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Possible Topological Superconductivity in a Topological Crystalline Insulator (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te
Authors:
I. Pletikosic,
T. Yilmaz,
B. Sinkovic,
A. P. Weber,
G. D. Gu,
T. Valla
Abstract:
Superconductivity in topological insulators is expected to show very unconventional features such as $p+ip$ order parameter, Majorana fermions etc. However, the intrinsic superconductivity has been observed in a very limited number of materials in which the pairing symmetry is still a matter of debate. Here, we study the topological crystalline insulator (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te, where a…
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Superconductivity in topological insulators is expected to show very unconventional features such as $p+ip$ order parameter, Majorana fermions etc. However, the intrinsic superconductivity has been observed in a very limited number of materials in which the pairing symmetry is still a matter of debate. Here, we study the topological crystalline insulator (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te, where a peculiar insulator to superconductor transition was previously reported near the gap inversion transition, when the system is nearly a 3-dimensional Dirac semimetal. Both the existence of superconductivity near the 3-dimensional Dirac semimetal and the occurrence of insulator to superconductor transition in an isotropic material is highly unusual. We suggest that the observed phenomena are related to an intrinsic instability of a 3-dimensional Dirac semimetal state in (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te and "flattening" of the bulk valence and conduction bands as they acquire a Mexican hat-like dispersion on the inverted side of the phase diagram. This favors the pairing instability if the chemical potential is pinned to these flat regions.
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Submitted 15 November, 2023;
originally announced November 2023.
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Ultraconfined plasmons in atomically thin crystalline silver nanostructures
Authors:
Vahagn Mkhitaryan,
Andrew P. Weber,
Saad Abdullah,
Laura Fernández,
Zakaria M. Abd El-Fattah,
Ignacio Piquero-Zulaica,
Hitesh Agarwal,
Kevin García Díez,
3 Frederik Schiller,
J. Enrique Ortega,
F. Javier García de Abajo
Abstract:
The ability to confine light down to atomic scales is critical for the development of applications in optoelectronics and optical sensing as well as for the exploration of nanoscale quantum phenomena. Plasmons in metallic nanostructures can achieve this type of confinement, although fabrication imperfections down to the subnanometer scale hinder actual developments. Here, we demonstrate narrow pla…
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The ability to confine light down to atomic scales is critical for the development of applications in optoelectronics and optical sensing as well as for the exploration of nanoscale quantum phenomena. Plasmons in metallic nanostructures can achieve this type of confinement, although fabrication imperfections down to the subnanometer scale hinder actual developments. Here, we demonstrate narrow plasmons in atomically thin crystalline silver nanostructures fabricated by prepatterning silicon substrates and epitaxially depositing silver films of just a few atomic layers in thickness. Combined with on-demand lateral sha**, this procedure allows for an unprecedented control over optical field confinement in the near-infrared spectral region. Specifically, we observe fundamental and higher-order plasmons featuring extreme spatial confinement and high-quality factors that reflect the crystallinity of the metal. Our approach holds potential for the design and exploitation of atomic-scale nanoplasmonic devices in optoelectronics, sensing, and quantum-physics applications.
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Submitted 20 March, 2023;
originally announced March 2023.
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A two-dimensional electron gas at the (001) surface of ferromagnetic EuTiO$_{3}$(001)
Authors:
R. Di Capua,
M. Verma,
M. Radovic,
N. C. Plumb,
J. H. Dil,
Z. Ristic,
E. B. Guedes,
G. M. De Luca,
D. Preziosi,
Z. Wang,
A. P. Weber,
R. Pentcheva,
M. Salluzzo
Abstract:
Studies on oxide quasi-two dimensional electron gas (q2DEG) have been a playground for the discovery of novel and sometimes unexpected phenomena, like the reported magnetism at the surface and at the interface between LaAlO$_{3}$ and SrTiO$_{3}$ non-magnetic materials. However, magnetism in this system is weak and there are evidences of a not intrinsic origin. Here, by using in-situ high-resolutio…
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Studies on oxide quasi-two dimensional electron gas (q2DEG) have been a playground for the discovery of novel and sometimes unexpected phenomena, like the reported magnetism at the surface and at the interface between LaAlO$_{3}$ and SrTiO$_{3}$ non-magnetic materials. However, magnetism in this system is weak and there are evidences of a not intrinsic origin. Here, by using in-situ high-resolution angle resolved photoemission we demonstrate that ferromagnetic EuTiO$_{3}$, the magnetic counterpart of SrTiO$_{3}$ in the bulk, hosts a q2DEG at its (001) surface. This is confirmed by density functional theory calculations with Hubbard U terms in the presence of oxygen divacancies in various configurations, all of them leading to a spin-polarized q2DEG related to the ferromagnetic order of Eu-4f magnetic moments. The results suggest EuTiO$_{3}$(001) as a new material platform for oxide q2DEGs, characterized by broken inversion and time reversal symmetries.
