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Enhanced Electron Extraction in Co-Doped TiO2 Quantified by Drift-Diffusion Simulation for Stable CsPbI3 Solar Cells
Authors:
Thomas W. Gries,
Davide Regaldo,
Hans Koebler,
Titan Noor Hartono Putri,
Gennaro V. Sannino,
Emilio Gutierrez Partida,
Roberto Felix,
Elif Huesam,
Ahmed Saleh,
Regan G. Wilks,
Zafar Iqbal,
Zahra Loghman Nia,
Florian Ruske,
Martin Stolterfoht,
Dieter Neher,
Marcus Baer,
Stefan A. Weber,
Paola Delli Veneri,
Philip Schulz,
Jean-Baptiste Puel,
Jean-Paul Kleider,
Qiong Wang,
Eva Unger,
Artem Musiienko,
Antonio Abate
Abstract:
Solar cells based on inorganic perovskite CsPbI3 are promising candidates to resolve the challenge of operational stability in the field of perovskite photovoltaics. For stable operation, however, it is crucial to thoroughly understand the extractive and recombinative processes occurring at the interfaces of perovskite and the charge-selective layers. In this study, we focus on the electronic prop…
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Solar cells based on inorganic perovskite CsPbI3 are promising candidates to resolve the challenge of operational stability in the field of perovskite photovoltaics. For stable operation, however, it is crucial to thoroughly understand the extractive and recombinative processes occurring at the interfaces of perovskite and the charge-selective layers. In this study, we focus on the electronic properties of (doped) TiO2 as an electron-selective contact. We show via KPFM that co-do** of TiO2 with Nb(V) and Sn(IV) reduces the materials work function by 270 meV, giving it stronger n-type characteristics compared to Nb(V) mono-doped TiO2. The altered electronic alignment with CsPbI3 translates to enhanced electron extraction, as demonstrated with ssPL, trPL and trSPV in triad. Importantly, we extract crucial parameters, such as the concentration of extracted electrons and the interface hole recombination velocity, from the SPV transients via 2D drift-diffusion simulations. When implementing the co-doped TiO2 into full n-i-p solar cells, the operational stability is enhanced to 32000 h of projected TS80 lifetime. This study provides fundamental understanding of interfacial charge extraction and its correlation with operational stability of perovskite solar cells, which can be transferred to other charge-selective contacts.
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Submitted 24 April, 2024; v1 submitted 18 March, 2024;
originally announced March 2024.
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Multi-Stage Phase-Segregation of Mixed Halide Perovskites under Illumination: A Quantitative Comparison of Experimental Observations and Thermodynamic Models
Authors:
Klara Suchan,
Justus Just,
Pascal Becker,
Carolin Rehermann,
Aboma Merdasa,
Roland Mainz,
Ivan G. Scheblykin,
Eva Unger
Abstract:
Photo- and charge-carrier induced ion migration is a major challenge when utilizing metal halide perovskite semiconductors for optoelectronic applications. For mixed iodide/bromide perovskites, the compositional instability due to light- or electrical bias induced phase- segregation restricts the exploitation of the entire bandgap range. Previous experimental and theoretical work suggests that exc…
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Photo- and charge-carrier induced ion migration is a major challenge when utilizing metal halide perovskite semiconductors for optoelectronic applications. For mixed iodide/bromide perovskites, the compositional instability due to light- or electrical bias induced phase- segregation restricts the exploitation of the entire bandgap range. Previous experimental and theoretical work suggests that excited states or charge-carriers trigger the process but the exact mechanism is still under debate. To identify the mechanism and cause of light-induced phase-segregation phenomena we investigate the full compositional range of methylammonium lead bromide/iodide samples, MAPb(Br$_x$I$_{1-x}$)$_3$ with $x = 0\ldots 1$, by simultaneous in-situ X-ray diffraction and photoluminescence spectroscopy during illumination. The quantitative comparison of composition-dependent in-situ XRD and PL shows that at excitation densities of 1 sun, only the initial stage of photo-segregation can be rationalized with the previously established thermodynamic models. However, we observe a progression of the phase-segregation that can only be rationalized by considering long-lived accumulative photo-induced material alterations. We suggest that (additional) photo-induced defects, possibly halide vacancies and interstitials, need to be considered to fully rationalize light-induced phase-segregation and anticipate our findings to provide crucial insight for the development of more sophisticated models.
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Submitted 22 May, 2022;
originally announced May 2022.
