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Large-area synthesis of ferromagnetic Fe$_{5-x}$GeTe$_{2}$/graphene van der Waals heterostructures with Curie temperature above room temperature
Authors:
H. Lv,
A. da Silva,
A. I. Figueroa,
C. Guillemard,
I. Fernández Aguirre,
L. Camosi,
L. Aballe,
M. Valvidares,
S. O. Valenzuela,
J. Schubert,
M. Schmidbauer,
J. Herfort,
M. Hanke,
A. Trampert,
R. Engel-Herbert,
M. Ramsteiner,
J. M. J. Lopes
Abstract:
Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devices with integrated magnetic, electronic and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing to realize highly…
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Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devices with integrated magnetic, electronic and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing to realize highly uniform heterostructures with well-defined interfaces between different 2D layered materials. It also requires that each material component of the heterostructure remains functional, which ideally includes ferromagnetic order above room temperature for 2D ferromagnets. Here, we demonstrate large-area growth of Fe$_{5-x}$GeTe$_{2}$/graphene heterostructures achieved by vdW epitaxy of Fe$_{5-x}$GeTe$_{2}$ on epitaxial graphene. Structural characterization confirmed the realization of a continuous vdW heterostructure film with a sharp interface between Fe$_{5-x}$GeTe$_{2}$ and graphene. Magnetic and transport studies revealed that the ferromagnetic order persists well above 300 K with a perpendicular magnetic anisotropy. In addition, epitaxial graphene on SiC(0001) continues to exhibit a high electronic quality. These results represent an important advance beyond non-scalable flake exfoliation and stacking methods, thus marking a crucial step toward the implementation of ferromagnetic 2D materials in practical applications.
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Submitted 17 March, 2023;
originally announced March 2023.
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Experimental demonstration of a magnetically induced war** transition in a topological insulator mediated by rare-earth surface dopants
Authors:
Beatriz Muñiz Cano,
Yago Ferreiros,
Pierre A. Pantaleón,
Ji Dai,
Massimo Tallarida,
Adriana I. Figueroa,
Vera Marinova,
Kevin García Díez,
Aitor Mugarza,
Sergio O. Valenzuela,
Rodolfo Miranda,
Julio Camarero,
Francisco Guinea,
Jose Angel Silva-Guillén,
Miguel A. Valbuena
Abstract:
Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS), introducing a bandgap in the Dirac cone-shaped topological surface state (TSS). The gap opening in MITs has been predicted to be accompanied by a distortion in the T…
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Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS), introducing a bandgap in the Dirac cone-shaped topological surface state (TSS). The gap opening in MITs has been predicted to be accompanied by a distortion in the TSS, evolving its warped shape from hexagonal to trigonal. In this work, we demonstrate such a transition by means of angle-resolved photoemission spectroscopy after the deposition of low concentrations of magnetic rare earths, namely Er and Dy, on the ternary three-dimensional prototypical topological insulator Bi$_2$Se$_2$Te. Signatures of the gap opening occurring as a consequence of the TRS breaking have also been observed, whose existence is supported by the observation of the aforementioned transition. Moreover, increasing the Er coverage results in a tunable p-type do** of the TSS. As a consequence, the Fermi level (E$_{\textrm{F}}$) of our Bi$_2$Se$_2$Te crystals can be gradually tuned towards the TSS Dirac point, and therefore to the magnetically induced bandgap; thus fulfilling two of the necessary prerequisites for the realization of the quantum anomalous Hall effect (QAHE) in this system. The experimental results are rationalized by a theoretical model where a magnetic Zeeman out-of-plane term is introduced in the hamiltonian governing the TSS band dispersion. Our results offer new strategies to control magnetic interactions with TSSs based on a simple approach and open up viable routes for the realization of the QAHE.
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Submitted 3 February, 2023;
originally announced February 2023.
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Spin-orbit torque switching in 2D ferromagnet / topological insulator heterostructure grown by molecular beam epitaxy
Authors:
Thomas Guillet,
Regina V. Galcera,
Juan F. Sierra,
Marius V. Costache,
Matthieu Jamet,
Frédéric Bonell,
Sergio O. Valenzuela
Abstract:
Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs present large device-to-device variations, resulting in a broad distribution of SOT magnitudes. It has been identified that the interfacial quality between the T…
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Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs present large device-to-device variations, resulting in a broad distribution of SOT magnitudes. It has been identified that the interfacial quality between the TI and the FM is of utmost importance in determining the nature and efficiency of the SOT. To optimize the SOT magnitude and enable ultra-low-power magnetization switching, an atomically smooth interface is necessary. To this end, we have developed the growth of a full van der Waals FM/TI heterostructure by molecular beam epitaxy. The compensated TI (Bi0.4Sb0.6)2Te3 and ferromagnetic Fe3GeTe2 (FGT) were chosen because of their exceptional crystalline quality, low carrier concentration in BST and relatively large Curie temperature and perpendicular magnetic anisotropy in FGT. We characterized the magnitude of the SOTs by using thorough harmonic magnetotransport measurements and showed that the magnetization of an ultrathin FGT film could be switched with a current density Jc < 10^10 A/m^2. In comparison to previous studies utilizing traditional FMs, our findings are highly reliable, displaying little to no variation between devices.
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Submitted 2 February, 2023;
originally announced February 2023.
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Resolving spin currents and spin densities generated by charge-spin interconversion in systems with reduced crystal symmetry
Authors:
Lorenzo Camosi,
Josef Svetlik,
Marius V. Costache,
Williams Savero Torres,
Iván Fernández Aguirre,
Vera Marinova,
Dimitre Dimitrov,
Marin Gospodinov,
Juan F. Sierra,
Sergio O. Valenzuela
Abstract:
The ability to control the generation of spins in arbitrary directions is a long-sought goal in spintronics. Charge-to-spin interconversion (CSI) phenomena depend strongly on symmetry. Systems with reduced crystal symmetry allow anisotropic CSI with unconventional components, where charge and spin currents and the spin polarization are not mutually perpendicular to each other. Here, we demonstrate…
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The ability to control the generation of spins in arbitrary directions is a long-sought goal in spintronics. Charge-to-spin interconversion (CSI) phenomena depend strongly on symmetry. Systems with reduced crystal symmetry allow anisotropic CSI with unconventional components, where charge and spin currents and the spin polarization are not mutually perpendicular to each other. Here, we demonstrate experimentally that the CSI in graphene-WTe2 induces spins with components in all three spatial directions. By performing multi-terminal nonlocal spin precession experiments, with specific magnetic field orientations, we discuss how to disentangle the CSI from the spin Hall and inverse spin galvanic effects.
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Submitted 22 December, 2022;
originally announced December 2022.
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Milliwatt terahertz harmonic generation from topological insulator metamaterials
Authors:
Klaas-Jan Tielrooij,
Alessandro Principi,
David Saleta Reig,
Alexander Block,
Sebin Varghese,
Steffen Schreyeck,
Karl Brunner,
Grzegorz Karczewski,
Igor Ilyakov,
Oleksiy Ponomaryov,
Thales V. A. G. de Oliveira,
Min Chen,
Jan-Christoph Deinert,
Carmen Gomez Carbonell,
Sergio O. Valenzuela,
Laurens W. Molenkamp,
Tobias Kiessling,
Georgy V. Astakhov,
Sergey Kovalev
Abstract:
Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at…
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Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at increasing incident powers, as shown recently for graphene. Here, we demonstrate room-temperature terahertz harmonic generation in a Bi$_2$Se$_3$ topological insulator and topological-insulator-grating metamaterial structures with surface-selective terahertz field enhancement. We obtain a third-harmonic power approaching the milliwatt range for an incident power of 75 mW - an improvement by two orders of magnitude compared to a benchmarked graphene sample. We establish a framework in which this exceptional performance is the result of thermodynamic harmonic generation by the massless topological surface states, benefiting from ultrafast dissipation of electronic heat via surface-bulk Coulomb interactions. These results are an important step towards on-chip terahertz (opto)electronic applications.
