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Development of a Scalable Quantum Memory Platform -- Materials Science of Erbium-Doped TiO$_2$ Thin Films on Silicon
Authors:
Manish Kumar Singh,
Gary Wolfowicz,
Jianguo Wen,
Sean E. Sullivan,
Abhinav Prakash,
Alan M. Dibos,
David D. Awschalom,
F. Joseph Heremans,
Supratik Guha
Abstract:
Rare-earth ions (REI) have emerged as an attractive candidate for solid-state qubits, particularly as a quantum memory. Their 4f-4f transitions are shielded by filled 5s and 5p orbitals, offering a degree of protection from external electric fields. Embedded within a thin film oxide host, REIs could enable a qubit platform with significant memory capabilities. Furthermore, a silicon-compatible thi…
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Rare-earth ions (REI) have emerged as an attractive candidate for solid-state qubits, particularly as a quantum memory. Their 4f-4f transitions are shielded by filled 5s and 5p orbitals, offering a degree of protection from external electric fields. Embedded within a thin film oxide host, REIs could enable a qubit platform with significant memory capabilities. Furthermore, a silicon-compatible thin film form factor would enable the use of standard semiconductor fabrication processes to achieve chip-based integrability and scalability for functional quantum networks. Towards this goal, we have carried out optical and microstructural studies of erbium-doped polycrystalline and epitaxial TiO$_2$ thin films on Si (100), r-sapphire, and SrTiO$_3$ (100). We observe that the inhomogeneous optical linewidth of the Er photoluminescence is comparable or better for polycrystalline Er:TiO$_2$(grown on Si) in comparison to single crystal epitaxial films on sapphire or SrTiO$_3$, implying a relative insensitivity to extended defects. We investigated the effect of the film/substrate and film/air interface and found that the inhomogeneous linewidth and spectral diffusion can be significantly improved via bottom buffer and top cap** layers of undoped TiO$_2$. Using such approaches, we obtain inhomogeneous linewidths of 5.2 GHz and spectral diffusion of 180 MHz in Er:TiO$_2$ /Si(100) films and have demonstrated the engineerability of quantum-relevant properties in these thin films.
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Submitted 27 February, 2022; v1 submitted 10 February, 2022;
originally announced February 2022.
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Photoluminescence spectra of point defects in semiconductors: validation of first principles calculations
Authors:
Yu **,
Marco Govoni,
Gary Wolfowicz,
Sean E. Sullivan,
F. Joseph Heremans,
David D. Awschalom,
Giulia Galli
Abstract:
Optically and magnetically active point defects in semiconductors are interesting platforms for the development of solid-state quantum technologies. Their optical properties are usually probed by measuring photoluminescence spectra, which provide information on excitation energies and on the interaction of electrons with lattice vibrations. We present a combined computational and experimental stud…
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Optically and magnetically active point defects in semiconductors are interesting platforms for the development of solid-state quantum technologies. Their optical properties are usually probed by measuring photoluminescence spectra, which provide information on excitation energies and on the interaction of electrons with lattice vibrations. We present a combined computational and experimental study of photoluminescence spectra of defects in diamond and SiC, aimed at assessing the validity of theoretical and numerical approximations used in first principles calculations, including the use of the Franck-Condon principle and the displaced harmonic oscillator approximation. We focus on prototypical examples of solid-state qubits, the divacancy centers in SiC and the nitrogen-vacancy in diamond, and we report computed photoluminescence spectra as a function of temperature that are in very good agreement with the measured ones. As expected we find that the use of hybrid functionals leads to more accurate results than semilocal functionals. Interestingly our calculations show that constrained density functional theory (CDFT) and time-dependent hybrid DFT perform equally well in describing the excited state potential energy surface of triplet states; our findings indicate that CDFT, a relatively cheap computational approach, is sufficiently accurate for the calculations of photoluminescence spectra of the defects studied here. Finally, we find that only by correcting for finite-size effects and extrapolating to the dilute limit, one can obtain a good agreement between theory and experiment. Our results provide a detailed validation protocol of first principles calculations of photoluminescence spectra, necessary both for the interpretation of experiments and for robust predictions of the electronic properties of point defects in semiconductors.
