Showing 1–50 of 64 results for author: Wirtz, L

Intervalence Plasmons in Boron-Doped Diamond

Authors: Souvik Bhattacharya, Jonathan Boyd, Sven Reichardt, Amir Hossein Talebi, Nicolò Maccaferri, Olga Shenderova, Ludger Wirtz, Giuseppe Strangi, R. Mohan Sankaran

Abstract: Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron do** on the electronic band structure of diamond are well-studied, any link between charge carriers a… ▽ More Doped semiconductors are capable of exhibiting metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron do** on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons, which could facilitate optical applications, has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low energy excitations is provided by scanning transmission electron microscope-valence electron energy loss spectroscopy and photoinduced force infrared spectroscopy. The measured loss and absorbance spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Remarkably, the calculations also reveal that the real part of the dielectric function exhibits a resonance characteristic of metallicity (narrow-banded negative values of the dielectric function). The energy of the zero-crossing and the position of the loss peak are found to coincide, and both increase with the carrier density. Our results provide insight into a new mechanism for inducing plasmon-like behavior in doped semiconductors from intervalence band transitions, and the possibility of attaining such properties in diamond, a key emerging material for biomedical and quantum information technologies. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Symmetry-dependent dielectric screening of optical phonons in monolayer graphene

Authors: Loïc Moczko, Sven Reichardt, Aditya Singh, Xin Zhang, Luis E. Parra López, Joanna L. P. Wolff, Aditi Raman Moghe, Etienne Lorchat, Rajendra Singh, Kenji Watanabe, Takashi Taniguchi, Hicham Majjad, Michelangelo Romeo, Arnaud Gloppe, Ludger Wirtz, Stéphane Berciaud

Abstract: Quantised lattice vibrations (i.e., phonons) in solids are robust and unambiguous fingerprints of crystal structures and of their symmetry properties. In metals and semimetals, strong electron-phonon coupling may lead to so-called Kohn anomalies in the phonon dispersion, providing an image of the Fermi surface in a non-electronic observable. Kohn anomalies become prominent in low-dimensional syste… ▽ More Quantised lattice vibrations (i.e., phonons) in solids are robust and unambiguous fingerprints of crystal structures and of their symmetry properties. In metals and semimetals, strong electron-phonon coupling may lead to so-called Kohn anomalies in the phonon dispersion, providing an image of the Fermi surface in a non-electronic observable. Kohn anomalies become prominent in low-dimensional systems, in particular in graphene, where they appear as sharp kinks in the in-plane optical phonon branches. However, in spite of intense research efforts on electron-phonon coupling in graphene and related van der Waals heterostructures, little is known regarding the links between the symmetry properties of optical phonons at and near Kohn anomalies and their sensitivity towards the local environment. Here, using inelastic light scattering (Raman) spectroscopy, we investigate a set of custom-designed graphene-based van der Waals heterostructures, wherein dielectric screening is finely controlled at the atomic layer level. We demonstrate experimentally and explain theoretically that, depending exclusively on their symmetry properties, the two main Raman modes of graphene react differently to the surrounding environment. While the Raman-active near-zone-edge optical phonons in graphene undergo changes in their frequencies due to the neighboring dielectric environment, the in-plane, zone-centre optical phonons are symmetry-protected from the influence of the latter. These results shed new light on the unique electron-phonon coupling properties in graphene and related systems and provide invaluable guidelines to characterise dielectric screening in van der Waals heterostructures and moiré superlattices. △ Less

Submitted 20 October, 2023; originally announced October 2023.

Comments: 22 pages, main manuscript with 3 figures, appendix with 5 figures, supplemental material with 6 figures

Two-Dimensional Noble Metal Chalcogenides in the Frustrated Snub-Square Lattice

Authors: Hai-Chen Wang, Ahmad W. Huran, Miguel A. L. Marques, Muralidhar Nalabothula, Ludger Wirtz, Zachary Romestan, Aldo H. Romero

Abstract: We study two-dimensional noble metal chalcogenides, with composition {Cu, Ag, Au}2{S, Se, Te}, crystallizing in a snub-square lattice. This is a semi-regular two-dimensional tesselation formed by triangles and squares that exhibits geometrical frustration. We use for comparison a square lattice, from which the snub-square tiling can be derived by a simple rotation of the squares. The mono-layer sn… ▽ More We study two-dimensional noble metal chalcogenides, with composition {Cu, Ag, Au}2{S, Se, Te}, crystallizing in a snub-square lattice. This is a semi-regular two-dimensional tesselation formed by triangles and squares that exhibits geometrical frustration. We use for comparison a square lattice, from which the snub-square tiling can be derived by a simple rotation of the squares. The mono-layer snub-square chalcogenides are very close to thermodynamic stability, with the most stable system (Ag2Se) a mere 7 meV/atom above the convex hull of stability. All compounds studied in the square and snub-square lattice are semiconductors, with band gaps ranging from 0.1 to more than 2.5 eV. Excitonic effects are strong, with an exciton binding energy of around 0.3 eV. We propose the Cu (001) surface as a possible substrate to synthesize Cu2Se, although many other metal and semiconducting surfaces can be found with very good lattice matching. △ Less

Submitted 18 October, 2023; originally announced October 2023.

Distinguishing different stackings in layered materials via luminescence spectroscopy

Authors: Matteo Zanfrognini, Alexandre Plaud, Ingrid Stenger, Frédéric Fossard, Lorenzo Sponza, Léonard Schué, Fulvio Paleari, Elisa Molinari, Daniele Varsano, Ludger Wirtz, François Ducastelle, Annick Loiseau, Julien Barjon

Abstract: Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal and rhombohedral bulk boron nitride crystals. Emission spectra of high-quality samples are measured via cathodoluminescence spectroscopy, displaying characterist… ▽ More Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal and rhombohedral bulk boron nitride crystals. Emission spectra of high-quality samples are measured via cathodoluminescence spectroscopy, displaying characteristic differences between the two polytypes. These differences are explained using a fully first-principles computational technique that takes into account radiative emission from ``indirect'', finite-momentum, excitons via coupling to finite-momentum phonons. We show that the differences in peak positions, number of peaks and relative intensities can be qualitatively and quantitatively explained, once a full integration over all relevant momenta of excitons and phonons is performed. △ Less

Submitted 27 May, 2023; originally announced May 2023.

Comments: Main: 6 pages and 4 figures, Supplementary: 6 pages and 7 figures

Assessing the potential of perfect screw dislocations in SiC for solid-state quantum technologies

Authors: Daniel Barragan-Yani, Ludger Wirtz

Abstract: Although point defects in solids are one of the most promising physical systems to build functioning qubits, it remains challenging to position them in a deterministic array and to integrate them into large networks. By means of advanced ab initio calculations we show that undissociated screw dislocations in cubic 3C-SiC, and their associated strain fields, could be used to create a deterministic… ▽ More Although point defects in solids are one of the most promising physical systems to build functioning qubits, it remains challenging to position them in a deterministic array and to integrate them into large networks. By means of advanced ab initio calculations we show that undissociated screw dislocations in cubic 3C-SiC, and their associated strain fields, could be used to create a deterministic pattern of relevant point defects. Specifically, we present a detailed analysis of the formation energies and electronic structure of the divacancy in 3C-SiC when located in the vicinity of this type of dislocations. Our results show that the divacancy is strongly attracted towards specific and equivalent sites inside the core of the screw dislocations, and would form a one-dimensional arrays along them. Furthermore, we show that the same strain that attracts the divacancy allows the modulation of the position of its electronic states and of its charge transition levels. In the case of the neutral divacancy, we find that these modulations result in the loss of its potential as a qubit. However, these same modulations could transform defects with no potential as qubits when located in bulk, into promising defects when located inside the core of the screw dislocations. Since dislocations are still mostly perceived as harmful defects, our findings represent a technological leap as they show that dislocations can be used as active building blocks in future defect-based quantum computers. △ Less

Submitted 26 April, 2023; originally announced April 2023.

Control of Raman scattering quantum interference pathways in graphene

Authors: Xue Chen, Sven Reichardt, Miao-Ling Lin, Yu-Chen Leng, Yan Lu, Heng Wu, Rui Mei, Ludger Wirtz, Xin Zhang, Andrea C. Ferrari, **-Heng Tan

Abstract: Graphene is an ideal platform to study the coherence of quantum interference pathways by tuning do** or laser excitation energy. The latter produces a Raman excitation profile that provides direct insight into the lifetimes of intermediate electronic excitations and, therefore, on quantum interference, which has so far remained elusive. Here, we control the Raman scattering pathways by tuning th… ▽ More Graphene is an ideal platform to study the coherence of quantum interference pathways by tuning do** or laser excitation energy. The latter produces a Raman excitation profile that provides direct insight into the lifetimes of intermediate electronic excitations and, therefore, on quantum interference, which has so far remained elusive. Here, we control the Raman scattering pathways by tuning the laser excitation energy in graphene doped up to 1.05eV, above what achievable with electrostatic do**. The Raman excitation profile of the G mode indicates its position and full width at half maximum are linearly dependent on do**. Do**-enhanced electron-electron interactions dominate the lifetime of Raman scattering pathways, and reduce Raman interference. This paves the way for engineering quantum pathways in doped graphene, nanotubes and topological insulators. △ Less

Submitted 23 January, 2023; originally announced January 2023.

