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3D E-textile for Exercise Physiology and Clinical Maternal Health Monitoring
Authors:
Junyi Zhao,
Chansoo Kim,
Weilun Li,
Zichao Wen,
Zhili Xiao,
Yong Wang,
Shantanu Chakrabartty,
Chuan Wang
Abstract:
Electronic textiles (E-textiles) offer great wearing comfort and unobtrusiveness, thus holding potential for next-generation health monitoring wearables. However, the practical implementation is hampered by challenges associated with poor signal quality, substantial motion artifacts, durability for long-term usage, and non-ideal user experience. Here, we report a cost-effective E-textile system th…
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Electronic textiles (E-textiles) offer great wearing comfort and unobtrusiveness, thus holding potential for next-generation health monitoring wearables. However, the practical implementation is hampered by challenges associated with poor signal quality, substantial motion artifacts, durability for long-term usage, and non-ideal user experience. Here, we report a cost-effective E-textile system that features 3D microfiber-based electrodes for greatly increasing the surface area. The soft and fluffy conductive microfibers disperse freely and securely adhere to the skin, achieving a low impedance at the electrode-skin interface even in the absence of gel. A superhydrophobic fluorinated self-assembled monolayer was deposited on the E-textile surface to render it waterproof while retaining the electrical conductivity. Equipped with a custom-designed motion-artifact canceling wireless data recording circuit, the E-textile system could be integrated into a variety of smart garments for exercise physiology and health monitoring applications. Real-time multimodal electrophysiological signal monitoring, including electrocardiogram (ECG) and electromyography (EMG), was successfully carried out during strenuous cycling and even underwater swimming activities. Furthermore, a multi-channel E-textile was developed and implemented in clinical patient studies for simultaneous real-time monitoring of maternal ECG and uterine EMG signals, incorporating spatial-temporal potential map** capabilities.
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Submitted 10 July, 2024;
originally announced July 2024.
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Fully epitaxial fcc(111) magnetic tunnel junctions with a Co90Fe10/MgAlO/Co90Fe10 structure
Authors:
Jieyuan Song,
Thomas Scheike,
Cong He,
Zhenchao Wen,
Tadakatsu Ohkubo,
Kazuhiro Hono,
Hiroaki Sukegawa,
Seiji Mitani
Abstract:
Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of (001)-type MTJs hinders the further development of spintronic devices. Here, as an alternative to the (001)-type MTJs, an fcc(111)-type MTJ using a fully epitaxi…
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Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of (001)-type MTJs hinders the further development of spintronic devices. Here, as an alternative to the (001)-type MTJs, an fcc(111)-type MTJ using a fully epitaxial CoFe/rock-salt MgAlO (MAO)/CoFe is explored to introduce close-packed lattice systems into MTJs. Using an atomically flat Ru(0001) epitaxial buffer layer, fcc(111) epitaxial growth of the CoFe/MAO/CoFe trilayer is achieved. Sharp CoFe(111)/MAO(111) interfaces are confirmed due to the introduction of periodic dislocations by forming a 5:6 in-plane lattice matching structure. The fabricated (111) MTJ exhibits a tunnel magnetoresistance ratio of 37% at room temperature (47% at 10 K). Symmetric differential conductance curves with respect to bias polarity are observed, indicating the achievement of nearly identical upper and lower MAO interface qualities. Despite the charge-uncompensated (111) orientation for a rock-salt-like MAO barrier, the achievement of flat, stable, and spin-polarized barrier interfaces opens a promising avenue for expanding the design of MTJ structures.
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Submitted 8 August, 2023;
originally announced August 2023.
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Active learning of effective Hamiltonian for super-large-scale atomic structures
Authors:
Xingyue Ma,
Hongying Chen,
Ri He,
Zhanbo Yu,
Sergei Prokhorenko,
Zheng Wen,
Zhicheng Zhong,
Jorge Iñiguez,
L. Bellaiche,
Di Wu,
Yurong Yang
Abstract:
The first-principles-based effective Hamiltonian scheme provides one of the most accurate modeling technique for large-scale structures, especially for ferroelectrics. However, the parameterization of the effective Hamiltonian is complicated and can be difficult for some complex systems such as high-entropy perovskites. Here, we propose a general form of effective Hamiltonian and develop an active…
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The first-principles-based effective Hamiltonian scheme provides one of the most accurate modeling technique for large-scale structures, especially for ferroelectrics. However, the parameterization of the effective Hamiltonian is complicated and can be difficult for some complex systems such as high-entropy perovskites. Here, we propose a general form of effective Hamiltonian and develop an active machine learning approach to parameterize the effective Hamiltonian based on Bayesian linear regression. The parameterization is employed in molecular dynamics simulations with the prediction of energy, forces, stress and their uncertainties at each step, which decides whether first-principles calculations are executed to retrain the parameters. Structures of BaTiO$_3$, Pb(Zr$_{0.75}$Ti$_{0.25}$)O$_3$ and (Pb,Sr)TiO$_3$ system are taken as examples to show the accuracy of this approach, as compared with conventional parametrization method and experiments. This machine learning approach provides a universal and automatic way to compute the effective Hamiltonian parameters for any considered complex systems with super-large-scale (more than $10^7$ atoms) atomic structures.
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Submitted 14 May, 2024; v1 submitted 17 July, 2023;
originally announced July 2023.
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Observation of Fluctuation Spin Hall Effect in Antiferromagnet
Authors:
Chi Fang,
Caihua Wan,
Xiaoyue Zhang,
Satoshi Okamoto,
Tianyi Ma,
Jianying Qin,
Xiao Wang,
Chenyang Guo,
**g Dong,
Guoqiang Yu,
Zhenchao Wen,
Ning Tang,
Stuart S. P. Parkin,
Naoto Nagaosa,
Yuan Lu,
Xiufeng Han
Abstract:
The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase-transition is proved as an e…
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The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase-transition is proved as an effective mechanism to create an additional part of SHE, named as fluctuation spin Hall effect (FSHE). This FSHE enhances the SHA due to the AFM spin fluctuation between conduction electrons and local spins. We detect the FSHE with the inverse and direct spin Hall effect (ISHE and DSHE) set-up and their temperature (T) dependences in the Cr/MgO/Fe magnetic tunnel junctions (MTJs). The SHA is significantly enhanced when temperature is approached to the Néel temperature (T_N) and has a peak value of -0.34 at 200 K near T_N. This value is higher than the room-temperature value by 240% and comparable to that of heavy metals Ta and W. Furthermore, the spin Hall resistivity of Cr well fits the modeled T-dependence when T approaches T_N from low temperatures, implying the AFM spin fluctuation nature of strong SHA enhancement. Thus, this study demonstrates the critical spin fluctuation as a prospective way of increasing SHA and enriches the AFM material candidates for spin-orbitronic devices.
