Showing 1–50 of 62 results for author: Van de Walle, C G

Optical lineshapes for orbital singlet to doublet transitions in a dynamical Jahn-Teller system: the NiV$^{-}$ center in diamond

Authors: Rokas Silkinis, Vytautas Žalandauskas, Gergő Thiering, Adam Gali, Chris G. Van de Walle, Audrius Alkauskas, Lukas Razinkovas

Abstract: We apply density functional theory to investigate interactions between electronic and vibrational states in crystal defects with multi-mode dynamical Jahn-Teller (JT) systems. Our focus is on transitions between orbital singlet and degenerate orbital doublet characterized by $E \otimes (e \oplus e \oplus \cdots)$ JT coupling, which frequently occurs in crystal defects that are investigated for app… ▽ More We apply density functional theory to investigate interactions between electronic and vibrational states in crystal defects with multi-mode dynamical Jahn-Teller (JT) systems. Our focus is on transitions between orbital singlet and degenerate orbital doublet characterized by $E \otimes (e \oplus e \oplus \cdots)$ JT coupling, which frequently occurs in crystal defects that are investigated for applications in quantum information science. We utilize a recently developed methodology to model the photoluminescence (PL) spectrum of the negatively charged split nickel-vacancy center (NiV$^{-}$) in diamond, where JT-active modes significantly influence electron-phonon interactions. Our results validate the effectiveness of the methodology in accurately reproducing the observed 1.4 eV PL lineshape. The strong agreement between our theoretical predictions and experimental observations reinforces the identification of the 1.4 eV PL center with the NiV$^{-}$ complex. This study highlights the critical role of JT-active modes in affecting optical lineshapes and demonstrates the power of advanced techniques for modeling optical properties in complex systems with multiple JT-active frequencies. △ Less

Submitted 1 July, 2024; v1 submitted 15 June, 2024; originally announced June 2024.

Comments: 13 pages, 7 figures

Unveiling the Pockels Coefficient of Ferroelectric Nitride ScAlN

Authors: Guangcanlan Yang, Haochen Wang, Sai Mu, Hao Xie, Tyler Wang, Chengxing He, Mohan Shen, Mengxia Liu, Chris G. Van de Walle, Hong X. Tang

Abstract: Nitride ferroelectrics have recently emerged as promising alternatives to oxide ferroelectrics due to their compatibility with mainstream semiconductor processing. ScAlN, in particular, has exhibited remarkable piezoelectric coupling strength ($K^2$) comparable to that of lithium niobate (LN), making it a valuable choice for RF filters in wireless communications. Recently, ScAlN has sparked intere… ▽ More Nitride ferroelectrics have recently emerged as promising alternatives to oxide ferroelectrics due to their compatibility with mainstream semiconductor processing. ScAlN, in particular, has exhibited remarkable piezoelectric coupling strength ($K^2$) comparable to that of lithium niobate (LN), making it a valuable choice for RF filters in wireless communications. Recently, ScAlN has sparked interest in its use for nanophotonic devices, chiefly due to its large bandgap facilitating operation in blue wavelengths coupled with promises of enhanced nonlinear optical properties such as a large second-order susceptibility ($χ^{(2)}$). It is still an open question whether ScAlN can outperform oxide ferroelectrics concerning the Pockels effect -- an electro-optic coupling extensively utilized in optical communications devices. In this paper, we present a comprehensive theoretical analysis and experimental demonstration of ScAlN's Pockels effect. Our findings reveal that the electro-optic coupling of ScAlN, despite being weak at low Sc concentration, may be significantly enhanced at high levels of Sc do**, which points the direction of continued research efforts to unlock the full potential of ScAlN. △ Less

Submitted 13 May, 2024; originally announced May 2024.

First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and CoSi$_2$(111)/Si(111) interfaces

Authors: J. K. Nangoi, C. J. Palmstrøm, C. G. Van de Walle

Abstract: We present first-principles calculations of Schottky barrier heights (SBHs) at interfaces relevant for silicon-based merged-element transmon qubit devices. Focusing on Al(111)/Si(111) and CoSi$_2$(111)/Si(111), we consider various possible interfacial structures, for which we study the relaxations of the atoms near the interface, calculate the formation energies and Schottky barrier heights, and p… ▽ More We present first-principles calculations of Schottky barrier heights (SBHs) at interfaces relevant for silicon-based merged-element transmon qubit devices. Focusing on Al(111)/Si(111) and CoSi$_2$(111)/Si(111), we consider various possible interfacial structures, for which we study the relaxations of the atoms near the interface, calculate the formation energies and Schottky barrier heights, and provide estimates of the Josephson critical currents based on the WKB tunneling formalism as implemented in the Simmons/Tsu-Esaki model. We find that the formation energies and SBHs are very similar for all Al(111)/Si(111) structures, yet vary significantly for the CoSi$_2$(111)/Si(111) structures. We attribute this to the more covalent character of bonding at CoSi$_2$/Si, which leads to configurations with distinct atomic and electronic structure. Our estimated Josephson critical currents, which govern the behavior of merged-element transmons, provide insight into the trends as a function of Schottky-barrier height. We show that desirable qubit frequencies of 4-5 GHz can be obtained with a Si barrier thickness of about 5-10 nm, and demonstrate that the critical current density as a function of Schottky barrier height can be modeled based on the tunneling probability for a rectangular barrier. △ Less

Submitted 20 March, 2024; originally announced March 2024.

Comments: Submitted to Physical Review B

Journal ref: Phys. Rev. B 110, 035302 (2024)

Carrier confinement and alloy disorder exacerbate Auger-Meitner recombination in AlGaN ultraviolet light-emitting diodes

Authors: Nick Pant, Kyle Bushick, Andrew McAllister, Woncheol Lee, Chris G. Van de Walle, Emmanouil Kioupakis

Abstract: The quantum efficiency of AlGaN ultraviolet light-emitting diodes (LEDs) declines (droops) at increasing operating powers due to Auger-Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR mediated by electron-phonon coupling and alloy disorder can induce bulk $C$ coefficients as large as $\sim10^{-31}$ cm$^6$/s. Furthermore, we find that the conf… ▽ More The quantum efficiency of AlGaN ultraviolet light-emitting diodes (LEDs) declines (droops) at increasing operating powers due to Auger-Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR mediated by electron-phonon coupling and alloy disorder can induce bulk $C$ coefficients as large as $\sim10^{-31}$ cm$^6$/s. Furthermore, we find that the confinement of carriers by polarization fields within quantum wells severely relaxes crystal-momentum conservation, which exacerbates the rate of AMR over radiative recombination by an order of magnitude relative to the bulk. This results in a striking decrease in quantum efficiency at high power. Suppressing polarization fields and jointly increasing the well width would greatly mitigate AMR and efficiency droop. △ Less

Submitted 16 March, 2024; originally announced March 2024.

Dielectric Loss due to Charged-Defect Acoustic Phonon Emission

Authors: Mark E. Turiansky, Chris G. Van de Walle

Abstract: The coherence times of state-of-the-art superconducting qubits are limited by bulk dielectric loss, yet the microscopic mechanism leading to this loss is unclear. Here we propose that the experimentally observed loss can be attributed to the presence of charged defects that enable the absorption of electromagnetic radiation by the emission of acoustic phonons. Our explicit derivation of the absorp… ▽ More The coherence times of state-of-the-art superconducting qubits are limited by bulk dielectric loss, yet the microscopic mechanism leading to this loss is unclear. Here we propose that the experimentally observed loss can be attributed to the presence of charged defects that enable the absorption of electromagnetic radiation by the emission of acoustic phonons. Our explicit derivation of the absorption coefficient for this mechanism allows us to derive a loss tangent of $7.2 \times 10^{-9}$ for Al$_2$O$_3$, in good agreement with recent high-precision measurements [A. P. Read et al., Phys. Rev. Appl. 19, 034064 (2023)]. We also find that for temperatures well below ~0.2 K, the loss should be independent of temperature, also in agreement with observations. Our investigations show that the loss per defect depends mainly on properties of the host material, and a high-throughput search suggests that diamond, cubic BN, AlN, and SiC are optimal in this respect. △ Less

Submitted 27 February, 2024; originally announced February 2024.

Rational Design of Efficient Defect-Based Quantum Emitters

Authors: Mark E. Turiansky, Kamyar Parto, Galan Moody, Chris G. Van de Walle

Abstract: Single-photon emitters are an essential component of quantum networks, and defects or impurities in semiconductors are a promising platform to realize such quantum emitters. Here we present a model that encapsulates the essential physics of coupling to phonons, which governs the behavior of real single-photon emitters, and critically evaluate several approximations that are commonly utilized. Emis… ▽ More Single-photon emitters are an essential component of quantum networks, and defects or impurities in semiconductors are a promising platform to realize such quantum emitters. Here we present a model that encapsulates the essential physics of coupling to phonons, which governs the behavior of real single-photon emitters, and critically evaluate several approximations that are commonly utilized. Emission in the telecom wavelength range is highly desirable, but our model shows that nonradiative processes are greatly enhanced at these low photon energies, leading to a decrease in efficiency. Our results suggest that reducing the phonon frequency is a fruitful avenue to enhance the efficiency. △ Less

Submitted 13 February, 2024; originally announced February 2024.

