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Multiple polarization orders in individual twinned colloidal nanocrystals of centrosymmetric HfO2
Authors:
Hongchu Du,
Christoph Groh,
Chun-Lin Jia,
Thorsten Ohlerth,
Knut W. Urban,
Rafal E. Dunin-Borkowski,
Ulrich Simon,
Joachim Mayer
Abstract:
Spontaneous polarization is essential for ferroelectric functionality in non-centrosymmetric crystals. High-integration-density ferroelectric devices require the stabilization of ferroelectric polarization in small volumes. Here, atomic-resolution transmission electron microscopy imaging reveals that twinning-induced symmetry breaking in colloidal nanocrystals of centrosymmetric HfO2 leads to the…
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Spontaneous polarization is essential for ferroelectric functionality in non-centrosymmetric crystals. High-integration-density ferroelectric devices require the stabilization of ferroelectric polarization in small volumes. Here, atomic-resolution transmission electron microscopy imaging reveals that twinning-induced symmetry breaking in colloidal nanocrystals of centrosymmetric HfO2 leads to the formation of multiple polarization orders, which are associated with sub-nanometer ferroelectric and antiferroelectric phases. The minimum size limit of the ferroelectric phase is found to be ~4 nm3. Density functional theory calculations indicate that transformations between the ferroelectric and antiferroelectric phases can be modulated by lattice strain and are energetically possible in either direction. The results of this work provide a route towards applications of HfO2 nanocrystals in information storage at densities that are more than an order of magnitude higher than the scaling limit defined by the nanocrystal size.
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Submitted 27 September, 2020;
originally announced September 2020.
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Solution Monolayer Epitaxy for Tunable Atomically Sharp Oxide Interfaces
Authors:
A. Ron,
A. Hevroni,
E. Maniv,
M. Mograbi,
L. **,
C. -L. Jia,
K. W. Urban,
G. Markovich,
Y. Dagan
Abstract:
Epitaxial growth of atomically-sharp interfaces serves as one of the main building blocks of nanofabrication. Such interfaces are crucial for the operation of various devices including transistors, photo-voltaic cells, and memory components. In order to avoid charge traps that may hamper the operation of such devices, it is critical for the layers to be atomically-sharp. Fabrication of atomically…
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Epitaxial growth of atomically-sharp interfaces serves as one of the main building blocks of nanofabrication. Such interfaces are crucial for the operation of various devices including transistors, photo-voltaic cells, and memory components. In order to avoid charge traps that may hamper the operation of such devices, it is critical for the layers to be atomically-sharp. Fabrication of atomically sharp interfaces normally requires ultra-high vacuum techniques and high substrate temperatures. We present here a new self-limiting wet chemical process for deposition of epitaxial layers from alkoxide precursors. This method is fast, cheap, and yields perfect interfaces as we validate by various analysis techniques. It allows the design of heterostructures with half-unit cell resolution. We demonstrate our method by designing hole-type oxide interfaces SrTiO3/BaO/LaAlO3. We show that transport through this interface exhibits properties of mixed electron-hole contributions with hole mobility exceeding that of electrons. Our method and results are an important step forward towards a controllable design of a p-type oxide interface.
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Submitted 11 October, 2017;
originally announced October 2017.
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Anomalous NMR response of quasicrystalline icosahedral A_{72.4}Pd_{20.5}Mn_{7.1} at low temperatures
Authors:
J. L. Gavilano,
D. Rau,
Sh. Mushkolaj,
H. R. Ott,
J. Dolinsek,
K. Urban
Abstract:
We report the observation of an anomalous {27}Al-NMR response of a single grain Al_{72.4}Pd_{20.5}Mn_{7.1} icosahedral quasicrystal at low temperatures. In an external magnetic field of
6 T and upon decreasing temperature, we observe a sharp 100 % increase of the resonance linewidth at 2.5 K. No further changes of the linewidth are observed down to 0.05 K. The linewidth enhancement is accompani…
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We report the observation of an anomalous {27}Al-NMR response of a single grain Al_{72.4}Pd_{20.5}Mn_{7.1} icosahedral quasicrystal at low temperatures. In an external magnetic field of
6 T and upon decreasing temperature, we observe a sharp 100 % increase of the resonance linewidth at 2.5 K. No further changes of the linewidth are observed down to 0.05 K. The linewidth enhancement is accompanied by a small but distinct increase of the spin-lattice relaxation rate T_{1}^{-1} and by a maximum of the spin-spin relaxation time T_{2}(T). All these anomalies are absent in external fields of 2.5 T and below. Our observations indicate unusual variations in the stability of isolated magnetic moments in a quasiperiodic metallic environment.
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Submitted 21 June, 2001;
originally announced June 2001.
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Symmetric Versus Nonsymmetric Structure of the Phosphorus Vacancy on InP(110)
Authors:
Ph. Ebert,
K. Urban,
L. Aballe,
C. H. Chen,
K. Horn,
G. Schwarz,
J. Neugebauer,
M. Scheffler
Abstract:
The atomic and electronic structure of positively charged P vacancies on InP(110) surfaces is determined by combining scanning tunneling microscopy, photoelectron spectroscopy, and density-functional theory calculations. The vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge transfer level 0.75+-0.1 eV above the valence band maximum. The scanning tunneling microscopy (ST…
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The atomic and electronic structure of positively charged P vacancies on InP(110) surfaces is determined by combining scanning tunneling microscopy, photoelectron spectroscopy, and density-functional theory calculations. The vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge transfer level 0.75+-0.1 eV above the valence band maximum. The scanning tunneling microscopy (STM) images show only a time average of two degenerate geometries, due to a thermal flip motion between the mirror configurations. This leads to an apparently symmetric STM image, although the ground state atomic structure is nonsymmetric.
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Submitted 8 June, 2000;
originally announced June 2000.