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Submitted 26 April, 2023;
originally announced April 2023.
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Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions
Authors:
Thomas Scheike,
Zhenchao Wen,
Hiroaki Sukegawa,
Seiji Mitani
Abstract:
The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of device resistances. In this study, we demonstrated TMR ratios of up to 631% at room temperature (RT), which is two or more times larger than those used currentl…
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The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of device resistances. In this study, we demonstrated TMR ratios of up to 631% at room temperature (RT), which is two or more times larger than those used currently for magnetoresistive random access memory (MRAM) devices, using CoFe/MgO/CoFe(001) epitaxial MTJs. The TMR ratio increased up to 1143% at 10 K, which corresponds to an effective tunneling spin polarization of 0.923. The observed large TMR ratios resulted from the fine-tuning of atomic-scale structures of the MTJs, such as crystallographic orientations and MgO interface oxidation, in which the well-known Delta1 coherent tunneling mechanism for the giant TMR effect is expected to be pronounced. However, behavior that is not covered by the standard coherent tunneling theory was unexpectedly manifested; i.e., (i) TMR saturation at a thick MgO barrier region and (ii) enhanced TMR oscillation with a 0.32 nm period in MgO thickness. Particularly, the TMR oscillatory behavior dominates the transport in a wide range of MgO thicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140% at RT, attributable to the appearance of large oscillatory components in resistance area product (RA). Further, we found that the oscillatory behaviors of the TMR ratio and RA survive, even under a +-1 V bias voltage application, indicating the robustness of the oscillation. Our demonstration of the giant RT-TMR ratio will be an essential step for establishing spintronic architectures, such as large-capacity MRAMs and spintronic artificial neural networks. More essentially, the present observations can trigger us to revisit the true TMR mechanism in crystalline MTJs.
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Submitted 15 February, 2022;
originally announced February 2022.
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Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions
Authors:
Thomas Scheike,
Zhenchao Wen,
Hiroaki Sukegawa,
Seiji Mitani
Abstract:
Spinel MgAl2O4 and family oxides are emerging barrier materials useful for magnetic tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in a Fe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation of Mg4Al-Ox. Resistance oscillations with a MTJ barrier thickness of 0.3-nm were significantly enhanced com…
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Spinel MgAl2O4 and family oxides are emerging barrier materials useful for magnetic tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in a Fe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation of Mg4Al-Ox. Resistance oscillations with a MTJ barrier thickness of 0.3-nm were significantly enhanced compared to those of a Fe/MgO/Fe(001) MTJ, resulting in a large TMR oscillation peak-to-valley difference of 125% at RT. The differential conductance spectra were symmetric with bias polarity, and the spectrum in the parallel magnetization state at low temperature demonstrate significant peaks within broad local minima at |0.2-0.6| V, indicating improved barrier interfaces by the Mg4Al-Ox barrier. This study demonstrates that TMR ratios in Fe(001)-MTJs can still be improved.
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Submitted 18 December, 2021;
originally announced December 2021.
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On the pure state $v$-representability of density matrix embedding theory
Authors:
Fabian M. Faulstich,
Raehyun Kim,
Zhi-Hao Cui,
Zaiwen Wen,
Garnet Kin-Lic Chan,
Lin Lin
Abstract:
Density matrix embedding theory (DMET) formally requires the matching of density matrix blocks obtained from high-level and low-level theories, but this is sometimes not achievable in practical calculations. In such a case, the global band gap of the low-level theory vanishes, and this can require additional numerical considerations. We find that both the violation of the exact matching condition…
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Density matrix embedding theory (DMET) formally requires the matching of density matrix blocks obtained from high-level and low-level theories, but this is sometimes not achievable in practical calculations. In such a case, the global band gap of the low-level theory vanishes, and this can require additional numerical considerations. We find that both the violation of the exact matching condition and the vanishing low-level gap are related to the assumption that the high-level density matrix blocks are non-interacting pure-state $v$-representable (NI-PS-V), which assumes that the low-level density matrix is constructed following the Aufbau principle. In order to relax the NI-PS-V condition, we develop an augmented Lagrangian method to match the density matrix blocks without referring to the Aufbau principle. Numerical results for 2D Hubbard and hydrogen model systems indicate that in some challenging scenarios, the relaxation of the Aufbau principle directly leads to exact matching of the density matrix blocks, which also yields improved accuracy.
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Submitted 13 January, 2022; v1 submitted 18 October, 2021;
originally announced October 2021.
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Spin Hall effect in a spin-1 chiral semimetal
Authors:
Ke Tang,
Yong-Chang Lau,
Kenji Nawa,
Zhenchao Wen,
Qingyi Xiang,
Hiroaki Sukegawa,
Takeshi Seki,
Yoshio Miura,
Koki Takanashi,
Seiji Mitani
Abstract:
Spin-1 chiral semimetal is a new state of quantum matter hosting unconventional chiral fermions that extend beyond the common Dirac and Weyl fermions. B20-type CoSi is a prototypal material that accommodates such an exotic quasiparticle. To date, the spin transport properties in the spin-1 chiral semimetals, have not been explored yet. In this work, we fabricated B20-CoSi thin films on sapphire c-…
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Spin-1 chiral semimetal is a new state of quantum matter hosting unconventional chiral fermions that extend beyond the common Dirac and Weyl fermions. B20-type CoSi is a prototypal material that accommodates such an exotic quasiparticle. To date, the spin transport properties in the spin-1 chiral semimetals, have not been explored yet. In this work, we fabricated B20-CoSi thin films on sapphire c-plane substrates by magnetron sputtering and studied the spin Hall effect (SHE) by combining experiments and first-principles calculations. The SHE of CoSi using CoSi/CoFeB/MgO heterostructures was investigated via spin Hall magnetoresistance and harmonic Hall measurements. First-principles calculations yield an intrinsic spin Hall conductivity (SHC) at the Fermi level that is consistent with the experiments and reveal its unique Fermi-energy dependence. Unlike the Dirac and Weyl fermion-mediated Hall conductivities that exhibit a peak-like structure centering around the topological node, SHC of B20-CoSi is odd and crosses zero at the node with two antisymmetric local extrema of opposite sign situated below and above in energy. Hybridization between Co d-Si p orbitals and spin-orbit coupling are essential for the SHC, despite the small (~1%) weight of Si p-orbital near the Fermi level. This work expands the horizon of topological spintronics and highlights the importance of Fermi-level tuning in order to fully exploit the topology of spin-1 chiral fermions for spin current generation.
