Showing 1–11 of 11 results for author: Weiland, C

Atomic Insights into the Oxidative Degradation Mechanisms of Sulfide Solid Electrolytes

Authors: Chuntian Cao, Matthew R. Carbone, Cem Komurcuoglu, Jagriti S. Shekhawat, Kerry Sun, Haoyue Guo, Sizhan Liu, Ke Chen, Seong-Min Bak, Yonghua Du, Conan Weiland, Xiao Tong, Dan Steingart, Shinjae Yoo, Nongnuch Artrith, Alexander Urban, Deyu Lu, Feng Wang

Abstract: Electrochemical degradation of solid electrolytes is a major roadblock in the development of solid-state batteries, and the formed solid-solid interphase (SSI) plays a key role in the performance of solid-state batteries. In this study, by combining experimental X-ray absorption spectroscopy (XAS) measurements, first-principles simulations, and unsupervised machine learning, we have unraveled the… ▽ More Electrochemical degradation of solid electrolytes is a major roadblock in the development of solid-state batteries, and the formed solid-solid interphase (SSI) plays a key role in the performance of solid-state batteries. In this study, by combining experimental X-ray absorption spectroscopy (XAS) measurements, first-principles simulations, and unsupervised machine learning, we have unraveled the atomic-scale oxidative degradation mechanisms of sulfide electrolytes at the interface using the baseline Li3PS4 (LPS) electrolyte as a model system. The degradation begins with a decrease of Li neighbor affinity to S atoms upon initial delithiation, followed by the formation of S-S bonds as the PS4 tetrahedron deforms. After the first delithiation cycle, the PS4 motifs become strongly distorted and PS3 motifs start to form. Spectral fingerprints of the local structural evolution are identified, which correspond to the main peak broadening and the peak shifting to a higher energy by about 2.5 eV in P K-edge XAS and a new peak emerging at 2473 eV in S K-edge XAS during delithiation. The spectral fingerprints serve as a proxy for the electrochemical stability of phosphorus sulfide solid electrolytes beyond LPS, as demonstrated in argyrodite Li6PS5Cl. We observed that the strong distortion and destruction of PS4 tetrahedra and the formation of S-S bonds are correlated with an increased interfacial impedance. To the best of our knowledge, this study showcases the first atomic-scale insights into the oxidative degradation mechanism of the LPS electrolyte, which can provide guidance for controlling macroscopic reactions through microstructural engineering and, more generally, can advance the rational design of sulfide electrolytes. △ Less

Submitted 1 October, 2023; originally announced October 2023.

Ultrathin Magnesium-based Coating as an Efficient Oxygen Barrier for Superconducting Circuit Materials

Authors: Chenyu Zhou, Junsik Mun, Juntao Yao, Aswin kumar Anbalagan, Mohammad D. Hossain, Russell A. McLellan, Ruoshui Li, Kim Kisslinger, Gengnan Li, Xiao Tong, Ashley R. Head, Conan Weiland, Steven L. Hulbert, Andrew L. Walter, Qiang Li, Yimei Zhu, Peter V. Sushko, Mingzhao Liu

Abstract: Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately… ▽ More Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately placing a limit on the coherence time. In this study, we present a novel approach for suppressing the formation of tantalum oxide using an ultrathin magnesium (Mg) cap** layer deposited on top of tantalum. Synchrotron-based X-ray photoelectron spectroscopy (XPS) studies demonstrate that oxide is confined to an extremely thin region directly beneath the Mg/Ta interface. Additionally, we demonstrate that the superconducting properties of thin Ta films are improved following the Mg cap**, exhibiting sharper and higher-temperature transitions to superconductive and magnetically ordered states. Based on the experimental data and computational modeling, we establish an atomic-scale mechanistic understanding of the role of the cap** layer in protecting Ta from oxidation. This work provides valuable insights into the formation mechanism and functionality of surface tantalum oxide, as well as a new materials design principle with the potential to reduce dielectric loss in superconducting quantum materials. Ultimately, our findings pave the way for the realization of large-scale, high-performance quantum computing systems. △ Less

Submitted 25 September, 2023; v1 submitted 21 September, 2023; originally announced September 2023.

