Showing 1–37 of 37 results for author: Urdampilleta, M

Broadband parametric amplification for multiplexed SiMOS quantum dot signals

Authors: Victor Elhomsy, Luca Planat, David J. Niegemann, Bruna Cardoso-Paz, Ali Badreldin, Bernhard Klemt, Vivien Thiney, Renan Lethiecq, Eric Eyraud, Matthieu C. Dartiailh, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Tristan Meunier, Nicolas Roch, Matias Urdampilleta

Abstract: Spins in semiconductor quantum dots hold great promise as building blocks of quantum processors. Trap** them in SiMOS transistor-like devices eases future industrial scale fabrication. Among the potentially scalable readout solutions, gate-based dispersive radiofrequency reflectometry only requires the already existing transistor gates to readout a quantum dot state, relieving the need for addit… ▽ More Spins in semiconductor quantum dots hold great promise as building blocks of quantum processors. Trap** them in SiMOS transistor-like devices eases future industrial scale fabrication. Among the potentially scalable readout solutions, gate-based dispersive radiofrequency reflectometry only requires the already existing transistor gates to readout a quantum dot state, relieving the need for additional elements. In this effort towards scalability, traveling-wave superconducting parametric amplifiers significantly enhance the readout signal-to-noise ratio (SNR) by reducing the noise below typical cryogenic low-noise amplifiers, while offering a broad amplification band, essential to multiplex the readout of multiple resonators. In this work, we demonstrate a 3GHz gate-based reflectometry readout of electron charge states trapped in quantum dots formed in SiMOS multi-gate devices, with SNR enhanced thanks to a Josephson traveling-wave parametric amplifier (JTWPA). The broad, tunable 2GHz amplification bandwidth combined with more than 10dB ON/OFF SNR improvement of the JTWPA enables frequency and time division multiplexed readout of interdot transitions, and noise performance near the quantum limit. In addition, owing to a design without superconducting loops and with a metallic ground plane, the JTWPA is flux insensitive and shows stable performances up to a magnetic field of 1.2T at the quantum dot device, compatible with standard SiMOS spin qubit experiments. △ Less

Submitted 2 August, 2023; v1 submitted 27 July, 2023; originally announced July 2023.

A new FDSOI spin qubit platform with 40nm effective control pitch

Authors: T. Bédécarrats, B. Cardoso Paz, B. Martinez Diaz, H. Niebojewski, B. Bertrand1, N. Rambal, C. Comboroure, A. Sarrazin, F. Boulard, E. Guyez, J. -M. Hartmann, Y. Morand, A. Magalhaes-Lucas, E. Nowak, E. Catapano, M. Cassé, M. Urdampilleta, Y. -M. Niquet, F. Gaillard, S. De Franceschi, T. Meunier, M. Vinet

Abstract: Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides… ▽ More Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides full controllability in 1D FDSOI QD arrays. The major advantages of this architecture are explored through numerical simulations. Functionality of the fabricated structure is validated via 300K statistical electrical characterization, while tunnel-coupling control is demonstrated at cryogenic temperature. △ Less

Submitted 7 April, 2023; originally announced April 2023.

Journal ref: 2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2021, pp. 1-4

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

Authors: Bernhard Klemt, Victor El-Homsy, Martin Nurizzo, Pierre Hamonic, Biel Martinez, Bruna Cardoso Paz, Cameron spence, Matthieu Dartiailh, Baptiste Jadot, Emmanuel Chanrion, Vivien Thiney, Renan Lethiecq, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta

Abstract: For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting… ▽ More For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting circuits can be added in a post-CMOS process to study the physics of these devices or achieve proof of concepts. Once the process is established it can be incorporated in the foundry-compatible process flow. Here, we study a single electron spin qubit in a CMOS device with a micromagnet integrated in the flexible BEOL. We exploit the synthetic spin orbit coupling (SOC) to control the qubit via electric field and we investigate the spin-valley physics in the presence of SOC where we show an enhancement of the Rabi frequency at the spin-valley hotspot. Finally, we probe the high frequency noise in the system using dynamical decoupling pulse sequences and demonstrate that charge noise dominates the qubit decoherence in this range. △ Less

Submitted 8 March, 2023; originally announced March 2023.

Comments: 11 pages, 10 figures

In-flight detection of few electrons using a singlet-triplet spin qubit

Authors: Vivien Thiney, Pierre-André Mortemousque, Konstantinos Rogdakis, Romain Thalineau, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Christopher Bäuerle, Tristan Meunier

Abstract: We investigate experimentally the capacitive coupling between a two-electron singlet-triplet spin qubit and flying electrons propagating in quantum Hall edge channels. After calibration of the spin qubit detector, we assess its charge sensibility and demonstrate experimentally the detection of less than five flying electrons with average measurement. This experiment demonstrates that the spin qubi… ▽ More We investigate experimentally the capacitive coupling between a two-electron singlet-triplet spin qubit and flying electrons propagating in quantum Hall edge channels. After calibration of the spin qubit detector, we assess its charge sensibility and demonstrate experimentally the detection of less than five flying electrons with average measurement. This experiment demonstrates that the spin qubit is an ultrasensitive and fast charge detector with the perspective of a future single shot-detection of a single flying electron. This work opens the route toward quantum electron optics experiments at the single electron level in semiconductor circuits. △ Less

Submitted 22 November, 2022; v1 submitted 17 October, 2022; originally announced October 2022.