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Submitted 29 June, 2021;
originally announced June 2021.
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Role of line defect in the bandgap and transport properties of silicene nanoribbons
Authors:
Fei Wan,
Xinru Wang,
Yawen Guo,
Jiayan Zhang,
ZhengCheng Wen,
Yuan Li
Abstract:
By using the tight-binding model and non-equilibrium Green's function method (NEGF), we study the band structures and transport properties of a silicene nanoribbon with a line defect where a bulk energy gap is opened due to the sublattice symmetry breaking. The flat subband bends downwards or upwards due to the effect of the line defect. The spin-orbit coupling induces quantum spin Hall states. Es…
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By using the tight-binding model and non-equilibrium Green's function method (NEGF), we study the band structures and transport properties of a silicene nanoribbon with a line defect where a bulk energy gap is opened due to the sublattice symmetry breaking. The flat subband bends downwards or upwards due to the effect of the line defect. The spin-orbit coupling induces quantum spin Hall states. Especially, the energy band depends on the distance between the line defect and the edge of the nanoribbon. The effects of the on-site energies on the band spectra of the two defect configurations are different. There always exists one band gap for different on-site energies for the defect configuration of case 1. However, a gapless state and a band gap can be modulated by changing the on-site energy, the sublattice potential and spin-orbit couplings for the defect configuration of case 2. Accordingly, the variation trends of the conductance including zero conductance can be well understood in terms of the combined effect of the sublattice potential, the on-site energy and spin-orbit couplings on the band structures. Thus it is easy and effective to modulate the transport property of the silicene nanoribbon with the defect configuration of case 2 by utilizing the sublattice potential, the on-site energy and spin-orbit couplings. This study is of great significance for the fabrication and the modulation of the transport property of silicene-based devices.
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Submitted 26 June, 2021;
originally announced June 2021.
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Resonant Band Engineering of Ferroelectric Tunnel Junctions
Authors:
**g Su,
Xingwen Zheng,
Zheng Wen,
Tao Li,
Shijie Xie,
Karin M. Rabe,
Xiaohui Liu,
Evgeny Y. Tsymbal
Abstract:
We propose energy band engineering to enhance tunneling electroresistance (TER) in ferroelectric tunnel junctions (FTJs). We predict that an ultrathin dielectric layer with a smaller band gap, embedded into a ferroelectric barrier layer, acts as a switch controlling high and low conductance states of an FTJ depending on polarization orientation. Using first-principles modeling based on density fun…
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We propose energy band engineering to enhance tunneling electroresistance (TER) in ferroelectric tunnel junctions (FTJs). We predict that an ultrathin dielectric layer with a smaller band gap, embedded into a ferroelectric barrier layer, acts as a switch controlling high and low conductance states of an FTJ depending on polarization orientation. Using first-principles modeling based on density functional theory, we investigate this phenomenon for a prototypical SrRuO3/BaTiO3/SrRuO3 FTJ with a BaSnO3 monolayer embedded in the BaTiO3 barrier. We show that in such a composite-barrier FTJ, ferroelectric polarization of BaTiO3 shifts the conduction band minimum of the BaSnO3 monolayer above or below the Fermi energy depending on polarization orientation. The resulting switching between direct and resonant tunneling leads to a TER effect with a giant ON/OFF conductance ratio. The proposed resonant band engineering of FTJs can serve as a viable tool to enhance their performance useful for device application.
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Submitted 5 February, 2021;
originally announced February 2021.
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Magnetization switching induced by spin-orbit torque from Co2MnGa magnetic Weyl semimetal thin films
Authors:
Ke Tang,
Zhenchao Wen,
Yong-Chang Lau,
Hiroaki Sukegawa,
Takeshi Seki,
Seiji Mitani
Abstract:
This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered structure on MgO(001) substrates. The SOT was characterized by harmonic Hall measurements in a Co2MnGa/Ti/CoFeB heterostructure and a relatively large spin Hall efficie…
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This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered structure on MgO(001) substrates. The SOT was characterized by harmonic Hall measurements in a Co2MnGa/Ti/CoFeB heterostructure and a relatively large spin Hall efficiency of -7.8% was obtained.The SOT-induced magnetization switching of the perpendicularly magnetized CoFeB layer was further demonstrated using the structure. The symmetry of second harmonic signals, thickness dependence of spin Hall efficiency, and shift of anomalous Hall loops under applied currents were also investigated. This study not only contributes to the understanding of the mechanisms of spin-current generation from magnetic-WSM-based heterostructures, but also paves a way for the applications of magnetic WSMs in spintronic devices.
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Submitted 18 January, 2021;
originally announced January 2021.
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Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions
Authors:
Thomas Scheike,
Qingyi Xiang,
Zhenchao Wen,
Hiroaki Sukegawa,
Tadakatsu Ohkubo,
Kazuhiro Hono,
Seiji Mitani
Abstract:
Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a funct…
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Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a function of the MgO thickness with a large peak-to-valley difference of ~80% was observed when the layers were grown on a highly (001)-oriented Cr buffer layer. Specific features of the observed MTJs are symmetric differential conductance (dI/dV) spectra for the bias polarity and plateau-like deep local minima in dI/dV (parallel configuration) at |V| = 0.2~0.5 V. At 3K, fine structures with two dips emerge in the plateau-like dI/dV, reflecting highly coherent tunneling through the Fe/MgO/Fe. We also observed a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at the bottom-Fe/MgO interface.
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Submitted 17 November, 2020;
originally announced November 2020.