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Submitted 1 November, 2022;
originally announced November 2022.
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Van der Waals heterostructures for spintronics and opto-spintronics
Authors:
Juan F. Sierra,
Jaroslav Fabian,
Roland K. Kawakami,
Stephan Roche,
Sergio O. Valenzuela
Abstract:
The large variety of 2D materials and their co-integration in van der Waals (vdW) heterostructures enable innovative device engineering. In addition, their atomically-thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities…
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The large variety of 2D materials and their co-integration in van der Waals (vdW) heterostructures enable innovative device engineering. In addition, their atomically-thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities from thin layers of magnetic and non-magnetic materials and the interfaces between them. Here, we overview recent progress on 2D spintronics and opto-spintronics using vdW heterostructures. After an introduction to the forefront of spin transport research, we highlight the unique spin-related phenomena arising from spin-orbit and magnetic proximity effects. We further describe the ability to create multi-functional hybrid heterostructures based on vdW materials, combining spin, valley and excitonic degrees of freedom. We end with an outlook on perspectives and challenges for the design and production of ultra-compact all-2D spin devices and their potential applications in conventional and quantum technologies.
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Submitted 19 October, 2021;
originally announced October 2021.
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Unraveling heat transport and dissipation in suspended MoSe$_2$ crystals from bulk to monolayer
Authors:
D. Saleta Reig,
S. Varghese,
R. Farris,
A. Block,
J. D. Mehew,
O. Hellman,
P. Woźniak,
M. Sledzinska,
A. El Sachat,
E. Chávez-Ángel,
S. O. Valenzuela,
N. F. Van Hulst,
P. Ordejón,
Z. Zanolli,
C. M. Sotomayor Torres,
M. J. Verstraete,
K. J. Tielrooij
Abstract:
Understanding thermal transport in layered transition metal dichalcogenide (TMD) crystals is crucial for a myriad of applications exploiting these materials. Despite significant efforts, several basic thermal transport properties of TMDs are currently not well understood. Here, we present a combined experimental-theoretical study of the intrinsic lattice thermal conductivity of the representative…
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Understanding thermal transport in layered transition metal dichalcogenide (TMD) crystals is crucial for a myriad of applications exploiting these materials. Despite significant efforts, several basic thermal transport properties of TMDs are currently not well understood. Here, we present a combined experimental-theoretical study of the intrinsic lattice thermal conductivity of the representative TMD MoSe$_2$, focusing on the effect of material thickness and the material's environment. We use Raman thermometry measurements on suspended crystals, where we identify and eliminate crucial artefacts, and perform $ab$ $initio$ simulations with phonons at finite, rather than zero, temperature. We find that phonon dispersions and lifetimes change strongly with thickness, yet (sub)nanometer thin TMD films exhibit a similar in-plane thermal conductivity ($\sim$20~Wm$^{-1}$K$^{-1}$) as bulk crystals ($\sim$40~Wm$^{-1}$K$^{-1}$). This is the result of compensating phonon contributions, in particular low-frequency modes with a surprisingly long mean free path of several micrometers that contribute significantly to thermal transport for monolayers. We furthermore demonstrate that out-of-plane heat dissipation to air is remarkably efficient, in particular for the thinnest crystals. These results are crucial for the design of TMD-based applications in thermal management, thermoelectrics and (opto)electronics.
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Submitted 19 September, 2021;
originally announced September 2021.
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Heat dissipation in few-layer MoS2 and MoS2/hBN heterostructure
Authors:
Alois Arrighi,
Elena del Corro,
Daniel Navarro Urrios,
Marius V. Costache,
Juan F. Sierra,
Kenji Watanabe,
Takashi Taniguchi,
J. A. Garrido,
Sergio O. Valenzuela,
Clivia M. Sotomayor Torres,
Marianna Sledzinska
Abstract:
State-of-the-art fabrication and characterization techniques have been employed to measure the thermal conductivity of suspended, single-crystalline MoS2 and MoS2/hBN heterostructures. Two-laser Raman scattering thermometry was used combined with real time measurements of the absorbed laser power, which allowed us to determine the thermal conductivities without any assumptions. Measurements on MoS…
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State-of-the-art fabrication and characterization techniques have been employed to measure the thermal conductivity of suspended, single-crystalline MoS2 and MoS2/hBN heterostructures. Two-laser Raman scattering thermometry was used combined with real time measurements of the absorbed laser power, which allowed us to determine the thermal conductivities without any assumptions. Measurements on MoS2 layers with thicknesses of 5 and 14 exhibit thermal conductivity in the range between 12 and 24 Wm-1K-1. Additionally, after determining the thermal conductivity of a selected MoS2 sample, an hBN flake was transferred onto it and the effective thermal conductivity of the heterostructure was subsequently measured. Remarkably, despite that the thickness of the hBN layer was less than a third of the thickness of the MoS2 layer, the heterostructure showed an almost eight-fold increase in the thermal conductivity, being able to dissipate more than 10 times the laser power without any visible sign of damage. These results are consistent with a high thermal interface conductance between MoS2 and hBN and an efficient in-plane heat spreading driven by hBN. Indeed, we estimate G 70 MWm-2K-1 which is significantly higher than previously reported values. Our work therefore demonstrates that the insertion of hBN layers in potential MoS2 based devices holds the promise for efficient thermal management.
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Submitted 14 July, 2021;
originally announced July 2021.
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Large-area van der Waals epitaxy and magnetic characterization of Fe$_3$GeTe$_2$ films on graphene
Authors:
J. Marcelo J. Lopes,
Dietmar Czubak,
Eugenio Zallo,
Adriana I. Figueroa,
Charles Guillemard,
Manuel Valvidares,
Juan Rubio Zuazo,
Jesús López-Sanchéz,
Sergio O. Valenzuela,
Michael Hanke,
Manfred Ramsteiner
Abstract:
Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy of the layered magnetic metal Fe$_3$GeTe$_2$ - a 2D crystal with highly tunable properties and a high prospect for room temperature ferromagnetism - directly on…
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Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy of the layered magnetic metal Fe$_3$GeTe$_2$ - a 2D crystal with highly tunable properties and a high prospect for room temperature ferromagnetism - directly on graphene by employing molecular beam epitaxy. Morphological and structural characterization confirmed the realization of large-area, continuous Fe$_3$GeTe$_2$/graphene heterostructure films with stable interfaces and good crystalline quality. Furthermore, magneto-transport and X-ray magnetic circular dichroism investigations confirmed a robust out-of-plane ferromagnetism in the layers, comparable to state-of-the-art exfoliated flakes from bulk crystals. These results are highly relevant for further research on wafer-scale growth of vdW heterostructures combining Fe$_3$GeTe$_2$ with other layered crystals such as transition metal dichalcogenides for the realization of multifunctional, atomically thin devices.
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Submitted 19 April, 2021;
originally announced April 2021.
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arXiv:2102.02644
[pdf]
cond-mat.mes-hall
cond-mat.mtrl-sci
cond-mat.str-el
cond-mat.supr-con
quant-ph
The 2021 Quantum Materials Roadmap
Authors:
Feliciano Giustino,
** Hong Lee,
Felix Trier,
Manuel Bibes,
Stephen M Winter,
Roser Valentí,
Young-Woo Son,
Louis Taillefer,
Christoph Heil,
Adriana I. Figueroa,
Bernard Plaçais,
QuanSheng Wu,
Oleg V. Yazyev,
Erik P. A. M. Bakkers,
Jesper Nygård,
Pol Forn-Diaz,
Silvano De Franceschi,
J. W. McIver,
L. E. F. Foa Torres,
Tony Low,
Anshuman Kumar,
Regina Galceran,
Sergio O. Valenzuela,
Marius V. Costache,
Aurélien Manchon
, et al. (4 additional authors not shown)
Abstract:
In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topologi…
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In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to sha** a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.
