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Kinetic inductance traveling wave amplifier designs for practical microwave readout applications
Authors:
A. Giachero,
M. Visser,
J. Wheeler,
L. Howe,
J. Gao,
J. Austermann,
J. Hubmayr,
A. Nucciotti,
J. Ullom
Abstract:
A Kinetic Inductance Traveling Wave amplifier (KIT) utilizes the nonlinear kinetic inductance of superconducting films, particularly Niobium Titanium Nitride (NbTiN), for parametric amplification. These amplifiers achieve remarkable performance in terms of gain, bandwidth, compression power, and frequently approach the quantum limit for noise. However, most KIT demonstrations have been isolated fr…
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A Kinetic Inductance Traveling Wave amplifier (KIT) utilizes the nonlinear kinetic inductance of superconducting films, particularly Niobium Titanium Nitride (NbTiN), for parametric amplification. These amplifiers achieve remarkable performance in terms of gain, bandwidth, compression power, and frequently approach the quantum limit for noise. However, most KIT demonstrations have been isolated from practical device readout systems. Using a KIT as the first amplifier in the readout chain of an unoptimized microwave SQUID multiplexer coupled to a transition-edge sensor microcalorimeter we see an initial improvement in the flux noise. One challenge in KIT integration is the considerable microwave pump power required to drive the non-linearity. To address this, we have initiated efforts to reduce the pump power by using thinner NbTiN films and an inverted microstrip transmission line design. In this article, we present the new transmission line design, fabrication procedure, and initial device characterization -- including gain and added noise. These devices exhibit over 10 dB of gain with a 3 dB bandwidth of approximately 5.5-7.25 GHz, a maximum practical gain of 12 dB and typical gain ripple under 4 dB peak-to-peak. We observe an appreciable impedance mismatch in the NbTiN transmission line, which is likely the source of the majority of the gain ripple. Finally we perform an initial noise characterization and demonstrate system-added noise of three quanta or less over nearly the entire 3 dB bandwidth.
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Submitted 20 March, 2024; v1 submitted 17 March, 2024;
originally announced March 2024.
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Characterization of NbTiN films with thicknesses below 20 nm for low power kinetic inductance amplifiers
Authors:
A. Giachero,
M. R. Vissers,
J. D. Wheeler,
M. Malnou,
J. E. Austermann,
J. Hubmayr,
A. Nucciotti,
J. N. Ullom,
J. Gao
Abstract:
A quantum-limited amplification chain is a fundamental advantage for any application that may benefit from the detection of very faint signals. Reading out arrays of superconducting detectors (TESs or MKIDs), resonant cavities, or qubits, calls for large bandwidth amplifiers in addition to having the lowest possible noise. At millikelvin temperatures, Kinetic Inductance Traveling-Wave Parametric A…
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A quantum-limited amplification chain is a fundamental advantage for any application that may benefit from the detection of very faint signals. Reading out arrays of superconducting detectors (TESs or MKIDs), resonant cavities, or qubits, calls for large bandwidth amplifiers in addition to having the lowest possible noise. At millikelvin temperatures, Kinetic Inductance Traveling-Wave Parametric Amplifiers (KI-TWPAs) working in 3-wave-mixing (3WM) and fabricated from a 20 nm thick NbTiN film have shown promising noise performances, as they can operate close to the quantum limit. However, they still require fairly high pump power. Devices that would require lower pump power would be easier to implement in readout chains, could reach the quantum limit and they would be compatible with qubit readout. A possible solution for obtaining this optimal configuration is to use a thinner superconducting film. In this work we explore the properties of NbTiN films with a thickness less than 20 nm and we report the obtained experimental characterizations in terms of critical temperature, normal resistivity, and kinetic inductance. A new design for a 3WM KI-TWPA amplifier, based on these developed superconducting films, is introduced and discussed.
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Submitted 18 February, 2024;
originally announced February 2024.