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Submitted 9 August, 2021; v1 submitted 16 June, 2021;
originally announced June 2021.
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Qubit guidelines for solid-state spin defects
Authors:
Gary Wolfowicz,
F. Joseph Heremans,
Christopher P. Anderson,
Shun Kanai,
Hosung Seo,
Adam Gali,
Giulia Galli,
David D. Awschalom
Abstract:
Defects with associated electron and nuclear spins in solid-state materials have a long history relevant to quantum information science going back to the first spin echo experiments with silicon dopants in the 1950s. Since the turn of the century, the field has rapidly spread to a vast array of defects and host crystals applicable to quantum communication, sensing, and computing. From simple spin…
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Defects with associated electron and nuclear spins in solid-state materials have a long history relevant to quantum information science going back to the first spin echo experiments with silicon dopants in the 1950s. Since the turn of the century, the field has rapidly spread to a vast array of defects and host crystals applicable to quantum communication, sensing, and computing. From simple spin resonance to long-distance remote entanglement, the complexity of working with spin defects is fast advancing, and requires an in-depth understanding of their spin, optical, charge, and material properties in this modern context. This is especially critical for discovering new relevant systems dedicated to specific quantum applications. In this review, we therefore expand upon all the key components with an emphasis on the properties of defects and the host material, on engineering opportunities and other pathways for improvement. Finally, this review aims to be as defect and material agnostic as possible, with some emphasis on optical emitters, providing a broad guideline for the field of solid-state spin defects for quantum information.
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Submitted 30 October, 2020;
originally announced October 2020.
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Universal coherence protection in a solid-state spin qubit
Authors:
Kevin C. Miao,
Joseph P. Blanton,
Christopher P. Anderson,
Alexandre Bourassa,
Alexander L. Crook,
Gary Wolfowicz,
Hiroshi Abe,
Takeshi Ohshima,
David D. Awschalom
Abstract:
Decoherence largely limits the physical realization of qubits and its mitigation is critical to quantum science. Here, we construct a robust qubit embedded in a decoherence-protected subspace, obtained by hybridizing an applied microwave drive with the ground-state electron spin of a silicon carbide divacancy defect. The qubit is protected from magnetic, electric, and temperature fluctuations, whi…
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Decoherence largely limits the physical realization of qubits and its mitigation is critical to quantum science. Here, we construct a robust qubit embedded in a decoherence-protected subspace, obtained by hybridizing an applied microwave drive with the ground-state electron spin of a silicon carbide divacancy defect. The qubit is protected from magnetic, electric, and temperature fluctuations, which account for nearly all relevant decoherence channels in the solid state. This culminates in an increase of the qubit's inhomogeneous dephasing time by over four orders of magnitude (to > 22 milliseconds), while its Hahn-echo coherence time approaches 64 milliseconds. Requiring few key platform-independent components, this result suggests that substantial coherence improvements can be achieved in a wide selection of quantum architectures.
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Submitted 12 May, 2020;
originally announced May 2020.
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SiC Cantilevers For Generating Uniaxial Stress
Authors:
Boyang Jiang,
Noah Opondo,
Gary Wolfowicz,
Pen-Li Yu,
David D. Awschalom,
Sunil A. Bhave
Abstract:
This paper demonstrates the first beam resonators fabricated from bulk high purity semi-insulating 4H Silicon Carbide wafers (HPSI 4H-SiC). Our innovations include: (1) Multi-level front-side, back-side inductively coupled plasma-deep reactive ion etching (ICP-DRIE) technology to fabricate thin, low-mass, bending-mode resonators framed by the SiC substrate (2) Laser Doppler Vibrometer (LDV) measur…
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This paper demonstrates the first beam resonators fabricated from bulk high purity semi-insulating 4H Silicon Carbide wafers (HPSI 4H-SiC). Our innovations include: (1) Multi-level front-side, back-side inductively coupled plasma-deep reactive ion etching (ICP-DRIE) technology to fabricate thin, low-mass, bending-mode resonators framed by the SiC substrate (2) Laser Doppler Vibrometer (LDV) measurements of mechanical quality factors (Q) > 10,000 with frequencies ranging from 300 kHz to 8MHz and (3) Calculated uniaxial in-plane surface stress 20 MPa at top surface of resonator base when operating at resonance in vacuum.