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Voltage-controlled magnetic anisotropy under the electronic structure modulation in quantum wells
Authors:
Qingyi Xiang,
Yoshio Miura,
Muftah Al-Mahdawi,
Thomas Scheike,
Xiandong Xu,
Yuya Sakuraba,
Shinya Kasai,
Zhenchao Wen,
Hiroaki Sukegawa,
Seiji Mitani,
Kazuhiro Hono
Abstract:
Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access memories (MRAMs). Here, we show that manipulating the condensed states, i.e., introducing quantum well (QW) can significantly influence the VCMA in a Cr/Fe-QW/MgAl2O4 based magnetic tunnel junction (MTJ). Only for the MTJ…
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Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access memories (MRAMs). Here, we show that manipulating the condensed states, i.e., introducing quantum well (QW) can significantly influence the VCMA in a Cr/Fe-QW/MgAl2O4 based magnetic tunnel junction (MTJ). Only for the MTJ with an even number of Fe atomic layers, we observed a novel A-shaped VCMA curve for a particular QW state, where magnetic anisotropy energy (MAE) reaches a local maximum at zero bias and reduces when applying both positive and negative bias, i.e., a novel bi-polar VCMA effect. Our ab initio calculations demonstrate that the QW states give an additional contribution to perpendicular magnetic anisotropy (PMA), which can explain not only the A-shaped VCMA but also the Fe-layer-number parity dependence of VCMA. The present study suggests that the QW-modulated VCMA should open a new pathway to design VCMA-assisted MRAM.
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Submitted 13 November, 2020;
originally announced November 2020.
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Tunability of domain structure and magnonic spectra in antidot arrays of Heusler alloy
Authors:
Sougata Mallick,
Sucheta Mondal,
Takeshi Seki,
Sourav Sahoo,
Thomas Forrest,
Francesco Maccherozzi,
Zhenchao Wen,
Saswati Barman,
Anjan Barman,
Koki Takanashi,
Subhankar Bedanta
Abstract:
Materials suitable for magnonic crystals demand low magnetic dam** and long spin wave (SW) propagation distance. In this context Co based Heusler compounds are ideal candidates for magnonic based applications. In this work, antidot arrays (with different shapes) of epitaxial $\mathrm{Co}_2\mathrm{Fe}_{0.4}\mathrm{Mn}_{0.6}\mathrm{Si}$ (CFMS) Heusler alloy thin films have been prepared using e-be…
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Materials suitable for magnonic crystals demand low magnetic dam** and long spin wave (SW) propagation distance. In this context Co based Heusler compounds are ideal candidates for magnonic based applications. In this work, antidot arrays (with different shapes) of epitaxial $\mathrm{Co}_2\mathrm{Fe}_{0.4}\mathrm{Mn}_{0.6}\mathrm{Si}$ (CFMS) Heusler alloy thin films have been prepared using e-beam lithography and sputtering technique. Magneto-optic Kerr effect and ferromagnetic resonance analysis have confirmed the presence of dominant cubic and moderate uniaxial magnetic anisotropies in the thin films. Domain imaging via x-ray photoemission electron microscopy on the antidot arrays reveals chain like switching or correlated bigger domains for different shape of the antidots. Time-resolved MOKE microscopy has been performed to study the precessional dynamics and magnonic modes of the antidots with different shapes. We show that the optically induced spin-wave spectra in such antidot arrays can be tuned by changing the shape of the holes. The variation in internal field profiles, pinning energy barrier, and anisotropy modifies the spin-wave spectra dramatically within the antidot arrays with different shapes. We further show that by combining the magnetocrystalline anisotropy with the shape anisotropy, an extra degree of freedom can be achieved to control the magnonic modes in such antidot lattices.
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Submitted 5 July, 2019;
originally announced July 2019.
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Spin-charge conversion in NiMnSb Heusler alloy films
Authors:
Zhenchao Wen,
Zhiyong Qiu,
Sebastian Tolle,
Cosimo Gorini,
Takeshi Seki,
Dazhi Hou,
Takahide Kubota,
Ulrich Eckern,
Eiji Saitoh,
Koki Takanashi
Abstract:
Half-metallic Heusler alloys are attracting considerable attention because of their unique half-metallic band structures which exhibit high spin polarization and yield huge magnetoresistance ratios. Besides serving as ferromagnetic electrodes, Heusler alloys also have the potential to host spin-charge conversion which has been recently demonstrated in other ferromagnetic metals. Here, we report on…
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Half-metallic Heusler alloys are attracting considerable attention because of their unique half-metallic band structures which exhibit high spin polarization and yield huge magnetoresistance ratios. Besides serving as ferromagnetic electrodes, Heusler alloys also have the potential to host spin-charge conversion which has been recently demonstrated in other ferromagnetic metals. Here, we report on the spin-charge conversion effect in the prototypical Heusler alloy NiMnSb. Spin currents were injected from Y3Fe5O12 into NiMnSb films by spin pum**, and then the spin currents were converted to charge currents via spin-orbit interactions. Interestingly, an unusual charge signal was observed with a sign change at low temperature, which can be manipulated by film thickness and ordering structure. It is found that the spin-charge conversion has two contributions. First, the interfacial contribution causes a negative voltage signal, which is almost constant versus temperature. The second contribution is temperature dependent because it is dominated by minority states due to thermally excited magnons in the bulk part of the film. This work provides a pathway for the manipulation of spin-charge conversion in ferromagnetic metals by interface-bulk engineering for spintronic devices.
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Submitted 20 February, 2019;
originally announced February 2019.
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Anomaly in anomalous Nernst effect at low temperature for C1b-type NiMnSb half-Heusler alloy thin film
Authors:
Himanshu Sharma,
Zhenchao Wen,
Koki Takanashi,
Masaki Mizuguchi
Abstract:
The anomaly in the anomalous Nernst effect (ANE) was observed for a C1b-type NiMnSb half-Heusler alloy thin film deposited on a MgO (001) substrate. The Nernst angle (θANE) showed maximum peak with decreasing temperature and reached 0.15 at 80 K, which is considered to be brought by the cross-over from half-metal to normal ferromagnet in NiMnSb at low temperature. This anomaly was also observed fo…
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The anomaly in the anomalous Nernst effect (ANE) was observed for a C1b-type NiMnSb half-Heusler alloy thin film deposited on a MgO (001) substrate. The Nernst angle (θANE) showed maximum peak with decreasing temperature and reached 0.15 at 80 K, which is considered to be brought by the cross-over from half-metal to normal ferromagnet in NiMnSb at low temperature. This anomaly was also observed for the transport properties, that is, both the resistivity and the anomalous Hall resistivity in the same temperature range.
