Showing 1–37 of 37 results for author: Wei, G

Topological Corner Modes by Composite Wannier States in Glide-Symmetric Photonic Crystal

Authors: Zhenzhen Liu, Xiaoxi Zhou, Guochao Wei, Lei Gao, Bo hou, Jun-Jun Xiao

Abstract: Second-order topological insulators can be characterized by their bulk polarization, which is believed to be intrinsically connected to the center of the Wannier function. In this study, we demonstrate the existence of second-order topological insulators that feature a pair of partially degenerate photonic bands. These arise from the nonsymmorphic glide symmetry in an all-dielectric photonic cryst… ▽ More Second-order topological insulators can be characterized by their bulk polarization, which is believed to be intrinsically connected to the center of the Wannier function. In this study, we demonstrate the existence of second-order topological insulators that feature a pair of partially degenerate photonic bands. These arise from the nonsymmorphic glide symmetry in an all-dielectric photonic crystal. The center of the maximally localized Wannier function (MLWF) is consistently located at the origin but is not equivalent with respect to the sum of constituent polarizations. As a result, topological corner modes can be identified by the distinctly hybridized MLWFs that truncate at the sample boundary. Through full-wave numerical simulations paired with microwave experiments, the second-order topology is clearly confirmed and characterized. These topological corner states exhibit notably unique modal symmetries, which are made possible by the inversion of the Wannier bands. Our results provide an alternative approach to explore higher-order topological physics with significant potential for applications in integrated and quantum photonics. △ Less

Submitted 3 May, 2024; v1 submitted 1 May, 2024; originally announced May 2024.

Mechanical control of quantum transport in graphene

Authors: A. C. McRae, G. Wei, L. Huang, S. Yigen, V. Tayari, A. R. Champagne

Abstract: Two-dimensional materials (2DMs) are fundamentally electro-mechanical systems. Their environment unavoidably strains them and modifies their quantum transport properties. For instance, a simple uniaxial strain could completely turn off the conductivity of ballistic graphene or switch on/off the superconducting phase of magic-angle bilayer graphene. Here we report measurements of quantum transport… ▽ More Two-dimensional materials (2DMs) are fundamentally electro-mechanical systems. Their environment unavoidably strains them and modifies their quantum transport properties. For instance, a simple uniaxial strain could completely turn off the conductivity of ballistic graphene or switch on/off the superconducting phase of magic-angle bilayer graphene. Here we report measurements of quantum transport in strained graphene which agree quantitatively with models based on mechanically-induced gauge potentials. We mechanically induce in-situ a scalar potential, which modifies graphene's work function by up to 25 meV, and vector potentials which suppress the ballistic conductivity of graphene by up to 30 % and control its quantum interferences. To do so, we developed an experimental platform able to precisely tune both the mechanics and electrostatics of suspended graphene transistors at low-temperature over a broad range of strain (up to 2.6 %). This work opens many opportunities to experimentally explore quantitative strain effects in 2DM quantum transport and technologies. △ Less

Submitted 30 November, 2023; originally announced December 2023.

Journal ref: Adv. Mater.2024, 2313629

V2C MXene-modified g-C3N4 for enhanced visible-light photocatalytic activity

Authors: Ruizheng Xu, Guiyu Wei, Zhemin Xie, Sijie Diao, Jianfeng Wen, Tao Tang, Li Jiang, Ming Li, Guanghui Hu

Abstract: Increasing the efficiency of charge transfer and separation efficiency of photogenerated carriers are still the main challenges in the field of semiconductor-based photocatalysts. Herein, we synthesized g-C3N4@V2C MXene photocatalyst by modifying g-C3N4 using V2C MXene. The prepared photocatalyst exhibited outstanding photocatalytic performance under visible light. The degradation efficiency of me… ▽ More Increasing the efficiency of charge transfer and separation efficiency of photogenerated carriers are still the main challenges in the field of semiconductor-based photocatalysts. Herein, we synthesized g-C3N4@V2C MXene photocatalyst by modifying g-C3N4 using V2C MXene. The prepared photocatalyst exhibited outstanding photocatalytic performance under visible light. The degradation efficiency of methyl orange by g-C3N4@V2C MXene photocatalyst was as high as 94.5%, which is 1.56 times higher than that by g-C3N4. This was attributed to the V2C MXene inhibiting the rapid recombination of photogenerated carriers and facilitating rapid transfer of photogenerated electrons (e) from g-C3N4 to MXene. Moreover, g-C3N4@V2C MXene photocatalyst showed good cycling stability. The photocatalytic performance was higher than 85% after three cycles. Experiments to capture free radicals revealed that superoxide radicals (02) are the main contributors to the photocatalytic activity. Thus, the proposed g-C3N4@V2C MXene photocatalyst is a promising visible-light catalyst. △ Less

Submitted 25 October, 2023; originally announced October 2023.

Comments: 20 pages, 9 figures

Ultralow power and shifting-discretized magnetic racetrack memory device driven by chirality switching and spin current

Authors: Shen Li, Xiaoyang Lin, **zhi Li, Suteng Zhao, Zhizhong Si, Guodong Wei, Bert Koopmans, Reinoud Lavrijsen, Weisheng Zhao

Abstract: Magnetic racetrack memory has significantly evolved and developed since its first experimental verification and is considered as one of the most promising candidates for future high-density on-chip solid state memory. However, the lack of a fast and precise magnetic domain wall (DW) shifting mechanism and the required extremely high DW motion (DWM) driving current both make the racetrack difficult… ▽ More Magnetic racetrack memory has significantly evolved and developed since its first experimental verification and is considered as one of the most promising candidates for future high-density on-chip solid state memory. However, the lack of a fast and precise magnetic domain wall (DW) shifting mechanism and the required extremely high DW motion (DWM) driving current both make the racetrack difficult to commercialize. Here, we propose a method for coherent DWM that is free from above issues, which is driven by chirality switching (CS) and an ultralow spin-orbit-torque (SOT) current. The CS, as the driving force of DWM, is achieved by the sign change of DM interaction which is further induced by a ferroelectric switching voltage. The SOT is used to break the symmetry when the magnetic moment is rotated to the Bloch direction. We numerically investigate the underlying principle and the effect of key parameters on the DWM through micromagnetic simulations. Under the CS mechanism, a fast (102 m/s), ultralow energy (5 attojoule), and precisely discretized DWM can be achieved. Considering that skyrmions with topological protection and smaller size are also promising for future racetrack, we similarly evaluate the feasibility of applying such a CS mechanism to a skyrmion. However, we find that the CS only causes it to "breathe" instead of moving. Our results demonstrate that the CS strategy is suitable for future DW racetrack memory with ultralow power consumption and discretized DWM. △ Less

Submitted 8 May, 2023; originally announced May 2023.

