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Spectroscopic evidence of flat bands in breathing kagome semiconductor Nb3I8
Authors:
Sabin Regmi,
Tharindu Fernando,
Yuzhou Zhao,
Anup Pradhan Sakhya,
Gyanendra Dhakal,
Iftakhar Bin Elius,
Hector Vazquez,
Jonathan D Denlinger,
Jihui Yang,
Jiun-Haw Chu,
Xiaodong Xu,
Ting Cao,
Madhab Neupane
Abstract:
Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, semiconductors Nb3X8(X = Cl, Br, I) have been predicted to be two-dimensional (2D) magnets and importantly these materials possess breathing kagome geometry. Electronic structure study of these promising materials is still lacking. Here, we report the spectroscopic evid…
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Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, semiconductors Nb3X8(X = Cl, Br, I) have been predicted to be two-dimensional (2D) magnets and importantly these materials possess breathing kagome geometry. Electronic structure study of these promising materials is still lacking. Here, we report the spectroscopic evidence of at and weakly dispersing bands in breathing-kagome semiconductor Nb3I8 around 500 meV binding energy, which is well supported by our first-principles calculations. These bands originate from the breathing kagome lattice of Niobium atoms and have Nb d character. They are found to be sensitive to polarization of the incident photon beam. Our study provides insight into the electronic structure and at band topology in an exfoliable kagome semiconductor thereby providing an important platform to understand the interaction of geometry and electron correlations in 2D material.
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Submitted 21 December, 2022; v1 submitted 20 March, 2022;
originally announced March 2022.
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Electron cascades and secondary electron emission in graphene under energetic ion irradiation
Authors:
Henrique Vázquez,
Alina Kononov,
Andreas Kyritsakis,
Nikita Medvedev,
André Schleife,
Flyura Djurabekova
Abstract:
Highly energetic ions traversing a two-dimensional material such as graphene produce strong electronic excitations. Electrons excited to energy states above the work function can give rise to secondary electron emission, reducing the amount of energy that remains the graphene after the ion impact. Electrons can either be emitted (kinetic energy transfer) or captured by the passing ion (potential e…
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Highly energetic ions traversing a two-dimensional material such as graphene produce strong electronic excitations. Electrons excited to energy states above the work function can give rise to secondary electron emission, reducing the amount of energy that remains the graphene after the ion impact. Electrons can either be emitted (kinetic energy transfer) or captured by the passing ion (potential energy transfer). To elucidate this behavior that is absent in three-dimensional materials, we simulate the electron dynamics in graphene during the first femtoseconds after ion impact. We employ two conceptually different computational methods: a Monte Carlo (MC) based one, where electrons are treated as classical particles, and time-dependent density functional theory (TDDFT), where electrons are described quantum-mechanically. We observe that the linear dependence of electron emission on deposited energy, emerging from MC simulations, becomes sublinear and closer to the TDDFT values when the electrostatic interactions of emitted electrons with graphene are taken into account via complementary particle-in-cell simulations. Our TDDFT simulations show that the probability for electron capture decreases rapidly with increasing ion velocity, whereas secondary electron emission dominates in the high velocity regime. We estimate that these processes reduce the amount of energy deposited in the graphene layer by 15\,\% to 65\,\%, depending on the ion and its velocity. This finding clearly shows that electron emission must be taken into consideration when modelling damage production in two-dimensional materials under ion irradiation.
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Submitted 30 November, 2020;
originally announced November 2020.
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Submolecular resolution by variation of IETS amplitude and its relation to AFM/STM signal
Authors:
Bruno de la Torre,
Martin Švec,
Giuseppe Foti,
Ondřej Krejčí,
Prokop Hapala,
Aran Garcia-Lekue,
Thomas Frederiksen,
Radek Zbořil,
Andrés Arnau,
Héctor Vázquez,
Pavel Jelínek
Abstract:
Here we show scanning tunnelling microscopy (STM), non-contact atomic force microscopy (AFM) and inelastic electron tunnelling spectroscopy (IETS) measurements on organic molecule with a CO- terminated tip at 5K. The high-resolution contrast observed simultaneously in all channels unam- biguously demonstrates the common imaging mechanism in STM/AFM/IETS, related to the lateral bending of the CO-fu…
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Here we show scanning tunnelling microscopy (STM), non-contact atomic force microscopy (AFM) and inelastic electron tunnelling spectroscopy (IETS) measurements on organic molecule with a CO- terminated tip at 5K. The high-resolution contrast observed simultaneously in all channels unam- biguously demonstrates the common imaging mechanism in STM/AFM/IETS, related to the lateral bending of the CO-functionalized tip. The IETS spectroscopy reveals that the submolecular con- trast at 5K consists of both renormalization of vibrational frequency and variation of the amplitude of IETS signal. This finding is also corroborated by first principles simulations. We extend accord- ingly the probe-particle AFM/STM/IETS model to include these two main ingredients necessary to reproduce the high-resolution IETS contrast. We also employ the first principles simulations to get more insight into different response of frustrated translation and rotational modes of CO-tip during imaging.
