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Finite element analysis of ion-implanted diamond surface swelling
Authors:
F. Bosia,
P. Olivero,
E. Vittone,
F. Picollo,
A. Lo Giudice,
M. Jaksic,
N. Skukan,
L. Giuntini,
M. Massi,
S. Calusi,
M. Vannoni,
S. Lagomarsino,
S. Sciortino
Abstract:
We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to experimental data for MeV proton and helium implantations, performed with scanning ion microbeams. Swelling values are measured with white light interf…
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We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to experimental data for MeV proton and helium implantations, performed with scanning ion microbeams. Swelling values are measured with white light interferometric profilometry in both cases. Simulations are based on a model which accounts for the through-the-thickness variation of mechanical parameters in the material, as a function of ion type, fluence and energy. Surface deformation profiles and internal stress distributions are analyzed and numerical results are seen to adequately fit experimental data. Results allow us to draw conclusions on structural damage mechanisms in diamond for different MeV ion implantations.
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Submitted 29 August, 2016;
originally announced August 2016.
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Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitization
Authors:
P. Olivero,
G. Amato,
F. Bellotti,
O. Budnyk,
E. Colombo,
M. Jaksic,
A. Lo Giudice,
C. Manfredotti,
Z. Pastuovic,
F. Picollo,
N. Skukan,
M. Vannoni,
E. Vittone
Abstract:
We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows the formation of conductive channels which are embedded in the insulating matrix at controllable depths. In particular, the modulation of the channel…
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We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows the formation of conductive channels which are embedded in the insulating matrix at controllable depths. In particular, the modulation of the channels depth at their endpoints allows the surface contacting of the channel terminations with no need of further fabrication stages. In the present work we describe the sample masking, which includes the deposition of semi spherical gold contacts on the sample surface, followed by MeV ion implantation. Because of the significant difference between the densities of pristine and amorphous or graphitized diamond, the formation of buried channels has a relevant mechanical effect on the diamond structure, causing localized surface swelling, which has been measured both with interferometric profilometry and atomic force microscopy. The electrical properties of the buried channels are then measured with a two point probe station: clear evidence is given that only the terminal points of the channels are electrically connected with the surface, while the rest of the channels extends below the surface. IV measurements are employed also to qualitatively investigate the electrical properties of the channels as a function of implantation fluence and annealing.
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Submitted 26 August, 2016;
originally announced August 2016.
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Controlled variation of the refractive index in ion-damaged diamond
Authors:
P. Olivero,
S. Calusi,
L. Giuntini,
S. Lagomarsino,
A. Lo Giudice,
M. Massi,
S. Sciortino,
M. Vannoni,
E. Vittone
Abstract:
A fine control of the variation of the refractive index as a function of structural damage is essential in the fabrication of diamond-based optical and photonic devices. We report here about the variation of the real part of the refractive index at lambda=632.8 nm in high quality single crystal diamond damaged with 2 and 3 MeV protons at low-medium fluences (10^13 - 10^17 ions cm^-2). After implan…
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A fine control of the variation of the refractive index as a function of structural damage is essential in the fabrication of diamond-based optical and photonic devices. We report here about the variation of the real part of the refractive index at lambda=632.8 nm in high quality single crystal diamond damaged with 2 and 3 MeV protons at low-medium fluences (10^13 - 10^17 ions cm^-2). After implanting the samples in 125x125 um^2 areas with a raster scanning ion microbeam, the variation of optical thickness of the implanted regions was measured with laser interferometric microscopy. The results were analyzed with a model based on the specific damage profile. The technique allows the direct fabrication of optical structures in bulk diamond based on the localized variation of the refractive index, which will be explored in future works.
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Submitted 26 August, 2016;
originally announced August 2016.
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Modification of the structure of diamond with MeV ion implantation
Authors:
F. Bosia,
N. Argiolas,
M. Bazzan,
P. Olivero,
F. Picollo,
A. Sordini,
M. Vannoni,
E. Vittone
Abstract:
We present experimental results and numerical simulations to investigate the modification of structural-mechanical properties of ion-implanted single-crystal diamond. A phenomenological model is used to derive an analytical expression for the variation of mass density and elastic properties as a function of damage density in the crystal. These relations are applied together with SRIM Monte Carlo s…
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We present experimental results and numerical simulations to investigate the modification of structural-mechanical properties of ion-implanted single-crystal diamond. A phenomenological model is used to derive an analytical expression for the variation of mass density and elastic properties as a function of damage density in the crystal. These relations are applied together with SRIM Monte Carlo simulations to set up Finite Element simulations for the determination of internal strains and surface deformation of MeV-ion-implanted diamond samples. The results are validated through comparison with high resolution X-ray diffraction and white-light interferometric profilometry experiments. The former are carried out on 180 keV B implanted diamond samples, to determine the induced structural variation, in terms of lattice spacing and disorder, whilst the latter are performed on 1.8 MeV He implanted diamond samples to measure surface swelling. The effect of thermal processing on the evolution of the structural-mechanical properties of damaged diamond is also evaluated by performing the same profilometric measurements after annealing at 1000 °C, and modeling the obtained trends with a suitably modified analytical model. The results allow the development of a coherent model describing the effects of MeV-ion-induced damage on the structural-mechanical properties of single-crystal diamond. In particular, we suggest a more reliable method to determine the so-called diamond "graphitization threshold" for the considered implantation type.