Data-based Polymer-Unit Fingerprint (PUFp): A Newly Accessible Expression of Polymer Organic Semiconductors for Machine Learning

Authors: Xinyue Zhang, Genwang Wei, Ye Sheng, Jiong Yang, Caichao Ye, Wenqing Zhang

Abstract: In the process of finding high-performance organic semiconductors (OSCs), it is of paramount importance in material development to identify important functional units that play key roles in material performance and subsequently establish substructure-property relationships. Herein, we describe a polymer-unit fingerprint (PUFp) generation framework. Machine learning (ML) models can be used to deter… ▽ More In the process of finding high-performance organic semiconductors (OSCs), it is of paramount importance in material development to identify important functional units that play key roles in material performance and subsequently establish substructure-property relationships. Herein, we describe a polymer-unit fingerprint (PUFp) generation framework. Machine learning (ML) models can be used to determine structure-mobility relationships by using PUFp information as structural input with 678 pieces of collected OSC data. A polymer-unit library consisting of 445 units is constructed, and the key polymer units for the mobility of OSCs are identified. By investigating the combinations of polymer units with mobility performance, a scheme for designing polymer OSC materials by combining ML approaches and PUFp information is proposed to not only passively predict OSC mobility but also actively provide structural guidance for new high-mobility OSC material design. The proposed scheme demonstrates the ability to screen new materials through pre-evaluation and classification ML steps and is an alternative methodology for applying ML in new high-mobility OSC discovery. △ Less

Submitted 3 November, 2022; originally announced November 2022.

Comments: 42 pages, 13 figures

Atomistic simulations of nanoindentation in single crystalline tungsten: The role of interatomic potentials

Authors: F. J. Dominguez-Gutierrez, P. Grigorev, A. Naghdi, Q. Q. Xu, J. Byggmastar, G. Y. Wei, T. D. Swinburne, S. Papanikolaou, M. J. Alava

Abstract: Computational modeling is usually applied to aid experimental exploration of advanced materials to better understand the fundamental plasticity mechanisms during mechanical testing. In this work, we perform Molecular dynamics (MD) simulations to emulate experimental room temperature spherical-nanoindentation of crystalline W matrices by different interatomic potentials: EAM, modified EAM, and a re… ▽ More Computational modeling is usually applied to aid experimental exploration of advanced materials to better understand the fundamental plasticity mechanisms during mechanical testing. In this work, we perform Molecular dynamics (MD) simulations to emulate experimental room temperature spherical-nanoindentation of crystalline W matrices by different interatomic potentials: EAM, modified EAM, and a recently developed machine learned based tabulated Gaussian approximation potential (tabGAP) for describing the interaction of W-W. Results show similarities between load displacements and stress-strain curves, regardless of the numerical model. However, a discrepancy is observed at early stages of the elastic to plastic deformation transition showing different mechanisms for dislocation nucleation and evolution, that is attributed to the difference of Burgers vector magnitudes, stacking fault and dislocation glide energies. Besides, contact pressure is investigated by considering large indenters sizes that provides a detailed analysis of screw and edge dislocations during loading process. Furthermore, the glide barrier of this kind of dislocations are reported for all the interatomic potentials showing that tabGAP model presents the most accurate results with respect to density functional theory calculations and a good qualitative agreement with reported experimental data △ Less

Submitted 11 December, 2022; v1 submitted 18 May, 2022; originally announced May 2022.

Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2

Authors: Xinhe Wang, Wei Yang, Wang Yang, Yuan Cao, Xiaoyang Lin, Guodong Wei, Haichang Lu, Peizhe Tang, Weisheng Zhao

Abstract: The phenomenon originating from spin-orbit coupling (SOC) provides energy-efficient strategies for spin manipulation and device applications. The broken inversion symmetry interface and resulting electric field induce a Rashba-type spin-orbit field (SOF), which has been demonstrated to generate spin-orbit torque for data storage applications. In this study, we found that spin flip** can be achie… ▽ More The phenomenon originating from spin-orbit coupling (SOC) provides energy-efficient strategies for spin manipulation and device applications. The broken inversion symmetry interface and resulting electric field induce a Rashba-type spin-orbit field (SOF), which has been demonstrated to generate spin-orbit torque for data storage applications. In this study, we found that spin flip** can be achieved by the valley-Zeeman SOF in monolayer WSe2 at room temperature, which manifests as a negative magnetoresistance in the vertical spin valve. Quantum transmission calculations based on an effective model near the K valley of WSe2 confirm the precessional spin transport of carriers under the giant SOF, which is estimated to be 650 T. In particular, the valley-Zeeman SOF-induced spin dynamics was demonstrated to be tunable with the layer number and stacking phase of WSe2 as well as the gate voltage, which provides a novel strategy for spin manipulation and can benefit the development of ultralow-power spintronic devices. △ Less

Submitted 5 May, 2022; originally announced May 2022.

Comments: 7 pages,3 figures

Journal ref: Applied Physics Reviews 9, 031402 (2022)

Logic Compatible High-Performance Ferroelectric Transistor Memory

Authors: Sourav Dutta, Huacheng Ye, Abhishek Khanna, Yuan-Chun Luo, Lillian Pentecost, Akif A. Khandker, Wriddhi Chakraborty, Gu-Yeon Wei, David Brooks, Michael Niemier, Xiaobo Sharon Hu, Shimeng Yu, Kai Ni, Suman Datta

Abstract: Silicon ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL) between ferroelectric gate stack and silicon channel suffers from high write voltage, limited write endurance and large read-after-write latency due to early IL breakdown and charge trap** and detrap** at the interface. We demonstrate low voltage, high speed memory operation with high write endurance usin… ▽ More Silicon ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL) between ferroelectric gate stack and silicon channel suffers from high write voltage, limited write endurance and large read-after-write latency due to early IL breakdown and charge trap** and detrap** at the interface. We demonstrate low voltage, high speed memory operation with high write endurance using an IL-free back-end-of-line (BEOL) compatible FeFET. We fabricate IL-free FeFETs with 28nm channel length and 126nm width under a thermal budget <400C by integrating 5nm thick Hf0.5Zr0.5O2 gate stack with amorphous Indium Tungsten Oxide (IWO) semiconductor channel. We report 1.2V memory window and read current window of 10^5 for program and erase, write latency of 20ns with +/-2V write pulses, read-after-write latency <200ns, write endurance cycles exceeding 5x10^10 and 2-bit/cell programming capability. Array-level analysis establishes IL-free BEOL FeFET as a promising candidate for logic-compatible high-performance on-chip buffer memory and multi-bit weight cell for compute-in-memory accelerators. △ Less

Submitted 23 May, 2021; originally announced May 2021.