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Submitted 17 October, 2017;
originally announced October 2017.
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Highly Conducting pi-Conjugated Molecular Junctions Covalently Bonded to Gold Electrodes
Authors:
Wenbo Chen,
Jonathan R. Widawsky,
Héctor Vázquez,
Severin T. Schneebeli,
Mark S. Hybertsen,
Ronald Breslow,
Latha Venkataraman
Abstract:
We measure electronic conductance through single conjugated molecules bonded to Au metal electrodes with direct Au-C covalent bonds using the scanning tunneling microscope based break-junction technique. We start with molecules terminated with trimethyltin end groups that cleave off in situ resulting in formation of a direct covalent sigma bond between the carbon backbone and the gold metal electr…
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We measure electronic conductance through single conjugated molecules bonded to Au metal electrodes with direct Au-C covalent bonds using the scanning tunneling microscope based break-junction technique. We start with molecules terminated with trimethyltin end groups that cleave off in situ resulting in formation of a direct covalent sigma bond between the carbon backbone and the gold metal electrodes. The molecular carbon backbone used in this study consist of a conjugated pi-system that has one terminal methylene group on each end, which bonds to the electrodes, achieving large electronic coupling of the electrodes to the pi-system. The junctions formed with the prototypical example of 1,4-dimethylenebenzene show a conductance approaching one conductance quantum (G0 = 2e2/h). Junctions formed with methylene terminated oligophenyls with two to four phenyl units show a hundred-fold increase in conductance compared with junctions formed with amine-linked oligophenyls. The conduction mechanism for these longer oligophenyls is tunneling as they exhibit an exponential dependence of conductance with oligomer length. In addition, density functional theory based calculations for the Au-xylylene-Au junction show near-resonant transmission with a cross-over to tunneling for the longer oligomers.
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Submitted 3 October, 2011;
originally announced October 2011.
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Dipole formation at metal/PTCDA interfaces: Role of the Charge Neutrality Level
Authors:
H. Vazquez,
R. Oszwaldowski,
P. Pou,
J. Ortega,
R. Perez,
F. Flores,
A. Kahn
Abstract:
The formation of a metal/PTCDA (3, 4, 9, 10-perylenetetracarboxylic dianhydride) interface barrier is analyzed using weak-chemisorption theory. The electronic structure of the uncoupled PTCDA molecule and of the metal surface is calculated. Then, the induced density of interface states is obtained as a function of these two electronic structures and the interaction between both systems. This ind…
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The formation of a metal/PTCDA (3, 4, 9, 10-perylenetetracarboxylic dianhydride) interface barrier is analyzed using weak-chemisorption theory. The electronic structure of the uncoupled PTCDA molecule and of the metal surface is calculated. Then, the induced density of interface states is obtained as a function of these two electronic structures and the interaction between both systems. This induced density of states is found to be large enough (even if the metal/PTCDA interaction is weak) for the definition of a Charge Neutrality Level for PTCDA, located 2.45 eV above the highest occupied molecular orbital. We conclude that the metal/PTCDA interface molecular level alignment is due to the electrostatic dipole created by the charge transfer between the two solids.
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Submitted 21 May, 2004;
originally announced May 2004.
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Barrier formation at metal/organic interfaces: dipole formation and the Charge Neutrality Level
Authors:
H. Vazquez,
F. Flores,
R. Oszwaldowski,
J. Ortega,
R. Perez,
A. Kahn
Abstract:
The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the Charge Neutrality Levels of several organic molecules (PTCDA, PTCBI and CBP…
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The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the Charge Neutrality Levels of several organic molecules (PTCDA, PTCBI and CBP) and the interface Fermi level for their contact with a Au(111) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.
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Submitted 21 May, 2004;
originally announced May 2004.