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Submitted 4 February, 2021;
originally announced February 2021.
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Absence of magnetic-proximity effect at the interface of Bi$_2$Se$_3$ and (Bi,Sb)$_2$Te$_3$ with EuS
Authors:
A. I. Figueroa,
F. Bonell,
M. G. Cuxart,
M. Valvidares,
P. Gargiani,
G. van der Laan,
A. Mugarza,
S. O. Valenzuela
Abstract:
We performed x-ray magnetic circular dichroism (XMCD) measurements on heterostructures comprising topological insulators (TIs) of the (Bi,Sb)$_2$(Se,Te)$_3$ family and the magnetic insulator EuS. XMCD measurements allow us to investigate element-selective magnetic proximity effects at the very TI/EuS interface. A systematic analysis reveals that there is neither significant induced magnetism withi…
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We performed x-ray magnetic circular dichroism (XMCD) measurements on heterostructures comprising topological insulators (TIs) of the (Bi,Sb)$_2$(Se,Te)$_3$ family and the magnetic insulator EuS. XMCD measurements allow us to investigate element-selective magnetic proximity effects at the very TI/EuS interface. A systematic analysis reveals that there is neither significant induced magnetism within the TI nor an enhancement of the Eu magnetic moment at such interface. The induced magnetic moments in Bi, Sb, Te, and Se sites are lower than the estimated detection limit of the XMCD measurements of $\sim\!10^{-3}$ $μ_\mathrm{B}$/at.
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Submitted 26 November, 2020;
originally announced November 2020.
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Control of spin-orbit torques by interface engineering in topological insulator heterostructures
Authors:
Frédéric Bonell,
Minori Goto,
Guillaume Sauthier,
Juan F. Sierra,
Adriana I. Figueroa,
Marius V. Costache,
Shinji Miwa,
Yoshishige Suzuki,
Sergio O. Valenzuela
Abstract:
(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at…
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(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at the TI/FM interface are essentially unexplored. By combining interface chemical analysis and spin-transfer ferromagnetic resonance (ST-FMR) measurements, we demonstrate that intermixing plays a critical role in the generation of SOTs. By inserting a suitable normal metal spacer, material intermixing is reduced and the TI properties at the interface are largely improved, resulting in strong variations in the nature of the SOTs. A dramatic enhancement of a field-like torque, opposing and surpassing the Oersted-field torque, is observed, which can be attributed to the non-equilibrium spin density in Rashba-split surface bands and to the suppression of spin memory loss.
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Submitted 17 September, 2020;
originally announced September 2020.
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A Molecular Approach for Engineering Interfacial Interactions in Magnetic-Topological Insulator Heterostructures
Authors:
Marc G. Cuxart,
Miguel Angel Valbuena,
Roberto Robles,
César Moreno,
Frédéric Bonell,
Guillaume Sauthier,
Inhar Imaz,
Heng Xu,
Corneliu Nistor,
Alessandro Barla,
Pierluigi Gargiani,
Manuel Valvidares,
Daniel Maspoch,
Pietro Gambardella,
Sergio O. Valenzuela,
Aitor Mugarza
Abstract:
Controlling interfacial interactions in magnetic/topological insulator heterostructures is a major challenge for the emergence of novel spin-dependent electronic phenomena. As for any rational design of heterostructures that rely on proximity effects, one should ideally retain the overall properties of each component while tuning interactions at the interface. However, in most inorganic interfaces…
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Controlling interfacial interactions in magnetic/topological insulator heterostructures is a major challenge for the emergence of novel spin-dependent electronic phenomena. As for any rational design of heterostructures that rely on proximity effects, one should ideally retain the overall properties of each component while tuning interactions at the interface. However, in most inorganic interfaces interactions are too strong, consequently perturbing, and even quenching, both the magnetic moment and the topological surface states at each side of the interface. Here we show that these properties can be preserved by using ligand chemistry to tune the interaction of magnetic ions with the surface states. By depositing Co-based porphyrin and phthalocyanine monolayers on the surface of Bi$_2$Te$_3$ thin films, robust interfaces are formed that preserve undoped topological surface states as well as the pristine magnetic moment of the divalent Co ions. The selected ligands allow us to tune the interfacial hybridization within this weak interaction regime. These results, which are in stark contrast with the observed suppression of the surface state at the first quintuple layer of Bi$_2$Se$_3$ induced by the interaction with Co phthalocyanines, demonstrate the capability of planar metal-organic molecules to span interactions from the strong to the weak limit.
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Submitted 30 April, 2020; v1 submitted 29 April, 2020;
originally announced April 2020.
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Ferromagnetic resonance assisted optomechanical magnetometer
Authors:
M. F. Colombano,
G. Arregui,
F. Bonell,
N. E. Capuj,
E. Chavez-Angel,
A. Pitanti,
S. O. Valenzuela,
C. M. Sotomayor-Torres,
D. Navarro-Urrios,
M. V. Costache
Abstract:
The resonant enhancement of mechanical and optical interaction in optomechanical cavities enables their use as extremely sensitive displacement and force detectors. In this work we demonstrate a hybrid magnetometer that exploits the coupling between the resonant excitation of spin waves in a ferromagnetic insulator and the resonant excitation of the breathing mechanical modes of a glass microspher…
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The resonant enhancement of mechanical and optical interaction in optomechanical cavities enables their use as extremely sensitive displacement and force detectors. In this work we demonstrate a hybrid magnetometer that exploits the coupling between the resonant excitation of spin waves in a ferromagnetic insulator and the resonant excitation of the breathing mechanical modes of a glass microsphere deposited on top. The interaction is mediated by magnetostriction in the ferromagnetic material and the consequent mechanical driving of the microsphere. The magnetometer response thus relies on the spectral overlap between the ferromagnetic resonance and the mechanical modes of the sphere, leading to a peak sensitivity better than 900 pT Hz$^{-1/2}$ at 206 MHz when the overlap is maximized. By externally tuning the ferromagnetic resonance frequency with a static magnetic field we demonstrate sensitivity values at resonance around a few nT Hz$^{-1/2}$ up to the GHz range. Our results show that our hybrid system can be used to build high-speed sensor of oscillating magnetic fields.
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Submitted 3 September, 2020; v1 submitted 9 September, 2019;
originally announced September 2019.
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Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures
Authors:
L. Antonio Benítez,
Williams Savero Torres,
Juan F. Sierra,
Matias Timmermans,
Jose H. Garcia,
Stephan Roche,
Marius V. Costache,
Sergio O. Valenzuela
Abstract:
Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demon…
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Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demonstrate strongly enhanced room-temperature spin-to-charge (StC) conversion in graphene driven by the proximity of a semiconducting transition metal dichalcogenide(WS2). By performing spin precession experiments in properly designed Hall bars, we separate the contributions of the spin Hall and the spin galvanic effects. Remarkably, their corresponding conversion effiencies can be tailored by electrostatic gating in magnitude and sign, peaking nearby the charge neutrality point with a magnitude that is comparable to the largest efficiencies reported to date. Such an unprecedented electric-field tunability provides a new building block for spin generation free from magnetic materials and for ultra-compact magnetic memory technologies.
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Submitted 21 August, 2019;
originally announced August 2019.