Phase-Change Control of Interlayer Exchange Coupling

Authors: Xiaofei Fan, Guodong Wei, Xiaoyang Lin, Xinhe Wang, Zhizhong Si, Xueying Zhang, Qiming Shao, Stephane Mangin, Eric Fullerton, Lei Jiang, Weisheng Zhao

Abstract: Changing the interlayer exchange coupling between magnetic layers in-situ is a key issue of spintronics, as it allows for the optimization of properties that are desirable for applications, including magnetic sensing and memory. In this paper, we utilize the phase change material VO2 as a spacer layer to regulate the interlayer exchange coupling between ferromagnetic layers with perpendicular magn… ▽ More Changing the interlayer exchange coupling between magnetic layers in-situ is a key issue of spintronics, as it allows for the optimization of properties that are desirable for applications, including magnetic sensing and memory. In this paper, we utilize the phase change material VO2 as a spacer layer to regulate the interlayer exchange coupling between ferromagnetic layers with perpendicular magnetic anisotropy. The successful growth of ultra-thin (several nanometres) VO2 films is realized by sputtering at room temperature, which further enables the fabrication of [Pt/Co]2/VO2/[Co/Pt]2 multilayers with distinct interfaces. Such a magnetic multilayer exhibits an evolution from antiferromagnetic coupling to ferromagnetic coupling as the VO2 undergoes a phase change. The underlying mechanism originates from the change in the electronic structure of the spacer layer from an insulating to a metallic state. As a demonstration of phase change spintronics, this work may reveal the great potential of material innovations for next-generation spintronics. △ Less

Submitted 20 August, 2019; v1 submitted 24 July, 2019; originally announced July 2019.

Journal ref: Matter, 2020 (online)

Bandgap closing at the screw dislocations of WS2 spirals

Authors: Xin Zhang, Kaige Hu, Yifei Li, Guohua Wei, Nathaniel P. Stern, Min Pan, Xiao Li, Hong Luo, Lei Liu

Abstract: Van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) materials are emerging as one class of quantum materials holding novel optical and electronic properties. In particular, the bandgap tunability attractive for nanoelectronics technology have been observed up to 1.1 eV when applying dielectric screening or grain boundary engineering. Here we present the experimental observation of… ▽ More Van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) materials are emerging as one class of quantum materials holding novel optical and electronic properties. In particular, the bandgap tunability attractive for nanoelectronics technology have been observed up to 1.1 eV when applying dielectric screening or grain boundary engineering. Here we present the experimental observation of bandgap closing at the center of the screw dislocation-driven WS2 spiral pyramid by means of scanning tunneling spectroscopy, which is validated by first-principle calculations. The observed giant bandgap modulation is attributed to the presence of dangling bonds induced by the W-S broken and the enhanced localized stress in the core of the dislocation. Achieving this metallic state and the consequent vertical conducting channel presents a pathway to 3D-interconnected vdW heterostructure devices based on emergent semiconducting TMDCs. △ Less

Submitted 6 August, 2019; v1 submitted 17 June, 2019; originally announced June 2019.

Comments: need major polishing

Graphene Quantum Strain Transistors

Authors: A. C. McRae, G. Wei, A. R. Champagne

Abstract: There is a wide range of science and applications accessible via the strain engineering of quantum transport in 2D materials. We propose a realistic experimental platform for uniaxial strain engineering of ballistic charge transport in graphene. We then develop an applied theoretical model, based on this platform, to calculate charge conductivity and demonstrate graphene quantum strain transistors… ▽ More There is a wide range of science and applications accessible via the strain engineering of quantum transport in 2D materials. We propose a realistic experimental platform for uniaxial strain engineering of ballistic charge transport in graphene. We then develop an applied theoretical model, based on this platform, to calculate charge conductivity and demonstrate graphene quantum strain transistors (GQSTs). We define GQSTs as mechanically strained ballistic graphene transistors with on/off conductivity ratios $> 10^{4}$, and which can be operated via modest gate voltages. Such devices would permit excellent transistor operations in pristine graphene, where there is no band gap. We consider all dominant uniaxial strain effects on conductivity, while including experimental considerations to guide the realization of the proposal. We predict multiple strain-tunable transport signatures, and demonstrate that a broad range of realistic device parameters lead to robust GQSTs. These devices could find applications in flexible electronic transistors, strain sensors, and valleytronics. △ Less

Submitted 25 September, 2018; originally announced September 2018.

Journal ref: Phys. Rev. Applied 11, 054019 (2019)

Large phase-transition-induced magnetic anisotropy change in (Co/Pt)2/VO2 heterostructure

Authors: Guodong Wei, Xiaoyang Lin, Zhizhong Si, Yanxue Chen, Sylvain Eimer, Weisheng Zhao

Abstract: We report the phase-transition controlled magnetic anisotropy modulation in the (Co/Pt)2/VO2 heterostructure, where VO2 is introduced into the system to applied an interfacial strain by its metal-insulator transition. A large reversible modulation of the perpendicular magnetic anisotropy (PMA) reaching 38 kJ/m3 is observed during this process. The calculated energy density variation of interfacial… ▽ More We report the phase-transition controlled magnetic anisotropy modulation in the (Co/Pt)2/VO2 heterostructure, where VO2 is introduced into the system to applied an interfacial strain by its metal-insulator transition. A large reversible modulation of the perpendicular magnetic anisotropy (PMA) reaching 38 kJ/m3 is observed during this process. The calculated energy density variation of interfacial anisotropy reaches 100 mJ/m2, which shows significant advantage over traditional modulation strategies. Further experimental results including magnetization change versus temperature, strain buffered modulation and pre-strained sample comparison prove that the interfacial coupling between VO2 and PMA layers plays a crucial role in this modulation. This work, demonstrating the great potential of phase-transition material in efficient magnetic anisotropy modulation, would benefit the exploration for low-power consumption devices. △ Less

Submitted 18 September, 2018; originally announced September 2018.