Comments: 18 pages, 4 figures

Intrinsic control of interlayer exciton generation rate in van der Waals materials via Janus layers

Authors: Engin Torun, Fulvio Paleari, Milorad V. Milosevic, Ludger Wirtz, Cem Sevik

Abstract: We demonstrate the possibility of engineering the optical properties of transition metal dichalcogenide heterobilayers when one of the constitutive layers has a Janus structure. This has important consequences for the charge separation efficiency. We investigate different MoS$_2$@Janus layer combinations using first-principles methods including electron-hole interactions (excitons) and exciton-pho… ▽ More We demonstrate the possibility of engineering the optical properties of transition metal dichalcogenide heterobilayers when one of the constitutive layers has a Janus structure. This has important consequences for the charge separation efficiency. We investigate different MoS$_2$@Janus layer combinations using first-principles methods including electron-hole interactions (excitons) and exciton-phonon coupling. The direction of the intrinsic electric field from the Janus layer modifies the electronic band alignments and, consequently, the energy separation between interlayer exciton states -- which usually have a very low oscillator strength and hence are almost dark in absorption -- and bright in-plane excitons. We find that in-plane lattice vibrations strongly couple the two states, so that exciton-phonon scattering may be a viable generation mechanism for interlayer excitons upon light absorption. In particular, in the case of MoS$_2$@WSSe, the energy separation of the low-lying interlayer exciton from the in-plane exciton is resonant with the transverse optical phonon modes (40 meV). We thus identify this heterobilayer as a prime candidate for efficient electron-hole pair generation with efficient charge carrier separation. △ Less

Submitted 11 December, 2022; originally announced December 2022.

Symmetry-based computational search for novel binary and ternary 2D materials

Authors: Hai-Chen Wang, Jonathan Schmidt, Miguel A. L. Marques, Ludger Wirtz, Aldo H. Romero

Abstract: We present a symmetry-based exhaustive approach to explore the structural and compositional richness of two-dimensional materials. We use a ``combinatorial engine'' that constructs potential compounds by occupying all possible Wyckoff positions for a certain space group with combinations of chemical elements. These combinations are restricted by imposing charge neutrality and the Pauling test for… ▽ More We present a symmetry-based exhaustive approach to explore the structural and compositional richness of two-dimensional materials. We use a ``combinatorial engine'' that constructs potential compounds by occupying all possible Wyckoff positions for a certain space group with combinations of chemical elements. These combinations are restricted by imposing charge neutrality and the Pauling test for electronegativities. The structures are then pre-optimized with a specially crafted universal neural-network force-field, before a final step of geometry optimization using density-functional theory is performed. In this way we unveil an unprecedented variety of two-dimensional materials, covering the whole periodic table in more than 30 different stoichiometries of form A$_n$B$_m$ or A$_n$B$_m$C$_k$. Among the found structures we find examples that can be built by decorating nearly all Platonic and Archimedean tesselations as well as their dual Laves or Catalan tilings. We also obtain a rich, and unexpected, polymorphism for some specific compounds. We further accelerate the exploration of the chemical space of two-dimensional materials by employing machine-learning-accelerated prototype search, based on the structural types discovered in the exhaustive search. In total, we obtain around 6500 compounds, not present in previous available databases of 2D materials, with an energy of less than 250~meV/atom above the convex hull of thermodynamic stability. △ Less

Submitted 22 April, 2023; v1 submitted 7 December, 2022; originally announced December 2022.

Native defects in monolayer GaS and GaSe: electrical properties and thermodynamic stability

Authors: Daniel Barragan-Yani, Jonathan M. Polfus, Ludger Wirtz

Abstract: Structural, electronic and thermodynamic properties of native defects in GaS and GaSe monolayers are investigated by means of accurate ab-initio calculations. Based on their charge transition levels we assess the influence of the studied defects on the electrical properties of the monolayers. Specifically, we show that native defects do not behave as shallow dopants and their presence cannot accou… ▽ More Structural, electronic and thermodynamic properties of native defects in GaS and GaSe monolayers are investigated by means of accurate ab-initio calculations. Based on their charge transition levels we assess the influence of the studied defects on the electrical properties of the monolayers. Specifically, we show that native defects do not behave as shallow dopants and their presence cannot account for the experimentally observed intrinsic do**. In addition, we predict that native defects are efficient compensation and recombination centers. Besides pointing out their detrimental nature, we also calculate the corresponding finite temperature formation energies and provide a window of growth conditions able to reduce the concentration of all relevant native defects. △ Less

Submitted 19 October, 2021; originally announced October 2021.

Comments: 14 pages, 8 figures

Raman imaging of twist angle variations in twisted bilayer graphene at intermediate angles

Authors: A. Schäpers, J. Sonntag, L. Valerius, B. Pestka, J. Strasdas, K. Watanabe, T. Taniguchi, L. Wirtz, M. Morgenstern, B. Beschoten, R. J. Dolleman, C. Stampfer

Abstract: Van der Waals layered materials with well-defined twist angles between the crystal lattices of individual layers have attracted increasing attention due to the emergence of unexpected material properties. As many properties critically depend on the exact twist angle and its spatial homogeneity, there is a need for a fast and non-invasive characterization technique of the local twist angle, to be a… ▽ More Van der Waals layered materials with well-defined twist angles between the crystal lattices of individual layers have attracted increasing attention due to the emergence of unexpected material properties. As many properties critically depend on the exact twist angle and its spatial homogeneity, there is a need for a fast and non-invasive characterization technique of the local twist angle, to be applied preferably right after stacking. We demonstrate that confocal Raman spectroscopy can be utilized to spatially map the twist angle in stacked bilayer graphene for angles between 6.5° and 8° when using a green excitation laser. The twist angles can directly be extracted from the moiré superlattice-activated Raman scattering process of the transverse acoustic (TA) phonon mode. Furthermore, we show that the width of the TA Raman peak contains valuable information on spatial twist angle variations on length scales below the laser spot size of ~ 500 nm. △ Less

Submitted 12 June, 2022; v1 submitted 13 April, 2021; originally announced April 2021.

Comments: 14 pages, 10 figures

Journal ref: 2D Materials 9, 045009 (2022)

Time-dependent screening explains the ultrafast excitonic signal rise in 2D semiconductors

Authors: Valerie Smejkal, Florian Libisch, Alejandro Molina-Sanchez, Ludger Wirtz, Andrea Marini

Abstract: We calculate the time evolution of the transient reflection signal in an MoS$_2$ monolayer on a SiO$_2$/Si substrate using first-principles out-of-equilibrium real-time methods. Our simulations provide a simple and intuitive physical picture for the delayed, yet ultrafast, evolution of the signal whose rise time depends on the excess energy of the pump laser: at laser energies above the A- and B-e… ▽ More We calculate the time evolution of the transient reflection signal in an MoS$_2$ monolayer on a SiO$_2$/Si substrate using first-principles out-of-equilibrium real-time methods. Our simulations provide a simple and intuitive physical picture for the delayed, yet ultrafast, evolution of the signal whose rise time depends on the excess energy of the pump laser: at laser energies above the A- and B-exciton, the pump pulse excites electrons and holes far away from the K valleys in the first Brillouin zone. Electron-phonon and hole-phonon scattering lead to a gradual relaxation of the carriers towards small $\textit{Active Excitonic Regions}$ around K, enhancing the dielectric screening. The accompanying time-dependent band gap renormalization dominates over Pauli blocking and the excitonic binding energy renormalization. This explains the delayed buildup of the transient reflection signal of the probe pulse, in excellent agreement with recent experimental data. Our results show that the observed delay is not a unique signature of an exciton formation process but rather caused by coordinated carrier dynamics and its influence on the screening. △ Less

Submitted 6 October, 2020; originally announced October 2020.

Electronic structure of TiSe$_2$ from a quasi-self-consistent G$_0$W$_0$ approach

Authors: Maria Hellgren, Lucas Baguet, Matteo Calandra, Francesco Mauri, Ludger Wirtz

Abstract: In a previous work it was shown that the inclusion of exact exchange is essential for a first principles description of both the electronic- and the vibrational properties of TiSe$_2$, M. Hellgren et al. [Phys. Rev. Lett. 119, 176401 (2017)]. The $GW$ approximation provides a parameter-free description of screened exchange but is usually employed perturbatively ($G_0W_0$) making results more or le… ▽ More In a previous work it was shown that the inclusion of exact exchange is essential for a first principles description of both the electronic- and the vibrational properties of TiSe$_2$, M. Hellgren et al. [Phys. Rev. Lett. 119, 176401 (2017)]. The $GW$ approximation provides a parameter-free description of screened exchange but is usually employed perturbatively ($G_0W_0$) making results more or less dependent on the starting point. In this work, we develop a quasi-self-consistent extension of $G_0W_0$ based on the random phase approximation (RPA) and the optimized effective potential of hybrid density functional theory. This approach generates an optimal $G_0W_0$ starting-point and a hybrid exchange parameter consistent with the RPA. While self-consistency plays a minor role for systems such as Ar, BN and ScN, it is shown to be crucial for TiS$_2$ and TiSe$_2$. We find the high-temperature phase of TiSe$_2$ to be a semi-metal with a band structure in good agreement with experiment. Furthermore, the optimized hybrid functional agrees well with our previous estimate and therefore accurately reproduces the low-temperature charge density wave phase. △ Less

Submitted 2 February, 2021; v1 submitted 29 May, 2020; originally announced May 2020.