A first-principles approach to closing the "10-100 eV gap" for charge-carrier thermalization in semiconductors

Authors: Dallin O. Nielsen, Chris G. Van de Walle, Sokrates T. Pantelides, Ronald D. Schrimpf, Daniel M. Fleetwood, Massimo V. Fischetti

Abstract: The present work is concerned with studying accurately the energy-loss processes that control the thermalization of hot electrons and holes that are generated by high-energy radiation in wurtzite GaN, using an ab initio approach. Current physical models of the nuclear/particle physics community cover thermalization in the high-energy range (kinetic energies exceeding ~100 eV), and the electronic-d… ▽ More The present work is concerned with studying accurately the energy-loss processes that control the thermalization of hot electrons and holes that are generated by high-energy radiation in wurtzite GaN, using an ab initio approach. Current physical models of the nuclear/particle physics community cover thermalization in the high-energy range (kinetic energies exceeding ~100 eV), and the electronic-device community has studied extensively carrier transport in the low-energy range (below ~10 eV). However, the processes that control the energy losses and thermalization of electrons and holes in the intermediate energy range of about 10-100 eV (the "10-100 eV gap") are poorly known. The aim of this research is to close this gap, by utilizing density functional theory (DFT) to obtain the band structure and dielectric function of GaN for energies up to about 100 eV. We also calculate charge-carrier scattering rates for the major charge-carrier interactions (phonon scattering, impact ionization, and plasmon emission), using the DFT results and first-order perturbation theory. With this information, we study the thermalization of electrons starting at 100 eV using the Monte Carlo method to solve the semiclassical Boltzmann transport equation. Full thermalization of electrons and holes is complete within ~1 and 0.5 ps, respectively. Hot electrons dissipate about 90% of their initial kinetic energy to the electron-hole gas (90 eV) during the first ~0.1 fs, due to rapid plasmon emission and impact ionization at high energies. The remaining energy is lost more slowly as phonon emission dominates at lower energies (below ~10 eV). During the thermalization, hot electrons generate pairs with an average energy of ~8.9 eV/pair (11-12 pairs per hot electron). Additionally, during the thermalization, the maximum electron displacement from its original position is found to be on the order of 100 nm. △ Less

Submitted 7 August, 2023; originally announced August 2023.

Comments: 23 pages, 20 figures. This LaTex file uses RevTex4.2 from APS

Trap-Assisted Auger-Meitner Recombination from First Principles

Authors: Fangzhou Zhao, Mark E. Turiansky, Audrius Alkauskas, Chris G. Van de Walle

Abstract: Trap-assisted nonradiative recombination is known to limit the efficiency of optoelectronic devices, but the conventional multi-phonon emission (MPE) process fails to explain the observed loss in wide-band-gap materials. Here we highlight the role of trap-assisted Auger-Meitner (TAAM) recombination, and present a first-principles methodology to determine TAAM rates due to defects or impurities in… ▽ More Trap-assisted nonradiative recombination is known to limit the efficiency of optoelectronic devices, but the conventional multi-phonon emission (MPE) process fails to explain the observed loss in wide-band-gap materials. Here we highlight the role of trap-assisted Auger-Meitner (TAAM) recombination, and present a first-principles methodology to determine TAAM rates due to defects or impurities in semiconductors or insulators. We assess the impact on efficiency of light emitters in a recombination cycle that may include both TAAM and carrier capture via MPE. We apply the formalism to the technologically relevant case study of a calcium impurity in InGaN, where a Shockley-Read-Hall recombination cycle involving MPE alone cannot explain the experimentally observed nonradiative loss. We find that, for band gaps larger than 2.5 eV, the inclusion of TAAM results in recombination rates that are orders of magnitude larger than recombination rates based on MPE alone, demonstrating that TAAM can be a dominant nonradiative process in wide-band-gap materials. Our computational formalism is general and can be applied to the calculation of TAAM rates in any semiconducting or insulating material. △ Less

Submitted 15 November, 2022; originally announced November 2022.

Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN$_2$ and MgSiN$_2$

Authors: Joshua Leveillee, Samuel Ponce, Nicholas L. Adamski, Chris G. Van de Walle, Feliciano Giustino

Abstract: The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via epitaxial matching to II-IV nitride materials that have recently become available, namely ZnGeN$_2$ and MgSiN$_2$. We perform state-of-the-art calculations of the hole mobility of GaN using the ab initio Boltzmann transp… ▽ More The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via epitaxial matching to II-IV nitride materials that have recently become available, namely ZnGeN$_2$ and MgSiN$_2$. We perform state-of-the-art calculations of the hole mobility of GaN using the ab initio Boltzmann transport equation. We show that effective uniaxial compressive strain of GaN along the $[1\bar{1}00]$ by lattice matching to ZnGeN$_2$ and MgSiN$_2$ results in the inversion of the heavy hole band and split-off hole band, thereby lowering the effective hole mass in the compression direction. We find that lattice matching to ZnGeN$_2$ and MgSiN$_2$ induces an increase of the room-temperature hole mobility by 50% and 260% as compared to unstrained GaN, respectively. Examining the trends as a function of strain, we find that the variation in mobility is highly nonlinear; lattice matching to a hypothetical solid solution of Zn$_{0.75}$Ge$_{0.75}$Mg$_{0.25}$Si$_{0.25}$N$_2$ would already increase the hole mobility by 160%. △ Less

Submitted 12 May, 2022; originally announced May 2022.

Probing the Optical Dynamics of Quantum Emitters in Hexagonal Boron Nitride

Authors: Raj N. Patel, David A. Hopper, Jordan A. Gusdorff, Mark E. Turiansky, Tzu-Yung Huang, Rebecca E. K. Fishman, Benjamin Porat, Chris G. Van de Walle, Lee C. Bassett

Abstract: Hexagonal boron nitride is a van der Waals material that hosts visible-wavelength quantum emitters at room temperature. However, experimental identification of the quantum emitters' electronic structure is lacking, and key details of their charge and spin properties remain unknown. Here, we probe the optical dynamics of quantum emitters in hexagonal boron nitride using photon emission correlation… ▽ More Hexagonal boron nitride is a van der Waals material that hosts visible-wavelength quantum emitters at room temperature. However, experimental identification of the quantum emitters' electronic structure is lacking, and key details of their charge and spin properties remain unknown. Here, we probe the optical dynamics of quantum emitters in hexagonal boron nitride using photon emission correlation spectroscopy. Several quantum emitters exhibit ideal single-photon emission with noise-limited photon antibunching, $g^{(2)}(0)=0$. The photoluminescence emission lineshapes are consistent with individual vibronic transitions. However, polarization-resolved excitation and emission suggests the role of multiple optical transitions, and photon emission correlation spectroscopy reveals complicated optical dynamics associated with excitation and relaxation through multiple electronic excited states. We compare the experimental results to quantitative optical dynamics simulations, develop electronic structure models that are consistent with the observations, and discuss the results in the context of ab initio theoretical calculations. △ Less

Submitted 21 January, 2022; originally announced January 2022.

Comments: 31 pages, 16 figures, 6 tables

Journal ref: PRX Quantum 3, 030331 (2022)

Role of carbon and hydrogen in limiting $n$-type do** of monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$

Authors: Sai Mu, Mengen Wang, Joel B. Varley, John L. Lyons, Darshana Wickramaratne, Chris G. Van de Walle

Abstract: We use hybrid density functional calculations to assess n-type do** in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and charge-state transition levels of its various configurations. We also explore the impact of C and H, which are common impurities in metal-organic chemical vapor deposition… ▽ More We use hybrid density functional calculations to assess n-type do** in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and charge-state transition levels of its various configurations. We also explore the impact of C and H, which are common impurities in metal-organic chemical vapor deposition (MOCVD). In Ga$_2$O$_3$, Si$_{Ga}$ is an effective shallow donor, but in Al$_2O_3$ Si$_{Al}$ acts as a DX center with a (+/-) transition level in the band gap. Interstitial H acts as a shallow donor in Ga$_2$O$_3$, but behaves as a compensating acceptor in n-type Al$_2O_3$. Interpolation indicates that Si is an effective donor in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ up to 70% Al, but it can be compensated by H already at 1% Al. We also assess the diffusivity of H and study complex formation. Si$_{cation}$-H complexes have relatively low binding energies. Substitutional C on a cation site acts as a shallow donor in Ga$_2$O$_3$, but can be stable in a negative charge state in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ when x>5%. Substitutional C on an O site (C$_O$) always acts as an acceptor in n-type (Al$_x$Ga$_{1-x}$)$_2$O$_3$, but will incorporate only under relatively O-poor conditions. C$_O$-H complexes can actually incorporate more easily, explaining observations of C-related compensation in Ga$_2$O$_3$ grown by MOCVD. We also investigate C$_{cation}$-H complexes, finding they have high binding energies and act as compensating acceptors when x>56%; otherwise the H just passivates the unintentional C donors. C-H complex formation explains why MOCVD grown Ga$_2$O$_3$ can exhibit record-low free-carrier concentrations, in spite of the unavoidable incorporation of C. Our study highlights that, while Si is a suitable shallow donor in ALGO alloys, control of unintentional impurities is essential to avoid compensation. △ Less

Submitted 23 January, 2022; v1 submitted 13 November, 2021; originally announced November 2021.

Comments: 17 pages, 13 figures

Journal ref: Physical Review B 105, 155201(2022)

Piezoelectric effect and polarization switching in Al$_{1-x}$Sc$_x$N

Authors: Haochen Wang, Nicholas Adamski, Sai Mu, Chris G. Van de Walle

Abstract: Aluminum nitride is piezoelectric and exhibits spontaneous polarization along the $c$-axis, but the polarization cannot be switched by applying an electric field. Adding Sc to AlN enhances the piezoelectric properties, and can make the alloy ferroelectric. We perform a detailed first-principles analysis of spontaneous and piezoelectric polarization. Comparisons between explicit supercell calculati… ▽ More Aluminum nitride is piezoelectric and exhibits spontaneous polarization along the $c$-axis, but the polarization cannot be switched by applying an electric field. Adding Sc to AlN enhances the piezoelectric properties, and can make the alloy ferroelectric. We perform a detailed first-principles analysis of spontaneous and piezoelectric polarization. Comparisons between explicit supercell calculations show that the virtual crystal approximation produces accurate results for polarization, but falls short in describing the phase stability of the alloy. We relate the behavior of the piezoelectric constant $e_{33}$ to the microscopic behavior of the internal displacement parameter $u$, finding that the internal strain contribution dominates in the Sc-induced enhancement. The value of $u$ increases with scandium concentration, bringing the alloy locally closer to a layered hexagonal structure. Our approach allows us to calculate the ferroelectric switching barrier, which we analyze as a function of Sc concentration and temperature based on Ginzburg-Landau theory. △ Less

Submitted 15 May, 2021; originally announced May 2021.

