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Identifying single electron charge sensor events using wavelet edge detection
Authors:
J. R. Prance,
B. J. Van Bael,
C. B. Simmons,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme, comparing the signal to a threshold value, is accurate at low noise levels but is not robust to low-frequency noise and signal drift. We describe an a…
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The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme, comparing the signal to a threshold value, is accurate at low noise levels but is not robust to low-frequency noise and signal drift. We describe an alternative method for identifying charge sensor events using wavelet edge detection. The technique is convenient to use and we show that, with realistic signals and a single tunable parameter, wavelet detection can outperform thresholding and is significantly more tolerant to 1/f and low-frequency noise.
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Submitted 7 June, 2015;
originally announced June 2015.
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Tunable spin-selective loading of a silicon spin qubit
Authors:
C. B. Simmons,
J. R. Prance,
B. J. Van Bael,
Teck Seng Koh,
Zhan Shi,
D. E. Savage,
M. G. Lagally,
R. Joynt,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manip…
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The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manipulation and measurement of a single spin in a quantum dot fabricated in a silicon/silicon-germanium heterostructure. We demonstrate that the rate of loading of electrons into the device can be tuned over an order of magnitude using a gate voltage, that the spin state of the loaded electron depends systematically on the loading voltage level, and that this tunability arises because electron spins can be loaded through excited orbital states of the quantum dot. The longitudinal spin relaxation time T1 is measured using single-shot pulsed techniques and found to be ~3 seconds at a field of 1.85 Tesla. The demonstration of single spin measurement as well as a long spin relaxation time and tunability of the loading are all favorable properties for spintronics and quantum information processing applications.
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Submitted 27 October, 2010;
originally announced October 2010.
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Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot
Authors:
Madhu Thalakulam,
C. B. Simmons,
B. J. Van Bael,
B. M. Rosemeyer,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy dependent, and they vary significantly between different excited states. We show that this phenomenon enables charge sensing measurements of the average electron occupa…
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We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy dependent, and they vary significantly between different excited states. We show that this phenomenon enables charge sensing measurements of the average electron occupation that are analogous to Coulomb diamonds. Excited-state energies can be read directly from the plot, and we develop a rate model that enables a quantitative understanding of the relative sizes of different electron tunnel rates.
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Submitted 13 July, 2011; v1 submitted 5 October, 2010;
originally announced October 2010.
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Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot
Authors:
C. B. Simmons,
Madhu Thalakulam,
B. M. Rosemeyer,
B. J. Van Bael,
E. K. Sackmann,
D. E. Savage,
M. G. Lagally,
R. Joynt,
M. Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes t…
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We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step towards controlling spin qubits in silicon quantum dots.
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Submitted 11 May, 2009;
originally announced May 2009.