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In situ micropillar compression of an anisotropic metal-organic framework single crystal
Authors:
Zhixin Zeng,
Yuan Xiao,
Jeffrey M. Wheeler,
**-Chong Tan
Abstract:
Understanding of the complex mechanical behavior of metal-organic frameworks (MOF) beyond their elastic limit will allow the design of real-world applications in chemical engineering, optoelectronics, energy conversion apparatus, and sensing devices. Through in situ compression of micropillars, the uniaxial stress-strain curves of a copper paddlewheel MOF (HKUST-1) were determined along two unique…
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Understanding of the complex mechanical behavior of metal-organic frameworks (MOF) beyond their elastic limit will allow the design of real-world applications in chemical engineering, optoelectronics, energy conversion apparatus, and sensing devices. Through in situ compression of micropillars, the uniaxial stress-strain curves of a copper paddlewheel MOF (HKUST-1) were determined along two unique crystallographic directions, namely the (100) and (111) facets. We show strongly anisotropic elastic response where the ratio of the Young's moduli are E(111) ~ 3.6 x E(100), followed by extensive plastic flows. Likewise, the yield strengths are considerably different, in which Y(111) ~ 2 x Y(100) because of the underlying framework anisotropy. We measure the fracture toughness using micropillar splitting. While in situ tests revealed differential cracking behavior, the resultant toughness values of the two facets are comparable, yielding Kc ~ 0.5 MPa m^1/2. This work provides new insights of porous framework ductility at the micron scale and failure by bonds breakage.
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Submitted 22 October, 2022;
originally announced October 2022.
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Sub-Kelvin Thermometer for On-Chip Measurements of Microwave Devices Utilizing Two-Level Systems in Superconducting Microresonators
Authors:
J. Wheeler,
M. R. Vissers,
M. Malnou,
J. Hubmayr,
J. N. Ullom,
J. Gao
Abstract:
We present a superconducting microresonator thermometer based on two-level systems (TLS) that is drop-in compatible with cryogenic microwave systems. The operational temperature range is 50-1000~mK (which may be extended to 5~mK), and the sensitivity (50-75~$μ$K/$\sqrt{\mathrm{Hz}}$) is relatively uniform across this range. The miniature footprint that conveniently attaches to the feedline of a cr…
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We present a superconducting microresonator thermometer based on two-level systems (TLS) that is drop-in compatible with cryogenic microwave systems. The operational temperature range is 50-1000~mK (which may be extended to 5~mK), and the sensitivity (50-75~$μ$K/$\sqrt{\mathrm{Hz}}$) is relatively uniform across this range. The miniature footprint that conveniently attaches to the feedline of a cryogenic microwave device facilitates the measurement of on-chip device temperature and requires no additional thermometry wiring or readout electronics. We demonstrate the practical use of these TLS thermometers to investigate static and transient chip heating in a kinetic inductance traveling-wave parametric amplifier operated with a strong pump tone. TLS thermometry may find broad application in cryogenic microwave devices such as superconducting qubits and detectors.
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Submitted 13 November, 2020;
originally announced November 2020.
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Metals by micro-scale additive manufacturing: comparison of microstructure and mechanical properties
Authors:
Alain Reiser,
Lukas Koch,
Kathleen A. Dunn,
Toshiki Matsuura,
Futoshi Iwata,
Ofer Fogel,
Zvi Kotler,
Nanjia Zhou,
Kristin Charipar,
Alberto Piqué,
Patrik Rohner,
Dimos Poulikakos,
Sanghyeon Lee,
Seung K. Seol,
Ivo Utke,
Cathelijn van Nisselroy,
Tomaso Zambelli,
Jeffrey M. Wheeler,
Ralph Spolenak
Abstract:
Many emerging applications in microscale engineering rely on the fabrication of three-dimensional architectures in inorganic materials. Small-scale additive manufacturing (AM) aspires to provide flexible and facile access to these geometries. Yet, the synthesis of device-grade inorganic materials is still a key challenge towards the implementation of AM in microfabrication. Here, we present a comp…
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Many emerging applications in microscale engineering rely on the fabrication of three-dimensional architectures in inorganic materials. Small-scale additive manufacturing (AM) aspires to provide flexible and facile access to these geometries. Yet, the synthesis of device-grade inorganic materials is still a key challenge towards the implementation of AM in microfabrication. Here, we present a comprehensive overview of the microstructural and mechanical properties of metals fabricated by most state-of-the-art AM methods that offer a spatial resolution $\leq$10$μ$m. Standardized sets of samples were studied by cross-sectional electron microscopy, nanoindentation and microcompression. We show that current microscale AM techniques synthesize metals with a wide range of microstructures and elastic and plastic properties, including materials of dense and crystalline microstructure with excellent mechanical properties that compare well to those of thin-film nanocrystalline materials. The large variation in materials performance can be related to the individual microstructure, which in turn is coupled to the various physico-chemical principles exploited by the different printing methods. The study provides practical guidelines for users of small-scale additive methods and establishes a baseline for the future optimization of the properties of printed metallic objects $-$ a significant step towards the potential establishment of AM techniques in microfabrication.