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Submitted 9 November, 2018;
originally announced November 2018.
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Tunable magnetization relaxation of Fe_{2}Cr_{1-x}Co_{x}Si half-metallic Heusler alloys by band structure engineering
Authors:
Shikun He,
Yifan Liu,
Yuhong Zheng,
Qing Qin,
Zhenchao Wen,
Qingyun Wu,
Yi Yang,
Yupu Wang,
Yuan** Feng,
Kie Leong Teo,
Christos Panagopoulos
Abstract:
We report a systematic investigation on the magnetization relaxation properties of iron-based half-metallic Heusler alloy Fe$_{2}$Cr$_{1-x}$Co_${x}$Si (FCCS) thin films using broadband angular-resolved ferromagnetic resonance. Band structure engineering through Co do** (x) demonstrated by first-principles calculations is shown to tune the intrinsic magnetic dam** over an order of magnitude, na…
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We report a systematic investigation on the magnetization relaxation properties of iron-based half-metallic Heusler alloy Fe$_{2}$Cr$_{1-x}$Co_${x}$Si (FCCS) thin films using broadband angular-resolved ferromagnetic resonance. Band structure engineering through Co do** (x) demonstrated by first-principles calculations is shown to tune the intrinsic magnetic dam** over an order of magnitude, namely 0.01-0.0008. Notably, the intrinsic dam** constants for samples with high Co concentration are among the lowest reported for Heusler alloys and even comparable to magnetic insulator yttrium iron garnet. Furthermore, a significant reduction of both isotropic and anisotropic contributions of extrinsic dam** of the FCCS alloys was found in the FCCS films with x=0.5-0.75, which is of particular importance for applications. These results demonstrate a practical recipe to tailor functional magnetization for Heusler alloy-based spintronics at room temperature
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Submitted 1 November, 2017;
originally announced November 2017.
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Nonlinear electric field effect on perpendicular magnetic anisotropy in Fe/MgO interfaces
Authors:
Qingyi Xiang,
Zhenchao Wen,
Hiroaki Sukegawa,
Shinya Kasai,
Takeshi Seki,
Takahide Kubota,
Koki Takanashi,
Seiji Mitani
Abstract:
The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measurement temperature dependences. A large coefficient of the electric field effect of more than 200 fJ/Vm was observed in the negative range of electric field, as well as an areal ener…
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The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measurement temperature dependences. A large coefficient of the electric field effect of more than 200 fJ/Vm was observed in the negative range of electric field, as well as an areal energy density of perpendicular magnetic anisotropy (PMA) of around 600 uJ/m2. More interestingly, nonlinear behavior, giving rise to a local minimum around +100 mV/nm, was observed in the electric field dependence of magnetic anisotropy, being independent of the post-annealing and measurement temperatures. The insensitivity to both the interface conditions and the temperature of the system suggests that the nonlinear behavior is attributed to an intrinsic origin such as an inherent electronic structure in the Fe/MgO interface. The present study can contribute to the progress in theoretical studies, such as ab initio calculations, on the mechanism of the electric field effect on PMA.
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Submitted 7 July, 2017;
originally announced July 2017.
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Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures
Authors:
Zhenchao Wen,
Hiroaki Sukegawa,
Takeshi Seki,
Takahide Kubota,
Koki Takanashi,
Seiji Mitani
Abstract:
Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. Here, we report the first demonstration of the VCMA effect in novel epitaxial Ru/Co2FeAl(CFA)/MgO heterostructures with interfacial perpendicular magnetic anisotropy (PMA). Perpendicularly magnetized tunnel junctions with…
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Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. Here, we report the first demonstration of the VCMA effect in novel epitaxial Ru/Co2FeAl(CFA)/MgO heterostructures with interfacial perpendicular magnetic anisotropy (PMA). Perpendicularly magnetized tunnel junctions with the structure of Ru/CFA/MgO were fabricated and exhibited an effective voltage control on switching fields for the CFA free layer. A large VCMA coefficient of 108 (139) fJ/Vm for the CFA film was achieved at room temperature (4 K). The interfacial stability in the heterostructure was confirmed by repeating measurements. Temperature dependences of both the interfacial PMA and the VCMA effect were also investigated. It is found that the temperature dependences follow power laws of the saturation magnetization with an exponent of ~2. The significant VCMA effect observed in this work indicates that the Ru/CFA/MgO heterostructure could be one of the promising candidates for spintronic devices with voltage control.
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Submitted 9 November, 2016;
originally announced November 2016.
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Interdiffusion in epitaxial ultrathin Co2FeAl/MgO heterostructures with interface-induced perpendicular magnetic anisotropy
Authors:
Zhenchao Wen,
Jason Paul Hadorn,
Jun Okabayashi,
Hiroaki Sukegawa,
Tadakatsu Ohkubo,
Koichiro Inomata,
Seiji Mitani,
Kazuhiro Hono
Abstract:
The structures of epitaxial ultrathin Co2FeAl/MgO(001) heterostructures relating to the interface-induced perpendicular magnetic anisotropy (PMA) were investigated using scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray magnetic circular dichroism. We found that Al atoms from the Co2FeAl layer significantly interdiffuse into MgO, forming an Al-deficient Co-…
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The structures of epitaxial ultrathin Co2FeAl/MgO(001) heterostructures relating to the interface-induced perpendicular magnetic anisotropy (PMA) were investigated using scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray magnetic circular dichroism. We found that Al atoms from the Co2FeAl layer significantly interdiffuse into MgO, forming an Al-deficient Co-Fe-Al/Mg-Al-O structure near the Co2FeAl/MgO interface. This atomic replacement may play an additional role for enhancing PMA, which is consistent with the observed large perpendicular orbital magnetic moments of Fe atoms at the interface. This work suggests that control of interdiffusion at ferromanget/barrier interfaces is critical for designing an interface-induced PMA system.
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Submitted 10 October, 2016;
originally announced October 2016.
