Showing 1–14 of 14 results for author: Walter, A L

Ultrathin Magnesium-based Coating as an Efficient Oxygen Barrier for Superconducting Circuit Materials

Authors: Chenyu Zhou, Junsik Mun, Juntao Yao, Aswin kumar Anbalagan, Mohammad D. Hossain, Russell A. McLellan, Ruoshui Li, Kim Kisslinger, Gengnan Li, Xiao Tong, Ashley R. Head, Conan Weiland, Steven L. Hulbert, Andrew L. Walter, Qiang Li, Yimei Zhu, Peter V. Sushko, Mingzhao Liu

Abstract: Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately… ▽ More Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately placing a limit on the coherence time. In this study, we present a novel approach for suppressing the formation of tantalum oxide using an ultrathin magnesium (Mg) cap** layer deposited on top of tantalum. Synchrotron-based X-ray photoelectron spectroscopy (XPS) studies demonstrate that oxide is confined to an extremely thin region directly beneath the Mg/Ta interface. Additionally, we demonstrate that the superconducting properties of thin Ta films are improved following the Mg cap**, exhibiting sharper and higher-temperature transitions to superconductive and magnetically ordered states. Based on the experimental data and computational modeling, we establish an atomic-scale mechanistic understanding of the role of the cap** layer in protecting Ta from oxidation. This work provides valuable insights into the formation mechanism and functionality of surface tantalum oxide, as well as a new materials design principle with the potential to reduce dielectric loss in superconducting quantum materials. Ultimately, our findings pave the way for the realization of large-scale, high-performance quantum computing systems. △ Less

Submitted 25 September, 2023; v1 submitted 21 September, 2023; originally announced September 2023.

Chemical profiles of the oxides on tantalum in state of the art superconducting circuits

Authors: Russell A. McLellan, Aveek Dutta, Chenyu Zhou, Yichen Jia, Conan Weiland, Xin Gui, Alexander P. M. Place, Kevin D. Crowley, Xuan Hoang Le, Trisha Madhavan, Youqi Gang, Lukas Baker, Ashley R. Head, Iradwikanari Waluyo, Ruoshui Li, Kim Kisslinger, Adrian Hunt, Ignace Jarrige, Stephen A. Lyon, Andi M. Barbour, Robert J. Cava, Andrew A. Houck, Steven L. Hulbert, Mingzhao Liu, Andrew L. Walter , et al. (1 additional authors not shown)

Abstract: Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently… ▽ More Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently showed that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, we study the chemical profile of the surface of tantalum films grown on c-plane sapphire using variable energy X-ray photoelectron spectroscopy (VEXPS). We identify the different oxidation states of tantalum that are present in the native oxide resulting from exposure to air, and we measure their distribution through the depth of the film. Furthermore, we show how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. By correlating these measurements with detailed measurements of quantum devices, we can improve our understanding of the microscopic device losses. △ Less

Submitted 20 January, 2023; v1 submitted 11 January, 2023; originally announced January 2023.

In situ investigation of conducting interface formation in LaAlO3/SrTiO3 heterostructure

Authors: Hyang Keun Yoo, Luca Moreschini, Aaron Bostwick, Andrew L. Walter, Tae Won Noh, Eli Rotenberg, Young Jun Chang

Abstract: The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed… ▽ More The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed a built-in potential (V_{bi}) proportional to the polar LAO thickness starting from the first unit cell (UC) with CI formation appearing above 3 UCs. However, we found that the V bi is removed by synchrotron ultraviolet (UV)-irradiation; The built-in potential is recovered by oxygen gas (O_{2}(g))-exposure. Furthermore, after UV-irradiation, the CI appears even below 3UC of LAO. Our results demonstrate not only the V_{bi}-driven CI formation in asgrown LAO/STO, but also a new route to control of the interface state by UV lithographic patterning or other surface modification. △ Less

Submitted 12 May, 2021; originally announced May 2021.

