Showing 1–37 of 37 results for author: Wolf, S A

Enhanced spin state readout of Nitrogen-Vacancy centers in diamond using IR fluorescence

Authors: Idan Meirzada, Sigal A. Wolf, Alex Naiman, Uriel Levy, Nir Bar-Gill

Abstract: Nitrogen-Vacancy (NV) centers in diamond have been used in recent years for a wide range of applications, from nano-scale NMR to quantum computation. These applications depend strongly on the efficient readout of the NV center's spin state, which is currently limited. Here we suggest a method of reading the NV center's spin state, using the weak optical transition in the singlet manifold. We numer… ▽ More Nitrogen-Vacancy (NV) centers in diamond have been used in recent years for a wide range of applications, from nano-scale NMR to quantum computation. These applications depend strongly on the efficient readout of the NV center's spin state, which is currently limited. Here we suggest a method of reading the NV center's spin state, using the weak optical transition in the singlet manifold. We numerically calculate the number of photons collected from each spin state using this technique, and show that an order of magnitude enhancement in spin readout signal-to-noise ratio is expected, making single-shot spin readout within reach. Thus, this method could lead to an order of magnitude enhancement in sensitivity for ubiquitous NV based sensing applications, and remove a major obstacle from using NVs for quantum information processing. △ Less

Submitted 12 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. B 100, 125436 (2019)

Nano-engineering of electron correlation in oxide superlattices

Authors: J. Laverock, M. Gu, V. Jovic, J. W. Lu, S. A. Wolf, R. M. Qiao, W. Yang, K. E. Smith

Abstract: Oxide heterostructures and superlattices have attracted a great deal of attention in recent years owing to the rich exotic properties encountered at their interfaces. We focus on the potential of tunable correlated oxides by investigating the spectral function of the prototypical correlated metal SrVO3, using soft x-ray absorption spectroscopy (XAS) and resonant inelastic soft x-ray scattering (RI… ▽ More Oxide heterostructures and superlattices have attracted a great deal of attention in recent years owing to the rich exotic properties encountered at their interfaces. We focus on the potential of tunable correlated oxides by investigating the spectral function of the prototypical correlated metal SrVO3, using soft x-ray absorption spectroscopy (XAS) and resonant inelastic soft x-ray scattering (RIXS) to access both unoccupied and occupied electronic states, respectively. We demonstrate a remarkable level of tunability in the spectral function of SrVO3 by varying its thickness within the SrVO3/SrTiO3 superlattice, showing that the effects of electron correlation can be tuned from dominating the energy spectrum in a strongly correlated Mott-Hubbard insulator, towards a correlated metal. We show that the effects of dimensionality on the correlated properties of SrVO3 are augmented by interlayer coupling, yielding a highly flexible correlated oxide that may be readily married with other oxide systems. △ Less

Submitted 14 March, 2019; originally announced March 2019.

Journal ref: Nano Futures 1, 031001 (2017)

Observation of weakened V-V dimers in the monoclinic metallic phase of strained VO2

Authors: J. Laverock, V. Jovic, A. A. Zakharov, Y. R. Niu, S. Kittiwatanakul, B. Westhenry, J. W. Lu, S. A. Wolf, K. E. Smith

Abstract: Emergent order at mesoscopic length scales in condensed matter can provide fundamental insight into the underlying competing interactions and their relationship with the order parameter. Using spectromicroscopy, we show that mesoscopic stripe order near the metal-insulator transition (MIT) of strained VO2 represent periodic modulations in both crystal symmetry and V-V dimerization. Above the MIT,… ▽ More Emergent order at mesoscopic length scales in condensed matter can provide fundamental insight into the underlying competing interactions and their relationship with the order parameter. Using spectromicroscopy, we show that mesoscopic stripe order near the metal-insulator transition (MIT) of strained VO2 represent periodic modulations in both crystal symmetry and V-V dimerization. Above the MIT, we unexpectedly find the long range order of V-V dimer strength and crystal symmetry become dissociated beyond ~ 200 nm, whereas the conductivity transition proceeds homogeneously in a narrow temperature range. △ Less

Submitted 13 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. Lett. 121, 256403 (2018)

Negative charge enhancement of near-surface nitrogen vacancy centers by multicolor excitation

Authors: I. Meirzada, Y. Hovav, S. A. Wolf, N. Bar-Gill

Abstract: Nitrogen-Vacancy (NV) centers in diamond have been identified over the past few years as promising systems for a variety of applications, ranging from quantum information science to magnetic sensing. This relies on the unique optical and spin properties of the negatively charged NV. Many of these applications require shallow NV centers, i.e. NVs that are close (a few nm) to the diamond surface. In… ▽ More Nitrogen-Vacancy (NV) centers in diamond have been identified over the past few years as promising systems for a variety of applications, ranging from quantum information science to magnetic sensing. This relies on the unique optical and spin properties of the negatively charged NV. Many of these applications require shallow NV centers, i.e. NVs that are close (a few nm) to the diamond surface. In recent years there has been increasing interest in understanding the dynamics of NV centers under various illumination conditions, specifically under infra-red (IR) excitation, which has been demonstrated to have significant impact on the NV centers' emission and charge state. Nevertheless, a full understanding of all experimental data is still lacking, with further complications arising from potential differences between the photo-dynamics of bulk vs. shallow NVs. Here we suggest a generalized quantitative model for NV center spin and charge state dynamics under both green and IR excitation. We experimentally extract the relevant transition rates, providing a comprehensive model which reconciles all existing results in the literature. Moreover, we identify key differences between the photo-dynamics of bulk and shallow NVs, and use them to significantly enhance the initialization fidelity of shallow NVs to the useful negatively-charged state. △ Less

Submitted 4 October, 2017; v1 submitted 14 September, 2017; originally announced September 2017.

