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Spinons in a new Shastry-Sutherland lattice magnet Pr$_2$Ga$_2$BeO$_7$
Authors:
N. Li,
A. Brassington,
M. F. Shu,
Y. Y. Wang,
H. Liang,
Q. J. Li,
X. Zhao,
P. J. Baker,
H. Kikuchi,
T. Masuda,
G. Duan,
C. Liu,
H. Wang,
W. Xie,
R. Zhong,
J. Ma,
R. Yu,
H. D. Zhou,
X. F. Sun
Abstract:
Identifying the elusive spinon excitations in quantum spin liquid (QSL) materials is what scientists have long sought for. Recently, thermal conductivity ($κ$) has emerged to be a decisive probe because the fermionic nature of spinons leads to a characteristic nonzero linear $κ_0/T$ term while approaching zero Kelvin. So far, only a few systems have been reported to exhibit such term. Here, we rep…
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Identifying the elusive spinon excitations in quantum spin liquid (QSL) materials is what scientists have long sought for. Recently, thermal conductivity ($κ$) has emerged to be a decisive probe because the fermionic nature of spinons leads to a characteristic nonzero linear $κ_0/T$ term while approaching zero Kelvin. So far, only a few systems have been reported to exhibit such term. Here, we report a $κ_0/T \approx$ 0.01 WK$^{-2}$m$^{-1}$, the largest $κ_0/T$ value ever observed in magnetic oxide QSL candidates, in a new quantum magnet Pr$_2$Ga$_2$BeO$_7$ with a Shastry-Sutherland lattice (SSL). Its QSL nature is further supported by the power-law temperature dependence of the specific heat, a plateau of muon spin relaxation rate, and gapless inelastic neutron spectra. Our theoretical analysis reveals that the introduction of XY spin anisotropy is the key for Pr$_2$Ga$_2$BeO$_7$ to be the first QSL realized on the SSL, after more than four decades of extensive studies on this celebrated magnetically frustrated lattice.
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Submitted 22 May, 2024;
originally announced May 2024.
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Low-temperature specific heat and heat transport of Tb$_2$Ti$_{2-x}$Zr$_x$O$_7$ single crystals
Authors:
H. L. Che,
S. J. Li,
J. C. Wu,
N. Li,
S. K. Guang,
K. Xia,
X. Y. Yue,
Y. Y. Wang,
X. Zhao,
Q. J. Li,
X. F. Sun
Abstract:
We report a study on the specific heat and heat transport of Tb$_2$Ti$_{2-x}$Zr$_x$O$_7$ ($x =$ 0, 0.02, 0.1, 0.2, and 0.4) single crystals at low temperatures and in high magnetic fields. The magnetic specific heat can be described by the Schottky contribution from the crystal-electric-field (CEF) levels of Tb$^{3+}$, with introducing Gaussian distributions of the energy split of the ground-state…
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We report a study on the specific heat and heat transport of Tb$_2$Ti$_{2-x}$Zr$_x$O$_7$ ($x =$ 0, 0.02, 0.1, 0.2, and 0.4) single crystals at low temperatures and in high magnetic fields. The magnetic specific heat can be described by the Schottky contribution from the crystal-electric-field (CEF) levels of Tb$^{3+}$, with introducing Gaussian distributions of the energy split of the ground-state doublet and the gap between the ground state and first excited level. These crystals has an extremely low phonon thermal conductivity in a broad temperature range that can be attributed to the scattering by the magnetic excitations, which are mainly associated with the CEF levels. There is strong magnetic field dependence of thermal conductivity, which is more likely related to the field-induced changes of phonon scattering by the CEF levels than magnetic transitions or spin excitations. For magnetic field along the [111] direction, there is large thermal Hall conductivity at low temperatures which displays a broad peak around 8 T. At high fields up to 14 T, the thermal Hall conductivity decreases to zero, which supports its origin from either the spinon transport or the phonon skew scattering by CEF levels. The thermal Hall effect is rather robust with Zr do** up to 0.2 but is strongly weakened in higher Zr-doped sample.