Coulomb-mediated antibunching of an electron pair surfing on sound

Authors: Junliang Wang, Hermann Edlbauer, Aymeric Richard, Shunsuke Ota, Wanki Park, Jeongmin Shim, Arne Ludwig, Andreas Wieck, Heung-Sun Sim, Matias Urdampilleta, Tristan Meunier, Tetsuo Kodera, Nobu-Hisa Kaneko, Hermann Sellier, Xavier Waintal, Shintaro Takada, Christopher Bäuerle

Abstract: Electron flying qubits are envisioned as potential information link within a quantum computer, but also promise -- alike photonic approaches -- a self-standing quantum processing unit. In contrast to its photonic counterpart, electron-quantum-optics implementations are subject to Coulomb interaction, which provide a direct route to entangle the orbital or spin degree of freedom. However, the contr… ▽ More Electron flying qubits are envisioned as potential information link within a quantum computer, but also promise -- alike photonic approaches -- a self-standing quantum processing unit. In contrast to its photonic counterpart, electron-quantum-optics implementations are subject to Coulomb interaction, which provide a direct route to entangle the orbital or spin degree of freedom. However, the controlled interaction of flying electrons at the single particle level has not yet been established experimentally. Here we report antibunching of a pair of single electrons that is synchronously shuttled through a circuit of coupled quantum rails by means of a surface acoustic wave. The in-flight partitioning process exhibits a reciprocal gating effect which allows us to ascribe the observed repulsion predominantly to Coulomb interaction. Our single-shot experiment marks an important milestone on the route to realise a controlled-phase gate for in-flight quantum manipulations. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Journal ref: Nature Nanotechnology 18, 721-726 (2023)

Probing charge noise in few electron CMOS quantum dots

Authors: Cameron Spence, Bruna Cardoso-Paz, Vincent Michal, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Pierre-André Mortemousque, Bernhard Klemt, Vivien Thiney, Benoit Bertrand, Louis Hutin, Christopher Bäuerle, Franck Balestro, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta

Abstract: Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire. We probe the charge noise for different quantum dot c… ▽ More Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire. We probe the charge noise for different quantum dot configurations, finding that it is possible to tune the charge noise over two orders of magnitude, ranging from 1 ueV^2 to 100 ueV^2. In particular, we show that the top interface and the reservoirs are the main sources of charge noise and their effect can be mitigated by controlling the quantum dot extension. Additionally, we demonstrate a novel method for the measurement of the charge noise experienced by a quantum dot in the few electron regime. We measure a comparatively higher charge noise value of 40 ueV^2 at the first electron, and demonstrate that the charge noise is highly dependent on the electron occupancy of the quantum dot. △ Less

Submitted 5 September, 2022; originally announced September 2022.

Comments: 6 pages 5 figures, supplementary materials included

Complete readout of two-electron spin states in a double quantum dot

Authors: Martin Nurizzo, Baptiste Jadot, Pierre-André Mortemousque, Vivien Thiney, Emmanuel Chanrion, David Niegemann, Matthieu Dartiailh, Arne Ludwig, Andreas D. Wieck, Christopher Bäuerle, Matias Urdampilleta, Tristan Meunier

Abstract: We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single shot measurements using Pauli spin blockade and our ability to tune on fast timescales the detuning and the interdot tunnel coupling between the GHz and sub-Hz regime. A sequence of three distinct manipulations and measurement… ▽ More We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single shot measurements using Pauli spin blockade and our ability to tune on fast timescales the detuning and the interdot tunnel coupling between the GHz and sub-Hz regime. A sequence of three distinct manipulations and measurements allows establishing if the spins are in S, Tzero, Tplus or Tminus state. This work points at a procedure to reduce the overhead for spin readout, an important challenge for scaling up spin qubit platforms. △ Less

Submitted 1 September, 2022; originally announced September 2022.

Comments: 11 pages, 7 figures

Generation of a single-cycle acoustic pulse: a scalable solution for transport in single-electron circuits

Authors: Junliang Wang, Shunsuke Ota, Hermann Edlbauer, Baptiste Jadot, Pierre-André Mortemousque, Aymeric Richard, Yuma Okazaki, Shuji Nakamura, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Tristan Meunier, Tetsuo Kodera, Nobu-Hisa Kaneko, Shintaro Takada, Christopher Bäuerle

Abstract: The synthesis of single-cycle, compressed optical and microwave pulses sparked novel areas of fundamental research. In the field of acoustics, however, such a generation has not been introduced yet. For numerous applications, the large spatial extent of surface acoustic waves (SAW) causes unwanted perturbations and limits the accuracy of physical manipulations. Particularly, this restriction appli… ▽ More The synthesis of single-cycle, compressed optical and microwave pulses sparked novel areas of fundamental research. In the field of acoustics, however, such a generation has not been introduced yet. For numerous applications, the large spatial extent of surface acoustic waves (SAW) causes unwanted perturbations and limits the accuracy of physical manipulations. Particularly, this restriction applies to SAW-driven quantum experiments with single flying electrons, where extra modulation renders the exact position of the transported electron ambiguous and leads to undesired spin mixing. Here, we address this challenge by demonstrating single-shot chirp synthesis of a strongly compressed acoustic pulse. Employing this solitary SAW pulse to transport a single electron between distant quantum dots with an efficiency exceeding 99%, we show that chirp synthesis is competitive with regular transduction approaches. Performing a time-resolved investigation of the SAW-driven sending process, we outline the potential of the chirped SAW pulse to synchronize single-electron transport from many quantum-dot sources. By superimposing multiple pulses, we further point out the capability of chirp synthesis to generate arbitrary acoustic waveforms tailorable to a variety of (opto)nanomechanical applications. Our results shift the paradigm of compressed pulses to the field of acoustic phonons and pave the way for a SAW-driven platform of single-electron transport that is precise, synchronized, and scalable. △ Less

Submitted 31 July, 2022; originally announced August 2022.