Journal ref: APPLIED PHYSICS LETTERS, 2019, 114(1):012407

Optical control of magnetism in NiFe/VO2 heterostructures

Authors: Guodong Wei, Xiaoyang Lin, Zhizhong Si, Dong Wang, Xinhe Wang, Kai Liu, Kaili Jiang, Zhaohao Wang, Na Lei, Yanxue Chen, Stephane Mangin, Weisheng Zhao

Abstract: Optical methods for magnetism manipulation have been considered as a promising strategy for ultralow-power and ultrahigh-speed spin switches, which becomes a hot spot in the field of spintronics. However, a widely applicable and efficient method to combine optical operation with magnetic modulation is still highly desired. Here, the strongly correlated electron material VO2 is introduced to realiz… ▽ More Optical methods for magnetism manipulation have been considered as a promising strategy for ultralow-power and ultrahigh-speed spin switches, which becomes a hot spot in the field of spintronics. However, a widely applicable and efficient method to combine optical operation with magnetic modulation is still highly desired. Here, the strongly correlated electron material VO2 is introduced to realize phase-transition based optical control of the magnetism in NiFe. The NiFe/VO2 bilayer heterostructure features appreciable modulations in electrical conductivity (55%), coercivity (60%), and magnetic anisotropy (33.5%). Further analyses indicate that interfacial strain coupling plays a crucial role in this modulation. Utilizing this optically controlled magnetism modulation feature, programmable Boolean logic gates (AND, OR, NAND, NOR, XOR, NXOR and NOT) for high-speed and low-power data processing are demonstrated based on this engineered heterostructure. As a demonstration of phase-transition spintronics, this work may pave the way for next-generation electronics in the post-Moore era. △ Less

Submitted 15 October, 2018; v1 submitted 7 May, 2018; originally announced May 2018.

Journal ref: Advanced Quantum Technologies, 2020, 3(3):1900104

Liquid crystal self-assembly of upconversion nanorods enriched by depletion forces for mesostructured material preparation

Authors: Yong Xie, Yuanyuan Li, Guoqing Wei, Qingkun Liu, Haridas Mundoor, Ziyu Chen, Ivan I. Smalyukh

Abstract: Monodisperse rod-like colloidal particles are known for spontaneously forming both nematic and smectic liquid crystal phases, but their self-assembly was typically exploited from the fundamental soft condensed matter physics perspective. Here we demonstrate that depletion interactions, driven by non-adsorbing polymers like dextran and surfactants, can be used to enrich self-organization of photon-… ▽ More Monodisperse rod-like colloidal particles are known for spontaneously forming both nematic and smectic liquid crystal phases, but their self-assembly was typically exploited from the fundamental soft condensed matter physics perspective. Here we demonstrate that depletion interactions, driven by non-adsorbing polymers like dextran and surfactants, can be used to enrich self-organization of photon-upconversion nanorods into orientationally ordered nematic and smectic-like membrane colloidal superstructures. We study thermodynamic phase diagrams and demonstrate polarization-dependent photon upconversion exhibited by the ensuing composites, which arises from the superposition of unique properties of the solid nanostructures and the long-range ordering enabled by liquid crystalline self-organization. Finally, we discuss how our method of utilizing self-assembly due to the steric and electrostatic interactions, along with attractive depletion forces, can enable technological uses of lyotropic colloidal liquid crystals and mesostructured composite materials enabled by them, even when they are formed by anisotropic nanoparticles with relatively small aspect ratios. △ Less

Submitted 28 December, 2017; originally announced December 2017.

Comments: 30 pages, 5 figures in maintext, 6 figures in supporting information

Width-dependent Photoluminescence and Anisotropic Raman Spectroscopy from Monolayer MoS$_2$ Nanoribbons

Authors: Guohua Wei, Erik J. Lenferink, David A. Czaplewski, Nathaniel P. Stern

Abstract: Single layers of transition metal dichalcogenides such as MoS$_2$ are direct bandgap semiconductors with optical and electronic properties distinct from multilayers due to strong vertical confinement. Despite the fundamental monolayer limit of thickness, the electronic structure of isolated layers can be further tailored with lateral degrees of freedom in nanostructures such as quantum dots or nan… ▽ More Single layers of transition metal dichalcogenides such as MoS$_2$ are direct bandgap semiconductors with optical and electronic properties distinct from multilayers due to strong vertical confinement. Despite the fundamental monolayer limit of thickness, the electronic structure of isolated layers can be further tailored with lateral degrees of freedom in nanostructures such as quantum dots or nanoribbons. Although one-dimensionally confined monolayer semiconductors are predicted to have interesting size- and edge-dependent properties useful for spintronics applications, experiments on the opto-electronic features of monolayer transition metal dichalcogenide nanoribbons is limited. We use nanolithography to create monolayer MoS$_2$ nanoribbons with lateral sizes down to 20 nm. The Raman spectra show polarization anisotropy and size-dependent intensity. The nanoribbons prepared with this technique show reduced susceptibility to edge defects and emit photoluminescence with size-dependent energy that can be understood from a phenomenological model. Fabrication of monolayer nanoribbons with strong exciton emission can facilitate exploration of low-dimensional opto-electronic devices with controllable properties. △ Less

Submitted 12 September, 2017; originally announced September 2017.

Comments: 7 pages, 4 figures, and supplementary information pdf

The identification of the dominant donors in low temperature grown InPBi materials

Authors: G. N. Wei, D. Xing, Q. Feng, W. G. Luo, Y. Y. Li, K. Wang, L. Y. Zhang, W. W. Pan, S. M. Wang, S. Y. Yang, K. Y. Wang

Abstract: Combined with magnetotransport measurements and first-principles calculations, we systematically investigated the effects of Bi incorporation on the electrical properties of the undoped InP1-xBix epilayers with 0<x<2.41%. The Hall-bar measurements reveal a dominant n-type conductivity of the InPBi samples. The electron concentrations are found to decrease firstly as x increases up to x=1.83%, and… ▽ More Combined with magnetotransport measurements and first-principles calculations, we systematically investigated the effects of Bi incorporation on the electrical properties of the undoped InP1-xBix epilayers with 0<x<2.41%. The Hall-bar measurements reveal a dominant n-type conductivity of the InPBi samples. The electron concentrations are found to decrease firstly as x increases up to x=1.83%, and then increase again with further increasing Bi composition, whiles the electron mobility shows an inverse variation to the electron concentration. First-principle calculations suggest that both the phosphorus antisites and vacancy defects are the dominant donors responsible for the high electron concentration. And their defect concentrations show different behaviors as Bi composition x increases, resulting in a nonlinear relationship between electron concentration and Bi composition in InPBi alloys. △ Less

Submitted 29 March, 2016; originally announced March 2016.