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Submitted 22 June, 2021; v1 submitted 11 March, 2020;
originally announced March 2020.
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Observation of a cubic Rashba effect in the surface spin structure of rare-earth ternary materials
Authors:
D. Yu. Usachov,
I. A. Nechaev,
G. Poelchen,
M. Güttler,
E. E. Krasovskii,
S. Schulz,
A. Generalov,
K. Kliemt,
A. Kraiker,
C. Krellner,
K. Kummer,
S. Danzenbächer,
C. Laubschat,
A. P. Weber,
E. V. Chulkov,
A. F. Santander-Syro,
T. Imai,
K. Miyamoto,
T. Okuda,
D. V. Vyalikh
Abstract:
Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile spin-polarized carriers at the surface. Spin-resolved measurements of the photoemission current from the Si-terminated surface of the antiferromagnet TbRh2Si2 and their analysis within an ab initio one-step theory unveil an unusual triple winding…
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Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile spin-polarized carriers at the surface. Spin-resolved measurements of the photoemission current from the Si-terminated surface of the antiferromagnet TbRh2Si2 and their analysis within an ab initio one-step theory unveil an unusual triple winding of the electron spin along the fourfold-symmetric constant energy contours of the surface states. A two-band k.p model is presented that yields the triple winding as a cubic Rashba effect. The curious in-plane spin-momentum locking is remarkably robust and remains intact across a paramagnetic-antiferromagnetic transition in spite of spin-orbit interaction on Rh atoms being considerably weaker than the out-of-plane exchange field due to the Tb 4f moments.
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Submitted 5 February, 2020;
originally announced February 2020.
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Single spin-polarised Fermi surface in SrTiO$_3$ thin films
Authors:
Eduardo B. Guedes,
Stefan Muff,
Mauro Fanciulli,
Andrew P. Weber,
Marco Caputo,
Zhiming Wang,
Nicholas C. Plumb,
Milan Radović,
J. Hugo Dil
Abstract:
The 2D electron gas (2DEG) formed at the surface of SrTiO$_3$(001) has attracted great interest because of its fascinating physical properties and potential as a novel electronic platform, but up to now has eluded a comprehensible way to tune its properties. Using angle-resolved photoemission spectroscopy with and without spin detection we here show that the band filling can be controlled by growi…
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The 2D electron gas (2DEG) formed at the surface of SrTiO$_3$(001) has attracted great interest because of its fascinating physical properties and potential as a novel electronic platform, but up to now has eluded a comprehensible way to tune its properties. Using angle-resolved photoemission spectroscopy with and without spin detection we here show that the band filling can be controlled by growing thin SrTiO$_3$ films on Nb doped SrTiO$_3$(001) substrates. This results in a single spin-polarised 2D Fermi surface, which bears potential as platform for Majorana physics. Based on our results it can furthermore be concluded that the 2DEG does not extend more than 2 unit cells into the film and that its properties depend on the amount of SrO$_x$ at the surface and possibly the dielectric response of the system.
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Submitted 25 May, 2020; v1 submitted 20 August, 2019;
originally announced August 2019.