Journal ref: Phys. Rev. B 98, 245411 (2018)

Surface morphology and superconductivity of Nb thin films by biased target ion beam deposition

Authors: Salinporn Kittiwatanakul, Nattawut Anuniwat, Nam Dao, Stuart A. Wolf, Jiwei Lu

Abstract: One of many challenges for niobium (Nb) based superconducting devices is the improvement over the surface morphology and superconducting properties as well as the reduction of defects. We employed a novel deposition technique, i.e. biased target ion beam deposition technique (BTIBD) to prepare Nb thin films with controlled crystallinity and surface morphology. We found that the target current (ITa… ▽ More One of many challenges for niobium (Nb) based superconducting devices is the improvement over the surface morphology and superconducting properties as well as the reduction of defects. We employed a novel deposition technique, i.e. biased target ion beam deposition technique (BTIBD) to prepare Nb thin films with controlled crystallinity and surface morphology. We found that the target current (ITarget) and the target bias (VTarget) were critical to the crystallinity and surface morphology of Nb films. The high target current (ITarget >500 mA and VTarget = 400 V bias) during the deposition degraded the Nb crystallinity, and subsequently reduced the critical temperature for superconductivity (Tc). VTarget was critical to the surface morphology, i.e. grain size and shape and the surface roughness. The optimized growth condition yielded very smooth film with RMS roughness of 0.4 nm that was an order of magnitude smoother than that of Nb films by sputtering process. The critical temperature for superconductivity was also close to the value of the bulk Nb. The quality of Nb film was evident in the presence of a very thin proximity layer (~ 0.8 nm). The experimental results demonstrated that the preparation of smooth Nb films with adequate superconductivity by BTIBD could serve as a base electrode for the in-situ magnetic layer or insulating layer for superconducting electronic devices. △ Less

Submitted 10 August, 2017; originally announced August 2017.

Ultrafast Electron-Lattice Coupling Dynamics in VO2 and V2O3 Thin Films

Authors: Elsa Abreu, Stephanie N. Gilbert Corder, Sun ** Yun, Siming Wang, Juan Gabriel Ramirez, Kevin West, **gdi Zhang, Salinporn Kittiwatanakul, Ivan K. Schuller, Jiwei Lu, Stuart A. Wolf, Hyun-Tak Kim, Mengkun Liu, Richard D. Averitt

Abstract: Ultrafast optical pump - optical probe and optical pump - terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the electronic oscillations generated by the photoinduced l… ▽ More Ultrafast optical pump - optical probe and optical pump - terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the electronic oscillations generated by the photoinduced longitudinal acoustic modulation, reveals the strong electron-phonon coupling that exists in the metallic state of both materials. The low energy Drude response of V2O3 appears more susceptible than VO2 to ultrafast strain control. Additionally, our results provide a measurement of the temperature dependence of the sound velocity in both systems, revealing a four- to fivefold increase in VO2 and a three- to fivefold increase in V2O3 across the phase transition. Our data also confirm observations of strong dam** and phonon anharmonicity in the metallic phase of VO2, and suggest that a similar phenomenon might be at play in the metallic phase of V2O3. More generally, our simple table-top approach provides relevant and detailed information about dynamical lattice properties of vanadium oxides, opening the way to similar studies in other complex materials. △ Less

Submitted 19 January, 2017; originally announced January 2017.

Comments: 21 pages, 5 figures, supplemental material included

Journal ref: Phys. Rev. B 96, 094309 (2017)

Magneto-transport and domain wall scattering in epitaxy $L1_{0}$ MnAl thin film

Authors: Linqiang Luo, Nattawut Anuniwat, Nam Dao, Yishen Cui, Stuart A. Wolf, Jiwei Lu

Abstract: This work demonstrated two different kinds of magneto-transport behaviors in epitaxial $L1_{0}$ MnAl film as a function of temperature. The magneto-resistance ratio (MR) was negative and exhibited evident enhancement in the resistivity at coercive fields above 175 K. The MR enhancement was attributed to the increase of the magnetic domain walls based on the quantitative correlation between the dom… ▽ More This work demonstrated two different kinds of magneto-transport behaviors in epitaxial $L1_{0}$ MnAl film as a function of temperature. The magneto-resistance ratio (MR) was negative and exhibited evident enhancement in the resistivity at coercive fields above 175 K. The MR enhancement was attributed to the increase of the magnetic domain walls based on the quantitative correlation between the domain density and the resistivity. Below 175 K, the MR was positive and showed a quadratic dependence on the external magnetic field, which implied that the MR was dominated by Lorentz effects. △ Less

Submitted 25 October, 2016; originally announced October 2016.

Comments: 15 pages, 5 figures

Journal ref: J. Appl. Phys. 119, 103902 (2016)

Spin-torque switching in large size nano-magnet with perpendicular magnetic fields

Authors: Linqiang Luo, Mehdi Kabir, Nam Dao, Salinporn Kittiwatanakul, Michael Cyberey, Stuart A. Wolf, Mircea Stan, Jiwei Lu

Abstract: DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer (Co90Fe10) and free layer (Ni80Fe20) in the pseudo spin valve, allowing a large window of external magnetic field for exploring the free-layer reversal. The magnetiza… ▽ More DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer (Co90Fe10) and free layer (Ni80Fe20) in the pseudo spin valve, allowing a large window of external magnetic field for exploring the free-layer reversal. The magnetization precession was manifested in terms of the multiple peaks on the differential resistance curves. Depending on the bias current and applied field, the regions of magnetic switching and magnetization precession on a dynamical stability diagram has been discussed in details. Micromagnetic simulations are shown to be in good agreement with experimental results and provide insight for synchronization of inhomogenieties in large sized device. The ability to manipulate spin-dynamics on large size devices could prove useful for increasing the output power of the spin-transfer nano-oscillators (STNOs). △ Less

Submitted 21 October, 2016; originally announced October 2016.

Comments: 12 pages, 4 figures. This work has been presented in APS March meeting, Baltimore, Mar 14-18, 2016

Directed Self-Assembly of Epitaxial CoFe2O4-BiFeO3 Multiferroic Nanocomposites

Authors: Ryan Comes, Hongxue Liu, Mikhail Khokhlov, Richard Kasica, Jiwei Lu, Stuart A. Wolf

Abstract: CoFe${}_{2}$O${}_{4}$ (CFO)-BiFeO${}_{3}$ (BFO) nanocomposites are an intriguing option for future memory and logic technologies due to the magnetoelctric properties of the system. However, these nanocomposites form with CFO pillars randomly located within a BFO matrix, making implementation in devices difficult. To overcome this, we present a technique to produce patterned nanocomposites through… ▽ More CoFe${}_{2}$O${}_{4}$ (CFO)-BiFeO${}_{3}$ (BFO) nanocomposites are an intriguing option for future memory and logic technologies due to the magnetoelctric properties of the system. However, these nanocomposites form with CFO pillars randomly located within a BFO matrix, making implementation in devices difficult. To overcome this, we present a technique to produce patterned nanocomposites through self-assembly. CFO islands are patterned on Nb-doped SrTiO${}_{3}$ to direct the self-assembly of epitaxial CFO-BFO nanocomposites, producing square arrays of CFO pillars. △ Less

Submitted 25 October, 2015; originally announced October 2015.

