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Fe substitution in URu$_2$Si$_2$: singlet magnetism in an extended Doniach phase diagram
Authors:
Andrea Marino,
Denise S. Christovam,
Chun-Fu Chang,
Johannes Falke,
Chang-Yang Kuo,
Chi-Nan Wu,
Martin Sundermann,
Andrea Amorese,
Hlynur Gretarsson,
Eric Lee Wong,
Camilla M. Moir,
Yuang Deng,
M. Brian Maple,
Peter Thalmeier,
Liu Hao Tjeng,
Andrea Severing
Abstract:
The application of pressure as well as the successive substitution of Ru with Fe in the hidden order (HO) compound URu$_2$Si$_2$ leads to the formation of the large moment antiferromagnetic phase (LMAFM). Here we have investigated the substitution series URu$_{2-x}$Fe$_x$Si$_2$ from $x$\,=\,0.0 to 2.0 by U\,4$f$ core-level photoelectron spectroscopy and have observed non-monotonic changes in the s…
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The application of pressure as well as the successive substitution of Ru with Fe in the hidden order (HO) compound URu$_2$Si$_2$ leads to the formation of the large moment antiferromagnetic phase (LMAFM). Here we have investigated the substitution series URu$_{2-x}$Fe$_x$Si$_2$ from $x$\,=\,0.0 to 2.0 by U\,4$f$ core-level photoelectron spectroscopy and have observed non-monotonic changes in the spectra. The initial increase and subsequent decrease of the spectral weight of the 4$f$ core level satellite with increasing $x$ stands for a non-monotonic 5$f$ filling across the substitution series. The competition of chemical pressure and increase of the density of states at the Fermi energy, both due to substitution of Ru with Fe, can explain such a behavior. An extended Doniach phase diagram including the $x$ dependence of the density of states is proposed. Also in URu$_{2-x}$Fe$_x$Si$_2$ the ground state is a singlet or quasi-doublet state consisting of two singlets. Hence, the formation of magnetic order in the URu$_{2-x}$Fe$_x$Si$_2$ substitution series must be explained within a singlet magnetism model.
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Submitted 23 August, 2023;
originally announced August 2023.
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WS$_2$ Band Gap Renormalization Induced by Tomonaga Luttinger Liquid Formation in Mirror Twin Boundaries
Authors:
Antonio Rossi,
John C. Thomas,
Johannes T. Küchle,
Elyse Barré,
Zhuohang Yu,
Da Zhou,
Shalini Kumari,
Hsin-Zon Tsai,
Ed Wong,
Chris Jozwiak,
Aaron Bostwick,
Joshua A. Robinson,
Mauricio Terrones,
Archana Raja,
Adam Schwartzberg,
D. Frank Ogletree,
Jeffrey B. Neaton,
Michael F. Crommie,
Francesco Allegretti,
Willi Auwärter,
Eli Rotenberg,
Alexander Weber-Bargioni
Abstract:
Tomonaga-Luttinger liquid (TLL) behavior in one-dimensional systems has been predicted and shown to occur at semiconductor-to-metal transitions within two-dimensional materials. Reports of mirror twin boundaries (MTBs) hosting a Fermi liquid or a TLL have suggested a dependence on the underlying substrate, however, unveiling the physical details of electronic contributions from the substrate requi…
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Tomonaga-Luttinger liquid (TLL) behavior in one-dimensional systems has been predicted and shown to occur at semiconductor-to-metal transitions within two-dimensional materials. Reports of mirror twin boundaries (MTBs) hosting a Fermi liquid or a TLL have suggested a dependence on the underlying substrate, however, unveiling the physical details of electronic contributions from the substrate require cross-correlative investigation. Here, we study TLL formation in MTBs within defectively engineered WS$_2$ atop graphene, where band structure and the atomic environment is visualized with nano angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and scanning tunneling spectroscopy, and non-contact atomic force microscopy. Correlations between the local density of states and electronic band dispersion elucidated the electron transfer from graphene into a TLL hosted by MTB defects. We find that MTB defects can be substantially charged at a local level, which drives a band gap shift by $\sim$0.5 eV.