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Spin-resolved electronic response to the phase transition in MoTe$_2$
Authors:
Andrew P. Weber,
Philipp Rüßmann,
Nan Xu,
Stefan Muff,
Mauro Fanciulli,
Arnaud Magrez,
Philippe Bugnon,
Helmuth Berger,
Nicholas C. Plumb,
Ming Shi,
Stefan Blügel,
Phivos Mavropoulos,
J. Hugo Dil
Abstract:
The semimetal MoTe$_2$ is studied by spin- and angle- resolved photoemission spectroscopy to probe the detailed electronic structure underlying its broad range of response behavior. A novel spin-texture is uncovered in the bulk Fermi surface of the non-centrosymmetric structural phase that is consistent with first-principles calculations. The spin-texture is three-dimensional, both in terms of mom…
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The semimetal MoTe$_2$ is studied by spin- and angle- resolved photoemission spectroscopy to probe the detailed electronic structure underlying its broad range of response behavior. A novel spin-texture is uncovered in the bulk Fermi surface of the non-centrosymmetric structural phase that is consistent with first-principles calculations. The spin-texture is three-dimensional, both in terms of momentum dependence and spin-orientation, and is not completely suppressed above the centrosymmetry-breaking transition temperature. Two types of surface Fermi arc are found to persist well above the transition temperature. The appearance of a large Fermi arc depends strongly on thermal history, and the electron quasiparticle lifetimes are greatly enhanced in the initial cooling. The results indicate that polar instability with strong electron-lattice interactions exists near the surface when the bulk is largely in a centrosymmetric phase.
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Submitted 1 July, 2018;
originally announced July 2018.
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Observation of Wannier-Stark localization at the surface of BaTiO$_3$ films by photoemission
Authors:
Stefan Muff,
Nicolas Pilet,
Mauro Fanciulli,
Andrew P. Weber,
Christian Wessler,
Zoran Ristic,
Zhiming Wang,
Nicholas C. Plumb,
Milan Radovic,
J. Hugo Dil
Abstract:
Observation of Bloch oscillations and Wannier-Stark localization of charge carriers is typically impossible in single-crystals, because an electric field higher than the breakdown voltage is required. In BaTiO$_3$ however, high intrinsic electric fields are present due to its ferroelectric properties. With angle-resolved photoemission we directly probe the Wannier-Stark localized surface states of…
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Observation of Bloch oscillations and Wannier-Stark localization of charge carriers is typically impossible in single-crystals, because an electric field higher than the breakdown voltage is required. In BaTiO$_3$ however, high intrinsic electric fields are present due to its ferroelectric properties. With angle-resolved photoemission we directly probe the Wannier-Stark localized surface states of the BaTiO$_3$ film-vacuum interface and show that this effect extends to thin SrTiO$_3$ overlayers. The electrons are found to be localized along the in-plane polarization direction of the BaTiO$_3$ film.
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Submitted 6 October, 2017;
originally announced October 2017.
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Spin-resolved electronic structure of ferroelectric α-GeTe and multiferroic Ge1-xMnxTe
Authors:
J. Krempasky,
M. Fanciulli,
J. Minár,
W. Khan,
M. Muntwiler,
F. Bertran,
S. Muff,
A. P. Weber,
V. N. Strocov,
V. V. Volobuiev,
G. Springholz,
J. H. Dil
Abstract:
Germanium telluride features special spin-electric effects originating from spin-orbit coupling and symmetry breaking by the ferroelectric lattice polarization, which opens up many prospectives for electrically tunable and switchable spin electronic devices. By Mn do** of the α-GeTe host lattice, the system becomes a multiferroic semiconductor possessing magnetoelectric properties in which the e…
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Germanium telluride features special spin-electric effects originating from spin-orbit coupling and symmetry breaking by the ferroelectric lattice polarization, which opens up many prospectives for electrically tunable and switchable spin electronic devices. By Mn do** of the α-GeTe host lattice, the system becomes a multiferroic semiconductor possessing magnetoelectric properties in which the electric polarization, magnetization and spin texture are coupled to each other. Employing spin- and angle-resolved photoemission spectroscopy in bulk- and surface-sensitive energy ranges and by varying dipole transition matrix elements, we disentangle the bulk, surface and surface-resonance states of the electronic structure and determine the spin textures for selected parameters. From our results, we derive a comprehensive model of the α-GeTe surface electronic structure which fits experimental data and first principle theoretical predictions and we discuss the unconventional evolution of the Rashba-type spin splitting upon manipulation by external B- and E-fields.
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Submitted 14 August, 2017;
originally announced August 2017.
