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Self-consistent quasi-particle $GW$ and hybrid functional calculations for Al/InAs/Al heterojunctions: band offset and spin-orbit coupling effects
Authors:
H. Ness,
F. Corsetti,
D. Pashov,
B. Verstichel,
G. W. Winkler,
M. van Schilfgaarde,
R. M. Lutchyn
Abstract:
The electronic structure of surfaces and interfaces plays a key role in the properties of quantum devices. Here, we study the electronic structure of realistic Al/InAs/Al heterojunctions using a combination of density functional theory (DFT) with hybrid functionals and state-of-the-art quasi-particle $GW$ (QS$GW$) calculations. We find a good agreement between QS$GW$ calculations and hybrid functi…
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The electronic structure of surfaces and interfaces plays a key role in the properties of quantum devices. Here, we study the electronic structure of realistic Al/InAs/Al heterojunctions using a combination of density functional theory (DFT) with hybrid functionals and state-of-the-art quasi-particle $GW$ (QS$GW$) calculations. We find a good agreement between QS$GW$ calculations and hybrid functional calculations which themselves compare favourably well with ARPES experiments. Our study confirm the need of well controlled quality of the interfaces to obtain the needed properties of InAs/Al heterojunctions. A detailed analysis of the effects of spin-orbit coupling on the spin-splitting of the electronic states show a linear scaling in $k$-space, related to the two-dimensional nature of some interface states. The good agreement by QS$GW$ and hybrid functional calculations open the door towards trust-able use of an effective approximation to QS$GW$ for studying very large heterojunctions.
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Submitted 20 May, 2024; v1 submitted 26 March, 2024;
originally announced March 2024.
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Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Authors:
Morteza Aghaee,
Alejandro Alcaraz Ramirez,
Zulfi Alam,
Rizwan Ali,
Mariusz Andrzejczuk,
Andrey Antipov,
Mikhail Astafev,
Amin Barzegar,
Bela Bauer,
Jonathan Becker,
Umesh Kumar Bhaskar,
Alex Bocharov,
Srini Boddapati,
David Bohn,
Jouri Bommer,
Leo Bourdet,
Arnaud Bousquet,
Samuel Boutin,
Lucas Casparis,
Benjamin James Chapman,
Sohail Chatoor,
Anna Wulff Christensen,
Cassandra Chua,
Patrick Codd,
William Cole
, et al. (137 additional authors not shown)
Abstract:
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostruct…
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The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $μ$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $μ$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%.
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Submitted 2 April, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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Few-mode to mesoscopic junctions in gatemon qubits
Authors:
Alisa Danilenko,
Deividas Sabonis,
Georg W. Winkler,
Oscar Erlandsson,
Peter Krogstrup,
Charles M. Marcus
Abstract:
We investigate a semiconductor nanowire-based gatemon qubit with epitaxial Al on two facets of the nanowire, allowing gate control of wire density. Two segments have the Al removed, one forming a Josephson junction and the other operating as a transistor, providing in-situ switching between dc transport and qubit operation. Gating the NW changes the bulk wire potential distribution, while gating t…
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We investigate a semiconductor nanowire-based gatemon qubit with epitaxial Al on two facets of the nanowire, allowing gate control of wire density. Two segments have the Al removed, one forming a Josephson junction and the other operating as a transistor, providing in-situ switching between dc transport and qubit operation. Gating the NW changes the bulk wire potential distribution, while gating the Josephson junction changes the number of junction modes. Both effects are revealed by the dependence of qubit frequency on parallel magnetic field. A detailed model of the wire and junction yields behavior consistent with experiment. In the multi-mode regime, fluctuations in qubit frequency are considerably smaller than the theoretical "universal" value, also smaller than numerics, and consistent with previous measurements of fluctuating critical current.
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Submitted 8 September, 2022;
originally announced September 2022.
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InAs-Al Hybrid Devices Passing the Topological Gap Protocol
Authors:
Morteza Aghaee,
Arun Akkala,
Zulfi Alam,
Rizwan Ali,
Alejandro Alcaraz Ramirez,
Mariusz Andrzejczuk,
Andrey E Antipov,
Pavel Aseev,
Mikhail Astafev,
Bela Bauer,
Jonathan Becker,
Srini Boddapati,
Frenk Boekhout,
Jouri Bommer,
Esben Bork Hansen,
Tom Bosma,
Leo Bourdet,
Samuel Boutin,
Philippe Caroff,
Lucas Casparis,
Maja Cassidy,
Anna Wulf Christensen,
Noah Clay,
William S Cole,
Fabiano Corsetti
, et al. (102 additional authors not shown)
Abstract:
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-loca…
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We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin et al. [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at both ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-60 $μ$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes.