Comments: To be published in Physical Review X

Journal ref: Phys. Rev. X 12, 031035 (2022)

Parity and singlet-triplet high fidelity readout in a silicon double quantum dot at 0.5 K

Authors: David J. Niegemann, Victor El-Homsy, Baptiste Jadot, Martin Nurizzo, Bruna Cardoso-Paz, Emmanuel Chanrion, Matthieu Dartiailh, Bernhard Klemt, Vivien Thiney, Christopher Bäuerle, Pierre-André Mortemousque, Benoit Bertrand, Heimanu Niebojewski, Maud Vinet, Franck Balestro, Tristan Meunier, Matias Urdampilleta

Abstract: We demonstrate singlet-triplet readout and parity readout allowing to distinguish T0 and the polarized triplet states. We achieve high fidelity spin readout with an average fidelity above $99.9\%$ for a readout time of $20~μ$s and $99\%$ for $4~μ$s at a temperature of $0.5~K$. We initialize a singlet state in a single dot with a fidelity higher than $99\%$ and separate the two electrons while keep… ▽ More We demonstrate singlet-triplet readout and parity readout allowing to distinguish T0 and the polarized triplet states. We achieve high fidelity spin readout with an average fidelity above $99.9\%$ for a readout time of $20~μ$s and $99\%$ for $4~μ$s at a temperature of $0.5~K$. We initialize a singlet state in a single dot with a fidelity higher than $99\%$ and separate the two electrons while kee** the same spin state with $a \approx 95.6\%$ fidelity. △ Less

Submitted 21 July, 2022; originally announced July 2022.

Comments: 13 pages, 12 figures

Controlled quantum dot array segmentation via a highly tunable interdot tunnel coupling

Authors: Martin Nurizzo, Baptiste Jadot, Pierre-André Mortemousque, Vivien Thiney, Emmanuel Chanrion, Matthieu Dartiailh, Arne Ludwig, Andreas D. Wieck, Christopher Bäuerle, Matias Urdampilleta, Tristan Meunier

Abstract: Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for develo** a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots parameters in larger and larger arrays which represents a complex challenge. Partitioning of the system with the help of the inter-dot tunnel barriers can lead to a simp… ▽ More Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for develo** a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots parameters in larger and larger arrays which represents a complex challenge. Partitioning of the system with the help of the inter-dot tunnel barriers can lead to a simplification for tuning and offers a protection against unwanted charge displacement. In a triple quantum dot system, we demonstrate a nanosecond control of the inter-dot tunnel rate permitting to reach the two extreme regimes, large GHz tunnel coupling and sub-Hz isolation between adjacent dots. We use this novel development to isolate a sub part of the array while performing charge displacement and readout in the rest of the system. The degree of control over the tunnel coupling achieved in a unit cell should motivate future protocol development for tuning, manipulation and readout including this capability. △ Less

Submitted 19 July, 2022; originally announced July 2022.

Comments: 10 pages, 8 figures

A single hole spin with enhanced coherence in natural silicon

Authors: N. Piot, B. Brun, V. Schmitt, S. Zihlmann, V. P. Michal, A. Apra, J. C. Abadillo-Uriel, X. Jehl, B. Bertrand, H. Niebojewski, L. Hutin, M. Vinet, M. Urdampilleta, T. Meunier, Y. -M. Niquet, R. Maurand, S. De Franceschi

Abstract: Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a… ▽ More Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 $μ$s, exceeding by an order of magnitude the best reported values for hole-spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin-orbit coupling in isotopically-purified silicon. This finding largely enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing. △ Less

Submitted 25 September, 2022; v1 submitted 21 January, 2022; originally announced January 2022.

Journal ref: Nature Nanotechnology 17, 1072-1077 (2022)

Spin echo from erbium implanted silicon

Authors: Mark A. Hughes, Naitik A. Panjwani, Matias Urdampilleta, Kevin P. Homewood, Ben Murdin, J. David Carey

Abstract: Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3x10^17 cm^3 and O to a concentration of 10^20 cm^3, the electron spin coherence time, T2, and the spin-lattice relaxation time, T1, were measured to be 7.5 ls and ~1 ms, respectively, at 5 K. The spin echo decay profil… ▽ More Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3x10^17 cm^3 and O to a concentration of 10^20 cm^3, the electron spin coherence time, T2, and the spin-lattice relaxation time, T1, were measured to be 7.5 ls and ~1 ms, respectively, at 5 K. The spin echo decay profile displayed strong modulation, which was consistent with the super-hyperfine interaction between Er3þ and a spin bath of 29Si nuclei. The calculated spectral diffusion time was similar to the measured T2, which indicated that T2 was limited by spectral diffusion due to T1-induced flips of neighboring Er3þ spins. The origin of the echo is an Er center surrounded by six O atoms with monoclinic C1h site symmetry. △ Less

Submitted 12 October, 2021; originally announced October 2021.

Comments: arXiv admin note: substantial text overlap with arXiv:2006.00225

Spin-valley coupling anisotropy and noise in CMOS quantum dots

Authors: Cameron Spence, Bruna Cardoso Paz, Bernhard Klemt, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Vivien Thiney, Benoit Bertrand, Heimanu Niebojewski, Pierre-André Mortemousque, Xavier Jehl, Romain Maurand, Silvano De Franceschi, Maud Vinet, Franck Balestro, Christopher Bäuerle, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta

Abstract: One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire devi… ▽ More One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire device with an integrated charge detector. We measure a valley splitting of 0.3 meV and 0.16 meV in two similar devices. The anisotropy of the spin-valley mixing is measured and shown to follow the dependence expected from the symmetry of the local confinement, indicating low disorder in the region of the quantum dot. Finally the charge noise in the spin-valley coupling regime is investigated and found to induce fluctuations in the qubit energy in the range of $0.6GHz/\sqrt{Hz}$. △ Less

Submitted 28 September, 2021; originally announced September 2021.