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Spin communication over 30 $μ$m long channels of chemical vapor deposited graphene on SiO$_2$
Authors:
Z. M. Gebeyehu,
S. Parui,
J. F. Sierra,
M. Timmermans,
M. J. Esplandiu,
S. Brems,
C. Huyghebaert,
K. Garello,
M. V. Costache,
S. O. Valenzuela
Abstract:
We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $μ$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-layer graphene on SiO$_2$/Si substrates. The spin-lifetime systematically presents a marked minimum at the charge neutrality point, as typically observed in pr…
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We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $μ$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-layer graphene on SiO$_2$/Si substrates. The spin-lifetime systematically presents a marked minimum at the charge neutrality point, as typically observed in pristine exfoliated graphene. However, by studying the carrier density dependence beyond n ~ 5 x 10$^{12}$ cm$^{-2}$, via electrostatic gating, it is found that the spin lifetime reaches a maximum and then starts decreasing, a behavior that is reminiscent of that predicted when the spin-relaxation is driven by spin-orbit interaction. The spin lifetimes and relaxation lengths compare well with state-of-the-art results using exfoliated graphene on SiO$_2$/Si, being a factor two-to-three larger than the best values reported at room temperature using the same substrate. As a result, the spin signal can be readily measured across 30 $μ$m long graphene channels. These observations indicate that Pt-CVD graphene is a promising material for large-scale spin-based logic-in-memory applications.
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Submitted 13 May, 2019;
originally announced May 2019.
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Pseudospin-driven spin relaxation mechanism in graphene
Authors:
Dinh Van Tuan,
Frank Ortmann,
David Soriano,
Sergio O. Valenzuela,
Stephan Roche
Abstract:
The possibility of transporting spin information over long distances in graphene, owing to its small intrinsic spin-orbit coupling (SOC) and the absence of hyperfine interaction, has led to intense research into spintronic applications. However, measured spin relaxation times are orders of magnitude smaller than initially predicted, while the main physical process for spin dephasing and its charge…
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The possibility of transporting spin information over long distances in graphene, owing to its small intrinsic spin-orbit coupling (SOC) and the absence of hyperfine interaction, has led to intense research into spintronic applications. However, measured spin relaxation times are orders of magnitude smaller than initially predicted, while the main physical process for spin dephasing and its charge-density and disorder dependences remain unconvincingly described by conventional mechanisms. Here, we unravel a spin relaxation mechanism for nonmagnetic samples that follows from an entanglement between spin and pseudospin driven by random SOC, which makes it unique to graphene. The mixing between spin and pseudospin-related Berry's phases results in fast spin dephasing even when approaching the ballistic limit, with increasing relaxation times away from the Dirac point, as observed experimentally. The SOC can be caused by adatoms, ripples or even the substrate, suggesting novel spin manipulation strategies based on the pseudospin degree of freedom.
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Submitted 27 April, 2018;
originally announced April 2018.
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Bottom up synthesis of multifunctional nanoporous graphene
Authors:
César Moreno,
Manuel Vilas-Varela,
Bernhard Kretz,
Aran Garcia-Lekue,
Marius V. Costache,
Marcos Paradinas,
Mirco Panighel,
Gustavo Ceballos,
Sergio O. Valenzuela,
Diego Peña,
Aitor Mugarza
Abstract:
Nanosize pores can turn semimetallic graphene into a semiconductor and from being impermeable into the most efficient molecular sieve membrane. However, scaling the pores down to the nanometer, while fulfilling the tight structural constraints imposed by applications, represents an enormous challenge for present top-down strategies. Here we report a bottom-up method to synthesize nanoporous graphe…
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Nanosize pores can turn semimetallic graphene into a semiconductor and from being impermeable into the most efficient molecular sieve membrane. However, scaling the pores down to the nanometer, while fulfilling the tight structural constraints imposed by applications, represents an enormous challenge for present top-down strategies. Here we report a bottom-up method to synthesize nanoporous graphene comprising an ordered array of pores separated by ribbons, which can be tuned down to the one nanometer range. The size, density, morphology and chemical composition of the pores are defined with atomic precision by the design of the molecular precursors. Our measurements further reveal a highly anisotropic electronic structure, where orthogonal one-dimensional electronic bands with an energy gap of ~1 eV coexist with confined pore states, making the nanoporous graphene a highly versatile semiconductor for simultaneous sieving and electrical sensing of molecular species.
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Submitted 25 April, 2018;
originally announced April 2018.
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Determination of the spin-lifetime anisotropy in graphene using oblique spin precession
Authors:
Bart Raes,
Jeroen E. Scheerder,
Marius V. Costache,
Frédéric Bonell,
Juan F. Sierra,
Jo Cuppens,
Joris Van de Vondel,
Sergio O. Valenzuela
Abstract:
We determine the spin-lifetime anisotropy of spin-polarized carriers in graphene. In contrast to prior approaches, our method does not require large out-of-plane magnetic fields and thus it is reliable for both low- and high-carrier densities. We first determine the in-plane spin lifetime by conventional spin precession measurements with magnetic fields perpendicular to the graphene plane. Then, t…
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We determine the spin-lifetime anisotropy of spin-polarized carriers in graphene. In contrast to prior approaches, our method does not require large out-of-plane magnetic fields and thus it is reliable for both low- and high-carrier densities. We first determine the in-plane spin lifetime by conventional spin precession measurements with magnetic fields perpendicular to the graphene plane. Then, to evaluate the out-of-plane spin lifetime, we implement spin precession measurements under oblique magnetic fields that generate an out-of-plane spin population. We find that the spin-lifetime anisotropy of graphene on silicon oxide is independent of carrier density and temperature down to 150 K, and much weaker than previously reported. Indeed, within the experimental uncertainty, the spin relaxation is isotropic. Altogether with the gate dependence of the spin lifetime, this indicates that the spin relaxation is driven by magnetic impurities or random spin-orbit or gauge fields.
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Submitted 25 April, 2018;
originally announced April 2018.
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Spin precession in anisotropic media
Authors:
B. Raes,
A. W. Cummings,
F. Bonell,
M. V. Costache,
J. F. Sierra,
S. Roche,
S. O. Valenzuela
Abstract:
We generalize the diffusive model for spin injection and detection in nonlocal spin structures to account for spin precession under an applied magnetic field in an anisotropic medium, for which the spin lifetime is not unique and depends on the spin orientation.We demonstrate that the spin precession (Hanle) line shape is strongly dependent on the degree of anisotropy and on the orientation of the…
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We generalize the diffusive model for spin injection and detection in nonlocal spin structures to account for spin precession under an applied magnetic field in an anisotropic medium, for which the spin lifetime is not unique and depends on the spin orientation.We demonstrate that the spin precession (Hanle) line shape is strongly dependent on the degree of anisotropy and on the orientation of the magnetic field. In particular, we show that the anisotropy of the spin lifetime can be extracted from the measured spin signal, after dephasing in an oblique magnetic field, by using an analytical formula with a single fitting parameter. Alternatively, after identifying the fingerprints associated with the anisotropy, we propose a simple scaling of the Hanle line shapes at specific magnetic field orientations that results in a universal curve only in the isotropic case. The deviation from the universal curve can be used as a complementary means of quantifying the anisotropy by direct comparison with the solution of our generalized model. Finally, we applied our model to graphene devices and find that the spin relaxation for graphene on silicon oxide is isotropic within our experimental resolution.
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Submitted 25 April, 2018;
originally announced April 2018.
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Thermoelectric spin voltage in graphene
Authors:
Juan F. Sierra,
Ingmar Neumann,
Jo Cuppens,
Bart Raes,
Marius V. Costache,
Sergio O. Valenzuela
Abstract:
In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents. Amongst the most intriguing phenomena is the spin Seebeck effect, in which a thermal gradient gives rise to spin currents that are detected through the inverse spin Hall effect. Non-magn…
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In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents. Amongst the most intriguing phenomena is the spin Seebeck effect, in which a thermal gradient gives rise to spin currents that are detected through the inverse spin Hall effect. Non-magnetic materials such as graphene are also relevant for spin caloritronics, thanks to efficient spin transport, energy-dependent carrier mobility and unique density of states. Here, we propose and demonstrate that a carrier thermal gradient in a graphene lateral spin valve can lead to a large increase of the spin voltage near to the graphene charge neutrality point. Such an increase results from a thermoelectric spin voltage, which is analogous to the voltage in a thermocouple and that can be enhanced by the presence of hot carriers generated by an applied current. These results could prove crucial to drive graphene spintronic devices and, in particular, to sustain pure spin signals with thermal gradients and to tune the remote spin accumulation by varying the spin-injection bias.