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Submitted 8 March, 2024; v1 submitted 6 July, 2022;
originally announced July 2022.
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Protocol to identify a topological superconducting phase in a three-terminal device
Authors:
Dmitry I. Pikulin,
Bernard van Heck,
Torsten Karzig,
Esteban A. Martinez,
Bas Nijholt,
Tom Laeven,
Georg W. Winkler,
John D. Watson,
Sebastian Heedt,
Mine Temurhan,
Vicky Svidenko,
Roman M. Lutchyn,
Mason Thomas,
Gijs de Lange,
Lucas Casparis,
Chetan Nayak
Abstract:
We develop a protocol to determine the presence and extent of a topological phase with Majorana zero modes in a hybrid superconductor-semiconductor device. The protocol is based on conductance measurements in a three-terminal device with two normal leads and one superconducting lead. A radio-frequency technique acts as a proxy for the measurement of local conductance, allowing a rapid, systematic…
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We develop a protocol to determine the presence and extent of a topological phase with Majorana zero modes in a hybrid superconductor-semiconductor device. The protocol is based on conductance measurements in a three-terminal device with two normal leads and one superconducting lead. A radio-frequency technique acts as a proxy for the measurement of local conductance, allowing a rapid, systematic scan of the large experimental phase space of the device. Majorana zero modes cause zero bias conductance peaks at each end of the wire, so we identify promising regions of the phase space by filtering for this condition. To validate the presence of a topological phase, a subsequent measurement of the non-local conductance in these regions is used to detect a topological transition via the closing and reopening of the bulk energy gap. We define data analysis routines that allow for an automated and unbiased execution of the protocol. Our protocol is designed to screen out false positives, especially trivial Andreev bound states that mimic Majorana zero modes in local conductance. We apply the protocol to several examples of simulated data illustrating the detection of topological phases and the screening of false positives.
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Submitted 22 March, 2021;
originally announced March 2021.
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First principles feasibility assessment of a topological insulator at the InAs/GaSb interface
Authors:
Shuyang Yang,
Derek Dardzinski,
Andrea Hwang,
Dmitry I. Pikulin,
Georg W. Winkler,
Noa Marom
Abstract:
First principles simulations are conducted to shed light on the question of whether a two-dimensional topological insulator (2DTI) phase may be obtained at the interface between InAs and GaSb. To this end, the InAs/GaSb interface is compared and contrasted with the HgTe/CdTe interface. Density functional theory (DFT) simulations of these interfaces are performed using a machine-learned Hubbard U c…
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First principles simulations are conducted to shed light on the question of whether a two-dimensional topological insulator (2DTI) phase may be obtained at the interface between InAs and GaSb. To this end, the InAs/GaSb interface is compared and contrasted with the HgTe/CdTe interface. Density functional theory (DFT) simulations of these interfaces are performed using a machine-learned Hubbard U correction [npj Comput. Mater. 6, 180 (2020)]. For the HgTe/CdTe interface our simulations show that band crossing is achieved and an inverted gap is obtained at a critical thickness of 5.1 nm of HgTe, in agreement with experiment and previous DFT calculations. In contrast, for InAs/GaSb the gap narrows with increasing thickness of InAs; however the gap does not close for interfaces with up to 50 layers (about 15 nm) of each material. When an external electric field is applied across the InAs/GaSb interface, the GaSb-derived valence band maximum is shifted up in energy with respect to the InAs-derived conduction band minimum until eventually the bands cross and an inverted gap opens. Our results show that it may be possible to reach the topological regime at the InAs/GaSb interface under the right conditions. However, it may be challenging to realize these conditions experimentally, which explains the difficulty of experimentally demonstrating an inverted gap in InAs/GaSb.
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Submitted 19 January, 2021;
originally announced January 2021.