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Submitted 18 January, 2023; v1 submitted 6 January, 2023;
originally announced January 2023.
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Autonomous Investigations over WS$_2$ and Au{111} with Scanning Probe Microscopy
Authors:
John C. Thomas,
Antonio Rossi,
Darian Smalley,
Luca Francaviglia,
Zhuohang Yu,
Tianyi Zhang,
Shalini Kumari,
Joshua A. Robinson,
Mauricio Terrones,
Masahiro Ishigami,
Eli Rotenberg,
Edward S. Barnard,
Archana Raja,
Ed Wong,
D. Frank Ogletree,
Marcus M. Noack,
Alexander Weber-Bargioni
Abstract:
Individual atomic defects in 2D materials impact their macroscopic functionality. Correlating the interplay is challenging, however, intelligent hyperspectral scanning tunneling spectroscopy (STS) map** provides a feasible solution to this technically difficult and time consuming problem. Here, dense spectroscopic volume is collected autonomously via Gaussian process regression, where convolutio…
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Individual atomic defects in 2D materials impact their macroscopic functionality. Correlating the interplay is challenging, however, intelligent hyperspectral scanning tunneling spectroscopy (STS) map** provides a feasible solution to this technically difficult and time consuming problem. Here, dense spectroscopic volume is collected autonomously via Gaussian process regression, where convolutional neural networks are used in tandem for spectral identification. Acquired data enable defect segmentation, and a workflow is provided for machine-driven decision making during experimentation with capability for user customization. We provide a means towards autonomous experimentation for the benefit of both enhanced reproducibility and user-accessibility. Hyperspectral investigations on WS$_2$ sulfur vacancy sites are explored, which is combined with local density of states confirmation on the Au{111} herringbone reconstruction. Chalcogen vacancies, pristine WS$_2$, Au face-centered cubic, and Au hexagonal close packed regions are examined and detected by machine learning methods to demonstrate the potential of artificial intelligence for hyperspectral STS map**.
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Submitted 2 May, 2022; v1 submitted 7 October, 2021;
originally announced October 2021.
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Localization and reduction of superconducting quantum coherent circuit losses
Authors:
M. Virginia P. Altoé,
Archan Banerjee,
Cassidy Berk,
Ahmed Hajr,
Adam Schwartzberg,
Chengyu Song,
Mohammed Al Ghadeer,
Shaul Aloni,
Michael J. Elowson,
John Mark Kreikebaum,
Ed K. Wong,
Sinead Griffin,
Saleem Rao,
Alexander Weber-Bargioni,
Andrew M. Minor,
David I. Santiago,
Stefano Cabrini,
Irfan Siddiqi,
D. Frank Ogletree
Abstract:
Quantum sensing and computation can be realized with superconducting microwave circuits. Qubits are engineered quantum systems of capacitors and inductors with non-linear Josephson junctions. They operate in the single-excitation quantum regime, photons of $27 μ$eV at 6.5 GHz. Quantum coherence is fundamentally limited by materials defects, in particular atomic-scale parasitic two-level systems (T…
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Quantum sensing and computation can be realized with superconducting microwave circuits. Qubits are engineered quantum systems of capacitors and inductors with non-linear Josephson junctions. They operate in the single-excitation quantum regime, photons of $27 μ$eV at 6.5 GHz. Quantum coherence is fundamentally limited by materials defects, in particular atomic-scale parasitic two-level systems (TLS) in amorphous dielectrics at circuit interfaces.[1] The electric fields driving oscillating charges in quantum circuits resonantly couple to TLS, producing phase noise and dissipation. We use coplanar niobium-on-silicon superconducting resonators to probe decoherence in quantum circuits. By selectively modifying interface dielectrics, we show that most TLS losses come from the silicon surface oxide, and most non-TLS losses are distributed throughout the niobium surface oxide. Through post-fabrication interface modification we reduced TLS losses by 85% and non-TLS losses by 72%, obtaining record single-photon resonator quality factors above 5 million and approaching a regime where non-TLS losses are dominant.