Comments: 17 pages, 4 figures, 1 table

Bismuth-content dependent of the polarized Raman spectra of the InPBi alloys

Authors: G. N. Wei, T. Q. Hai, Q. Feng, D. Xing, W. G. Luo, K. Wang, L. Y. Zhang, S. M. Wang, K. Y. Wang

Abstract: We have systematically investigated the optical properties of the InP1-xBix ternary alloys with 0<x<2.46%, using high resolution polarized Raman scattering measurement. Both InP-like and InBi-like optical vibration modes (LO) were identified in all the samples, suggesting most of the Bi-atoms are incorporated into the lattice sites to substitute P-atoms. And the intensity of the InBi-like Raman mo… ▽ More We have systematically investigated the optical properties of the InP1-xBix ternary alloys with 0<x<2.46%, using high resolution polarized Raman scattering measurement. Both InP-like and InBi-like optical vibration modes (LO) were identified in all the samples, suggesting most of the Bi-atoms are incorporated into the lattice sites to substitute P-atoms. And the intensity of the InBi-like Raman modes increase exponentially as Bi-content increasing. Linearly red-shift of the InP-like longitudinal optical vibration modes was observed to be 1.1 cm-1 of percent Bi, while that of the InP-like optical vibration overtones (2LO) were nearly doubled. In addition, through comparing the difference between the Z(X,X)Z and Z(X,Y)Z Raman spectra, Longitudinal Optical Plasmon Coupled (LOPC) modes are identified in all the samples, and their intensities are found to be proportional to the electron concentrations. △ Less

Submitted 14 December, 2015; originally announced December 2015.

Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots

Authors: Guohua Wei, David A. Czaplewski, Erik J. Lenferink, Teodor K. Stanev, Il Woong Jung, Nathaniel P. Stern

Abstract: Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties can provide further degrees of freedom requisite for quantum information and sp… ▽ More Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties can provide further degrees of freedom requisite for quantum information and spintronics. When seeking to combine these material features into QD structures, however, confinement can cause hybridization that inhibits the robustness of these emergent properties for insertion into quantum devices. Here, we show that a new class of laterally-confined materials, monolayer MoS$_2$ QDs, can be created through top-down nanopatterning of an atomically-thin two-dimensional semiconductor so that they exhibit the same valley polarization as in a continuous monolayer sheet. Semiconductor-compatible nanofabrication process allows for these low-dimensional materials to be integrated into complex systems, an important feature for advancing quantum information applications. The inherited bulk spin and valley properties, the size dependence of excitonic energies, and the ability to fabricate MoS$_2$ QDs using semiconductor-compatible processing suggest that monolayer semiconductor QDs have the potential to be multimodal building blocks of integrated quantum information and spintronics systems. △ Less

Submitted 30 October, 2015; originally announced October 2015.

Comments: 13 pages, 4 figures

Journal ref: Scientific Reports 7, Article number: 3324 (2017)

Longitudinal Spin Seebeck Effect in Silver Strip on CoFe Film

Authors: Y. Sheng, M. Y. Yang, Y. Cao, K. M. Cai, G. N. Wei, G. H. Yu, B. Zhang, X. Q. Ma, K. Y. Wang

Abstract: We report the experimental observation of the spin Seebeck effect (SSE) in Ag/CoFe noble metal/magnetic metal bilayers with a longitudinal structure. Thermal voltages jointly generated by the anomalous Nernst effect (ANE) and the SSE were detected across the Ag/CoFe/Cu strip with a perpendicular thermal gradient. To effectively separate the SSE and the ANE part of the thermal voltages, we compared… ▽ More We report the experimental observation of the spin Seebeck effect (SSE) in Ag/CoFe noble metal/magnetic metal bilayers with a longitudinal structure. Thermal voltages jointly generated by the anomalous Nernst effect (ANE) and the SSE were detected across the Ag/CoFe/Cu strip with a perpendicular thermal gradient. To effectively separate the SSE and the ANE part of the thermal voltages, we compared the experimental results between the Ag/CoFe/Cu strip and Cu/CoFe/Cu strip, where two samples processed with the heating power instead of the temperature difference through the thin CoFe film. The respective contributions of the ANE and SSE to thermal voltage were determined, and they have the ratio of 4:1. The spin current injected through CoFe/Ag interface is calculated to be 1.76 mA/W. △ Less

Submitted 28 October, 2015; originally announced October 2015.

Silicon-nitride photonic circuits interfaced with monolayer MoS$_2$

Authors: Guohua Wei, Teodor K. Stanev, David A. Czaplewski, Il Woong Jung, Nathaniel P. Stern

Abstract: We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that… ▽ More We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range. △ Less

Submitted 5 June, 2015; originally announced June 2015.

Comments: 8 pages, 4 figures

Journal ref: Appl. Phys. Lett. 107, 091112 (2015)

Magnetic Coupling in Ferromagnetic Semiconductor GaMnAs/AlGaMnAs Bilayer Devices

Authors: Y. F. Cao, Yanyong Li, Yuanyuan Li, G. N. Wei, Y. Ji, K. Y. Wang

Abstract: We carefully investigated the ferromagnetic coupling in the as-grown and annealed ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices. We observed that the magnetic interaction between the two layers strongly affects the magnetoresistance of the GaMnAs layer with applying out of plane magnetic field. After low temperature annealing, the magnetic easy axis of the AlGaMnAs layer switches fro… ▽ More We carefully investigated the ferromagnetic coupling in the as-grown and annealed ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices. We observed that the magnetic interaction between the two layers strongly affects the magnetoresistance of the GaMnAs layer with applying out of plane magnetic field. After low temperature annealing, the magnetic easy axis of the AlGaMnAs layer switches from out of plane into in-plane and the interlayer coupling efficiency is reduced from up to 0.6 to less than 0.4. However, the magnetic coupling penetration depth for the annealed device is twice that of the as-grown bilayer device. △ Less

Submitted 23 January, 2015; originally announced January 2015.

Comments: 10 pages, 4 figures

Journal ref: Science China 57(2014)1471

Phase diagram of microcavity polariton condensates with a harmonic potential trap

Authors: Ting-Wei Chen, Min g-Dar Wei, Szu-Cheng Cheng, Wen-Feng Hsieh

Abstract: We theoretically explore the phase transition in inhomogeneous exciton-polariton condensates with variable pum** conditions. Through Bogoliubov excitations to the radial-symmetric solutions of complex Gross-Pitaevskii equation, we determine not only the bifurcation of stable and unstable modes by the sign of fluid compressibility but also two distinct stable modes which are characterized by the… ▽ More We theoretically explore the phase transition in inhomogeneous exciton-polariton condensates with variable pum** conditions. Through Bogoliubov excitations to the radial-symmetric solutions of complex Gross-Pitaevskii equation, we determine not only the bifurcation of stable and unstable modes by the sign of fluid compressibility but also two distinct stable modes which are characterized by the elementary excitations and the stability of singly quantized vortex. One state is the quasi-condensate BKT phase with Goldstone flat dispersion; the other state is the localized-BEC phase which exhibits linear-type dispersion and has an excitation energy gap at zero momentum. △ Less

Submitted 11 September, 2013; originally announced September 2013.