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Full parity phase diagram of a proximitized nanowire island
Authors:
J. Shen,
G. W. Winkler,
F. Borsoi,
S. Heedt,
V. Levajac,
J. Y. Wang,
D. van Driel,
D. Bouman,
S. Gazibegovic,
R. L. M. Op Het Veld,
D. Car,
J. A. Logan,
M. Pendharkar,
C. J. Palmstrom,
E. P. A. M. Bakkers,
L. P. Kouwenhoven,
B. van Heck
Abstract:
We measure the charge periodicity of Coulomb blockade conductance oscillations of a hybrid InSb-Al island as a function of gate voltage and parallel magnetic field. The periodicity changes from $2e$ to $1e$ at a gate-dependent value of the magnetic field, $B^*$, decreasing from a high to a low limit upon increasing the gate voltage. In the gate voltage region between the two limits, which our nume…
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We measure the charge periodicity of Coulomb blockade conductance oscillations of a hybrid InSb-Al island as a function of gate voltage and parallel magnetic field. The periodicity changes from $2e$ to $1e$ at a gate-dependent value of the magnetic field, $B^*$, decreasing from a high to a low limit upon increasing the gate voltage. In the gate voltage region between the two limits, which our numerical simulations indicate to be the most promising for locating Majorana zero modes, we observe correlated oscillations of peak spacings and heights. For positive gate voltages, the $2e$-$1e$ transition with low $B^*$ is due to the presence of non-topological states whose energy quickly disperses below the charging energy due to the orbital effect of the magnetic field. Our measurements demonstrate the importance of a careful exploration of the entire available phase space of a proximitized nanowire as a prerequisite to define future topological qubits.
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Submitted 3 August, 2021; v1 submitted 18 December, 2020;
originally announced December 2020.
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Andreev Modes from Phase Winding in a Full-shell Nanowire-based Transmon
Authors:
A. Kringhøj,
G. W. Winkler,
T. W. Larsen,
D. Sabonis,
O. Erlandsson,
P. Krogstrup,
B. van Heck,
K. D. Petersson,
C. M. Marcus
Abstract:
We investigate transmon qubits made from semiconductor nanowires with a fully surrounding superconducting shell. In the regime of reentrant superconductivity associated with the destructive Little-Parks effect, numerous coherent transitions are observed in the first reentrant lobe, where the shell carries 2π winding of superconducting phase, and are absent in the zeroth lobe. As junction density w…
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We investigate transmon qubits made from semiconductor nanowires with a fully surrounding superconducting shell. In the regime of reentrant superconductivity associated with the destructive Little-Parks effect, numerous coherent transitions are observed in the first reentrant lobe, where the shell carries 2π winding of superconducting phase, and are absent in the zeroth lobe. As junction density was increased by gate voltage, qubit coherence was suppressed then lost in the first lobe. These observations and numerical simulations highlight the role of winding-induced Andreev states in the junction.
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Submitted 23 August, 2020;
originally announced August 2020.
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Flux-induced topological superconductivity in full-shell nanowires
Authors:
S. Vaitiekėnas,
G. W. Winkler,
B. van Heck,
T. Karzig,
M. -T. Deng,
K. Flensberg,
L. I. Glazman,
C. Nayak,
P. Krogstrup,
R. M. Lutchyn,
C. M. Marcus
Abstract:
We present a novel route to realizing topological superconductivity using magnetic flux applied to a full superconducting shell surrounding a semiconducting nanowire core. In the destructive Little-Parks regime, reentrant regions of superconductivity are associated with integer number of phase windings in the shell. Tunneling into the core reveals a hard induced gap near zero applied flux, corresp…
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We present a novel route to realizing topological superconductivity using magnetic flux applied to a full superconducting shell surrounding a semiconducting nanowire core. In the destructive Little-Parks regime, reentrant regions of superconductivity are associated with integer number of phase windings in the shell. Tunneling into the core reveals a hard induced gap near zero applied flux, corresponding to zero phase winding, and a gapped region with a discrete zero-energy state around one applied flux quantum, Φ_0 = h/2e, corresponding to 2π phase winding. Theoretical analysis indicates that in the presence of radial spin-orbit coupling in the semiconductor, the winding of the superconducting phase can induce a transition to a topological phase supporting Majorana zero modes. Realistic modeling shows a topological phase persisting over a wide range of parameters, and reproduces experimental tunneling conductance data. Further measurements of Coulomb blockade peak spacing around one flux quantum in full-shell nanowire islands shows exponentially decreasing deviation from 1e periodicity with device length, consistent with Majorana modes at the ends of the nanowire.
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Submitted 29 March, 2020;
originally announced March 2020.