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Broad Distribution of Local I/Br Ratio in Illuminated Mixed Halide Perovskite Films Revealed by Correlative X-ray Diffraction and Photoluminescence
Authors:
Klara Suchan,
Justus Just,
Pascal Becker,
Carolin Rehermann,
Aboma Merdasa,
Roland Mainz,
Ivan G. Scheblykin,
Eva L. Unger
Abstract:
Photo-induced phase-segregation in mixed halide perovskite MAPb(BrxI1-x)3 is investigated in the full compositional range by correlative X-ray diffraction and photo-luminescence experiments.
Photo-induced phase-segregation in mixed halide perovskite MAPb(BrxI1-x)3 is investigated in the full compositional range by correlative X-ray diffraction and photo-luminescence experiments.
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Submitted 3 January, 2021;
originally announced January 2021.
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Optical Fingerprints of Polynuclear Complexes in Lead-Halide Perovskite Precursor Solutions
Authors:
Ana M. Valencia,
Oleksandra Shargaieva,
Richard Schier,
Eva Unger,
Caterina Cocchi
Abstract:
Solvent-solute interactions in precursor solutions of lead halide perovskites (LHP) critically impact the quality of solution-processed materials, as they lead to the formation of a variety of poly-iodoplumbates that act as building blocks for LHP. The formation of [PbI$_{2+n}$]$^{n-}$ complexes is often expected in diluted solutions while coordination occurring at high concentrations is not well…
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Solvent-solute interactions in precursor solutions of lead halide perovskites (LHP) critically impact the quality of solution-processed materials, as they lead to the formation of a variety of poly-iodoplumbates that act as building blocks for LHP. The formation of [PbI$_{2+n}$]$^{n-}$ complexes is often expected in diluted solutions while coordination occurring at high concentrations is not well understood yet. In a combined \textit{ab initio} and experimental work, we demonstrate that the optical spectra of the quasi-one-dimensional iodoplumbate complexes PbI$_2$(DMSO)$_4$, Pb$_2$I$_4$(DMSO)$_6$, and Pb$_3$I$_6$(DMSO)$_8$ formed in dimethyl sulfoxide solutions are compatible with the spectral fingerprints measured at high concentrations of lead iodide. This finding suggests that the formation of polynuclear lead-halide complexes should be accounted for in the interpretation of optical spectra of LHP precursor solutions.
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Submitted 9 March, 2021; v1 submitted 15 December, 2020;
originally announced December 2020.
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Transient Analysis during Maximum Power Point Tracking (TrAMPPT) to Assess Dynamic Response of Perovskite Solar Cells
Authors:
Aniela Czudek,
Katrin Hirselandt,
Lukas Kegelmann,
Amran Al-Ashouri,
Marko Jošt,
Weiwei Zuo,
Antonio Abate,
Lars Korte,
Steve Albrecht,
Janardan Dagar,
Eva L. Unger
Abstract:
Determination of the device performance parameters of perovskite solar cells is far from trivial as transient effects may cause large discrepancies in current-voltage measurements as a function of scan rate and pre-conditioning. Maximum power point tracking, MPPT, enables to determine the steady-state maximum power conversion efficiency. However, the MPPT does not provide any information on the de…
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Determination of the device performance parameters of perovskite solar cells is far from trivial as transient effects may cause large discrepancies in current-voltage measurements as a function of scan rate and pre-conditioning. Maximum power point tracking, MPPT, enables to determine the steady-state maximum power conversion efficiency. However, the MPPT does not provide any information on the device performance parameters, which are reliable only if extracted from current-voltage curves collected under steady-state conditions. We show that is possible to determine the shorter settling or delay time suitable to carry out J-V measurements under steady-state conditions by analysis of the transient device response around the MPP. This procedure proves to be more time-efficient than measurement J-V measurements at a variety of scan rates. Furthermore, the generic algorithm presented here can be implemented to assess changes in the dynamic response of devices during long-term device ageing.
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Submitted 12 June, 2019;
originally announced June 2019.
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Silicon Nanowires, Catalytic Growth and Electrical Characterization
Authors:
Walter M. Weber,
Georg S. Duesberg,
Andrew P. Graham,
Maik Liebau,
Eugen Unger,
Caroline Cheze,
Lutz Geelhaar,
Paolo Lugli,
Henning Riechert,
Franz Kreupl
Abstract:
Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si substrates. For SiO2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field…
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Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si substrates. For SiO2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field effect transistors (FETs) were fabricated by implementing 10 to 30 nm thin nominally undoped Si-NWs as the active region. Various silicides were investigated as Schottky-barrier source and drain contacts for the active region. For CoSi, NiSi and PdSi contacts, the FETs transfer characteristics showed p-type behavior. A FET consisting of a single Si-NW with 20 nanometers diameter and 2.5 micrometer gate-length delivers as much as 0.15 microA on-current at 1 volt bias voltage and has an on/off current ratio of 10^7. This is in contrast to recent reports of low conductance in undoped Si.