Comments: 17 pages, 6 figures; Supplement: 6 pages, 1 figure

Journal ref: Nano Letters, 12 (5), 2367 (2012)

Phase transition in bulk single crystals and thin films of VO2 by nano-infrared spectroscopy and imaging

Authors: Mengkun Liu, Aaron J. Sternbach, Martin Wagner, Tetiana V. Slusar, Tai Kong, Sergey L. Bud'ko, Salinporn Kittiwatanakul, M. M. Qazilbash, Alexander McLeod, Zhe Fei, Elsa Abreu, **gdi Zhang, Michael Goldflam, Siyuan Dai, Guang-Xin Ni, Jiwei Lu, Hans A. Bechtel, Michael C. Martin, Markus B. Raschke, Richard D. Averitt, Stuart A. Wolf, Hyun-Tak Kim, Paul C. Canfield, D. N. Basov

Abstract: We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic responses of electrons and phonons in VO2 with sub-grain-size spatial resolution (~20 nm), we show that epitaxial strain in VO2 thin films not only triggers sp… ▽ More We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic responses of electrons and phonons in VO2 with sub-grain-size spatial resolution (~20 nm), we show that epitaxial strain in VO2 thin films not only triggers spontaneous local phase separations but also leads to intermediate electronic and lattice states that are intrinsically different from those found in bulk. Generalized rules of strain and symmetry dependent mesoscopic phase inhomogeneity are also discussed. These results set the stage for a comprehensive understanding of complex energy landscapes that may not be readily determined by macroscopic approaches. △ Less

Submitted 15 June, 2015; originally announced June 2015.

Comments: 8 figures + 2 supplemental figures Accepted by Phys. Rev. B

Purcell-enhanced optical spin readout of Nitrogen-Vacancy centers in diamond

Authors: Sigal A. Wolf, Itamar Rosenberg, Ronen Rapaport, Nir Bar-Gill

Abstract: Nitrogen-Vacancy (NV) color centers in diamond have emerged as promising quantum solid-state systems, with applications ranging from quantum information processing to magnetic sensing. One of the most useful properties of NVs is the ability to read their ground-state spin projection optically at room temperature. This work provides a theoretical analysis of Purcell enhanced NV optical coupling, th… ▽ More Nitrogen-Vacancy (NV) color centers in diamond have emerged as promising quantum solid-state systems, with applications ranging from quantum information processing to magnetic sensing. One of the most useful properties of NVs is the ability to read their ground-state spin projection optically at room temperature. This work provides a theoretical analysis of Purcell enhanced NV optical coupling, through which we find optimal parameters for maximal Signal to Noise Ratio (SNR) of the optical spin-state readout. We conclude that a combined increase in spontaneous emission (through Purcell enhancement) and in optical excitation could significantly increase the readout SNR. △ Less

Submitted 5 May, 2015; originally announced May 2015.

Effect of inhomogeneities and substrate on the dynamics of the metal-insulator transition in VO$_2$ thin films

Authors: M. Rodriguez-Vega, M. T. Simons, E. Radue, S. Kittiwatanakul, J. Lu, S. A. Wolf, R. A. Lukaszew, I. Novikova, E. Rossi

Abstract: We study the thermal relaxation dynamics of VO$_2$ films after the ultrafast photo-induced metal-insulator transition for two VO$_2$ film samples grown on Al$_2$O$_3$ and TiO$_2$ substrates. We find two orders of magnitude difference in the recovery time (a few ns for the VO$_2$/Al$_2$O$_3$ sample vs. hundreds of ns for the VO$_2$/TiO$_2$ sample). We present a theoretical model that accurately des… ▽ More We study the thermal relaxation dynamics of VO$_2$ films after the ultrafast photo-induced metal-insulator transition for two VO$_2$ film samples grown on Al$_2$O$_3$ and TiO$_2$ substrates. We find two orders of magnitude difference in the recovery time (a few ns for the VO$_2$/Al$_2$O$_3$ sample vs. hundreds of ns for the VO$_2$/TiO$_2$ sample). We present a theoretical model that accurately describes the MIT thermal properties and interpret the experimental measurements. We obtain quantitative results that show how the microstructure of the VO$_2$ film and the thermal conductivity of the interface between the VO$_2$ film and the substrate affect long time-scale recovery dynamics. We also obtain a simple analytic relationship between the recovery time-scale and some of the film parameters. △ Less

Submitted 12 September, 2015; v1 submitted 22 April, 2015; originally announced April 2015.

Comments: 10 pages, 15 figures

Journal ref: Phys. Rev. B 92, 115420 (2015)

Microstructural Effects of Chemical Island Templating in Patterned Matrix-Pillar Oxide Nanocomposites

Authors: Ryan B. Comes, Kerry Siebein, Jiwei Lu, Stuart A. Wolf

Abstract: The ability to pattern the location of pillars in epitaxial matrix-pillar nanocomposites is a key challenge to develop future technologies using these intriguing materials. One such model system employs a ferrimagnetic CoFe$_{2}$O$_{4}$ (CFO) pillar embedded in a ferroelectric BiFeO$_{3}$ (BFO) matrix, which has been proposed as a possible memory or logic system. These composites self-assemble spo… ▽ More The ability to pattern the location of pillars in epitaxial matrix-pillar nanocomposites is a key challenge to develop future technologies using these intriguing materials. One such model system employs a ferrimagnetic CoFe$_{2}$O$_{4}$ (CFO) pillar embedded in a ferroelectric BiFeO$_{3}$ (BFO) matrix, which has been proposed as a possible memory or logic system. These composites self-assemble spontaneously with pillars forming through nucleation at a random location when grown via physical vapor deposition. Recent results have shown that if an island of the pillar material is pre-patterned on the substrate, it is possible to control the nucleation process and determine the locations where pillars form. In this work, we employ electron microscopy and x-ray diffraction to examine the chemical composition and microstructure of patterned CFO-BFO nanocomposites. Cross-sectional transmission electron microscopy is used to examine the nucleation effects at the interface between the template island and resulting pillar.Evidence of grain boundaries and lattice tilting in the templated pillars is also presented and attributed to the microstructure of the seed island. △ Less

Submitted 25 October, 2015; v1 submitted 5 January, 2015; originally announced January 2015.