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Submitted 25 April, 2018;
originally announced April 2018.
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Strongly anisotropic spin relaxation in graphene/transition metal dichalcogenide heterostructures at room temperature
Authors:
Luis. A. Benítez,
Juan. F. Sierra,
Williams Savero Torres,
Aloïs Arrighi,
Frédéric Bonell,
Marius. V. Costache,
Sergio. O. Valenzuela
Abstract:
Graphene has emerged as the foremost material for future two-dimensional spintronics due to its tuneable electronic properties. In graphene, spin information can be transported over long distances and, in principle, be manipulated by using magnetic correlations or large spin-orbit coupling (SOC) induced by proximity effects. In particular, a dramatic SOC enhancement has been predicted when interfa…
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Graphene has emerged as the foremost material for future two-dimensional spintronics due to its tuneable electronic properties. In graphene, spin information can be transported over long distances and, in principle, be manipulated by using magnetic correlations or large spin-orbit coupling (SOC) induced by proximity effects. In particular, a dramatic SOC enhancement has been predicted when interfacing graphene with a semiconducting transition metal dechalcogenide, such as tungsten disulphide (WS$_2$). Signatures of such an enhancement have recently been reported but the nature of the spin relaxation in these systems remains unknown. Here, we unambiguously demonstrate anisotropic spin dynamics in bilayer heterostructures comprising graphene and WS$_2$. By using out-of-plane spin precession, we show that the spin lifetime is largest when the spins point out of the graphene plane. Moreover, we observe that the spin lifetime varies over one order of magnitude depending on the spin orientation, indicating that the strong spin-valley coupling in WS$_2$ is imprinted in the bilayer and felt by the propagating spins. These findings provide a rich platform to explore coupled spin-valley phenomena and offer novel spin manipulation strategies based on spin relaxation anisotropy in two-dimensional materials.
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Submitted 25 April, 2018; v1 submitted 31 October, 2017;
originally announced October 2017.
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Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures
Authors:
W. Savero Torres,
J. F. Sierra,
L. A. Benítez,
F. Bonell,
M. V. Costache,
S. O. Valenzuela
Abstract:
Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancemen…
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Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large resistivity of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by develo** an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.
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Submitted 6 September, 2017;
originally announced September 2017.
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Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers
Authors:
I. Neumann,
M. V. Costache,
G. Bridoux,
J. F. Sierra,
S. O. Valenzuela
Abstract:
We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when graphene is deposited onto poly(methyl metacrylate) (PMMA) and exposed with sufficient electron-beam dose to cross-link the PMMA, and 10^3-fold when graphene is deposited di…
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We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when graphene is deposited onto poly(methyl metacrylate) (PMMA) and exposed with sufficient electron-beam dose to cross-link the PMMA, and 10^3-fold when graphene is deposited directly onto SiO2 and exposed with identical dose. We attribute the difference to a more efficient carbon deposition in the former case due to an increase in the presence of compounds containing carbon, which are released by the PMMA. The amorphous carbon interface can sustain very large current densities without degrading, which leads to very large spin accumulations exceeding 500 microeVs at room temperature.
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Submitted 15 June, 2015;
originally announced June 2015.
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Hot-Carrier Seebeck Effect: Diffusion and Remote Detection of Hot Carriers in Graphene
Authors:
J. F. Sierra,
I. Neumann,
M. V. Costache,
S. O. Valenzuela
Abstract:
We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical heating, we generate a carrier temperature gradient that results in a measurable thermoelectric voltage VNL across the remaining (detector) leads. Due to the nonloca…
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We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical heating, we generate a carrier temperature gradient that results in a measurable thermoelectric voltage VNL across the remaining (detector) leads. Due to the nonlocal character of the measurement, VNL is exclusively due to the Seebeck effect. Remarkably, a departure from the ordinary relationship between Joule power P and VNL, VNL ~ P, becomes readily apparent at low temperatures, representing a fingerprint of hot-carrier dominated thermoelectricity. By studying VNL as a function of bias, we directly determine the carrier temperature and the characteristic cooling length for hot-carrier propagation, which are key parameters for a variety of new applications that rely on hot-carrier transport.
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Submitted 15 June, 2015;
originally announced June 2015.
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Spin Hall effect
Authors:
Jairo Sinova,
Sergio O. Valenzuela,
J. Wunderlich,
C. H. Back,
T. Jungwirth
Abstract:
Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Although first observed only a decade ago, these effects are already ubiquitous within spintronics as standard spin-current generators and detectors. Here we review the experimental and theoretical results that have established this sub…
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Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Although first observed only a decade ago, these effects are already ubiquitous within spintronics as standard spin-current generators and detectors. Here we review the experimental and theoretical results that have established this sub-field of spintronics. We focus on the results that have converged to give us a clear understanding of the phenomena and how they have evolved from a qualitative to a more quantitative measurement of spin-currents and their associated spin-accumulation. Within the experimental framework, we review optical, transport, and magnetization-dynamics based measurements and link them to both phenomenological and microscopic theories of the effect. Within the theoretical framework, we review the basic mechanisms in both the extrinsic and intrinsic regime which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. We also review the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pum** theory of spin-generation which has proven important in the measurements of the spin Hall angle. We further connect the spin-current generating spin Hall effect to the inverse spin galvanic effect, which often accompanies the SHE, in which an electrical current induces a non-equilibrium spin polarization. These effects share common microscopic origins and can exhibit similar symmetries when present in ferromagnetic/non-magnetic structures through their induced current-driven spin torques. Although we give a short chronological overview, the main body is structured from a pedagogical point of view, focusing on well-established and accepted physics.
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Submitted 12 November, 2014;
originally announced November 2014.
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Fingerprints of Inelastic Transport at the Surface of the Topological Insulator Bi2Se3: Role of Electron-Phonon Coupling
Authors:
M. V. Costache,
I. Neumann,
J. F. Sierra,
V. Marinova,
M. M. Gospodinov,
S. Roche,
S. O. Valenzuela
Abstract:
We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. A linear increase of t…
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We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. A linear increase of the current with voltage is obtained up to a threshold value at which current saturation takes place. We show that the activated behavior, the voltage threshold and the saturation current can all be quantitatively explained by considering a single optical phonon mode with energy $\hbar Ω\approx 8$ meV. This phonon mode strongly interacts with the surface states of the material and represents the dominant source of scattering at the surface at high electric fields.
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Submitted 8 April, 2014;
originally announced April 2014.
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Magnon-drag thermopile
Authors:
Marius V. Costache,
German Bridoux,
Ingmar Neumann,
Sergio O. Valenzuela
Abstract:
Thermoelectric effects in spintronics are gathering increasing attention as a means of managing heat in nanoscale structures and of controlling spin information by using heat flow. Thermal magnons (spin-wave quanta) are expected to play a major role, however, little is known about the underlying physical mechanisms involved. The reason is the lack of information about magnon interactions and of re…
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Thermoelectric effects in spintronics are gathering increasing attention as a means of managing heat in nanoscale structures and of controlling spin information by using heat flow. Thermal magnons (spin-wave quanta) are expected to play a major role, however, little is known about the underlying physical mechanisms involved. The reason is the lack of information about magnon interactions and of reliable methods to obtain it, in particular for electrical conductors because of the intricate influence of electrons. Here, we demonstrate a conceptually new device that allows us to gather information on magnon-electron scattering and magnon-drag effects. The device resembles a thermopile formed by a large number of pairs of ferromagnetic wires placed between a hot and a cold source and connected thermally in parallel and electrically in series. By controlling the relative orientation of the magnetization in pairs of wires, the magnon-drag can be studied independently of the electron and phonon-drag thermoelectric effects. Measurements as a function of temperature reveal the effect on magnon drag following a variation of magnon and phonon populations. This information is crucial to understand the physics of electron-magnon interactions, magnon dynamics and thermal spin transport.