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Submitted 21 February, 2023;
originally announced February 2023.
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Thermal Transport of Fractionalized Antiferromagnetic and Field Induced States in the Kitaev Material Na$_2$Co$_2$TeO$_6$
Authors:
S. K. Guang,
N. Li,
R. L. Luo,
Q. Huang,
Y. Y. Wang,
X. Y. Yue,
K. Xia,
Q. J. Li,
X. Zhao,
G. Chen,
H. D. Zhou,
X. F. Sun
Abstract:
We report an in-plane thermal transport study of the honeycomb Kitaev material Na$_2$Co$_2$TeO$_6$ at subKelvin temperatures. In zero field, the $κ(T)$ displays a rather weak $T$-dependence but has a non-zero residual term $κ_0/T$, indicating strong phonon scattering by magnetic excitation and the possibility of itinerant spinon-like excitations coexisting with an antiferromagnetic order below 27…
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We report an in-plane thermal transport study of the honeycomb Kitaev material Na$_2$Co$_2$TeO$_6$ at subKelvin temperatures. In zero field, the $κ(T)$ displays a rather weak $T$-dependence but has a non-zero residual term $κ_0/T$, indicating strong phonon scattering by magnetic excitation and the possibility of itinerant spinon-like excitations coexisting with an antiferromagnetic order below 27 K. We propose the zero-field ground state is a novel fractionalized antiferromagnetic (AF*) state with both magnetic order and fractionalized excitations. With both the heat current and external field along the $a*$ (Co-Co bond) direction, the $κ_{a*}$ exhibits two sharp minima at 7.5 T and 10 T, and its value at 8.5 T is almost the same as the pure phononic transport for the high-field polarized state. This confirms the phase boundaries of the reported field-induced intermediate state and suggest its gapless continuum excitations possibly transport heat. No such intermediate phase was found in the $κ_a$ for the current and field along the $a$ (zigzag chain) direction. Finally, Na$_2$Co$_2$TeO$_6$ displays a strongly anisotropic magneto-thermal conductivity since the in-plane (out-of-plane) field strongly enhances (suppresses) the $κ_{a*}$ and $κ_a$.
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Submitted 15 November, 2022;
originally announced November 2022.
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Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state
Authors:
N. Li,
Q. Huang,
X. Y. Yue,
S. K. Guang,
K. Xia,
Y. Y. Wang,
Q. J. Li,
X. Zhao,
H. D. Zhou,
X. F. Sun
Abstract:
We study the magnetic susceptibility, magnetization, resistivity and thermal conductivity of intermetallic HoAgGe single crystals at low temperatures and in magnetic fields along the $a$ and $c$ axis, while the electric and heat currents are along the $c$ axis. The magnetization curves show a series of metamagnetic transitions and small hysteresis at low field for $B \parallel a$, and a weak metam…
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We study the magnetic susceptibility, magnetization, resistivity and thermal conductivity of intermetallic HoAgGe single crystals at low temperatures and in magnetic fields along the $a$ and $c$ axis, while the electric and heat currents are along the $c$ axis. The magnetization curves show a series of metamagnetic transitions and small hysteresis at low field for $B \parallel a$, and a weak metamagnetic transition for $B \parallel c$, respectively. Both the magnetic susceptibility and $ρ(T)$ curve show anomalies at the antiferromagnetic transition ($T\rm_N \sim$ 11.3 K) and spin reorientation transition ($\sim$ 7 K). In zero field and at very low temperatures, the electrons are found to be the main heat carriers. For $B \parallel a$, the $ρ(B)$ curves display large and positive transverse magnetoresistance (MR) with extraordinary field dependence between $B^2$ and $B$-linear, accompanied with anomalies at the metamagnetic transitions and low-field hysteresis; meanwhile, the $κ(B)$ mainly decrease with increasing field and display some anomalies at the metamagnetic transitions. For $B \parallel c$, there is weak and negative longitudinal MR while the $κ(B)$ show rather strong field dependence, indicating the role of phonon heat transport.