Comments: 9 pages, 8 figures; 5 pages supplement, 5 figures

Journal ref: CrystEngComm, 17, 2041-2049 (2015)

Direct Observation of Decoupled Structural and Electronic Transitions and an Ambient Pressure Monoclinic-Like Metallic Phase of VO$_2$

Authors: J. Laverock, S. Kittiwatanakul, A. A. Zakharov, Y. R. Niu, B. Chen, S. A. Wolf, J. W. Lu, K. E. Smith

Abstract: We report the simultaneous measurement of the structural and electronic components of the metal-insulator transition of VO$_2$ using electron and photoelectron spectroscopies and microscopies. We show that these evolve over different temperature scales, and are separated by an unusual monoclinic-like metallic phase. Our results provide conclusive evidence that the new monoclinic-like metallic phas… ▽ More We report the simultaneous measurement of the structural and electronic components of the metal-insulator transition of VO$_2$ using electron and photoelectron spectroscopies and microscopies. We show that these evolve over different temperature scales, and are separated by an unusual monoclinic-like metallic phase. Our results provide conclusive evidence that the new monoclinic-like metallic phase, recently identified in high-pressure and nonequilibrium measurements, is accessible in the thermodynamic transition at ambient pressure, and we discuss the implications of these observations on the nature of the MIT in VO$_2$. △ Less

Submitted 17 November, 2014; originally announced November 2014.

Journal ref: Phys. Rev. Lett. 113, 216402 (2014)

Substrate-induced microstructure effects on the dynamics of the photo-induced Metal-insulator transition in VO$_2$ thin films

Authors: E. Radue, L. Wang, S. Kittiwatanakul, J. Lu, S. A. Wolf, E. Rossi, R. A. Lukaszew, I. Novikova

Abstract: We investigate the differences in the dynamics of the ultrafast photo-induced metal-insulator transition (MIT) of two VO$_2$ thin films deposited on different substrates, TiO$_2$ and Al$_2$O$_3$, and in particular the temperature dependence of the threshold laser fluence values required to induce various MIT stages in a wide range of sample temperatures (150 K - 320 K). We identified that, althoug… ▽ More We investigate the differences in the dynamics of the ultrafast photo-induced metal-insulator transition (MIT) of two VO$_2$ thin films deposited on different substrates, TiO$_2$ and Al$_2$O$_3$, and in particular the temperature dependence of the threshold laser fluence values required to induce various MIT stages in a wide range of sample temperatures (150 K - 320 K). We identified that, although the general pattern of MIT evolution was similar for the two samples, there were several differences. Most notably, the threshold values of laser fluence required to reach the transition to a fully metallic phase in the VO$_2$ film on the TiO$_2$ substrate were nearly constant in the range of temperatures considered, whereas the VO$_2$/Al$_2$O$_3$ sample showed clear temperature dependence. Our analysis qualitatively connects such behavior to the structural differences in the two VO$_2$ films. △ Less

Submitted 16 January, 2015; v1 submitted 23 October, 2014; originally announced October 2014.

Comments: Changed formatting of figures, fixed some citations: Consistent with published version

Journal ref: J. Opt. 17 025503 (2015)

Large epitaxial bi-axial strain induces a Mott-like phase transition in VO2

Authors: Salinporn Kittiwatanakul, Stuart A. Wolf, Jiwei Lu

Abstract: The metal insulator transition (MIT) in VO2 has been an important topic for recent years. It has been generally agreed that the mechanism of the MIT in bulk VO2 is considered to be a collaborative Mott-Peierls transition, however the effect of the strain on the phase transition is much more complicated. In this study the effect of the large strain on the properties of VO2 films was investigated. O… ▽ More The metal insulator transition (MIT) in VO2 has been an important topic for recent years. It has been generally agreed that the mechanism of the MIT in bulk VO2 is considered to be a collaborative Mott-Peierls transition, however the effect of the strain on the phase transition is much more complicated. In this study the effect of the large strain on the properties of VO2 films was investigated. One remarkable result is that highly strained epitaxial VO2 thin films were rutile in the insulating state as well as in the metallic state. These highly strained VO2 films underwent an electronic phase transition without the concomitant Peierls transition. Our results also show that a very large tensile strain along the c-axis of rutile VO2 resulted in a phase transition temperature of ~ 433 K, much higher than in any previous report. Our findings elicit that the metal insulator transition in VO2 can be driven by an electronic transition alone, rather the typical coupled electronic-structural transition. △ Less

Submitted 28 June, 2014; originally announced June 2014.

Journal ref: Appl. Phys. Lett. 105, 073112 (2014)

Structural and magnetic properties of Cr-diluted CoFeB

Authors: Yishen Cui, Manli Ding, S. Joseph Poon, T. Paul Adl, S. Keshavarz, Tim Mewes, Stuart A. Wolf, Jiwei Lu

Abstract: The crystallization process and the magnetization of Cr diluted CoFeB was investigated in both ribbon samples and thin film samples with Cr content up to 30 at. %. A primary crystallization of bcc phase from an amorphous precursor in ribbon samples was observed when the annealing temperature rose to between 421 oC and 456 oC, followed by boron segregation at temperatures between 518 oC and 573 oC.… ▽ More The crystallization process and the magnetization of Cr diluted CoFeB was investigated in both ribbon samples and thin film samples with Cr content up to 30 at. %. A primary crystallization of bcc phase from an amorphous precursor in ribbon samples was observed when the annealing temperature rose to between 421 oC and 456 oC, followed by boron segregation at temperatures between 518 oC and 573 oC. The two onset crystallization temperatures showed strong dependences on both Cr and B concentrations. The impact of Cr concentration on the magnetic properties including a reduced saturation magnetization and an enhanced coercive field was also observed. The magnetizations of both ribbon samples and thin film samples were well fitted using the generalized Slater-Pauling curve with modified moments for B (-0.94 μB) and Cr (-3.6 μB). Possible origins of the enhanced coercive field were also discussed. We also achieved a dam** parameter in CoFeCrB thin films at the same level as Co40Fe40B20, much lower than the value reported for CoFeCrB films previously. The results suggest a possible advantage of CoFeCrB in reducing the critical switching current density in Spin Transfer Torque Random Access Memory (STT-RAM). △ Less

Submitted 27 September, 2013; originally announced September 2013.

