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Developments and applications of the OPTIMADE API for materials discovery, design, and data exchange
Authors:
Matthew L. Evans,
Johan Bergsma,
Andrius Merkys,
Casper W. Andersen,
Oskar B. Andersson,
Daniel Beltrán,
Evgeny Blokhin,
Tara M. Boland,
Rubén Castañeda Balderas,
Kamal Choudhary,
Alberto Díaz Díaz,
Rodrigo Domínguez García,
Hagen Eckert,
Kristjan Eimre,
María Elena Fuentes Montero,
Adam M. Krajewski,
Jens Jørgen Mortensen,
José Manuel Nápoles Duarte,
Jacob Pietryga,
Ji Qi,
Felipe de Jesús Trejo Carrillo,
Antanas Vaitkus,
Jusong Yu,
Adam Zettel,
Pedro Baptista de Castro
, et al. (34 additional authors not shown)
Abstract:
The Open Databases Integration for Materials Design (OPTIMADE) application programming interface (API) empowers users with holistic access to a growing federation of databases, enhancing the accessibility and discoverability of materials and chemical data. Since the first release of the OPTIMADE specification (v1.0), the API has undergone significant development, leading to the upcoming v1.2 relea…
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The Open Databases Integration for Materials Design (OPTIMADE) application programming interface (API) empowers users with holistic access to a growing federation of databases, enhancing the accessibility and discoverability of materials and chemical data. Since the first release of the OPTIMADE specification (v1.0), the API has undergone significant development, leading to the upcoming v1.2 release, and has underpinned multiple scientific studies. In this work, we highlight the latest features of the API format, accompanying software tools, and provide an update on the implementation of OPTIMADE in contributing materials databases. We end by providing several use cases that demonstrate the utility of the OPTIMADE API in materials research that continue to drive its ongoing development.
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Submitted 5 April, 2024; v1 submitted 1 February, 2024;
originally announced February 2024.
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The effect of magnetic impurity scattering on transport in topological insulators
Authors:
Jesse A. Vaitkus,
Cong Son Ho,
Jared H. Cole
Abstract:
Charge transport in topological insulators is primarily characterised by so-called topologically projected helical edge states, where charge carriers are correlated in spin and momentum. In principle, dissipation-less current can be carried by these edge states as backscattering from impurities and defects is suppressed as long as time-reversal symmetry is not broken. However, applied magnetic fie…
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Charge transport in topological insulators is primarily characterised by so-called topologically projected helical edge states, where charge carriers are correlated in spin and momentum. In principle, dissipation-less current can be carried by these edge states as backscattering from impurities and defects is suppressed as long as time-reversal symmetry is not broken. However, applied magnetic fields or underlying nuclear spin-defects in the substrate can break this time reversal symmetry. In particular, magnetic impurities lead to back-scattering by spin-flip processes. We have investigated the effects of point-wise magnetic impurities on the transport properties of helical edge states in the BHZ model using the Non-Equilibrium Green's Function formalism and compared the results to a semi-analytic approach. Using these techniques we study the influence of impurity strength and spin impurity polarization. We observe a secondary effect of defect-defect interaction that depends on the underlying material parameters which introduces a non-monotonic response of the conductance to defect density. This in turn suggests a qualitative difference in magneto-transport signatures in the dilute and high density spin impurity limits.
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Submitted 21 October, 2021;
originally announced October 2021.
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OPTIMADE, an API for exchanging materials data
Authors:
Casper W. Andersen,
Rickard Armiento,
Evgeny Blokhin,
Gareth J. Conduit,
Shyam Dwaraknath,
Matthew L. Evans,
Ádám Fekete,
Abhijith Gopakumar,
Saulius Gražulis,
Andrius Merkys,
Fawzi Mohamed,
Corey Oses,
Giovanni Pizzi,
Gian-Marco Rignanese,
Markus Scheidgen,
Leopold Talirz,
Cormac Toher,
Donald Winston,
Rossella Aversa,
Kamal Choudhary,
Pauline Colinet,
Stefano Curtarolo,
Davide Di Stefano,
Claudia Draxl,
Suleyman Er
, et al. (31 additional authors not shown)
Abstract:
The Open Databases Integration for Materials Design (OPTIMADE) consortium has designed a universal application programming interface (API) to make materials databases accessible and interoperable. We outline the first stable release of the specification, v1.0, which is already supported by many leading databases and several software packages. We illustrate the advantages of the OPTIMADE API throug…
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The Open Databases Integration for Materials Design (OPTIMADE) consortium has designed a universal application programming interface (API) to make materials databases accessible and interoperable. We outline the first stable release of the specification, v1.0, which is already supported by many leading databases and several software packages. We illustrate the advantages of the OPTIMADE API through worked examples on each of the public materials databases that support the full API specification.
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Submitted 25 August, 2021; v1 submitted 2 March, 2021;
originally announced March 2021.