Comments: 11 pages, 5 figures

Journal ref: Phys. Rev. B 103, 075101 (2021)

Strongly coupled coherent phonons in single-layer MoS$_2$

Authors: C. Trovatello, H. P. C. Miranda, A. Molina-Sánchez, R. Borrego Varillas, C. Manzoni, L. Moretti, L. Ganzer, M. Maiuri, J. Wang, D. Dumcenco, A. Kis, L. Wirtz, A. Marini, G. Soavi, A. C. Ferrari, G. Cerullo, D. Sangalli, S. Dal Conte

Abstract: We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), wher… ▽ More We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), where the confined dynamical interaction between excitons and phonons is unexplored. The coherent oscillatory motion of the out-of-plane $A'_{1}$ phonons, triggered by the ultrashort laser pulses, dynamically modulates the excitonic resonances on a timescale of few tens fs. We observe an enhancement by almost two orders of magnitude of the CP amplitude when detected in resonance with the C exciton peak, combined with a resonant enhancement of CP generation efficiency. Ab initio calculations of the change in 1L-MoS$_2$ band structure induced by the $A'_{1}$ phonon displacement confirm a strong coupling with the C exciton. The resonant behavior of the CP amplitude follows the same spectral profile of the calculated Raman susceptibility tensor. This demonstrates that CP excitation in 1L-MoS$_2$ can be described as a Raman-like scattering process. These results explain the CP generation process in 1L-TMDs, paving the way for coherent all-optical control of excitons in layered materials in the THz frequency range. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Journal ref: ACS Nano 14, 5700 (2020)

Non-adiabatic exciton-phonon coupling in Raman spectroscopy of layered materials

Authors: Sven Reichardt, Ludger Wirtz

Abstract: We present an ab initio computational approach for the calculation of resonant Raman intensities, including both excitonic and non-adiabatic effects. Our diagrammatic approach, which we apply to two prototype, semiconducting layered materials, allows a detailed analysis of the impact of phonon-mediated exciton-exciton scattering on the intensities. In the case of bulk hexagonal boron nitride, this… ▽ More We present an ab initio computational approach for the calculation of resonant Raman intensities, including both excitonic and non-adiabatic effects. Our diagrammatic approach, which we apply to two prototype, semiconducting layered materials, allows a detailed analysis of the impact of phonon-mediated exciton-exciton scattering on the intensities. In the case of bulk hexagonal boron nitride, this scattering leads to strong quantum interference between different excitonic resonances, strongly redistributing oscillator strength with respect to optical absorption spectra. In the case of MoS$_2$, we observe that quantum interference effects are suppressed by the spin-orbit splitting of the excitons. △ Less

Submitted 31 July, 2020; v1 submitted 31 March, 2019; originally announced April 2019.

Comments: In press at Sci. Adv. Main text: 23 pages, 6 figures; Supplementary Material: 6 pages, 2 figures

Journal ref: Sci. Adv. 6, eabb5915 (2020)

Exciton-phonon coupling in the UV absorption and emission spectra of bulk hexagonal boron nitride

Authors: Fulvio Paleari, Henrique P. C. Miranda, Alejandro Molina-Sánchez, Ludger Wirtz

Abstract: We present an \textit{ab initio} method to calculate phonon-assisted absorption and emission spectra in the presence of strong excitonic effects. We apply the method to bulk hexagonal BN which has an indirect band gap and is known for its strong luminescence in the UV range. We first analyse the excitons at the wave vector $\overline{q}$ of the indirect gap. The coupling of these excitons with the… ▽ More We present an \textit{ab initio} method to calculate phonon-assisted absorption and emission spectra in the presence of strong excitonic effects. We apply the method to bulk hexagonal BN which has an indirect band gap and is known for its strong luminescence in the UV range. We first analyse the excitons at the wave vector $\overline{q}$ of the indirect gap. The coupling of these excitons with the various phonon modes at $\overline{q}$ is expressed in terms of a product of the mean square displacement of the atoms and the second derivative of the optical response function with respect to atomic displacement along the phonon eigenvectors. The derivatives are calculated numerically with a finite difference scheme in a supercell commensurate with $\overline{q}$. We use detailed balance arguments to obtain the intensity ratio between emission and absorption processes. Our results explain recent luminescence experiments and reveal the exciton-phonon coupling channels responsible for the emission lines. △ Less

Submitted 30 October, 2018; v1 submitted 21 October, 2018; originally announced October 2018.

Comments: Main text: 5 pages, 3 figures. The supplementary material (10 pages, 11 figures) follows the main text

Journal ref: Phys. Rev. Lett. 122, 187401 (2019)

Searching for Materials with High Refractive Index and Wide Band Gap: A First-Principles High-Throughput Study

Authors: Francesco Naccarato, Francesco Ricci, ** Suntivich, Geoffroy Hautier, Ludger Wirtz, Gian-Marco Rignanese

Abstract: Materials combining both a high refractive index and a wide band gap are of great interest for optoelectronic and sensor applications. However, these two properties are typically described by an inverse correlation with high refractive index appearing in small gap materials and vice-versa. Here, we conduct a first-principles high-throughput study on more than 4000 semiconductors (with a special fo… ▽ More Materials combining both a high refractive index and a wide band gap are of great interest for optoelectronic and sensor applications. However, these two properties are typically described by an inverse correlation with high refractive index appearing in small gap materials and vice-versa. Here, we conduct a first-principles high-throughput study on more than 4000 semiconductors (with a special focus on oxides). Our data confirm the general inverse trend between refractive index and band gap but interesting outliers are also identified. The data are then analyzed through a simple model involving two main descriptors: the average optical gap and the effective frequency. The former can be determined directly from the electronic structure of the compounds, but the latter cannot. This calls for further analysis in order to obtain a predictive model. Nonetheless, it turns out that the negative effect of a large band gap on the refractive index can counterbalanced in two ways: (i) by limiting the difference between the direct band gap and the average optical gap which can be realized by a narrow distribution in energy of the optical transitions and (ii) by increasing the effective frequency which can be achieved through either a high number of transitions from the top of the valence band to the bottom of the conduction or a high average probability for these transitions. Focusing on oxides, we use our data to investigate how the chemistry influences this inverse relationship and rationalize why certain classes of materials would perform better. Our findings can be used to search for new compounds in many optical applications both in the linear and non-linear regime (waveguides, optical modulators, laser, frequency converter, etc.). △ Less

Submitted 25 March, 2019; v1 submitted 4 September, 2018; originally announced September 2018.

Comments: The manuscript is made of 10 pages with 6 figures and 1 table. At the end of the main text, there is an appendix with 2 figures. Supplemental material includes 7 figures and 6 tables. In the db.csv file there are the materials properties we computed in this work

Journal ref: Phys. Rev. Materials 3, 044602 (2019)

Theory of resonant Raman scattering: Toward a comprehensive \textit{ab initio} description

Authors: Sven Reichardt, Ludger Wirtz

Abstract: We develop a general, fully quantum mechanical theory of Raman scattering from first principles in terms of many-body correlation functions. In order to arrive at expressions that are practically useful in the context of condensed matter physics, we adopt the Lehmann-Symanzik-Zimmermann reduction formula from high-energy physics and formulate in the modern language of many-body perturbation theory… ▽ More We develop a general, fully quantum mechanical theory of Raman scattering from first principles in terms of many-body correlation functions. In order to arrive at expressions that are practically useful in the context of condensed matter physics, we adopt the Lehmann-Symanzik-Zimmermann reduction formula from high-energy physics and formulate in the modern language of many-body perturbation theory. This enables us to derive a general and practically useful expression for the Raman scattering rate in terms of quantities that can be computed \textit{ab initio}. Our work paves the way toward a comprehensive computational approach to the calculation of Raman spectra that goes beyond the current state of the art by capturing both excitonic and non-adiabatic effects. △ Less

Submitted 16 March, 2019; v1 submitted 24 August, 2018; originally announced August 2018.

Comments: 19 pages

Journal ref: Phys. Rev. B 99, 174312 (2019)

Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration and electronic correlation

Authors: Lorenzo Sponza, Hakim Amara, Claudio Attaccalite, Sylvain Latil, Thomas Galvani, Fulvio Paleari, Ludger Wirtz, François Ducastelle

Abstract: We compute and discuss the electronic band structure and excitonic dispersion of hexagonal boron nitride (hBN) in the single layer configuration and in three bulk polymorphs (usual AA' stacking, Bernal AB, and rhombohedral ABC). We focus on the changes in the electronic band structure and the exciton dispersion induced by the atomic configuration and the electron-hole interaction. Calculations are… ▽ More We compute and discuss the electronic band structure and excitonic dispersion of hexagonal boron nitride (hBN) in the single layer configuration and in three bulk polymorphs (usual AA' stacking, Bernal AB, and rhombohedral ABC). We focus on the changes in the electronic band structure and the exciton dispersion induced by the atomic configuration and the electron-hole interaction. Calculations are carried out on the level of \textit{ab initio} many-body perturbation theory (GW and Bethe Salpeter equation) and by means of an appropriate tight-binding model. We confirm the change from direct to indirect electronic gap when going from single layer to bulk systems and we give a detailed account of its origin by comparing the effect of different stacking sequences. We emphasize that the inclusion of the electron-hole interaction is crucial for the correct description of the momentum-dependent dispersion of the excitations. It flattens the exciton dispersion with respect to the one obtained from the dispersion of excitations in the independent-particle picture. In the AB stacking this effect is particularly important as the lowest-lying exciton is predicted to be direct despite the indirect electronic band gap. △ Less

Submitted 4 July, 2018; v1 submitted 16 June, 2018; originally announced June 2018.