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Spin-orbit torque in Cr/CoFeAl/MgO and Ru/CoFeAl/MgO epitaxial magnetic heterostructures
Authors:
Zhenchao Wen,
Junyeon Kim,
Hiroaki Sukegawa,
Masamitsu Hayashi,
Seiji Mitani
Abstract:
We study the spin-orbit torque (SOT) effective fields in Cr/CoFeAl/MgO and Ru/CoFeAl/MgO magnetic heterostructures using the adiabatic harmonic Hall measurement. High-quality perpendicular-magnetic-anisotropy CoFeAl layers were grown on Cr and Ru layers. The magnitudes of the SOT effective fields were found to significantly depend on the underlayer material (Cr or Ru) as well as their thicknesses.…
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We study the spin-orbit torque (SOT) effective fields in Cr/CoFeAl/MgO and Ru/CoFeAl/MgO magnetic heterostructures using the adiabatic harmonic Hall measurement. High-quality perpendicular-magnetic-anisotropy CoFeAl layers were grown on Cr and Ru layers. The magnitudes of the SOT effective fields were found to significantly depend on the underlayer material (Cr or Ru) as well as their thicknesses. The dam**-like longitudinal effective field (ΔH_L) increases with increasing underlayer thickness for all heterostructures. In contrast, the field-like transverse effective field (ΔH_T) increases with increasing Ru thickness while it is almost constant or slightly decreases with increasing Cr thickness. The sign of ΔH_L observed in the Cr-underlayer devices is opposite from that in the Ru-underlayer devices while ΔH_T shows the same sign with a small magnitude. The opposite directions of ΔHL indicate that the signs of spin Hall angle in Cr and Ru are opposite, which are in good agreement with theoretical predictions. These results show sizable contribution from SOT even for elements with small spin orbit coupling such as 3d Cr and 4d Ru.
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Submitted 16 January, 2016;
originally announced January 2016.
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Observation of pure inverse spin Hall effect in ferromagnetic metals by FM/AFM exchange bias structures
Authors:
H. Wu,
C. H. Wan,
Z. H. Yuan,
X. Zhang,
J. Jiang,
Q. T. Zhang,
Z. C. Wen,
X. F. Han
Abstract:
We report that the spin current generated by spin Seebeck effect (SSE) in yttrium iron garnet (YIG) can be detected by a ferromagnetic metal (NiFe). By using the FM/AFM exchange bias structure (NiFe/IrMn), inverse spin Hall effect (ISHE) and planar Nernst effect (PNE) of NiFe can be unambiguously separated, allowing us to observe a pure ISHE signal. After eliminating the in plane temperature gradi…
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We report that the spin current generated by spin Seebeck effect (SSE) in yttrium iron garnet (YIG) can be detected by a ferromagnetic metal (NiFe). By using the FM/AFM exchange bias structure (NiFe/IrMn), inverse spin Hall effect (ISHE) and planar Nernst effect (PNE) of NiFe can be unambiguously separated, allowing us to observe a pure ISHE signal. After eliminating the in plane temperature gradient in NiFe, we can even observe a pure ISHE signal without PNE from NiFe itself. It is worth noting that a large spin Hall angle (0.098) of NiFe is obtained, which is comparable with Pt. This work provides a kind of FM/AFM exchange bias structures to detect the spin current by charge signals, and highlights ISHE in ferromagnetic metals can be used in spintronic research and applications.
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Submitted 17 July, 2015; v1 submitted 26 May, 2015;
originally announced May 2015.
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Neutron inelastic scattering measurements of low energy phonons in the multiferroic BiFeO3
Authors:
John A. Schneeloch,
Zhijun Xu **sheng Wen,
P. M. Gehring,
C. Stock,
M. Matsuda,
B. Winn,
Genda Gu,
Stephen M. Shapiro,
R. J. Birgeneau,
T. Ushiyama,
Y. Yanagisawa,
Y. Tomioka,
T. Ito,
Guangyong Xu
Abstract:
We present neutron inelastic scattering measurements of the low-energy phonons in single crystal BiFeO3. The dispersions of the three acoustic phonon modes (LA along [100], TA1 along [010] and TA2 along [110]) and two low energy optic phonon modes (LO and TO1) have been mapped out between 300 K and 700 K. Elastic constants are extracted from the phonon measurements. The energy linewidths of both T…
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We present neutron inelastic scattering measurements of the low-energy phonons in single crystal BiFeO3. The dispersions of the three acoustic phonon modes (LA along [100], TA1 along [010] and TA2 along [110]) and two low energy optic phonon modes (LO and TO1) have been mapped out between 300 K and 700 K. Elastic constants are extracted from the phonon measurements. The energy linewidths of both TA phonons at the zone boundary clearly broaden when the system is warmed toward the magnetic ordering temperature TN = 640 K. This suggests that the magnetic and low-energy lattice dynamics in this multiferroic material are coupled.
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Submitted 8 October, 2014;
originally announced October 2014.
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Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates
Authors:
Zhenchao Wen,
Hiroaki Sukegawa,
Shinya Kasai,
Koichiro Inomata,
Seiji Mitani
Abstract:
We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy based magnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat surface were achieved using a MgO buffer layer. A tunnel magnetoresistance (TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure on a 7.5-nm-t…
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We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy based magnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat surface were achieved using a MgO buffer layer. A tunnel magnetoresistance (TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure on a 7.5-nm-thick MgO buffer. Spin-transfer torque induced magnetization switching was achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as a switching layer. Using a thermal activation model, the intrinsic critical current density (Jc0) was determined to be 8.2 x 10^6 A/cm^2, which is lower than 2.9 x 10^7 A/cm^2, the value for epitaxial CFA-MTJs [Appl. Phys. Lett. 100, 182403 (2012)]. We found that the Gilbert dam** constant evaluated using ferromagnetic resonance measurements for the polycrystalline CFA film was ~0.015 and was almost independent of the CFA thickness (2~18 nm). The low Jc0 for the polycrystalline MTJ was mainly attributed to the low dam** of the CFA layer compared with the value in the epitaxial one (~0.04).
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Submitted 2 August, 2014;
originally announced August 2014.