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Submitted 25 July, 2022;
originally announced July 2022.
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Magnon-Polaron Driven Thermal Hall Effect in a Heisenberg-Kitaev Antiferromagnet
Authors:
N. Li,
R. R. Neumann,
S. K. Guang,
Q. Huang,
J. Liu,
K. Xia,
X. Y. Yue,
Y. Sun,
Y. Y. Wang,
Q. J. Li,
Y. Jiang,
J. Fang,
Z. Jiang,
X. Zhao,
A. Mook,
J. Henk,
I. Mertig,
H. D. Zhou,
X. F. Sun
Abstract:
The thermal Hall effect, defined as a heat current response transversal to an applied temperature gradient, is a central experimental probe of exotic electrically insulating phases of matter. A key question is how the interplay between magnetic and structural degrees of freedom gives rise to a nonzero thermal Hall conductivity (THC). Here, we present evidence for an intrinsic thermal Hall effect i…
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The thermal Hall effect, defined as a heat current response transversal to an applied temperature gradient, is a central experimental probe of exotic electrically insulating phases of matter. A key question is how the interplay between magnetic and structural degrees of freedom gives rise to a nonzero thermal Hall conductivity (THC). Here, we present evidence for an intrinsic thermal Hall effect in the Heisenberg-Kitaev antiferromagnet and spin-liquid candidate Na$_2$Co$_2$TeO$_6$ brought about by the quantum-geometric Berry curvature of so-called magnon polarons, resulting from magnon-phonon hybridization. At low temperatures, our field- and temperature-dependent measurements show a negative THC for magnetic fields below 10 T and a sign change to positive THC above. Theoretically, the sign and the order of magnitude of the THC cannot be solely explained with magnetic excitations. We demonstrate that, by incorporating spin-lattice coupling into our theoretical calculations, the Berry curvature of magnon polarons counteracts the purely magnonic contribution, reverses the overall sign of the THC, and increases its magnitude, which significantly improves agreement with experimental data. Our work highlights the crucial role of spin-lattice coupling in the thermal Hall effect.
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Submitted 27 February, 2023; v1 submitted 27 January, 2022;
originally announced January 2022.
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Spin-orbit torque in completely compensated synthetic antiferromagnet
Authors:
P. X. Zhang,
L. Y. Liao,
G. Y. Shi,
R. Q. Zhang,
H. Q. Wu,
Y. Y. Wang,
F. Pan,
C. Song
Abstract:
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a perpendicularly magnetized Pt/[Co/Pd]/Ru/[Co/Pd] SAF structure, which exhibits completely compensated magnetization and an exchange coupling field up to 2100 O…
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Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a perpendicularly magnetized Pt/[Co/Pd]/Ru/[Co/Pd] SAF structure, which exhibits completely compensated magnetization and an exchange coupling field up to 2100 Oe. The magnetizations of two Co/Pd layers can be switched between two antiparallel states simultaneously by spin-orbit torque. The magnetization switching can be read out due to much stronger spin-orbit coupling at bottom Pt/[Co/Pd] interface compared to its upper counterpart without Pt. Both experimental and theoretical analyses unravel that the torque efficiency of antiferromagnetic coupled stacks is significantly higher than the ferromagnetic counterpart, making the critical switching current of SAF comparable to the conventional single ferromagnet. Besides adding an important dimension to spin-orbit torque, the efficient switching of completely compensated SAF might advance magnetic memory devices with high density, high speed and low power consumption.
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Submitted 28 May, 2018; v1 submitted 22 May, 2018;
originally announced May 2018.