Comments: 19 pages, 14 figures, 7 appendixes

Journal ref: Phys. Rev. B 98, 125206 (2018)

Direct observation of intravalley spin relaxation in single-layer WS$_2$

Authors: Z. Wang, A. Molina-Sanchez, P. Altmann, D. Sangalli, D. De Fazio, G. Soavi, U. Sassi, F. Bottegoni, F. Ciccacci, M. Finazzi, L. Wirtz, A. C. Ferrari, A. Marini, G. Cerullo, S. Dal Conte

Abstract: In monolayer Transition Metal Dichalcogenides (TMDs) the valence and conduction bands are spin split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-ordering of the conduction band is such that the so-called dark exciton, consisting of an electron and a hole with opposite spin orientation, has lower energy than the A exciton. A possible mechanism leading to the transi… ▽ More In monolayer Transition Metal Dichalcogenides (TMDs) the valence and conduction bands are spin split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-ordering of the conduction band is such that the so-called dark exciton, consisting of an electron and a hole with opposite spin orientation, has lower energy than the A exciton. A possible mechanism leading to the transition from bright to dark excitons involves the scattering of the electrons from the upper to the lower conduction band state in K. Here we exploit the valley selective optical selection rules and use two-color helicity-resolved pump-probe spectroscopy to directly measure the intravalley spin-flip relaxation dynamics of electrons in the conduction band of single-layer WS$_2$. This process occurs on a sub-ps time scale and it is significantly dependent on the temperature, indicative of a phonon-assisted relaxation. These experimental results are supported by time-dependent ab-initio calculations which show that the intra-valley spin-flip scattering occurs on significantly longer time scales only exactly at the K point. In a realistic situation the occupation of states away from the minimum of the conduction band leads to a dramatic reduction of the scattering time. △ Less

Submitted 16 May, 2018; originally announced May 2018.

Inter- and intra-layer excitons in MoS$_2$/WS$_2$ and MoSe$_2$/WSe$_2$ heterobilayers

Authors: E. Torun, A. Molina-Sánchez, H. P. C. Miranda, L. Wirtz

Abstract: Accurately described excitonic properties of transition metal dichalcogenide heterobilayers (HBLs) are crucial to comprehend the optical response and the charge carrier dynamics of them. Excitons in multilayer systems posses inter or intralayer character whose spectral positions depend on their binding energy and the band alignment of the constituent single-layers. In this study, we report the ele… ▽ More Accurately described excitonic properties of transition metal dichalcogenide heterobilayers (HBLs) are crucial to comprehend the optical response and the charge carrier dynamics of them. Excitons in multilayer systems posses inter or intralayer character whose spectral positions depend on their binding energy and the band alignment of the constituent single-layers. In this study, we report the electronic structure and the absorption spectra of MoS$_2$/WS$_2$ and MoSe$_2$/WSe$_2$ HBLs from first-principles calculations. We explore the spectral positions, binding energies and the origins of inter and intralayer excitons and compare our results with experimental observations. The absorption spectra of the systems are obtained by solving the Bethe-Salpeter equation on top of a G$_0$W$_0$ calculation which corrects the independent particle eigenvalues obtained from density functional theory calculations. Our calculations reveal that the lowest energy exciton in both HBLs possesses interlayer character which is decisive regarding their possible device applications. Due to the spatially separated nature of the charge carriers, the binding energy of inter-layer excitons might be expected to be considerably smaller than that of intra-layer ones. However, according to our calculations the binding energy of lowest energy interlayer excitons is only $\sim$ 20\% lower due to the weaker screening of the Coulomb interaction between layers of the HBLs. Therefore, it can be deduced that the spectral positions of the interlayer excitons with respect to intralayer ones are mostly determined by the band offset of the constituent single-layers. By comparing oscillator strengths and thermal occupation factors, we show that in luminescence at low temperature, the interlayer exciton peak becomes dominant, while in absorption it is almost invisible. △ Less

Submitted 14 March, 2018; originally announced March 2018.

Comments: 17 pages, 4 figures

Excitons in few-layer hexagonal boron nitride: Davydov splitting and surface localization

Authors: Fulvio Paleari, Thomas Galvani, Hakim Amara, François Ducastelle, Alejandro Molina-Sánchez, Ludger Wirtz

Abstract: Hexagonal boron nitride (hBN) has been attracting great attention because of its strong excitonic effects. Taking into account few-layer systems, we investigate theoretically the effects of the number of layers on quasiparticle energies, absorption spectra, and excitonic states, placing particular focus on the Davydov splitting of the lowest bound excitons. We describe how the inter-layer interact… ▽ More Hexagonal boron nitride (hBN) has been attracting great attention because of its strong excitonic effects. Taking into account few-layer systems, we investigate theoretically the effects of the number of layers on quasiparticle energies, absorption spectra, and excitonic states, placing particular focus on the Davydov splitting of the lowest bound excitons. We describe how the inter-layer interaction as well as the variation in electronic screening as a function of layer number $N$ affects the electronic and optical properties. Using both \textit{ab initio} simulations and a tight-binding model for an effective Hamiltonian describing the excitons, we characterize in detail the symmetry of the excitonic wavefunctions and the selection rules for their coupling to incoming light. We show that for $N > 2$, one can distinguish between surface excitons that are mostly localized on the outer layers and inner excitons, leading to an asymmetry in the energy separation between split excitonic states. In particular, the bound surface excitons lie lower in energy than their inner counterparts. Additionally, this enables us to show how the layer thickness affects the shape of the absorption spectrum. △ Less

Submitted 2 March, 2018; originally announced March 2018.

Comments: 24 pages, 10 figures

Impact of Many-Body Effects on Landau Levels in Graphene

Authors: J. Sonntag, S. Reichardt, L. Wirtz, B. Beschoten, M. I. Katsnelson, F. Libisch, C. Stampfer

Abstract: We present magneto-Raman spectroscopy measurements on suspended graphene to investigate the charge carrier density-dependent electron-electron interaction in the presence of Landau levels. Utilizing gate-tunable magneto-phonon resonances, we extract the charge carrier density dependence of the Landau level transition energies and the associated effective Fermi velocity $v_\mathrm{F}$. In contrast… ▽ More We present magneto-Raman spectroscopy measurements on suspended graphene to investigate the charge carrier density-dependent electron-electron interaction in the presence of Landau levels. Utilizing gate-tunable magneto-phonon resonances, we extract the charge carrier density dependence of the Landau level transition energies and the associated effective Fermi velocity $v_\mathrm{F}$. In contrast to the logarithmic divergence of $v_\mathrm{F}$ at zero magnetic field, we find a piecewise linear scaling of $v_\mathrm{F}$ as a function of charge carrier density, due to a magnetic field-induced suppression of the long-range Coulomb interaction. We quantitatively confirm our experimental findings by performing tight-binding calculations on the level of the Hartree-Fock approximation, which also allow us to estimate an excitonic binding energy of $\approx$ 6 meV contained in the experimentally extracted Landau level transitions energies. △ Less

Submitted 21 February, 2018; v1 submitted 15 December, 2017; originally announced December 2017.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. Lett. 120, 187701 (2018)

Ab initio calculations of ultra-short carrier dynamics in 2D materials: valley depolarization in single-layer WSe$_2$

Authors: Alejandro Molina-Sánchez, Davide Sangalli, Ludger Wirtz, Andrea Marini

Abstract: In single-layer WSe$_2$, a paradigmatic semiconducting transition metal dichalcogenide, a circularly polarized laser field can selectively excite electronic transitions in one of the inequivalent $K^{\pm}$ valleys. Such selective valley population corresponds to a pseudospin polarization. This can be used as a degree of freedom in a valleytronic device provided that the time scale for its depolari… ▽ More In single-layer WSe$_2$, a paradigmatic semiconducting transition metal dichalcogenide, a circularly polarized laser field can selectively excite electronic transitions in one of the inequivalent $K^{\pm}$ valleys. Such selective valley population corresponds to a pseudospin polarization. This can be used as a degree of freedom in a valleytronic device provided that the time scale for its depolarization is sufficiently large. Yet, the mechanism behind the valley depolarization still remains heavily debated. Recent time-dependent Kerr experiments have provided an accurate way to visualize the valley dynamics by measuring the rotation of a linearly polarized probe pulse applied after a circularly polarized pump pulse. We present here a clear, accurate and parameter-free description of the valley dynamics. By using an atomistic, ab initio, approach we fully disclose the elemental mechanisms that dictate the depolarization effects. Our results are in excellent agreement with recent time-dependent Kerr experiments. We explain the Kerr dynamics and its temperature dependence in terms of electron-phonon mediated processes that induce spin-flip inter-valley transitions. △ Less

Submitted 22 August, 2017; originally announced August 2017.

Journal ref: Nano Lett. 17, 4549 (2017)

Critical role of the exchange interaction for the electronic structure and charge-density-wave formation in TiSe2

Authors: Maria Hellgren, Jacopo Baima, Raffaello Bianco, Matteo Calandra, Francesco Mauri, Ludger Wirtz

Abstract: We show that the inclusion of screened exchange via hybrid functionals provides a unified description of the electronic and vibrational properties of TiSe2. In contrast to local approximations in density functional theory, the explicit inclusion of exact, non-local exchange captures the effects of the electron-electron interaction needed to both separate the Ti-d states from the Se-p states and st… ▽ More We show that the inclusion of screened exchange via hybrid functionals provides a unified description of the electronic and vibrational properties of TiSe2. In contrast to local approximations in density functional theory, the explicit inclusion of exact, non-local exchange captures the effects of the electron-electron interaction needed to both separate the Ti-d states from the Se-p states and stabilize the charge-density-wave (CDW) (or low-T) phase through the formation of a p-d hybridized state. We further show that this leads to an enhanced electron-phonon coupling that can drive the transition even if a small gap opens in the high-T phase. Finally, we demonstrate that the hybrid functionals can generate a CDW phase where the electronic bands, the geometry, and the phonon frequencies are in agreement with experiments. △ Less

Submitted 18 October, 2017; v1 submitted 19 April, 2017; originally announced April 2017.