Comments: 7 pages, 6 figures

Journal ref: Journal of Applied Physics 130, 104101 (2021)

First-principles study of electron transport in ScN

Authors: Sai Mu, Andrew J. E. Rowberg, Joshua Leveillee, Feliciano Giustino, Chris G. Van de Walle

Abstract: We investigate the conduction-band structure and electron mobility in rocksalt ScN based on density functional theory. The first-principles band structure allows us to obtain band velocities and effective masses as a function of energy. Electron-phonon scattering is assessed by explicitly computing the $q$-dependent electron-phonon matrix elements, with the inclusion of the long-range electrostati… ▽ More We investigate the conduction-band structure and electron mobility in rocksalt ScN based on density functional theory. The first-principles band structure allows us to obtain band velocities and effective masses as a function of energy. Electron-phonon scattering is assessed by explicitly computing the $q$-dependent electron-phonon matrix elements, with the inclusion of the long-range electrostatic interaction. The influence of free-carrier screening on the electron transport is assessed using the random phase approximation. We find a notable enhancement of electron mobility when the carrier concentration exceeds 10$^{20}$ cm$^{-3}$. We calculate the room-temperature electron mobility in ScN to be 587 cm$^2$/Vs at low carrier concentrations. When the carrier concentration is increased, the electron mobility starts to decrease significantly around $n=10^{19}$ cm$^{-3}$, and drops to 240 cm$^2$/Vs at $n=10^{21}$ cm$^{-3}$. We also explore the influence of strain in (111)- and (100)-oriented ScN films. For (111) films, we find that a 1.0\% compressive epitaxial strain increases the in-plane mobility by 72 cm$^2$/Vs and the out-of-plane mobility by 50 cm$^2$/Vs. For (100) films, a 1.0\% compressive epitaxial strain increases the out-of-plane mobility by as much as 172 cm$^2$/Vs, but has a weak impact on the in-plane mobility. Our study sheds light on electron transport in ScN at different electron concentrations and shows how strain engineering could increase the electron mobility. △ Less

Submitted 15 May, 2021; originally announced May 2021.

Comments: 12 pages, 11 figures

Journal ref: Phys. Rev. B 104, 075118 (2021)

Hydride Conductivity in Nitride Hydrides

Authors: Andrew J. E. Rowberg, Chris G. Van de Walle

Abstract: Nitride hydrides are a largely unexplored class of materials with promising applications in solid-state hydrogen fuel cells. Here, we use first-principles calculations to characterize defects and ionic mobility in Sr$_2$LiH$_2$N (SLHN), a nitride hydride with high hydride conductivity. Calculating defect formation energies, we find that SLHN contains high concentrations of hydrogen interstitials (… ▽ More Nitride hydrides are a largely unexplored class of materials with promising applications in solid-state hydrogen fuel cells. Here, we use first-principles calculations to characterize defects and ionic mobility in Sr$_2$LiH$_2$N (SLHN), a nitride hydride with high hydride conductivity. Calculating defect formation energies, we find that SLHN contains high concentrations of hydrogen interstitials (H$_i$). H$_i^-$ migrates with very low energetic barriers, which, together with its low formation energy, implies that SLHN will have excellent hydride kinetics, potentially surpassing those of other known hydride electrolytes. Oxygen contamination is a concern, meaning that encapsulation will be critical. By direct analogy to the La/Sr-based oxyhydrides, which have similar crystal structures, we also investigate the La-based nitride hydride La$_2$LiHN$_2$ but find that it will be significantly less conductive, and thus not as technologically useful. Our findings buttress the exploration of SLHN and similar nitride hydrides for use in solid-state hydrogen fuel cells. △ Less

Submitted 10 May, 2021; originally announced May 2021.

Comments: 13 pages, 6 figures

Understanding Carbon Contamination in Proton Conducting Oxides

Authors: Andrew J. E. Rowberg, Michael W. Swift, Chris G. Van de Walle

Abstract: Carbon contamination is a significant concern for proton-conducting oxides in the cerate and zirconate family, particularly for BaCeO$_3$. Here, we use first-principles calculations to evaluate carbon stability in SrCeO$_3$, BaCeO$_3$, SrZrO$_3$, and BaZrO$_3$. The cerates require more carbon-poor environments to prevent carbonate formation, though this requirement can be loosened through the use… ▽ More Carbon contamination is a significant concern for proton-conducting oxides in the cerate and zirconate family, particularly for BaCeO$_3$. Here, we use first-principles calculations to evaluate carbon stability in SrCeO$_3$, BaCeO$_3$, SrZrO$_3$, and BaZrO$_3$. The cerates require more carbon-poor environments to prevent carbonate formation, though this requirement can be loosened through the use of more oxygen-poor growth conditions. Carbonate formation is not the only concern, however. We find that interstitial carbon has lower formation energies in the cerates relative to the zirconates, leading to higher carbon concentrations that compete with the desired oxygen vacancy formation. We also examine the mobility of carbon interstitials, finding that both migration barriers and binding energies to acceptors are lower in the cerates. As a result, the cerates are likely to degrade when exposed to carbon at operating temperatures. Our results show definitively why the cerates are less stable than the zirconates with respect to carbon and elucidate the mechanisms contributing to their instability, thereby hel** to explain why alloying with zirconium will enhance their operational efficiency. △ Less

Submitted 10 May, 2021; originally announced May 2021.

Comments: 11 pages, 3 figures. Supporting Information: 5 pages, 2 figures

Vibrational and vibronic structure of isolated point defects: the nitrogen-vacancy center in diamond

Authors: Lukas Razinkovas, Marcus W. Doherty, Neil B. Manson, Chris G. Van de Walle, Audrius Alkauskas

Abstract: We present a theoretical study of vibrational and vibronic properties of a point defect in the dilute limit by means of first-principles density functional theory calculations. As an exemplar we choose the negatively charged nitrogen-vacancy center, a solid-state system that has served as a testbed for many protocols of quantum technology. We achieve low effective concentrations of defects by cons… ▽ More We present a theoretical study of vibrational and vibronic properties of a point defect in the dilute limit by means of first-principles density functional theory calculations. As an exemplar we choose the negatively charged nitrogen-vacancy center, a solid-state system that has served as a testbed for many protocols of quantum technology. We achieve low effective concentrations of defects by constructing dynamical matrices of large supercells containing tens of thousands of atoms. The main goal of the paper is to calculate luminescence and absorption lineshapes due to coupling to vibrational degrees of freedom. The coupling to symmetric $a_1$ modes is computed via the Huang-Rhys theory. Importantly, to include a nontrivial contribution of $e$ modes we develop an effective methodology to solve the multi-mode $E \otimes e$ Jahn-Teller problem. Our results show that for NV centers in diamond a proper treatment of $e$ modes is particularly important for absorption. We obtain good agreement with experiment for both luminescence and absorption. Finally, the remaining shortcomings of the theoretical approach are critically reviewed. The presented theoretical approach will benefit identification and future studies of point defects in solids. △ Less

Submitted 6 August, 2021; v1 submitted 8 December, 2020; originally announced December 2020.

Comments: 21 pages, 17 figures

Journal ref: Phys. Rev. B 104, 045303 (2021)

Nonrad: Computing Nonradiative Capture Coefficients from First Principles

Authors: Mark E. Turiansky, Audrius Alkauskas, Manuel Engel, Georg Kresse, Darshana Wickramaratne, Jimmy-Xuan Shen, Cyrus E. Dreyer, Chris G. Van de Walle

Abstract: Point defects in semiconductor crystals provide a means for carriers to recombine nonradiatively. This recombination process impacts the performance of devices. We present the Nonrad code that implements the first-principles approach of Alkauskas et al. [Phys. Rev. B 90, 075202 (2014)] for the evaluation of nonradiative capture coefficients based on a quantum-mechanical description of the capture… ▽ More Point defects in semiconductor crystals provide a means for carriers to recombine nonradiatively. This recombination process impacts the performance of devices. We present the Nonrad code that implements the first-principles approach of Alkauskas et al. [Phys. Rev. B 90, 075202 (2014)] for the evaluation of nonradiative capture coefficients based on a quantum-mechanical description of the capture process. An approach for evaluating electron-phonon coupling within the projector augmented wave formalism is presented. We also show that the common procedure of replacing Dirac delta functions with Gaussians can introduce errors into the resulting capture rate, and implement an alternative scheme to properly account for vibrational broadening. Lastly, we assess the accuracy of using an analytic approximation to the Sommerfeld parameter by comparing with direct numerical evaluation. △ Less

Submitted 22 November, 2020; v1 submitted 14 November, 2020; originally announced November 2020.

Radiative capture rates at deep defects from electronic structure calculations

Authors: Cyrus E. Dreyer, Audrius Alkauskas, John L. Lyons, Chris G. Van de Walle

Abstract: We present a methodology to calculate radiative carrier capture coefficients at deep defects in semiconductors and insulators from first principles. Electronic structure and lattice relaxations are accurately described with hybrid density functional theory. Calculations of capture coefficients provide an additional validation of the accuracy of these functionals in dealing with localized defect st… ▽ More We present a methodology to calculate radiative carrier capture coefficients at deep defects in semiconductors and insulators from first principles. Electronic structure and lattice relaxations are accurately described with hybrid density functional theory. Calculations of capture coefficients provide an additional validation of the accuracy of these functionals in dealing with localized defect states. We also discuss the validity of the Condon approximation, showing that even in the event of large lattice relaxations the approximation is accurate. We test the method on GaAs:$V_\text{Ga}$-$\text{Te}_\text{As}$ and GaN:C$_\text{N}$, for which reliable experiments are available, and demonstrate very good agreement with measured capture coefficients. △ Less

Submitted 6 August, 2020; originally announced August 2020.