Comments: 10 pages, 5 figures, 2 tables. To be published in Journal of Applied Physics

Metal-insulator transition induced in SrTi_{1-x}V_xO_3 thin films

Authors: Man Gu, Stuart A. Wolf, Jiwei Lu

Abstract: Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for the film with x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic, and the electrical resistivity followed the T^2 law… ▽ More Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for the film with x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic, and the electrical resistivity followed the T^2 law corresponding to a Fermi liquid system. In the insulating region of x < 0.67, the temperature dependence of electrical resistivity for the x = 0.5 and 0.33 films can be scaled with the variable range hop** model. The possible mechanisms behind the observed MIT were discussed, including the effects of electron correlation, lattice distortion and Anderson localization. △ Less

Submitted 6 September, 2013; originally announced September 2013.

Resonant soft x-ray emission as a bulk probe of correlated electron behavior in metallic Sr$_x$Ca$_{1-x}$VO$_3$

Authors: J. Laverock, B. Chen, K. E. Smith, R. P. Singh, G. Balakrishnan, M. Gu, J. W. Lu, S. A. Wolf, R. M. Qiao, W. Yang, J. Adell

Abstract: The evolution of electron correlation in Sr$_{x}$Ca$_{1-x}$VO$_3$ has been studied using a combination of bulk-sensitive resonant soft x-ray emission spectroscopy (RXES), surface-sensitive photoemission spectroscopy (PES), and ab initio band structure calculations. We show that the effect of electron correlation is enhanced at the surface. Strong incoherent Hubbard subbands are found to lie ~ 20%… ▽ More The evolution of electron correlation in Sr$_{x}$Ca$_{1-x}$VO$_3$ has been studied using a combination of bulk-sensitive resonant soft x-ray emission spectroscopy (RXES), surface-sensitive photoemission spectroscopy (PES), and ab initio band structure calculations. We show that the effect of electron correlation is enhanced at the surface. Strong incoherent Hubbard subbands are found to lie ~ 20% closer in energy to the coherent quasiparticle features in surface-sensitive PES measurements compared with those from bulk-sensitive RXES, and a ~ 10% narrowing of the overall bandwidth at the surface is also observed. △ Less

Submitted 24 July, 2013; originally announced July 2013.

Journal ref: Phys. Rev. Lett. 111, 047402 (2013)

Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure

Authors: Salinporn Kittiwatanakul, Jude Laverock, Dave Newby Jr., Kevin E. Smith, Stuart A. Wolf, Jiwei Lu

Abstract: We grew highly textured phase pure VO2 thin films on c-plane Al2O3 substrates with different oxygen partial pressure. X-ray absorption and photoemission spectroscopy confirm the identical valence state of vanadium ions despite the different oxygen pressure during the deposition. As the O2 flow rate increases, the [010] lattice parameter for monoclinic VO2 was reduced and coincidently distinctive c… ▽ More We grew highly textured phase pure VO2 thin films on c-plane Al2O3 substrates with different oxygen partial pressure. X-ray absorption and photoemission spectroscopy confirm the identical valence state of vanadium ions despite the different oxygen pressure during the deposition. As the O2 flow rate increases, the [010] lattice parameter for monoclinic VO2 was reduced and coincidently distinctive changes in the metal- semiconductor transition (MST) and transport behaviors were observed despite the identical valence state of vanadium in these samples. We discuss the effect of the oxygen partial pressure on the monoclinic structure and electronic structure of VO2, and consequently the MST. △ Less

Submitted 22 July, 2013; originally announced July 2013.

Comments: 16 pages, 3 figures, 1 table

Journal ref: J. Appl. Phys. 114, 053703 (2013)

Dimensional-Crossover-Driven Mott Insulators in SrVO3 Ultrathin Films

Authors: Man Gu, Stuart A. Wolf, Jiwei Lu

Abstract: High-quality epitaxial SrVO3 (SVO) thin films of various thicknesses were grown on (001)-oriented LSAT substrates by pulsed electron-beam deposition technique. Thick SVO films (~25 nm) exhibited metallic behavior with the electrical resistivity following the T2 law corresponding to a Fermi liquid system. We observed a temperature driven metal-insulator transition (MIT) in SVO ultrathin films with… ▽ More High-quality epitaxial SrVO3 (SVO) thin films of various thicknesses were grown on (001)-oriented LSAT substrates by pulsed electron-beam deposition technique. Thick SVO films (~25 nm) exhibited metallic behavior with the electrical resistivity following the T2 law corresponding to a Fermi liquid system. We observed a temperature driven metal-insulator transition (MIT) in SVO ultrathin films with thicknesses below 6.5 nm, the transition temperature TMIT was found to be at 50 K for the 6.5 nm film, 120 K for the 5.7 nm film and 205 K for the 3 nm film. The emergence of the observed MIT can be attributed to the dimensional crossover from a three-dimensional metal to a two-dimensional Mott insulator, as the resulting reduction in the effective bandwidth W opens a band gap at the Fermi level. The magneto-transport study of the SVO ultrathin films also confirmed the observed MIT is due to the electron-electron interactions other than localization. △ Less

Submitted 23 July, 2013; v1 submitted 22 July, 2013; originally announced July 2013.

Strain-induced enhancement of coercivity in amorphous TbFeCo films

Authors: Nattawut Anuniwat, Manli Ding, S. J. Poon, S. A. Wolf, Jiwei Lu

Abstract: We report a strong size dependence of coercivity in amorphous ferrimagnetic TbFeCo films. The as-deposited film exhibited a low saturation magnetization (Ms=100 emu/cc) and a high perpendicular anisotropy (Ku=10^6 erg/cc). Hall-bar devices were fabricated for characterizing the magneto-transport behaviors. A significant increase in coercivity (up to 300 %) was observed at room temperature as the w… ▽ More We report a strong size dependence of coercivity in amorphous ferrimagnetic TbFeCo films. The as-deposited film exhibited a low saturation magnetization (Ms=100 emu/cc) and a high perpendicular anisotropy (Ku=10^6 erg/cc). Hall-bar devices were fabricated for characterizing the magneto-transport behaviors. A significant increase in coercivity (up to 300 %) was observed at room temperature as the width of Hall bar was reduced. The large coercivity enhancement was attributed to the relaxation of film stress. The effect of strain and dimensionality on the coercivity in TbFeCo makes it attractive for tunable coercivity and the magnetization reversal in future nanoscale devices. △ Less

Submitted 28 June, 2013; originally announced July 2013.