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Submitted 19 November, 2019;
originally announced November 2019.
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Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide
Authors:
Berk Diler,
Samuel J. Whiteley,
Christopher P. Anderson,
Gary Wolfowicz,
Marie E. Wesson,
Edward S. Bielejec,
F. Joseph Heremans,
David Awschalom
Abstract:
Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commer…
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Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commercial 4H-SiC and show optimal defect activation after annealing above 1600 C. We measure an ensemble optical hole linewidth of 31 MHz, an order of magnitude improvement compared to as-grown samples. An in-depth exploration of optical and spin dynamics reveals efficient spin polarization, coherent control, and readout with high fidelity (79%). We report T1 times greater than 1 second at cryogenic temperatures (15 K) with a T2* = 317 nanoseconds and a T2 = 81 microseconds, where spin dephasing times are currently limited by spin-spin interactions within the defect ensemble. Our results demonstrate the potential of Cr4+ in SiC as an extrinsic, optically active spin qubit.
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Submitted 18 September, 2019;
originally announced September 2019.
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Vanadium spin qubits as telecom quantum emitters in silicon carbide
Authors:
Gary Wolfowicz,
Christopher P. Anderson,
Berk Diler,
Oleg G. Poluektov,
F. Joseph Heremans,
David D. Awschalom
Abstract:
Solid state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O-band (1278-1388 nm), with brightness allowing cavity-free detection in a wafer-scale CMOS-c…
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Solid state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O-band (1278-1388 nm), with brightness allowing cavity-free detection in a wafer-scale CMOS-compatible material. In vanadium ensembles, we characterize the complex d1 orbital physics in all five available sites in 4H-SiC and 6H-SiC. The optical transitions are sensitive to mass shifts from local silicon and carbon isotopes, enabling optically resolved nuclear spin registers. Optically detected magnetic resonance in the ground and excited orbital states reveals a variety of hyperfine interactions with the vanadium nuclear spin and clock transitions for quantum memories. Finally, we demonstrate coherent quantum control of the spin state. These results provide a path for telecom emitters in the solid-state for quantum applications.
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Submitted 26 August, 2019;
originally announced August 2019.
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Heterodyne detection of radio-frequency electric fields using point defects in silicon carbide
Authors:
Gary Wolfowicz,
Christopher P. Anderson,
Samuel J. Whiteley,
David D. Awschalom
Abstract:
Sensing electric fields with high sensitivity, high spatial resolution and at radio frequencies can be challenging to realize. Recently, point defects in silicon carbide have shown their ability to measure local electric fields by optical charge conversion of their charge state. Here we report the combination of heterodyne detection with charge-based electric field sensing, solving many of the pre…
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Sensing electric fields with high sensitivity, high spatial resolution and at radio frequencies can be challenging to realize. Recently, point defects in silicon carbide have shown their ability to measure local electric fields by optical charge conversion of their charge state. Here we report the combination of heterodyne detection with charge-based electric field sensing, solving many of the previous limitations of this technique. Owing to the non-linear response of the charge conversion to electric fields, the application of a separate "pump" electric field results in a detection sensitivity as low as 1.1 (V/cm)/$\sqrt{Hz}$, with near-diffraction limited spatial resolution and tunable control of the sensor dynamic range. In addition, we show both incoherent and coherent heterodyne detection, allowing measurements of either unknown random fields or synchronized fields with higher sensitivities. Finally, we demonstrate in-plane vector measurements of the electric field by combining orthogonal pump electric fields. Overall, this work establishes charge-based measurements as highly relevant for solid-state defect sensing.
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Submitted 2 July, 2019;
originally announced July 2019.
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Electrical and optical control of single spins integrated in scalable semiconductor devices
Authors:
Christopher P. Anderson,
Alexandre Bourassa,
Kevin C. Miao,
Gary Wolfowicz,
Peter J. Mintun,
Alexander L. Crook,
Hiroshi Abe,
Jawad Ul Hassan,
Nguyen T. Son,
Takeshi Ohshima,
David D. Awschalom
Abstract:
Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricate diodes to modulate the local electrical environment of the defect…
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Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricate diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge state control and broad Stark shift tuning exceeding 850 GHz. Surprisingly, we show that charge depletion results in a narrowing of the optical linewidths by over 50 fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while utilizing classical semiconductor devices to control scalable spin-based quantum systems.