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Operando imaging of all-electric spin texture manipulation in ferroelectric and multiferroic Rashba semiconductors
Authors:
J. Krempaský,
S. Muff,
J. Minár,
N. Pilet,
M. Fanciulli,
A. P. Weber,
V. V. Volobuiev,
M. Gmitra,
C. A. F. Vaz,
V. Scagnoli,
G. Springholz,
J. H. Dil
Abstract:
The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric GeTe and multiferroic Ge1-xMnxTe. We not only demonstrate for the first time electrostatic spin manipulation in Rashba semiconducto…
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The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric GeTe and multiferroic Ge1-xMnxTe. We not only demonstrate for the first time electrostatic spin manipulation in Rashba semiconductors due to ferroelectric polarization reversal, but are also able to follow the switching pathway in detail, and show a gain of the Rashba-splitting strength under external fields. In multiferroic Ge1-xMnxTe operando SARPES reveals switching of the perpendicular spin component due to electric field induced magnetization reversal. This provides firm evidence of effective multiferroic coupling which opens up magnetoelectric functionality with a multitude of spin-switching paths in which the magnetic and electric order parameters are coupled through ferroelastic relaxation paths. This work thus provides a new type of magnetoelectric switching entangled with Rashba-Zeeman splitting in a multiferroic system.
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Submitted 26 July, 2017;
originally announced July 2017.
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Universal response of the type-II Weyl semimetals phase diagram
Authors:
P. Rüßmann,
A. P. Weber,
F. Glott,
N. Xu,
M. Fanciulli,
S. Muff,
A. Magrez,
P. Bugnon,
H. Berger,
M. Bode,
J. H. Dil,
S. Blügel,
P. Mavropoulos,
P. Sessi
Abstract:
The discovery of Weyl semimetals represents a significant advance in topological band theory. They paradigmatically enlarged the classification of topological materials to gapless systems while simultaneously providing experimental evidence for the long-sought Weyl fermions. Beyond fundamental relevance, their high mobility, strong magnetoresistance, and the possible existence of even more exotic…
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The discovery of Weyl semimetals represents a significant advance in topological band theory. They paradigmatically enlarged the classification of topological materials to gapless systems while simultaneously providing experimental evidence for the long-sought Weyl fermions. Beyond fundamental relevance, their high mobility, strong magnetoresistance, and the possible existence of even more exotic effects, such as the chiral anomaly, make Weyl semimetals a promising platform to develop radically new technology. Fully exploiting their potential requires going beyond the mere identification of materials and calls for a detailed characterization of their functional response, which is severely complicated by the coexistence of surface- and bulk-derived topologically protected quasiparticles, i.e., Fermi arcs and Weyl points, respectively. Here, we focus on the type-II Weyl semimetal class where we find a stoichiometry-dependent phase transition from a trivial to a non-trivial regime. By exploring the two extreme cases of the phase diagram, we demonstrate the existence of a universal response of both surface and bulk states to perturbations. We show that quasi-particle interference patterns originate from scattering events among surface arcs. Analysis reveals that topologically non-trivial contributions are strongly suppressed by spin texture. We also show that scattering at localized impurities generate defect-induced quasiparticles sitting close to the Weyl point energy. These give rise to strong peaks in the local density of states, which lift the Weyl node significantly altering the pristine low-energy Weyl spectrum. Visualizing the microscopic response to scattering has important consequences for understanding the unusual transport properties of this class of materials. Overall, our observations provide a unifying picture of the Weyl phase diagram.
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Submitted 1 June, 2017;
originally announced June 2017.
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Observation of a two-dimensional electron gas at CaTiO$_3$ film surfaces
Authors:
Stefan Muff,
Mauro Fanciulli,
Andrew P. Weber,
Nicolas Pilet,
Zoran Ristic,
Zhiming Wang,
Nicholas C. Plumb,
Milan Radovic,
J. Hugo Dil
Abstract:
The two-dimensional electron gas at the surface of titanates gathered attention due to its potential to replace conventional silicon based semiconductors in the future. In this study, we investigated films of the parent perovskite CaTiO$_3$, grown by pulsed laser deposition, by means of angular-resolved photoelectron spectroscopy. The films show a c(4x2) surface reconstruction after the growth tha…
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The two-dimensional electron gas at the surface of titanates gathered attention due to its potential to replace conventional silicon based semiconductors in the future. In this study, we investigated films of the parent perovskite CaTiO$_3$, grown by pulsed laser deposition, by means of angular-resolved photoelectron spectroscopy. The films show a c(4x2) surface reconstruction after the growth that is reduced to a p(2x2) reconstruction under UV-light. At the CaTiO$_3$ film surface, a two-dimensional electron gas (2DEG) is found with an occupied band width of 400 meV. With our findings CaTiO$_3$ is added to the group of oxides with a 2DEG at their surface. Our study widens the phase space to investigate strontium and barium doped CaTiO$_3$ and the interplay of ferroelectric properties with the 2DEG at oxide surfaces. This could open up new paths to tailor two-dimensional transport properties of these systems towards possible applications.
