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Adaptative Diffraction Image Registration for 4D-STEM to optimize ACOM Pattern Matching
Authors:
Nicolas Folastre,
Junhao Cao,
Gozde Oney,
Sunkyu Park,
Arash Jamali,
Christian Masquelier,
Laurence Croguennec,
Muriel Veron,
Edgar F. Rauch,
Arnaud Demortière
Abstract:
The technique known as 4D-STEM has recently emerged as a powerful tool for the local characterization of crystalline structures in materials, such as cathode materials for Li-ion batteries or perovskite materials for photovoltaics. However, the use of new detectors optimized for electron diffraction patterns and other advanced techniques requires constant adaptation of methodologies to address the…
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The technique known as 4D-STEM has recently emerged as a powerful tool for the local characterization of crystalline structures in materials, such as cathode materials for Li-ion batteries or perovskite materials for photovoltaics. However, the use of new detectors optimized for electron diffraction patterns and other advanced techniques requires constant adaptation of methodologies to address the challenges associated with crystalline materials. In this study, we present a novel image processing method to improve pattern matching in the determination of crystalline orientations and phases. Our approach uses sub-pixelar adaptative image processing to register and reconstruct electron diffraction signals in large 4D-STEM datasets. By using adaptive prominence and linear filters such as mean and gaussian blur, we are able to improve the quality of the diffraction pattern registration. The resulting data compression rate of 103 is well-suited for the era of big data and provides a significant enhancement in the performance of the entire ACOM data processing method. Our approach is evaluated using dedicated metrics, which demonstrate a high improvement in phase recognition. Our results demonstrate that this data preparation method not only enhances the quality of the resulting image but also boosts the confidence level in the analysis of the outcomes related to determining crystal orientation and phase. Additionally, it mitigates the impact of user bias that may occur during the application of the method through the manipulation of parameters.
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Submitted 3 May, 2023;
originally announced May 2023.
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Crystallization Mechanism Tuned Phase-Change Materials: Quantum Effect on Te-Terminated Boundary
Authors:
Wen-Xiong Song,
Qiongyan Tang,
** Zhao,
Muriel Veron,
Xilin Zhou,
Yonghui Zheng,
Daolin Cai,
Yan Cheng,
Tianjiao Xin,
Zhi-Pan Liu,
Zhitang Song
Abstract:
While phase-change materials (PCMs) composed of chalcogenide have different crystallization mechanisms (CM), such as nucleation-dominated Ge2Sb2Te5 (GST) and growth-dominated GeTe (GT), revealing the essential reason of CM as well as the tuned properties is still a long-standing issue. Here, we remarkably find the distinct stability of Te-terminated (111) boundaries (TTB) in different systems, whi…
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While phase-change materials (PCMs) composed of chalcogenide have different crystallization mechanisms (CM), such as nucleation-dominated Ge2Sb2Te5 (GST) and growth-dominated GeTe (GT), revealing the essential reason of CM as well as the tuned properties is still a long-standing issue. Here, we remarkably find the distinct stability of Te-terminated (111) boundaries (TTB) in different systems, which provides a path to understand the difference in CM. It stems from the quantum effect of molecular orbital theory: the optimal local chemical composition results in the formation of TTB without dangling bonds (DB) in GST but with DB in GT, where DB destabilizes boundary due to its distorted local environment mismatching Oh symmetry of p orbitals. Moreover, the inner vacancy concentration in GST is alterable and controlled by TTB, manifested by the absence of cubic-to-hexagonal transition in carbon-doped GST of small grains and minimized inner vacancy. Finally, the charge transport property (CTP) is controlled by boundary via changing the density of charge or hole nearby as well as vacancy. These findings open the door to tune CTP by CM, which is necessary for achieving low-power and ultrafast devices.
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Submitted 22 November, 2020;
originally announced November 2020.
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Medium range structural order in amorphous tantala spatially resolved with changes to atomic structure by thermal annealing
Authors:
Martin J. Hart,
Riccardo Bassiri,
Konstantin B. Borisenko,
Muriel Véron,
Edgar F. Rauch,
Iain W. Martin,
Sheila Rowan,
Martin M. Fejer,
Ian MacLaren
Abstract:
Amorphous tantala (a-Ta2O5) is an important technological material that has wide ranging applications in electronics, optics and the biomedical industry. It is used as the high refractive index layers in the multi-layer dielectric mirror coatings in the latest generation of gravitational wave interferometers, as well as other precision interferometers. One of the current limitations in sensitivity…
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Amorphous tantala (a-Ta2O5) is an important technological material that has wide ranging applications in electronics, optics and the biomedical industry. It is used as the high refractive index layers in the multi-layer dielectric mirror coatings in the latest generation of gravitational wave interferometers, as well as other precision interferometers. One of the current limitations in sensitivity of gravitational wave detectors is Brownian thermal noise that arises from the tantala mirror coatings. Measurements have shown differences in mechanical loss of the mirror coatings, which is directly related to Brownian thermal noise, in response to thermal annealing. We utilise scanning electron diffraction to perform Fluctuation Electron Microscopy (FEM) on Ion Beam Sputtered (IBS) amorphous tantala coatings, definitively showing an increase in the medium range order (MRO), as determined from the variance between the diffraction patterns in the scan, due to thermal annealing at increasing temperatures. Moreover, we employ Virtual Dark-Field Imaging (VDFi) to spatially resolve the FEM signal, enabling investigation of the persistence of the fragments responsible for the medium range order, as well as the extent of the ordering over nm length scales, and show ordered patches larger than 5 nm in the highest temperature annealed sample. These structural changes directly correlate with the observed changes in mechanical loss.
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Submitted 29 March, 2016; v1 submitted 4 August, 2015;
originally announced August 2015.