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Energy deposition by heavy ions: Additivity of kinetic and potential energy contributions in hillock formation on CaF2
Authors:
Y. Y. Wang,
C. Grygiel,
C. Dufour,
J. R. Sun,
Z. G. Wang,
Y. T. Zhao,
G. Q. Xiao,
R. Cheng,
X. M. Zhou,
J. R. Ren,
S. D. Liu,
Y. Lei,
Y. B. Sun,
R. Ritter,
E. Gruber,
A. Cassimi,
I. Monnet,
S. Bouffard,
F. Aumayr,
M. Toulemonde
Abstract:
The formation of nano-hillocks on CaF2 crystal surfaces by individual ion impact has been studied using medium energy (3 and 5 MeV) highly charged ions (Xe19+ to Xe30+) as well as swift (kinetic energies between 12 and 58 MeV) heavy ions. For very slow highly charged ions the appearance of hillocks is known to be linked to a threshold in potential energy while for swift heavy ions a minimum electr…
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The formation of nano-hillocks on CaF2 crystal surfaces by individual ion impact has been studied using medium energy (3 and 5 MeV) highly charged ions (Xe19+ to Xe30+) as well as swift (kinetic energies between 12 and 58 MeV) heavy ions. For very slow highly charged ions the appearance of hillocks is known to be linked to a threshold in potential energy while for swift heavy ions a minimum electronic energy loss is necessary. With our results we bridge the gap between these two extreme cases and demonstrate, that with increasing energy deposition via electronic energy loss the potential energy threshold for hillock production can be substantially lowered. Surprisingly, both mechanisms of energy deposition in the target surface seem to contribute in an additive way, as demonstrated when plotting the results in a phase diagram. We show that the inelastic thermal spike model, originally developed to describe such material modifications for swift heavy ions, can be extended to case where kinetic and potential energies are deposited into the surface.
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Submitted 17 February, 2014;
originally announced February 2014.
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Quantum oscillations in Kondo Insulator SmB$_6$
Authors:
G. Li,
Z. Xiang,
F. Yu,
T. Asaba,
B. Lawson,
P. Cai,
C. Tinsman,
A. Berkley,
S. Wolgast,
Y. S. Eo,
Dae-Jeong Kim,
C. Kurdak,
J. W. Allen,
K. Sun,
X. H. Chen,
Y. Y. Wang,
Z. Fisk,
Lu Li
Abstract:
In Kondo insulator samarium hexaboride SmB$_6$, strong correlation and band hybridization lead to an insulating gap and a diverging resistance at low temperature. The resistance divergence ends at about 5 Kelvin, a behavior recently demonstrated to arise from the surface conductance. However, questions remain whether and where a topological surface state exists. Quantum oscillations have not been…
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In Kondo insulator samarium hexaboride SmB$_6$, strong correlation and band hybridization lead to an insulating gap and a diverging resistance at low temperature. The resistance divergence ends at about 5 Kelvin, a behavior recently demonstrated to arise from the surface conductance. However, questions remain whether and where a topological surface state exists. Quantum oscillations have not been observed to map the Fermi surface. We solve the problem by resolving the Landau Level quantization and Fermi surface topology using torque magnetometry. The observed Fermi surface suggests a two dimensional surface state on the (101) plane. Furthermore, the tracking of the Landau Levels in the infinite magnetic field limit points to -1/2, which indicates a 2D Dirac electronic state.
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Submitted 21 June, 2013;
originally announced June 2013.
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Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties
Authors:
H. M. Wang,
Z. Zheng,
Y. Y. Wang,
J. J. Qiu,
Z. B. Guo,
Z. X. Shen,
T. Yu
Abstract:
We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few hundred nanometers separation. The parallel edges help to build uniform electrical field and allow us to perform electron emission study on individual graphene. It…
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We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few hundred nanometers separation. The parallel edges help to build uniform electrical field and allow us to perform electron emission study on individual graphene. It was found that current-voltage characteristics are governed by the space-charge-limited flow of current at low biases while the FN model fits the I-V curves in high voltage regime. We also examined electrostatic gating effect of the vacuum electronic device. Graphene nanogap with atomically parallel edges may open up opportunities for both fundamental and applied research of vacuum nanoelectronics.