Comments: 17 pages, 3 figures

Journal ref: J. Applied Physics 113, 043905 (2013)

Photoemission evidence for crossover from Peierls-like to Mott-like transition in highly strained VO$_2$

Authors: J. Laverock, A. R. H. Preston, D. Newby Jr, K. E. Smith, S. Sallis, L. F. J. Piper, S. Kittiwatanakul, J. W. Lu, S. A. Wolf, M. Leandersson, T. Balasubramanian

Abstract: We present a spectroscopic study that reveals that the metal-insulator transition of strained VO$_2$ thin films may be driven towards a purely electronic transition, which does not rely on the Peierls dimerization, by the application of mechanical strain. Comparison with a moderately strained system, which does involve the lattice, demonstrates the crossover from Peierls- to Mott-like transitions. We present a spectroscopic study that reveals that the metal-insulator transition of strained VO$_2$ thin films may be driven towards a purely electronic transition, which does not rely on the Peierls dimerization, by the application of mechanical strain. Comparison with a moderately strained system, which does involve the lattice, demonstrates the crossover from Peierls- to Mott-like transitions. △ Less

Submitted 16 November, 2012; originally announced November 2012.

Journal ref: Phys. Rev. B 86, 195124 (2012)

Substrate Effect on Optical Properties of Insulator-Metal Transition in VO2 Thin Films

Authors: E. Radue, E. Crisman, L. Wang, S. Kittiwatanakul, J. Lu, S. A. Wolf, R. Wincheski, R. A. Lukaszew, I. Novikova

Abstract: In this paper we used Raman spectroscopy to investigate the optical properties of vanadium dioxide (VO2) thin films during the thermally induced insulating to metallic phase transition. We observed a significant difference in transition temperature in similar VO2 films grown on quartz and sapphire substrates: the film grown on quartz displayed the phase transition at a lower temperature (Tc=50C) c… ▽ More In this paper we used Raman spectroscopy to investigate the optical properties of vanadium dioxide (VO2) thin films during the thermally induced insulating to metallic phase transition. We observed a significant difference in transition temperature in similar VO2 films grown on quartz and sapphire substrates: the film grown on quartz displayed the phase transition at a lower temperature (Tc=50C) compared a film grown on sapphire (Tc=68C). We also investigated differences in the detected Raman signal for different wavelengths and polarizations of the excitation laser. We found that for either substrate, a longer wavelength (in our case 785 nm) yielded the clearest VO2 Raman spectra, with no polarization dependence. △ Less

Submitted 10 January, 2013; v1 submitted 29 October, 2012; originally announced October 2012.

Comments: 14 pages, 6 figures

Strain dependence of bonding and hybridization across the metal-insulator transition of VO2

Authors: J. Laverock, L. F. J. Piper, A. R. H. Preston, B. Chen, J. McNulty, K. E. Smith, S. Kittiwatanakul, J. W. Lu, S. A. Wolf, P. -A. Glans, J. -H. Guo

Abstract: Soft x-ray spectroscopy is used to investigate the strain dependence of the metal-insulator transition of VO2. Changes in the strength of the V 3d - O 2p hybridization are observed across the transition, and are linked to the structural distortion. Furthermore, although the V-V dimerization is well-described by dynamical mean-field theory, the V-O hybridization is found to have an unexpectedly str… ▽ More Soft x-ray spectroscopy is used to investigate the strain dependence of the metal-insulator transition of VO2. Changes in the strength of the V 3d - O 2p hybridization are observed across the transition, and are linked to the structural distortion. Furthermore, although the V-V dimerization is well-described by dynamical mean-field theory, the V-O hybridization is found to have an unexpectedly strong dependence on strain that is not predicted by band theory, emphasizing the relevance of the O ion to the physics of VO2. △ Less

Submitted 10 February, 2012; originally announced February 2012.

Journal ref: Phys. Rev. B 85, 081104(R) (2012)

VO2 nanosheets: controlling the THz properties through strain engineering

Authors: Elsa Abreu, Mengkun Liu, Jiwei Lu, Kevin G. West, Salinporn Kittiwatanakul, Wen**g Yin, Stuart A. Wolf, Richard D. Averitt

Abstract: We investigate far-infrared properties of strain engineered vanadium dioxide nanosheets through epitaxial growth on a (100)R TiO2 substrate. The nanosheets exhibit large uniaxial strain leading to highly uniform and oriented cracks along the rutile c-axis. Dramatic anisotropy arises for both the metal-insulator transition temperature, which is different from the structural transition temperature a… ▽ More We investigate far-infrared properties of strain engineered vanadium dioxide nanosheets through epitaxial growth on a (100)R TiO2 substrate. The nanosheets exhibit large uniaxial strain leading to highly uniform and oriented cracks along the rutile c-axis. Dramatic anisotropy arises for both the metal-insulator transition temperature, which is different from the structural transition temperature along the cR axis, and the metallic state conductivity. Detailed analysis reveals a Mott-Hubbard like behavior along the rutile cR axis. △ Less

Submitted 7 December, 2011; originally announced December 2011.

Journal ref: New Journal of Physics 14, 083026 (2012)

Ordering of dopants and potential increase in Tc to near room temperature

Authors: Stuart A. Wolf, Vladimir Z. Kresin

Abstract: This paper describes a novel method to increase the resistive Tc of cuprate superconductors to values that might approach room temperature if the method is applied to the so-called underdoped regime. This involves ordering the dopants that provide the holes as well as provide pair breaking. The strategy is to separate the doped regions with lower Tc from metallic but undoped regions with the highe… ▽ More This paper describes a novel method to increase the resistive Tc of cuprate superconductors to values that might approach room temperature if the method is applied to the so-called underdoped regime. This involves ordering the dopants that provide the holes as well as provide pair breaking. The strategy is to separate the doped regions with lower Tc from metallic but undoped regions with the higher Tc. △ Less

Submitted 14 November, 2011; originally announced November 2011.

Comments: 10 pages, no figures

Inhomogeneous Superconducting State and intrinsic Tc : Near Room Temperature Superconductivity in the Cuprates

Authors: Vladimir Z. Kresin, Stuart A. Wolf

Abstract: Doped cuprates are inhomogeneous superconductors. The concept of an intrinsic critical temperature, Tcintr.$\equiv$ Tc*, whose value greatly exceeds that for the resistive Tcres.$\equiv$ Tc, is supported by a number of experimental studies, including those performed recently. These data are discussed in this review. The anomalous diamagnetism observed at Tcres.$\equiv$ <T< Tc* is a manifestation o… ▽ More Doped cuprates are inhomogeneous superconductors. The concept of an intrinsic critical temperature, Tcintr.$\equiv$ Tc*, whose value greatly exceeds that for the resistive Tcres.$\equiv$ Tc, is supported by a number of experimental studies, including those performed recently. These data are discussed in this review. The anomalous diamagnetism observed at Tcres.$\equiv$ <T< Tc* is a manifestation of the presence of superconducting clusters embedded into a normal metallic matrix. The value of intrinsic critical temperature in some cuprates reaches a value which is close to room temperature. The a.c. properties of such inhomogeneous systems are discussed. △ Less

Submitted 1 September, 2011; originally announced September 2011.