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The effect of atomic structure on the electrical response of aluminium oxide tunnel junctions
Authors:
M. J. Cyster,
J. S. Smith,
J. A. Vaitkus,
N. Vogt,
S. P. Russo,
J. H. Cole
Abstract:
Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit parameters in these junctions are affected by the uniformity, morphology, and composition of the oxide barriers. To improve these circuits the effect of the atomic…
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Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit parameters in these junctions are affected by the uniformity, morphology, and composition of the oxide barriers. To improve these circuits the effect of the atomic structure on the electrical response of aluminium oxide barriers must be understood. We create three-dimensional atomistic models of aluminium oxide tunnel junctions and simulate their electronic transport properties with the non-equilibrium Green's function formalism. Increasing the oxide density is found to produce an exponential increase in the junction resistance. In highly oxygen-deficient junctions we observe metallic channels which decrease the resistance significantly. Computing the charge and current density within the junction shows how variation in the local potential landscape can create channels which dominate conduction. An atomistic approach provides a better understanding of these transport processes and guides the design of junctions for nanoelectronics applications.
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Submitted 29 May, 2019;
originally announced May 2019.
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Probing charge carrier movement in organic semiconductor thin films via nanowire conductance spectroscopy
Authors:
M. V. Klymenko,
J. A. Vaitkus,
J. H. Cole
Abstract:
Understanding the movement of charge within organic semiconducting films is crucial for applications in photo-voltaics and flexible electronics. We study the sensitivity of the electrical conductance of a silicon nanowire to changes of charge states within an organic semiconductor physisorbed on the surface of the nanowire. Elastic scattering caused by motion of charge carriers near the nanowire m…
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Understanding the movement of charge within organic semiconducting films is crucial for applications in photo-voltaics and flexible electronics. We study the sensitivity of the electrical conductance of a silicon nanowire to changes of charge states within an organic semiconductor physisorbed on the surface of the nanowire. Elastic scattering caused by motion of charge carriers near the nanowire modifies the mean-free path for backscattering of electrons propagating within it, which we have mathematically expressed in terms of the causal Green's functions. The scattering potential has been computed using a combination of the polarizable continuum model and density functional theory with the range-separated exchange-correlation functional for organic molecules and the semi-empirical tight-binding model for silicon. As an example, the sensitivity to charge state changes in tetracene is computed as a function of operating temperature and geometrical parameters of a nanowire. For a single molecule, ultra-thin silicon nanowires with characteristic sizes of the cross-section below 2 nm produce a detectable conductance change at room temperature. For larger nanowires the sensitivity is reduced, however the conductance change grows with the number of charged molecules: with sub-4 nm nanowires being sensitive enough to detect several tens of charge carriers. We propose using noise spectroscopy to access the temporal evolution of the charge states. Information regarding the spatial distribution of charge carries in organic thin films can be obtained using a grid of nanowire resistors and electric impedance tomography.
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Submitted 17 May, 2019;
originally announced May 2019.
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Büttiker probes and the Recursive Green's Function; an efficient approach to include dissipation in general configurations
Authors:
Jesse A. Vaitkus,
Jared H. Cole
Abstract:
An efficient and compact approach to the inclusion of dissipative effects in Non-Equilibrium Green's Function (NEGF) simulations of electronic systems is introduced. The algorithm is based on two well known methods in the literature, firstly that of the so-called Recursive Green's Function (RGF) and secondly that of Büttiker probes. Numerical methods for exact evaluation of the Jacobian are presen…
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An efficient and compact approach to the inclusion of dissipative effects in Non-Equilibrium Green's Function (NEGF) simulations of electronic systems is introduced. The algorithm is based on two well known methods in the literature, firstly that of the so-called Recursive Green's Function (RGF) and secondly that of Büttiker probes. Numerical methods for exact evaluation of the Jacobian are presented by a direct extension to RGF which can be modularly included in any codebase that uses it presently. Then using both physical observations and numerical methods, the computation time of the Büttiker probe Jacobian is improved significantly. An improvement to existing phonon models within Büttiker probes is then demonstrated in the simulation of fully atomistic graphene nanoribbon based field effect transistors in n-i-n and p-i-n operation.
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Submitted 19 December, 2017;
originally announced December 2017.
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Electronic transport in Si:P delta-doped wires
Authors:
J. S. Smith,
D. W. Drumm,
A. Budi,
J. A. Vaitkus,
J. H. Cole,
S. P. Russo
Abstract:
Despite the importance of Si:P delta-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a delta-doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transp…
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Despite the importance of Si:P delta-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a delta-doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transport model to calculate the current-voltage characteristics of a number of delta-doped wires, achieving good agreement with experiment. To motivate our transport model we have performed density-functional calculations for a variety of delta-doped wires, each with different donor configurations. These calculations also allow us to accurately define the electronic extent of a delta-doped wire, which we find to be at least 4.6 nm.
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Submitted 14 July, 2015;
originally announced July 2015.
