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Diamond-shaped evolution of the superconducting interference pattern in NbTiN weak-link Josephson junctions
Authors:
Kui Zhao,
Huaiyuan Liu,
Jianfei Xiao,
Linfeng Tu,
Jiangbo He,
Mingli Liu,
Ruiyang Jiang,
Zhongmou Jia,
Shang Zhu,
Yunteng Shi,
Yiwen Ma,
Zhaozheng Lyu,
Jie Shen,
Guangtong Liu,
Li Lu,
Fanming Qu
Abstract:
Introducing an in-plane magnetic field into Josephson junctions is of fundamental significance in exploring a variety of interesting physical phenomena. However, extra care must be paid in realistic experiments involving an in-plane magnetic field, because trivial orbital effect due to, e.g., rippled structures can inevitably be introduced, which could produce false effect confusing the expected p…
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Introducing an in-plane magnetic field into Josephson junctions is of fundamental significance in exploring a variety of interesting physical phenomena. However, extra care must be paid in realistic experiments involving an in-plane magnetic field, because trivial orbital effect due to, e.g., rippled structures can inevitably be introduced, which could produce false effect confusing the expected physical phenomena. In this work, we report a diamond-shaped evolution of the critical supercurrent in an in-plane magnetic field in NbTiN weak-link Josephson junctions. Upon application of an in-plane magnetic field perpendicular to the current, the superconducting interference pattern exhibits a characteristic evolution, which manifests as a diamond block diagram featured with each node opened and stretched out in a V-shape, mimicking the suppression-recovery patterns of critical supercurrent related to the Zeeman-driven 0-pi transition. However, the effect of Zeeman splitting plays a negligible role due to the relatively small magnetic field involved in our experiment. Therefore, we explore the trivial orbital effect of rippled structures and further take into account non-uniform current distributions pertaining in our junctions. We find that the ripples in combination with specific current distributions can give rise to a similar evolution pattern as the experimental observations. Our results serve as a caution that the combined effect of rippled structures and non-homogeneous current distributions should be taken seriously for experiments subjected by in-plane magnetic fields.
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Submitted 10 March, 2023;
originally announced March 2023.
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Magnetic field filtering of the hinge supercurrent in unconventional metal NiTe$_2$-based Josephson junctions
Authors:
Tian Le,
Ruihan Zhang,
Changcun Li,
Ruiyang Jiang,
Haohao Sheng,
Linfeng Tu,
Xuewei Cao,
Zhaozheng Lyu,
Jie Shen,
Guangtong Liu,
Fucai Liu,
Zhijun Wang,
Li Lu,
Fanming Qu
Abstract:
Topological materials with boundary (surface/edge/hinge) states have attracted tremendous research interest. Besides, unconventional (obstructed atomic) materials have recently drawn lots of attention owing to their obstructed boundary states. Experimentally, Josephson junctions (JJs) constructed on materials with boundary states produce the peculiar boundary supercurrent, which was utilized as a…
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Topological materials with boundary (surface/edge/hinge) states have attracted tremendous research interest. Besides, unconventional (obstructed atomic) materials have recently drawn lots of attention owing to their obstructed boundary states. Experimentally, Josephson junctions (JJs) constructed on materials with boundary states produce the peculiar boundary supercurrent, which was utilized as a powerful diagnostic approach. Here, we report the observations of conspicuous hinge supercurrent in NiTe$_2$-based JJs. Particularly, applying an in-plane magnetic field along the Josephson current could rapidly suppress the bulk supercurrent and retain the nearly pure hinge supercurrent, namely the magnetic field filtering of supercurrent. Further systematic comparative analysis and theoretical calculations demonstrate the existence of unconventional nature and obstructed hinge states in NiTe$_2$. Our results revealed the unique hinge states in unconventional metal NiTe$_2$, and demonstrated in-plane magnetic field as an efficient method to filter out the futile bulk contributions and thereby to highlight the hinge states hidden in topological/unconventional materials.
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Submitted 9 March, 2023;
originally announced March 2023.
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Inverse-current quantum electro-oscillations in a charge-density wave insulator
Authors:
Tian Le,
Ruiyang Jiang,
Linfeng Tu,
Renji Bian,
Yiwen Ma,
Yunteng Shi,
Ke Jia,
Zhilin Li,
Zhaozheng Lyu,
Xuewei Cao,
Jie Shen,
Guangtong Liu,
Youguo Shi,
Fucai Liu,
Yi Zhou,
Li Lu,
Fanming Qu
Abstract:
Quantum magneto-oscillations have long been a vital subject in condensed matter physics, with ubiquitous quantum phenomena and diverse underlying physical mechanisms. Here, we demonstrate the intrinsic and reproducible DC-current-driven quantum electro-oscillations with a periodicity in the inverse of the current (1/I), in quasi-one-dimensional charge-density-wave (CDW) insulators (TaSe$_4$)$_2$I…
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Quantum magneto-oscillations have long been a vital subject in condensed matter physics, with ubiquitous quantum phenomena and diverse underlying physical mechanisms. Here, we demonstrate the intrinsic and reproducible DC-current-driven quantum electro-oscillations with a periodicity in the inverse of the current (1/I), in quasi-one-dimensional charge-density-wave (CDW) insulators (TaSe$_4$)$_2$I and TaS$_3$ nanowires. Such oscillations manifest in the nearly infinite Fröhlich conductivity region where the undamped CDW flow forms in a finite electric current, and finally disappear after the oscillation index n reaches 1. A systematic investigation on the effect of temperature and magnetic field establishes that the observed electro-oscillations are a coherent quantum phenomenon. We discuss the possibilities of the physical mechanisms, including the formation of sliding-driven inherent Floquet sidebands. Our results introduce a new member in the family of quantum oscillations, and shed light on plausible avenues to explore novel physics and potential applications of coherent density-wave condensates.