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Submitted 27 December, 2009;
originally announced December 2009.
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Probing charged impurities in suspended graphene using Raman spectroscopy
Authors:
Zhen Hua Ni,
Ting Yu,
Zhi Qiang Luo,
Ying Ying Wang,
Lei Liu,
Choun Pei Wong,
Jian Min Miao,
Wei Huang,
Ze Xiang Shen
Abstract:
Charged impurity (CI) scattering is one of the dominant factors that affect the carrier mobility in graphene. In this paper, we use Raman spectroscopy to probe the charged impurities in suspended graphene. We find that the 2D band intensity is very sensitive to the CI concentration in graphene, while the G band intensity is not affected. The intensity ratio between the 2D and G bands, I2D/IG, of…
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Charged impurity (CI) scattering is one of the dominant factors that affect the carrier mobility in graphene. In this paper, we use Raman spectroscopy to probe the charged impurities in suspended graphene. We find that the 2D band intensity is very sensitive to the CI concentration in graphene, while the G band intensity is not affected. The intensity ratio between the 2D and G bands, I2D/IG, of suspended graphene is much stronger compared to that of non-suspended graphene, due to the extremely weak CI scattering in the former. This finding is consistent with the ultra-high carrier mobility in suspended graphene observed in recent transport measurements. Our results also suggest that at low CI concentrations that are critical for device applications, the I2D/IG ratio is a better criterion in selecting high quality single layer graphene samples than is the G band blue shift.
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Submitted 18 February, 2009; v1 submitted 22 December, 2008;
originally announced December 2008.
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Uniaxial strain on graphene: Raman spectroscopy study and bandgap opening
Authors:
Zhen Hua Ni,
Ting Yu,
Yun Hao Lu,
Ying Ying Wang,
Yuan ** Feng,
Ze Xiang Shen
Abstract:
Graphene was deposited on a transparent and flexible substrate and tensile strain up to ~0.8% was loaded by stretching the substrate in one direction. Raman spectra of strained graphene show significant redshifts of 2D and G band (-27.8 cm^-1 and -14.2 cm^-1per 1% strain, respectively), because of the elongation of the carbon-carbon bonds. This indicates that uniaxial strain has been successfull…
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Graphene was deposited on a transparent and flexible substrate and tensile strain up to ~0.8% was loaded by stretching the substrate in one direction. Raman spectra of strained graphene show significant redshifts of 2D and G band (-27.8 cm^-1 and -14.2 cm^-1per 1% strain, respectively), because of the elongation of the carbon-carbon bonds. This indicates that uniaxial strain has been successfully applied on graphene. We also proposed that by applying uniaxial strain on graphene, tunable bandgap at K point can be realized. First principle calculations predicted a bandgap opening of ~300 meV for graphene under 1% uniaxial tensile strain. The strained graphene provides an alternative way to experimentally tune the bandgap of graphene, which would be more efficient and more controllable than other methods that are used to open bandgap in graphene. Moreover, our results suggest that the flexible substrate is ready for such strain process and Raman spectroscopy can be used as an ultra-sensitive method to determine the strain.
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Submitted 20 October, 2008;
originally announced October 2008.