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Submitted 19 June, 2019;
originally announced June 2019.
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Electrically driven optical interferometry with spins in silicon carbide
Authors:
Kevin C. Miao,
Alexandre Bourassa,
Christopher P. Anderson,
Samuel J. Whiteley,
Alexander L. Crook,
Sam L. Bayliss,
Gary Wolfowicz,
Gergo Thiering,
Peter Udvarhelyi,
Viktor Ivady,
Hiroshi Abe,
Takeshi Ohshima,
Adam Gali,
David D. Awschalom
Abstract:
Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The ground-state spin's weak coupling to its environment bestows excellent coherence properties, but also limits desired drive fields. The excited-state orbitals of these electrons, however, can exhibit stronger coupling to phononic and electric fields. Here, we demonstrate electrically driven coherent…
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Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The ground-state spin's weak coupling to its environment bestows excellent coherence properties, but also limits desired drive fields. The excited-state orbitals of these electrons, however, can exhibit stronger coupling to phononic and electric fields. Here, we demonstrate electrically driven coherent quantum interference in the optical transition of single, basally oriented divacancies in commercially available 4H silicon carbide. By applying microwave frequency electric fields, we coherently drive the divacancy's excited-state orbitals and induce Landau-Zener-Stuckelberg interference fringes in the resonant optical absorption spectrum. Additionally, we find remarkably coherent optical and spin subsystems enabled by the basal divacancy's symmetry. These properties establish divacancies as strong candidates for quantum communication and hybrid system applications, where simultaneous control over optical and spin degrees of freedom is paramount.
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Submitted 29 May, 2019;
originally announced May 2019.
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Correlating dynamic strain and photoluminescence of solid-state defects with stroboscopic x-ray diffraction microscopy
Authors:
S. J. Whiteley,
F. J. Heremans,
G. Wolfowicz,
D. D. Awschalom,
M. V. Holt
Abstract:
Control of local lattice perturbations near optically-active defects in semiconductors is a key step to harnessing the potential of solid-state qubits for quantum information science and nanoscale sensing. We report the development of a stroboscopic scanning X-ray diffraction microscopy approach for real-space imaging of dynamic strain used in correlation with microscopic photoluminescence measure…
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Control of local lattice perturbations near optically-active defects in semiconductors is a key step to harnessing the potential of solid-state qubits for quantum information science and nanoscale sensing. We report the development of a stroboscopic scanning X-ray diffraction microscopy approach for real-space imaging of dynamic strain used in correlation with microscopic photoluminescence measurements. We demonstrate this technique in 4H-SiC, which hosts long-lifetime room temperature vacancy spin defects. Using nano-focused X-ray photon pulses synchronized to a surface acoustic wave launcher, we achieve an effective time resolution of 100 ps at a 25 nm spatial resolution to map micro-radian dynamic lattice curvatures. The acoustically induced lattice distortions near an engineered scattering structure are correlated with enhanced photoluminescence responses of optically-active SiC quantum defects driven by local piezoelectric effects. These results demonstrate a unique route for directly imaging local strain in nanomechanical structures and quantifying dynamic structure-function relationships in materials under realistic operating conditions.
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Submitted 29 July, 2019; v1 submitted 14 August, 2018;
originally announced August 2018.
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Probing spin-phonon interactions in silicon carbide with Gaussian acoustics
Authors:
Samuel J. Whiteley,
Gary Wolfowicz,
Christopher P. Anderson,
Alexandre Bourassa,
He Ma,
Meng Ye,
Gerwin Koolstra,
Kevin J. Satzinger,
Martin V. Holt,
F. Joseph Heremans,
Andrew N. Cleland,
David I. Schuster,
Giulia Galli,
David D. Awschalom
Abstract:
Hybrid spin-mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the individual spin and mechanical components as well as their mutual interactions. Point defects in silicon carbide (SiC) offer long-lived, optically addressable spin registers in a wafer-scale material with lo…
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Hybrid spin-mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the individual spin and mechanical components as well as their mutual interactions. Point defects in silicon carbide (SiC) offer long-lived, optically addressable spin registers in a wafer-scale material with low acoustic losses, making them natural candidates for integration with high quality factor mechanical resonators. Here, we show Gaussian focusing of a surface acoustic wave in SiC, characterized by a novel stroboscopic X-ray diffraction imaging technique, which delivers direct, strain amplitude information at nanoscale spatial resolution. Using ab initio calculations, we provide a more complete picture of spin-strain coupling for various defects in SiC with C3v symmetry. This reveals the importance of shear for future device engineering and enhanced spin-mechanical coupling. We demonstrate all-optical detection of acoustic paramagnetic resonance without microwave magnetic fields, relevant to sensing applications. Finally, we show mechanically driven Autler-Townes splittings and magnetically forbidden Rabi oscillations. These results offer a basis for full strain control of three-level spin systems.