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Submitted 19 June, 2024; v1 submitted 16 February, 2023;
originally announced February 2023.
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Coherent Atomically-Thin Superlattices with Engineered Strain
Authors:
Saien Xie,
Lijie Tu,
Yimo Han,
Lujie Huang,
Kibum Kang,
Ka Un Lao,
Preeti Poddar,
David A. Muller,
Robert A. DiStasio Jr,
Jiwoong Park
Abstract:
Epitaxy forms the basis of modern electronics and optoelectronics. We report coherent atomically-thin superlattices, in which different transition metal dichalcogenide monolayers--despite large lattice mismatches--are repeated and integrated without dislocations. Grown by a novel omnidirectional epitaxy, these superlattices display fully-matched lattice constants across heterointerfaces while main…
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Epitaxy forms the basis of modern electronics and optoelectronics. We report coherent atomically-thin superlattices, in which different transition metal dichalcogenide monolayers--despite large lattice mismatches--are repeated and integrated without dislocations. Grown by a novel omnidirectional epitaxy, these superlattices display fully-matched lattice constants across heterointerfaces while maintaining a surprisingly isotropic lattice structure and triangular symmetry. This strong epitaxial strain is precisely engineered via the nanoscale supercell dimensions, thereby enabling broad tuning of the optical properties and producing photoluminescence peak shifts as large as 250 meV. We present theoretical models to explain this coherent growth as well as the energetic interplay governing the flat-rippled configuration space in these strained monolayers. Such coherent superlattices provide novel building blocks with targeted functionalities at the atomically-thin monolayer limit.
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Submitted 30 August, 2017;
originally announced August 2017.
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Characterizations of strain and defect free GaN nanorods on Si(111) substrates
Authors:
H. W. Seo,
Q. Y. Chen,
M. N. Iliev,
W. K. Chu,
L. W. Tu,
C. L. Hsiao,
James K. Meen
Abstract:
GaN-nanorods grown on Si(111) substrates are found strain- and defect-free as characterized by micro Raman spectroscopy, secondary electron (SE) and cathode-luminescence (CL) imaging. The matrix supporting the nanorods bears the brunt of all strains, strain-relaxations, and defect generations, giving the nanorods an ideal environment to grow to perfection. Photo-excitations by the Raman laser so…
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GaN-nanorods grown on Si(111) substrates are found strain- and defect-free as characterized by micro Raman spectroscopy, secondary electron (SE) and cathode-luminescence (CL) imaging. The matrix supporting the nanorods bears the brunt of all strains, strain-relaxations, and defect generations, giving the nanorods an ideal environment to grow to perfection. Photo-excitations by the Raman laser source and electron irradiation during CL imaging lead to an increase of non-equilibrium electrons, suggesting an effective approach to photo-emitting or field emitting device applications. The nanorods, largely isolated from but perfectly aligned with the sustaining matrix, are grown in excellent epitaxy with the Si substrates.
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Submitted 8 March, 2005;
originally announced March 2005.
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Epitaxial GaN Nanorods via Catalytic Capillary Condensation
Authors:
H. W. Seo,
Q. Y. Chen,
L. W. Tu,
C. L. Hsiao,
M. N. Iliev,
W. K. Chu
Abstract:
Intrinsic catalytic process by capillary condensation of Ga-atoms into nanotrenches, formed among im**ing islands during the wurzite-GaN thin film deposition, is shown to be an effective path to growing GaN nanorods without metal catalysts. The nano-capillary brings within it a huge imbalance in equilibrium partial pressure of Ga relative to the growth ambient. GaN nanorods thus always grow ou…
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Intrinsic catalytic process by capillary condensation of Ga-atoms into nanotrenches, formed among im**ing islands during the wurzite-GaN thin film deposition, is shown to be an effective path to growing GaN nanorods without metal catalysts. The nano-capillary brings within it a huge imbalance in equilibrium partial pressure of Ga relative to the growth ambient. GaN nanorods thus always grow out of a holding nanotrench and conform to the boundaries of surrounding islands. The nanorods are epitaxially orientated with <0001>GaN // <111>Si and <2110>GaN // <110>Si similar to the matrix. Concaved geometry is essential and is a condition that limits the axial dimension of the nanorods protruding above the base (matrix) material region. Revelation of the growth mechanism in the current context suggests that fabrication of nano quantum structures with controlled patterns is enabling for any attainable dimensions
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Submitted 8 March, 2005;
originally announced March 2005.