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Raman spectroscopy and imaging of graphene
Authors:
Zhen hua Ni,
Ying ying Wang,
Ting Yu,
Ze xiang Shen
Abstract:
Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review the recent results on the Raman spectroscopy and imaging of graphene. Raman spectroscopy and imaging can be used as a quick and unambiguous method to determine the number of graphene layers. Following, the strong Raman signal of single layer graphene co…
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Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review the recent results on the Raman spectroscopy and imaging of graphene. Raman spectroscopy and imaging can be used as a quick and unambiguous method to determine the number of graphene layers. Following, the strong Raman signal of single layer graphene compared to graphite is explained by an interference enhancement model. We have also studied the effect of substrates, the top layer deposition, the annealing process, as well as folding (stacking order) on the physical and electronic properties of graphene. Finally, Raman spectroscopy of epitaxial graphene grown on SiC substrate is presented and strong compressive strain on epitaxial graphene is observed. The results presented here are closely related to the application of graphene on nano-electronic device and help on the better understanding of physical and electronic properties of graphene.
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Submitted 15 October, 2008;
originally announced October 2008.
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Electron spin relaxation in cubic GaN quantum dots
Authors:
M. Q. Weng,
Y. Y. Wang,
M. W. Wu
Abstract:
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc blende semiconductor quantum dots, {i.e.} the electron-phonon scattering in conjunction with the Dresselhaus spin-orbit coupling and the second-order process of th…
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The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc blende semiconductor quantum dots, {i.e.} the electron-phonon scattering in conjunction with the Dresselhaus spin-orbit coupling and the second-order process of the hyperfine interaction combined with the electron-phonon scattering, are systematically studied. The relative importance of the two mechanisms are compared in detail under different conditions. It is found that due to the small spin orbit coupling in GaN, the spin relaxation caused by the second-order process of the hyperfine interaction combined with the electron-phonon scattering plays much more important role than it does in the quantum dot with narrower band gap and larger spin-orbit coupling, such as GaAs and InAs.
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Submitted 23 March, 2009; v1 submitted 24 September, 2008;
originally announced September 2008.
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Control of spin coherence in semiconductor double quantum dots
Authors:
Y. Y. Wang,
M. W. Wu
Abstract:
We propose a scheme to manipulate the spin coherence in vertically coupled GaAs double quantum dots. Up to {\em ten} orders of magnitude variation of the spin relaxation and {\em two} orders of magnitude variation of the spin dephasing can be achieved by a small gate voltage applied vertically on the double dot. Specially, large variation of spin relaxation still exists at 0 K. In the calculatio…
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We propose a scheme to manipulate the spin coherence in vertically coupled GaAs double quantum dots. Up to {\em ten} orders of magnitude variation of the spin relaxation and {\em two} orders of magnitude variation of the spin dephasing can be achieved by a small gate voltage applied vertically on the double dot. Specially, large variation of spin relaxation still exists at 0 K. In the calculation, the equation-of-motion approach is applied to obtain the electron decoherence time and all the relevant spin decoherence mechanisms, such as the spin-orbit coupling together with the electron--bulk-phonon scattering, the direct spin-phonon coupling due to the phonon-induced strain, the hyperfine interaction and the second-order process of electron-phonon scattering combined with the hyperfine interaction, are included. The condition to obtain the large variations of spin coherence is also addressed.
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Submitted 18 February, 2008; v1 submitted 23 August, 2007;
originally announced August 2007.
