene flakes located on the surface of a bulk graphite substrate. By spatially map** the Raman scattering response of the surface of bulk graphite with an applied magnetic field, we pinpoint specific locations which show the electronic excitation spectrum of graphene. We present the characteristic Raman scattering signatures of these specific l…
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We report on a magneto-Raman scattering study of graphene flakes located on the surface of a bulk graphite substrate. By spatially map** the Raman scattering response of the surface of bulk graphite with an applied magnetic field, we pinpoint specific locations which show the electronic excitation spectrum of graphene. We present the characteristic Raman scattering signatures of these specific locations. We show that such flakes can be superimposed with another flake and still exhibit a graphene-like excitation spectrum.
Two different excitation laser energies (514.5 and 720 nm) are used to investigate the excitation wavelength dependence of the electronic Raman scattering signal.
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Submitted 7 August, 2014;
originally announced August 2014.
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Carrier scattering from dynamical magneto-conductivity in quasi-neutral epitaxial graphene
Authors:
M. Orlita,
C. Faugeras,
R. Grill,
A. Wysmolek,
W. Strupinski,
C. Berger,
W. A. de Heer,
G. Martinez,
M. Potemski
Abstract:
The energy-dependence of the electronic scattering time is probed by Landau level spectroscopy in quasi neutral multilayer epitaxial graphene. From the Landau levels broadening we find that the scattering rate increases linearly with energy. This implies a surprising property of the Landau level spectrum in graphene - the number of the resolved Landau levels remains constant with the applied magne…
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The energy-dependence of the electronic scattering time is probed by Landau level spectroscopy in quasi neutral multilayer epitaxial graphene. From the Landau levels broadening we find that the scattering rate increases linearly with energy. This implies a surprising property of the Landau level spectrum in graphene - the number of the resolved Landau levels remains constant with the applied magnetic field. Insights are given about possible scattering mechanism and carrier mobilities in the graphene system investigated.
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Submitted 20 October, 2011; v1 submitted 4 January, 2011;
originally announced January 2011.
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Quasi-classical cyclotron resonance of Dirac fermions in highly doped graphene
Authors:
A. M. Witowski,
M. Orlita,
R. Stepniewski,
A. Wysmolek,
J. M. Baranowski,
W. Strupinski,
C. Faugeras,
G. Martinez,
M. Potemski
Abstract:
Cyclotron resonance in highly doped graphene has been explored using infrared magnetotransmission. Contrary to previous work, which only focused on the magneto-optical properties of graphene in the quantum regime, here we study the quasi-classical response of this system. We show that it has a character of classical cyclotron resonance, with an energy which is linear in the applied magnetic field…
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Cyclotron resonance in highly doped graphene has been explored using infrared magnetotransmission. Contrary to previous work, which only focused on the magneto-optical properties of graphene in the quantum regime, here we study the quasi-classical response of this system. We show that it has a character of classical cyclotron resonance, with an energy which is linear in the applied magnetic field and with an effective cyclotron mass defined by the position of the Fermi level m = E_F/v_F^2.
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Submitted 15 September, 2010; v1 submitted 23 July, 2010;
originally announced July 2010.