Comments: 6 pages, 2 figures

Electronic structure and magneto-optical properties of silicon-nitrogen-vacancy complexes in diamond

Authors: Marcin Roland Zemła, Kamil Czelej, Paulina Kamińska, Chris G. Van de Walle, Jacek A. Majewski

Abstract: The silicon-vacancy (SiV) and nitrogen-vacancy (NV) centers in diamond are commonly regarded as prototypical defects for solid-state quantum information processing. Here we show that when silicon and nitrogen are simultaneously introduced into the diamond lattice these defects can strongly interact and form larger complexes. Nitrogen atoms strongly bind to Si and SiV centers and complex formation… ▽ More The silicon-vacancy (SiV) and nitrogen-vacancy (NV) centers in diamond are commonly regarded as prototypical defects for solid-state quantum information processing. Here we show that when silicon and nitrogen are simultaneously introduced into the diamond lattice these defects can strongly interact and form larger complexes. Nitrogen atoms strongly bind to Si and SiV centers and complex formation can occur. Using a combination of hybrid density functional theory (DFT) and group theory, we analyze the electronic structure and provide various useful physical properties, such as hyperfine structure, quasi-local vibrational modes, and zero-phonon line, to enable experimental identification of these complexes. We demonstrate that the presence of substitutional silicon adjacent to nitrogen significantly shifts the donor level toward the conduction band, resulting in an activation energy for the SiN center that is comparable to phosphorus. We also find that the neutral SiNV center is of particular interest due to its photon emission at $\sim$1530 nm, which falls within the C band of telecom wavelengths, and its paramagnetic nature. In addition, the optical transition associated with the SiNV$^0$ color center exhibits very small electron--phonon coupling (Huang--Rhys factor~=~0.78) resulting in high quantum efficiency (Debye-Waller factor = 46\%) for single-photon emission. These features render this new center very attractive for potential application in scalable quantum telecommunication networks. △ Less

Submitted 21 June, 2020; originally announced June 2020.

Comments: 12 pages, 9 figures, 2 tables

Journal ref: Phys. Rev. B 102, 115102 (2020)

Giant polarization charge density at lattice-matched GaN/ScN interfaces

Authors: Nicholas L. Adamski, Cyrus E. Dreyer, Chris G. Van de Walle

Abstract: Rocksalt ScN is a semiconductor with a small lattice mismatch to wurtzite GaN. Within the modern theory of polarization, ScN has a nonvanishing formal polarization along the [111] direction. As a result, we demonstrate that an interface between (0001) GaN and (111) ScN exihibts a large polarization discontinuity of $-$1.358 $\rm Cm^{-2}$. Interfaces between ScN and wurtzite III-nitrides will exhib… ▽ More Rocksalt ScN is a semiconductor with a small lattice mismatch to wurtzite GaN. Within the modern theory of polarization, ScN has a nonvanishing formal polarization along the [111] direction. As a result, we demonstrate that an interface between (0001) GaN and (111) ScN exihibts a large polarization discontinuity of $-$1.358 $\rm Cm^{-2}$. Interfaces between ScN and wurtzite III-nitrides will exhibit a high-density electron gas on the (000$\bar{1}$) GaN interface or a hole gas on the (0001) GaN interface, with carrier concentrations up to $8.5 \times 10^{14}$ cm$^{-2}$. The large polarization difference and small strain makes ScN a desirable choice for polarization-enhanced tunnel junctions within the III-nitride materials system. The large sheet carrier densities may also be useful for contacts or current spreading layers. △ Less

Submitted 19 December, 2019; v1 submitted 30 September, 2019; originally announced October 2019.

Comments: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters {\bf 115}, 232103 (2019) and may be found at https://aip.scitation.org/doi/10.1063/1.5126717

Journal ref: Appl. Phys. Lett. 115, 232103 (2019)

Limitations of In$_2$O$_3$ as a transparent conducting oxide

Authors: H. Peelaers, E. Kioupakis, C. G. Van de Walle

Abstract: Sn-doped In$_2$O$_3$ or ITO is the most widely used transparent conducting oxide. We use first-principles calculations to investigate the limitations to its transparency due to free-carrier absorption mediated by phonons or charged defects. We find that the main contribution to the phonon-assisted indirect absorption is due to emission (as opposed to absorption) of phonons, which explains why the… ▽ More Sn-doped In$_2$O$_3$ or ITO is the most widely used transparent conducting oxide. We use first-principles calculations to investigate the limitations to its transparency due to free-carrier absorption mediated by phonons or charged defects. We find that the main contribution to the phonon-assisted indirect absorption is due to emission (as opposed to absorption) of phonons, which explains why the process is relatively insensitive to temperature. The wavelength dependence of this indirect absorption process can be described by a power law. Indirect absorption mediated by charged defects or impurities is also unavoidable since do** is required to obtain conductivity. At high carrier concentrations, screening by the free carriers becomes important. We find that charged-impurity-assisted absorption becomes larger than phonon-assisted absorption for impurity concentrations above 10$^{20}$ cm$^{-3}$. The differences in the photon-energy dependence of the two processes can be explained by band-structure effects. △ Less

Submitted 31 July, 2019; originally announced July 2019.

Comments: 5+3 pages, 4+2 figures

Journal ref: Appl. Phys. Lett. 115, 082105 (2019)

Carbon dimer defect as a source of the 4.1 eV luminescence in hexagonal boron nitride

Authors: Mazena Mackoit-Sinkeviciene, Marek Maciaszek, Chris G. Van de Walle, Audrius Alkauskas

Abstract: We propose that the carbon dimer defect in hexagonal boron nitride gives rise to the ubiquitous narrow luminescence band with a zero-phonon line of 4.08 eV (usually labeled the 4.1 eV band). Our first-principles calculations are based on hybrid density functionals that provide a reliable description of wide band-gap materials. The calculated zero-phonon line energy of 4.3 eV is close to the experi… ▽ More We propose that the carbon dimer defect in hexagonal boron nitride gives rise to the ubiquitous narrow luminescence band with a zero-phonon line of 4.08 eV (usually labeled the 4.1 eV band). Our first-principles calculations are based on hybrid density functionals that provide a reliable description of wide band-gap materials. The calculated zero-phonon line energy of 4.3 eV is close to the experimental value, and the deduced Huang-Rhys factor of ${S \approx 2.0}$, indicating modest electron-phonon coupling, falls within the experimental range. The optical transition occurs between two localized $π$-type defects states, with a very short radiative lifetime of 1.2 nanoseconds, in very good accord with experiments. △ Less

Submitted 25 November, 2019; v1 submitted 4 July, 2019; originally announced July 2019.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 115, 212101 (2019)

Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3

Authors: Jared M. Johnson, Zhen Chen, Joel B. Varley, Christine M. Jackson, Esmat Farzana, Zeng Zhang, Aaron R. Arehart, Hsien-Lien Huang, Arda Genc, Steven A. Ringel, Chris G. Van de Walle, David A. Muller, **woo Hwang

Abstract: Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of an unusual formation of point defect complexes within the atomic scale structure of beta-Ga2O3 using high resolution scanning transmission electron mi… ▽ More Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of an unusual formation of point defect complexes within the atomic scale structure of beta-Ga2O3 using high resolution scanning transmission electron microscopy (STEM). Each complex involves one cation interstitial atom paired with two cation vacancies. These divacancy - interstitial complexes correlate directly with structures obtained by density functional theory, which predicts them to be compensating acceptors in beta-Ga2O3. This prediction is confirmed by a comparison between STEM data and deep level optical spectroscopy results, which reveals that these complexes correspond to a deep trap within the band gap, and that the development of the complexes is facilitated by Sn do** through the increase in vacancy concentration. These findings provide new insight on this emerging material's unique response to the incorporation of impurities that can critically influence their properties. △ Less

Submitted 1 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. X 9, 041027 (2019)

Defect identification based on first-principles calculations for deep level transient spectroscopy

Authors: Darshana Wickramaratne, Cyrus E. Dreyer, Bartomeu Monserrat, Jimmy-Xuan Shen, John L. Lyons, Audrius Alkauskas, Chris G. Van de Walle

Abstract: Deep level transient spectroscopy (DLTS) is used extensively to study defects in semiconductors. We demonstrate that great care should be exercised in interpreting activation energies extracted from DLTS as ionization energies. We show how first-principles calculations of thermodynamic transition levels, temperature effects of ionization energies, and nonradiative capture coefficients can be used… ▽ More Deep level transient spectroscopy (DLTS) is used extensively to study defects in semiconductors. We demonstrate that great care should be exercised in interpreting activation energies extracted from DLTS as ionization energies. We show how first-principles calculations of thermodynamic transition levels, temperature effects of ionization energies, and nonradiative capture coefficients can be used to accurately determine actual activation energies that can be directly compared with DLTS. Our analysis is illustrated with hybrid functional calculations for two important defects in GaN that have similar thermodynamic transition levels, and shows that the activation energy extracted from DLTS includes a capture barrier that is temperature dependent, unique to each defect, and in some cases large in comparison to the ionization energy. By calculating quantities that can be directly compared with experiment, first-principles calculations thus offer powerful leverage in identifying the microscopic origin of defects detected in DLTS. △ Less

Submitted 11 October, 2018; originally announced October 2018.