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Reexamination of spin decoherence in semiconductor quantum dots from equation-of-motion approach
Authors:
J. H. Jiang,
Y. Y. Wang,
M. W. Wu
Abstract:
The longitudinal and transversal spin decoherence times, $T_1$ and $T_2$, in semiconductor quantum dots are investigated from equation-of-motion approach for different magnetic fields, quantum dot sizes, and temperatures. Various mechanisms, such as the hyperfine interaction with the surrounding nuclei, the Dresselhaus spin-orbit coupling together with the electron--bulk-phonon interaction, the…
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The longitudinal and transversal spin decoherence times, $T_1$ and $T_2$, in semiconductor quantum dots are investigated from equation-of-motion approach for different magnetic fields, quantum dot sizes, and temperatures. Various mechanisms, such as the hyperfine interaction with the surrounding nuclei, the Dresselhaus spin-orbit coupling together with the electron--bulk-phonon interaction, the $g$-factor fluctuations, the direct spin-phonon coupling due to the phonon-induced strain, and the coaction of the electron--bulk/surface-phonon interaction together with the hyperfine interaction are included. The relative contributions from these spin decoherence mechanisms are compared in detail. In our calculation, the spin-orbit coupling is included in each mechanism and is shown to have marked effect in most cases. The equation-of-motion approach is applied in studying both the spin relaxation time $T_1$ and the spin dephasing time $T_2$, either in Markovian or in non-Markovian limit. When many levels are involved at finite temperature, we demonstrate how to obtain the spin relaxation time from the Fermi Golden rule in the limit of weak spin-orbit coupling. However, at high temperature and/or for large spin-orbit coupling, one has to use the equation-of-motion approach when many levels are involved. Moreover, spin dephasing can be much more efficient than spin relaxation at high temperature, though the two only differs by a factor of two at low temperature.
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Submitted 17 December, 2007; v1 submitted 2 April, 2007;
originally announced April 2007.
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Control of spin relaxation in semiconductor double quantum dots
Authors:
Y. Y. Wang,
M. W. Wu
Abstract:
We propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to {\em twelve} orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied vertically on the double dot. Different effects such as the dot size, barrier height, inter-dot distance, and magnetic field on the spin relaxation are investigat…
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We propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to {\em twelve} orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied vertically on the double dot. Different effects such as the dot size, barrier height, inter-dot distance, and magnetic field on the spin relaxation are investigated in detail. The condition to achieve a large variation is discussed.
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Submitted 13 July, 2006; v1 submitted 2 January, 2006;
originally announced January 2006.
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Schottky-barrier induced spin dephasing in spin injection
Authors:
Y. Y. Wang,
M. W. Wu
Abstract:
An ensemble Monte Carlo method is used to study the spin injection through a ferromagnet-semiconductor junction where a Schottky barrier is formed. It is shown that the Schottky-barrier-induced electric field which is confined in the depletion region and parallel to the injection direction, is very large. This electric field can induce an effective magnetic field due to the Rashba effect and cau…
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An ensemble Monte Carlo method is used to study the spin injection through a ferromagnet-semiconductor junction where a Schottky barrier is formed. It is shown that the Schottky-barrier-induced electric field which is confined in the depletion region and parallel to the injection direction, is very large. This electric field can induce an effective magnetic field due to the Rashba effect and cause strong spin dephasing.
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Submitted 24 August, 2005; v1 submitted 10 June, 2005;
originally announced June 2005.
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Momentum-Dependent Charge Transfer Excitations in Sr2CuO2Cl2 - Angle Resolved Electron Energy Loss Spectroscopy
Authors:
Y. Y. Wang,
F. C. Zhang,
V. P. Dravid,
K. K. Ng,
M. V. Klein,
S. E. Schnatterly,
L. L. Miller
Abstract:
Electron-hole pair excitations in the insulating cuprates $Sr_2CuO_2Cl_2$ were investigated by angle-resolved electron energy loss spectroscopy. The optically allowed and optically forbidden transitions were observed to be strongly anisotropic in $Cu-O_2$ plane. The former show a large energy dispersion $\sim 1.5$eV along [110], and the latter appear at a higher energy position ($\sim 4.5$eV) on…
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Electron-hole pair excitations in the insulating cuprates $Sr_2CuO_2Cl_2$ were investigated by angle-resolved electron energy loss spectroscopy. The optically allowed and optically forbidden transitions were observed to be strongly anisotropic in $Cu-O_2$ plane. The former show a large energy dispersion $\sim 1.5$eV along [110], and the latter appear at a higher energy position ($\sim 4.5$eV) only along [100], but not along [110]. We interpret these results as transitions involving excitons. A small exciton model is examined to explain both the observed features.
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Submitted 10 June, 1996;
originally announced June 1996.