Detection of bottom ferromagnetic electrode oxidation in magnetic tunnel junctions by magnetometry measurements

Authors: Wei Chen, Dao N. H. Nam, Jiwei Lu, Stuart A. Wolf

Abstract: Surface oxidation of the bottom ferromagnetic (FM) electrode, one of the major detrimental factors to the performance of a Magnetic Tunnel Junction (MTJ), is difficult to avoid during the fabrication process of the MTJ's tunnel barrier. Since Co rich alloys are commonly used for the FM electrodes in MTJs, over-oxidation of the tunnel barrier results in the formation of a CoO antiferromagnetic (AF)… ▽ More Surface oxidation of the bottom ferromagnetic (FM) electrode, one of the major detrimental factors to the performance of a Magnetic Tunnel Junction (MTJ), is difficult to avoid during the fabrication process of the MTJ's tunnel barrier. Since Co rich alloys are commonly used for the FM electrodes in MTJs, over-oxidation of the tunnel barrier results in the formation of a CoO antiferromagnetic (AF) interface layer which couples with the bottom FM electrode to form a typical AF/FM exchange bias (EB) system. In this work, surface oxidation of the CoFe and CoFeB bottom electrodes was detected via magnetometry measurements of exchange-bias characterizations including the EB field, training effect, uncompensated spin density, and coercivity. Variations of these parameters were found to be related to the surface oxidation of the bottom electrode, among them the change of coercivity is most sensitive. Annealed samples show evidence for an oxygen migration back to the MgO tunnel barrier by annealing. △ Less

Submitted 9 August, 2010; originally announced August 2010.

Comments: 5 pages, 4 figues, submitted to J. Appl. Phys

Electron-lattice interaction and its impact on high Tc superconductivity

Authors: V. Z. Kresin, S. A. Wolf

Abstract: In this Colloquium, the main features of the electron-lattice interaction are discussed and high values of the critical temperature up to room temperature could be provided. While the issue of the mechanism of superconductivity in the high Tc cuprates continues to be controversial, one can state that there have been many experimental results demonstrating that the lattice makes a strong impact o… ▽ More In this Colloquium, the main features of the electron-lattice interaction are discussed and high values of the critical temperature up to room temperature could be provided. While the issue of the mechanism of superconductivity in the high Tc cuprates continues to be controversial, one can state that there have been many experimental results demonstrating that the lattice makes a strong impact on the pairing of electrons. The polaronic nature of the carriers is also a manifestation of strong electron-lattice interaction. One can propose an experiment that allows an unambiguous determination of the intermediate boson (phonon, magnon, exciton, etc.) which provides the pairing. The electron-lattice interaction increases for nanosystems, and this is due to an effective increase in the density of states. △ Less

Submitted 13 April, 2009; originally announced April 2009.

Journal ref: Reviews of Modern Physics 81,481(2009)

Target bias voltage effect on properties of magnetic tunnel junctions by biased target ion beam deposition

Authors: Wei Chen, Dao N. H. Nam, Jiwei Lu, Kevin G. West, Stuart A. Wolf

Abstract: Magnetic tunnel junctions (MTJ) with AlOx barrier were fabricated by a deposition tool called Biased Target Ion Beam Deposition (BTIBD) using low energy ion source (0-50 eV) and voltage biased targets. The BTIBD system applies bias voltage directly and only on the desired targets, providing enough sputtering energy and avoiding "overspill" contamination during film deposition. The successful dep… ▽ More Magnetic tunnel junctions (MTJ) with AlOx barrier were fabricated by a deposition tool called Biased Target Ion Beam Deposition (BTIBD) using low energy ion source (0-50 eV) and voltage biased targets. The BTIBD system applies bias voltage directly and only on the desired targets, providing enough sputtering energy and avoiding "overspill" contamination during film deposition. The successful deposition of AlOx-MTJs demonstrated the capability of BTIBD to make multilayer structures with good film quality. MTJ thin film surface roughness and intermixing between layers are among the key problems leading to low TMR performance. Here by studying the bias voltage effect on MTJ properties via the measurement of Neel coupling field and TMR, we suggest that the lower bias voltage reduces the intermixing that occurs when top CoFe free layer is deposited on AlOx barrier, but produces relatively high surface roughness. On the other hand, higher energy deposition enhances both interlayer mixing and surface flattening. Such understanding of bias voltage effects on film properties could be used to optimize the MTJ performances. △ Less

Submitted 17 January, 2009; originally announced January 2009.

Propagation of Exchange Bias in CoFe/FeMn/CoFe Trilayers

Authors: D. N. H. Nam, W. Chen, K. G. West, D. M. Kirkwood, J. Lu, S. A. Wolf

Abstract: CoFe/FeMn, FeMn/CoFe bilayers and CoFe/FeMn/CoFe trilayers were grown in magnetic field and at room temperature. The exchange bias field $H_{eb}$ depends strongly on the order of depositions and is much higher at CoFe/FeMn than at FeMn/CoFe interfaces. By combining the two bilayer structures into symmetric CoFe/FeMn($t_\mathrm{FeMn}$)/CoFe trilayers, $H_{eb}^t$ and $H_{eb}^b$ of the top and bott… ▽ More CoFe/FeMn, FeMn/CoFe bilayers and CoFe/FeMn/CoFe trilayers were grown in magnetic field and at room temperature. The exchange bias field $H_{eb}$ depends strongly on the order of depositions and is much higher at CoFe/FeMn than at FeMn/CoFe interfaces. By combining the two bilayer structures into symmetric CoFe/FeMn($t_\mathrm{FeMn}$)/CoFe trilayers, $H_{eb}^t$ and $H_{eb}^b$ of the top and bottom CoFe layers, respectively, are both enhanced. Reducing $t_\mathrm{FeMn}$ of the trilayers also results in enhancements of both $H_{eb}^b$ and $H_{eb}^t$. These results evidence the propagation of exchange bias between the two CoFe/FeMn and FeMn/CoFe interfaces mediated by the FeMn antiferromagnetic order. △ Less

Submitted 13 September, 2008; originally announced September 2008.