Comments: Main text and Supplementary Material

Electron do** in $\text{Sr}_3\text{Ir}_2\text{O}_7$: collapse of band gap and magnetic order

Authors: Michael W. Swift, Zach Porter, Stephen D. Wilson, Chris G. Van de Walle

Abstract: The electron-do**-driven collapse of the charge gap and staggered magnetization of the spin-orbit-assisted Mott insulator Sr$_{3}$Ir$_{2}$O$_{7}$ is explored via first-principles computational methods. In the antiferromagnetic phase, the gap and magnetization are observed to decrease slowly with increasing do**, with an abrupt collapse of both the gap and the magnetization at an electron conce… ▽ More The electron-do**-driven collapse of the charge gap and staggered magnetization of the spin-orbit-assisted Mott insulator Sr$_{3}$Ir$_{2}$O$_{7}$ is explored via first-principles computational methods. In the antiferromagnetic phase, the gap and magnetization are observed to decrease slowly with increasing do**, with an abrupt collapse of both the gap and the magnetization at an electron concentration corresponding to 4.8\% substitution of Sr with La, in excellent agreement with experiment. Additionally, we describe the structural effects of electron do** in Sr$_{3}$Ir$_{2}$O$_{7}$ via a competition between the steric effect from smaller La atoms substituted within the lattice and the dominant do**-driven deformation-potential effect. Curiously, our first-principles calculations fail to capture the low-temperature structural distortion reported in the low-gap phase of Sr$_{3}$Ir$_{2}$O$_{7}$, supporting the notion that this distortion arises as a secondary manifestation of an unconventional electronic order parameter in this material. △ Less

Submitted 31 July, 2018; v1 submitted 11 November, 2017; originally announced November 2017.

Comments: 6 pages, 4 figures, PRB Rapid Communication (accepted version)

Journal ref: Phys. Rev. B 98, 081106 (2018)

Linear hyperfine tuning of donor spins in silicon using hydrostatic strain

Authors: John Mansir, Pierandrea Conti, Zai** Zeng, Jarryd J. Pla, Patrice Bertet, Michael W. Swift, Chris G. Van de Walle, Mike L. W. Thewalt, Benoit Sklenard, Yann-Michel Niquet, John J. L. Morton

Abstract: We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding… ▽ More We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semi-quantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150~GHz per strain, for Bi-donors in Si), offers a method for donor spin tuning --- shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order $10^{-6}$ --- as well as opportunities for coupling to mechanical resonators. △ Less

Submitted 23 March, 2018; v1 submitted 2 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. Lett. 120, 167701 (2018)

Conditions for $T^2$ resistivity from electron-electron scattering

Authors: Michael Swift, Chris G. Van de Walle

Abstract: Many complex oxides (including titanates, nickelates and cuprates) show a regime in which resistivity follows a power law in temperature ($ρ\propto T^2$). By analogy to a similar phenomenon observed in some metals at low temperature, this has often been attributed to electron-electron (Baber) scattering. We show that Baber scattering results in a $T^2$ power law only under several crucial assumpti… ▽ More Many complex oxides (including titanates, nickelates and cuprates) show a regime in which resistivity follows a power law in temperature ($ρ\propto T^2$). By analogy to a similar phenomenon observed in some metals at low temperature, this has often been attributed to electron-electron (Baber) scattering. We show that Baber scattering results in a $T^2$ power law only under several crucial assumptions which may not hold for complex oxides. We illustrate this with sodium metal ($ρ_\text{el-el}\propto T^2$) and strontium titanate ($ρ_\text{el-el}\not\propto T^2$). We conclude that an observation of $ρ\propto T^2$ is not sufficient evidence for electron-electron scattering. △ Less

Submitted 17 January, 2017; originally announced January 2017.

Comments: 5 pages, 4 figures

Journal ref: Eur. Phys. J. B 90, 151 (2017)

First-principles analysis of electron transport in BaSnO$_3$

Authors: Karthik Krishnaswamy, Burak Himmetoglu, Youngho Kang, Anderson Janotti, Chris G. Van de Walle

Abstract: BaSnO$_3$ (BSO) is a promising transparent conducting oxide (TCO) with reported room-temperature (RT) Hall mobility exceeding 320 cm$^{2}$V$^{-1}$s$^{-1}$. Among perovskite oxides, it has the highest RT mobility, about 30 times higher than that of the prototypical SrTiO$_3$. Using first-principles calculations based on hybrid density functional theory, we elucidate the physical mechanisms that gov… ▽ More BaSnO$_3$ (BSO) is a promising transparent conducting oxide (TCO) with reported room-temperature (RT) Hall mobility exceeding 320 cm$^{2}$V$^{-1}$s$^{-1}$. Among perovskite oxides, it has the highest RT mobility, about 30 times higher than that of the prototypical SrTiO$_3$. Using first-principles calculations based on hybrid density functional theory, we elucidate the physical mechanisms that govern the mobility by studying the details of LO-phonon and ionized impurity scattering. A careful numerical analysis to obtain converged results within the relaxation-time approximation of Boltzmann transport theory is presented. The ${\bf k}$ dependence of the relaxation time is fully taken into account. We find that the high RT mobility in BSO originates not only from a small effective mass, but also from a significant reduction in the phonon scattering rate compared to other perovskite oxides; the origins of this reduction are identified. Ionized impurity scattering influences the total mobility even at RT for dopant densities larger than $5\times10^{18}$ cm$^{-3}$, and becomes comparable to LO-phonon scattering for $1\times10^{20}$ cm$^{-3}$ do**, reducing the drift mobility from its intrinsic LO-phonon-limited value of $\sim$594 cm$^{2}$V$^{-1}$s$^{-1}$ to less than 310 cm$^{2}$V$^{-1}$s$^{-1}$. We suggest pathways to avoid impurity scattering via modulation do** or polar discontinuity do**. We also explicitly calculate the Hall factor and Hall mobility, allowing a direct comparison to experimental reports for bulk and thin films and providing insights into the nature of the dominant mechanisms that limit mobility in state-of-the art samples. △ Less

Submitted 19 October, 2016; originally announced October 2016.

Comments: 13 pages, 9 figures

Journal ref: Phys. Rev. B 95, 205202 (2017)

Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides

Authors: Cyrus E. Dreyer, Anderson Janotti, Chris G. Van de Walle, David Vanderbilt

Abstract: Accurate values for polarization discontinuities between pyroelectric materials are critical for understanding and designing the electronic properties of heterostructures. For wurtzite materials, the zincblende structure has been used in the literature as a reference to determine the effective spontaneous polarization constants. We show that, because the zincblende structure has a nonzero formal p… ▽ More Accurate values for polarization discontinuities between pyroelectric materials are critical for understanding and designing the electronic properties of heterostructures. For wurtzite materials, the zincblende structure has been used in the literature as a reference to determine the effective spontaneous polarization constants. We show that, because the zincblende structure has a nonzero formal polarization, this method results in a spurious contribution to the spontaneous polarization differences between materials. In addition, we address the correct choice of "improper" versus "proper" piezoelectric constants. For the technologically important III-nitride materials GaN, AlN, and InN, we determine polarization discontinuities using a consistent reference based on the layered hexagonal structure and the correct choice of piezoelectric constants, and discuss the results in light of available experimental data. △ Less

Submitted 24 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. X 6, 021038 (2016)

Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors

Authors: Audrius Alkauskas, Cyrus E. Dreyer, John L. Lyons, Chris G. Van de Walle

Abstract: Defect-assisted recombination is an important limitation on efficiency of optoelectronic devices. However, since nonradiative capture rates decrease exponentially with energy of the transition, the mechanisms by which such recombination can take place in wide-band-gap materials are unclear. Using electronic structure calculations we uncover the crucial role of electronic excited states in nonradia… ▽ More Defect-assisted recombination is an important limitation on efficiency of optoelectronic devices. However, since nonradiative capture rates decrease exponentially with energy of the transition, the mechanisms by which such recombination can take place in wide-band-gap materials are unclear. Using electronic structure calculations we uncover the crucial role of electronic excited states in nonradiative recombination processes. The impact is elucidated with examples for the group-III nitrides, for which accumulating experimental evidence indicates that defect-assisted recombination limits efficiency. Our work provides new insights into the physics of nonradiative recombination, and the mechanisms are suggested to be ubiquitous in wide-band-gap semiconductors. △ Less

Submitted 18 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 93, 201304 (2016)

Structural investigation of the bilayer iridate Sr3Ir2O7

Authors: Tom Hogan, Lars Bjaalie, Liuyan Zhao, Carina Belvin, ** Wang, Chris G. Van de Walle, David Hsieh, Stephen D. Wilson

Abstract: A complete structural solution of the bilayer iridate compound Sr3Ir2O7 presently remains outstanding. Previously reported structures for this compound vary and all fail to explain weak structural violations observed in neutron scattering measurements as well as the presence of a net ferromagnetic moment in the basal plane. In this paper, we present single crystal neutron diffraction and rotationa… ▽ More A complete structural solution of the bilayer iridate compound Sr3Ir2O7 presently remains outstanding. Previously reported structures for this compound vary and all fail to explain weak structural violations observed in neutron scattering measurements as well as the presence of a net ferromagnetic moment in the basal plane. In this paper, we present single crystal neutron diffraction and rotational anisotropy second harmonic generation measurements unveiling a lower, monoclinic symmetry inherent to Sr3Ir2O7 . Combined with density functional theory, our measurements identify the correct structural space group as No. 15 (C2/c) and provide clarity regarding the local symmetry of Ir 4+ cations within this spin-orbit Mott material. △ Less

Submitted 23 March, 2016; originally announced March 2016.