[1]Müller, C., Cole, J. H. & Lisenfeld, J. Towards understanding two-level-systems in amorphous solids: insights from quantum circuits. Rep. Prog. Phys. 82, 124501 (2019)
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Submitted 14 December, 2020;
originally announced December 2020.
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Experimental measurement of the intrinsic excitonic wavefunction
Authors:
Michael K. L. Man,
Julien Madéo,
Chakradhar Sahoo,
Kaichen Xie,
Marshall Campbell,
Vivek Pareek,
Arka Karmakar,
E Laine Wong,
Abdullah Al-Mahboob,
Nicholas S. Chan,
David R. Bacon,
Xing Zhu,
Mohamed Abdelrasoul,
Xiaoquin Li,
Tony F. Heinz,
Felipe H. da Jornada,
Ting Cao,
Keshav M. Dani
Abstract:
An exciton, a two-body composite quasiparticle formed of an electron and hole, is a fundamental optical excitation in condensed-matter systems. Since its discovery nearly a century ago, a measurement of the excitonic wavefunction has remained beyond experimental reach. Here, we directly image the excitonic wavefunction in reciprocal space by measuring the momentum distribution of electrons photoem…
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An exciton, a two-body composite quasiparticle formed of an electron and hole, is a fundamental optical excitation in condensed-matter systems. Since its discovery nearly a century ago, a measurement of the excitonic wavefunction has remained beyond experimental reach. Here, we directly image the excitonic wavefunction in reciprocal space by measuring the momentum distribution of electrons photoemitted from excitons in monolayer WSe2. By transforming to real space, we obtain a visual of the distribution of the electron around the hole in an exciton. Further, by also resolving the energy coordinate, we confirm the elusive theoretical prediction that the photoemitted electron exhibits an inverted energy-momentum dispersion relationship reflecting the valence band where the partner hole remains, rather than that of conduction-band states of the electron.
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Submitted 25 November, 2020;
originally announced November 2020.
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Strain-Induced Room-Temperature Ferroelectricity in SrTiO$_3$ Membranes
Authors:
Ruijuan Xu,
Jiawei Huang,
Edward S. Barnard,
Seung Sae Hong,
Prastuti Singh,
Ed K. Wong,
Thies Jansen,
Varun Harbola,
Jun Xiao,
Bai Yang Wang,
Sam Crossley,
Di Lu,
Shi Liu,
Harold Y. Hwang
Abstract:
Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film heterostructures. This approach, however, lacks the ability to produce large and continuously variable strain states, thus limiting the potential for designing and tuning the desired properties of ferroelectric films. Here, we…
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Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film heterostructures. This approach, however, lacks the ability to produce large and continuously variable strain states, thus limiting the potential for designing and tuning the desired properties of ferroelectric films. Here, we observe and explore dynamic strain-induced ferroelectricity in SrTiO$_3$ by laminating freestanding oxide films onto a stretchable polymer substrate. Using a combination of scanning probe microscopy, optical second harmonic generation measurements, and atomistic modeling, we demonstrate robust room-temperature ferroelectricity in SrTiO$_3$ with 2.0% uniaxial tensile strain, corroborated by the notable features of 180° ferroelectric domains and an extrapolated transition temperature of 400 K. Our work reveals the enormous potential of employing oxide membranes to create and enhance ferroelectricity in environmentally benign lead-free oxides, which hold great promise for applications ranging from non-volatile memories and microwave electronics.
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Submitted 18 May, 2020;
originally announced May 2020.