Comments: Supplemental Material included. To appear in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 119, 176401 (2017)

Raman Spectroscopy of Graphene

Authors: Sven Reichardt, Ludger Wirtz

Abstract: Raman spectroscopy of graphene is reviewed from a theoretical perspective. After an introduction of the building blocks (electronic band structure, phonon dispersion, electron-phonon interaction, electron-light coupling), Raman intensities are calculated using time-dependent perturbation theory. The analysis of the contributing terms allows for an intuitive understanding of the Raman peak position… ▽ More Raman spectroscopy of graphene is reviewed from a theoretical perspective. After an introduction of the building blocks (electronic band structure, phonon dispersion, electron-phonon interaction, electron-light coupling), Raman intensities are calculated using time-dependent perturbation theory. The analysis of the contributing terms allows for an intuitive understanding of the Raman peak positions and intensities. The Raman spectrum of pure graphene only displays two principle peaks. Yet, their variation as a function of internal and external parameters and the occurrence of secondary, defect-related peaks, conveys a lot of information about the system. Thus, Raman spectroscopy is used routinely to analyze layer number, defects, do** and strain of graphene samples. At the same time, it is an intriguing playground to study the optical properties of graphene. △ Less

Submitted 21 March, 2017; v1 submitted 20 March, 2017; originally announced March 2017.

Comments: 25 pages; v2: fixed title and legal information

Journal ref: Optical Properties of Graphene, Rolf Binder (editor), copyright World Scientific Publishing Company 2017 http://www.worldscientific.com/worldscibooks/10.1142/10255

Quantum interference effects in resonant Raman spectroscopy of single- and triple-layer MoTe$_2$ from first principles

Authors: Henrique P. C. Miranda, Sven Reichardt, Guillaume Froehlicher, Alejandro Molina-Sánchez, Stéphane Berciaud, Ludger Wirtz

Abstract: We present a combined experimental and theoretical study of resonant Raman spectroscopy in single- and triple-layer MoTe$_2$. Raman intensities are computed entirely from first principles by calculating finite differences of the dielectric susceptibility. In our analysis, we investigate the role of quantum interference effects and the electron-phonon coupling. With this method, we explain the expe… ▽ More We present a combined experimental and theoretical study of resonant Raman spectroscopy in single- and triple-layer MoTe$_2$. Raman intensities are computed entirely from first principles by calculating finite differences of the dielectric susceptibility. In our analysis, we investigate the role of quantum interference effects and the electron-phonon coupling. With this method, we explain the experimentally observed intensity inversion of the $A^\prime_1$ vibrational modes in triple-layer MoTe2 with increasing laser photon energy. Finally, we show that a quantitative comparison with experimental data requires the proper inclusion of excitonic effects. △ Less

Submitted 17 February, 2017; originally announced February 2017.

Comments: Main Text (5 Figures, 1 Tables) + Supporting Information (6 Figures)

Ab initio calculation of the $G$ peak intensity of graphene: Combined study of the laser and Fermi energy dependence and importance of quantum interference effects

Authors: Sven Reichardt, Ludger Wirtz

Abstract: We present the results of a diagrammatic, fully ab initio calculation of the $G$ peak intensity of graphene. The flexibility and generality of our approach enables us to go beyond the previous analytical calculations in the low-energy regime. We study the laser and Fermi energy dependence of the $G$ peak intensity and analyze the contributions from resonant and non-resonant electronic transitions.… ▽ More We present the results of a diagrammatic, fully ab initio calculation of the $G$ peak intensity of graphene. The flexibility and generality of our approach enables us to go beyond the previous analytical calculations in the low-energy regime. We study the laser and Fermi energy dependence of the $G$ peak intensity and analyze the contributions from resonant and non-resonant electronic transitions. In particular, we explicitly demonstrate the importance of quantum interference and non-resonant states for the $G$ peak process. Our method of analysis and computational concept is completely general and can easily be applied to study other materials as well. △ Less

Submitted 23 January, 2017; originally announced January 2017.

Comments: 10 pages, 5 figures

Journal ref: Phys. Rev. B 95, 195422 (2017)

Tuning the pseudospin polarization of graphene by a pseudo-magnetic field

Authors: Alexander Georgi, Peter Nemes-Incze, Ramon Carrillo-Bastos, Daiara Faria, Silvia Viola Kusminskiy, Dawei Zhai, Martin Schneider, Dinesh Subramaniam, Torge Mashoff, Nils M. Freitag, Marcus Liebmann, Marco Pratzer, Ludger Wirtz, Colin R. Woods, Roman V. Gorbachev, Yang Cao, Kostya S. Novoselov, Nancy Sandler, Markus Morgenstern

Abstract: One of the intriguing characteristics of honeycomb lattices is the appearance of a pseudo-magnetic field as a result of mechanical deformation. In the case of graphene, the Landau quantization resulting from this pseudo-magnetic field has been measured using scanning tunneling microscopy. Here we show that a signature of the pseudo-magnetic field is a local sublattice symmetry breaking observable… ▽ More One of the intriguing characteristics of honeycomb lattices is the appearance of a pseudo-magnetic field as a result of mechanical deformation. In the case of graphene, the Landau quantization resulting from this pseudo-magnetic field has been measured using scanning tunneling microscopy. Here we show that a signature of the pseudo-magnetic field is a local sublattice symmetry breaking observable as a redistribution of the local density of states. This can be interpreted as a polarization of graphene's pseudospin due to a strain induced pseudo-magnetic field, in analogy to the alignment of a real spin in a magnetic field. We reveal this sublattice symmetry breaking by tunably straining graphene using the tip of a scanning tunneling microscope. The tip locally lifts the graphene membrane from a SiO$_2$ support, as visible by an increased slope of the $I(z)$ curves. The amount of lifting is consistent with molecular dynamics calculations, which reveal a deformed graphene area under the tip in the shape of a Gaussian. The pseudo-magnetic field induced by the deformation becomes visible as a sublattice symmetry breaking which scales with the lifting height of the strained deformation and therefore with the pseudo-magnetic field strength. Its magnitude is quantitatively reproduced by analytic and tight-binding models, revealing fields of 1000 T. These results might be the starting point for an effective THz valley filter, as a basic element of valleytronics. △ Less

Submitted 6 March, 2017; v1 submitted 18 November, 2016; originally announced November 2016.

Comments: Revised manuscript: streamlined the abstract and introduction, added methods to supplement, Nano Letters, 2017

Vibrational and optical properties of MoS$_2$: from monolayer to bulk

Authors: Alejandro Molina-Sánchez, Kerstin Hummer, Ludger Wirtz

Abstract: Molybdenum disulfide, MoS2, has recently gained considerable attention as a layered material where neighboring layers are only weakly interacting and can easily slide against each other. Therefore, mechanical exfoliation allows the fabrication of single and multi-layers and opens the possibility to generate atomically thin crystals with outstanding properties. In contrast to graphene, it has an op… ▽ More Molybdenum disulfide, MoS2, has recently gained considerable attention as a layered material where neighboring layers are only weakly interacting and can easily slide against each other. Therefore, mechanical exfoliation allows the fabrication of single and multi-layers and opens the possibility to generate atomically thin crystals with outstanding properties. In contrast to graphene, it has an optical gap of 1.9 eV. This makes it a prominent candidate for transistor and opto-electronic applications. Single-layer MoS$_2$ exhibits remarkably different physical properties compared to bulk MoS$_2$ due to the absence of interlayer hybridization. For instance, while the band gap of bulk and multi-layer MoS$_2$ is indirect, it becomes direct with decreasing number of layers. In this review, we analyze from a theoretical point of view the electronic, optical, and vibrational properties of single-layer, few-layer and bulk MoS$_2$. In particular, we focus on the effects of spin-orbit interaction, number of layers, and applied tensile strain on the vibrational and optical properties. We examine the results obtained by different methodologies, mainly ab initio approaches. We also discuss which approximations are suitable for MoS$_2$ and layered materials. The effect of external strain on the band gap of single-layer MoS$_2$ and the crossover from indirect to direct band gap is investigated. We analyze the excitonic effects on the absorption spectra. The main features, such as the double peak at the absorption threshold and the high-energy exciton are presented. Furthermore, we report on the phonon dispersion relations of single-layer, few-layer and bulk MoS$_2$. Based on the latter, we explain the behavior of the Raman-active $A_{1g}$ and $E^1_{2g}$ modes as a function of the number of layers. △ Less

Submitted 9 June, 2016; originally announced June 2016.

Journal ref: Surface Science Reports 70, 554-586 (2015)

Excitons in boron nitride single layer

Authors: Thomas Galvani, Fulvio Paleari, Henrique Miranda, Alejandro Molina-Sánchez, Ludger Wirtz, Sylvain Latil, Hakim Amara, François Ducastelle

Abstract: Boron nitride single layer belongs to the family of 2D materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are predicted for single layers. We present here a detailed study of these properties by combining \textit{ab initio} calculations and a tight-binding-Wannier analysis in… ▽ More Boron nitride single layer belongs to the family of 2D materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are predicted for single layers. We present here a detailed study of these properties by combining \textit{ab initio} calculations and a tight-binding-Wannier analysis in both real and reciprocal space. Due to the simplicity of the band structure with single valence ($π$) and conduction ($π^*$) bands the tight-binding analysis becomes quasi quantitative with only two adjustable parameters and provides tools for a detailed analysis of the exciton properties. Strong deviations from the usual hydrogenic model are evidenced. The ground state exciton is not a genuine Frenkel exciton, but a very localized "tightly-bound" one. The other ones are similar to those found in transition metal dichalcogenides and, although more localized, can be described within a Wannier-Mott scheme. △ Less

Submitted 31 May, 2016; originally announced May 2016.