Comments: 17 pages, 4 figures

Anisotropic Current-Controlled Magnetization Reversal in the Ferromagnetic Semiconductor (Ga,Mn)As

Authors: Yuanyuan Li, Y. F. Cao, G. N. Wei, Yanyong Li, Y. Ji, K. Y. Wang, K. W. Edmonds, R. P. Campion, A. W. Rushforth, C. T. Foxon, B. L. Gallagher

Abstract: Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the dir… ▽ More Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the direction and magnitude of the current is determined from the shifts in the magnetization switching angle. We find that the strain induced effective magnetic field is about three times as large as the Rashba induced magnetic field in our GaMnAs devices. △ Less

Submitted 8 March, 2013; originally announced March 2013.

Comments: 11 pages,3 figures, submitted to Appl. Phys. Lett

Journal ref: Applied Physics Letters 103, 022401 (2013)

Thermoelectric effect in a parallel double quantum dot structure

Authors: Wei-Jiang Gong, Guo-Zhu Wei

Abstract: We discuss the thermoelectric properties assisted by the Fano effect of a parallel double quantum dot (QD) structure. By adjusting the couplings between the QDs and leads, we facilitate the nonresonant and resonant channels for the Fano interference. It is found that at low temperature, Fano lineshapes appear in the electronic and thermal conductance spectra, which can also be reversed by an appli… ▽ More We discuss the thermoelectric properties assisted by the Fano effect of a parallel double quantum dot (QD) structure. By adjusting the couplings between the QDs and leads, we facilitate the nonresonant and resonant channels for the Fano interference. It is found that at low temperature, Fano lineshapes appear in the electronic and thermal conductance spectra, which can also be reversed by an applied local magnetic flux with its phase factor $φ=π$. And, the Fano effect contributes decisively to the enhancement of thermoelectric efficiency. However, at the same temperature, the thermoelectric effect in the case of $φ=π$ is much more apparent, compared with the case of zero magnetic flux. By the concept of Feynman path, we analyze the difference between the quantum interferences in the cases of $φ=0$ and $φ=π$. It is seen that in the absence of magnetic flux the Fano interference originates from the quantum interference among infinite-order Feynman paths, but it occurs only between two lowest-order Feynman paths when $φ=π$. The increase of temperature inevitably destroys the electron coherent transmission in each paths. So, in the case of zero magnetic field, the thermoelectric effect contributed by the Fano interference is easy to weaken by a little increase of temperature. △ Less

Submitted 20 December, 2011; v1 submitted 17 December, 2011; originally announced December 2011.

Comments: 8 pages, 4 figures

Three-terminal triple-quantum-dot ring as a charge and spin current rectifier

Authors: Weijiang Gong, Hui Li, Guozhu Wei

Abstract: Electronic transport through a triple-quantum-dot ring with three terminals is theoretically studied. By introducing local Rashba spin-orbit interaction on an individual quantum dot, we find that the spin bias in one terminal drives apparent charge currents in the other terminals, accompanied by the similar amplitude and opposite directions of them. Meanwhile, it shows that the characteristics of… ▽ More Electronic transport through a triple-quantum-dot ring with three terminals is theoretically studied. By introducing local Rashba spin-orbit interaction on an individual quantum dot, we find that the spin bias in one terminal drives apparent charge currents in the other terminals, accompanied by the similar amplitude and opposite directions of them. Meanwhile, it shows that the characteristics of the spin currents induced by the spin bias are notable. When a magnetic flux is applied through this ring, we see its nontrivial role in the manipulation of the charge and spin currents. With the obtained results, we propose this structure to be a prototype of a charge and spin current rectifier. △ Less

Submitted 14 August, 2010; originally announced August 2010.

Comments: 6 pages, 3 figures

Detection of spin bias in four-terminal quantum-dot ring

Authors: Weijiang Gong, Hui Li, Sha Zhang, Yu Han, Guozhu Wei

Abstract: In this work, we show that in a four-quantum-dot ring, via introducing a local Rashba spin-orbit interaction the spin bias in the transverse terminals can be detected by observing the charge currents in the longitudinal probes. It is found that due to the Rashba interaction, the quantum interference in this system becomes spin-dependent and the opposite-spin currents induced by the spin bias can… ▽ More In this work, we show that in a four-quantum-dot ring, via introducing a local Rashba spin-orbit interaction the spin bias in the transverse terminals can be detected by observing the charge currents in the longitudinal probes. It is found that due to the Rashba interaction, the quantum interference in this system becomes spin-dependent and the opposite-spin currents induced by the spin bias can present different magnitudes, so charge currents emerge. Besides, the charge currents rely on both the magnitude and spin polarization direction of the spin bias. It is believed that this method provides an electrical but practical scheme to detect the spin bias (or the spin current). △ Less

Submitted 30 January, 2010; originally announced February 2010.

Comments: 6 pages, 5 figures

Electronic transport through a double-quantum-dot Aharonov-Bohm interference device with impurities

Authors: Wei-Jiang Gong, Xue-Feng Xie, Yu Han, Guo-Zhu Wei

Abstract: The impurity-related electron transport through a double quantum dot (QD) Aharonov-Bohm (AB) interferometer is theoretically studied, by considering impurities coupled to the QDs in the interferometer arms. When investigating the linear conductance spectra \emph{vs} the impurity levels, we show that the impurities influence the electron transport in a nontrivial way, since their suppressing or e… ▽ More The impurity-related electron transport through a double quantum dot (QD) Aharonov-Bohm (AB) interferometer is theoretically studied, by considering impurities coupled to the QDs in the interferometer arms. When investigating the linear conductance spectra \emph{vs} the impurity levels, we show that the impurities influence the electron transport in a nontrivial way, since their suppressing or enhancing the electron tunneling. A presented single-level impurity leads to the appearance of Fano lineshapes in the conductance spectra in the absence of magnetic flux, with the positions of Fano antiresonances determined by both the impurity-QD couplings and the QD levels separated from the Fermi level, whereas when a magnetic flux is introduced with the the phase factor $φ=π$ the impurity-driven Breit-Wigner lineshapes appear in the conductance curves. Besides, the nonlocal impurities alter the period of conductance change \emph{vs} the magnetic flux. The multi-level impurities indeed complicate the electron transport, but for the cases of two identical local impurities coupled to the respective QDs with uniform couplings or a nonlocal impurity coupled to both QDs uniformly, the antiresonances are only relevant to the impurity levels. When many-body effect is managed within the second-order approximation, we also find the important role of the Coulomb interaction in modifying the electron transport. △ Less

Submitted 22 December, 2009; originally announced December 2009.