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Submitted 4 August, 2018; v1 submitted 29 April, 2018;
originally announced April 2018.
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Electrometry by optical charge conversion of deep defects in 4H-SiC
Authors:
G. Wolfowicz,
S. J. Whiteley,
D. D. Awschalom
Abstract:
Optically-active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain and temperature. Current sensing techniques take advantage of the relaxation and coherence times of the spin state within these defects. Here we show that the defect charge state can also be used to sense th…
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Optically-active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain and temperature. Current sensing techniques take advantage of the relaxation and coherence times of the spin state within these defects. Here we show that the defect charge state can also be used to sense the environment, in particular high frequency (MHz-GHz) electric fields, complementing established spin-based techniques. This is enabled by optical charge conversion of the defects between their photoluminescent and dark charge states, with conversion rate dependent on the electric field (energy density). The technique provides an all-optical high frequency electrometer which is tested in 4H-SiC for both ensembles of divacancies and silicon vacancies, from cryogenic to room temperature, and with a measured sensitivity of ~41 (V/cm)**2 / $\sqrt{Hz}$. Finally, due to the piezoelectric character of SiC, we obtain spatial 3D maps of surface acoustic wave modes in a mechanical resonator.
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Submitted 15 March, 2018;
originally announced March 2018.
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Optical charge state control of spin defects in 4H-SiC
Authors:
Gary Wolfowicz,
Christopher P. Anderson,
Andrew L. Yeats,
Samuel J. Whiteley,
Jens Niklas,
Oleg G. Poluektov,
F. Joseph Heremans,
David D. Awschalom
Abstract:
Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability of the qubits. We investigate this charge state control for two major spin qubits in 4H-SiC, the…
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Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability of the qubits. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy (VV) and silicon vacancy (Vsi), obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from VV ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading the electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the relative charge state populations. We develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC.
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Submitted 26 May, 2017;
originally announced May 2017.
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$^{29}$Si nuclear spins as a resource for donor spin qubits in silicon
Authors:
Gary Wolfowicz,
Pierre-Andre Mortemousque,
Roland Guichard,
Stephanie Simmons,
Mike L. W. Thewalt,
Kohei M. Itoh,
John J. L. Morton
Abstract:
Nuclear spin registers in the vicinity of electron spins in solid state systems offer a powerful resource to address the challenge of scalability in quantum architectures. We investigate here the properties of $^{29}$Si nuclear spins surrounding donor atoms in silicon, and consider the use of such spins, combined with the donor nuclear spin, as a quantum register coupled to the donor electron spin…
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Nuclear spin registers in the vicinity of electron spins in solid state systems offer a powerful resource to address the challenge of scalability in quantum architectures. We investigate here the properties of $^{29}$Si nuclear spins surrounding donor atoms in silicon, and consider the use of such spins, combined with the donor nuclear spin, as a quantum register coupled to the donor electron spin. We find the coherence of the nearby $^{29}$Si nuclear spins is effectively protected by the presence of the donor electron spin, leading to coherence times in the second timescale - over two orders of magnitude greater than the coherence times in bulk silicon. We theoretically investigate the use of such a register for quantum error correction, including methods to protect nuclear spins from the ionisation/neutralisation of the donor, which is necessary for the re-initialisation of the ancillae qubits. This provides a route for multi-round quantum error correction using donors in silicon.
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Submitted 8 May, 2015;
originally announced May 2015.