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Submitted 26 May, 2017;
originally announced May 2017.
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Discovery of Weyl semimetal state violating Lorentz invariance in MoTe2
Authors:
N. Xu,
Z. J. Wang,
A. P. Weber,
A. Magrez,
P. Bugnon,
H. Berger,
C. E. Matt,
J. Z. Ma,
B. B. Fu,
B. Q. Lv,
N. C. Plumb,
M. Radovic,
E. Pomjakushina,
K. Conder,
T. Qian,
J. H. Dil,
J. Mesot,
H. Ding,
M. Shi
Abstract:
A new type of Weyl semimetal state, in which the energy values of Weyl nodes are not the local extrema, has been theoretically proposed recently, namely type II Weyl semimetal. Distinguished from type I semimetal (e.g. TaAs), the Fermi surfaces in a type II Weyl semimetal consist of a pair of electron and hole pockets touching at the Weyl node. In addition, Weyl fermions in type II Weyl semimetals…
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A new type of Weyl semimetal state, in which the energy values of Weyl nodes are not the local extrema, has been theoretically proposed recently, namely type II Weyl semimetal. Distinguished from type I semimetal (e.g. TaAs), the Fermi surfaces in a type II Weyl semimetal consist of a pair of electron and hole pockets touching at the Weyl node. In addition, Weyl fermions in type II Weyl semimetals violate Lorentz invariance. Due to these qualitative differences distinct spectroscopy and magnetotransport properties are expected in type II Weyl semimetals. Here, we present the direct observation of the Fermi arc states in MoTe2 by using angle resolved photoemission spectroscopy. Two arc states are identified for each pair of Weyl nodes whoes surface projections of them possess single topological charge, which is a unique property for type II Weyl semimetals. The experimentally determined Fermi arcs are consistent with our first principle calculations. Our results unambiguously establish that MoTe2 is a type II Weyl semimetal, which serves as a great test bed to investigate the phenomena of new type of Weyl fermions with Lorentz invariance violated.
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Submitted 7 April, 2016;
originally announced April 2016.
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Gapped Surface States in a Strong-Topological-Semimetal
Authors:
A. P. Weber,
Q. D. Gibson,
Huiwen Ji,
A. N. Caruso,
A. V. Fedorov,
R. J. Cava,
T. Valla
Abstract:
A three-dimensional strong-topological-insulator or -semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be mistaken when surface state degeneracies occur away from time-reversal-invariant momenta. The mirror-invariance of the system then becomes essential in protecting the existence of a surface Fermi sur…
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A three-dimensional strong-topological-insulator or -semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be mistaken when surface state degeneracies occur away from time-reversal-invariant momenta. The mirror-invariance of the system then becomes essential in protecting the existence of a surface Fermi surface. Here we show that such a case exists in the strong-topological-semimetal Bi$_4$Se$_3$. Angle-resolved photoemission spectroscopy and \textit{ab initio} calculations reveal partial gap** of surface bands on the Bi$_2$Se$_3$-termination of Bi$_4$Se$_3$(111), where an 85 meV gap along $\barΓ\bar{K}$ closes to zero toward the mirror-invariant $\barΓ\bar{M}$ azimuth. The gap opening is attributed to an interband spin-orbit interaction that mixes states of opposite spin-helicity.
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Submitted 23 June, 2015;
originally announced June 2015.
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Absence of a Proximity Effect in a Topological Insulator on a Cuprate Superconductor: Bi2Se3/Bi2Sr2CaCu2O8
Authors:
T. Yilmaz,
I. Pletikosic,
A. P. Weber,
J. T. Sadowski,
G. D. Gu,
A. N. Caruso,
B. Sinkovic,
T. Valla
Abstract:
Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors put the hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attra…
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Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors put the hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attractive alternative to considerably relax these constraints, but it is not clear whether the proximity effect would be effective in heterostructures involving cuprates and topological insulators. Here, we present angle-resolved photoemission studies of thin Bi2Se3 films grown in-situ on optimally doped Bi2Sr2CaCu2O8 substrates that show the absence of proximity-induced gaps on the surfaces of Bi2Se3 films as thin as a 1.5 quintuple layer. These results suggest that the superconducting proximity effect between a cuprate superconductor and a topological insulator is strongly suppressed, likely due to a very short coherence length along the c-axis, incompatible crystal and pairing symmetries at the interface, small size of the topological surface state Fermi surface and adverse effects of a strong spin-orbit coupling in the topological material.