Diamond Surface Functionalization via Visible Light-Driven C-H Activation for Nanoscale Quantum Sensing

Authors: Lila V. H. Rodgers, Suong T. Nguyen, James H. Cox, Kalliope Zervas, Zhiyang Yuan, Sorawis Sangtawesin, Alastair Stacey, Cherno Jaye, Conan Weiland, Anton Pershin, Adam Gali, Lars Thomsen, Simon A. Meynell, Lillian B. Hughes, Ania C. Bleszynski Jayich, Xin Gui, Robert J. Cava, Robert R. Knowles, Nathalie P. de Leon

Abstract: Nitrogen-vacancy centers in diamond are a promising platform for nanoscale nuclear magnetic resonance sensing. Despite significant progress towards using NV centers to detect and localize nuclear spins down to the single spin level, NV-based spectroscopy of individual, intact, arbitrary target molecules remains elusive. NV molecular sensing requires that target molecules are immobilized within a f… ▽ More Nitrogen-vacancy centers in diamond are a promising platform for nanoscale nuclear magnetic resonance sensing. Despite significant progress towards using NV centers to detect and localize nuclear spins down to the single spin level, NV-based spectroscopy of individual, intact, arbitrary target molecules remains elusive. NV molecular sensing requires that target molecules are immobilized within a few nanometers of NV centers with long spin coherence time. The inert nature of diamond typically requires harsh functionalization techniques such as thermal annealing or plasma processing, limiting the scope of functional groups that can be attached to the surface. Solution-phase chemical methods can be more readily generalized to install diverse functional groups, but they have not been widely explored for single-crystal diamond surfaces. Moreover, realizing shallow NV centers with long spin coherence times requires highly ordered single-crystal surfaces, and solution-phase functionalization has not yet been shown to be compatible with such demanding conditions. In this work, we report a versatile strategy to directly functionalize C-H bonds on single-crystal diamond surfaces under ambient conditions using visible light. This functionalization method is compatible with charge stable NV centers within 10 nm of the surface with spin coherence times comparable to the state of the art. As a proof of principle, we use shallow ensembles of NV centers to detect nuclear spins from functional groups attached to the surface. Our approach to surface functionalization based on visible light-driven C-H bond activation opens the door to deploying NV centers as a broad tool for chemical sensing and single-molecule spectroscopy. △ Less

Submitted 13 September, 2023; originally announced September 2023.

Engineering of Niobium Surfaces Through Accelerated Neutral Atom Beam Technology For Quantum Applications

Authors: Soumen Kar, Conan Weiland, Chenyu Zhou, Ekta Bhatia, Brian Martinick, Jakub Nalaskowski, John Mucci, Stephen Olson, Pui Yee Hung, Ilyssa Wells, Hunter Frost, Corbet S. Johnson, Thomas Murray, Vidya Kaushik, Sean Kirkpatrick, Kiet Chau, Michael J. Walsh, Mingzhao Liu, Satyavolu S. Papa Rao

Abstract: A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLS). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by surface engineering (i.e., replacing uncontr… ▽ More A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLS). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by surface engineering (i.e., replacing uncontrolled native oxide of superconducting metals with a thin, stable surface with predictable characteristics) can be a key enabler for pushing performance forward with devices of higher quality factor. In this work, we present a novel approach to replace the native oxide of niobium (typically formed in an uncontrolled fashion when its pristine surface is exposed to air) with an engineered oxide, using a room-temperature process that leverages Accelerated Neutral Atom Beam (ANAB) technology at 300 mm wafer scale. This ANAB beam is composed of a mixture of argon and oxygen, with tunable energy per atom, which is rastered across the wafer surface. The ANAB-engineered Nb-oxide thickness was found to vary from 2 nm to 6 nm depending on ANAB process parameters. Modeling of variable-energy XPS data confirm thickness and compositional control of the Nb surface oxide by the ANAB process. These results correlate well with those from transmission electron microscopy and X-ray reflectometry. Since ANAB is broadly applicable to material surfaces, the present study indicates its promise for modification of the surfaces of superconducting quantum circuits to achieve longer coherence times. △ Less

Submitted 27 February, 2023; originally announced February 2023.