Comments: 7 pages, 3 figures

Journal ref: Physical Review B 93, 134110 (2016)

Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO$_3$/SrTiO$_3$ Superlattice from Soft- and Hard- X-ray Standing-Wave Angle-Resolved Photoemission

Authors: D. Eiteneer, G. K. Pálsson, S. Nemšák, A. X. Gray, A. M. Kaiser, J. Son, J. LeBeau, G. Conti, A. A. Greer, A. Keqi, A. Rattanachata, A. Y. Saw, A. Bostwick, E. Rotenberg, E. M. Gullikson, S. Ueda, K. Kobayashi, A. Janotti, C. G. Van de Walle, A. Blanca-Romero, R. Pentcheva, C. M. Schneider, S. Stemmer, C. S. Fadley

Abstract: LaNiO$_3$ (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO$_3$ (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understan… ▽ More LaNiO$_3$ (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO$_3$ (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understand this transition, we have studied a strained LNO/STO superlattice with 10 repeats of [4 unit-cell LNO/3 unit-cell STO] grown on an (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ substrate using soft x-ray standing-wave-excited angle-resolved photoemission (SWARPES), together with soft- and hard- x-ray photoemission measurements of core levels and densities-of-states valence spectra. The experimental results are compared with state-of-the-art density functional theory (DFT) calculations of band structures and densities of states. Using core-level rocking curves and x-ray optical modeling to assess the position of the standing wave, SWARPES measurements are carried out for various incidence angles and used to determine interface-specific changes in momentum-resolved electronic structure. We further show that the momentum-resolved behavior of the Ni 3d eg and t2g states near the Fermi level, as well as those at the bottom of the valence bands, is very similar to recently published SWARPES results for a related La$_{0.7}$Sr$_{0.3}$MnO$_3$/SrTiO$_3$ superlattice that was studied using the same technique (Gray et al., Europhysics Letters 104, 17004 (2013)), which further validates this experimental approach and our conclusions. Our conclusions are also supported in several ways by comparison to DFT calculations for the parent materials and the superlattice, including layer-resolved density-of-states results. △ Less

Submitted 27 May, 2016; v1 submitted 22 October, 2015; originally announced October 2015.

Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films

Authors: Yiling Yu, Yifei Yu, Yongqing Cai, Wei Li, Alper Gurarslan, Hartwin Peelaers, David E. Aspnes, Chris G. Van de Walle, Nhan V. Nguyen, Yong-Wei Zhang, Linyou Cao

Abstract: We systematically measure the dielectric function of atomically thin MoS2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5-7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5-7 lay… ▽ More We systematically measure the dielectric function of atomically thin MoS2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5-7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5-7 layers thick but turns to increase with the layer number for thicker films. We show that this is because the excitonic effect is very strong in the thin MoS2 films and its contribution to the dielectric function may dominate over the contribution of the band structure. We also extract the value of layer-dependent exciton binding energy and Bohr radius in the films by fitting the experimental results with an intuitive model. The dominance of excitonic effects is in stark contrast with what reported at conventional materials whose dielectric functions are usually dictated by band structures. The knowledge of the dielectric function may enable capabilities to engineer the light-matter interactions of atomically thin MoS2 films for the development of novel photonic devices, such as metamaterials, waveguides, light absorbers, and light emitters. △ Less

Submitted 11 October, 2015; originally announced October 2015.

Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO$_3$ embedded in GdTiO$_3$

Authors: S. Nemšák, G. Conti, G. K. Pálsson, C. Conlon, S. Cho, J. Rault, J. Avila, M. -C. Asensio, C. Jackson, P. Moetakef, A. Janotti, L. Bjaalie, B. Himmetoglu, C. G. Van de Walle, L. Balents, C. M. Schneider, S. Stemmer, C. S. Fadley`

Abstract: For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)… ▽ More For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ (LSAT), with the STO layer thicknesses being at what has been suggested is the critical thickness for 2DEG formation. We have studied these with Ti-resonant angle-resolved (ARPES) and angle-integrated photoemission and find that the spectral feature in the spectra associated with the 2DEG is present in the 1.5 unit cell sample, but not in the 1.0 unit cell sample. We also observe through core-level spectra additional states in Ti and Sr, with the strength of a low-binding-energy state for Sr being associated with the appearance of the 2DEG, and we suggest it to have an origin in final-state core-hole screening. △ Less

Submitted 20 November, 2015; v1 submitted 13 August, 2015; originally announced August 2015.

Comments: 12 pages, 4 figures

Journal ref: Appl. Phys. Lett. 107, 231602 (2015)

Energetic, spatial and momentum character of a buried interface: the two-dimensional electron gas between two metal oxides

Authors: S. Nemšák, G. Conti, A. X. Gray, G. K. Pálsson, C. Conlon, D. Eiteneer, A. Keqi, A. Rattanachata, A. Y. Saw, A. Bostwick, L. Moreschini, V. Strocov, M. Kobayashi, W. Stolte, S. Ueda, K. Kobayashi, A. Gloskovskii, W. Drube, C. Jackson, P. Moetakef, A. Janotti, L. Bjaalie, B. Himmetoglu, C. G. Van de Walle, S. Borek , et al. (10 additional authors not shown)

Abstract: The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental and theoretical techniques to the characterization of one such interesting interface system: the two-dimensional electron gas (2DEG) formed in multilayers consist… ▽ More The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental and theoretical techniques to the characterization of one such interesting interface system: the two-dimensional electron gas (2DEG) formed in multilayers consisting of SrTiO$_3$ (STO) and GdTiO$_3$ (GTO). This system has been the subject of multiple studies recently and shown to exhibit very high carrier charge densities and ferromagnetic effects, among other intriguing properties. We have studied a 2DEG-forming multilayer of the form [6 unit cells STO/3 unit cells of GTO]$_{20}$ using a unique array of photoemission techniques including soft and hard x-ray excitation, soft x-ray angle-resolved photoemission, core-level spectroscopy, resonant excitation, and standing-wave effects, as well as theoretical calculations of the electronic structure at several levels and of the actual photoemission process. Standing-wave measurements below and above a strong resonance have been introduced as a powerful method for studying the 2DEG depth distribution. We have thus characterized the spatial and momentum properties of this 2DEG with unprecedented detail, determining via depth-distribution measurements that it is spread throughout the 6 u.c. layer of STO, and measuring the momentum dispersion of its states. The experimental results are supported in several ways by theory, leading to a much more complete picture of the nature of this 2DEG, and suggesting that oxygen vacancies are not the origin of it. Similar multi-technique photoemission studies of such states at buried interfaces, combined with comparable theory, will be a very fruitful future approach for exploring and modifying the fascinating world of buried-interface physics and chemistry. △ Less

Submitted 9 March, 2016; v1 submitted 7 August, 2015; originally announced August 2015.

Comments: 34 pages, 10 figures

Journal ref: Phys. Rev. B 93, 245103 (2016)

Tuning bad metal and non-Fermi liquid behavior in a Mott material: rare earth nickelate thin films

Authors: Evgeny Mikheev, Adam J. Hauser, Burak Himmetoglu, Nelson E. Moreno, Anderson Janotti, Chris G. Van de Walle, Susanne Stemmer

Abstract: Resistances that exceed the Mott-Ioffe-Regel limit, known as bad metal behavior, and non-Fermi liquid behavior are ubiquitous features of the normal state of many strongly correlated materials. Here we establish the conditions that lead to bad metal and non-Fermi liquid phases in NdNiO3, which exhibits a prototype, bandwidth-controlled metal-insulator transition. We show that resistance saturation… ▽ More Resistances that exceed the Mott-Ioffe-Regel limit, known as bad metal behavior, and non-Fermi liquid behavior are ubiquitous features of the normal state of many strongly correlated materials. Here we establish the conditions that lead to bad metal and non-Fermi liquid phases in NdNiO3, which exhibits a prototype, bandwidth-controlled metal-insulator transition. We show that resistance saturation is determined by the magnitude of the Ni eg orbital splitting, which can be tuned by strain in epitaxial films, causing the appearance of bad metal behavior under certain conditions. The results shed light on the nature of a crossover to non-Fermi liquid metal phase and provide a predictive criterion for strong localization. They elucidate a seemingly complex phase behavior as a function of film strain and confinement and provide guidelines for orbital engineering and novel devices. △ Less

Submitted 23 July, 2015; originally announced July 2015.

Comments: Manuscript text, 5 figures and supplement

Journal ref: Sci. Adv. 1, e1500797 (2015)

Decomposition mechanism and the effects of metal additives on the kinetics of lithium alanate

Authors: Khang Hoang, Anderson Janotti, Chris G. Van de Walle

Abstract: First-principles density functional theory studies have been carried out for native defects and transition-metal (Ti and Ni) impurities in lithium alanate (LiAlH$_{4}$), a potential material for hydrogen storage. On the basis of our detailed analysis of the structure, energetics, and migration of lithium-, aluminum-, and hydrogen-related defects, we propose a specific atomistic mechanism for the d… ▽ More First-principles density functional theory studies have been carried out for native defects and transition-metal (Ti and Ni) impurities in lithium alanate (LiAlH$_{4}$), a potential material for hydrogen storage. On the basis of our detailed analysis of the structure, energetics, and migration of lithium-, aluminum-, and hydrogen-related defects, we propose a specific atomistic mechanism for the decomposition and dehydrogenation of LiAlH$_{4}$ that involves mass transport mediated by native point defects. We also discuss how Ti and Ni impurities alter the Fermi-level position with respect to that in the undoped material, thus changing the concentration of charged defects that are responsible for mass transport. This mechanism provides an explanation for the experimentally observed lowering of the temperature for the onset of decomposition and of the activation energy for hydrogen desorption from LiAlH$_{4}$. △ Less

Submitted 31 December, 2014; v1 submitted 30 December, 2014; originally announced December 2014.