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Directly visualizing the momentum forbidden dark excitons and their dynamics in atomically thin semiconductors
Authors:
Julien Madéo,
Michael K. L. Man,
Chakradhar Sahoo,
Marshall Campbell,
Vivek Pareek,
E Laine Wong,
Abdullah Al Mahboob,
Nicholas S. Chan,
Arka Karmakar,
Bala Murali Krishna Mariserla,
Xiaoqin Li,
Tony F. Heinz,
Ting Cao,
Keshav M. Dani
Abstract:
Resolving the momentum degree of freedom of excitons - electron-hole pairs bound by the Coulomb attraction in a photoexcited semiconductor, has remained a largely elusive goal for decades. In atomically thin semiconductors, such a capability could probe the momentum forbidden dark excitons, which critically impact proposed opto-electronic technologies, but are not directly accessible via optical t…
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Resolving the momentum degree of freedom of excitons - electron-hole pairs bound by the Coulomb attraction in a photoexcited semiconductor, has remained a largely elusive goal for decades. In atomically thin semiconductors, such a capability could probe the momentum forbidden dark excitons, which critically impact proposed opto-electronic technologies, but are not directly accessible via optical techniques. Here, we probe the momentum-state of excitons in a WSe2 monolayer by photoemitting their constituent electrons, and resolving them in time, momentum and energy. We obtain a direct visual of the momentum forbidden dark excitons, and study their properties, including their near-degeneracy with bright excitons and their formation pathways in the energy-momentum landscape. These dark excitons dominate the excited state distribution - a surprising finding that highlights their importance in atomically thin semiconductors.
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Submitted 1 May, 2020;
originally announced May 2020.
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Examining the surface phase diagram of IrTe$_2$ with photoemission
Authors:
M. Rumo,
C. W. Nicholson,
A. Pulkkinen,
B. Hildebrand,
G. Kremer,
B. Salzmann,
M. -L. Mottas,
K. Y. Ma,
E L. Wong,
M. K. L. Man,
K. M. Dani,
B. Barbiellini,
M. Muntwiller,
T. Jaouen,
F. O. von Rohr,
C. Monney
Abstract:
In the transition metal dichalcogenide IrTe$_2$, low-temperature charge-ordered phase transitions involving Ir dimers lead to the occurrence of stripe phases of different periodicities, and nearly degenerate energies. Bulk-sensitive measurements have shown that, upon cooling, IrTe$_2$ undergoes two such first-order transitions to $(5\times1\times5)$ and $(8\times1\times8)$ reconstructed phases at…
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In the transition metal dichalcogenide IrTe$_2$, low-temperature charge-ordered phase transitions involving Ir dimers lead to the occurrence of stripe phases of different periodicities, and nearly degenerate energies. Bulk-sensitive measurements have shown that, upon cooling, IrTe$_2$ undergoes two such first-order transitions to $(5\times1\times5)$ and $(8\times1\times8)$ reconstructed phases at $T_{c_1}\sim 280$~K and $T_{c_2}\sim 180$~K, respectively. Here, using surface sensitive probes of the electronic structure of IrTe$_2$, we reveal the first-order phase transition at $T_{c_3}=165$~K to the $(6\times1)$ stripes phase, previously proposed to be the surface ground state. This is achieved by combining x-ray photoemission spectroscopy and angle-resolved photoemission spectroscopy, which give access to the evolution of stripe domains and a particular surface state, the energy of which is dependent on the Ir dimer length. By performing measurements over a full thermal cycle, we also report the complete hysteresis of all these phases.
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Submitted 9 June, 2020; v1 submitted 10 December, 2019;
originally announced December 2019.
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Electrically driven photon emission from individual atomic defects in monolayer WS2
Authors:
Bruno Schuler,
Katherine A. Cochrane,
Christoph Kastl,
Ed Barnard,
Ed Wong,
Nicholas Borys,
Adam M. Schwartzberg,
D. Frank Ogletree,
F. Javier García de Abajo,
Alexander Weber-Bargioni
Abstract:
Optical quantum emitters are a key component of quantum devices for metrology and information processing. In particular, atomic defects in 2D materials can operate as optical quantum emitters that overcome current limitations of conventional bulk emitters, such as yielding a high single-photon generation rate and offering surface accessibility for excitation and photon extraction. Here we demonstr…
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Optical quantum emitters are a key component of quantum devices for metrology and information processing. In particular, atomic defects in 2D materials can operate as optical quantum emitters that overcome current limitations of conventional bulk emitters, such as yielding a high single-photon generation rate and offering surface accessibility for excitation and photon extraction. Here we demonstrate electrically stimulated photon emission from individual point defects in a 2D material. Specifically, by bringing a metallic tip into close proximity to a discrete defect state in the band gap of WS2, we induce inelastic tip-to-defect electron tunneling with an excess of transition energy carried by the emitted photons. We gain atomic spatial control over the emission through the position of the tip, while the spectral characteristics are highly customizable by varying the applied tip-sample voltage. Atomically resolved emission maps of individual sulfur vacancies and chromium substituent defects are in excellent agreement with the electron density of their respective defect orbitals as imaged via conventional elastic scanning tunneling microscopy. Inelastic charge-carrier injection into localized defect states of 2D materials thus provides a powerful platform for electrically driven, broadly tunable, atomic-scale single-photon sources.