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Submitted 7 December, 2019;
originally announced December 2019.
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Hydro-mechanical network modelling of particulate composites
Authors:
Ignatios Athanasiadis,
Simon J. Wheeler,
Peter Grassl
Abstract:
Differential shrinkage in particulate quasi-brittle materials causes microcracking which reduces durability in these materials by increasing their mass transport properties. A hydro-mechanical three-dimensional periodic network approach was used to investigate the influence of particle and specimen size on the specimen permeability. The particulate quasi-brittle materials studied here consist of s…
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Differential shrinkage in particulate quasi-brittle materials causes microcracking which reduces durability in these materials by increasing their mass transport properties. A hydro-mechanical three-dimensional periodic network approach was used to investigate the influence of particle and specimen size on the specimen permeability. The particulate quasi-brittle materials studied here consist of stiff elastic particles, and a softer matrix and interfacial transition zones between matrix and particles exhibiting nonlinear material responses. An incrementally applied uniform eigenstrain, along with a damage-plasticity constitutive model, are used to describe the shrinkage and cracking processes of the matrix and interfacial transition zones. The results showed that increasing particle diameter at constant volume fraction increases the crack widths and, therefore, permeability, which confirms previously obtained 2D modelling results. Furthermore, it was demonstrated that specimen thickness has, in comparison to the influence of particle size, a small influence on permeability increase due to microcracking.
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Submitted 12 October, 2017; v1 submitted 26 July, 2017;
originally announced July 2017.
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On a 2D hydro-mechanical lattice approach for modelling hydraulic fracture
Authors:
Peter Grassl,
Caroline Fahy,
Domenico Gallipoli,
Simon J. Wheeler
Abstract:
A 2D lattice approach to describe hydraulic fracturing is presented. The interaction of fluid pressure and mechanical response is described by Biot's theory. The lattice model is applied to the analysis of a thick-walled cylinder, for which an analytical solution for the elastic response is derived. The numerical results obtained with the lattice model agree well with the analytical solution. Furt…
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A 2D lattice approach to describe hydraulic fracturing is presented. The interaction of fluid pressure and mechanical response is described by Biot's theory. The lattice model is applied to the analysis of a thick-walled cylinder, for which an analytical solution for the elastic response is derived. The numerical results obtained with the lattice model agree well with the analytical solution. Furthermore, the coupled lattice approach is applied to the fracture analysis of the thick-walled cylinder. It is shown that the proposed lattice approach provides results that are independent of the mesh size. Moreover, a strong geometrical size effect on nominal strength is observed which lies between analytically derived lower and upper bounds. This size effect decreases with increasing Biot's coefficient.
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Submitted 1 December, 2014; v1 submitted 28 November, 2014;
originally announced November 2014.
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Enhanced noise at high bias in atomic-scale Au break junctions
Authors:
Ruoyu Chen,
Patrick J. Wheeler,
M. Di Ventra,
D. Natelson
Abstract:
Heating in nanoscale systems driven out of equilibrium is of fundamental importance, has ramifications for technological applications, and is a challenge to characterize experimentally. Prior experiments using nanoscale junctions have largely focused on heating of ionic degrees of freedom, while heating of the electrons has been mostly neglected. We report measurements in atomic-scale Au break jun…
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Heating in nanoscale systems driven out of equilibrium is of fundamental importance, has ramifications for technological applications, and is a challenge to characterize experimentally. Prior experiments using nanoscale junctions have largely focused on heating of ionic degrees of freedom, while heating of the electrons has been mostly neglected. We report measurements in atomic-scale Au break junctions, in which the bias-driven component of the current noise is used as a probe of the electronic distribution. At low biases ($<$ 150~mV) the noise is consistent with expectations of shot noise at a fixed electronic temperature. At higher biases, a nonlinear dependence of the noise power is observed. We consider candidate mechanisms for this increase, including flicker noise (due to ionic motion), heating of the bulk electrodes, nonequilibrium electron-phonon effects, and local heating of the electronic distribution im**ing on the ballistic junction. We find that flicker noise and bulk heating are quantitatively unlikely to explain the observations. We discuss the implications of these observations for other nanoscale systems, and experimental tests to distinguish vibrational and electron interaction mechanisms for the enhanced noise.