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Topology of Triple-Point Metals
Authors:
Georg W. Winkler,
Sobhit Singh,
Alexey A. Soluyanov
Abstract:
We discuss and illustrate the appearance of topological fermions and bosons in triple-point metals, where a band crossing of three electronic bands occurs close to the Fermi level. Topological bosons appear in the phonon spectrum of certain triple-point metals, depending on the mass of atoms that form the binary triple-point metal. We first provide a classification of possible triple-point electro…
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We discuss and illustrate the appearance of topological fermions and bosons in triple-point metals, where a band crossing of three electronic bands occurs close to the Fermi level. Topological bosons appear in the phonon spectrum of certain triple-point metals, depending on the mass of atoms that form the binary triple-point metal. We first provide a classification of possible triple-point electronic topological phases possible in crystalline compounds and discuss the consequences of these topological phases, seen in Fermi arcs, topological Lifshitz transitions and transport anomalies. Then we show how the topological phase of phonon modes can be extracted and proven for relevant compounds. Finally, we show how the interplay of electronic and phononic topologies in triple-point metals puts these \textit{metallic} materials into the list of the most efficient \textit{metallic} thermoelectrics known to date.
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Submitted 28 February, 2019;
originally announced March 2019.
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A unified numerical approach to semiconductor-superconductor heterostructures
Authors:
Georg W. Winkler,
Andrey E. Antipov,
Bernard van Heck,
Alexey A. Soluyanov,
Leonid I. Glazman,
Michael Wimmer,
Roman M. Lutchyn
Abstract:
We develop a unified numerical approach for modeling semiconductor-superconductor heterostructures. Our approach takes into account on equal footing important key ingredients: proximity-induced superconductivity, orbital and Zeeman effect of an applied magnetic field, spin-orbit coupling as well as the electrostatic environment. As a model system, we consider indium arsenide (InAs) nanowires with…
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We develop a unified numerical approach for modeling semiconductor-superconductor heterostructures. Our approach takes into account on equal footing important key ingredients: proximity-induced superconductivity, orbital and Zeeman effect of an applied magnetic field, spin-orbit coupling as well as the electrostatic environment. As a model system, we consider indium arsenide (InAs) nanowires with epitaxial aluminum (Al) shell and demonstrate qualitative agreement of the obtained results with the existing experimental data. Finally, we characterize the topological superconducting phase emerging in a finite magnetic field and calculate the corresponding topological phase diagram.
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Submitted 8 July, 2019; v1 submitted 9 October, 2018;
originally announced October 2018.
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Topological superconductivity in full shell proximitized nanowires
Authors:
Roman M. Lutchyn,
Georg W. Winkler,
Bernard van Heck,
Torsten Karzig,
Karsten Flensberg,
Leonid I. Glazman,
Chetan Nayak
Abstract:
We consider a new model system supporting Majorana zero modes based on semiconductor nanowires with a full superconducting shell. We demonstrate that, in the presence of spin-orbit coupling in the semiconductor induced by a radial electric field, the winding of the superconducting order parameter leads to a topological phase supporting Majorana zero modes. The topological phase persists over a lar…
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We consider a new model system supporting Majorana zero modes based on semiconductor nanowires with a full superconducting shell. We demonstrate that, in the presence of spin-orbit coupling in the semiconductor induced by a radial electric field, the winding of the superconducting order parameter leads to a topological phase supporting Majorana zero modes. The topological phase persists over a large range of chemical potentials and can be induced by a predictable and weak magnetic field piercing the cylinder. The system can be readily realized in semiconductor nanowires covered by a full superconducting shell, opening a pathway for realizing topological quantum computing proposals.
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Submitted 14 September, 2018;
originally announced September 2018.