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The classical nature of nuclear spin noise near clock transitions of Bi donors in silicon
Authors:
Wen-Long Ma,
Gary Wolfowicz,
Shu-Shen Li,
John J. L. Morton,
Ren-Bao Liu
Abstract:
Whether a quantum bath can be approximated as classical noise is a fundamental issue in central spin decoherence and also of practical importance in designing noise-resilient quantum control. Spin qubits based on bismuth donors in silicon have tunable interactions with nuclear spin baths and are first-order insensitive to magnetic noise at so-called clock-transitions (CTs). This system is therefor…
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Whether a quantum bath can be approximated as classical noise is a fundamental issue in central spin decoherence and also of practical importance in designing noise-resilient quantum control. Spin qubits based on bismuth donors in silicon have tunable interactions with nuclear spin baths and are first-order insensitive to magnetic noise at so-called clock-transitions (CTs). This system is therefore ideal for studying the quantum/classical nature of nuclear spin baths since the qubit-bath interaction strength determines the back-action on the baths and hence the adequacy of a classical noise model. We develop a Gaussian noise model with noise correlations determined by quantum calculations and compare the classical noise approximation to the full quantum bath theory. We experimentally test our model through dynamical decoupling sequence of up to 128 pulses, finding good agreement with simulations and measuring electron spin coherence times approaching one second - notably using natural silicon. Our theoretical and experimental study demonstrates that the noise from a nuclear spin bath is analogous to classical Gaussian noise if the back-action of the qubit on the bath is small compared to the internal bath dynamics, as is the case close to CTs. However, far from the CTs, the back-action of the central spin on the bath is such that the quantum model is required to accurately model spin decoherence.
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Submitted 7 May, 2015;
originally announced May 2015.
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Spin relaxation and donor-acceptor recombination of Se$^+$ in 28-silicon
Authors:
Roberto Lo Nardo,
Gary Wolfowicz,
Stephanie Simmons,
Alexei M. Tyryshkin,
Helge Riemann,
Nikolai V. Abrosimov,
Peter Becker,
Hans-Joachim Pohl,
Michael Steger,
Stephen A. Lyon,
Mike L. W. Thewalt,
John J. L. Morton
Abstract:
Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studie…
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Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation ($T_1$) and coherence ($T_2$) times of Se$^{+}$ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above $\sim 15$ K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se$^0$.
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Submitted 1 May, 2015; v1 submitted 19 March, 2015;
originally announced March 2015.
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Decoherence of nuclear spins in the "frozen core" of an electron spin
Authors:
R. Guichard,
S. J. Balian,
G. Wolfowicz,
P. A. Mortemousque,
T. S. Monteiro
Abstract:
Hybrid qubit systems combining electronic spins with nearby ("proximate") nuclear spin registers offer a promising avenue towards quantum information processing, with even multi-spin error correction protocols recently demonstrated in diamond. However, for the important platform offered by spins of donor atoms in cryogenically-cooled silicon,decoherence mechanisms of $^{29}$Si proximate nuclear sp…
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Hybrid qubit systems combining electronic spins with nearby ("proximate") nuclear spin registers offer a promising avenue towards quantum information processing, with even multi-spin error correction protocols recently demonstrated in diamond. However, for the important platform offered by spins of donor atoms in cryogenically-cooled silicon,decoherence mechanisms of $^{29}$Si proximate nuclear spins are not yet well understood.The reason is partly because proximate spins lie within a so-called "frozen core" region where the donor electronic hyperfine interaction strongly suppresses nuclear dynamics. We investigate the decoherence of a central proximate nuclear qubit arising from quantum spin baths outside, as well as inside, the frozen core around the donor electron. We consider the effect of a very large nuclear spin bath comprising many ($\gtrsim 10^8$) weakly contributing pairs outside the frozen core. We also propose that there may be an important contribution from a few (of order $100$) symmetrically sited nuclear spin pairs ("equivalent pairs"), which were not previously considered as their effect is negligible outside the frozen core. If equivalent pairs represent a measurable source of decoherence, nuclear coherence decays could provide sensitive probes of the symmetries of electronic wavefunctions. For the phosphorus donor system, we obtain $T_{2n}$ values of order 1 second for both the "far bath" and "equivalent pair" models, confirming the suitability of proximate nuclei in silicon as very long-lived spin qubits.