Temperature dependent excitonic effects in the optical properties of single-layer MoS$_2$

Authors: Alejandro Molina-Sánchez, Maurizia Palummo, Andrea Marini, Ludger Wirtz

Abstract: Temperature influences the performance of two-dimensional materials in optoelectronic devices. Indeed, the optical characterization of these materials is usually realized at room temperature. Nevertheless most {\it ab-initio} studies are yet performed without including any temperature effect. As a consequence, important features are thus overlooked, such as the relative intensity of the excitonic… ▽ More Temperature influences the performance of two-dimensional materials in optoelectronic devices. Indeed, the optical characterization of these materials is usually realized at room temperature. Nevertheless most {\it ab-initio} studies are yet performed without including any temperature effect. As a consequence, important features are thus overlooked, such as the relative intensity of the excitonic peaks and their broadening, directly related to the temperature and to the non-radiative exciton relaxation time. We present {\it ab-initio} calculations of the optical response of single-layer MoS$_2$, a prototype 2D material, as a function of temperature using density functional theory and many-body perturbation theory. We compute the electron-phonon interaction using the full spinorial wave functions, i.e., fully taking into account effects of spin-orbit interaction. We find that bound excitons ($A$ and $B$ peaks) and resonant excitons ($C$ peak) exhibit different behavior with temperature, displaying different non-radiative linewidths. We conclude that the inhomogeneous broadening of the absorption spectra is mainly due to electron-phonon scattering mechanisms. Our calculations explain the shortcomings of previous (zero-temperature) theoretical spectra and match well with the experimental spectra acquired at room temperature. Moreover, we disentangle the contributions of acoustic and optical phonon modes to the quasi-particles and exciton linewidths. Our model also allows to identify which phonon modes couple to each exciton state, useful for the interpretation of resonant Raman scattering experiments. △ Less

Submitted 4 April, 2016; originally announced April 2016.

Journal ref: Phys. Rev. B 93 (2016) 155435

Unified description of the optical phonon modes in $N$-layer MoTe$_2$

Authors: Guillaume Froehlicher, Etienne Lorchat, François Fernique, Chaitanya Joshi, Alejandro Molina-Sánchez, Ludger Wirtz, Stéphane Berciaud

Abstract: $N$-layer transition metal dichalcogenides provide a unique platform to investigate the evolution of the physical properties between the bulk (three dimensional) and monolayer (quasi two-dimensional) limits. Here, using high-resolution micro-Raman spectroscopy, we report a unified experimental description of the $Γ$-point optical phonons in $N$-layer $2H$-molybdenum ditelluride (MoTe$_2… ▽ More $N$-layer transition metal dichalcogenides provide a unique platform to investigate the evolution of the physical properties between the bulk (three dimensional) and monolayer (quasi two-dimensional) limits. Here, using high-resolution micro-Raman spectroscopy, we report a unified experimental description of the $Γ$-point optical phonons in $N$-layer $2H$-molybdenum ditelluride (MoTe$_2$). We observe a series of $N$-dependent low-frequency interlayer shear and breathing modes (below $40~\rm cm^{-1}$, denoted LSM and LBM) and well-defined Davydov splittings of the mid-frequency modes (in the range $100-200~\rm cm^{-1}$, denoted iX and oX), which solely involve displacements of the chalcogen atoms. In contrast, the high-frequency modes (in the range $200-300~\rm cm^{-1}$, denoted iMX and oMX), arising from displacements of both the metal and chalcogen atoms, exhibit considerably reduced splittings. The manifold of phonon modes associated with the in-plane and out-of-plane displacements are quantitatively described by a force constant model, including interactions up to the second nearest neighbor and surface effects as fitting parameters. The splittings for the iX and oX modes observed in $N$-layer crystals are directly correlated to the corresponding bulk Davydov splittings between the $E_{2u}/E_{1g}$ and $B_{1u}/A_{1g}$ modes, respectively, and provide a measurement of the frequencies of the bulk silent $E_{2u}$ and $B_{1u}$ optical phonon modes. Our analysis could readily be generalized to other layered crystals. △ Less

Submitted 28 September, 2015; v1 submitted 9 September, 2015; originally announced September 2015.

Comments: Main Text (5 Figures, 2 Tables) + Supporting Information (12 Figures)

Journal ref: Nano Letters 15, 6481 (2015)

Ab-initio perspective on the Mollwo-Ivey relation for F-centers in alkali halides

Authors: P. Tiwald, F. Karsai, R. Laskowski, S. Gräfe, P. Blaha, J. Burgdörfer, L. Wirtz

Abstract: We revisit the well-known Mollwo-Ivey relation that describes the "universal" dependence of the absorption energies of F-type color centers on the lattice constant $a$ of the alkali-halide crystals, $E_{\mbox{abs}}\propto a^{-n}.$ We perform both state-of-the-art ab-initio Quantum Chemistry and post-DFT calculations of F-center absorption spectra. By "tuning" independently the lattice constant and… ▽ More We revisit the well-known Mollwo-Ivey relation that describes the "universal" dependence of the absorption energies of F-type color centers on the lattice constant $a$ of the alkali-halide crystals, $E_{\mbox{abs}}\propto a^{-n}.$ We perform both state-of-the-art ab-initio Quantum Chemistry and post-DFT calculations of F-center absorption spectra. By "tuning" independently the lattice constant and the atomic species we show that the scaling of the lattice constant alone (kee** the elements fixed) would yield $n=2$ in agreement with the "particle-in-the-box" model. Kee** the lattice constant fixed and changing the atomic species enables us to quantify the ion-size effects which are shown to be responsible for the exponent $n \approx 1.8$. △ Less

Submitted 8 July, 2015; originally announced July 2015.

Journal ref: Phys. Rev. B 92, 144107 (2015)

Phonon-limited carrier mobility and resistivity from carbon nanotubes to graphene

Authors: **g Li, Henrique Pereira Coutada Miranda, Yann-Michel Niquet, Luigi Genovese, Ivan Duchemin, Ludger Wirtz, Christophe Delerue

Abstract: Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calculations of the phonon-limited electrical mobility in graphene and in a wide range of CNTs of different types to address this issue. The theoretical study is based on a tight-binding method and a force-constant model from w… ▽ More Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calculations of the phonon-limited electrical mobility in graphene and in a wide range of CNTs of different types to address this issue. The theoretical study is based on a tight-binding method and a force-constant model from which all possible electron-phonon couplings are computed. The electrical resistivity of graphene is found in very good agreement with experiments performed at high carrier density. A common methodology is applied to study the transition from 1D to 2D by considering CNTs with diameter up to 16 nm. It is found that the mobility in CNTs of increasing diameter converges to the same value, the mobility in graphene. This convergence is much faster at high temperature and high carrier density. For small-diameter CNTs, the mobility strongly depends on chirality, diameter, and existence of a bandgap. △ Less

Submitted 25 August, 2015; v1 submitted 16 April, 2015; originally announced April 2015.

Comments: 12 pages

Journal ref: Phys. Rev. B 92, 075414 (2015)

Screening of electron-phonon coupling in graphene on Ir(111)

Authors: M. Endlich, A. Molina-Sánchez, L. Wirtz, J. Kröger

Abstract: The phonon dispersion of graphene on Ir(111) has been determined by means of angle-resolved inelastic electron scattering and density functional calculations. Kohn anomalies of the highest optical-phonon branches are observed at the $Γ$ and K point of the surface Brillouin zone. At K the Kohn anomaly is weaker than observed from pristine graphene and graphite. This observation is rationalized in t… ▽ More The phonon dispersion of graphene on Ir(111) has been determined by means of angle-resolved inelastic electron scattering and density functional calculations. Kohn anomalies of the highest optical-phonon branches are observed at the $Γ$ and K point of the surface Brillouin zone. At K the Kohn anomaly is weaker than observed from pristine graphene and graphite. This observation is rationalized in terms of a decrease of the electron-phonon coupling due to screening of graphene electron correlations by the metal substrate. △ Less

Submitted 29 October, 2013; v1 submitted 24 October, 2013; originally announced October 2013.

Efficient Gate-tunable light-emitting device made of defective boron nitride nanotubes: from ultraviolet to the visible

Authors: Claudio Attaccalite, Ludger Wirtz, Andrea Marini, Angel Rubio

Abstract: Boron nitride is a promising material for nanotechnology applications due to its two-dimensional graphene-like, insulating, and highly-resistant structure. Recently it has received a lot of attention as a substrate to grow and isolate graphene as well as for its intrinsic UV lasing response. Similar to carbon, one-dimensional boron nitride nanotubes (BNNTs) have been theoretically predicted and la… ▽ More Boron nitride is a promising material for nanotechnology applications due to its two-dimensional graphene-like, insulating, and highly-resistant structure. Recently it has received a lot of attention as a substrate to grow and isolate graphene as well as for its intrinsic UV lasing response. Similar to carbon, one-dimensional boron nitride nanotubes (BNNTs) have been theoretically predicted and later synthesised. Here we use first principles simulations to unambiguously demonstrate that i) BN nanotubes inherit the highly efficient UV luminescence of hexagonal BN; ii) the application of an external perpendicular field closes the electronic gap kee** the UV lasing with lower yield; iii) defects in BNNTS are responsible for tunable light emission from the UV to the visible controlled by a transverse electric field (TEF). Our present findings pave the road towards optoelectronic applications of BN-nanotube-based devices that are simple to implement because they do not require any special do** or complex growth. △ Less

Submitted 24 September, 2013; originally announced September 2013.