Comments: 22 pages, 7 figures, will be submitted to Superconductor Science and Technology Special Focus Issue Journal

Journal ref: Journal of Applied Physics, 134 (2), 2023

Simulated sulfur K-edge X-ray absorption spectroscopy database of lithium thiophosphate solid electrolytes

Authors: Haoyue Guo, Matthew R. Carbone, Chuntian Cao, Jianzhou Qu, Yonghua Du, Seong-Min Bak, Conan Weiland, Feng Wang, Shinjae Yoo, Nongnuch Artrith, Alexander Urban, Deyu Lu

Abstract: X-ray absorption spectroscopy (XAS) is a premier technique for materials characterization, providing key information about the local chemical environment of the absorber atom. In this work, we develop a database of sulfur K-edge XAS spectra of crystalline and amorphous lithium thiophosphate materials based on the atomic structures reported in Chem. Mater., 34, 6702 (2022). The XAS database is base… ▽ More X-ray absorption spectroscopy (XAS) is a premier technique for materials characterization, providing key information about the local chemical environment of the absorber atom. In this work, we develop a database of sulfur K-edge XAS spectra of crystalline and amorphous lithium thiophosphate materials based on the atomic structures reported in Chem. Mater., 34, 6702 (2022). The XAS database is based on simulations using the excited electron and core-hole pseudopotential approach implemented in the Vienna Ab initio Simulation Package. Our database contains 2681 S K-edge XAS spectra for 66 crystalline and glassy structure models, making it the largest collection of first-principles computational XAS spectra for glass/ceramic lithium thiophosphates to date. This database can be used to correlate S spectral features with distinct S species based on their local coordination and short-range ordering in sulfide-based solid electrolytes. The data is openly distributed via the Materials Cloud, allowing researchers to access it for free and use it for further analysis, such as spectral fingerprinting, matching with experiments, and develo** machine learning models. △ Less

Submitted 31 January, 2023; originally announced February 2023.

Comments: 11 pages, 3 figures, 1 table

Chemical profiles of the oxides on tantalum in state of the art superconducting circuits

Authors: Russell A. McLellan, Aveek Dutta, Chenyu Zhou, Yichen Jia, Conan Weiland, Xin Gui, Alexander P. M. Place, Kevin D. Crowley, Xuan Hoang Le, Trisha Madhavan, Youqi Gang, Lukas Baker, Ashley R. Head, Iradwikanari Waluyo, Ruoshui Li, Kim Kisslinger, Adrian Hunt, Ignace Jarrige, Stephen A. Lyon, Andi M. Barbour, Robert J. Cava, Andrew A. Houck, Steven L. Hulbert, Mingzhao Liu, Andrew L. Walter , et al. (1 additional authors not shown)

Abstract: Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently… ▽ More Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently showed that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, we study the chemical profile of the surface of tantalum films grown on c-plane sapphire using variable energy X-ray photoelectron spectroscopy (VEXPS). We identify the different oxidation states of tantalum that are present in the native oxide resulting from exposure to air, and we measure their distribution through the depth of the film. Furthermore, we show how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. By correlating these measurements with detailed measurements of quantum devices, we can improve our understanding of the microscopic device losses. △ Less

Submitted 20 January, 2023; v1 submitted 11 January, 2023; originally announced January 2023.