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Submitted 10 October, 2019;
originally announced October 2019.
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Blue-Light-Emitting Color Centers in High-Quality Hexagonal Boron Nitride
Authors:
Brian Shevitski,
S. Matt Gilbert,
Christopher T. Chen,
Christoph Kastl,
Edward S. Barnard,
Ed Wong,
D. Frank Ogletree,
Kenji Watanabe,
Takashi Taniguchi,
Alex Zettl,
Shaul Aloni
Abstract:
Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a sharp emission line at 435 nm. The emitters are activated and deactivated by electron beam irradiation and have spectral and temporal characteristics consistent…
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Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a sharp emission line at 435 nm. The emitters are activated and deactivated by electron beam irradiation and have spectral and temporal characteristics consistent with atomic color centers weakly coupled to lattice vibrations. The emitters are conspicuously absent from commercially available h-BN and are only present in ultra-high-quality h-BN grown using a high-pressure, high-temperature Ba-B-N flux/solvent, suggesting that these emitters originate from impurities or related defects specific to this unique synthetic route. Our results imply that the light emission is activated and deactivated by electron beam manipulation of the charge state of an impurity-defect complex.
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Submitted 5 September, 2019; v1 submitted 27 April, 2019;
originally announced April 2019.
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Cathodoluminescence-based nanoscopic thermometry in a lanthanide-doped phosphor
Authors:
Clarice D. Aiello,
Andrea D. Pickel,
Edward Barnard,
Rebecca B. Wai,
Christian Monachon,
Edward Wong,
Shaul Aloni,
D. Frank Ogletree,
Chris Dames,
Naomi Ginsberg
Abstract:
Crucial to analyze phenomena as varied as plasmonic hot spots and the spread of cancer in living tissue, nanoscale thermometry is challenging: probes are usually larger than the sample under study, and contact techniques may alter the sample temperature itself. Many photostable nanomaterials whose luminescence is temperature-dependent, such as lanthanide-doped phosphors, have been shown to be good…
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Crucial to analyze phenomena as varied as plasmonic hot spots and the spread of cancer in living tissue, nanoscale thermometry is challenging: probes are usually larger than the sample under study, and contact techniques may alter the sample temperature itself. Many photostable nanomaterials whose luminescence is temperature-dependent, such as lanthanide-doped phosphors, have been shown to be good non-contact thermometric sensors when optically excited. Using such nanomaterials, in this work we accomplished the key milestone of enabling far-field thermometry with a spatial resolution that is not diffraction-limited at readout.
We explore thermal effects on the cathodoluminescence of lanthanide-doped NaYF$_4$ nanoparticles. Whereas cathodoluminescence from such lanthanide-doped nanomaterials has been previously observed, here we use quantitative features of such emission for the first time towards an application beyond localization. We demonstrate a thermometry scheme that is based on cathodoluminescence lifetime changes as a function of temperature that achieves $\sim$ 30 mK sensitivity in sub-$μ$m nanoparticle patches. The scheme is robust against spurious effects related to electron beam radiation damage and optical alignment fluctuations.
We foresee the potential of single nanoparticles, of sheets of nanoparticles, and also of thin films of lanthanide-doped NaYF$_4$ to yield temperature information via cathodoluminescence changes when in the vicinity of a sample of interest; the phosphor may even protect the sample from direct contact to damaging electron beam radiation. Cathodoluminescence-based thermometry is thus a valuable novel tool towards temperature monitoring at the nanoscale, with broad applications including heat dissipation in miniaturized electronics and biological diagnostics.