Comments: 17 pages, 13 figures

Spin-bias driven electron properties of a triple-quantum-dot ring

Authors: Weijiang Gong, Xuefeng Xie, Yu Han, Guozhu Wei

Abstract: Electron transport through a three-electrode triple-quantum-dot ring with the source electrode of spin-dependent splitting of chemical potentials (spin bias) is theoretically investigated. We find clear charge and spin currents in the drain electrodes driven by the spin bias, despite the absence of charge bias between the source and drain electrodes, and their directions and amplitudes can be ad… ▽ More Electron transport through a three-electrode triple-quantum-dot ring with the source electrode of spin-dependent splitting of chemical potentials (spin bias) is theoretically investigated. We find clear charge and spin currents in the drain electrodes driven by the spin bias, despite the absence of charge bias between the source and drain electrodes, and their directions and amplitudes can be adjusted by altering the structure parameters or magnetic field. The distinct characteristics of spin-bias driven persistent charge and spin currents in the ring are also shown. When an appropriate charge bias is applied, the single-spin electron motion can be achieved in this structure. △ Less

Submitted 23 September, 2009; originally announced September 2009.

Coulomb-modified Fano interference in a double quantum dot Aharonov-Bohm ring

Authors: Weijiang Gong, Xuefeng Xie, Guozhu Wei

Abstract: In this paper, the Coulomb-induced changes of Fano interference in electronic transport through a double quantum dot Aharonov-Bohm ring are discussed. It is found that the Coulomb interaction in the quantum dot in the reference channel can remarkably modify the Fano interference, including the increase or decrease of the symmetry of the Fano lineshape, as well as the inversion of the Fano linesh… ▽ More In this paper, the Coulomb-induced changes of Fano interference in electronic transport through a double quantum dot Aharonov-Bohm ring are discussed. It is found that the Coulomb interaction in the quantum dot in the reference channel can remarkably modify the Fano interference, including the increase or decrease of the symmetry of the Fano lineshape, as well as the inversion of the Fano lineshape, which is dependent on the appropriate strength of the Coulomb interaction. %But the nonzero Coulomb interaction %only leads to the emergence of two-group Fano lineshapes. When both the quantum dot levels are adjustable, the Coulomb-induced splitting of the nonresonant channel leads to the destruction of the Fano interference; whereas two blurry Fano lineshapes may appear in the conductance spectra when the many-body effect in the dot of the resonant channel is also considered. Interestingly, in the absence of magnetic field, when the different-strength electron interactions make one pair of levels of the dots in different channels the same, the corresponding resonant state keeps vacuum despite the adjustment of quantum dot levels. △ Less

Submitted 17 September, 2009; originally announced September 2009.

Comments: 11 pages, 6 figures

Decoupling and antiresonance in electronic transport through a quantum dot chain embodied in an Aharonov-Bohm interferometer

Authors: Yu Han, Weijiang Gong, Haina Wu, Guozhu Wei

Abstract: Electronic transport through a quantum dot chain embodied in an Aharonov-Bohm interferometer is theoretically investigated. In such a system, it is found that only for the configurations with the same-numbered quantum dots side-coupled to the quantum dots in the arms of the interferometer, some molecular states of the quantum dot chain decouple from the leads. Namely, in the absence of magnetic… ▽ More Electronic transport through a quantum dot chain embodied in an Aharonov-Bohm interferometer is theoretically investigated. In such a system, it is found that only for the configurations with the same-numbered quantum dots side-coupled to the quantum dots in the arms of the interferometer, some molecular states of the quantum dot chain decouple from the leads. Namely, in the absence of magnetic flux all odd molecular states decouple from the leads, but all even molecular states decouple from the leads when an appropriate magnetic flux is introduced. Interestingly, the antiresonance position in the electron transport spectrum is independent of the change of the decoupled molecular states. In addition, when considering the many-body effect within the second-order approximation, we show that the emergence of decoupling gives rise to the apparent destruction of electron-hole symmetry. By adjusting the magnetic flux through either subring, some molecular states decouple from one lead but still couple to the other, and then some new antiresonances occur. △ Less

Submitted 12 February, 2009; originally announced February 2009.

Comments: 7 pages, 7 figures

Rashba-induced transverse pure spin currents in a four-terminal quantum dot ring

Authors: Weijiang Gong, Yu Han, Guozhu Wei, Yisong Zheng

Abstract: By applying a local Rashba spin-orbit interaction on an individual quantum dot of a four-terminal four-quantum-dot ring and introducing a finite bias between the longitudinal terminals, we theoretically investigate the charge and spin currents in the transverse terminals. It is found that when the quantum dot levels are separate from the chemical potentials of the transverse terminals, notable p… ▽ More By applying a local Rashba spin-orbit interaction on an individual quantum dot of a four-terminal four-quantum-dot ring and introducing a finite bias between the longitudinal terminals, we theoretically investigate the charge and spin currents in the transverse terminals. It is found that when the quantum dot levels are separate from the chemical potentials of the transverse terminals, notable pure spin currents appear in the transverse terminals with the same amplitude and opposite polarization directions. Besides, the polarization directions of such pure spin currents can be inverted by altering structure parameters, i.e., the magnetic flux, the bias voltage, and the values of quantum dot levels with respect to the chemical potentials of the transverse terminals. △ Less

Submitted 10 January, 2009; originally announced January 2009.

Comments: 4 pages, 3 figures, Submitted to nanotechnology

Journal ref: Solid State Communications 149 (2009) 1831

Decoupling and antiresonance in a quantum dot chain with two neighboring dots coupled to both leads

Authors: Yu Han, Weijiang Gong, Guozhu Wei

Abstract: Electron transport through a quantum dot chain with two neighboring dots coupled to both leads is theoretically studied. In such a system, it is found that only for the even-numbered quantum dot structure with the same-number quantum dots coupled to each connecting dot, some eigenstates of the quantum dots decouple from the leads. Namely, all odd eigenstates decouple from the leads in the absenc… ▽ More Electron transport through a quantum dot chain with two neighboring dots coupled to both leads is theoretically studied. In such a system, it is found that only for the even-numbered quantum dot structure with the same-number quantum dots coupled to each connecting dot, some eigenstates of the quantum dots decouple from the leads. Namely, all odd eigenstates decouple from the leads in the absence of magnetic flux, but all even eigenstates will decouple from the leads when a magnetic flux is introduced. In addition, by adjusting the magnetic fluxes through any subring, some eigenstates decouple from one lead but still couple to the other, and then some new antiresonances occur. △ Less

Submitted 29 October, 2008; originally announced October 2008.