Comments: 22 pages, 6 figures

Journal ref: Nature Scientific Reports 3, Article number: 2698 (2013)

Manifestation of charged and strained graphene layers in the Raman response of graphite intercalation compounds

Authors: J. C. Chacon-Torres, L. Wirtz, T. Pichler

Abstract: We present detailed multi frequency resonant Raman measurements of potassium graphite intercalation compounds (GICs). From a well controlled and consecutive in-situ intercalation and high temperature de-intercalation approach the response of each stage up to stage VI is identified. The positions of the G and 2D lines as a function of staging depend on the charge transfer from K to the graphite lay… ▽ More We present detailed multi frequency resonant Raman measurements of potassium graphite intercalation compounds (GICs). From a well controlled and consecutive in-situ intercalation and high temperature de-intercalation approach the response of each stage up to stage VI is identified. The positions of the G and 2D lines as a function of staging depend on the charge transfer from K to the graphite layers and on the lattice expansion. Ab-initio calculations of the density and the electronic band-structure demonstrate that most (but not all) of the transferred charge remains on the graphene sheets adjacent to the intercalant layers. This leads to an electronic decoupling of these "outer" layers from the ones sandwiched between carbon layers and consequently to a decoupling of the corresponding Raman spectra. Thus higher stage GICs offer the possibility to measure the vibrations of single, double, and multi-layer graphene under conditions of biaxial strain. This strain can additionally be correlated to the in-plane lattice constants of GICs determined by x-ray diffraction. The outcome of this study demonstrates that Raman spectroscopy is a very powerful tool to identify local internal strain in pristine and weakly charged single and few-layer graphene and their composites, yielding even absolute lattice constants. △ Less

Submitted 3 July, 2013; originally announced July 2013.

Comments: 24 pages, 5 figures, and 1 table

Journal ref: ACS Nano, 2013, 7 (10), pp 9249-9259

Effect of spin-orbit interaction on the excitonic effects in single-layer, double-layer, and bulk MoS2

Authors: Alejandro Molina-Sánchez, Davide Sangalli, Kerstin Hummer, Andrea Marini, Ludger Wirtz

Abstract: We present converged ab-initio calculations of the optical absorption spectra of single-layer, bi-layer, and bulk MoS$_2$. Both the quasiparticle-energy calculations (on the level of the GW approximation) and the calculation of the absorption spectra (on the level of the Bethe-Salpeter equation) explicitly include spin-orbit coupling, using the full spinorial Kohn-Sham wave-functions as input. Wit… ▽ More We present converged ab-initio calculations of the optical absorption spectra of single-layer, bi-layer, and bulk MoS$_2$. Both the quasiparticle-energy calculations (on the level of the GW approximation) and the calculation of the absorption spectra (on the level of the Bethe-Salpeter equation) explicitly include spin-orbit coupling, using the full spinorial Kohn-Sham wave-functions as input. Without excitonic effects, the absorption spectra would have the form of a step-function, corresponding to the joint-density of states of a parabolic band-dispersion in 2D. This profile is deformed by a pronounced bound excitonic peak below the continuum onset. The peak is split by spin-orbit interaction in the case of single-layer and (mostly) by inter-layer interaction in the case of double-layer and bulk MoS$_2$. The resulting absorption spectra are thus very similar in the three cases but the interpretation of the spectra is different. Differences in the spectra can be seen around 3 eV where the spectra of single and double-layer are dominated by a strongly bound exciton. △ Less

Submitted 20 June, 2013; v1 submitted 18 June, 2013; originally announced June 2013.

Journal ref: Phys. Rev. B 88, 045412 (2013)

Dielectric screening of the Kohn anomaly of graphene on hexagonal boron nitride

Authors: F. Forster, A. Molina-Sanchez, S. Engels, A. Ep**, K. Watanabe, T. Taniguchi, L. Wirtz, C. Stampfer

Abstract: Kohn anomalies in three-dimensional metallic crystals are dips in the phonon dispersion that are caused by abrupt changes in the screening of the ion-cores by the surrounding electron-gas. These anomalies are also present at the high-symmetry points Γand K in the phonon dispersion of two-dimensional graphene, where the phonon wave-vector connects two points on the Fermi surface. The linear slope a… ▽ More Kohn anomalies in three-dimensional metallic crystals are dips in the phonon dispersion that are caused by abrupt changes in the screening of the ion-cores by the surrounding electron-gas. These anomalies are also present at the high-symmetry points Γand K in the phonon dispersion of two-dimensional graphene, where the phonon wave-vector connects two points on the Fermi surface. The linear slope around the kinks in the highest optical branch is proportional to the electron-phonon coupling. Here, we present a combined theoretical and experimental study of the influence of the dielectric substrate on the vibrational properties of graphene. We show that screening by the dielectric substrate reduces the electron-phonon coupling at the high-symmetry point K and leads to an up-shift of the Raman 2D-line. This results in the observation of a Kohn anomaly that can be tuned by screening. The exact position of the 2D-line can thus be taken also as a signature for changes in the (electron-phonon limited) conductivity of graphene. △ Less

Submitted 12 August, 2013; v1 submitted 17 December, 2012; originally announced December 2012.

Journal ref: Phys. Rev. B 88 085419 (2013)

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

Authors: F. Fromm, M. H. Oliveira Jr, A. Molina-Sánchez, M. Hundhausen, J. M. J. Lopes, H. Riechert, L. Wirtz, T. Seyller

Abstract: We report a Raman study of the so-called buffer layer with $(6\sqrt3\times6\sqrt3)R30^{\circ}$ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab-initio phonon… ▽ More We report a Raman study of the so-called buffer layer with $(6\sqrt3\times6\sqrt3)R30^{\circ}$ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab-initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer-layer. △ Less

Submitted 12 December, 2012; v1 submitted 7 December, 2012; originally announced December 2012.

Comments: 12 pages, 6 figures

Journal ref: New Journal of Physics 15 (2013) 043031

Phonons in single and few-layer MoS2 and WS2

Authors: A. Molina-Sánchez, L. Wirtz

Abstract: We report ab-initio calculations of the phonon dispersion relations of the single-layer and bulk dichalcogenides MoS2 and WS2. We explore in detail the behavior of the Raman active modes, A1g and E2g as a function of the number of layers. In agreement with recent Raman spectroscopy measurements [C. Lee et. al., ACS Nano Vol. 4, 2695 (2010)] we find that the A1g mode increases in frequency with inc… ▽ More We report ab-initio calculations of the phonon dispersion relations of the single-layer and bulk dichalcogenides MoS2 and WS2. We explore in detail the behavior of the Raman active modes, A1g and E2g as a function of the number of layers. In agreement with recent Raman spectroscopy measurements [C. Lee et. al., ACS Nano Vol. 4, 2695 (2010)] we find that the A1g mode increases in frequency with increasing layer number while the E2g mode decreases. We explain this decrease by an enhancement of the dielectric screening of the long-range Coulomb interaction between the effective charges with growing number of layers. This decrease in the long-range part over-compensates the increase of the short-range interaction due to the weak inter-layer interaction. △ Less

Submitted 26 September, 2011; originally announced September 2011.

Comments: 8 pages, 6 figures

Journal ref: Physical Review B 84, 155413 (2011)

Coupling of excitons and defect states in boron-nitride nanostructures

Authors: C. Attaccalite, M. Bockstedte, A. Marini, A. Rubio, L. Wirtz

Abstract: The signature of defects in the optical spectra of hexagonal boron nitride (BN) is investigated using many body perturbation theory. A single BN-sheet serves as a model for different layered BN- nanostructures and crystals. In the sheet we embed prototypical defects such as a substitutional impurity, isolated Boron and Nitrogen vacancies, and the di-vacancy. Transitions between the deep defect lev… ▽ More The signature of defects in the optical spectra of hexagonal boron nitride (BN) is investigated using many body perturbation theory. A single BN-sheet serves as a model for different layered BN- nanostructures and crystals. In the sheet we embed prototypical defects such as a substitutional impurity, isolated Boron and Nitrogen vacancies, and the di-vacancy. Transitions between the deep defect levels and extended states produce characteristic excitation bands that should be responsible for the emission band around 4 eV, observed in luminescence experiments. In addition, defect bound excitons occur that are consistently treated in our ab initio approach along with the "free" exciton. For defects in strong concentration, the co-existence of both bound and free excitons adds sub-structure to the main exciton peak and provides an explanation for the corresponding feature in cathodo and photo-luminescence spectra. △ Less

Submitted 14 March, 2011; originally announced March 2011.

Comments: in press on Phys. Rev. B

Journal ref: Phys. Rev. B 83, 144115 (2011)

Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride

Authors: S. Galambosi, L. Wirtz, J. A. Soininen, J. Serrano, A. Marini, K. Watanabe, T. Taniguchi, S. Huotari, A. Rubio, K. Hämäläinen

Abstract: We demonstrate that the valence energy-loss function of hexagonal boron nitride (hBN) displays a strong anisotropy in shape, excitation energy and dispersion for momentum transfer q parallel or perpendicular to the hBN layers. This is manifested by e.g. an energy shift of 0.7 eV that cannot be captured by single-particle approaches and is a demonstration of a strong anisotropy in the two-body el… ▽ More We demonstrate that the valence energy-loss function of hexagonal boron nitride (hBN) displays a strong anisotropy in shape, excitation energy and dispersion for momentum transfer q parallel or perpendicular to the hBN layers. This is manifested by e.g. an energy shift of 0.7 eV that cannot be captured by single-particle approaches and is a demonstration of a strong anisotropy in the two-body electron-hole interaction. Furthermore, for in-plane directions of q we observe a splitting of the -plasmon in the M direction that is absent in the K direction and this can be traced back to band-structure effects. △ Less

Submitted 6 May, 2010; originally announced May 2010.