Comments: 18 pages, 4 figures

Enhanced tunability of two-dimensional electron gas on SrTiO3 through heterostructuring

Authors: Hyang Keun Yoo, Luca Moreschini, Andrew L. Walter, Aaron Bostwick, Karsten Horn, Eli Rotenberg, Young Jun Chang

Abstract: Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO3 (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the… ▽ More Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO3 (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the 2DEG in LTO/STO is increased by a factor of ~4 times, compared to that of the bare STO. By oxygen gas exposure, it becomes 10 times smaller than that of the bare STO. This enhanced tunability is attributed to the drastic surface property change of a polar LTO layer by UV irradiation and O2 exposure. This indicates that the 2DEG controllability in LTO/STO is more reliable than that on the bare STO driven by defects, such an oxygen vacancy. △ Less

Submitted 12 May, 2021; originally announced May 2021.

Comments: 19 pages, 4 figures

Journal ref: Current Applied Physics 20, 1268 (2020)

Electronic Instability in a Zero-Gap Semiconductor: the Charge-Density Wave in (TaSe4)2I

Authors: C. Tournier-Colletta, L. Moreschini, G. Autès, S. Moser, A. Crepaldi, H. Berger, A. L. Walter, K. S. Kim, A. Bostwick, P. Monceau, E. Rotenberg, O. V. Yazyev, M. Grioni

Abstract: We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the non-distorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the CDW formation b… ▽ More We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the non-distorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the CDW formation below T_CDW = 263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T_CDW. △ Less

Submitted 22 March, 2013; originally announced March 2013.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 110, 236401 (2013)

Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene

Authors: Keun Su Kim, Tae-Hwan Kim, Andrew L. Walter, Thomas Seyller, Han Woong Yeom, Eli Rotenberg, Aaron Bostwick

Abstract: We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singulari… ▽ More We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunneling contact are found to strongly impact on NDR through the electron interference. Our result provides an atomic-level understanding of quantum tunneling in bilayer graphene, and constitutes a useful step towards graphene-based tunneling devices. △ Less

Submitted 2 January, 2013; originally announced January 2013.

Comments: 6 pages, 5 figures, accepted for publication in Physical Review Letters

Journal ref: Phys. Rev. Lett. 110, 036804 (2013)

Small scale rotational disorder observed in epitaxial graphene on SiC(0001)

Authors: Andrew L. Walter, Aaron Bostwick, Florian Speck, Markus Ostler, Keun Su Kim, Young Jun Chang, Luca Moreschini, Davide Innocenti, Thomas Seyller, Karsten Horn, Eli Rotenberg

Abstract: Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by angle-resolved photoelectron spectroscopy (ARPES). Indeed, ARPES has been performed on graphene grown on metal substrates but electronic applications require an insulat… ▽ More Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by angle-resolved photoelectron spectroscopy (ARPES). Indeed, ARPES has been performed on graphene grown on metal substrates but electronic applications require an insulating substrate. Epitaxial graphene grown by the thermal decomposition of silicon carbide (SiC) is an ideal candidate for this due to the large scale, uniform graphene layers produced. The experimental spectral function of epitaxial graphene on SiC has been extensively studied. However, until now the cause of an anisotropy in the spectral width of the Fermi surface has not been determined. In the current work we show, by comparison of the spectral function to a semi-empirical model, that the anisotropy is due to small scale rotational disorder ($\sim\pm$ 0.15$^{\circ}$) of graphene domains in graphene grown on SiC(0001) samples. In addition to the direct benefit in the understanding of graphene's electronic structure this work suggests a mechanism to explain similar variations in related ARPES data. △ Less

Submitted 21 September, 2012; originally announced September 2012.

Comments: 5 pages, 4 figures

Intrinsic Terahertz Plasmons and Magnetoplasmons in Large Scale Monolayer Graphene

Authors: I. Crassee, M. Orlita, M. Potemski, A. L. Walter, M. Ostler, Th. Seyller, I. Gaponenko, J. Chen, A. B. Kuzmenko