Comments: 8 pages, 6 figures

Modelling Electron Spin Accumulation in a Metallic Nanoparticle

Authors: Y. G. Wei, C. E. Malec, D. Davidović

Abstract: A model describing spin-polarized current via discrete energy levels of a metallic nanoparticle, which has strongly asymmetric tunnel contacts to two ferromagnetic leads, is presented. In absence of spin-relaxation, the model leads to a spin-accumulation in the nanoparticle, a difference ($Δμ$) between the chemical potentials of spin-up and spin-down electrons, proportional to the current and… ▽ More A model describing spin-polarized current via discrete energy levels of a metallic nanoparticle, which has strongly asymmetric tunnel contacts to two ferromagnetic leads, is presented. In absence of spin-relaxation, the model leads to a spin-accumulation in the nanoparticle, a difference ($Δμ$) between the chemical potentials of spin-up and spin-down electrons, proportional to the current and the Julliere's tunnel magnetoresistance. Taking into account an energy dependent spin-relaxation rate $Ω(ω)$, $Δμ$ as a function of bias voltage ($V$) exhibits a crossover from linear to a much weaker dependence, when $|e|Ω(Δμ)$ equals the spin-polarized current through the nanoparticle. Assuming that the spin-relaxation takes place via electron-phonon emission and Elliot-Yafet mechanism, the model leads to a crossover from linear to $V^{1/5}$ dependence. The crossover explains recent measurements of the saturation of the spin-polarized current with $V$ in Aluminum nanoparticles, and leads to the spin-relaxation rate of $\approx 1.6 MHz$ in an Aluminum nanoparticle of diameter $6nm$, for a transition with an energy difference of one level spacing. △ Less

Submitted 12 September, 2008; originally announced September 2008.

Comments: 37 pages, 7 figures

Journal ref: Phys. Rev. B 78, 035435, (2008)

Saturation of Spin-Polarized Current in Nanometer Scale Aluminum Grains

Authors: Y. G. Wei, C. E. Malec, D. Davidović

Abstract: We describe measurements of spin-polarized tunnelling via discrete energy levels of single Aluminum grains. In high resistance samples ($\sim GΩ$), the spin-polarized tunnelling current rapidly saturates as a function of the bias voltage. This indicates that spin-polarized current is carried only via the ground state and the few lowest in energy excited states of the grain. At the saturation vol… ▽ More We describe measurements of spin-polarized tunnelling via discrete energy levels of single Aluminum grains. In high resistance samples ($\sim GΩ$), the spin-polarized tunnelling current rapidly saturates as a function of the bias voltage. This indicates that spin-polarized current is carried only via the ground state and the few lowest in energy excited states of the grain. At the saturation voltage, the spin-relaxation rate $T_1^{-1}$ of the highest excited states is comparable to the electron tunnelling rate: $T_1^{-1}\approx 1.5\cdot 10^6 s^{-1}$ and $10^7s^{-1}$ in two samples. The ratio of $T_1^{-1}$ to the electron-phonon relaxation rate is in agreement with the Elliot-Yafet scaling, an evidence that spin-relaxation in Al grains is governed by the spin-orbit interaction. △ Less

Submitted 29 October, 2007; v1 submitted 5 March, 2007; originally announced March 2007.

Comments: 5 pages, 4 figures

Mesoscopic Resistance Fluctuations in Cobalt Nanoparticles

Authors: Y. G. Wei, X. Y. Liu, L. Y. Zhang, D. Davidović

Abstract: We present measurements of mesoscopic resistance fluctuations in cobalt nanoparticles and study how the fluctuations with bias voltage, bias fingerprints, respond to magnetization reversal processes. Bias fingerprints rearrange when domains are nucleated or annihilated. The domain-wall causes an electron wavefunction phase-shift of $\approx 5π$. The phase-shift is not caused by the Aharonov-Bohm… ▽ More We present measurements of mesoscopic resistance fluctuations in cobalt nanoparticles and study how the fluctuations with bias voltage, bias fingerprints, respond to magnetization reversal processes. Bias fingerprints rearrange when domains are nucleated or annihilated. The domain-wall causes an electron wavefunction phase-shift of $\approx 5π$. The phase-shift is not caused by the Aharonov-Bohm effect; we explain how it arises from the mistracking effect, where electron spins lag in orientation with respect to the moments inside the domain-wall. Dephasing time in Co at $0.03K$ is short, $τ_φ\sim ps$, which we attribute to the strong magnetocrystalline anisotropy. △ Less

Submitted 26 April, 2006; v1 submitted 16 September, 2005; originally announced September 2005.

Comments: 5 pages 3 figs colour

Journal ref: Phys. Rev. Lett. 96, 146803 (2006)

Spin-Polarized Electron Transport through Nanometer-Scale Al Grains

Authors: L. Y. Zhang, C. Y. Wang, Y. G. Wei, X. Y. Liu, D. Davidovic

Abstract: We investigate spin-polarized electron tunnelling through ensembles of nanometer scale Al grains embedded between two Co-reservoirs at 4.2K, and observe tunnelling-magnetoresistance (TMR) and effects from spin-precession in the perpendicular applied magnetic field (the Hanle effect). The spin-coherence time ($T_2^\star$) measured using the Hanle effect is of order $ns$. The dephasing is attribut… ▽ More We investigate spin-polarized electron tunnelling through ensembles of nanometer scale Al grains embedded between two Co-reservoirs at 4.2K, and observe tunnelling-magnetoresistance (TMR) and effects from spin-precession in the perpendicular applied magnetic field (the Hanle effect). The spin-coherence time ($T_2^\star$) measured using the Hanle effect is of order $ns$. The dephasing is attributed to electron spin-precession in local magnetic fields. Dephasing process does not destroy $TMR$, which is strongly asymmetric with bias voltage. The asymmetric TMR is explained by spin relaxation in Al grains and asymmetric electron dwell times. △ Less

Submitted 1 December, 2005; v1 submitted 7 February, 2005; originally announced February 2005.

Comments: 4 pages 4 figures

Journal ref: Phys. Rev. B, 72 (19), 155445, 2005

A planar force-constant model for phonons in wurtzite GaN and AlN: Application to hexagonal GaN/AlN superlattices

Authors: Lingjun Wang, Guanghong Wei, Jian Zi

Abstract: A planar force-constant model is developed for longitudinal phonons of wurtzite GaN and AlN propagating along the [0001] direction. The proposed model is then applied to the study of the phonon modes in hexagonal GaN/AlN superlattices in the longitudinal polarization. The confinement of the superlattice phonon mode is discussed. A planar force-constant model is developed for longitudinal phonons of wurtzite GaN and AlN propagating along the [0001] direction. The proposed model is then applied to the study of the phonon modes in hexagonal GaN/AlN superlattices in the longitudinal polarization. The confinement of the superlattice phonon mode is discussed. △ Less

Submitted 17 December, 1998; originally announced December 1998.

Comments: 10 pages, 4 figures, RevTex