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Submitted 26 March, 2012;
originally announced March 2012.
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Experimental Spin Ratchet
Authors:
Marius V. Costache,
Sergio O. Valenzuela
Abstract:
Spintronics relies on the ability to transport and utilize the spin properties of an electron rather than its charge. We describe a spin rachet at the single-electron level that produces spin currents with no net bias or charge transport. Our device is based on the ground state energetics of a single electron transistor comprising a superconducting island connected to normal leads via tunnel barri…
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Spintronics relies on the ability to transport and utilize the spin properties of an electron rather than its charge. We describe a spin rachet at the single-electron level that produces spin currents with no net bias or charge transport. Our device is based on the ground state energetics of a single electron transistor comprising a superconducting island connected to normal leads via tunnel barriers with different resistances that break spatial symmetry. We demonstrate spin transport and quantify the spin ratchet efficiency using ferromagnetic leads with known spin polarization. Our results are modeled theoretically and provide a robust route to the generation and manipulation of pure spin currents.
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Submitted 1 March, 2011;
originally announced March 2011.
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Nonlocal Electronic Spin Detection, Spin Accumulation and the Spin Hall effect
Authors:
Sergio O. Valenzuela
Abstract:
In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the induced spin accumulation or associated spin currents are detected by means of a second ferromagnet or the reciprocal spin Hall effect, respectively. This arti…
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In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the induced spin accumulation or associated spin currents are detected by means of a second ferromagnet or the reciprocal spin Hall effect, respectively. This article reviews the current status of this subject, describing both recent progress and well-established results. The emphasis is on experimental techniques and accomplishments that brought about important advances in spin phenomena and possible technological applications. These advances include, amongst others, the characterization of spin diffusion and precession in a variety of materials, such as metals, semiconductors and graphene, the determination of the spin polarization of tunneling electrons as a function of the bias voltage, and the implementation of magnetization reversal in nanoscale ferromagnetic particles with pure spin currents.
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Submitted 30 November, 2009;
originally announced November 2009.
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Large-amplitude driving of a superconducting artificial atom: Interferometry, cooling, and amplitude spectroscopy
Authors:
William D. Oliver,
Sergio O. Valenzuela
Abstract:
Superconducting persistent-current qubits are quantum-coherent artificial atoms with multiple, tunable energy levels. In the presence of large-amplitude harmonic excitation, the qubit state can be driven through one or more of the constituent energy-level avoided crossings. The resulting Landau-Zener-Stueckelberg (LZS) transitions mediate a rich array of quantum-coherent phenomena. We review her…
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Superconducting persistent-current qubits are quantum-coherent artificial atoms with multiple, tunable energy levels. In the presence of large-amplitude harmonic excitation, the qubit state can be driven through one or more of the constituent energy-level avoided crossings. The resulting Landau-Zener-Stueckelberg (LZS) transitions mediate a rich array of quantum-coherent phenomena. We review here three experimental works based on LZS transitions: Mach-Zehnder-type interferometry between repeated LZS transitions, microwave-induced cooling, and amplitude spectroscopy. These experiments exhibit a remarkable agreement with theory, and are extensible to other solid-state and atomic qubit modalities. We anticipate they will find application to qubit state-preparation and control methods for quantum information science and technology.
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Submitted 31 May, 2009;
originally announced June 2009.
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Pulse calibration and non-adiabatic control of solid-state artificial atoms
Authors:
Jonas Bylander,
Mark S. Rudner,
Andrey V. Shytov,
Sergio O. Valenzuela,
David M. Berns,
Karl K. Berggren,
Leonid S. Levitov,
William D. Oliver
Abstract:
Transitions in an artificial atom, driven non-adiabatically through an energy-level avoided crossing, can be controlled by carefully engineering the driving protocol. We have driven a superconducting persistent-current qubit with a large-amplitude, radio-frequency field. By applying a bi-harmonic waveform generated by a digital source, we demonstrate a map** between the amplitude and phase of…
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Transitions in an artificial atom, driven non-adiabatically through an energy-level avoided crossing, can be controlled by carefully engineering the driving protocol. We have driven a superconducting persistent-current qubit with a large-amplitude, radio-frequency field. By applying a bi-harmonic waveform generated by a digital source, we demonstrate a map** between the amplitude and phase of the harmonics produced at the source and those received by the device. This allows us to image the actual waveform at the device. This information is used to engineer a desired time dependence, as confirmed by detailed comparison with simulation.
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Submitted 28 December, 2008;
originally announced December 2008.
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Quantum Phase Tomography of a Strongly Driven Qubit
Authors:
M. S. Rudner,
A. V. Shytov,
L. S. Levitov,
D. M. Berns,
W. D. Oliver,
S. O. Valenzuela,
T. P. Orlando
Abstract:
The interference between repeated Landau-Zener transitions in a qubit swept through an avoided level crossing results in Stueckelberg oscillations in qubit magnetization. The resulting oscillatory patterns are a hallmark of the coherent strongly-driven regime in qubits, quantum dots and other two-level systems. The two-dimensional Fourier transforms of these patterns are found to exhibit a famil…
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The interference between repeated Landau-Zener transitions in a qubit swept through an avoided level crossing results in Stueckelberg oscillations in qubit magnetization. The resulting oscillatory patterns are a hallmark of the coherent strongly-driven regime in qubits, quantum dots and other two-level systems. The two-dimensional Fourier transforms of these patterns are found to exhibit a family of one-dimensional curves in Fourier space, in agreement with recent observations in a superconducting qubit. We interpret these images in terms of time evolution of the quantum phase of qubit state and show that they can be used to probe dephasing mechanisms in the qubit.
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Submitted 12 May, 2008;
originally announced May 2008.
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Amplitude Spectroscopy of a Solid-State Artificial Atom
Authors:
David M. Berns,
Mark S. Rudner,
Sergio O. Valenzuela,
Karl K. Berggren,
William D. Oliver,
Leonid S. Levitov,
Terry P. Orlando
Abstract:
The energy-level structure of a quantum system plays a fundamental role in determining its behavior and manifests itself in a discrete absorption and emission spectrum. Conventionally, spectra are probed via frequency spectroscopy whereby the frequency νof a harmonic driving field is varied to fulfill the conditions ΔE = h ν, where the driving field is resonant with the level separation ΔE (h is…
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The energy-level structure of a quantum system plays a fundamental role in determining its behavior and manifests itself in a discrete absorption and emission spectrum. Conventionally, spectra are probed via frequency spectroscopy whereby the frequency νof a harmonic driving field is varied to fulfill the conditions ΔE = h ν, where the driving field is resonant with the level separation ΔE (h is Planck's constant). Although this technique has been successfully employed in a variety of physical systems, including natural and artificial atoms and molecules, its application is not universally straightforward, and becomes extremely challenging for frequencies in the range of 10's and 100's of gigahertz. Here we demonstrate an alternative approach, whereby a harmonic driving field sweeps the atom through its energy-level avoided crossings at a fixed frequency, surmounting many of the limitations of the conventional approach. Spectroscopic information is obtained from the amplitude dependence of the system response. The resulting ``spectroscopy diamonds'' contain interference patterns and population inversion that serve as a fingerprint of the atom's spectrum. By analyzing these features, we determine the energy spectrum of a manifold of states with energies from 0.01 to 120 GHz \times h in a superconducting artificial atom, using a driving frequency near 0.1 GHz. This approach provides a means to manipulate and characterize systems over a broad bandwidth, using only a single driving frequency that may be orders of magnitude smaller than the energy scales being probed.
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Submitted 11 May, 2008;
originally announced May 2008.