Comments: 4 figures

In-flight distribution of an electron within a surface acoustic wave

Authors: Hermann Edlbauer, Junliang Wang, Shunsuke Ota, Americ Richard, Baptiste Jadot, Pierre-André Mortemousque, Yuma Okazaki, Shuji Nakamura, Tetsuo Kodera, Nobu-Hisa Kaneko, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Tristan Meunier, Christopher Bäuerle, Shintaro Takada

Abstract: Surface acoustic waves (SAW) have large potential to realize quantum-optics-like experiments with single flying electrons employing their spin or charge degree of freedom. For such quantum applications, highly efficient trap** of the electron in a specific moving quantum dot (QD) of a SAW train plays a key role. Probabilistic transport over multiple moving minima would cause uncertainty in synch… ▽ More Surface acoustic waves (SAW) have large potential to realize quantum-optics-like experiments with single flying electrons employing their spin or charge degree of freedom. For such quantum applications, highly efficient trap** of the electron in a specific moving quantum dot (QD) of a SAW train plays a key role. Probabilistic transport over multiple moving minima would cause uncertainty in synchronisation that is detrimental for coherence of entangled flying electrons and in-flight quantum operations. It is thus of central importance to identify the device parameters enabling electron transport within a single SAW minimum. A detailed experimental investigation of this aspect is so far missing. Here we fill this gap by demonstrating time-of-flight measurements for a single electron that is transported via a SAW train between distant stationary QDs. Our measurements reveal the in-flight distribution of the electron within the moving acousto-electric quantum dots of the SAW train. Increasing the acousto-electric amplitude, we observe the threshold necessary to confine the flying electron at a specific, deliberately chosen SAW minimum. Investigating the effect of a barrier along the transport channel, we also benchmark the robustness of SAW-driven electron transport against stationary potential variations. Our results pave the way for highly controlled transport of electron qubits in a SAW-driven platform for quantum experiments. △ Less

Submitted 24 September, 2021; v1 submitted 20 July, 2021; originally announced July 2021.

Comments: Main paper: 11 pages, 3 figures, Supplementary material: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 119, 114004 (2021)

Enhanced spin coherence while displacing electron in a 2D array of quantum dots

Authors: Pierre-André Mortemousque, Baptiste Jadot, Emmanuel Chanrion, Vivien Thiney, Christopher Bäuerle, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Tristan Meunier

Abstract: The ability to shuttle coherently individual electron spins in arrays of quantum dots is a key procedure for the development of scalable quantum information platforms. It allows the use of sparsely populated electron spin arrays, envisioned to efficiently tackle the one- and two-qubit gate challenges. When the electrons are displaced in an array, they are submitted to site-dependent environment in… ▽ More The ability to shuttle coherently individual electron spins in arrays of quantum dots is a key procedure for the development of scalable quantum information platforms. It allows the use of sparsely populated electron spin arrays, envisioned to efficiently tackle the one- and two-qubit gate challenges. When the electrons are displaced in an array, they are submitted to site-dependent environment interactions such as hyperfine coupling with substrate nuclear spins. Here, we demonstrate that the electron multi-directional displacement in a $3\times 3$ array of tunnel coupled quantum dots enhances the spin coherence time via the motional narrowing phenomenon. More specifically, up to 10 configurations are explored by the electrons to study the impact of the displacement on spin dynamics. An increase of the coherence time by a factor up to 10 is observed in case of fast and repetitive displacement. The physical mechanism responsible for the loss of coherence induced by displacement is quantitatively captured by a simple model and its implications on spin coherence properties during the electron displacement are discussed in the context of large-scale quantum circuits. △ Less

Submitted 15 January, 2021; originally announced January 2021.

Comments: 8 pages, 5 figures, 6 supplementary figures

Journal ref: PRX Quantum 2, 030331 (2021)

Dispersively probed microwave spectroscopy of a silicon hole double quantum dot

Authors: Rami Ezzouch, Simon Zihlmann, Vincent P. Michal, **g Li, Agostino Aprá, Benoit Bertrand, Louis Hutin, Maud Vinet, Matias Urdampilleta, Tristan Meunier, Xavier Jehl, Yann-Michel Niquet, Marc Sanquer, Silvano De Franceschi, Romain Maurand

Abstract: Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layou… ▽ More Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layout are of primary importance. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. A first GHz-frequency tone drives electric-dipole spin resonance enabled by the valence-band spin-orbit coupling. A second lower-frequency tone (approximately 500 MHz) allows for dispersive readout via rf-gate reflectometry. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g-factors and tunnel/spin-orbit couplings for both even and odd occupation. △ Less

Submitted 28 January, 2021; v1 submitted 31 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. Applied 16, 034031 (2021)

Erbium implanted silicon for solid-state quantum technologies

Authors: Mark A. Hughes, Naitik A. Panjwani, Matias Urdampilleta, Nafsika Theodoropoulou, Ilana Wisby, Kevin P. Homewood, Ben Murdin, Tobias Lindström, J. David Carey

Abstract: Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is measured to be ~10 μs at 5 K and the spin echo decay profile displays strong modulation due to super-hyperfine interaction with 29Si nuclei. Three independent measur… ▽ More Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is measured to be ~10 μs at 5 K and the spin echo decay profile displays strong modulation due to super-hyperfine interaction with 29Si nuclei. Three independent measurements: temperature quenching of photoluminescence (PL), PL lifetime and photo-illuminated electron spin resonance (ESR) all indicate the presence of a previously unreported Er related defect state which can facilitate non-radiative relaxation from the Er exited state. This gives an energy level scheme analogous to that of the diamond NV centre, and implies that optical spin polarisation of the Zeeman ground state and high temperature operation of Er qubits in Er implanted Si may be feasible. The collective coupling strength between a superconducting NbN lumped-element microresonator and Er implanted Si with an Er concentration of 1017 cm-3 at 20 mK was ~ 1 MHz. △ Less

Submitted 27 August, 2020; v1 submitted 30 May, 2020; originally announced June 2020.

