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Showing 1–7 of 7 results for author: Wang, D Q

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  1. arXiv:2404.04592  [pdf, other

    cond-mat.mes-hall

    Quantum magnetic oscillations in the absence of closed electron trajectories

    Authors: Z. E. Krix, O. A. Tkachenko, V. A. Tkachenko, D. Q. Wang, O. Klochan, A. R. Hamilton, O. P. Sushkov

    Abstract: Quantum magnetic oscillations in crystals are typically understood in terms of Bohr-Sommerfeld quantisation, the frequency of oscillation is given by the area of a closed electron trajectory. However, since the 1970s, oscillations have been observed with frequencies that do not correspond to closed electron trajectories and this effect has remained not fully understood. Previous theory has focused… ▽ More

    Submitted 6 April, 2024; originally announced April 2024.

    Comments: 15 pages, 10 figures

  2. arXiv:2403.07273  [pdf, ps, other

    cond-mat.mes-hall cond-mat.str-el

    Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential

    Authors: D. Q. Wang, D. Reuter, A. D. Wieck, A. R. Hamilton, O. Klochan

    Abstract: We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow heterostructures; (2) enables independent control of the carrier density and the superlattice modulation potential amplitude over a wide range. We characterise th… ▽ More

    Submitted 11 March, 2024; originally announced March 2024.

    Comments: 4 pages, 3 figures

  3. arXiv:2403.06426  [pdf, other

    cond-mat.mes-hall cond-mat.str-el

    Formation of artificial Fermi surfaces with a triangular superlattice on a conventional two dimensional electron gas

    Authors: Daisy Q. Wang, Zeb Krix, Oleg P. Sushkov, Ian Farrer, David A. Ritchie, Alexander R. Hamilton, Oleh Klochan

    Abstract: In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties differen… ▽ More

    Submitted 11 March, 2024; originally announced March 2024.

    Comments: 19 pages, 6 figures

  4. arXiv:2402.12769  [pdf, other

    cond-mat.mes-hall

    Tuning the bandstructure of electrons in a two-dimensional artificial electrostatic crystal in GaAs quantum wells

    Authors: Daisy Q. Wang, Zeb Krix, Olga A. Tkachenko, Vitaly A. Tkachenko, Chong Chen, Ian Farrer, David A. Ritchie, Oleg P. Sushkov, Alexander R. Hamilton, Oleh Klochan

    Abstract: The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest w… ▽ More

    Submitted 20 February, 2024; originally announced February 2024.

    Comments: 30 pages, 11 figures

  5. Geometric control of universal hydrodynamic flow in a two dimensional electron fluid

    Authors: Aydın Cem Keser, Daisy Q. Wang, Oleh Klochan, Derek Y. H. Ho, Olga A. Tkachenko, Vitaly A. Tkachenko, Dimitrie Culcer, Shaffique Adam, Ian Farrer, David A. Ritchie, Oleg P. Sushkov, Alexander R. Hamilton

    Abstract: Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However in the hydrodynamic regime Coulomb interactions transform the electron motion from independent particles to the collective motion… ▽ More

    Submitted 17 March, 2021; originally announced March 2021.

    Journal ref: Phys. Rev. X 11, 031030 (2021)

  6. Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

    Authors: Daisy Q. Wang, Oleh Klochan, Jo-Tzu Hung, Dimitrie Culcer, Ian Farrer, David A. Ritchie, Alexander R. Hamilton

    Abstract: Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly du… ▽ More

    Submitted 3 December, 2016; originally announced December 2016.

    Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright ©American Chemical Society after peer review. To access the final edited and published work see http://pubs.acs.org/doi/full/10.1021/acs.nanolett.6b03752, Nano Letters, published online 24 Nov, 2016

  7. arXiv:1204.0827  [pdf, ps, other

    cond-mat.mes-hall

    Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

    Authors: J. C. H. Chen, D. Q. Wang, O. Klochan, A. P. Micolich, K. Das Gupta, F. Sfigakis, D. A. Ritchie, D. Reuter, A. D. Wieck, A. R. Hamilton

    Abstract: We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons (… ▽ More

    Submitted 3 April, 2012; originally announced April 2012.

    Comments: related papers at http://www.phys.unsw.edu.au/qed

    Journal ref: Applied Physics Letters 100, 052101 (2012)