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Microwave-Induced Cooling of a Superconducting Qubit
Authors:
S. O. Valenzuela,
W. D. Oliver,
D. M. Berns,
K. K. Berggren,
L. S. Levitov,
T. P. Orlando
Abstract:
We demonstrated microwave-induced cooling in a superconducting flux qubit. The thermal population in the first-excited state of the qubit is driven to a higher-excited state by way of a sideband transition. Subsequent relaxation into the ground state results in cooling. Effective temperatures as low as Teff~ 3 millikelvin are achieved for bath temperatures Tbath = 30 - 400 millikelvin, a cooling…
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We demonstrated microwave-induced cooling in a superconducting flux qubit. The thermal population in the first-excited state of the qubit is driven to a higher-excited state by way of a sideband transition. Subsequent relaxation into the ground state results in cooling. Effective temperatures as low as Teff~ 3 millikelvin are achieved for bath temperatures Tbath = 30 - 400 millikelvin, a cooling factor between 10 and 100. This demonstration provides an analog to optical cooling of trapped ions and atoms and is generalizable to other solid-state quantum systems. Active cooling of qubits, applied to quantum information science, provides a means for qubit-state preparation with improved fidelity and for suppressing decoherence in multi-qubit systems.
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Submitted 7 February, 2007;
originally announced February 2007.
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Coherent Quasiclassical Dynamics of a Persistent Current Qubit
Authors:
D. M. Berns,
W. D. Oliver,
S. O. Valenzuela,
A. V. Shytov,
K. K. Berggren,
L. S. Levitov,
T. P. Orlando
Abstract:
A new regime of coherent quantum dynamics of a qubit is realized at low driving frequencies in the strong driving limit. Coherent transitions between qubit states occur via the Landau-Zener process when the system is swept through an energy-level avoided crossing. The quantum interference mediated by repeated transitions gives rise to an oscillatory dependence of the qubit population on the driv…
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A new regime of coherent quantum dynamics of a qubit is realized at low driving frequencies in the strong driving limit. Coherent transitions between qubit states occur via the Landau-Zener process when the system is swept through an energy-level avoided crossing. The quantum interference mediated by repeated transitions gives rise to an oscillatory dependence of the qubit population on the driving field amplitude and flux detuning. These interference fringes, which at high frequencies consist of individual multiphoton resonances, persist even for driving frequencies smaller than the decoherence rate, where individual resonances are no longer distinguishable. A theoretical model that incorporates dephasing agrees well with the observations.
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Submitted 11 June, 2006;
originally announced June 2006.
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Direct electronic measurement of the spin Hall effect
Authors:
Sergio O. Valenzuela,
M. Tinkham
Abstract:
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling, which couples the spin of an electron to its momentum, is attracting considerable interest. In a spin-orbit-coupled system, a nonzero spin-current is predicted…
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The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling, which couples the spin of an electron to its momentum, is attracting considerable interest. In a spin-orbit-coupled system, a nonzero spin-current is predicted in a direction perpendicular to the applied electric field, giving rise to a "spin Hall effect"[2-4]. Consistent with this effect, electrically-induced spin polarization was recently detected by optical techniques at the edges of a semiconductor channel[5] and in two-dimensional electron gases in semiconductor heterostructures[6,7]. Here we report electrical measurements of the spin-Hall effect in a diffusive metallic conductor, using a ferromagnetic electrode in combination with a tunnel barrier to inject a spin-polarized current. In our devices, we observe an induced voltage that results exclusively from the conversion of the injected spin current into charge imbalance through the spin Hall effect. Such a voltage is proportional to the component of the injected spins that is perpendicular to the plane defined by the spin current direction and the voltage probes. These experiments reveal opportunities for efficient spin detection without the need for magnetic materials, which could lead to useful spintronics devices that integrate information processing and data storage.
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Submitted 16 May, 2006;
originally announced May 2006.
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Oscillatory dynamics of a superconductor vortex lattice in high amplitude ac magnetic fields
Authors:
A. J. Moreno,
S. O. Valenzuela,
G. Pasquini,
V. Bekeris
Abstract:
In this work we study by ac susceptibility measurements the evolution of the solid vortex lattice mobility under oscillating forces. Previous work had already shown that in YBCO single crystals, below the melting transition, a temporarily symmetric magnetic ac field (e.g. sinusoidal, square, triangular) can heal the vortex lattice (VL) and increase its mobility, but a temporarily asymmetric one…
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In this work we study by ac susceptibility measurements the evolution of the solid vortex lattice mobility under oscillating forces. Previous work had already shown that in YBCO single crystals, below the melting transition, a temporarily symmetric magnetic ac field (e.g. sinusoidal, square, triangular) can heal the vortex lattice (VL) and increase its mobility, but a temporarily asymmetric one (e.g. sawtooth) of the same amplitude can tear the lattice into a more pinned disordered state. In this work we present evidence that the mobility of the VL is reduced for large vortex displacements, in agreement with predictions of recent simulations. We show that with large symmetric oscillating fields both an initially ordered or an initially disordered VL configuration evolve towards a less mobile lattice, supporting the scenario of plastic flow.
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Submitted 1 March, 2005;
originally announced March 2005.
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Voltage Dependence of Spin Polarized Tunneling
Authors:
S. O. Valenzuela,
D. J. Monsma,
C. M. Marcus,
V. Narayanamurti,
M. Tinkham
Abstract:
A mesoscopic spin valve is used to determine the effective spin polarization of electrons tunneling from and into ferromagnetic transition metals at finite voltages. The tunneling spin polarization from the ferromagnet (FM) slowly decreases with bias, but drops faster and even inverts with voltage when electrons tunnel into it. A bias-dependent free electron model shows that in the former case e…
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A mesoscopic spin valve is used to determine the effective spin polarization of electrons tunneling from and into ferromagnetic transition metals at finite voltages. The tunneling spin polarization from the ferromagnet (FM) slowly decreases with bias, but drops faster and even inverts with voltage when electrons tunnel into it. A bias-dependent free electron model shows that in the former case electrons originate near the Fermi level of the FM with large polarization whereas in the latter, electrons tunnel into hot electron states for which the polarization is significantly reduced. The change in sign is ascribed to the detailed matching of the electron wave function through the tunnel barrier.
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Submitted 19 July, 2004;
originally announced July 2004.
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DC measurements of macroscopic quantum levels in a superconducting qubit structure with a time-ordered meter
Authors:
D. S. Crankshaw,
K. Segall,
D. Nakada,
T. P. Orlando,
L. S. Levitov,
S. Lloyd,
S. O. Valenzuela,
N. Markovic,
M. Tinkham,
K. K. Berggren
Abstract:
DC measurements are made in a superconducting, persistent current qubit structure with a time-ordered meter. The persistent-current qubit has a double-well potential, with the two minima corresponding to magnetization states of opposite sign. Macroscopic resonant tunneling between the two wells is observed at values of energy bias that correspond to the positions of the calculated quantum levels…
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DC measurements are made in a superconducting, persistent current qubit structure with a time-ordered meter. The persistent-current qubit has a double-well potential, with the two minima corresponding to magnetization states of opposite sign. Macroscopic resonant tunneling between the two wells is observed at values of energy bias that correspond to the positions of the calculated quantum levels. The magnetometer, a Superconducting Quantum Interference Device (SQUID), detects the state of the qubit in a time-ordered fashion, measuring one state before the other. This results in a different meter output depending on the initial state, providing different signatures of the energy levels for each tunneling direction. From these measurements, the intrawell relaxation time is found to be about 50 microseconds.
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Submitted 20 November, 2003; v1 submitted 19 November, 2003;
originally announced November 2003.