Distant spin entanglement via fast and coherent electron shuttling

Authors: Baptiste Jadot, Pierre-André Mortemousque, Emmanuel Chanrion, Vivien Thiney, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Christopher Bäuerle, Tristan Meunier

Abstract: In the quest for large-scale quantum computing, networked quantum computers offer a natural path towards scalability. Now that nearest neighbor entanglement has been demonstrated for electron spin qubits in semiconductors, on-chip long distance entanglement brings versatility to connect quantum core units. Here we realize the controlled and coherent transfer of a pair of entangled electron spins,… ▽ More In the quest for large-scale quantum computing, networked quantum computers offer a natural path towards scalability. Now that nearest neighbor entanglement has been demonstrated for electron spin qubits in semiconductors, on-chip long distance entanglement brings versatility to connect quantum core units. Here we realize the controlled and coherent transfer of a pair of entangled electron spins, and demonstrate their remote entanglement when separated by a distance of 6 microns. Driven by coherent spin rotations induced by the electron displacement, high-contrast spin quantum interferences are observed and are a signature of the preservation of the entanglement all along the displacement procedure. This work opens the route towards fast on-chip deterministic interconnection of remote quantum bits in semiconductor quantum circuits. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Comments: Main text of 7 pages with 4 figures. Supplementary information of 4 pages with 3 figures

Journal ref: Nature Nanotechnology (2021)

Charge detection in an array of CMOS quantum dots

Authors: Emmanuel Chanrion, David J. Niegemann, Benoit Bertrand, Cameron Spence, Baptiste Jadot, **g Li, Pierre-André Mortemousque, Louis Hutin, Romain Maurand, Xavier Jehl, Marc Sanquer, Silvano De Franceschi, Christopher Bäuerle, Franck Balestro, Yann-Michel Niquet, Maud Vinet, Tristan Meunier, Matias Urdampilleta

Abstract: The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state an… ▽ More The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state and readout spins through spin-to-charge conversion mechanisms. In this paper, we use two methods based on either a single-lead charge detector, or a reprogrammable single electron transistor. Thanks to these methods, we study the charge dynamics and sensitivity by performing single shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots. △ Less

Submitted 3 April, 2020; v1 submitted 2 April, 2020; originally announced April 2020.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. Applied 14, 024066 (2020)

All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Authors: Léo Bourdet, Louis Hutin, Benoit Bertrand, Andrea Corna, Heorhii Bohuslavskyi, Anthony Amisse, Alessandro Crippa, Romain Maurand, Sylvain Barraud, Matias Urdampilleta, Christopher Bäuerle, Tristan Meunier, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Yann-Michel Niquet, Maud Vinet

Abstract: We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valle… ▽ More We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the trade-off between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Comments: arXiv admin note: substantial text overlap with arXiv:1912.09806

Journal ref: IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 11 , Nov. 2018 )

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

Authors: L. Hutin, B. Bertrand, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T. -Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y. -M. Niquet, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet

Abstract: We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent qua… ▽ More We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundrycompatible Si MOS spin qubits. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2019 IEEE International Electron Devices Meeting (IEDM)

Towards scalable silicon quantum computing

Authors: M. Vinet, L. Hutin, B. Bertrand, S. Barraud, J. -M. Hartmann, Y. -J. Kim, V. Mazzocchi, A. Amisse, H. Bohuslavskyi, L. Bourdet, A. Crippa, X. Jehl, R. Maurand, Y. -M. Niquet, M. Sanquer, B. Venitucci, B. Jadot, E. Chanrion, P. -A. Mortemousque, C. Spence, M. Urdampilleta, S. De Franceschi, T. Meunier

Abstract: We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures. We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2018 IEEE International Electron Devices Meeting (IEDM)

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Authors: L. Hutin, L. Bourdet, B. Bertrand, A. Corna, H. Bohuslavskyi, A. Amisse, A. Crippa, R. Maurand, S. Barraud, M. Urdampilleta, C. Bäuerle, T. Meunier, M. Sanquer, X. Jehl, S. De Franceschi, Y. -M. Niquet, M. Vinet

Abstract: We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected config… ▽ More We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2018 IEEE Symposium on VLSI Technology

A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation

Authors: Theodor Lundberg, **g Li, Louis Hutin, Benoit Bertrand, David J. Ibberson, Chang-Min Lee, David J. Niegemann, Matias Urdampilleta, Nadia Stelmashenko, Tristan Meunier, Jason W. A. Robinson, Lisa Ibberson, Maud Vinet, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba

Abstract: Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in-situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quan… ▽ More Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in-situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quantum dots, accurately identifying when singlet-triplet blockade occurs is hence of major importance for scalable qubit readout. In this work, we present a description of spin blockade physics in a tunnel-coupled silicon double quantum dot defined in the corners of a split-gate transistor. Using gate-based magnetospectroscopy, we report successive steps of spin blockade and spin blockade lifting involving spin states with total spin angular momentum up to $S=3$. More particularly, we report the formation of a hybridized spin quintet state and show triplet-quintet and quintet-septet spin blockade. This enables studies of the quintet relaxation dynamics from which we find $T_1 \sim 4 ~μs$. Finally, we develop a quantum capacitance model that can be applied generally to reconstruct the energy spectrum of a double quantum dot including the spin-dependent tunnel couplings and the energy splitting between different spin manifolds. Our results open for the possibility of using Si CMOS quantum dots as a tuneable platform for studying high-spin systems. △ Less

Submitted 22 October, 2019; originally announced October 2019.