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Submitted 11 October, 2018;
originally announced October 2018.
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Terahertz frequency magnetoelectric effect in Ni doped CaBaCo$_4$O$_7$
Authors:
Shukai Yu,
C. Dhanasekhar,
Venimadhav Adyam,
Skylar Deckoff-Jones,
Michael K. L. Man,
Julien Madeo,
E. Laine Wong,
Takaaki Harada,
Bala M. K. Mariserla,
Keshav M. Dani,
Diyar Talbayev
Abstract:
We present a study of terahertz frequency magnetoelectric effect in ferrimagnetic pyroelectric CaBaCo$_4$O$_7$ and its Ni-doped variants. The terahertz absorption spectrum of these materials consists of spin excitations and low-frequency infrared-active phonons. We studied the magnetic-field-induced changes in the terahertz refractive index and absorption in magnetic fields up to 17 T. We find tha…
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We present a study of terahertz frequency magnetoelectric effect in ferrimagnetic pyroelectric CaBaCo$_4$O$_7$ and its Ni-doped variants. The terahertz absorption spectrum of these materials consists of spin excitations and low-frequency infrared-active phonons. We studied the magnetic-field-induced changes in the terahertz refractive index and absorption in magnetic fields up to 17 T. We find that the magnetic field modulates the strength of infrared-active optical phonons near 1.2 and 1.6 THz. We use the Lorentz model of the dielectric function to analyze the measured magnetic-field dependence of the refractive index and absorption. We propose that most of the magnetoelectric effect is contributed by the optical phonons near 1.6 THz and higher-frequency resonances. Our experimental results can be used to construct and validate more detailed theoretical descriptions of magnetoelectricity in CaBaCo$_{4-x}$Ni$_x$O$_7$.
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Submitted 14 August, 2017;
originally announced August 2017.
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Observation of charge density wave order in 1D mirror twin boundaries of single-layer MoSe2
Authors:
Sara Barja,
Sebastian Wickenburg,
Zhen-Fei Liu,
Yi Zhang,
Hye** Ryu,
Miguel M. Ugeda,
Zahid Hussain,
Z. -X. Shen,
Sung-Kwan Mo,
Ed Wong,
Miquel B. Salmeron,
Feng Wang,
Michael F. Crommie,
D. Frank Ogletree,
Jeffrey B. Neaton,
Alexander Weber-Bargioni
Abstract:
Properties of two-dimensional transition metal dichalcogenides are highly sensitive to the presence of defects in the crystal structure. A detailed understanding of defect structure may lead to control of material properties through defect engineering. Here we provide direct evidence for the existence of isolated, one-dimensional charge density waves at mirror twin boundaries in single-layer MoSe2…
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Properties of two-dimensional transition metal dichalcogenides are highly sensitive to the presence of defects in the crystal structure. A detailed understanding of defect structure may lead to control of material properties through defect engineering. Here we provide direct evidence for the existence of isolated, one-dimensional charge density waves at mirror twin boundaries in single-layer MoSe2. Our low-temperature scanning tunneling microscopy/spectroscopy measurements reveal a substantial bandgap of 60 - 140 meV opening at the Fermi level in the otherwise one dimensional metallic structure. We find an energy-dependent periodic modulation in the density of states along the mirror twin boundary, with a wavelength of approximately three lattice constants. The modulations in the density of states above and below the Fermi level are spatially out of phase, consistent with charge density wave order. In addition to the electronic characterization, we determine the atomic structure and bonding configuration of the one-dimensional mirror twin boundary by means of high-resolution non-contact atomic force microscopy. Density functional theory calculations reproduce both the gap opening and the modulations of the density of states.
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Submitted 17 March, 2016;
originally announced March 2016.