Impact of in-plane currents on magnetoresistance properties of an exchange-biased spin-valve with insulating antiferromagnetic layer

Authors: D. N. H. Nam, N. C. Thuan, L. V. Hong, N. X. Phuc, S. A. Wolf, N. V. Dai, Y. P. Lee

Abstract: The impact of in-plane alternating currents on the exchange bias, resistance, and magnetoresistance of a CoFe/NiCoO/CoFe/Cu/CoFe spin-valve is studied. With increasing current, the resistance is increased while the maximum magnetoresistance ratio decreases. Noticeably, the reversal of the pinned layer is systematically suppressed in both field swee** directions. Since the NiCoO oxide is a good… ▽ More The impact of in-plane alternating currents on the exchange bias, resistance, and magnetoresistance of a CoFe/NiCoO/CoFe/Cu/CoFe spin-valve is studied. With increasing current, the resistance is increased while the maximum magnetoresistance ratio decreases. Noticeably, the reversal of the pinned layer is systematically suppressed in both field swee** directions. Since the NiCoO oxide is a good insulator, it is expected that the ac current flows only in the CoFe/Cu/CoFe top layers, thus ruling out any presence of spin-transfer torque acting on the spins in the antiferromagnetic layer. Instead, our measurements show clear evidences for the influence of Joule heating caused by the current. Moreover, results from temperature-dependent measurements very much resemble those of the current dependence, indicating that the effect of Joule heating plays a major role in the current-in-plane spin-valve configurations. The results also suggest that spin-transfer torques between ferromagnetic layers might still exist and compete with the exchange bias at sufficiently high currents. △ Less

Submitted 9 January, 2008; originally announced January 2008.

Inhomogeneous superconductivity and the "pseudogap state of novel superconductors

Authors: Vladimir Kresin, Yurii N. Ovchinikov, Stuart A. Wolf

Abstract: Novel superconducting compounds such as the high Tc oxides are intrinsically inhomogeneous systems. An inhomogeneous structure is created by do** and the statistical nature of the distribution of dopants. Consequently, the critical temperature is spatially dependent: Tc = Tc (r). Novel superconducting compounds such as the high Tc oxides are intrinsically inhomogeneous systems. An inhomogeneous structure is created by do** and the statistical nature of the distribution of dopants. Consequently, the critical temperature is spatially dependent: Tc = Tc (r). △ Less

Submitted 11 September, 2006; originally announced September 2006.

Comments: 63 pages text, 13 figures and 1 table

Journal ref: Phys. Rep., 431,231 (2006)

The Isotope Effect in Superconductors

Authors: A. Bill, V. Z. Kresin, S. A. Wolf

Abstract: We review some aspects of the isotope effect (IE) in superconductors. Our focus is on the influence of factors not related to the pairing mechanism. After summarizing the main results obtained for conventional superconductors, we review the effect of magnetic impurities, the proximity effect and non-adiabaticity on the value of the isotope coefficient (IC). We discuss the isotope effect of… ▽ More We review some aspects of the isotope effect (IE) in superconductors. Our focus is on the influence of factors not related to the pairing mechanism. After summarizing the main results obtained for conventional superconductors, we review the effect of magnetic impurities, the proximity effect and non-adiabaticity on the value of the isotope coefficient (IC). We discuss the isotope effect of $T_c$ and of the penetration depth $δ$. The theory is applied to conventional and high-$T_c$ superconductors. Experimental results obtained for YBa$_2$Cu$_3$O$_{7-δ}$ related materials (Zn and Pr-substituted as well as oxygen-depleted systems) and for La$_{2-x}$Sr$_x$CuO$_4$ are discussed. △ Less

Submitted 21 January, 1998; originally announced January 1998.

Comments: 31 pages, 10 figures. Review article to appear in "Pair Correlation in Many Fermions Systems", Plenum Press 1998

Journal ref: In: Pair Correlations in Many-Fermion Systems. p.25-55 (Springer, Boston, MA, Plenum Press, 1998)

Effect of Magnetic Impurity Correlations on Josephson Tunneling

Authors: A. Bill, S. A. Wolf, Yu. N. Ovchinnikov, V. Z. Kresin

Abstract: The ordering trend of magnetic impurities at low temperature results in the frustration of the pair-breaking effect and induces a ``recovery'' of superconducting properties. We show that this effect manifests itself in the deviation of the Josephson current amplitude from the values obtained within the Ambegaokar-Baratoff and the Abrikosov-Gor'kov models. We consider both weak and strong-couplin… ▽ More The ordering trend of magnetic impurities at low temperature results in the frustration of the pair-breaking effect and induces a ``recovery'' of superconducting properties. We show that this effect manifests itself in the deviation of the Josephson current amplitude from the values obtained within the Ambegaokar-Baratoff and the Abrikosov-Gor'kov models. We consider both weak and strong-coupling cases. The theory is applied to describe the experimental data obtained for the low-$T_c$ superconductor SmRh$_4$B$_4$. We further predict a ``recovery'' effect of the Josephson current in high-temperature superconductors. △ Less

Submitted 19 January, 1998; originally announced January 1998.

Comments: 7 pages, 4 figures. Accepted for publication in Physica C

Journal ref: Physica C 298, 231 (1998)

Isotope Effect for the Penetration Depth in Superconductors

Authors: A. Bill, V. Z. Kresin, S. A. Wolf

Abstract: We show that various factors can lead to an isotopic dependence of the penetration depth $δ$. Non-adiabaticity (Jahn-Teller crossing) leads to the isotope effect of the charge carrier concentration $n$ and, consequently, of $δ$ in doped superconductors such as the cuprates. A general equation relating the isotope coefficients of $T_c$ and of $δ$ is presented for London superconductors. We furthe… ▽ More We show that various factors can lead to an isotopic dependence of the penetration depth $δ$. Non-adiabaticity (Jahn-Teller crossing) leads to the isotope effect of the charge carrier concentration $n$ and, consequently, of $δ$ in doped superconductors such as the cuprates. A general equation relating the isotope coefficients of $T_c$ and of $δ$ is presented for London superconductors. We further show that the presence of magnetic impurities or a proximity contact also lead to an isotopic dependence of $δ$; the isotope coefficient turns out to be temperature dependent, $β(T)$, in these cases. The existence of the isotope effect for the penetration depth is predicted for conventional as well as for high-temperature superconductors. Various experiments are proposed and/or discussed. △ Less

Submitted 19 January, 1998; originally announced January 1998.

Comments: 11 pages, 8 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 57, 10814 (1998)