Abstract: We show that in graphene epitaxially grown on SiC the Drude absorption is transformed into a strong terahertz plasmonic peak due to natural nanoscale inhomogeneities, such as substrate terraces and wrinkles. The excitation of the plasmon modifies dramatically the magneto-optical response and in particular the Faraday rotation. This makes graphene a unique playground for plasmon-controlled magneto-… ▽ More We show that in graphene epitaxially grown on SiC the Drude absorption is transformed into a strong terahertz plasmonic peak due to natural nanoscale inhomogeneities, such as substrate terraces and wrinkles. The excitation of the plasmon modifies dramatically the magneto-optical response and in particular the Faraday rotation. This makes graphene a unique playground for plasmon-controlled magneto-optical phenomena thanks to a cyclotron mass 2 orders of magnitude smaller than in conventional plasmonic materials such as noble metals. △ Less

Submitted 26 April, 2012; v1 submitted 19 April, 2012; originally announced April 2012.

Comments: to appear in Nano Letters

Journal ref: Nano Lett., 12, 2470 (2012)

Extraordinary epitaxial alignment of graphene islands on Au(111)

Authors: Joseph M. Wofford, Elena Starodub, Andrew L. Walter, Shu Nie, Aaron Bostwick, Norman C. Bartelt, Konrad Thürmer, Eli Rotenberg, Kevin F. McCarty, Oscar D. Dubon

Abstract: Pristine, single-crystalline graphene displays a unique collection of remarkable electronic properties that arise from its two-dimensional, honeycomb structure. Using in-situ low-energy electron microscopy, we show that when deposited on the (111) surface of Au carbon forms such a structure. The resulting monolayer, epitaxial film is formed by the coalescence of dendritic graphene islands that nuc… ▽ More Pristine, single-crystalline graphene displays a unique collection of remarkable electronic properties that arise from its two-dimensional, honeycomb structure. Using in-situ low-energy electron microscopy, we show that when deposited on the (111) surface of Au carbon forms such a structure. The resulting monolayer, epitaxial film is formed by the coalescence of dendritic graphene islands that nucleate at a high density. Over 95% of these islands can be identically aligned with respect to each other and to the Au substrate. Remarkably, the dominant island orientation is not the better lattice-matched 30^{\circ} rotated orientation but instead one in which the graphene [01] and Au [011] in-plane directions are parallel. The epitaxial graphene film is only weakly coupled to the Au surface, which maintains its reconstruction under the slightly p-type doped graphene. The linear electronic dispersion characteristic of free-standing graphene is retained regardless of orientation. That a weakly interacting, non-lattice matched substrate is able to lock graphene into a particular orientation is surprising. This ability, however, makes Au(111) a promising substrate for the growth of single crystalline graphene films. △ Less

Submitted 4 May, 2012; v1 submitted 2 February, 2012; originally announced February 2012.

Journal ref: 2012 New J. Phys. 14 053008

Electronic structure of graphene on single crystal copper substrates

Authors: Andrew L. Walter, Shu Nie, Aaron Bostwick, Keun Su Kim, Luca Moreschini, Young Jun Chang, Davide Innocenti, Karsten Horn, Kevin F. McCarty, Eli Rotenberg

Abstract: The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene is rotationally disordered and interactions between the graphene and substrate lead to a shift in the Dirac crossing of $\sim$ -0.3 eV and the opening of a… ▽ More The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene is rotationally disordered and interactions between the graphene and substrate lead to a shift in the Dirac crossing of $\sim$ -0.3 eV and the opening of a $\sim$ 250 meV gap. Exposure of the samples to air resulted in intercalation of oxygen under the graphene on Cu(100), which formed a ($\sqrt{2} \times 2\sqrt{2}$)R45$^{\rm o}$ superstructure. The effect of this intercalation on the graphene $π$ bands is to increase the offset of the Dirac crossing ($\sim$ -0.6 eV) and enlarge the gap ($\sim$ 350 meV). No such effect is observed for the graphene on Cu(111) sample, with the surface state at $Γ$ not showing the gap associated with a surface superstructure. The graphene film is found to protect the surface state from air exposure, with no change in the effective mass observed. △ Less

Submitted 9 August, 2011; originally announced August 2011.