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Development of 2D Bi-SQUID Arrays with High Linearity
Authors:
S. Berggren,
G. Prokopenko,
P. Longhini,
A. Palacios,
O. A. Mukhanov,
A. Leese de Escobar,
B. J. Taylor,
M. C. de Andrade,
M. Nisenoff,
R. L. Fagaly,
T. Wong,
E. Cho,
E. Wong,
V. In
Abstract:
We develop a two-dimensional (2D) Superconducting Quantum Interference Filter (SQIF) array based on recently introduced high-linearity tri-junction bi-SQUIDs. Our bi-SQUID SQIF array design is based on a tight integration of individual bi- SQUID cells sharing inductances with adjacent cells. We provide extensive computer simulations, analysis and experimental measurements, in which we explore the…
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We develop a two-dimensional (2D) Superconducting Quantum Interference Filter (SQIF) array based on recently introduced high-linearity tri-junction bi-SQUIDs. Our bi-SQUID SQIF array design is based on a tight integration of individual bi- SQUID cells sharing inductances with adjacent cells. We provide extensive computer simulations, analysis and experimental measurements, in which we explore the phase dynamics and linearity of the array voltage response. The non-uniformity in inductances of the bi-SQUIDs produces a pronounced zero-field single antipeak in the voltage response. The anti-peak linearity and size can be optimized by varying the critical current of the additional junction of each bi-SQUID. The layout implementation of the tight 2D array integration leads to a distinct geometrical diamond shape formed by the merged dual bi-SQUID cells. Different size 2D arrays are fabricated using standard HYPRES niobium 4.5 kA/cm2 fabrication process. The measured linearity, power gain, and noise properties will be analyzed for different array sizes and the results will be compared with circuit simulations. We will discuss a design approach for the electrically small magnetic field antenna and low-noise amplifiers with high bandwidth based on these 2D bi-SQUID SQIF arrays. The results from this work will be used to design chips densely and completely covered in bi-SQUIDs that has optimized parameters such as linearity and power gain.
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Submitted 8 January, 2013;
originally announced January 2013.
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Tunneling in Quantum Wires: a Boundary Conformal Field Theory Approach
Authors:
Eugene Wong,
Ian Affleck
Abstract:
Tunneling through a localized barrier in a one-dimensional interacting electron gas has been studied recently using Luttinger liquid techniques. Stable phases with zero or unit transmission occur, as well as critical points with universal fractional transmission whose properties have only been calculated approximately, using a type of ``$ε$-expansion''. It may be possible to calculate the univer…
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Tunneling through a localized barrier in a one-dimensional interacting electron gas has been studied recently using Luttinger liquid techniques. Stable phases with zero or unit transmission occur, as well as critical points with universal fractional transmission whose properties have only been calculated approximately, using a type of ``$ε$-expansion''. It may be possible to calculate the universal properties of these critical points exactly using the recent boundary conformal field theory technique, although difficulties arise from the $\infty$ number of conformal towers in this $c=4$ theory and the absence of any apparent ``fusion'' principle. Here, we formulate the problem efficiently in this new language, and recover the critical properties of the stable phases.
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Submitted 16 November, 1993;
originally announced November 1993.
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Non-Fermi Liquid Behavior In Quantum Critical Systems
Authors:
Junwu Gan,
Eugene Wong
Abstract:
The problem of an electron gas interacting via exchanging transverse gauge bosons is studied using the renormalization group method. The long wavelength behavior of the gauge field is shown to be in the Gaussian universality class with a dynamical exponent $z=3$ in dimensions $D \geq 2$.
This implies that the gauge coupling constant is exactly marginal. Scattering of the electrons by the gauge…
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The problem of an electron gas interacting via exchanging transverse gauge bosons is studied using the renormalization group method. The long wavelength behavior of the gauge field is shown to be in the Gaussian universality class with a dynamical exponent $z=3$ in dimensions $D \geq 2$.
This implies that the gauge coupling constant is exactly marginal. Scattering of the electrons by the gauge mode leads to non-Fermi liquid behavior in $D \leq 3$. The asymptotic electron and gauge Green's functions, interaction vertex, specific heat and resistivity are presented.
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Submitted 27 September, 1993;
originally announced September 1993.