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Electric field tunable superconductor-semiconductor coupling in Majorana nanowires
Authors:
Michiel W. A. de Moor,
Jouri D. S. Bommer,
Di Xu,
Georg W. Winkler,
Andrey E. Antipov,
Arno Bargerbos,
Guanzhong Wang,
Nick van Loo,
Roy L. M. Op het Veld,
Sasa Gazibegovic,
Diana Car,
John A. Logan,
Mihir Pendharkar,
Joon Sue Lee,
Erik P. A. M. Bakkers,
Chris J. Palmstrøm,
Roman M. Lutchyn,
Leo P. Kouwenhoven,
Hao Zhang
Abstract:
We study the effect of external electric fields on superconductor-semiconductor coupling by measuring the electron transport in InSb semiconductor nanowires coupled to an epitaxially grown Al superconductor. We find that the gate voltage induced electric fields can greatly modify the coupling strength, which has consequences for the proximity induced superconducting gap, effective g-factor, and sp…
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We study the effect of external electric fields on superconductor-semiconductor coupling by measuring the electron transport in InSb semiconductor nanowires coupled to an epitaxially grown Al superconductor. We find that the gate voltage induced electric fields can greatly modify the coupling strength, which has consequences for the proximity induced superconducting gap, effective g-factor, and spin-orbit coupling, which all play a key role in understanding Majorana physics. We further show that level repulsion due to spin-orbit coupling in a finite size system can lead to seemingly stable zero bias conductance peaks, which mimic the behavior of Majorana zero modes. Our results improve the understanding of realistic Majorana nanowire systems.
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Submitted 4 June, 2018;
originally announced June 2018.
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Automated construction of symmetrized Wannier-like tight-binding models from ab initio calculations
Authors:
Dominik Gresch,
QuanSheng Wu,
Georg W. Winkler,
Rico Häuselmann,
Matthias Troyer,
Alexey A. Soluyanov
Abstract:
Wannier tight-binding models are effective models constructed from first-principles calculations. As such, they bridge a gap between the accuracy of first-principles calculations and the computational simplicity of effective models. In this work, we extend the existing methodology of creating Wannier tight-binding models from first-principles calculations by introducing the symmetrization post-pro…
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Wannier tight-binding models are effective models constructed from first-principles calculations. As such, they bridge a gap between the accuracy of first-principles calculations and the computational simplicity of effective models. In this work, we extend the existing methodology of creating Wannier tight-binding models from first-principles calculations by introducing the symmetrization post-processing step, which enables the production of Wannier-like models that respect the symmetries of the considered crystal. Furthermore, we implement automatic workflows, which allow for producing a large number of tight-binding models for large classes of chemically and structurally similar compounds, or materials subject to external influence such as strain. As a particular illustration, these workflows are applied to strained III-V semiconductor materials. These results can be used for further study of topological phase transitions in III-V quantum wells.
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Submitted 5 October, 2018; v1 submitted 30 May, 2018;
originally announced May 2018.
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Effects of gate-induced electric fields on semiconductor Majorana nanowires
Authors:
Andrey E. Antipov,
Arno Bargerbos,
Georg W. Winkler,
Bela Bauer,
Enrico Rossi,
Roman M. Lutchyn
Abstract:
We study the effect of gate-induced electric fields on the properties of semiconductor-superconductor hybrid nanowires which represent a promising platform for realizing topological superconductivity and Majorana zero modes. Using a self-consistent Schrödinger-Poisson approach that describes the semiconductor and the superconductor on equal footing, we are able to access the strong tunneling regim…
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We study the effect of gate-induced electric fields on the properties of semiconductor-superconductor hybrid nanowires which represent a promising platform for realizing topological superconductivity and Majorana zero modes. Using a self-consistent Schrödinger-Poisson approach that describes the semiconductor and the superconductor on equal footing, we are able to access the strong tunneling regime and identify the impact of an applied gate voltage on the coupling between semiconductor and superconductor. We discuss how physical parameters such as the induced superconducting gap and Landé g-factor in the semiconductor are modified by redistributing the density of states across the interface upon application of an external gate voltage. Finally, we map out the topological phase diagram as a function of magnetic field and gate voltage for InAs/Al nanowires.
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Submitted 13 August, 2018; v1 submitted 8 January, 2018;
originally announced January 2018.
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Orbital contributions to the electron g-factor in semiconductor nanowires
Authors:
Georg W. Winkler,
Dániel Varjas,
Rafal Skolasinski,
Alexey A. Soluyanov,
Matthias Troyer,
Michael Wimmer
Abstract:
Recent experiments on Majorana fermions in semiconductor nanowires [Albrecht et al., Nat. 531, 206 (2016)] revealed a surprisingly large electronic Landé g-factor, several times larger than the bulk value - contrary to the expectation that confinement reduces the g-factor. Here we assess the role of orbital contributions to the electron g-factor in nanowires and quantum dots. We show that an LS co…
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Recent experiments on Majorana fermions in semiconductor nanowires [Albrecht et al., Nat. 531, 206 (2016)] revealed a surprisingly large electronic Landé g-factor, several times larger than the bulk value - contrary to the expectation that confinement reduces the g-factor. Here we assess the role of orbital contributions to the electron g-factor in nanowires and quantum dots. We show that an LS coupling in higher subbands leads to an enhancement of the g-factor of an order of magnitude or more for small effective mass semiconductors. We validate our theoretical finding with simulations of InAs and InSb, showing that the effect persists even if cylindrical symmetry is broken. A huge anisotropy of the enhanced g-factors under magnetic field rotation allows for a straightforward experimental test of this theory.