Comments: 10 pages, 10 figures. arXiv admin note: text overlap with arXiv:1412.6214

Journal ref: Phys. Chem. Chem. Phys. 14, 2840 (2012)

First-principles calculations of indirect Auger recombination in nitride semiconductors

Authors: Emmanouil Kioupakis, Daniel Steiauf, Patrick Rinke, Kris T. Delaney, Chris G. Van de Walle

Abstract: Auger recombination is an important non-radiative carrier recombination mechanism in many classes of optoelectronic devices. The microscopic Auger processes can be either direct or indirect, mediated by an additional scattering mechanism such as the electron-phonon interaction. Phonon-assisted Auger recombination is particularly strong in nitride materials and affects the efficiency of nitride opt… ▽ More Auger recombination is an important non-radiative carrier recombination mechanism in many classes of optoelectronic devices. The microscopic Auger processes can be either direct or indirect, mediated by an additional scattering mechanism such as the electron-phonon interaction. Phonon-assisted Auger recombination is particularly strong in nitride materials and affects the efficiency of nitride optoelectronic devices at high powers. Here we present a first-principles computational formalism for the study of direct and indirect Auger recombination in direct-band-gap semiconductors and apply it to the case of nitride materials. We show that direct Auger recombination is weak in the nitrides and cannot account for experimental measurements. On the other hand, carrier scattering by phonons and alloy disorder enables indirect Auger processes that can explain the observed loss in devices. We analyze the dominant phonon contributions to the Auger recom- bination rate and the influence of temperature and strain on the values of the Auger coefficients. Auger processes assisted by charged-defect scattering are much weaker than the phonon-assisted ones for realistic defect densities and not important for the device performance. The computational formalism is general and can be applied to the calculation of the Auger coefficient in other classes of optoelectronic materials. △ Less

Submitted 10 August, 2015; v1 submitted 23 December, 2014; originally announced December 2014.

Journal ref: Phys. Rev. B 92, 035207 (2015)

Mechanism for the decomposition of lithium borohydride

Authors: Khang Hoang, Chris G. Van de Walle

Abstract: We report first-principles density functional theory studies of native defects in lithium borohydride (LiBH$_{4}$), a potential material for hydrogen storage. Based on our detailed analysis of the structure, energetics, and migration of lithium-, boron-, and hydrogen-related defects, we propose a specific mechanism for the decomposition and dehydrogenation of LiBH$_{4}$ that involves mass transpor… ▽ More We report first-principles density functional theory studies of native defects in lithium borohydride (LiBH$_{4}$), a potential material for hydrogen storage. Based on our detailed analysis of the structure, energetics, and migration of lithium-, boron-, and hydrogen-related defects, we propose a specific mechanism for the decomposition and dehydrogenation of LiBH$_{4}$ that involves mass transport mediated by native defects. In this mechanism, LiBH$_{4}$ releases borane (BH$_{3}$) at the surface or interface, leaving the negatively charged hydrogen interstitial (H$_{i}^{-}$) in the material, which then acts as the nucleation site for LiH formation. The diffusion of H$_{i}^{-}$ in the bulk LiBH$_{4}$ is the rate-limiting step in the decomposition kinetics. Lithium vacancies and interstitials have low formation energies and are highly mobile. These defects are responsible for maintaining local charge neutrality as other charged defects migrating along the material, and assisting in the formation of LiH. In light of this mechanism, we discuss the effects of metal additives on hydrogen desorption kinetics. △ Less

Submitted 18 December, 2014; originally announced December 2014.

Comments: 8 pages, 5 figures

Journal ref: Int. J. Hydrogen Energy 37, 5825 (2012)

LiH as a Li$^+$ and H$^-$ ion provider

Authors: Khang Hoang, Chris G. Van de Walle

Abstract: We present a first-principles study of the formation and migration of native defects in lithium hydride (LiH), a material of interest in hydrogen storage and lithium-ion batteries. We find that the negatively charged lithium vacancy and positively charged hydrogen vacancy are the dominant defects in LiH with a formation energy of about 0.85 eV. With this low energy, LiH can be a good provider of L… ▽ More We present a first-principles study of the formation and migration of native defects in lithium hydride (LiH), a material of interest in hydrogen storage and lithium-ion batteries. We find that the negatively charged lithium vacancy and positively charged hydrogen vacancy are the dominant defects in LiH with a formation energy of about 0.85 eV. With this low energy, LiH can be a good provider of Li$^+$ and/or H$^-$ ions. Based on our results, we discuss the role of LiH in its reactions with another reactant which are important in hydrogen storage and lithium-ion batteries, and explain the ionic conductivity and hydrogen surface loss as observed in experiments. △ Less

Submitted 18 December, 2014; originally announced December 2014.

Comments: 5 pages, 2 figures

Journal ref: Solid State Ionics 253, 53 (2013)

Mechanisms for the decomposition and dehydrogenation of Li amide/imide

Authors: Khang Hoang, Anderson Janotti, Chris G. Van de Walle

Abstract: Reversible reaction involving Li amide (LiNH$_{2}$) and Li imide (Li$_{2}$NH) is a potential mechanism for hydrogen storage. Recent synchrotron x-ray diffraction experiments [W. I. David et al., J. Am. Chem. Soc. 129, 1594 (2007)] suggest that the transformation between LiNH$_{2}$ and Li$_{2}$NH is a bulk reaction that occurs through non-stoichiometric processes and involves the migration of Li… ▽ More Reversible reaction involving Li amide (LiNH$_{2}$) and Li imide (Li$_{2}$NH) is a potential mechanism for hydrogen storage. Recent synchrotron x-ray diffraction experiments [W. I. David et al., J. Am. Chem. Soc. 129, 1594 (2007)] suggest that the transformation between LiNH$_{2}$ and Li$_{2}$NH is a bulk reaction that occurs through non-stoichiometric processes and involves the migration of Li$^{+}$ and H$^{+}$ ions. In order to understand the atomistic mechanisms behind these processes, we carry out comprehensive first-principles studies of native point defects and defect complexes in the two compounds. We find that both LiNH$_{2}$ and Li$_{2}$NH are prone to Frenkel disorder on the Li sublattice. Lithium interstitials and vacancies have low formation energies and are highly mobile, and therefore play an important role in mass transport and ionic conduction. Hydrogen interstitials and vacancies, on the other hand, are responsible for forming and breaking N$-$H bonds, which is essential in the Li amide/imide reaction. Based on the structure, energetics, and migration of hydrogen-, lithium-, and nitrogen-related defects, we propose that LiNH$_{2}$ decomposes into Li$_{2}$NH and NH$_{3}$ according to two competing mechanisms with different activation energies: one mechanism involves the formation of native defects in the interior of the material, the other at the surface. As a result, the prevailing mechanism and hence the effective activation energy for decomposition depend on the surface-to-volume ratio or the specific surface area, which changes with particle size during ball milling. These mechanisms also provide an explanation for the dehydrogenation of LiNH$_{2}$+LiH mixtures. △ Less

Submitted 18 December, 2014; originally announced December 2014.

Comments: 13 pages, 11 figures

Journal ref: Phys. Rev. B 85, 064115 (2012)

The role of native defects in the transport of charge and mass and the decomposition of Li$_{4}$BN$_{3}$H$_{10}$

Authors: Khang Hoang, Anderson Janotti, Chris G. Van de Walle

Abstract: Li$_{4}$BN$_{3}$H$_{10}$ is of great interest for hydrogen storage and for lithium-ion battery solid electrolytes because of its high hydrogen content and high lithium-ion conductivity, respectively. The practical hydrogen storage application of this complex hydride is, however, limited due to irreversibility and cogeneration of ammonia (NH$_{3}$) during the decomposition. We report a first-princi… ▽ More Li$_{4}$BN$_{3}$H$_{10}$ is of great interest for hydrogen storage and for lithium-ion battery solid electrolytes because of its high hydrogen content and high lithium-ion conductivity, respectively. The practical hydrogen storage application of this complex hydride is, however, limited due to irreversibility and cogeneration of ammonia (NH$_{3}$) during the decomposition. We report a first-principles density-functional theory study of native point defects and defect complexes in Li$_{4}$BN$_{3}$H$_{10}$, and propose an atomistic mechanism for the material's decomposition that involves mass transport mediated by native defects. In light of this specific mechanism, we argue that the release of NH$_{3}$ is associated with the formation and migration of negatively charged hydrogen vacancies inside the material, and it can be manipulated by the incorporation of suitable electrically active impurities. We also find that Li$_{4}$BN$_{3}$H$_{10}$ is prone to Frenkel disorder on the Li sublattice; lithium vacancies and interstitials are highly mobile and play an important role in mass transport and ionic conduction. △ Less

Submitted 18 December, 2014; originally announced December 2014.

Comments: 8 pages, 5 figures

Journal ref: Phys. Chem. Chem. Phys. 16, 25314 (2014)

First-principles study of the mobility of SrTiO$_3$

Authors: Burak Himmetoglu, Anderson Janotti, Hartwin Peelaers, Audrius Alkauskas, Chris G. Van de Walle

Abstract: We investigate the electronic and vibrational spectra of SrTiO$_3$, as well as the coupling between them, using first-principles calculations. We compute electron-phonon scattering rates for the three lowest-energy conduction bands and use Boltzmann transport theory to calculate the room-temperature mobility of SrTiO$_3$. The results agree with experiment and highlight the strong impact of longitu… ▽ More We investigate the electronic and vibrational spectra of SrTiO$_3$, as well as the coupling between them, using first-principles calculations. We compute electron-phonon scattering rates for the three lowest-energy conduction bands and use Boltzmann transport theory to calculate the room-temperature mobility of SrTiO$_3$. The results agree with experiment and highlight the strong impact of longitudinal optical phonon scattering. Our analysis provides important insights into the key factors that determine room temperature mobility, such as the number of conduction bands and the nature and frequencies of longitudinal phonons. Such insights provide routes to engineering materials with enhanced mobilities. △ Less

Submitted 10 December, 2014; originally announced December 2014.