Comments: 7 pages, 3 figures

Journal ref: Phys. Rev. X 10, 041010 (2020)

Sound-driven single-electron transfer in a circuit of coupled quantum rails

Authors: Shintaro Takada, Hermann Edlbauer, Hugo V. Lepage, Junliang Wang, Pierre-André Mortemousque, Giorgos Georgiou, Crispin H. W. Barnes, Chris J. B. Ford, Mingyun Yuan, Paulo V. Santos, Xavier Waintal, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Tristan Meunier, Christopher Bäuerle

Abstract: Surface acoustic waves (SAWs) strongly modulate the shallow electric potential in piezoelectric materials. In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer individual electrons between distant quantum dots. This transfer mechanism makes SAW technologies a promising candidate to convey quantum information through a circuit of quantum logic gates. Here we… ▽ More Surface acoustic waves (SAWs) strongly modulate the shallow electric potential in piezoelectric materials. In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer individual electrons between distant quantum dots. This transfer mechanism makes SAW technologies a promising candidate to convey quantum information through a circuit of quantum logic gates. Here we present two essential building blocks of such a SAW-driven quantum circuit. First, we implement a directional coupler allowing to partition a flying electron arbitrarily into two paths of transportation. Second, we demonstrate a triggered single-electron source enabling synchronisation of the SAW-driven sending process. Exceeding a single-shot transfer efficiency of 99 %, we show that a SAW-driven integrated circuit is feasible with single electrons on a large scale. Our results pave the way to perform quantum logic operations with flying electron qubits. △ Less

Submitted 23 September, 2019; v1 submitted 2 March, 2019; originally announced March 2019.

Comments: Accepted for Publication in Nature Communications

Journal ref: Nature Communications 10, 4557 (2019)

Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Authors: A. Crippa, R. Ezzouch, A. Aprá, A. Amisse, L. Houtin, B. Bertrand, M. Vinet, M. Urdampilleta, T. Meunier, M. Sanquer, X. Jehl, R. Maurand, S. De Franceschi

Abstract: Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using i… ▽ More Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1\,K. △ Less

Submitted 2 July, 2019; v1 submitted 11 November, 2018; originally announced November 2018.

Journal ref: Nature Communications 10, 2776 (2019)

Gate-Based High Fidelity Spin Read-out in a CMOS Device

Authors: Matias Urdampilleta, David J. Niegemann, Emmanuel Chanrion, Baptiste Jadot, Cameron Spence, Pierre-André Mortemousque, 1 Christopher Bäuerle, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Romain Maurand, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Tristan Meunier

Abstract: The engineering of electron spin qubits in a compact unit cell embedding all quantum functionalities is mandatory for large scale integration. In particular, the development of a high-fidelity and scalable spin readout method remains an open challenge. Here we demonstrate high-fidelity and robust spin readout based on gate reflectometry in a CMOS device comprising one qubit dot and one ancillary d… ▽ More The engineering of electron spin qubits in a compact unit cell embedding all quantum functionalities is mandatory for large scale integration. In particular, the development of a high-fidelity and scalable spin readout method remains an open challenge. Here we demonstrate high-fidelity and robust spin readout based on gate reflectometry in a CMOS device comprising one qubit dot and one ancillary dot coupled to an electron reservoir to perform readout. This scalable method allows us to read out a spin with a fidelity above 99% for 1 ms integration time. To achieve such fidelity, we exploit a latched spin blockade mechanism that requires electron exchange between the ancillary dot and the reservoir. We show that the demonstrated high read-out fidelity is fully preserved up to 0.5 K. This results holds particular relevance for the future co-integration of spin qubits and classical control electronics. △ Less

Submitted 12 September, 2018; originally announced September 2018.

Comments: 6 pages, 4 figures

Coherent control of individual electron spins in a two dimensional array of quantum dots

Authors: Pierre-Andre Mortemousque, Emmanuel Chanrion, Baptiste Jadot, Hanno Flentje, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Christopher Bauerle, Tristan Meunier

Abstract: The ability to manipulate coherently individual quantum objects organized in arrays is a prerequisite to any scalable quantum information platform. For electron spin qubits, it requires the fine tuning of large arrays of tunnel-coupled quantum dots. The cumulated efforts in linear dot arrays have permitted the recent realization of quantum simulators and multi-electron spin coherent manipulation.… ▽ More The ability to manipulate coherently individual quantum objects organized in arrays is a prerequisite to any scalable quantum information platform. For electron spin qubits, it requires the fine tuning of large arrays of tunnel-coupled quantum dots. The cumulated efforts in linear dot arrays have permitted the recent realization of quantum simulators and multi-electron spin coherent manipulation. However, the two-dimensional scaling of such implementations remains undemonstrated while being compulsory to resolve complex quantum matter problems or process quantum information. Here, we demonstrate the two-dimensional coherent control of individual electron spins in a 3x3 array of tunnel-coupled quantum dots. More specifically, we focus on several key quantum functionalities of such control: charge deterministic displacement, local spin readout, local coherent exchange manipulation between two electron spins trapped in adjacent dots, and coherent multi-directional spin shuttling over distances of several microns. This work lays the foundations for exploiting a two-dimensional array of electron spins for quantum simulation and information processing. △ Less

Submitted 19 August, 2018; originally announced August 2018.

Unveiling the bosonic nature of an ultrashort few-electron pulse

Authors: Gregoire Roussely, Everton Arrighi, Giorgos Georgiou, Shintaro Takada, Martin Schalk, Matias Urdampilleta, Arne Ludwig, Andreas D. Wieck, Pacome Armagnat, Thomas Kloss, Xavier Waintal, Tristan Meunier, Christopher Bauerle

Abstract: Quantum dynamics is very sensitive to dimensionality. While two-dimensional electronic systems form Fermi liquids, one-dimensional systems -- Tomonaga-Luttinger liquids -- are described by purely bosonic excitations, even though they are initially made of fermions. With the advent of coherent single-electron sources, the quantum dynamics of such a liquid is now accessible at the single-electron le… ▽ More Quantum dynamics is very sensitive to dimensionality. While two-dimensional electronic systems form Fermi liquids, one-dimensional systems -- Tomonaga-Luttinger liquids -- are described by purely bosonic excitations, even though they are initially made of fermions. With the advent of coherent single-electron sources, the quantum dynamics of such a liquid is now accessible at the single-electron level. Here, we report on time-of-flight measurements of ultrashort few-electron charge pulses injected into a quasi one-dimensional quantum conductor. By changing the confinement potential we can tune the system from the one-dimensional Tomonaga-Luttinger liquid limit to the multi-channel Fermi liquid and show that the plasmon velocity can be varied over almost an order of magnitude. These results are in quantitative agreement with a parameter-free theory and demonstrate a powerful new probe for directly investigating real-time dynamics of fractionalisation phenomena in low-dimensional conductors. △ Less

Submitted 11 September, 2018; v1 submitted 9 November, 2017; originally announced November 2017.