Effective screening and the plasmaron bands in Graphene

Authors: Andrew L. Walter, Aaron Bostwick, Ki-Joon Jeon, Florian Speck, Markus Ostler, Thomas Seyller, Luca Moreschini, Young Jun Chang, Marco Polini, Reza Asgari, Allan H. MacDonald, Karsten Horn, Eli Rotenberg

Abstract: Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evalua… ▽ More Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evaluating the separation of the plasmaron bands from the hole bands using Angle Resolved PhotoEmission Spectroscopy. Comparison with G0W-RPA predictions are used to determine the effective dielectric constant of the underlying substrate layer. We also show that plasmaron and electronic properties of graphene can be independently manipulated, an important aspect of a possible use in "plasmaronic" devices. △ Less

Submitted 21 July, 2011; originally announced July 2011.

Multi-component magneto-optical conductivity of multilayer graphene on SiC

Authors: I. Crassee, J. Levallois, D. van der Marel, A. L. Walter, Th. Seyller, A. B. Kuzmenko

Abstract: Far-infrared diagonal and Hall conductivities of multilayer epitaxial graphene on the C-face of SiC were measured using magneto-optical absorption and Faraday rotation in magnetic fields up to 7 T and temperatures between 5 and 300 K. Multiple components are identified in the spectra, which include: (i) a quasi-classical cyclotron resonance (CR), originating from the highly doped graphene layer cl… ▽ More Far-infrared diagonal and Hall conductivities of multilayer epitaxial graphene on the C-face of SiC were measured using magneto-optical absorption and Faraday rotation in magnetic fields up to 7 T and temperatures between 5 and 300 K. Multiple components are identified in the spectra, which include: (i) a quasi-classical cyclotron resonance (CR), originating from the highly doped graphene layer closest to SiC, (ii) transitions between low-index Landau levels (LLs), which stem from weakly doped layers and (iii) a broad optical absorption background. Electron and hole type LL transitions are optically distinguished and shown to coexist. An electron-hole asymmetry of the Fermi velocity of about 2% was found within one graphene layer, while the Fermi velocity varies by about 10% across the layers. The optical intensity of the LL transitions is several times smaller than what is theoretically expected for isolated graphene monolayers without electron-electron and electron-phonon interactions. △ Less

Submitted 24 May, 2011; originally announced May 2011.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. B 84, 035103 (2011)

Highly p-doped graphene obtained by fluorine intercalation

Authors: Andrew L. Walter, Ki-Joon Jeon, Aaron Bostwick, Florian Speck, Markus Ostler, Thomas Seyller, Luca Moreschini, Yong Su Kim, Young Jun Chang, Karsten Horn, Eli Rotenberg

Abstract: We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi l… ▽ More We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED . △ Less

Submitted 14 April, 2011; originally announced April 2011.

Comments: 4 pages, 2 figures, in print APL

Giant Faraday rotation in single- and multilayer graphene

Authors: Iris Crassee, Julien Levallois, Andrew L. Walter, Markus Ostler, Aaron Bostwick, Eli Rotenberg, Thomas Seyller, Dirk van der Marel, Alexey B. Kuzmenko

Abstract: Optical Faraday rotation is one of the most direct and practically important manifestations of magnetically broken time-reversal symmetry. The rotation angle is proportional to the distance traveled by the light, and up to now sizeable effects were observed only in macroscopically thick samples and in two-dimensional electron gases with effective thicknesses of several nanometers. Here we demonstr… ▽ More Optical Faraday rotation is one of the most direct and practically important manifestations of magnetically broken time-reversal symmetry. The rotation angle is proportional to the distance traveled by the light, and up to now sizeable effects were observed only in macroscopically thick samples and in two-dimensional electron gases with effective thicknesses of several nanometers. Here we demonstrate that a single atomic layer of carbon - graphene - turns the polarization by several degrees in modest magnetic fields. The rotation is found to be strongly enhanced by resonances originating from the cyclotron effect in the classical regime and the inter-Landau-level transitions in the quantum regime. Combined with the possibility of ambipolar do**, this opens pathways to use graphene in fast tunable ultrathin infrared magneto-optical devices. △ Less

Submitted 29 July, 2010; originally announced July 2010.

Journal ref: Nature Physics 7, 48 (2011)