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A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance
Authors:
Zhenchao Wen,
Hiroaki Sukegawa,
Takao Furubayashi,
Jungwoo Koo,
Koichiro Inomata,
Seiji Mitani,
Jason Paul Hadorn,
Tadakatsu Ohkubo,
Kazuhiro Hono
Abstract:
An unusual crystallographic orientation of hexagonal Ru with a 4-fold symmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported, in which an approximately Ru(02-23) growth attributes to the lattice matching among MgO, Ru, and Co2FeAl. Perpendicular magnetic anisotropy of the Co2FeAl/MgO interface is substantially enhanced as compared with those with a Cr(001) layer. The MTJs i…
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An unusual crystallographic orientation of hexagonal Ru with a 4-fold symmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported, in which an approximately Ru(02-23) growth attributes to the lattice matching among MgO, Ru, and Co2FeAl. Perpendicular magnetic anisotropy of the Co2FeAl/MgO interface is substantially enhanced as compared with those with a Cr(001) layer. The MTJs incorporating this structure gave rise to the largest tunnel magnetoresistance for perpendicular MTJs using low dam** Heusler alloys. The 4-fold-symmetry hexagonal Ru arises from an epitaxial growth with an unprecedentedly high crystal index, opening a unique pathway for the development of perpendicular anisotropy films of cubic and tetragonal ferromagnetic alloys.
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Submitted 16 August, 2014; v1 submitted 11 July, 2014;
originally announced July 2014.
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Colossal electroresistance in metal/ferroelectric/semiconductor tunnel diodes for resistive switching memories
Authors:
Zheng Wen,
Chen Li,
Di Wu,
Aidong Li,
Naiben Ming
Abstract:
We propose a tunneling heterostructure by replacing one of the metal electrodes in a metal/ferroelectric/metal ferroelectric tunnel junction with a heavily doped semiconductor. In this metal/ferroelectric/semiconductor tunnel diode, both the height and the width of the tunneling barrier can be electrically modulated due to the ferroelectric field effect, leading to a colossal tunneling electroresi…
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We propose a tunneling heterostructure by replacing one of the metal electrodes in a metal/ferroelectric/metal ferroelectric tunnel junction with a heavily doped semiconductor. In this metal/ferroelectric/semiconductor tunnel diode, both the height and the width of the tunneling barrier can be electrically modulated due to the ferroelectric field effect, leading to a colossal tunneling electroresistance. This idea is implemented in Pt/BaTiO3/Nb:SrTiO3 heterostructures, in which an ON/OFF conductance ratio above 10$^4$ can be readily achieved at room temperature. The colossal tunneling electroresistance, reliable switching reproducibility and long data retention observed in these ferroelectric tunnel diodes suggest their great potential in non-destructive readout nonvolatile memories.
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Submitted 27 August, 2012;
originally announced August 2012.
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Transport Measurements on Nano-engineered Two Dimensional Superconducting Wire Networks
Authors:
W. J. Zhang,
S. K. He,
H. Xiao,
G. M. Xue,
Z. C. Wen,
X. F. Han,
S. P. Zhao,
C. Z. Gu,
X. G. Qiu
Abstract:
Superconducting triangular Nb wire networks with high normal-state resistance are fabricated by using a negative tone hydrogen silsesquioxane (HSQ) resist. Robust magnetoresistance oscillations are observed up to high magnetic fields and maintained at low temperatures, due to the eective reduction of wire dimensions. Well-defined dips appear at integral and rational values (1/2, 1/3, 1/4) of the r…
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Superconducting triangular Nb wire networks with high normal-state resistance are fabricated by using a negative tone hydrogen silsesquioxane (HSQ) resist. Robust magnetoresistance oscillations are observed up to high magnetic fields and maintained at low temperatures, due to the eective reduction of wire dimensions. Well-defined dips appear at integral and rational values (1/2, 1/3, 1/4) of the reduced flux f = Phi/Phi_0, which is the first observation in the triangular wire networks. These results are well consistent with theoretical calculations for the reduced critical temperature as a function of f.
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Submitted 22 March, 2012;
originally announced March 2012.
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Edge superconducting state in Nb thin film with rectangular arrays of antidots
Authors:
W. J. Zhang,
S. K. He,
H. F. Liu,
G. M. Xue,
H. Xiao,
B. H. Li,
Z. C. Wen,
X. F. Han,
S. P. Zhao,
C. Z. Gu,
X. G. Qiu,
Victor V. Moshchalkov
Abstract:
Superconducting Nb thin films with rectangular arrays of submicron antidots have been systemically investigated by transport measurements. In low fields, the magnetoresistance curves demonstrate well-defined dips at integral and rational numbers of flux quanta per unit cell, which corresponds to a superconducting wire network-like regime. When the magnetic field is higher than a saturation field,…
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Superconducting Nb thin films with rectangular arrays of submicron antidots have been systemically investigated by transport measurements. In low fields, the magnetoresistance curves demonstrate well-defined dips at integral and rational numbers of flux quanta per unit cell, which corresponds to a superconducting wire network-like regime. When the magnetic field is higher than a saturation field, interstitial vortices interrupt the collective oscillation in low fields and form vortex sublattice, where a larger magnetic field interval is observed. In higher fields, a crossover behavior from the interstitial sublattice state to a single-loop-like state is observed, characterized by oscillations with a period of $Φ_0/πr_{eff}^2$, originating from the existence of edge superconducting states with a size $r_{eff}$ around the antidots.
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Submitted 1 March, 2012; v1 submitted 1 March, 2012;
originally announced March 2012.
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Influence of Intrinsic Electronic Properties on Light Transmission through Subwavelength Holes on Gold and MgB2 Thin Films
Authors:
Xu Fang,
Chenggang Zhuang,
Zhenchao Wen,
Xiufeng Han,
Qingrong Feng,
X. X. Xi,
Franco Nori,
Xincheng Xie,
Qian Niu,
Xianggang Qiu
Abstract:
We show how intrinsic material properties modify light transmission through subwavelength hole arrays on thin metallic films in the THz regime. We compare the temperature-dependent transmittance of Au films and MgB$_{2}$ films. The experimental data is consistent with analytical calculations, and is attributed to the temperature change of the conductivity of both films. The transmission versus con…
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We show how intrinsic material properties modify light transmission through subwavelength hole arrays on thin metallic films in the THz regime. We compare the temperature-dependent transmittance of Au films and MgB$_{2}$ films. The experimental data is consistent with analytical calculations, and is attributed to the temperature change of the conductivity of both films. The transmission versus conductivity is interpreted within the open resonator model when taking the skin depth into consideration. We also show that the efficiency of this temperature control depends on the ratio of the transmission peak frequency to the superconducting energy gap in MgB$_{2}$ films.