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Submitted 13 May, 2015; v1 submitted 30 September, 2014;
originally announced September 2014.
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Hyperfine Stark effect of shallow donors in silicon
Authors:
G. Pica,
G. Wolfowicz,
M. Urdampilleta,
M. L. W. Thewalt,
H. Riemann,
N. V. Abrosimov,
P. Becker,
H. -J. Pohl,
J. J. L. Morton,
R. N. Bhatt,
S. A. Lyon,
B. W. Lovett
Abstract:
We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. V…
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We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. Variational optimization of the 1s donor binding energies calculated with a new trial wave function, in a pseudopotential with two fitting parameters, allows an accurate match of the experimentally determined donor energy levels, while the correct limiting behavior for the electronic density, both close to and far from each impurity nucleus, is captured by fitting the measured contact hyperfine coupling between the donor nuclear and electron spin.
We go on to include an external uniform electric field in order to model Stark physics: With no extra ad hoc parameters, variational minimization of the complete donor ground energy allows a quantitative description of the field-induced reduction of electronic density at each impurity nucleus. Detailed comparisons with experimental values for the shifts of the contact hyperfine coupling reveal very close agreement for all the donors measured (P, As, Sb and Bi). Finally, we estimate field ionization thresholds for the donor ground states, thus setting upper limits to the gate manipulation times for single qubit operations in Kane-like architectures: the Si:Bi system is shown to allow for A gates as fast as around 10 MHz.
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Submitted 19 August, 2014;
originally announced August 2014.
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Conditional control of donor nuclear spins in silicon using Stark shifts
Authors:
Gary Wolfowicz,
Matias Urdampilleta,
Mike L. W. Thewalt,
Helge Riemann,
Nikolai V. Abrosimov,
Peter Becker,
Hans-Joachim Pohl,
John J. L. Morton
Abstract:
Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear spin. We present a technique based on dynamic decoupling of the electron spin to accurately determine the Stark shift, and illustrate this using antimony donors…
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Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear spin. We present a technique based on dynamic decoupling of the electron spin to accurately determine the Stark shift, and illustrate this using antimony donors in isotopically purified silicon-28. We then demonstrate two different methods to use a DC electric field combined with an applied resonant radio-frequency (RF) field to conditionally control donor nuclear spins. The first method combines an electric-field induced conditional phase gate with standard RF pulses, and the second one simply detunes the spins off-resonance. Finally, we consider different strategies to reduce the effect of electric field inhomogeneities and obtain above 90% process fidelities.
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Submitted 28 May, 2014;
originally announced May 2014.
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Uncovering many-body correlations in nanoscale nuclear spin baths by central spin decoherence
Authors:
Wen-Long Ma,
Gary Wolfowicz,
Nan Zhao,
Shu-Shen Li,
John J. L. Morton,
Ren-Bao Liu
Abstract:
Many-body correlations can yield key insights into the nature of interacting systems; however, detecting them is often very challenging in many-particle physics, especially in nanoscale systems. Here, taking a phosphorus donor electron spin in a natural-abundance 29Si nuclear spin bath as our model system, we discover both theoretically and experimentally that many-body correlations in nanoscale n…
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Many-body correlations can yield key insights into the nature of interacting systems; however, detecting them is often very challenging in many-particle physics, especially in nanoscale systems. Here, taking a phosphorus donor electron spin in a natural-abundance 29Si nuclear spin bath as our model system, we discover both theoretically and experimentally that many-body correlations in nanoscale nuclear spin baths produce identifiable signatures in the decoherence of the central spin under multiple-pulse dynamical decoupling control. We find that when the number of decoupling -pulses is odd, central spin decoherence is primarily driven by second-order nuclear spin correlations (pairwise flip-flop processes). In contrast, when the number of -pulses is even, fourth-order nuclear spin correlations (diagonal interaction renormalized pairwise flip-flop processes) are principally responsible for the central spin decoherence. Many-body correlations of different orders can thus be selectively detected by central spin decoherence under different dynamical decoupling controls, providing a useful approach to probing many-body processes in nanoscale nuclear spin baths.
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Submitted 10 April, 2014;
originally announced April 2014.