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Submitted 13 September, 2006;
originally announced September 2006.
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Carbon Nanotubes for Interconnect Applications
Authors:
Franz Kreupl,
Andrew P. Graham,
Maik Liebau,
Georg S. Duesberg,
Robert Seidel,
Eugen Unger
Abstract:
We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node, a current density of 5 10^8 A/cm^2 and a resistance of 7.8…
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We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node, a current density of 5 10^8 A/cm^2 and a resistance of 7.8 kOhm could be achieved for a single multi-walled CNT vertical interconnect.
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Submitted 20 December, 2004;
originally announced December 2004.
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Sub 20 nm Short Channel Carbon Nanotube Transistors
Authors:
R. V. Seidel,
A. P. Graham,
J. Kretz,
B. Rajasekharan,
G. S. Duesberg,
M. Liebau,
E. Unger,
F. Kreupl,
W. Hoenlein
Abstract:
Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degree Celsius form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene and P…
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Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degree Celsius form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 microA for drain-source biases of only 0.4 Volt.
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Submitted 7 November, 2004;
originally announced November 2004.
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Microelectronic interconnects based on carbon nanotubes
Authors:
Franz Kreupl,
Andrew P. Graham,
Maik Liebau,
Georg S. Duesberg,
Robert Seidel,
Eugen Unger
Abstract:
Carbon nanotubes have emerged as a possible new material for electronic applications. They show promising characteristics for transistors as well as for interconnects. Here we review their basic properties and focus on the status of nanotubes with respect to their application as interconnects and discuss the challenges facing their integration.
Carbon nanotubes have emerged as a possible new material for electronic applications. They show promising characteristics for transistors as well as for interconnects. Here we review their basic properties and focus on the status of nanotubes with respect to their application as interconnects and discuss the challenges facing their integration.
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Submitted 25 October, 2004;
originally announced October 2004.
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Carbon Nanotubes in Microelectronic Applications
Authors:
F. Kreupl,
G. S. Duesberg,
A. P. Graham,
M. Liebau,
E. Unger,
R. Seidel,
W. Pamler,
W. Hoenlein
Abstract:
Carbon nanotubes with their outstanding electrical and mechanical properties are suggested as interconnect material of the future and as switching devices, which could outperform silicon devices. In this paper we will introduce nanotubes, specify the applications, where nanotubes can contribute to the advancement of Moore's law and show our progress of nanotube process integration in a microelec…
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Carbon nanotubes with their outstanding electrical and mechanical properties are suggested as interconnect material of the future and as switching devices, which could outperform silicon devices. In this paper we will introduce nanotubes, specify the applications, where nanotubes can contribute to the advancement of Moore's law and show our progress of nanotube process integration in a microelectronic compatible way. The growth of single individual nanotubes at lithographically defined locations on whole wafers as a key requirement for the successful implementation of nanotubes is shown. In terms of nanotube transistors we propose a vertical nanotube transistor concept which outperforms the ITRS requirements for the year 2016. The performance is mainly limited by contact resistances, but by comparison with silicon devices we show that fabricated nanotube transistors already today exceed the values for transconductance, on-resistance and drive current of silicon devices.
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Submitted 14 October, 2004;
originally announced October 2004.
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Bias Dependence and Electrical Breakdown of Small Diameter Single-Walled Carbon Nanotubes
Authors:
R. V. Seidel,
A. P. Graham,
B. Rajasekharan,
E. Unger,
M. Liebau,
G. S. Duesberg,
F. Kreupl,
W. Hoenlein
Abstract:
The electronic breakdown and the bias dependence of the conductance have been investigated for a large number of catalytic chemical vapor deposition (CCVD) grown single-walled carbon nanotubes (SWCNTs) with very small diameters. The convenient fabrication of thousands of properly contacted SWCNTs was possible by growth on electrode structures and subsequent electroless palladium deposition. Almo…
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The electronic breakdown and the bias dependence of the conductance have been investigated for a large number of catalytic chemical vapor deposition (CCVD) grown single-walled carbon nanotubes (SWCNTs) with very small diameters. The convenient fabrication of thousands of properly contacted SWCNTs was possible by growth on electrode structures and subsequent electroless palladium deposition. Almost all of the measured SWCNTs showed at least weak gate dependence at room temperature. Large differences in the conductance and breakdown behavior have been found for "normal" semiconducting SWCNTs and small band-gap semiconducting (SGS) SWCNTs.
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Submitted 13 October, 2004;
originally announced October 2004.