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Submitted 9 June, 2017; v1 submitted 29 March, 2017;
originally announced March 2017.
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Interaction effects in a microscopic quantum wire model with strong spin-orbit interaction
Authors:
Georg W. Winkler,
Martin Ganahl,
Dirk Schuricht,
Hans Gerd Evertz,
Sabine Andergassen
Abstract:
We investigate the effect of strong interactions on the spectral properties of quantum wires with strong Rashba spin-orbit interaction in a magnetic field, using a combination of Matrix Product State and bosonization techniques. Quantum wires with strong Rashba spin-orbit interaction and magnetic field exhibit a partial gap in one-half of the conducting modes. Such systems have attracted wide-spre…
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We investigate the effect of strong interactions on the spectral properties of quantum wires with strong Rashba spin-orbit interaction in a magnetic field, using a combination of Matrix Product State and bosonization techniques. Quantum wires with strong Rashba spin-orbit interaction and magnetic field exhibit a partial gap in one-half of the conducting modes. Such systems have attracted wide-spread experimental and theoretical attention due to their unusual physical properties, among which are spin-dependent transport, or a topological superconducting phase when under the proximity effect of an s-wave superconductor. As a microscopic model for the quantum wire we study an extended Hubbard model with spin-orbit interaction and Zeeman field. We obtain spin resolved spectral densities from the real-time evolution of excitations, and calculate the phase diagram. We find that interactions increase the pseudo gap at $k = 0$ and thus also enhance the Majorana-supporting phase and stabilize the helical spin order. Furthermore, we calculate the optical conductivity and compare it with the low energy spiral Luttinger Liquid result, obtained from field theoretical calculations. With interactions, the optical conductivity is dominated by an excotic excitation of a bound soliton-antisoliton pair known as a breather state. We visualize the oscillating motion of the breather state, which could provide the route to their experimental detection in e.g. cold atom experiments.
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Submitted 9 April, 2017; v1 submitted 13 January, 2017;
originally announced January 2017.
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Hidden Weyl Points in Centrosymmetric Paramagnetic Metals
Authors:
Dominik Gresch,
QuanSheng Wu,
Georg W. Winkler,
Alexey A. Soluyanov
Abstract:
The transition metal dipnictides TaAs2 , TaSb2 , NbAs2 and NbSb2 have recently sparked interest for exhibiting giant magnetoresistance. While the exact nature of magnetoresistance in these materials is still under active investigation, there are experimental results indicating anisotropic negative magnetoresistance. We study the effect of magnetic field on the band structure topology of these mate…
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The transition metal dipnictides TaAs2 , TaSb2 , NbAs2 and NbSb2 have recently sparked interest for exhibiting giant magnetoresistance. While the exact nature of magnetoresistance in these materials is still under active investigation, there are experimental results indicating anisotropic negative magnetoresistance. We study the effect of magnetic field on the band structure topology of these materials by applying a Zeeman splitting. In the absence of magnetic field, we find that the materials are weak topological insulators, which is in agreement with previous studies. When the magnetic field is applied, we find that type-II Weyl points form. This result is found first from a symmetry argument, and then numerically for a k.p model of TaAs2 and a tight-binding model of NbSb2. This effect can be of help in search for an explanation of the anomalous magnetoresistance in these materials.
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Submitted 19 January, 2017; v1 submitted 6 November, 2016;
originally announced November 2016.