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Submitted 17 March, 2014;
originally announced March 2014.
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Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se
Authors:
S. K. Kushwaha,
Q. D. Gibson,
J. Xiong,
I. Pletikosic,
A. P. Weber,
A. V. Fedorov,
N. P. Ong,
T. Valla,
R. J. Cava
Abstract:
A comparative study of the properties of topological insulator Bi2Te2Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn do**. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but…
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A comparative study of the properties of topological insulator Bi2Te2Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn do**. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 x 1014 cm-3. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (EF) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, that the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near EF. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.
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Submitted 15 March, 2014;
originally announced March 2014.
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Termination dependent topological surface states of the natural superlattice phase Bi$_4$Se$_3$
Authors:
Q. D. Gibson,
L. M. Schoop,
A. P. Weber,
Huiwen Ji,
S. Nadj-Perge,
I. K. Drozdov,
H. Beidenkopf,
J. T. Sadowski,
A. Fedorov,
A. Yazdani,
T. Valla,
R. J. Cava
Abstract:
We describe the topological surface states of Bi$_4$Se$_3$, a compound in the infinitely adaptive Bi$_2$-Bi$_2$Se$_3$ natural superlattice phase series, determined by a combination of experimental and theoretical methods. Two observable cleavage surfaces, terminating at Bi or Se, are characterized by angle resolved photoelectron spectroscopy and scanning tunneling microscopy, and modeled by ab-ini…
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We describe the topological surface states of Bi$_4$Se$_3$, a compound in the infinitely adaptive Bi$_2$-Bi$_2$Se$_3$ natural superlattice phase series, determined by a combination of experimental and theoretical methods. Two observable cleavage surfaces, terminating at Bi or Se, are characterized by angle resolved photoelectron spectroscopy and scanning tunneling microscopy, and modeled by ab-initio density functional theory calculations. Topological surface states are observed on both surfaces, but with markedly different dispersions and Kramers point energies. Bi$_4$Se$_3$ therefore represents the only known compound with different topological states on differently terminated surfaces.
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Submitted 8 November, 2013; v1 submitted 15 May, 2013;
originally announced May 2013.
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Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase
Authors:
T. Valla,
Huiwen Ji,
L. M. Schoop,
A. P. Weber,
Z. -H. Pan,
J. T. Sadowski,
E. Vescovo,
A. V. Fedorov,
A. N. Caruso,
Q. D. Gibson,
L. Muchler,
C. Felser,
R. J. Cava
Abstract:
We report spin- and angle-resolved photoemission studies of a topological insulator from the infinitely adaptive series between elemental Bi and Bi$_2$Se$_3$. The compound, based on Bi$_4$Se$_3$, is a 1:1 natural superlattice of alternating Bi$_2$ layers and Bi$_2$Se$_3$ layers; the inclusion of S allows the growth of large crystals, with the formula Bi$_4$Se$_{2.6}$S$_{0.4}$. The crystals cleave…
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We report spin- and angle-resolved photoemission studies of a topological insulator from the infinitely adaptive series between elemental Bi and Bi$_2$Se$_3$. The compound, based on Bi$_4$Se$_3$, is a 1:1 natural superlattice of alternating Bi$_2$ layers and Bi$_2$Se$_3$ layers; the inclusion of S allows the growth of large crystals, with the formula Bi$_4$Se$_{2.6}$S$_{0.4}$. The crystals cleave along the interfaces between the Bi$_2$ and Bi$_2$Se$_3$ layers, with the surfaces obtained having alternating Bi or Se termination. The resulting terraces, observed by photoemission electron microscopy, create avenues suitable for the study of one-dimensional topological physics. The electronic structure, determined by spin- and angle- resolved photoemission spectroscopy, shows the existence of a surface state that forms a large, hexagonally shaped Fermi surface around the $Γ$ point of the surface Brillouin zone, with the spin structure indicating that this material is a topological insulator.
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Submitted 8 January, 2013; v1 submitted 13 August, 2012;
originally announced August 2012.