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Impact of time-ordered measurements of the two states in a niobium superconducting qubit structure
Authors:
K. Segall,
D. Crankshaw,
D. Nakada,
T. P. Orlando,
L. S. Levitov,
S. Lloyd,
N. Markovic,
S. O. Valenzuela,
M. Tinkham,
K. K. Berggren
Abstract:
Measurements of thermal activation are made in a superconducting, niobium Persistent-Current (PC) qubit structure, which has two stable classical states of equal and opposite circulating current. The magnetization signal is read out by ram** the bias current of a DC SQUID. This ram** causes time-ordered measurements of the two states, where measurement of one state occurs before the other. T…
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Measurements of thermal activation are made in a superconducting, niobium Persistent-Current (PC) qubit structure, which has two stable classical states of equal and opposite circulating current. The magnetization signal is read out by ram** the bias current of a DC SQUID. This ram** causes time-ordered measurements of the two states, where measurement of one state occurs before the other. This time-ordering results in an effective measurement time, which can be used to probe the thermal activation rate between the two states. Fitting the magnetization signal as a function of temperature and ramp time allows one to estimate a quality factor of 10^6 for our devices, a value favorable for the observation of long quantum coherence times at lower temperatures.
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Submitted 26 February, 2003;
originally announced February 2003.
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Order and mobility of solid vortex matter in oscillatory driving currents
Authors:
Sergio O. Valenzuela
Abstract:
We study numerically the evolution of the degree order and mobility of the vortex lattice under steady and oscillating applied forces. We show that the oscillatory motion of vortices can favor an ordered structure, even when the motion of the vortices is plastic when the same force is applied in a constant way. Our results relate the spatial order of the vortex lattice with its mobility and they…
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We study numerically the evolution of the degree order and mobility of the vortex lattice under steady and oscillating applied forces. We show that the oscillatory motion of vortices can favor an ordered structure, even when the motion of the vortices is plastic when the same force is applied in a constant way. Our results relate the spatial order of the vortex lattice with its mobility and they are in agreement with recent experiments. We predict that, in oscillating applied forces, the lattice orients with a principal axis perpendicular to the direction of motion.
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Submitted 12 November, 2002;
originally announced November 2002.
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Elastic-to-plastic crossover below the peak effect in the vortex solid of YBa2Cu3O7 single crystals
Authors:
Sergio O. Valenzuela,
Boris Maiorov,
Eduardo Osquiguil,
Victoria Bekeris
Abstract:
We report on transport and ac susceptibility studies below the peak effect in twinned YBa2Cu3O7 single crystals. We find that disorder generated at the peak effect can be partially inhibited by forcing vortices to move with an ac driving current. The vortex system can be additionally ordered below a well-defined temperature where elastic interactions between vortices overcome pinning-generated s…
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We report on transport and ac susceptibility studies below the peak effect in twinned YBa2Cu3O7 single crystals. We find that disorder generated at the peak effect can be partially inhibited by forcing vortices to move with an ac driving current. The vortex system can be additionally ordered below a well-defined temperature where elastic interactions between vortices overcome pinning-generated stress and a plastic to elastic crossover seems to occur. The combined effect of these two processes results in vortex structures with different mobilities that give place to history effects.
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Submitted 29 January, 2002;
originally announced January 2002.
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History effects and pinning regimes in solid vortex matter
Authors:
Sergio O. Valenzuela,
Victoria Bekeris
Abstract:
We propose a phenomenological model that accounts for the history effects observed in ac susceptibility measurements in YBa2Cu3O7 single crystals [Phys. Rev. Lett. 84, 4200 (2000) and Phys. Rev. Lett. 86, 504 (2001)]. Central to the model is the assumption that the penetrating ac magnetic field modifies the vortex lattice mobility, trap** different robust dynamical states in different regions…
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We propose a phenomenological model that accounts for the history effects observed in ac susceptibility measurements in YBa2Cu3O7 single crystals [Phys. Rev. Lett. 84, 4200 (2000) and Phys. Rev. Lett. 86, 504 (2001)]. Central to the model is the assumption that the penetrating ac magnetic field modifies the vortex lattice mobility, trap** different robust dynamical states in different regions of the sample. We discuss in detail on the response of the superconductor to an ac magnetic field when the vortex lattice mobility is not uniform inside the sample. We begin with an analytical description for a simple geometry (slab) and then we perform numerical calculations for a strip in a transverse magnetic field which include relaxation effects. In calculations, the vortex system is assumed to coexist in different pinning regimes. The vortex behavior in the regions where the induced current density j has been always below a given threshold (j_c^>) is described by an elastic Campbell-like regime (or a critical state regime with local high critical current density, j_c^>). When the VS is shaken by symmetrical (e.g. sinusoidal) ac fields, the critical current density is modified to j_c^< (which is smaller than j_c^>) at regions where vortices have been forced to oscillate by a current density larger than j_c^>. Experimentally, an initial state with high critical current density (j_c^>) can be obtained by zero field cooling, field cooling (with no applied ac field) or by shaking the vortex lattice with an asymmetrical (e.g. sawtooth) field. We compare our calculations with experimental ac susceptibility results in YBa2Cu3O7 single crystals.
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Submitted 21 January, 2002;
originally announced January 2002.
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Oscillatory dynamics and organization of the vortex solid in YBa2Cu3O7 single crystals
Authors:
S. O. Valenzuela,
V. Bekeris
Abstract:
We report on the degree of order of the vortex solid in YBa2Cu3O7 single crystals observed in ac susceptibility measurements. We show that when vortices are "shaken" by a temporarily symmetric ac field they are driven into an easy-to-move, ordered structure but, on the contrary, when the ac field is temporarily asymmetric, they are driven into a more pinned disordered state. This is characterist…
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We report on the degree of order of the vortex solid in YBa2Cu3O7 single crystals observed in ac susceptibility measurements. We show that when vortices are "shaken" by a temporarily symmetric ac field they are driven into an easy-to-move, ordered structure but, on the contrary, when the ac field is temporarily asymmetric, they are driven into a more pinned disordered state. This is characteristic of tearing of the vortex lattice and shows that ordering due to symmetric ac fields is essentially different from an equilibration process or a dynamical crystallization that is expected to occur at high driving currents.
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Submitted 17 April, 2001;
originally announced April 2001.
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Plasticity and memory effects in the vortex solid phase of twinned YBa2Cu3O7 single crystals
Authors:
Sergio O. Valenzuela,
Victoria Bekeris
Abstract:
We report on marked memory effects in the vortex system of twinned YBa2Cu3O7 single crystals observed in ac susceptibility measurements. We show that the vortex system can be trapped in different metastable states with variable degree of order arising in response to different system histories. The pressure exerted by the oscillating ac field assists the vortex system in ordering, locally reducin…
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We report on marked memory effects in the vortex system of twinned YBa2Cu3O7 single crystals observed in ac susceptibility measurements. We show that the vortex system can be trapped in different metastable states with variable degree of order arising in response to different system histories. The pressure exerted by the oscillating ac field assists the vortex system in ordering, locally reducing the critical current density in the penetrated outer zone of the sample. The robustness of the ordered and disordered states together with the spatial profile of the critical current density lead to the observed memory effects.
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Submitted 31 July, 2000;
originally announced August 2000.
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Measuring the interaction force between a high temperature superconductor and a permanent magnet
Authors:
S. O. Valenzuela,
G. A. Jorge,
E. Rodriguez
Abstract:
Repulsive and attractive forces are both possible between a superconducting sample and a permanent magnet, and they can give place to magnetic levitation or free-suspension phenomena, respectively. We show experiments to quantify this magnetic interaction which represents a promising field regarding to short-term technological applications of high temperature superconductors. The measuring techn…
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Repulsive and attractive forces are both possible between a superconducting sample and a permanent magnet, and they can give place to magnetic levitation or free-suspension phenomena, respectively. We show experiments to quantify this magnetic interaction which represents a promising field regarding to short-term technological applications of high temperature superconductors. The measuring technique employs an electronic balance and a rare-earth magnet that induces a magnetic moment in a melt-textured YBa2Cu3O7 superconductor immersed in liquid nitrogen. The simple design of the experiments allows a fast and easy implementation in the advanced physics laboratory with a minimum cost. Actual levitation and suspension demonstrations can be done simultaneously as a help to interpret magnetic force measurements.
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Submitted 6 May, 1999;
originally announced May 1999.