Comments: 5 pages, 5 figures

Journal ref: Physical Review B 90, 241204(R) (2014)

Interband and polaronic excitations in YTiO3 from first principles

Authors: Burak Himmetoglu, Anderson Janotti, Lars Bjaalie, Chris G. Van de Walle

Abstract: YTiO3, as a prototypical Mott insulator, has been the subject of numerous experimental investigations of its electronic structure. The onset of absorption in optical conductivity measurements has generally been interpreted to be due to interband transitions at the fundamental gap. Here we re-examine the electronic structure of YTiO3 using density functional theory with either a Hubbard correction… ▽ More YTiO3, as a prototypical Mott insulator, has been the subject of numerous experimental investigations of its electronic structure. The onset of absorption in optical conductivity measurements has generally been interpreted to be due to interband transitions at the fundamental gap. Here we re-examine the electronic structure of YTiO3 using density functional theory with either a Hubbard correction (DFT+U) or a hybrid functional. Interband transitions turn out to be much higher in energy than the observed onset of optical absorption. However, in case of $p$-type do**, holes tend to become self-trapped in the form of small polarons, localized on individual Ti sites. Exciting electrons from the occupied lower Hubbard band to the small-polaron state then leads to broad infrared absorption, consistent with the onset in the experimental optical conductivity spectra. △ Less

Submitted 23 September, 2014; originally announced September 2014.

Comments: 5 pages, 4 figures, and supplemental information

Journal ref: Physical Review B 90, 161102(R) (2014)

First-principles theory of nonradiative carrier capture via multiphonon emission

Authors: Audrius Alkauskas, Qimin Yan, Chris G. Van de Walle

Abstract: We develop a practical first-principles methodology to determine nonradiative carrier capture coefficients at defects in semiconductors. We consider transitions that occur via multiphonon emission. Parameters in the theory, including electron-phonon coupling matrix elements, are computed consistently using state-of-the-art electronic structure techniques based on hybrid density functional theory.… ▽ More We develop a practical first-principles methodology to determine nonradiative carrier capture coefficients at defects in semiconductors. We consider transitions that occur via multiphonon emission. Parameters in the theory, including electron-phonon coupling matrix elements, are computed consistently using state-of-the-art electronic structure techniques based on hybrid density functional theory. These provide a significantly improved description of bulk band structures, as well as defect geometries and wavefunctions. In order to properly describe carrier capture processes at charged centers, we put forward an approach to treat the effect of long-range Coulomb interactions on scattering states in the framework of supercell calculations. We also discuss the choice of initial conditions for a perturbative treatment of carrier capture. As a benchmark, we apply our theory to several hole-capturing centers in GaN and ZnO, materials of high technological importance in which the role of defects is being actively investigated. Calculated hole capture coefficients are in good agreement with experimental data. We discuss the insights gained into the physics of defects in wide-band-gap semiconductors, such as the strength of electron-phonon coupling and the role of different phonon modes. △ Less

Submitted 16 July, 2014; originally announced July 2014.

Journal ref: Phys. Rev. B 90, 075202 (2014)

First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centre

Authors: Audrius Alkauskas, Bob B. Buckley, David D. Awschalom, Chris G. Van de Walle

Abstract: In this work we present theoretical calculations and analysis of the vibronic structure of the spin-triplet optical transition in diamond nitrogen-vacancy centres. The electronic structure of the defect is described using accurate first-principles methods based on hybrid functionals. We devise a computational methodology to determine the coupling between electrons and phonons during an optical tra… ▽ More In this work we present theoretical calculations and analysis of the vibronic structure of the spin-triplet optical transition in diamond nitrogen-vacancy centres. The electronic structure of the defect is described using accurate first-principles methods based on hybrid functionals. We devise a computational methodology to determine the coupling between electrons and phonons during an optical transition in the dilute limit. As a result, our approach yields a smooth spectral function of electron-phonon coupling and includes both quasi-localized and bulk phonons on equal footings. The luminescence lineshape is determined via the generating function approach. We obtain a highly accurate description of the luminescence band, including all key parameters such as the Huang-Rhys factor, the Debye-Waller factor, and the frequency of the dominant phonon mode. More importantly, our work provides insight into the vibrational structure of nitrogen vacancy centres, in particular the role of local modes and vibrational resonances. In particular, we find that the pronounced mode at 65 meV is a vibrational resonance, and we quantify localization properties of this mode. These excellent results for the benchmark diamond nitrogen-vacancy centre provide confidence that the procedure can be applied to other defects, including alternative systems that are being considered for applications in quantum information processing. △ Less

Submitted 28 May, 2014; originally announced May 2014.

Journal ref: New J. Phys. 16, 073026 (2014)

First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO

Authors: Audrius Alkauskas, John L. Lyons, Daniel Steiauf, Chris G. Van de Walle

Abstract: We present a theoretical study of broadening of defect luminescence bands due to vibronic coupling. Numerical proof is provided for the commonly used assumption that a multi-dimensional vibrational problem can be mapped onto an effective one-dimensional configuration coordinate diagram. Our approach is implemented based on density functional theory with a hybrid functional, resulting in luminescen… ▽ More We present a theoretical study of broadening of defect luminescence bands due to vibronic coupling. Numerical proof is provided for the commonly used assumption that a multi-dimensional vibrational problem can be mapped onto an effective one-dimensional configuration coordinate diagram. Our approach is implemented based on density functional theory with a hybrid functional, resulting in luminescence lineshapes for important defects in GaN and ZnO that show unprecedented agreement with experiment. We find clear trends concerning effective parameters that characterize luminescence bands of donor- and acceptor-type defects, thus facilitating their identification. △ Less

Submitted 12 March, 2013; originally announced March 2013.

Journal ref: Phys. Rev. Lett. 109, 267401 (2012)

Structural origins of the properties of rare earth nickelate superlattices

Authors: **woo Hwang, Junwoo Son, Jack Y. Zhang, Anderson Janotti, Chris G. Van De Walle, Susanne Stemmer

Abstract: NiO6 octahedral tilts in the LaNiO3/SrTiO3 superlattices are quantified using position averaged convergent beam electron diffraction in scanning transmission electron microscopy. It is shown that maintaining oxygen octahedra connectivity across the interface controls the octahedral tilts in the LaNiO3 layers, their lattice parameters and their transport properties. Unlike films and layers that are… ▽ More NiO6 octahedral tilts in the LaNiO3/SrTiO3 superlattices are quantified using position averaged convergent beam electron diffraction in scanning transmission electron microscopy. It is shown that maintaining oxygen octahedra connectivity across the interface controls the octahedral tilts in the LaNiO3 layers, their lattice parameters and their transport properties. Unlike films and layers that are connected on one side to the substrate, subsequent LaNiO3 layers in the superlattice exhibit a relaxation of octahedral tilts towards bulk values. This relaxation is facilitated by correlated tilts in SrTiO3 layers and is correlated with the conductivity enhancement of the LaNiO3 layers in the superlattices relative to individual films. △ Less

Submitted 30 January, 2013; originally announced January 2013.

Comments: Accepted for publication in Physical Review B (Rapid Communication)

Dual behavior of excess electrons in rutile TiO2

Authors: A. Janotti, C. Franchini, J. B. Varley, G. Kresse, C. G. Van de Walle

Abstract: The behavior of electrons in the conduction band of TiO2 and other transition-metal oxides is key to the many applications of these materials. Experiments seem to produce conflicting results: optical and spin-resonance techniques reveal strongly localized small polarons, while electrical measurements show high mobilities that can only be explained by delocalized free electrons. By means of hybrid… ▽ More The behavior of electrons in the conduction band of TiO2 and other transition-metal oxides is key to the many applications of these materials. Experiments seem to produce conflicting results: optical and spin-resonance techniques reveal strongly localized small polarons, while electrical measurements show high mobilities that can only be explained by delocalized free electrons. By means of hybrid functional calculations we resolve this apparent contradiction and show that small polarons can actually coexist with delocalized electrons in the conduction band of TiO2, the former being energetically only slightly more favorable. We also find that small polarons can form complexes with oxygen vacancies and ionized shallow-donor impurities, explaining the rich spectrum of Ti$^{3+}$ species observed in electron spin resonance experiments. △ Less

Submitted 24 December, 2012; originally announced December 2012.

Controlling the density of the 2DEG at the SrTiO3/LaAlO3 interface

Authors: A. Janotti, L. Bjaalie, L. Gordon, C. G. Van de Walle

Abstract: The polar discontinuity at the SrTiO3/LaAlO3 interface (STO/LAO) can in principle sustain an electron density of 3.3E14 cm-2 (0.5 electrons per unit cell). However, experimentally observed densities are more than an order of magnitude lower. Using a combination of first-principles and Schrodinger-Poisson simulations we show that the problem lies in the asymmetric nature of the structure, i.e., the… ▽ More The polar discontinuity at the SrTiO3/LaAlO3 interface (STO/LAO) can in principle sustain an electron density of 3.3E14 cm-2 (0.5 electrons per unit cell). However, experimentally observed densities are more than an order of magnitude lower. Using a combination of first-principles and Schrodinger-Poisson simulations we show that the problem lies in the asymmetric nature of the structure, i.e., the inability to form a second LAO/STO interface that is a mirror image of the first, or to fully passivate the LAO surface. Our insights apply to oxide interfaces in general, explaining for instance why the SrTiO3/GdTiO3 interface has been found to exhibit the full density of 3.3E14 cm-2. △ Less

Submitted 24 December, 2012; originally announced December 2012.

Comments: 5 pages, 3 figures