Comments: In v2 we added 11 pages of Supplementary Information. In v3 we updated the manuscript after it was peer-reviewed and published

Journal ref: Nature Communications Volume 9, Article number: 2811 (2018)

Molecule-based microelectromechanical sensors

Authors: Matias Urdampilleta, Pierre-Henri Ducrot, Daniel Rosario-Amorin, Abhishake Mondal, Mathieu Rouzières, Pierre Dechambenoit, Corine Mathonière, Fabrice Mathieu, Isabelle Dufour, Cédric Ayela, Rodolphe Clérac

Abstract: Incorporating functional molecules into sensor devices is an emerging field in molecular electronics that aims at exploiting the sensitivity of different molecules to their environment and turning it into an electrical signal. Among the emergent sensors, microelectromechanical systems are promising for their extreme sensitivity to mechanical events. However, in order to bring new functions to thes… ▽ More Incorporating functional molecules into sensor devices is an emerging field in molecular electronics that aims at exploiting the sensitivity of different molecules to their environment and turning it into an electrical signal. Among the emergent sensors, microelectromechanical systems are promising for their extreme sensitivity to mechanical events. However, in order to bring new functions to these devices, the functionalization of their surface with multifunctional molecules is required. Herein, we present original hybrid devices made of an integrated polymer microelectromechanical resonator functionalized with switchable magnetic molecules. The change of their mechanical properties and geometry induced by the switching of their magnetic state at a molecular level alters the device dynamical behavior, resulting in a change of the resonance frequency. We demonstrate that the device can be operated to sense light or thermal excitation. Moreover, thanks to the collective interaction of the switchable molecules, the device behaves as a nonvolatile memory. Our results open up broad prospects of new flexible photo and thermoactive hybrid devices for molecule based data storage and sensors. △ Less

Submitted 7 February, 2017; v1 submitted 5 January, 2017; originally announced January 2017.

Comments: 13 pages 3 figures and supporting informations

Magnetic Tetrastability in a Spin Chain

Authors: Vivien Pianet, Matias Urdampilleta, Thierry Colin, Rodolphe Clérac, Claude Coulon

Abstract: Bistability in magnetism has been extensively used, in particular to store information. Here we propose an alternative route by using tetrastable magnetic domains. Using numerical and analytical calculations we show that a spin chain with a canting angle of π/4 possesses four energy-equivalent states. We discuss the static properties of such chain such as the profile and the energy of the domain w… ▽ More Bistability in magnetism has been extensively used, in particular to store information. Here we propose an alternative route by using tetrastable magnetic domains. Using numerical and analytical calculations we show that a spin chain with a canting angle of π/4 possesses four energy-equivalent states. We discuss the static properties of such chain such as the profile and the energy of the domain walls as they govern the relaxation of the magnetization. The realisation of such spin chain could enable the encoding of the information on four bits which is a potential alternative toward the increase of storage density. △ Less

Submitted 14 April, 2016; originally announced April 2016.

Comments: 4 pages, 5 figures, supplementary material available

Journal ref: Phys. Rev. B 94, 054431 (2016)

Charge dynamics and spin blockade in a hybrid double quantum dot in silicon

Authors: M. Urdampilleta, A. Chatterjee, C. C. Lo, T. Kobayashi, J. Mansir, S. Barraud, A. C. Betz, S. Rogge, M. F. Gonzalez-Zalba, J. J. L. Morton

Abstract: Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfin… ▽ More Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability and scalability. Here we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterise the charge dynamics, which reveals a charge T2* of 200 ps and a relaxation time T1 of 100 ns. Additionally, we demonstrate spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus. △ Less

Submitted 19 March, 2015; v1 submitted 3 March, 2015; originally announced March 2015.

Comments: 6 pages, 4 figures, supplementary information (3 pages, 4 figures)

Journal ref: Phys. Rev. X 5, 031024 (2015)

Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon

Authors: C. C. Lo, M. Urdampilleta, P. Ross, M. F. Gonzalez-Zalba, J. Mansir, S. A. Lyon, M. L. W. Thewalt, J. J. L. Morton

Abstract: Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing. For electron spins bound to shallow donors in silicon, bulk electrically-detected magnetic resonance has relied on coupling to spin readout partners such as pa… ▽ More Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing. For electron spins bound to shallow donors in silicon, bulk electrically-detected magnetic resonance has relied on coupling to spin readout partners such as paramagnetic defects or conduction electrons which fundamentally limits spin coherence times. Here we demonstrate electrical detection of phosphorus donor electron spin resonance by transport through a silicon device, using optically-driven donor-bound exciton transitions. We use this method to measure electron spin Rabi oscillations, and, by avoiding use of an ancillary spin for readout, we are able to obtain long intrinsic electron spin coherence times, limited only by the donor concentration. We go on to experimentally address critical issues for adopting this scheme for single spin measurement in silicon nanodevices, including the effects of strain, electric fields, and non-resonant excitation. This lays the foundations for realising a versatile readout method for single spin readout with relaxed magnetic field and temperature requirements compared with spin-dependent tunneling. △ Less

Submitted 5 November, 2014; originally announced November 2014.