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Quantum bath-driven decoherence of mixed spin systems
Authors:
S. J. Balian,
Gary Wolfowicz,
John J. L. Morton,
T. S. Monteiro
Abstract:
The decoherence of mixed electron-nuclear spin qubits is a topic of great current importance, but understanding is still lacking: while important decoherence mechanisms for spin qubits arise from quantum spin bath environments with slow decay of correlations, the only analytical framework for explaining observed sharp variations of decoherence times with magnetic field is based on the suppression…
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The decoherence of mixed electron-nuclear spin qubits is a topic of great current importance, but understanding is still lacking: while important decoherence mechanisms for spin qubits arise from quantum spin bath environments with slow decay of correlations, the only analytical framework for explaining observed sharp variations of decoherence times with magnetic field is based on the suppression of classical noise. Here we obtain a general expression for decoherence times of the central spin system which exposes significant differences between quantum-bath decoherence and decoherence by classical field noise. We perform measurements of decoherence times of bismuth donors in natural silicon using both electron spin resonance (ESR) and nuclear magnetic resonance (NMR) transitions, and in both cases find excellent agreement with our theory across a wide parameter range. The universality of our expression is also tested by quantitative comparisons with previous measurements of decoherence around `optimal working points' or `clock transitions' where decoherence is strongly suppressed. We further validate our results by comparison to cluster expansion simulations.
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Submitted 22 November, 2013; v1 submitted 7 February, 2013;
originally announced February 2013.
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Atomic clock transitions in silicon-based spin qubits
Authors:
Gary Wolfowicz,
Alexei M. Tyryshkin,
Richard E. George,
Helge Riemann,
Nikolai V. Abrosimov,
Peter Becker,
Hans-Joachim Pohl,
Mike L. W. Thewalt,
Stephen A. Lyon,
John J. L. Morton
Abstract:
A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or active error correction methods such as dynamic decoupling, or even combinations of the two. However, a powerful method applied to trapped ions in the context of f…
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A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or active error correction methods such as dynamic decoupling, or even combinations of the two. However, a powerful method applied to trapped ions in the context of frequency standards and atomic clocks, is the use of particular spin transitions which are inherently robust to external perturbations. Here we show that such `clock transitions' (CTs) can be observed for electron spins in the solid state, in particular using bismuth donors in silicon. This leads to dramatic enhancements in the electron spin coherence time, exceeding seconds. We find that electron spin qubits based on CTs become less sensitive to the local magnetic environment, including the presence of 29Si nuclear spins as found in natural silicon. We expect the use of such CTs will be of additional importance for donor spins in future devices, mitigating the effects of magnetic or electric field noise arising from nearby interfaces.
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Submitted 28 January, 2013;
originally announced January 2013.
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Decoherence mechanisms of 209Bi donor electron spins in isotopically pure 28Si
Authors:
Gary Wolfowicz,
Stephanie Simmons,
Alexei M. Tyryshkin,
Richard E. George,
Helge Riemann,
Nikolai V. Abrosimov,
Peter Becker,
Hans-Joachim Pohl,
Stephen A. Lyon,
Mike L. W. Thewalt,
John J. L. Morton
Abstract:
Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin qubit compared to the more common phosphorus donor. Previous studies on Si:Bi have been performed using natural silicon where linewidths and electron spin cohere…
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Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin qubit compared to the more common phosphorus donor. Previous studies on Si:Bi have been performed using natural silicon where linewidths and electron spin coherence times are limited by the presence of 29Si impurities. Here we describe electron spin resonance (ESR) and electron nuclear double resonance (ENDOR) studies on 209Bi in isotopically pure 28Si. ESR and ENDOR linewidths, transition probabilities and coherence times are understood in terms of the spin Hamiltonian parameters showing a dependence on field and mI of the 209Bi nuclear spin. We explore various decoherence mechanisms applicable to the donor electron spin, measuring coherence times up to 700 ms at 1.7 K at X-band, comparable with 28Si:P. The coherence times we measure follow closely the calculated field-sensitivity of the transition frequency, providing a strong motivation to explore 'clock' transitions where coherence lifetimes could be further enhanced.
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Submitted 13 September, 2012; v1 submitted 16 July, 2012;
originally announced July 2012.