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Triple Point Topological Metals
Authors:
Ziming Zhu,
Georg W. Winkler,
QuanSheng Wu,
Ju Li,
Alexey A. Soluyanov
Abstract:
Topologically protected fermionic quasiparticles appear in metals, where band degeneracies occur at the Fermi level, dictated by the band structure topology. While in some metals these quasiparticles are direct analogues of elementary fermionic particles of the relativistic quantum field theory, other metals can have symmetries that give rise to quasiparticles, fundamentally different from those k…
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Topologically protected fermionic quasiparticles appear in metals, where band degeneracies occur at the Fermi level, dictated by the band structure topology. While in some metals these quasiparticles are direct analogues of elementary fermionic particles of the relativistic quantum field theory, other metals can have symmetries that give rise to quasiparticles, fundamentally different from those known in high-energy physics. Here we report on a new type of topological quasiparticles -- triple point fermions -- realized in metals with symmorphic crystal structure, which host crossings of three bands in the vicinity of the Fermi level protected by point group symmetries. We find two topologically different types of triple point fermions, both distinct from any other topological quasiparticles reported to date. We provide examples of existing materials that host triple point fermions of both types, and discuss a variety of physical phenomena associated with these quasiparticles, such as the occurrence of topological surface Fermi arcs, transport anomalies and topological Lifshitz transitions.
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Submitted 10 June, 2016; v1 submitted 16 May, 2016;
originally announced May 2016.
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Topological Phases in InAs$_{1-x}$Sb$_x$: From Novel Topological Semimetal to Majorana Wire
Authors:
Georg W. Winkler,
QuanSheng Wu,
Matthias Troyer,
Peter Krogstrup,
Alexey A. Soluyanov
Abstract:
Superconductor proximitized one-dimensional semiconductor nanowires with strong spin-orbit interaction (SOI) are at this time the most promising candidates for the realization of topological quantum information processing. In current experiments the SOI originates predominantly from extrinsic fields, induced by finite size effects and applied gate voltages. The dependence of the topological transi…
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Superconductor proximitized one-dimensional semiconductor nanowires with strong spin-orbit interaction (SOI) are at this time the most promising candidates for the realization of topological quantum information processing. In current experiments the SOI originates predominantly from extrinsic fields, induced by finite size effects and applied gate voltages. The dependence of the topological transition in these devices on microscopic details makes scaling to a large number of devices difficult unless a material with dominant intrinsic bulk SOI is used. Here we show that wires made of certain ordered alloys InAs$_{1-x}$Sb$_x$ have spin-splittings up to 20 times larger than those reached in pristine InSb wires. In particular, we show this for a stable ordered CuPt-structure at $x = 0.5$, which has an inverted band ordering and realizes a novel type of a topological semimetal with triple degeneracy points in the bulk spectrum that produce topological surface Fermi arcs. Experimentally achievable strains can drive this compound either into a topological insulator phase, or restore the normal band ordering making the CuPt-ordered InAs$_{0.5}$Sb$_{0.5}$ a semiconductor with a large intrinsic linear in $k$ bulk spin splitting.
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Submitted 18 July, 2016; v1 submitted 22 February, 2016;
originally announced February 2016.
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Smooth gauge and Wannier functions for topological band structures in arbitrary dimensions
Authors:
Georg W. Winkler,
Alexey A. Soluyanov,
Matthias Troyer
Abstract:
The construction of exponentially localized Wannier functions for a set of bands requires a choice of Bloch-like functions that span the space of the bands in question, and are smooth and periodic functions of k in the entire Brillouin zone. For bands with nontrivial topology, such smooth Bloch functions can only be chosen such that they do not respect the symmetries that protect the topology. Thi…
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The construction of exponentially localized Wannier functions for a set of bands requires a choice of Bloch-like functions that span the space of the bands in question, and are smooth and periodic functions of k in the entire Brillouin zone. For bands with nontrivial topology, such smooth Bloch functions can only be chosen such that they do not respect the symmetries that protect the topology. This symmetry breaking is a necessary, but not sufficient condition for smoothness, and, in general, finding smooth Bloch functions for topological bands is a complicated task. We present a generic technique for finding smooth Bloch functions and constructing exponentially localized Wannier functions in the presence of nontrivial topology, given that the net Chern number of the bands in question vanishes. The technique is verified against known results in the Kane-Mele model. It is then applied to the topological insulator Bi2Se3, where the topological state is protected by two symmetries: time reversal and inversion. The resultant exponentially localized Wannier functions break both these symmetries. Finally, we illustrate how the calculation of the Chern-Simons orbital magnetoelectric response is facilitated by the proposed smooth gauge construction.
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Submitted 29 January, 2016; v1 submitted 21 September, 2015;
originally announced September 2015.