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Submitted 3 December, 2011;
originally announced December 2011.
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Abnormal magnetoresistance behavior in Nb thin film with rectangular antidot lattice
Authors:
W. J. Zhang,
S. K. He,
B. H. Li,
F. Cheng,
B. Xu,
Z. C. Wen,
W. H. Cao,
X. F. Han,
S. P. Zhao,
X. G. Qiu
Abstract:
Abnormal magnetoresistance behavior is found in superconducting Nb films perforated with rectangular arrays of antidots (holes). Generally magnetoresistance were always found to increase with increasing magnetic field. Here we observed a reversal of this behavior for particular in low temperature or current density. This phenomenon is due to a strong 'caging effect' which interstitial vortices are…
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Abnormal magnetoresistance behavior is found in superconducting Nb films perforated with rectangular arrays of antidots (holes). Generally magnetoresistance were always found to increase with increasing magnetic field. Here we observed a reversal of this behavior for particular in low temperature or current density. This phenomenon is due to a strong 'caging effect' which interstitial vortices are strongly trapped among pinned multivortices.
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Submitted 11 December, 2011; v1 submitted 16 November, 2011;
originally announced November 2011.
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Wire network behavior in superconducting Nb films with diluted triangular arrays of holes
Authors:
S. K. He,
W. J. Zhang,
H. F. Liu,
G. M. Xue,
B. H. Li,
H. Xiao,
Z. C. Wen,
X. F. Han,
S. P. Zhao,
C. Z. Gu,
X. G. Qiu
Abstract:
We present transport measurement results on superconducting Nb films with diluted triangular arrays (honeycomb and kagomé) of holes. The patterned films have large disk-shaped interstitial regions even when the edge-to-edge separations between nearest neighboring holes are comparable to the coherence length. Changes in the field interval of two consecutive minima in the field dependent resistance…
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We present transport measurement results on superconducting Nb films with diluted triangular arrays (honeycomb and kagomé) of holes. The patterned films have large disk-shaped interstitial regions even when the edge-to-edge separations between nearest neighboring holes are comparable to the coherence length. Changes in the field interval of two consecutive minima in the field dependent resistance $R(H)$ curves are observed. In the low field region, fine structures in the $R(H)$ and $T_c(H)$ curves are identified in both arrays. Comparison of experimental data with calculation results shows that these structures observed in honeycomb and kagomé hole arrays resemble those in wire networks with triangular and $T_3$ symmetries, respectively. Our findings suggest that even in these specified periodic hole arrays with very large interstitial regions, the low field fine structures are determined by the connectivity of the arrays
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Submitted 8 February, 2012; v1 submitted 7 September, 2011;
originally announced September 2011.
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Confirmation of room-temperature long range magnetic order in GaN:Mn
Authors:
Y. H. Zhang,
Z. Y. Lin,
F. F. Zhang,
X. L. Yang,
D. Li,
Z. T. Chen,
G. J. Lian,
Y. Z. Qian,
X. Z. Jiang,
T. Dai,
Z. C. Wen,
B. S. Han,
C. D. Wang,
G. Y. Zhang
Abstract:
We propose a method for nano-scale characterization of long range magnetic order in diluted magnetic systems to clarify the origins of the room temperature ferromagnetism. The GaN:Mn thin films are grown by metal-organic chemical vapor deposition with the concentration of Ga-substitutional Mn up to 3.8%. Atomic force microscope (AFM) and magnetic force microscope (MFM) characterizations are perfor…
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We propose a method for nano-scale characterization of long range magnetic order in diluted magnetic systems to clarify the origins of the room temperature ferromagnetism. The GaN:Mn thin films are grown by metal-organic chemical vapor deposition with the concentration of Ga-substitutional Mn up to 3.8%. Atomic force microscope (AFM) and magnetic force microscope (MFM) characterizations are performed on etched artificial microstructures and natural dislocation pits. Numerical simulations and theoretical analysis on the AFM and MFM data have confirmed the formation of long range magnetic order and ruled out the possibility that nano-clusters contributed to the ferromagnetism. We suggest that delocalized electrons might play a role in the establishment of this long range magnetic order.
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Submitted 17 November, 2010;
originally announced November 2010.
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Composite metamaterials with dual-band magnetic resonances in the terahertz frequency regime
Authors:
Ming Li,
Zhenchao Wen,
**xin Fu,
Xu Fang,
Yaomin Dai,
Rongjuan Liu,
Xiufeng Han,
Xianggang Qiu
Abstract:
Composite metamaterials(CMMs) combining a subwavelength metallic hole array (i.e. one-layer fishnet structure) and an array of split-ring resonators(SRRs) on the same board are fabricated with gold films on silicon wafer. Transmission measurements of the CMMs in the terahertz range have been performed. Dual-band magnetic resonances, namely, a LC resonance at 4.40 THz and an additional magnetic r…
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Composite metamaterials(CMMs) combining a subwavelength metallic hole array (i.e. one-layer fishnet structure) and an array of split-ring resonators(SRRs) on the same board are fabricated with gold films on silicon wafer. Transmission measurements of the CMMs in the terahertz range have been performed. Dual-band magnetic resonances, namely, a LC resonance at 4.40 THz and an additional magnetic resonance at 8.64 THz originating from the antiparallel current in wire pairs in the CMMs are observed when the electrical field polarization of the incident light is parallel to the gap of the component SRR. The numerical simulations agree well with the experimental results and further clarify the nature of the dual-band magnetic resonances.
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Submitted 26 April, 2009;
originally announced April 2009.
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Effects of current on nanoscale ring-shaped magnetic tunnel junctions
Authors:
Hong-Xiang Wei,
Jiexuan He,
Zhen-Chao Wen,
Xiu-Feng Han,
Wen-Shan Zhan,
Shufeng Zhang
Abstract:
We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of $6\times 10^{6}$A/cm$^2$, the magnetization of the two magnetic rings can be switched back and forth between parallel and antiparallel onion states. Theoretical analysis and mi…
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We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of $6\times 10^{6}$A/cm$^2$, the magnetization of the two magnetic rings can be switched back and forth between parallel and antiparallel onion states. Theoretical analysis and micromagnetic simulation show that the dominant mechanism for the observed current-driven switching is the spin torque rather than the current-induced circular Oersted field.
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Submitted 22 April, 2008;
originally announced April 2008.