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Submitted 3 March, 2014; v1 submitted 27 June, 2013;
originally announced June 2013.
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Noise in electromigrated nanojunctions
Authors:
P. J. Wheeler,
Ruoyu Chen.,
D. Natelson
Abstract:
Noise measurements are a probe beyond simple electronic transport that can reveal additional information about electronic correlations and inelastic processes. Here we report noise measurements in individual electromigrated nanojunctions, examining the evolution from the many channel regime to the tunneling regime, using a radio frequency technique. While we generally observe the dependence of noi…
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Noise measurements are a probe beyond simple electronic transport that can reveal additional information about electronic correlations and inelastic processes. Here we report noise measurements in individual electromigrated nanojunctions, examining the evolution from the many channel regime to the tunneling regime, using a radio frequency technique. While we generally observe the dependence of noise on bias expected for shot noise, in approximately 12% of junction configurations we find discrete changes in the bias dependence at threshold values of the bias, consistent with electronic excitation of local vibrational modes. Moreover, with some regularity we find significant mesoscopic variation in the magnitude of the noise in particular junctions even with small changes in the accompanying conductance. In another $\sim$17% of junctions we observe pronounced asymmetries in the inferred noise magnitude as a function of bias polarity, suggesting that investigators should be concerned about current-driven ionic motion in the electrodes even at biases well below those used for deliberate electromigration.
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Submitted 17 March, 2013;
originally announced March 2013.
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Shot noise suppression at room temperature in atomic-scale Au junctions
Authors:
P. J. Wheeler,
J. N. Russom,
K. Evans,
N. S. King,
D. Natelson
Abstract:
Shot noise encodes additional information not directly inferable from simple electronic transport measurements. Previous measurements in atomic-scale metal junctions at cryogenic temperatures have shown suppression of the shot noise at particular conductance values. This suppression demonstrates that transport in these structures proceeds via discrete quantum channels. Using a high frequency te…
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Shot noise encodes additional information not directly inferable from simple electronic transport measurements. Previous measurements in atomic-scale metal junctions at cryogenic temperatures have shown suppression of the shot noise at particular conductance values. This suppression demonstrates that transport in these structures proceeds via discrete quantum channels. Using a high frequency technique, we simultaneously acquire noise data and conductance histograms in Au junctions at room temperature and ambient conditions. We observe noise suppression at up to three conductance quanta, with possible indications of current-induced local heating and $1/f$ noise in the contact region at high biases. These measurements demonstrate the quantum character of transport at room temperature at the atomic scale. This technique provides an additional tool for studying dissipation and correlations in nanodevices.
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Submitted 7 March, 2010;
originally announced March 2010.
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Resistive switching in nanogap systems on SiO2 substrates
Authors:
Jun Yao,
Lin Zhong,
Zengxing Zhang,
Tao He,
Zhong **,
Patrick J. Wheeler,
Douglas Natelson,
James M. Tour
Abstract:
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further reduced by using multi-walled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same charact…
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Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further reduced by using multi-walled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same characteristics. This independence of switching on the material compositions of the electrodes, accompanied by observable damage to the SiO2 substrate at the gap region, bespeaks the intrinsic switching from post-breakdown SiO2. It calls for caution when studying resistive switching in nanosystems on oxide substrates, since oxide breakdown extrinsic to the nanosystem can mimic resistive switching. Meanwhile, the high ON/OFF ratio (10E5), fast switching time (2 us, test limit), durable cycles demonstrated show promising memory properties. The intermediate states observed reveal the filamentary conduction nature.
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Submitted 27 June, 2009;
originally announced June 2009.