Microscopic Relaxation Channels in Materials for Superconducting Qubits

Authors: Anjali Premkumar, Conan Weiland, Sooyeon Hwang, Berthold Jaeck, Alexander P. M. Place, Iradwikanari Waluyo, Adrian Hunt, Valentina Bisogni, Jonathan Pelliciari, Andi Barbour, Mike S. Miller, Paola Russo, Fernando Camino, Kim Kisslinger, Xiao Tong, Mark S. Hybertsen, Andrew A. Houck, Ignace Jarrige

Abstract: Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we perform measurements of transmon qubit relaxation times $T_1$ in parallel with spectroscopy and microscopy of the thin polycrystalline niobium films used in qubit fabr… ▽ More Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we perform measurements of transmon qubit relaxation times $T_1$ in parallel with spectroscopy and microscopy of the thin polycrystalline niobium films used in qubit fabrication. By comparing results for films deposited using three techniques, we reveal correlations between $T_1$ and grain size, enhanced oxygen diffusion along grain boundaries, and the concentration of suboxides near the surface. Physical mechanisms connect these microscopic properties to residual surface resistance and $T_1$ through losses arising from the grain boundaries and from defects in the suboxides. Further, experiments show that the residual resistance ratio can be used as a figure of merit for qubit lifetime. This comprehensive approach to understanding qubit decoherence charts a pathway for materials-driven improvements of superconducting qubit performance. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Separating Electrons and Donors in BaSnO3 via Band Engineering

Authors: Abhinav Prakash, Nicholas F. Quackenbush, Hwanhui Yun, Jacob Held, Tianqi Wang, Tristan Truttmann, James M. Ablett, Conan Weiland, Tien-Lin Lee, Joseph C. Woicik, K. Andre Mkhoyan, Bharat Jalan

Abstract: Through a combination of thin film growth, hard X-ray photoelectron spectroscopy (HAXPES), scanning transmission electron microscopy/electron energy loss spectroscopy (STEM/EELS), magneto-transport measurements, and transport modeling, we report on the demonstration of modulation-do** of BaSnO3 (BSO) using a wider bandgap La-doped SrSnO3 (LSSO) layer. Hard X-ray photoelectron spectroscopy (HAXPE… ▽ More Through a combination of thin film growth, hard X-ray photoelectron spectroscopy (HAXPES), scanning transmission electron microscopy/electron energy loss spectroscopy (STEM/EELS), magneto-transport measurements, and transport modeling, we report on the demonstration of modulation-do** of BaSnO3 (BSO) using a wider bandgap La-doped SrSnO3 (LSSO) layer. Hard X-ray photoelectron spectroscopy (HAXPES) revealed a valence band offset of 0.71 +/- 0.02 eV between LSSO and BSO resulting in a favorable conduction band offset for remote do** of BSO using LSSO. Nonlinear Hall effect of LSSO/BSO heterostructure confirmed two-channel conduction owing to electron transfer from LSSO to BSO and remained in good agreement with the results of self-consistent solution to one-dimensional Poisson and Schrödinger equations. Angle-dependent HAXPES measurements revealed a spatial distribution of electrons over 2-3 unit cells in BSO. These results bring perovskite oxides a step closer to room-temperature oxide electronics by establishing modulation-do** approaches in non-SrTiO3-based oxide heterostructure. △ Less

Submitted 11 May, 2019; originally announced May 2019.

Experimental assignment of many-electron excitations in the photo-ionization of NiO

Authors: J. C. Woicik, J. M. Ablett, N. F. Quackenbush, A. K. Rumaiz, C. Weiland, T. C. Droubay, S. A. Chambers

Abstract: The absorption of a photon and the emission of an electron is not a simple, two-particle process. The complicated many-electron features observed during core photo-ionization can therefore reveal many of the hidden secrets about the ground and excited-state electronic structures of a material. Careful analysis of the photon-energy dependence of the Ni KLL Auger de-excitation spectra at and above t… ▽ More The absorption of a photon and the emission of an electron is not a simple, two-particle process. The complicated many-electron features observed during core photo-ionization can therefore reveal many of the hidden secrets about the ground and excited-state electronic structures of a material. Careful analysis of the photon-energy dependence of the Ni KLL Auger de-excitation spectra at and above the Ni 1s photo-ionization threshold has identified the satellite structure that appears in both the photo-electron emission and the x-ray absorption spectra of NiO as Ni metal 3d eg -> Ni metal 3d eg and O ligand 2p eg -> Ni metal 3d eg charge-transfer excitations, respectively. These assignments elucidate the conflicting theoretical predictions of the last five decades in addition to other anomalous effects in the spectroscopy of this unique material. △ Less

Submitted 14 May, 2018; originally announced May 2018.