Comments: 10 pages, 4 figures

Doped graphene as tunable electron-phonon coupling material

Authors: Claudio Attaccalite, Ludger Wirtz, Michele Lazzeri, Francesco Mauri, Angel Rubio

Abstract: We present a new way to tune the electron-phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole do**. We show the EPC for highest optical branch at the high symmetry point K, acquires a strong dependency on the do** level due to electron-electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to… ▽ More We present a new way to tune the electron-phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole do**. We show the EPC for highest optical branch at the high symmetry point K, acquires a strong dependency on the do** level due to electron-electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multi-layer graphene. Finally this do** dependence opens the possibility to construct tunable electronic devices through the external control of the EPC. △ Less

Submitted 25 March, 2010; v1 submitted 4 March, 2010; originally announced March 2010.

Comments: accepted for publication in NanoLetters (DOI: 10.1021/nl9034626)

Journal ref: Nano Letters, 10(2) 1172 (2010)

Transport through open quantum dots: making semiclassics quantitative

Authors: Iva Brezinova, Ludger Wirtz, Stefan Rotter, Christoph Stampfer, Joachim Burgdorfer

Abstract: We investigate electron transport through clean open quantum dots (quantum billiards). We present a semiclassical theory that allows to accurately reproduce quantum transport calculations. Quantitative agreement is reached for individual energy and magnetic field dependent elements of the scattering matrix. Two key ingredients are essential: (i) inclusion of pseudo-paths which have the topology… ▽ More We investigate electron transport through clean open quantum dots (quantum billiards). We present a semiclassical theory that allows to accurately reproduce quantum transport calculations. Quantitative agreement is reached for individual energy and magnetic field dependent elements of the scattering matrix. Two key ingredients are essential: (i) inclusion of pseudo-paths which have the topology of linked classical paths resulting from diffraction in addition to classical paths and (ii) a high-level approximation to diffractive scattering. Within this framework of the pseudo-path semiclassical approximation (PSCA), typical shortcomings of semiclassical theories such as violation of the anti-correlation between reflection and transmission and the overestimation of conductance fluctuations are overcome. Beyond its predictive capabilities the PSCA provides deeper insights into the quantum-to-classical crossover. △ Less

Submitted 30 October, 2009; originally announced October 2009.

Comments: 20 pages, 19 figures

Journal ref: Phys. Rev. B 81, 125308 (2010)

Near Kohn anomalies in the phonon dispersion relations of lead chalcogenides

Authors: Ondrej Kilian, Guy Allan, Ludger Wirtz

Abstract: We present ab-initio phonon dispersion relations for the three lead chalcogenides PbS, PbSe, and PbTe. The acoustic branches are in very good agreement with inelastic neutron-scattering data and calculations of the specific heat give good agreement with experimental data. The pronounced minimum of the transverse optical branch at Gamma due to the near-ferroelectricity of the lead chalcogenides i… ▽ More We present ab-initio phonon dispersion relations for the three lead chalcogenides PbS, PbSe, and PbTe. The acoustic branches are in very good agreement with inelastic neutron-scattering data and calculations of the specific heat give good agreement with experimental data. The pronounced minimum of the transverse optical branch at Gamma due to the near-ferroelectricity of the lead chalcogenides is qualitatively reproduced. In addition, we find a pronounced dip in the longitudinal optical branch at Gamma. This dip was previously explained as the effect of "free carriers" (due to the presence of impurities). The calculations demonstrate that it persists also in the case of pure lead chalcogenides. We explain the dip as a "near Kohn anomaly" which is associated with the small electronic band-gap at the high-symmetry point L. △ Less

Submitted 23 September, 2009; originally announced September 2009.

Comments: submitted to Phys. Rev. B

Journal ref: Phys. Rev. B. 80, 245208 (2009)

Phonon surface map** of graphite: disentangling quasi--degenerate phonon dispersions

Authors: A. Grüneis, J. Serrano, A. Bosak, M. Lazzeri, S. L. Molodtsov, L. Wirtz, C. Attaccalite, M. Krisch, A. Rubio, F. Mauri, T. Pichler

Abstract: The two-dimensional map** of the phonon dispersions around the $K$ point of graphite by inelastic x-ray scattering is provided. The present work resolves the longstanding issue related to the correct assignment of transverse and longitudinal phonon branches at $K$. We observe an almost degeneracy of the three TO, LA and LO derived phonon branches and a strong phonon trigonal war**. Correlati… ▽ More The two-dimensional map** of the phonon dispersions around the $K$ point of graphite by inelastic x-ray scattering is provided. The present work resolves the longstanding issue related to the correct assignment of transverse and longitudinal phonon branches at $K$. We observe an almost degeneracy of the three TO, LA and LO derived phonon branches and a strong phonon trigonal war**. Correlation effects renormalize the Kohn anomaly of the TO mode, which exhibits a trigonal war** effect opposite to that of the electronic band structure. We determined the electron--phonon coupling constant to be 166$\rm(eV/Å)^2$ in excellent agreement to $GW$ calculations. These results are fundamental for understanding angle-resolved photoemission, double--resonance Raman and transport measurements of graphene based systems. △ Less

Submitted 21 April, 2009; originally announced April 2009.

Impact of the electron-electron correlation on phonon dispersions: failure of LDA and GGA functionals in graphene and graphite

Authors: Michele Lazzeri, Claudio Attaccalite, Ludger Wirtz, Francesco Mauri

Abstract: We compute electron-phonon coupling (EPC) of selected phonon modes in graphene and graphite using various ab-initio methods. The inclusion of non-local exchange-correlation effects within the GW approach strongly renormalizes the square EPC of the A$'_1$ {\bf K} mode by almost 80$%$ with respect to density functional theory in the LDA and GGA approximations. Within GW, the phonon slope of the A… ▽ More We compute electron-phonon coupling (EPC) of selected phonon modes in graphene and graphite using various ab-initio methods. The inclusion of non-local exchange-correlation effects within the GW approach strongly renormalizes the square EPC of the A$'_1$ {\bf K} mode by almost 80$%$ with respect to density functional theory in the LDA and GGA approximations. Within GW, the phonon slope of the A$'_1$ {\bf K} mode is almost two times larger than in GGA and LDA, in agreement with phonon dispersions from inelastic x-ray scattering and Raman spectroscopy. The hybrid B3LYP functional overestimates the EPC at {\bf K} by about 30%. Within the Hartree-Fock approximation, the graphene structure displays an instability under a distortion following the A$'_1$ phonon at {\bf K}. △ Less

Submitted 17 August, 2008; originally announced August 2008.

Comments: Accepted for publication by Phys. Rev. B (Rapid Communications)

Journal ref: Phys. Rev. B 78, 081406 (2008)

Tight--binding description of the quasiparticle dispersion of graphite and few--layer graphene

Authors: A. Grüneis, C. Attaccalite, L. Wirtz, H. Shiozawa R. Saito, T. Pichler, A. Rubio

Abstract: A universal set of third--nearest neighbour tight--binding (TB) parameters is presented for calculation of the quasiparticle (QP) dispersion of $N$ stacked $sp^2$ graphene layers ($N=1... \infty$) with $AB$ stacking sequence. The QP bands are strongly renormalized by electron--electron interactions which results in a 20% increase of the nearest neighbour in--plane and out--of--plane TB parameter… ▽ More A universal set of third--nearest neighbour tight--binding (TB) parameters is presented for calculation of the quasiparticle (QP) dispersion of $N$ stacked $sp^2$ graphene layers ($N=1... \infty$) with $AB$ stacking sequence. The QP bands are strongly renormalized by electron--electron interactions which results in a 20% increase of the nearest neighbour in--plane and out--of--plane TB parameters when compared to band structure from density functional theory. With the new set of TB parameters we determine the Fermi surface and evaluate exciton energies, charge carrier plasmon frequencies and the conductivities which are relevant for recent angle--resolved photoemission, optical, electron energy loss and transport measurements. A comparision of these quantitities to experiments yields an excellent agreement. Furthermore we discuss the transition from few layer graphene to graphite and a semimetal to metal transition in a TB framework. △ Less

Submitted 13 August, 2008; v1 submitted 11 August, 2008; originally announced August 2008.

Comments: Corresponding author: A. Grüneis Tel.: +49 351 4659 519 e--mail: [email protected]

Ultrafast Electron-Phonon Decoupling in Graphite

Authors: Kunie Ishioka, Muneaki Hase, Masahiro Kitajima, Ludger Wirtz, Angel Rubio, Hrvoje Petek

Abstract: We report the ultrafast dynamics of the 47.4 THz coherent phonons of graphite interacting with a photoinduced non-equilibrium electron-hole plasma. Unlike conventional materials, upon photoexcitation the phonon frequency of graphite upshifts, and within a few picoseconds relaxes to the stationary value. Our first-principles density functional calculations demonstrate that the phonon stiffening s… ▽ More We report the ultrafast dynamics of the 47.4 THz coherent phonons of graphite interacting with a photoinduced non-equilibrium electron-hole plasma. Unlike conventional materials, upon photoexcitation the phonon frequency of graphite upshifts, and within a few picoseconds relaxes to the stationary value. Our first-principles density functional calculations demonstrate that the phonon stiffening stems from the light-induced decoupling of the non-adiabatic electron-phonon interaction by creating the non-equilibrium electron-hole plasma. Time-resolved vibrational spectroscopy provides a window on the ultrafast non-equilibrium electron dynamics. △ Less

Submitted 12 December, 2007; originally announced December 2007.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 77, 121402(R) (2008)