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Submitted 25 August, 2016;
originally announced August 2016.
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Complex refractive index variation in proton-damaged diamond
Authors:
S. Lagomarsino,
P. Olivero,
S. Calusi,
D. Gatto Monticone,
L. Giuntini,
M. Massi,
S. Sciortino,
A. Sytchkova,
A. Sordini,
M. Vannoni
Abstract:
An accurate control of the optical properties of single crystal diamond during microfabrication processes such as ion implantation plays a crucial role in the engineering of integrated photonic devices. In this work we present a systematic study of the variation of both real and imaginary parts of the refractive index of single crystal diamond, when damaged with 2 and 3 MeV protons at low-medium f…
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An accurate control of the optical properties of single crystal diamond during microfabrication processes such as ion implantation plays a crucial role in the engineering of integrated photonic devices. In this work we present a systematic study of the variation of both real and imaginary parts of the refractive index of single crystal diamond, when damaged with 2 and 3 MeV protons at low-medium fluences (range: 10^15 - 10^17 cm^-2). After implanting in 125x125 um^2 areas with a scanning ion microbeam, the variation of optical pathlength of the implanted regions was measured with laser interferometric microscopy, while their optical transmission was studied using a spectrometric set-up with micrometric spatial resolution. On the basis of a model taking into account the strongly non-uniform damage profile in the bulk sample, the variation of the complex refractive index as a function of damage density was evaluated.
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Submitted 25 August, 2016;
originally announced August 2016.
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Micro-beam and pulsed laser beam techniques for the micro-fabrication of diamond surface and bulk structures
Authors:
S. Sciortino,
M. Bellini,
F. Bosia,
S. Calusi,
C. Corsi,
C. Czelusniak,
N. Gelli,
L. Giuntini,
F. Gorelli,
S. Lagomarsino,
P. A. Mando,
M. Massi,
P. Olivero,
G. Parrini,
M. Santoro,
A. Sordini,
A. Sytchkova,
F. Taccetti,
M. Vannoni
Abstract:
Micro-fabrication in diamond is involved in a wide set of emerging technologies, exploiting the exceptional characteristics of diamond for application in bio-physics, photonics, radiation detection. Micro ion-beam irradiation and pulsed laser irradiation are complementary techniques, which permit the implementation of complex geometries, by modification and functionalization of surface and/or bulk…
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Micro-fabrication in diamond is involved in a wide set of emerging technologies, exploiting the exceptional characteristics of diamond for application in bio-physics, photonics, radiation detection. Micro ion-beam irradiation and pulsed laser irradiation are complementary techniques, which permit the implementation of complex geometries, by modification and functionalization of surface and/or bulk material, modifying the optical, electrical and mechanical characteristics of the material. In this article we summarize the work done in Florence (Italy) concerning ion beam and pulsed laser beam micro-fabrication in diamond.
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Submitted 25 August, 2016;
originally announced August 2016.
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Systematic study of defect-related quenching of NV luminescence in diamond with time correlated single photon counting spectroscopy
Authors:
D. Gatto Monticone,
F. Quercioli,
R. Mercatelli,
S. Soria,
S. Borini,
T. Poli,
M. Vannoni,
E. Vittone,
P. Olivero
Abstract:
We report on the systematic characterization of photoluminescence (PL) lifetimes in NV- and NV0 centers in 2 MeV H+ implanted type Ib diamond samples by means of a time correlated single photon counting (TCSPC) microscopy technique. A dipole-dipole resonant energy transfer model was applied to interpret the experimental results, allowing a quantitative correlation of the concentration of both nati…
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We report on the systematic characterization of photoluminescence (PL) lifetimes in NV- and NV0 centers in 2 MeV H+ implanted type Ib diamond samples by means of a time correlated single photon counting (TCSPC) microscopy technique. A dipole-dipole resonant energy transfer model was applied to interpret the experimental results, allowing a quantitative correlation of the concentration of both native (single substitutional nitrogen atoms) and ion-induced (isolated vacancies) PL-quenching defects with the measured PL lifetimes. The TCSPC measurements were carried out in both frontal (i.e. laser beam probing the main sample surface along the same normal direction of the previously implanted ions) and lateral (i.e. laser beam probing the lateral sample surface orthogonally with respect to the same ion implantation direction) geometries. In particular, the latter geometry allowed a direct probing of the centers lifetime along the strongly nonuniform damage profiles of MeV ions in the crystal. The extrapolation of empirical quasi-exponential decay parameters allowed the systematic estimation of the mean quantum efficiency of the centers as a function of intrinsic and ion-induced defect concentration, which is of direct relevance for the current studies on the use of diamond color centers for photonic applications.
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Submitted 19 September, 2013;
originally announced September 2013.