Comments: 5 pages and 6 figures

Journal ref: Phys. Rev. B 97, 245142 (2018)

Stoichiometry Dependence of Potential Screening at La$_{(1-δ)}$Al$_{(1+δ)}$O$_3$/SrTiO$_3$ Interfaces

Authors: C. Weiland, G. E. Sterbinsky, A. K. Rumaiz, C. S. Hellberg, J. C. Woicik, S. Zhu, D. G. Schlom

Abstract: Hard x-ray photoelectron spectroscopy (HAXPES) and variable kinetic energy x-ray photoelectron spectroscopy (VKE-XPS) analyses have been performed on 10 unit cell La$_{(1-δ)}$Al$_{(1+δ)}$O$_3$ films, with La:Al ratios of 1.1, 1.0, and 0.9, deposited on SrTiO$_3$. Of the three films, only the Al-rich film was known to have a conductive interface. VKE-XPS, coupled with maximum entropy analysis, show… ▽ More Hard x-ray photoelectron spectroscopy (HAXPES) and variable kinetic energy x-ray photoelectron spectroscopy (VKE-XPS) analyses have been performed on 10 unit cell La$_{(1-δ)}$Al$_{(1+δ)}$O$_3$ films, with La:Al ratios of 1.1, 1.0, and 0.9, deposited on SrTiO$_3$. Of the three films, only the Al-rich film was known to have a conductive interface. VKE-XPS, coupled with maximum entropy analysis, shows significant differences in the compositional depth profile between the Al-rich, the La-rich, and stoichiometric films; significant La enrichment at the interface is observed in the La-rich and stoichiometric films, while the Al-rich shows little to no intermixing. Additionally, the La-rich and stoichiometric films show a high concentration of Al at the surface, which is not observed in the Al-rich film. HAXPES valence band (VB) analysis shows a broadening of the VB for the Al-rich sample relative to the stoichiometric and La-rich samples, which have insulating interfaces. This broadening is consistent with an electric field across the Al-rich film. These results are consistent with a defect driven electronic reconstruction. △ Less

Submitted 10 March, 2015; originally announced March 2015.

Comments: 8 pages, 9 figures

A loss for photoemission is a gain for Auger: Direct experimental evidence of crystal-field splitting and charge transfer in photoelectron spectroscopy

Authors: J. C. Woicik, C. Weiland, A. K. Rumaiz

Abstract: We find a new 5 eV satellite in the Ti 1s photoelectron spectrum of the transition-metal oxide SrTiO$_3$. This satellite appears in addition to the well-studied 13 eV structure that is typically associated with the Ti 2p core line. We give direct experimental evidence that the presence of two satellites is due to the crystal-field splitting of the metal 3d orbitals. They originate from ligand 2p t… ▽ More We find a new 5 eV satellite in the Ti 1s photoelectron spectrum of the transition-metal oxide SrTiO$_3$. This satellite appears in addition to the well-studied 13 eV structure that is typically associated with the Ti 2p core line. We give direct experimental evidence that the presence of two satellites is due to the crystal-field splitting of the metal 3d orbitals. They originate from ligand 2p t$_{2g}$ $\rightarrow$ metal 3d t$_{2g}$ and ligand 2p e$_g$ $\rightarrow$ metal 3d e$_g$ monopole charge-transfer excitations within the sudden approximation of quantum mechanics. This assignment is made by the energetics of the resonant and high-energy threshold behaviors of the Ti K-L$_2$L$_3$ Auger decay that follows Ti 1s photo-ionization. △ Less

Submitted 22 January, 2015; originally announced January 2015.

Comments: 4 pages, 5 figures