Comments: 13 pages, 4 figures

Hyperfine Stark effect of shallow donors in silicon

Authors: G. Pica, G. Wolfowicz, M. Urdampilleta, M. L. W. Thewalt, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, J. J. L. Morton, R. N. Bhatt, S. A. Lyon, B. W. Lovett

Abstract: We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. V… ▽ More We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. Variational optimization of the 1s donor binding energies calculated with a new trial wave function, in a pseudopotential with two fitting parameters, allows an accurate match of the experimentally determined donor energy levels, while the correct limiting behavior for the electronic density, both close to and far from each impurity nucleus, is captured by fitting the measured contact hyperfine coupling between the donor nuclear and electron spin. We go on to include an external uniform electric field in order to model Stark physics: With no extra ad hoc parameters, variational minimization of the complete donor ground energy allows a quantitative description of the field-induced reduction of electronic density at each impurity nucleus. Detailed comparisons with experimental values for the shifts of the contact hyperfine coupling reveal very close agreement for all the donors measured (P, As, Sb and Bi). Finally, we estimate field ionization thresholds for the donor ground states, thus setting upper limits to the gate manipulation times for single qubit operations in Kane-like architectures: the Si:Bi system is shown to allow for A gates as fast as around 10 MHz. △ Less

Submitted 19 August, 2014; originally announced August 2014.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. B 90 195204 (2014)

Conditional control of donor nuclear spins in silicon using Stark shifts

Authors: Gary Wolfowicz, Matias Urdampilleta, Mike L. W. Thewalt, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, John J. L. Morton

Abstract: Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear spin. We present a technique based on dynamic decoupling of the electron spin to accurately determine the Stark shift, and illustrate this using antimony donors… ▽ More Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear spin. We present a technique based on dynamic decoupling of the electron spin to accurately determine the Stark shift, and illustrate this using antimony donors in isotopically purified silicon-28. We then demonstrate two different methods to use a DC electric field combined with an applied resonant radio-frequency (RF) field to conditionally control donor nuclear spins. The first method combines an electric-field induced conditional phase gate with standard RF pulses, and the second one simply detunes the spins off-resonance. Finally, we consider different strategies to reduce the effect of electric field inhomogeneities and obtain above 90% process fidelities. △ Less

Submitted 28 May, 2014; originally announced May 2014.

Comments: 5 pages, 4 figures, 1 supplementary information

Landau-Zener tunneling of a single Tb3+ magnetic moment allowing the electronic read-out of a nuclear spin

Authors: Matias Urdampilleta, Svetlana Klyatskaya, Mario Ruben, Wolfgang Wernsdorfer

Abstract: A multi-terminal device based on a carbon nanotube quantum dot was used at very low tem- perature to probe a single electronic and nuclear spin embedded in a bis-phthalocyanine Terbium (III) complex (TbPc2). A spin-valve signature with large conductance jumps was found when two molecules were strongly coupled to the nanotube. The application of a transverse field separated the magnetic signal of b… ▽ More A multi-terminal device based on a carbon nanotube quantum dot was used at very low tem- perature to probe a single electronic and nuclear spin embedded in a bis-phthalocyanine Terbium (III) complex (TbPc2). A spin-valve signature with large conductance jumps was found when two molecules were strongly coupled to the nanotube. The application of a transverse field separated the magnetic signal of both molecules and enabled single-shot read-out of the Terbium nuclear spin. The Landau-Zener (LZ) quantum tunneling probability was studied as a function of field sweep rate, establishing a good agreement with the LZ equation and yielding the tunnel splitting Δ. It was found that ? increased linearly as a function of the transverse field. These studies are an essential prerequisite for the coherent manipulation of a single nuclear spin in TbPc2. △ Less

Submitted 24 April, 2013; originally announced April 2013.

Comments: 7 pages, 6 figures, to appear in PRB

Supramolecular Spin Valves

Authors: Matias Urdampilleta, Svetlana Klyatskaya, Jean-Pierre Cleuziou, Mario Ruben, Wolfgang Wernsdorfer

Abstract: Magnetic molecules possess a high potential as building blocks for the design of spintronic devices. Moreover, the use of molecular materials opens the way for the controlled use of bottom-up, e.g. supramolecular, processing techniques combining massively parallel self-fabrication with conventional top-down nanostructuring techniques. The development of solid state spintronic devices based on the… ▽ More Magnetic molecules possess a high potential as building blocks for the design of spintronic devices. Moreover, the use of molecular materials opens the way for the controlled use of bottom-up, e.g. supramolecular, processing techniques combining massively parallel self-fabrication with conventional top-down nanostructuring techniques. The development of solid state spintronic devices based on the giant magnetoresistance (GMR), tunnel magnetoresistance (TMR), and spin valve effects has revolutionized the field of magnetic memory applications. Recently, organic semiconductors were inserted into nanometer sized tunnel junctions allowing enhancement of spin reversal, giant magneto-resistance behaviour was observed in single non-magnetic molecules coupled to magnetic electrodes, and the use of the quantum tunnelling properties of single-molecule magnets (SMMs) in hybrid devices was proposed. Herein, we present an original device in which a non-magnetic molecular quantum dot, made of a single-wall carbon nanotube (SWCNT) contacted with non-magnetic electrodes, is laterally coupled via supramolecular interactions to a TbPc2-SMM (Pc = phthalocyanine), which provides a localized magnetic moment. The conductance through the SWCNT is modulated by swee** the magnetic field, exhibiting magnetoresistance ratios up to 300% between fully polarized and non-polarized SMMs below 1 K. We thus demonstrate the functionality of a supramolecular spin valve without magnetic leads. Our results open up prospects of circuit-integration and implementation of new device capabilities. △ Less

Submitted 24 April, 2013; originally announced April 2013.

Comments: 12 pages, 3 figures

Journal ref: Nature Materials 10, 502, 2011